CN111192966B - Perovskite solar cell and preparation method thereof - Google Patents
Perovskite solar cell and preparation method thereof Download PDFInfo
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Abstract
The application provides a perovskite solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The perovskite solar cell comprises a perovskite layer and a hole transport layer which are sequentially laminated, wherein the hole transport material of the hole transport layer is fluorinated polythiophene, the structure of the fluorinated polythiophene is shown as a formula I, and R groups in the formula I are selected from any one of methyl, ethyl and 2-ethylhexyl. The preparation method of the perovskite solar cell comprises the following steps: and preparing the hole transport layer by spin coating on the surface of the perovskite layer by using spin coating liquid of the hole transport material. The cost of the hole transport layer can be effectively reduced, and meanwhile, the perovskite solar cell can be guaranteed to have good stability.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to a perovskite solar cell and a preparation method thereof.
Background
The hole transport layer plays a very important role in the perovskite solar cell, and the optical and electrical properties and the stability of the hole transport layer can directly influence the photoelectric conversion efficiency and the stability of the perovskite solar cell. At present, 2', 7' -tetra [ N, N-di (4-methoxyphenyl) -amino ] -9,9' -spirobifluorene (Spiro-OMeTAD) is taken as a hole transport layer material with excellent performance, the application range is the most extensive, but the industrialization application of the hole transport layer material is seriously influenced by the high price. In order to reduce the cost, the novel material 3-hexylthiophene polymer (P3 HT) has a more suitable energy level compared with perovskite, can well collect holes, is a more ideal novel hole transport layer material, but the perovskite battery taking P3HT as the hole transport layer has the problem of poor stability. Therefore, it is necessary to provide a technical solution that effectively reduces the cost of the hole transport layer and can maintain the perovskite solar cell with better stability.
Disclosure of Invention
The perovskite solar cell and the preparation method thereof can effectively reduce the cost of the hole transport layer and can ensure that the perovskite solar cell has better stability.
Embodiments of the present application are implemented as follows:
in a first aspect, an embodiment of the present application provides a perovskite solar cell, including a perovskite layer and a hole transport layer that are sequentially stacked, a hole transport material of the hole transport layer is fluorinated polythiophene, and a structure of the fluorinated polythiophene is shown in formula I:
wherein R is selected from any one of methyl, ethyl and 2-ethylhexyl.
In a second aspect, an embodiment of the present application provides a method for preparing a perovskite solar cell provided in the embodiment of the first aspect, including: and preparing the hole transport layer by spin coating on the surface of the perovskite layer by using spin coating liquid of the hole transport material.
The inventor researches find that the sensitivity of the perovskite layer to water vapor can cause the hydrolysis of perovskite, which is a main reason for the poor stability of the perovskite solar cell. In the technical scheme, the fluorinated polythiophene shown in the formula I is adopted as the hole transport material, so that the synthesis is convenient, and the material cost is low. The fluorinated polythiophene in the formula has the same energy level as thiophene, has a proper energy level as a hole transport material and a perovskite phase in a perovskite layer, and can well collect holes. The fluorine element in the fluorinated polythiophene ensures that the fluorinated polythiophene has certain hydrophobicity, the fluorinated modification degree in the structure is proper, the water vapor can be well isolated under the condition of not sacrificing the battery efficiency, a hydrophobic film layer is provided for the perovskite layer, and the hydrolysis of the perovskite can be effectively delayed, so that the stability of the perovskite solar cell is improved. The hole transport layer prepared by using the hole transport material is matched with the perovskite layer, so that the cost of the material of the hole transport layer can be effectively reduced, and meanwhile, the perovskite solar cell can be ensured to have better stability.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a perovskite solar cell according to an embodiment of the present disclosure;
FIG. 2 is an IV curve of a perovskite solar cell provided in example 1 of the present application;
fig. 3 is a graph showing the change in the cell efficiency of the perovskite solar cell provided in example 1 and comparative example 2 of the present application with the storage time.
