CN111162161B - Infrared position sensor based on GaN/rGO, preparation method and detection method - Google Patents
Infrared position sensor based on GaN/rGO, preparation method and detection method Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 13
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- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
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Abstract
The invention relates to the field of photoelectric sensors, and provides an infrared position sensor based on GaN/rGO, a preparation method and a detection method. Under the irradiation of infrared laser light spots, the pyroelectric effect of GaN realizes the detection of the infrared light spot position by utilizing the relationship between the pyroelectric response of the device and the light spot displacement. Different from the traditional photoelectric position sensor based on PN junction or Schottky inner light effect, the pyroelectric effect generated by GaN spontaneous polarization is utilized to drive the position sensor to work, the device has a spectral response range wider than that of a silicon-based device (>1.1eV), and the application range of the current commercial device is greatly widened from purple light to far infrared.
Description
Technical Field
The invention relates to the field of photoelectric sensors, in particular to an infrared position sensor based on GaN/rGO, a preparation method and a detection method.
Background
The photoelectric conversion-based light spot position sensor is widely applied to the fields of civil life, industry, national defense and the like, can continuously detect the position and the change of a light spot without a blind area, and further reflects the displacement change of an observation target which changes synchronously with the light spot position, such as high-precision measurement of bionic vision of a robot, cantilever displacement detection of an atomic force microscope and the like.
Although the array image sensing device can also be used for detecting the position of the light spot, due to the existence of the array pixels, the existence of the light spot can not be sensed when the light spot falls between the two pixels, so that the displacement of the target is misjudged. The light spot position sensor based on the transverse photoelectric interaction of the device does not need to be separated into a plurality of pixel units, can be prepared into a large-area continuous photosensitive element, only senses the energy center position of a light spot, namely the size of the light spot is irrelevant to the detection of the position of the light spot, and can effectively solve the problem of a blind area of the array type image sensor.
The principle of the current commercial silicon-based photoelectric position sensor is mainly driven by an electric field which is generated by a PN junction or a Schottky inside a device and is vertical to the surface of the device, when a light spot irradiates a certain position on the surface, photogenerated excitons are separated up and down under the action of the electric field, and because two carriers are not uniformly diffused transversely, the difference of the same charge quantity collected by electrodes on two sides of the upper surface is related to the position between the light spot and the electrode, so that the position of the light spot is sensed. However, the spectrum of the current commercial device is limited by the forbidden band width (1.1eV) of silicon, and the near infrared-far infrared target cannot be detected; meanwhile, the preparation of the device needs to construct a multilayer structure to realize PN junction or Schottky, and relates to doping etching and the like, and the process is complex and the cost is high.
Disclosure of Invention
In order to solve the problems, the invention designs an infrared position sensor based on GaN/rGO,
the sensor is of a symmetrical structure and comprises a GaN substrate, ohmic contact electrodes at two end parts of the GaN substrate and an rGO layer which is arranged between the ohmic contact electrodes and is in contact with the ohmic contact electrodes; the GaN substrate Ga face and the rGO layer form a contact face, so that the rGO layer generates heat energy at the spot irradiation position, the spontaneous polarization at the position is changed, and shielding charges of the contact face are diffused to the electrodes at the two end parts to form a voltage difference.
Preferably, the length L of the rGO layer is 20mm-40mm, and the width D of the rGO layer is 1mm-3 mm.
Based on the same inventive concept, the invention further provides a preparation method of the sensor, which comprises the following steps:
s1: cutting the GaN substrate into strip structures, cleaning and blow-drying;
s2: depositing ohmic contact electrodes at two end parts of the substrate;
s3: forming a GO thin film on the GaN substrate;
s4: reducing the GO film to form a rGO layer with the length of L and the width of D, wherein the Ga surface of the GaN substrate and the rGO layer form a contact surface to enable the light spot to irradiate the position, the rGO layer generates heat energy, the spontaneous polarization of the position is changed, and shielding charges of the contact surface are diffused to two end electrodes to form voltage difference.
Preferably, the length of the strip-shaped structure in S1 is 20mm-40mm, and the width is 1mm-3 mm; the cleaning mode in the S1 is to use acetone reagent, isopropanol and deionized water to perform ultrasonic cleaning for 10min to 20min in sequence, and the blow-drying mode in the S1 is to perform nitrogen high-pressure blow-drying; the mode of depositing the ohmic contact electrode in the S2 is thermal evaporation or electron beam evaporation.
Preferably, the thickness of the ohmic contact electrode is 80mm-120 nm; the distance between the ohmic contact electrodes is 20mm-30 mm.
Preferably, the mode of forming the GO film by S3 is as follows:
s3.1, adding a GO solution into a suction filtration device provided with a 0.2-0.3 mu m fiber filter membrane, carrying out suction filtration for 10-40 min, and standing to volatilize a solvent to obtain GO powder;
s3.2, pressing the fiber filter membrane adhered with the GO powder on the GaN substrate;
s3.3 dissolving the fiber filter membrane by using an organic solvent to form the GO thin film.
