CN111947792B - Color detection system based on palladium diselenide/ultrathin silicon/palladium diselenide Schottky junction and preparation method thereof - Google Patents
Color detection system based on palladium diselenide/ultrathin silicon/palladium diselenide Schottky junction and preparation method thereof Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims abstract description 92
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 56
- 239000010703 silicon Substances 0.000 title claims abstract description 56
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910052763 palladium Inorganic materials 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 34
- 239000011521 glass Substances 0.000 claims description 33
- 239000010408 film Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 27
- 230000003287 optical effect Effects 0.000 description 6
- 238000011160 research Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
- H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a color detection system based on a palladium diselenide/ultrathin silicon/palladium diselenide Schottky junction and a preparation method thereof. The color detection system can detect the wavelength range of 460-810nm, spans the whole visible light region and relates to a part of near infrared bands, and has the advantages of high accuracy and repeatability.
Description
Technical Field
The invention belongs to the technical field of photoelectric detection, and particularly relates to a color detection system and a preparation method thereof.
Background
Photodetectors are optoelectronic devices that convert an optical signal into an electrical signal by the photoelectric effect, which is essentially due to the effect of optical radiation that causes a change in the electrical conductivity of a light-absorbing material. The method is widely applied to civil or military fields such as ray measurement and detection, industrial automatic control, missile guidance, night vision technology and the like. Depending on the application range of the detector, the current photodetectors can be classified into ultraviolet (wavelength 10-400 nm), visible (400-780 nm) and infrared (780 nm-20 μm) photodetectors.
The color detector belongs to one type of photoelectric detectors, and can realize detection of optical signals and effective identification of wavelengths. The low-cost high-performance color detector has important application value in a plurality of scientific research and industrial technical fields of artificial intelligence auxiliary driving, image sensing, optical communication, fire detection, biomedical imaging, environment monitoring, space detection, safety detection and the like, so that the color detector has wide attention of people.
Currently, crystalline silicon based photodetectors account for a major market share in the widely used visible-near infrared (wavelength <1100 nm) band. Silicon, an important semiconductor material, has been driving the progress of the semiconductor industry. However, since the thickness of silicon is too large to be integrated with infrastructures of various shapes and sizes, it is inconvenient to develop a photodetector. Ultra-thin silicon wafers are slowly under study based on higher requirements for light weight and flexibility. It is also an advantage that the use of a thinner silicon substrate helps to reduce electron-hole recombination for minority carriers having a shorter diffusion length. At present, the photoelectric detector composed of a single ultrathin silicon chip is widely researched, the research angle is too limited, the research range is too narrow, and the further development and the wide application of the silicon-based photoelectric detector are restricted. On the other hand, a single photoelectric detector can only detect optical signals, and cannot identify optical wavelengths, so that the wide application of the photoelectric detector in scientific research, industrial production and people's life is seriously hindered.
Disclosure of Invention
In order to avoid the defects of the prior art, the invention provides a color detection system based on a palladium diselenide/ultrathin silicon/palladium diselenide Schottky junction, and the system can effectively identify the wavelength of detected light.
The invention adopts the following technical scheme for realizing the purpose:
a color detection system based on palladium diselenide/ultrathin silicon/palladium diselenide Schottky junction is characterized in that: the color detection device comprises a glass substrate, wherein two color detection units are symmetrically arranged on the upper surface and the lower surface of the glass substrate;
the color detection unit comprises an n-type ultrathin silicon wafer fixed on the surface of the glass substrate, and a pair of palladium diselenide films is laid on the n-type ultrathin silicon wafer; one side of each of the two palladium diselenide thin films respectively exceeds the n-type ultrathin silicon wafer area and is positioned on the glass substrate, and a palladium diselenide contact electrode is arranged in the exceeding area; in the color detection unit, a metal semiconductor metal Schottky junction is formed by two palladium diselenide thin films and an n-type ultrathin silicon wafer;
when the color detection system is irradiated with light from above the upper color detection unit (the color detection unit located on the upper surface of the glass substrate) downward layer by layer, the current ratio of the upper color detection unit to the lower color detection unit decreases with the increase of the wavelength of the detected light, so that the wavelength of the detected light can be identified according to the current ratio.
Further, the thickness of the glass substrate is 0.8-1mm.
Furthermore, the n-type ultrathin silicon wafer is an n-type lightly doped silicon wafer with the thickness of 15-25 mu m and the resistivity of 1-7 omega cm.
Further, the thickness of the palladium diselenide thin film is 15nm-40nm.
Further, the palladium diselenide contact electrode is a conductive silver paste electrode.
The preparation method of the color detection system comprises the following steps:
step 4, silver paste electrodes are respectively dripped on the areas of the two palladium diselenide films, which exceed the n-type ultrathin silicon wafer, namely, a color detection unit is formed on the upper surface of the glass substrate;
and 5, forming the same color detection units on the lower surface of the glass substrate according to the same method in the steps 1 to 4, wherein the two color detection units are completely symmetrical relative to the glass substrate, and thus obtaining the color detection system.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention designs a color detection system based on a palladium diselenide/ultrathin silicon/palladium diselenide Schottky junction, which is formed by combining two palladium diselenide/ultrathin silicon/palladium diselenide Schottky junction color detection units symmetrically arranged on two sides of a glass substrate, wherein the detectable wavelength range of the system comprises 460-810nm, the system spans the whole visible light region and relates to a part of near infrared bands, and the system has the advantages of high accuracy and high repeatability.