Icon: a 100-perovskite solar cell; 110-a conductive glass layer; 120-an electron transport layer; 130-perovskite layer; 140-a hole transport layer; 150-electrode layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
In this application, "and/or" such as "scheme a and/or scheme B" means that the solution may be separately scheme a, separately scheme B, and scheme a plus scheme B.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
The perovskite solar cell 100 and the method of manufacturing the same according to the embodiment of the present application are specifically described below.
In a first aspect, referring to fig. 1, an embodiment of the present application provides a perovskite solar cell 100, which includes a perovskite layer 130 and a hole transport layer 140, wherein a hole transport material of the hole transport layer 140 is a fluorinated polythiophene, and a structure of the fluorinated polythiophene is shown in formula I:
wherein R is selected from any one of methyl, ethyl and 2-ethylhexyl.
The fluorinated polythiophene shown in the formula I is convenient to synthesize and relatively low in cost, and can be used as a material of the hole transport layer 140 to effectively reduce the cost of the hole transport layer 140. The fluorinated polythiophene in the formula has the same energy level as thiophene, has a proper energy level as a hole transport material with a perovskite phase in the perovskite layer 130, and can well collect holes. The fluorine element in the fluorinated polythiophene makes the fluorinated polythiophene have certain hydrophobicity, the fluorinated modification degree in the structure is proper, the water vapor can be well isolated under the condition of not sacrificing the battery efficiency, a hydrophobic film layer is provided for the perovskite layer 130, and the hydrolysis of perovskite can be effectively delayed, so that the stability of the perovskite solar cell 100 is improved.
It is understood that in the embodiments of the present application, the perovskite solar cell 100 may be provided with various functional layers of a base structure, an active structure, an electrode structure, and the like, as needed. With continued reference to fig. 1, the exemplary perovskite solar cell 100 includes a conductive glass layer 110, an electron transport layer 120, a perovskite layer 130, a hole transport layer 140, and an electrode layer 150, which are stacked in this order.
With respect to the conductive glass layer 110, in some possible embodiments, the conductive glass layer 110 is selected from one of FTO conductive glass and ITO conductive glass. For example, the conductive glass layer 110 is FTO conductive glass, which is low cost and stable in performance.
Regarding the electron transport layer 120, in some possible embodiments, the electron transport layer 120 is any one of a tin dioxide layer, a titanium dioxide layer, a nickel oxide layer, a C60 (football) layer, or a PCBM (fullerene derivative of the formula [6,6] -phenyl-C61-butyl-methyl ester)/BCP (block copolymer) bilayer membrane structure, for example, the electron transport layer 120 is a tin dioxide layer or a titanium dioxide layer. In the embodiment where the electron transport layer 120 is a titanium dioxide layer, the titanium dioxide layer includes a dense titanium dioxide layer and a mesoporous titanium dioxide layer that are sequentially stacked, and the dense titanium dioxide layer is located on a side of the mesoporous titanium dioxide layer near the conductive glass layer 110.
Illustratively, the electron transport layer 120 has a thickness in the range of 10-30nm, such as, but not limited to, any one or between any two of 10nm, 15nm, 20nm, 25nm, 30 nm.
Regarding the perovskite layer 130, in some possible embodiments, one or at least two perovskite materials ABX are included in the perovskite layer 130 3 . In perovskite material ABX 3 Wherein A is a methylamine group and/or a formamidine group; b is selected from one of Pb ions and Sn ions, for example, B is Pb ions, and has better stability under the condition of using the Pb ions; x is selected from at least one of I ion, cl ion and Br ion, for example X is I ion and Br ion.
Illustratively, the perovskite layer 130 has a thickness in the range of 400-600nm, such as, but not limited to, any one or between any two of 400nm, 425nm, 450nm, 475nm, 500nm, 525nm, 550nm, 575nm, 600 nm.
With respect to hole transport layer 140, in some possible embodiments, the R group is 2-ethylhexyl.