Preferably, the S4 is specifically used for evaporating the residual solvent of the GO film in a nitrogen atmosphere at 1000-1200 ℃, and carrying out thermal reduction on the GO film.
The invention also provides a position detection method, which adopts the infrared position sensor or the sensor prepared by the method to implement the following steps
S1: infrared light spots irradiate the rGO layer to generate heat energy, so that spontaneous polarization at the position is changed, and shielding charges on a contact surface at the position are diffused to ohmic electrodes at two end parts to form a voltage difference;
s2: respectively detecting the transverse photovoltage V between the ohmic electrodes at the two end parts;
and S3, calculating the displacement x of the light spot offset sensing center:
x＝l·ln[kV+(k 2 V 2 +1) 1/2 ]
where k is a constant, l is the diffusion length of the carriers in the rGO layer, l is typically a few tens of microns.
Preferably, the spot size is 1 μm to 3 μm.
According to the infrared photoelectric position sensor based on GaN/rGO provided by the invention, as GaN on a Ga surface or an N surface has spontaneous polarization and pyroelectric effects, free charges exist on the surface of a capacitor structure, under the irradiation of infrared laser spots, an rGO layer at the irradiation position absorbs light energy to generate a photoinduced thermal effect, and the polarity of GaN at the position is changed, so that the free charges are diffused and released to the periphery, because the distances between electrodes at two transverse sides and the spots are different, the resistances from the spots to the electrodes are different, the difference of the charges collected by the electrodes is related to the positions of the spots, and the position determination of a near infrared target to a far infrared target is realized by testing the relation between the voltage generated by the pyroelectric at two ends of the electrodes and the positions of the laser spots.
Compared with the prior art, the invention has the following advantages:
GaN is a typical polar semiconductor, a very strong electric field perpendicular to the surface is generated, a multilayer PN junction or Schottky does not need to be constructed, shielding charges exist on the surface, the pyroelectric infrared light spot detection device has good pyroelectric property and piezoelectric property, and the detection of the infrared light spot position is realized by utilizing the relationship between the pyroelectric response of the device and the light spot displacement.
Different from the traditional infrared position sensor based on PN junction or Schottky inner light effect, the position sensor is driven to work by utilizing the pyroelectric effect generated by GaN spontaneous polarization, the device has a spectral response range wider than that of a silicon-based device (>1.1eV), the spectral response range is larger than that of the position sensor which is commercially used at present from purple light to far infrared light, and meanwhile, the structure and the preparation process of the device are simpler, and the preparation cost is lower. The application range of the current commercial device is greatly widened.
Drawings
FIG. 1 is a schematic diagram of a device structure according to an embodiment of the present invention
Detailed Description
The following detailed description of the preferred embodiments of the present invention will be given in conjunction with the accompanying drawings so that the features and functions of the present invention can be more easily understood by those skilled in the art, but the present invention is not limited to the following embodiments.
The first embodiment is as follows: the embodiment provides a preparation and detection method of an infrared photoelectric position sensor based on GaN/rGO, wherein GO is graphene oxide, rGO is redox graphene, 1550nm infrared laser is used as a light source, the size of a light spot is 2 microns, and the implementation process is as follows:
firstly, cutting a GaN substrate 1 with a Ga surface or an N surface into a strip structure with the length of 30mm and the width of 2mm, sequentially ultrasonically cleaning for 15 minutes by using an acetone reagent, isopropanol and deionized water, and then drying the surface of the substrate by using high-pressure nitrogen.
And sequentially plating a plurality of layers of metal Ti/Al/Ni/Au on two end parts of the GaN strip-shaped substrate by using a mask plate and electron beam evaporation or thermal evaporation to be used as ohmic contact electrodes 2, wherein the total thickness is about 100nm, and the distance between the electrodes is 25 mm.
Adding a 0.22 mu m fiber filter membrane into a vacuum filtration device, then adding a Graphene Oxide (GO) solution with a certain concentration into the vacuum filtration device, wherein the filtration process lasts for about 30min, and after the filtration is finished, placing the filter membrane in the air to allow the solvent to volatilize. And then inversely pressing the fiber filter membrane on the substrate plated with the ohmic contact electrode, fully contacting and wetting the fiber filter membrane with the substrate with the residual solvent, pressing the fiber filter membrane with the substrate by using a heavy object to enable GO to be adhered to the GaN substrate, and dissolving the cellulose membrane by using an organic solvent acetone after 10 hours, thereby obtaining the GO film with better flatness and controllable thickness on the substrate.
And then placing the sample in a nitrogen environment, heating to 1100 ℃, and coating a GO film by adopting a solution drop so that GO is completely reduced into an rGO layer 3, wherein the thickness of the rGO layer is controlled by the concentration of the GO solution.
