CN111146145B - 增强的半导体管芯及相关方法 - Google Patents

增强的半导体管芯及相关方法 Download PDF

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CN111146145B
CN111146145B CN201911040775.0A CN201911040775A CN111146145B CN 111146145 B CN111146145 B CN 111146145B CN 201911040775 A CN201911040775 A CN 201911040775A CN 111146145 B CN111146145 B CN 111146145B
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substrate
dies
metal
coupled
die
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CN111146145A (zh
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E·N·托伦蒂诺
周志雄
林育圣
许瑞霞
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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Abstract

本发明题为“增强的半导体管芯及相关方法”。本发明公开了形成多个增强的管芯的方法的实施方式，该实施方式可以包括：在衬底上形成多个管芯；以及图案化金属组框架以形成多个金属板。多个金属板可以对应于多个管芯。该方法可以包括将金属组框架耦接在多个管芯上方并切单多个管芯。多个管芯中的每个管芯可以包括来自耦接在多个管芯上方的多个金属板中的对应金属板。

Description

增强的半导体管芯及相关方法
技术领域
本文件的各方面整体涉及形成诸如绝缘栅双极晶体管的半导体管芯的方法。更具体的实施方式涉及在包括半导体管芯的衬底上方形成金属掩模。
背景技术
半导体器件包括在普通电气和电子设备(诸如车辆、电器、电话、计算机、其他计算设备和其他电子设备)中发现的集成电路。器件可以执行切换或整流功能。器件可以在半导体晶圆中形成并且被切单为多个半导体管芯(semiconductor die)。在切单时，管芯可以安装在封装上并与封装电气集成，然后该封装可以用在电气或电子设备中。
发明内容
形成多个增强的管芯(reinforced die)的方法的实施方式可以包括：在衬底上形成多个管芯；以及图案化金属组(metal gang)框架以形成多个金属板。多个金属板可以对应于多个管芯。方法可以包括将金属组框架耦接在多个管芯上方并且切单多个管芯。多个管芯中的每个管芯可以包括来自耦接在多个管芯上方的多个金属板中的对应金属板。
形成多个增强的管芯的方法的实施方式可包括以下各项中的一者、全部或任一者：
方法可以包括将基板耦接到衬底的侧面，该侧面与衬底的具有其上形成的多个管芯的侧面相反。
金属组框架可以包含铜。
金属组框架可通过粘合剂直接耦接到衬底。
将金属组框架耦接在多个管芯上方可以包括加热和压缩金属组框架和多个管芯。
切单金属组框架可以包括锯切或激光切割。
多个管芯可以包括多个绝缘栅双极晶体管。
衬底可以包括75微米或更小的厚度。
形成多个增强的管芯的方法的实施方式可以包括：在衬底的第一表面上形成多个管芯；以及图案化金属组框架以形成多个金属板。多个金属板可以对应于多个管芯。方法可以包括：将多个管芯上方的金属组框架耦接到衬底的第一表面；将基板耦接到衬底的与第一表面相反的第二表面；以及在将金属组框架耦接在多个管芯上方之后切单多个管芯。