Illustratively, the hole transport layer 140 has a thickness in the range of 10-50nm, such as, but not limited to, any one or between any two of 10nm, 20nm, 30nm, 40nm, 50nm.
With respect to the electrode layer 150, in some possible embodiments, the electrode layer 150 is selected from one of a gold electrode and a silver electrode, for example, the electrode layer 150 is a gold electrode.
The thickness of the electrode layer 150 is illustratively 70-90nm, such as, but not limited to, a range between any one or any two of 70nm, 75nm, 80nm, 85nm, 90nm.
In a second aspect, embodiments of the present application provide a method for manufacturing a perovskite solar cell 100 provided in the embodiment of the first aspect, including: the hole transport layer 140 is prepared by spin coating on the surface of the perovskite layer 130 using a spin coating solution of a hole transport material.
Illustratively, in embodiments in which the perovskite solar cell 100 includes the conductive glass layer 110, the electron transport layer 120, the perovskite layer 130, the hole transport layer 140, and the electrode layer 150, which are sequentially stacked, the fabrication method further includes: an electron transport layer 120 is prepared by spin coating on the surface of the conductive glass layer 110, then a perovskite layer 130 is prepared by spin coating on the surface of the electron transport layer 120, and after the spin coating to prepare a hole transport layer 140 is completed, an electrode layer 150 is evaporated on the surface of the hole transport layer 140.
Regarding the preparation of the electron transport layer 120, in some possible embodiments, a solution containing an electron transport material is spin-coated on the surface of the conductive glass layer 110, and a heating process is performed after the spin-coating is completed.
As an example, a tin dioxide layer is prepared on the surface of FTO conductive glass. Illustratively, the tin dioxide hydrocolloid solution is mixed with deionized water in a volume ratio of 1:2.5-3.5, for example in a volume ratio of 1:3, to provide a diluted tin dioxide solution. Placing the washed FTO conductive glass on a spin coater, and uniformly spin-coating the diluted tin dioxide solution on the surface of the FTO conductive glass. In spin coating operations, spin coating speeds of 2500-3500rpm, for example 3000rpm; the spin-coating time is 15-25s, for example 20s. After spin coating is completed, placing the substrate on a heating table for heating treatment, wherein the heating temperature is 170-190 ℃, for example 180 ℃; the heating time is 25-35min, for example 30min. The prepared tin dioxide layer has good film forming effect, the thickness is effectively controlled within 10-30nm, and the electron transport layer 120 has good electron transport efficiency.
As another example, a titanium dioxide layer is prepared on the surface of the ITO conductive glass. Illustratively, a dense titanium dioxide layer is first prepared: the surface of the ITO conductive glass is uniformly spin-coated with an allyl alcohol solution of titanium dioxide with a volume percentage concentration of 70-80%, wherein the titanium dioxide in the allyl alcohol solution containing titanium dioxide is 75%, for example. In spin coating operation, spin coating speed is 1500-2500rpm, such as 2000rpm; the spin-coating time is 35-45s, for example 40s. Heating treatment is carried out after spin coating is finished, wherein the heating temperature is 480-520 ℃, for example, 500 ℃; the heating time is 25-35min, for example 30min. And then preparing a mesoporous titanium dioxide layer: uniformly spin-coating a titanium dioxide diluted solution obtained by mixing titanium dioxide and ethanol according to the volume ratio of 1:3-4 on the surface of the compact titanium dioxide layer, wherein the titanium dioxide diluted solution is diluted according to the volume ratio of 1:3.5. In spin coating operation, spin coating speed is 3000-4000rpm, for example 3500rpm; the spin-coating time is 25-35s, for example 30s. Heating treatment is carried out after spin coating is finished, wherein the heating temperature is 480-520 ℃, for example, 500 ℃; the heating time is 25-35min, for example 30min. The prepared titanium dioxide layer has good film forming effect, the thickness is effectively controlled within 10-30nm, and the electron transport layer 120 has good electron transport efficiency.