2. The color detection system has the advantages of simple preparation process and low cost.
Drawings
FIG. 1 shows PdSe-based nanoparticles of the present invention 2 Ultra-thin silicon/PdSe 2 The structure of the color detecting system of the Schottky junction is shown schematically.
FIG. 2 shows the color detection system obtained in example 1 of the present invention at a wavelength of 400-1300 nm and an intensity of 100. Mu.W/cm 2 Under the detection conditions of 300K and 0V bias voltage, the upper color detection unit (I in the figure) p1 ) And a lower color detection unit (I in the figure) p2 ) The photocurrent-wavelength characteristic curve (FIG. 2 (a)) and the photocurrent ratio (I) p1 /I p2 ) -wavelength profile (fig. 2 (b));
FIG. 3 shows the color detection system obtained in example 1 of the present invention at a wavelength of 400-1300 nm and an intensity of 100. Mu.W/cm 2 Under the condition of 0V bias voltage and different detection temperatures (280K, 300K and 320K), the photocurrent ratio (lg (I) of the upper color detection unit and the lower color detection unit p1 /I p2 ) Vs. -wavelength plot contrast plot;
FIG. 4 shows the color detection system obtained in example 1 of the present invention under illumination (intensity of 100 μ W/cm) with wavelengths of 480 nm, 520 nm, 560 nm, 600 nm, 660 nm, 700 nm, 740nm and 5nm above and below the wavelength, respectively 2 ) The photocurrent ratio (I) of the upper color detection unit and the lower color detection unit under the detection conditions of 300K and 0V bias voltage p1 /I p2 ) -a wavelength profile contrast map;
the reference numbers in the figures: 1 is a glass substrate; 2 is an n-type ultrathin silicon wafer; 3 is a palladium diselenide film; and 4, a palladium diselenide contact electrode.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, specific embodiments thereof will be described in detail with reference to the following examples. The following is merely exemplary and illustrative of the inventive concept and various modifications, additions and substitutions of similar embodiments may be made to the described embodiments by those skilled in the art without departing from the inventive concept or exceeding the scope of the claims defined thereby.
Example 1
As shown in fig. 1, the color detection system based on the palladium diselenide/ultra-thin silicon/palladium diselenide schottky junction in the embodiment includes a glass substrate 1, wherein two color detection units are symmetrically arranged on the upper and lower surfaces of the glass substrate 1;
the color detection unit comprises an n-type ultrathin silicon wafer 2 fixed on the surface of the glass substrate, and a pair of palladium diselenide films 3 are laid on the n-type ultrathin silicon wafer 2; one side of each of the two palladium diselenide thin films 3 respectively exceeds the region of the n-type ultrathin silicon wafer 2 and is positioned on the glass substrate 1, and a palladium diselenide contact electrode 4 is arranged in the exceeding region; in the color detection unit, a metal semiconductor metal Schottky junction is formed by the two palladium diselenide thin films and the n-type ultrathin silicon wafer.
Specifically, in this embodiment: the thickness of the glass substrate 1 is 1mm; the n-type ultrathin silicon wafer 2 is an n-type lightly doped silicon wafer with the thickness of 20 mu m and the resistivity of 5 omega cm; the thickness of the palladium diselenide film 3 is 20nm; the palladium diselenide contact electrode 4 is a conductive silver paste electrode.
The preparation method of the color detection system of the embodiment comprises the following steps:
And 2, fixing the n-type ultrathin silicon wafer processed in the step 1 on the upper surface of the cleaned glass substrate.
Step 4, two PdSe reactions 2 And respectively dripping silver paste electrodes on the areas of the film beyond the n-type ultrathin silicon wafer, namely forming a color detection unit on the upper surface of the glass substrate.
And 5, forming the same color detection units on the lower surface of the glass substrate according to the same method of the steps 1 to 4, wherein the two color detection units are completely symmetrical relative to the glass substrate, and thus obtaining the color detection system.
FIG. 2 shows the wavelength of the color detection system of the present embodiment at 400-1300 nm and the intensity at 100 μ W/cm 2 Under the detection conditions of 300K and 0V bias voltage, the upper color detection unit (I in the figure) p1 ) And a lower color detection unit (I in the figure) p2 ) The photocurrent-wavelength characteristic curve (fig. 2 (a)) and the photocurrent ratio (I) p1 /I p2 ) Wavelength curve (fig. 2 (b)). It can be seen from the figure that when light irradiates the color detection system layer by layer from above the upper color detection unit downwards, the photocurrent of the upper color detection unit reaches a peak value at about 460nm to 500nm, the transmitted light irradiates the lower color detection unit, and the lower color detection unit starts to respond at about 800nm to 1000 nm. However, in the range of 460nm to 810nm, the current ratio of the upper color detection unit to the lower color detection unit monotonically decreases with the increase of the wavelength of the detected light, so that the wavelength of the detected light can be identified according to the current ratio. The wavelength range of the detection light can be adjusted and controlled by adjusting and controlling the thickness of the n-type ultrathin silicon chip and the palladium diselenide film.