形成多个增强的管芯的方法的实施方式可包括以下各项中的一者、全部或任一者：
金属组框架和基板可以各自包含铜。
金属组框架可以通过银烧结膏或焊料直接耦接到衬底。
将金属组框架耦接到衬底的第一表面以及将基板耦接到衬底的第二表面可以包括加热和压缩金属组框架、衬底和基板。
切单金属组框架可以包括锯切或激光切割。
多个管芯可以包括多个绝缘栅双极晶体管。
衬底可以包括75微米或更小的厚度。
增强的半导体衬底(reinforced semiconductor substrate)的实施方式可以包括图案化的金属组框架，其包括多个金属板。多个金属板可以在耦接到衬底的多个管芯上方耦接到衬底的第一表面。多个金属板中的每个金属板可以耦接到多个管芯中的至少一个管芯。
增强的半导体衬底的实施方式可包括以下各项中的一者、全部或任一者：
多个管芯可以包括多个绝缘栅双极晶体管。
衬底的厚度可以小于75微米。
增强的衬底可以包括耦接到衬底的第二表面的基板。第二表面可与第一表面相反。
增强的衬底可以包括耦接在金属组框架和衬底之间的焊料或银烧结物。
对于本领域的普通技术人员而言，通过说明书和附图并且通过权利要求书，上述以及其他方面、特征和优点将会显而易见。
附图说明
将在下文中结合附图来描述实施方式，在附图中类似标号表示类似元件，并且：
图1是增强的衬底的侧视图；
图2是金属组框架的顶视图；
图3是图2的金属组框架上方的烧结层的顶视图；
图4是基板的顶视图；
图5是图4的基板上方的烧结层的顶视图；
图6是增强的衬底的分解图，其示出了金属组框架和背金属板如何耦接到衬底；
图7是使用加热和压缩来粘结到衬底的金属组框架和基板的侧视图；
图8是粘结到衬底的金属组框架的顶视图；
图9是从衬底切单的多个管芯的顶视图；并且
图10是来自多个管芯的已切单管芯的放大透视图。
具体实施方式
本公开、其各方面以及实施方式并不限于本文所公开的具体部件、组装工序或方法元素。本领域已知的与预期增强半导体衬底符合的许多另外的部件、组装工序和/或方法元素将显而易见地能与本公开的具体实施方式一起使用。因此，例如，尽管本发明公开了具体实施方式，但是此类实施方式和实施部件可包括符合预期操作和方法的本领域已知用于此类增强的半导体衬底以及实施部件和方法的任何形状、尺寸、样式、类型、模型、版本、量度、浓度、材料、数量、方法元素、步骤等。
参见图1，示出了增强的衬底2的横截面侧视图。增强的衬底包括衬底4。术语“衬底”是指半导体衬底，因为半导体衬底是常见类型的衬底，然而，“衬底”不是用于指代所有半导体衬底类型的专门术语。类似地，术语“衬底”可以指晶圆，因为晶圆是常见类型的衬底，然而，“衬底”不是用于指代所有晶圆的专门术语。作为非限制性示例，在本文件中公开的可在各种实施方式中利用的各种半导体衬底类型可以是圆形的、倒圆的、正方形的、矩形的或任何其他封闭形状。在各种实施方式中，衬底4可以包含衬底材料，诸如作为非限制性示例，单晶硅、二氧化硅、玻璃、砷化镓、蓝宝石、红宝石、绝缘体上硅、碳化硅、多晶或无定形形式的任何前述物质以及用于构造半导体器件的任何其他衬底材料。在具体实施方式中，衬底可以是绝缘体上硅衬底。
衬底4在其中包括多个管芯，并且更具体地，可以包括在衬底的第一表面8中形成的多个管芯。在各种实施方式中，多个管芯可以包括功率半导体器件，诸如作为非限制性示例，绝缘栅双极晶体管(IGBT)、二极管、MOSFET或其他功率半导体器件。在其他实施方式中，多个管芯可以包括非功率半导体器件。在各种实施方式中，多个管芯中的管芯可以是16mm长和16mm宽。在其他实施方式中，管芯的宽度和/或长度可以大于或小于16mm。在各种实施方式中，衬底可以薄至75微米(μm)厚。在其他实施方式中，衬底可以比75μm更薄或更厚。