Regarding the preparation of perovskite layer 130, in some possible embodiments ABX may be provided 3 The A group, B ion and C ion raw materials are mixed and prepared into perovskite precursor solution, then the perovskite precursor solution is spin-coated, extraction is carried out by chlorobenzene after spin-coating is carried out for a certain time, and heating treatment is carried out after spin-coating is finished.
Illustratively, pbI is prepared 2 、PbBr 2 MABr (methyl amine bromide) and FAI (formamidine iodine), then DMSO (dimethyl sulfoxide) and DMF (dimethylformamide) are added, and ultrasonic stirring is carried out to obtain perovskite precursor solution. In the operation of spin-coating perovskite precursor solutionSpin-coating speeds of 2500-3500rpm, for example 3000rpm; after spin-coating for 25-30s, for example 28s, extraction with chlorobenzene is carried out. Heating operation is carried out after spin coating is completed, wherein the heating temperature is 140-160 ℃, for example 150 ℃; the heating time is 25-35min, for example 30min. The perovskite layer 130 prepared by the method has good film forming effect, can effectively control the thickness within 400-600nm, and has good light absorption efficiency.
In other possible embodiments, ABX may be provided 3 Raw materials of B ions and X ions in the solution are mixed and prepared into a first spin coating solution, and ABX is provided 3 The raw materials of the group A are prepared into a second spin coating liquid, the first spin coating liquid is adopted to carry out first spin coating, the first heating treatment is carried out after the spin coating is finished, then the second spin coating liquid is adopted to carry out second spin coating, and the second heating treatment is carried out after the spin coating is finished.
Illustratively, pbI is prepared 2 PbBr 2 Then adding DMSO and DMF, and stirring by ultrasonic to obtain a first spin-coating solution; MABr and FAI were prepared and dissolved in isopropanol to give a second spin-on solution. The spin-coating speed of the first spin-coating is 1500-2500rpm, for example 2000rpm; the spin-coating time is 25-35s, for example 30s. Carrying out first heating treatment after spin coating, wherein the heating temperature is 70-80 ℃, for example 75 ℃; the heating time is 8-12s, for example 10s.
The spin-coating speed of the second spin-coating is 1500-2000rpm, for example 1700rpm; the spin-coating time is 25-35s, for example 30s. Carrying out a second heating treatment after spin coating, wherein the heating temperature is 170-190 ℃, for example 180 ℃; the heating time is 18-22min, for example 20min. The perovskite layer 130 prepared by the method has good film forming effect, can effectively ensure that the thickness is between 400 and 600nm, and has better light absorption efficiency.
Regarding the preparation of the hole transport layer 140, in some possible embodiments, a spin-on solution of the hole transport material is prepared by: the fluorinated polythiophene was formulated into a chlorobenzene solution containing the fluorinated polythiophene, and then the chlorobenzene solution containing the fluorinated polythiophene was mixed with an acetonitrile solution of Li-TFSI (lithium bistrifluoromethane sulfonimide) and 4-t-BP (4-t-butylphenol).
In the process of preparing the fluorinated polythiophene into the chlorobenzene solution containing the fluorinated polythiophene, the fluorinated polythiophene is dissolved for 8-12min by ultrasonic, for example, 10min by ultrasonic, so that the fluorinated polythiophene is ensured to be fully dissolved. Illustratively, the concentration of the fluorinated polythiophene in the chlorobenzene solution containing the fluorinated polythiophene is in the range of 5-30mg/mL, or 10-25mg/mL, or 10-20mg/mL, such as, but not limited to, any one or between any two of 5mg/mL, 8mg/mL, 10mg/mL, 12mg/mL, 15mg/mL, 18mg/mL, 20mg/mL, 22mg/mL, 25mg/mL, 28mg/mL, 30mg/mL. The chlorobenzene solution containing the fluorinated polythiophene is prepared according to the concentration, and the fluorinated polythiophene has proper concentration, so that the hole transport layer 140 has better hole transport efficiency.