When no light spot is irradiated, the voltage at two ends of the electrode of the device is zero, a light spot 5 of 1550nm laser is used for irradiating a certain position of the surface of the device, all photons are absorbed and converted into heat because the rGO layer 3 is made of a band gap-free material, the substrate at the position is rapidly heated, the polarization at the position on the GaN surface is changed, trapped charges are released to the periphery, diffused to the electrodes at two sides and receivedAnd (4) collecting. As shown in fig. 1, when the light spot is in the middle of the device, the voltage representation number is zero, and when the light spot is not in the middle of the device, the charges collected by the electrodes at the two sides are not equal, resulting in unequal potential, so that there is a relationship between the difference between the two (i.e. the photovoltage) and the position of the light spot, and the transverse photovoltage V between the electrodes at the two ends is detected; the relation x between the displacement x and the photovoltage V is adopted as l.ln [ kV + (k) 2 V 2 +1) 1/2 ]And calculating the displacement x of the center of the optical spot offset device, wherein k is a constant and l is the diffusion length of a carrier in the rGO layer 3 film. Two sets of (x, V) data are collected by displacement measurement and photovoltage measurement, and then substituted into the above formula to obtain the values of constants k and l. Therefore, the photoelectric voltage between the two electrodes is measured by a sensitive voltmeter such as the voltmeter 4, and finally the detection and the real-time monitoring of the position of the infrared light spot are realized.
The above-mentioned embodiments are provided to further explain the objects, technical solutions and advantages of the present invention in detail, and it should be understood that the above-mentioned embodiments are only examples of the present invention and are not intended to limit the present invention. It is within the spirit and scope of the present invention to change the location and name of the lateral structure by changing the thickness or doping concentration of a region.
Claims (1)
1. A position detection method is characterized in that an infrared position sensor is adopted to carry out the following steps,
s1: the infrared light spot irradiates the rGO layer of the infrared position sensor to generate heat energy, the spontaneous polarization at the position is changed, and shielding charges on the contact surface at the position are diffused to ohmic electrodes at two end parts to form a voltage difference;
s2: respectively detecting the transverse photovoltage V between the ohmic electrodes at the two end parts;
and S3, calculating the displacement x of the light spot offset sensing center:
x＝l·ln[kV+(k 2 V 2 +1) 1/2 ]；
wherein k is a constant and l is the diffusion length of carriers in the rGO layer;
the size of the light spot is 1-3 mu m;
the infrared position sensor is of a symmetrical structure and comprises a GaN substrate, and ohmic contact electrodes at two end parts on the GaN substrate and the rGO layer which is arranged between the ohmic contact electrodes and is in contact with the ohmic contact electrodes; the GaN substrate Ga face and the rGO layer form a contact face, so that the rGO layer at a light spot irradiation position generates heat energy, the spontaneous polarization at the position is changed, shielding charges of the contact face at the position are diffused to electrodes at two end parts to form voltage difference, the length L of the rGO layer is 20mm-40mm, and the width D of the rGO layer is 1mm-3 mm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006279032A (en) * | 2005-03-02 | 2006-10-12 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacturing method thereof |
| CN1923751A (en) * | 2005-12-19 | 2007-03-07 | 昆明理工大学 | Fast response optical heat radiation induced voltage material, preparation method and application |
| EP3176571A1 (en) * | 2015-12-04 | 2017-06-07 | IMEC vzw | Two-dimensional electron gas sensor |
| CN209166656U (en) * | 2019-01-22 | 2019-07-26 | 青岛歌尔智能传感器有限公司 | Pyroelectric infrared detector |
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| JP5417693B2 (en) * | 2007-08-22 | 2014-02-19 | 日本電気株式会社 | Semiconductor device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006279032A (en) * | 2005-03-02 | 2006-10-12 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacturing method thereof |
| CN1923751A (en) * | 2005-12-19 | 2007-03-07 | 昆明理工大学 | Fast response optical heat radiation induced voltage material, preparation method and application |
| EP3176571A1 (en) * | 2015-12-04 | 2017-06-07 | IMEC vzw | Two-dimensional electron gas sensor |
| CN209166656U (en) * | 2019-01-22 | 2019-07-26 | 青岛歌尔智能传感器有限公司 | Pyroelectric infrared detector |
Non-Patent Citations (2)
| Title |
|---|
| MaddakaReddeppa等.Solution-processed Au@rGO/GaN nanorods hybrid-structure for self-powered UV, visible photodetector and CO gas sensors.《Current Applied Physics》.2019,第19卷(第8期),全文. * |
| 田禾.基于石墨烯的新型微纳电子器件研究.《中国优秀博硕士学位论文全文数据库(博士) 信息科技辑(月刊)》.2016,(第08期),全文. * |
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Effective date of registration: 20230407 Address after: No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: SOUTH University OF SCIENCE AND TECHNOLOGY OF CHINA Address before: Taizhou building, No. 1088, Xueyuan Avenue, Xili University Town, Nanshan District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN THIRD GENERATION SEMICONDUCTOR Research Institute |