仍然参见图1，增强的衬底2可以包括耦接到衬底4的第一表面8的金属组框架6(板)。作为非限制性示例，金属组框架6可以包含铜、金、银、铝、任何其他金属、其任何合金以及它们的任何组合。在其他实施方式中，增强的衬底可以包括导电非金属组框架来代替金属组框架。参见图2，示出了金属组框架的顶视图。在各种实施方式中，金属组框架6可以被图案化。在此类实施方式中，金属组框架10可以包括多个金属板12。多个金属板12可以通过多个系杆14耦接在一起。在各种实施方式中，多个板12可以与衬底内的多个管芯相对应，或者当金属组框架6耦接到衬底4时，多个板12可以耦接在多个管芯上方。以这种方式，多个金属板中的每个金属板耦接到多个管芯中的至少一个管芯。如在这个意义上所使用的，对应意味着多个管芯由多个板覆盖，或者多个管芯中的每个单独管芯在管芯正上方具有金属组框架的金属板。在各种实施方式中，单个管芯可以对应于单个金属板。在其他实施方式中，多个管芯可以对应于单个板，从而意味着金属板可以覆盖多于一个的管芯。在具体实施方式中，两个管芯可以与单个金属板相对应或者各自至少部分地被单个金属板覆盖，三个管芯可以与单个金属板相对应或者各自至少部分地被单个金属板覆盖，四个管芯可以与单个金属板相对应或者各自至少部分地被单个金属板覆盖，或者多于四个的管芯可以与单个金属板相对应或者各自至少部分地被单个金属板覆盖。
再次参见图1，金属组框架6可以通过粘合剂层16耦接(并且可以直接耦接)到衬底4。作为非限制性示例，粘合剂层可以包含焊料、银或其他烧结材料、粘合剂膜或任何其他粘合剂或粘结材料。
仍然参见图1，在各种实施方式中，增强的衬底2可以包括基板18，该基板耦接到衬底4的与第一表面8相反的第二表面20。在其他实施方式中，增强的衬底不包括基板。在包括基板的实施方式中，作为非限制性示例，基板可以包含铜、铝、金、银、任何其他金属、其任何合金以及它们的任何组合。参见图4，示出了基板的顶视图。在各种实施方式中，基板18可以不被图案化，而可以是对应于衬底4的形状和/或尺寸的实心片材。在其他实施方式中，基板可以被图案化，并且可以使用与金属组框架相同的图案化来进行图案化。在一些实施方式中，基板可以是金属组框架。再次参见图1，基板18可以通过粘合剂层22耦接(并且可以直接耦接)到衬底4。作为非限制性示例，粘合剂层22可以包含焊料、银或其他烧结材料、粘合剂膜或任何其他粘合剂或粘结材料。
参见图6，示出了增强的衬底的分解图，其示出了金属组框架和基板如何耦接到衬底。在各种实施方式中，形成多个管芯的方法可以包括在衬底26上形成多个管芯24。衬底26可以包括本文公开的任何类型的衬底，并且多个管芯24可以包括本文公开的任何类型的管芯。形成多个管芯的方法还包括图案化金属组框架28以形成多个金属板30，该金属组框架可以是本文公开的任何类型的金属组框架。多个金属板30可以通过多个系杆32耦接在一起。多个金属板30对应于多个管芯24。如在这个意义上所使用的，对应意味着多个管芯24被配置成由多个板30覆盖，或者多个管芯中的每个单独管芯被配置成在管芯正上方具有金属组框架28的金属板。在各种实施方式中，单个管芯可以对应于单个金属板。在其他实施方式中，多个管芯可以对应于单个板，从而意味着金属板可以覆盖多于一个的管芯。在具体实施方式中，两个管芯可以与单个金属板相对应或者各自至少部分地被单个金属板覆盖，三个管芯可以与单个金属板相对应或者各自至少部分地被单个金属板覆盖，四个管芯可以与单个金属板相对应或者各自至少部分地被单个金属板覆盖，或者多于四个的管芯可以与单个金属板相对应或被单个金属板覆盖。在各种实施方式中，多个金属板也可以在尺寸和/或形状方面与多个管芯相对应。在具体实施方式中，每个金属板可以是与由金属板覆盖的管芯相同的尺寸。在其他实施方式中，每个金属板可以略小于由金属板覆盖的每个管芯。