Optionally, the volume ratio of the chlorobenzene solution containing the fluorinated polythiophene to the acetonitrile solution containing the Li-TFSI to the 4-t-BP is 1000:4-6:13-17, and the spin-coating solution of the hole transport material is prepared according to the proportion, so that the doping effect is better.
Further, spin coating is performed using the spin coating liquid of the hole transport material described above, and the spin coating rotational speed is 2500 to 4000rpm, or 2500 to 3500rpm, for example, but not limited to, any one or any two of 2500rpm, 2800rpm, 3000rpm, 3200rpm, 3500rpm, 3800rpm, 4000rpm during the spin coating. The spin-coating time is 20-40s, or 25-35s, such as, but not limited to, a range between any one or any two of 20s, 22s, 25s, 28s, 30s, 32s, 35s, 38s, 40s. The spin coating is performed according to the standard, so that the spin coating effect is good, the film forming effect of the obtained hole transport layer 140 is good, the thickness is effectively controlled to be 10-50nm, and the hole transport layer 140 is guaranteed to have good hole transport efficiency.
The inventors have found that, in the embodiments of the present application, the concentration of the fluorinated polythiophene, the spin speed, and the spin time have a large influence on the performance of the hole transport layer 140 when the hole transport layer 140 is prepared, and that a lower than the above range or a higher than the above range may result in a decrease in the hole transport efficiency of the hole transport layer 140.
The features and capabilities of the present application are described in further detail below in connection with the examples.
Example 1
A perovskite solar cell 100, the method of making which comprises:
s1, cleaning FTO conductive glass for standby.
S2, preparing a tin dioxide layer on the surface of the conductive glass layer 110 by spin coating:
50ml of tin dioxide hydrocolloid solution was mixed with deionized water according to 1:3, and obtaining diluted tin dioxide solution. The diluted tin dioxide solution is uniformly spin-coated on the surface of the FTO conductive glass at a rotating speed of 3000rpm for 20s, and then is placed on a heating table for annealing treatment at a temperature of 180 ℃ for 30min.
S3, preparing a perovskite layer 130 by spin coating on the surface of the electron transport layer 120:
459mg of PbI was weighed out 2 76mg of PbBr 2 24.68mg of MABr and 208mg of FAI, 200. Mu.L of DMSO and 800. Mu.L of DMF were then added and stirred ultrasonically for 10min to give a perovskite precursor solution. The perovskite precursor solution was added dropwise to the surface of the tin dioxide layer, spin coating was started at 3000rpm, and 500. Mu.L of chlorobenzene was used for extraction at 28s of spin coating. After spin coating, the substrate was heated at 150℃for 30min.
S4, preparing a hole transport layer 140 on the perovskite surface by spin coating:
dissolving the fluorinated polythiophene shown in the formula I in chlorobenzene for 10min by ultrasonic dissolution, and preparing to obtain a chlorobenzene solution containing the fluorinated polythiophene, wherein R groups in the formula I are 2-ethylhexyl, and the concentration of the fluorinated polythiophene in the solution is 15mg/mL. To 1mL of a chlorobenzene solution containing fluorinated polythiophene, 5. Mu.L of Li-TFSI acetonitrile solution and 15.2. Mu.L of 4-t-BP were added, and after stirring, the mixture was spin-coated on the perovskite layer 130 at 3000rpm for 30s.
S5, evaporating a gold electrode with the thickness of 80nm on the surface of the hole transport layer 140.
Example 2
The perovskite solar cell 100, the preparation method of which differs from example 1 only in the steps S1 and S2, in particular:
s1, cleaning ITO conductive glass for standby.
S2, preparing a titanium dioxide layer on the surface of the conductive glass layer 110 by spin coating:
first, dense TiO is prepared 2 Layer (c): an allyl alcohol solution with a volume concentration of 75% titanium dioxide was used to spin-coat for 40 seconds at 2000rpm, and after spin-coating was completed, the solution was heated at 500℃for 30 minutes.