FIG. 3 shows the color detection system obtained in this example at a wavelength of 400-1300 nm and an intensity of 100 μ W/cm 2 Under the condition of 0V bias voltage and different detection temperatures (280K, 300K and 320K), the photocurrent ratio (lg (I) of the upper color detection unit and the lower color detection unit p1 /I p2 ) Vs. -wavelength curve plot). It can be seen that the detection system has a broadened detection range at low temperatures, due to the low thermal excitation in silicon at low temperatures. But under different temperatures, the system can realize quasi-standard in the wave band with the wavelength of 460nm-810nmAnd (6) detecting.
As shown in FIG. 4, to detect the accuracy of the color detection to the wavelength detection in this embodiment, the ratio of the photo-current at the wavelengths 480, 520, 560, 600, 660, 700, and 740nm (denoted as (I) of the color detection system is detected again according to the same detection conditions as in FIG. 2 p1 /I p2 ) 1 ) Data ((I) corresponding to FIG. 2) p1 /I p2 ) 0 ) Comparing, calculating relative error: [ (I) p1 /I p2 ) 1 -(I p1 /I p2 ) 0 ]/(I p1 /I p2 ) 0 . The results showed relative errors at wavelengths 480, 520, 560, 600, 660, 700, 740nm of 2.9%, 0.15%, -13.2%, -0.23%, 4.44%, 10.96%, -6.10%, respectively. It can be seen that the color detection system of this embodiment has very high accuracy and repeatability in the 460-810nm range.
In addition, as shown in fig. 4, by performing the same detection at the wavelengths of 5nm above and below 480 nm, 520 nm, 560 nm, 600 nm, 660 nm, 700 nm and 740nm, it can be known that the system of the present embodiment can still accurately detect when the wavelengths are different by 5 nm.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (6)
1. A color detection system based on palladium diselenide/ultrathin silicon/palladium diselenide Schottky junction is characterized in that: the color detector comprises a glass substrate (1), wherein two color detection units are symmetrically arranged on the upper surface and the lower surface of the glass substrate (1);
the color detection unit comprises an n-type ultrathin silicon wafer (2) with the thickness of 15-25 mu m, which is fixed on the surface of the glass substrate, and a pair of palladium diselenide thin films (3) is paved on the n-type ultrathin silicon wafer (2); one side of each of the two palladium diselenide thin films (3) respectively exceeds the region of the n-type ultrathin silicon wafer (2) and is positioned on the glass substrate (1), and a palladium diselenide contact electrode (4) is arranged in the exceeding region; in the color detection unit, a metal semiconductor metal Schottky junction is formed by two palladium diselenide thin films and an n-type ultrathin silicon wafer;
when the color detection system is irradiated by light from above the upper color detection unit downwards layer by layer, the current ratio of the upper color detection unit to the lower color detection unit is reduced along with the increase of the wavelength of the detected light, so that the wavelength of the detected light can be identified according to the current ratio.
2. The color detection system of claim 1, wherein: the thickness of the glass substrate (1) is 0.8-1mm.
3. The color detection system of claim 1, wherein: the n-type ultrathin silicon wafer (2) is an n-type lightly doped silicon wafer with the resistivity of 1-7 omega cm.
4. The color detection system of claim 1, wherein: the thickness of the palladium diselenide thin film (3) is 15nm-40nm.
5. The color detection system of claim 1, wherein: the palladium diselenide contact electrode (4) is a conductive silver paste electrode.
6. A method of manufacturing a color detection system according to any one of claims 1 to 5, comprising the steps of:
step 1, placing an n-type ultrathin silicon wafer in hydrofluoric acid solution with mass concentration of 5% -10% or BOE etching solution for etching for 5-10 minutes, removing a natural oxide layer on the surface, taking out, cleaning and drying;
step 2, fixing the n-type ultrathin silicon wafer processed in the step 1 on the upper surface of a cleaned glass substrate;
step 3, laying a pair of palladium diselenide films on the n-type ultrathin silicon wafer; one side of each of the two palladium diselenide films respectively exceeds the region of the n-type ultrathin silicon wafer and is positioned on the glass substrate;
step 4, respectively dripping silver paste electrodes on the areas of the two palladium diselenide films, which exceed the n-type ultrathin silicon wafer, namely forming a color detection unit on the upper surface of the glass substrate;
and 5, forming the same color detection units on the lower surface of the glass substrate according to the same method in the steps 1 to 4, wherein the two color detection units are completely symmetrical relative to the glass substrate, and thus obtaining the color detection system.
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| US5512763A (en) * | 1993-10-28 | 1996-04-30 | Hitachi, Ltd. | Metal-semiconductor-metal photodetector |
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2020
- 2020-08-26 CN CN202010867080.6A patent/CN111947792B/en active Active
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| Title |
|---|
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