形成多个管芯的方法包括将金属组框架28耦接到衬底26的第一表面38以及多个管芯24上方。在各种实施方式中，金属组框架28通过本文公开的任何粘合剂材料耦接到衬底并且可以直接耦接到衬底。参见图3，示出了图2的金属组框架上方的烧结层的顶视图。在各种实施方式中，粘合剂层(诸如烧结层34)可以形成在被配置成耦接到衬底的金属组框架的侧面上。在此类实施方式中，形成多个管芯的方法可以包括在将金属组框架耦接到衬底之前，将烧结层或其他粘合剂层丝网印刷或层压到金属组框架上方。
再次参见图6，形成多个管芯的方法可以包括将基板36耦接到衬底26的第二表面(与第一表面38相反)。在其他实施方式中，形成多个管芯的方法不包括将基板耦接到衬底。在具有基板的实施方式中，基板36可以是本文公开的任何类型的基板。在各种实施方式中，基板36可以使用本文公开的任何粘合剂材料来耦接到衬底。参见图5，示出了图4的基板上方的烧结层的顶视图。在各种实施方式中，粘合剂层(诸如烧结层40)可以形成在金属组框架的侧面上，该金属组框架被配置成在将基板耦接到衬底的第二表面之前耦接到衬底。在此类实施方式中，形成多个管芯的方法可以包括将烧结层或其他粘合剂层丝网印刷或层压到基板上。
参见图7，示出了使用加热和压缩来粘结到衬底的金属组框架和基板的侧视图。在各种实施方式中，形成多个管芯的方法可以包括增强的衬底26，这可以包括通过粘合剂材料42将金属组框架28粘结到衬底26，以及通过粘合剂材料44将基板36粘结到衬底26。金属组框架28和基板36可以通过加热和压缩金属组框架28、衬底26和基板36而耦接到衬底。在各种实施方式中，并且如图7所示，方法可包括将金属组框架28、衬底26和基板36的堆叠放置在热板46(或其他加热表面)上。形成多个管芯的方法可以包括通过热板46加热金属组框架28、衬底26和基板36，并且在各种实施方式中，可以包括使用压力工具48压缩金属组框架、衬底和基板。在其他实施方式中，方法可以包括通过加热而无压缩，或者通过压缩而无加热将衬底26粘结到金属组框架28和基板36。
如图7所示，形成多个管芯的方法包括形成具有耦接到衬底26的金属组框架28和基板36的增强的衬底。在其他实施方式中，方法可以包括形成具有耦接到衬底的金属组框架并且没有耦接到衬底的基板的增强的衬底。在此类实施方式中，金属组框架可以使用相同的加热、压缩或本文公开的任何其他耦接方法来耦接到衬底。
参见图8，示出了粘结到衬底的金属组框架的顶视图，并且参见图9，示出了从衬底切单的多个管芯的顶视图。形成多个管芯的方法包括在金属组框架28(和基板36，如果包括的话)粘结到衬底26之后从衬底切单多个管芯。在切单时，多个管芯中的每个管芯可以包括来自耦接在多个管芯上方的多个金属板30的对应金属板(以及基板的对应部分，如果包括的话)。切单可以包括从衬底中的管芯道50移除衬底材料并移除管芯道50中的系杆32的部分。在各种实施方式中，形成多个管芯的方法可以包括通过锯切来切单多个管芯。在此类实施方式中，锯条的宽度可以与多个金属板30之间的间距的宽度相同。在其他实施方式中，锯条的宽度可以小于金属板之间的间距的宽度。以这种方式，锯条仅需要锯穿系杆，从而导致在多个管芯的切单期间，较少的金属组框架迁移到衬底中。在其他实施方式中，可以使用激光烧蚀或切割、射流烧蚀、湿法蚀刻或等离子体蚀刻来切单多个管芯。在使用蚀刻来切单多个管芯的实施方式中，金属组框架28还可以在蚀刻期间用作掩模。