And then preparing a mesoporous titanium dioxide layer: titanium oxide and ethanol were used according to 1:3.5, spin-coating the obtained titanium dioxide diluted solution at 3500rpm for 30s, and heating at 500 ℃ for 30min after spin-coating.
Example 3
The perovskite solar cell 100, the preparation method of which differs from that of example 1 only in the S3 step, specifically:
459mg of PbI was weighed out 2 And 76mg of PbBr 2 Then 200. Mu.L of DMSO and 800. Mu.L of DMF were added and stirred ultrasonically for 10min to give a first spin solution. 166mg of FAI and 66mg of FABr were weighed and dissolved in 1ml of isopropyl alcohol to obtain a second spin solution. The first spin coating solution was spin coated at 2000rpm for 30 seconds and heated at 75℃for 10 seconds after spin coating was completed. The second spin coating solution was spin coated at 1700rpm for 30 seconds, and heated at 180℃for 20 minutes after the spin coating was completed.
Example 4
The perovskite solar cell 100 is different from example 1 only in the preparation method: in the step S4, the used fluorinated polythiophene is shown as a formula I, wherein R groups in the formula I are methyl groups.
Example 5
The perovskite solar cell 100 is different from example 1 only in the preparation method: in the step S4, the used fluorinated polythiophene is shown as a formula I, wherein R groups in the formula I are ethyl groups.
Example 6
The perovskite solar cell 100 is different from example 1 only in the preparation method: in the S4 step, in the chlorobenzene solution containing the fluorinated polythiophene, the concentration of the fluorinated polythiophene is 5mg/mL. To 1mL of a chlorobenzene solution containing fluorinated polythiophene was added 4. Mu.L of Li-TFSI acetonitrile solution and 13. Mu.L of 4-t-BP. Spin coating was carried out at 2500rpm for 25s.
Example 7
The perovskite solar cell 100 is different from example 1 only in the preparation method: in the S4 step, the concentration of the fluorinated polythiophene in the chlorobenzene solution containing the fluorinated polythiophene is 25mg/mL. To 1mL of a chlorobenzene solution containing fluorinated polythiophene was added 6. Mu.L of Li-TFSI acetonitrile solution and 17. Mu.L of 4-t-BP. The spin-coating speed was 2500rpm and the spin-coating time was 35s.
Comparative example 1
The perovskite solar cell 100, the preparation method of which differs from that of example 1 only in the S4 step, specifically:
56mg of Spiro-OMeTAD, 6mg of Li-TFSI and 30mg of 4-t-BP are added into 1mL of chlorobenzene, and the mixture is ultrasonically dissolved for 10min to prepare a chlorobenzene solution of Spiro-OMeTAD. The Spiro-OMeTAD layer was prepared by spin coating a solution of Spiro-OMeTAD in chlorobenzene onto the perovskite layer 130 at 2500rpm for 20s.
Comparative example 2
The perovskite solar cell 100, the preparation method of which differs from that of example 1 only in the S4 step, specifically:
p3HT solution was prepared at a concentration of 15mg/mL and sonicated for 10min. To 1mL of the P3HT solution, 5. Mu.L of Li-TFSI acetonitrile solution and 15.2. Mu.L of 4-t-BP were added, and the mixture was spin-coated onto the perovskite layer 130 after stirring. The spin-coating speed was 3000rpm and the spin-coating time was 30s.
Test examples
The solar cells provided in the examples and comparative examples of the present application were tested for performance according to 1 standard of steady state light source test under standard sunlight.
The performance of the perovskite solar cell 100 provided in example 1 of the present application was tested, and an IV curve showing the relationship between the output current and the output voltage under the forward scanning condition and the reverse scanning condition is shown in fig. 2.
The performance of perovskite solar cell 100 provided in examples 1 to 3 and comparative examples 1 to 2 of the present application was examined, and the IV data results are shown in table 1.
TABLE 1 IV data for perovskite solar cell 100
| Jsc(mA/cm 2 ) | Voc(V) | FF(％) | Eff(％) | |
| Example 1 | 23.33 | 1.084 | 71.95 | 18.19 |
| Example 2 | 22.89 | 1.095 | 71.83 | 18.00 |
| Example 3 | 23.09 | 1.17 | 70.98 | 19.17 |
| Comparative example 1 | 23.21 | 1.19 | 72.77 | 20.09 |
| Comparative example 2 | 22.91 | 1.096 | 72.03 | 18.08 |
The stability of the perovskite solar cell 100 provided in example 1 and comparative example 2 of the present application was examined, and the results are shown in fig. 3.
As can be seen from fig. 2-3 and table 1, the perovskite solar cell 100 provided in the embodiment 1 adopts the fluorinated polythiophene shown in the formula I as the hole transporting material of the hole transporting layer 140, and has a comparable working efficiency while effectively reducing the cost compared with the comparative example 1 which adopts the spira-ome tad as the hole transporting layer 140; the stability was significantly improved as compared to comparative example 2, which uses P3HT as the hole transport layer 140.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (14)
1. The perovskite solar cell is characterized by comprising a perovskite layer and a hole transport layer which are sequentially stacked, wherein the hole transport material of the hole transport layer is fluorinated polythiophene, and the structure of the fluorinated polythiophene is shown as a formula I:
wherein R is selected from any one of methyl, ethyl and 2-ethylhexyl, and n is the number of repetitions of the polymer backbone unit.
2. The perovskite solar cell according to claim 1, wherein the perovskite layer has a thickness of 400-600nm and/or the hole transport layer has a thickness of 10-50nm.
3. The perovskite solar cell according to claim 1 or 2, wherein the perovskite solar cell comprises a conductive glass layer, an electron transport layer, the perovskite layer, the hole transport layer, and an electrode layer, which are stacked in this order.
4. A perovskite solar cell according to claim 3, wherein the thickness of the electron transport layer is 10-30nm and/or the thickness of the electrode layer is 70-90nm.
5. A method of manufacturing a perovskite solar cell as claimed in claim 1 or 2, comprising: and spin-coating the surface of the perovskite layer by using spin-coating liquid of the hole transport material to prepare the hole transport layer.
6. The method of manufacturing a perovskite solar cell according to claim 5, wherein the spin-on solution of the hole transporting material is prepared by: the fluorinated polythiophene was formulated into a chlorobenzene solution containing the fluorinated polythiophene, and then the chlorobenzene solution containing the fluorinated polythiophene was mixed with an acetonitrile solution of Li-TFSI and 4-t-BP.
7. The method for producing a perovskite solar cell according to claim 6, wherein the concentration of the fluorinated polythiophene in the chlorobenzene solution containing the fluorinated polythiophene is 5 to 30mg/mL.
8. The method of claim 7, wherein the concentration of the fluorinated polythiophene is 10-25mg/mL.
9. The method of claim 8, wherein the concentration of the fluorinated polythiophene is 10-20mg/mL.
10. The method according to any one of claims 6 to 9, characterized in that the volume ratio of the chlorobenzene solution containing the fluorinated polythiophene, the acetonitrile solution of Li-TFSI and the 4-t-BP is 1000:4-6:13-17.
11. The method according to claim 6, wherein the spin-coating speed is 2500 to 4000rpm in the operation of spin-coating the surface of the perovskite layer using the spin-coating liquid of the hole transport material.
12. The method for producing a perovskite solar cell according to claim 11, wherein the spin-coating speed is 2500-3500rpm.
13. The method according to claim 6, 11 or 12, wherein the spin-coating time is 20 to 40s in the operation of spin-coating the surface of the perovskite layer with the spin-coating liquid of the hole transport material.
14. The method of claim 13, wherein the spin-coating time is 25-35s.
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