参见图10，示出了来自多个管芯的已切单管芯的放大透视图。如图所示，管芯52包括其中形成有管芯的衬底的一部分54、来自金属组框架的金属板30，以及用于将金属板30耦接到衬底的部分54的粘合剂层的一部分56。以这种方式，管芯52可以是增强的管芯。金属板30可以强化管芯52并减小可能导致管芯52中的缺陷(诸如裂缝)的机械应力。更具体地，管芯52现在可以通过金属板30直接粘结到粗线，诸如铜线或铝线。金属板30可以充分地增强的管芯52以允许将更粗和更可靠的金属线粘结到管芯52。使用较重线可以承受穿过半导体管芯的高电压和电流，并进而提高半导体管芯的性能。当处理具有大表面积的减薄管芯时，这种增强可能是特别有利的。在关于减薄大管芯的实施方式中，在管芯的拾取和放置和/或转移期间可能需要更大量的接触力。金属板可以提供必要的强度以承受增加的接触力。在各种实施方式中，管芯52还可以包括基板的一部分58。在各种实施方式中，管芯52可以足够厚并且可以不需要基板的部分58来支撑管芯52，然而，在其他实施方式(特别是包括减薄管芯的实施方式)中，基板可以进一步增强和稳定管芯52。
在各种增强的半导体衬底实施方式中，金属组框架可以包含铜。
在各种方法实施方式中，方法可以包括使用锯切或激光切割来切单金属组框架。
在各种增强的半导体衬底实施方式中，多个管芯可以包括多个绝缘栅双极晶体管。
在各种增强的半导体衬底实施方式中，金属组框架可通过粘合剂直接耦接到衬底。
在各种增强的半导体衬底实施方式中，金属组框架和基板可以各自包含铜。
在各种增强的半导体衬底实施方式中，金属组框架可以通过银烧结膏或焊料直接耦接到衬底。
在以上描述中提到增强的半导体衬底的具体实施方式以及实施部件、子部件、方法和子方法的地方，应当显而易见的是，可在不脱离其实质的情况下作出多种修改，并且这些实施方式、实施部件、子部件、方法和子方法可应用于其他增强的半导体衬底。

Claims (9)

1.一种增强的半导体衬底，包括：
图案化的金属组框架，所述图案化的金属组框架包括多个金属板和多个系杆，所述多个金属板在耦接到衬底的多个管芯上方耦接到所述衬底的第一表面；
其中所述多个金属板中的每个金属板耦接到所述多个管芯中的至少一个管芯，并且
其中所述多个系杆和所述多个金属板同时地耦接到所述衬底的所述第一表面。
2.根据权利要求1所述的衬底，其中所述衬底的厚度小于75微米。
3.根据权利要求1所述的衬底，还包括耦接到所述衬底的第二表面的基板，其中所述第二表面与所述第一表面相反。
4.一种增强的半导体衬底，包括：
图案化的组框架，所述图案化的组框架包括多个金属板和多个金属系杆，所述多个金属板在耦接到衬底的多个管芯上方耦接到所述衬底的第一表面；
其中所述多个金属板中的每个金属板耦接到所述多个管芯中的至少一个管芯，并且
其中所述多个金属系杆和所述多个金属板同时地耦接到所述衬底的所述第一表面。
5.根据权利要求4所述的衬底，其中所述衬底的厚度小于75微米。
6.根据权利要求4所述的衬底，其中所述多个金属板使用粘合剂直接耦接到所述衬底的所述第一表面。
7.根据权利要求4所述的衬底，其中所述多个管芯中的每个管芯包括所述多个金属板中的直接耦接在每个管芯上方的一个或更少的金属板。
8.一种增强的半导体衬底，包括：
图案化的组框架，所述图案化的组框架包括多个金属板，所述多个金属板通过多个系杆彼此耦接在一起，所述多个金属板在耦接到衬底的多个管芯上方耦接到所述衬底的第一表面；
其中所述多个金属板中的每个金属板耦接到所述多个管芯中的至少一个管芯，并且
其中所述多个系杆直接耦接在所述多个金属板之间，并且所述多个系杆与所述多个金属板位于同一平面内。
9.根据权利要求8所述的衬底，其中所述图案化的组框架包括导电的非金属材料。
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