CN111141784A - Oxide semiconductor thin film detection device and oxide semiconductor thin film detection method - Google Patents
Oxide semiconductor thin film detection device and oxide semiconductor thin film detection method Download PDFInfo
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- CN111141784A CN111141784A CN201911070597.6A CN201911070597A CN111141784A CN 111141784 A CN111141784 A CN 111141784A CN 201911070597 A CN201911070597 A CN 201911070597A CN 111141784 A CN111141784 A CN 111141784A
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- 239000010409 thin film Substances 0.000 title claims abstract description 546
- 239000004065 semiconductor Substances 0.000 title claims abstract description 353
- 238000001514 detection method Methods 0.000 title claims abstract description 235
- 238000000034 method Methods 0.000 claims abstract description 54
- 239000010408 film Substances 0.000 claims abstract description 49
- 238000005259 measurement Methods 0.000 claims abstract description 48
- 230000008859 change Effects 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims description 223
- 238000007689 inspection Methods 0.000 claims description 150
- 230000008569 process Effects 0.000 claims description 17
- 239000000284 extract Substances 0.000 claims description 5
- 238000012937 correction Methods 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 11
- 238000000605 extraction Methods 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/08—Measuring resistance by measuring both voltage and current
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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Abstract
Relates to an oxide semiconductor film detection device and method. The device includes: a voltage generating section that generates an applied voltage for detecting the oxide semiconductor thin film when the connection section is connected to the oxide semiconductor thin film; a voltage changing part that changes an applied voltage between a preset initial value and a preset maximum value; a resistance section connected to the connection section and the voltage generation section, respectively, and setting a resistance for measurement so that the applied voltage changed by the voltage change section is applied to the oxide semiconductor thin film through the resistance for measurement; an obtaining section that obtains a film voltage of the oxide semiconductor film based on whether or not the voltage of the oxide semiconductor film is measured; and a control unit that calculates a thin-film current using a resistance voltage applied to the measuring resistor when the thin-film voltage is obtained and a measuring resistor when the thin-film voltage is obtained, and then calculates a thin-film resistance of the oxide semiconductor thin film using the calculated thin-film current and thin-film voltage, when the thin-film voltage is obtained by the obtaining unit.
Description
Technical Field
The present invention relates to an oxide semiconductor thin film inspection apparatus and an oxide semiconductor thin film inspection method for inspecting electrical characteristics and the like of an oxide semiconductor thin film.
Background
An Oxide Semiconductor (Oxide Semiconductor) is made of a metal Oxide in a Semiconductor, and can be deposited on a substrate as an Oxide Semiconductor thin film in the process of manufacturing a display device, a Solar Cell (Solar Cell), or the like.
For example, In a process of manufacturing a Thin Film Transistor (TFT) of a display device, Indium Gallium Zinc Oxide (IGZO), which may be composed of indium (In), gallium (Ga), zinc (Zn), and oxygen (O), is deposited on a substrate to be formed as an oxide semiconductor thin film.
In the related art, the electrical characteristics of the oxide semiconductor thin film are detected in a state where a thin film formed of other substance than the oxide semiconductor thin film is deposited. Thus, in the related art, it is difficult to detect the electrical characteristics of the oxide semiconductor thin film itself due to the interaction between the oxide semiconductor thin film and other thin films, and the accuracy of the detection result is low.
Disclosure of Invention
Technical problem
The present invention has been made to solve the above-mentioned problems, and relates to an oxide semiconductor thin film inspection apparatus and an oxide semiconductor thin film inspection method, which can solve the difficulty in the operation of inspecting the electrical characteristics of an oxide semiconductor thin film itself and improve the accuracy of the inspection result.
Technical scheme
In order to solve the above-described technical problem, the present invention includes the following configurations.
The oxide semiconductor thin film inspection apparatus of the present invention may include: the connecting part is used for connecting an object to be detected; a voltage generating section that generates an applied voltage for detecting the oxide semiconductor thin film when the connection section is connected to the oxide semiconductor thin film corresponding to the object to be detected; a voltage changing part that changes the applied voltage generated by the voltage generating part between a preset initial value and a preset maximum value; resistance sections connected to the connection section and the voltage generation section, respectively, for setting a resistance for measurement so that the applied voltage changed by the voltage change section is applied to the oxide semiconductor thin film through the resistance for measurement; an obtaining section that obtains a film voltage of the oxide semiconductor thin film depending on whether or not a voltage of the oxide semiconductor thin film is measured; and a control unit that calculates a thin-film current using a resistance voltage applied to the measuring resistor when the thin-film voltage is obtained and a measuring resistor when the thin-film voltage is obtained, and then calculates a thin-film resistance of the oxide semiconductor thin film using the calculated thin-film current and the thin-film voltage, when the thin-film voltage is obtained by the obtaining unit.
The oxide semiconductor film detection method of the invention comprises the following steps: setting a measuring resistance for detecting the oxide semiconductor thin film; applying an applied voltage so that a voltage across the measuring resistor is applied to the oxide semiconductor thin film; determining whether a film voltage of the oxide semiconductor film is obtained in a process of changing the applied voltage from a preset initial value to a preset maximum value; extracting a resistance voltage applied to the measuring resistor at the time of obtaining the thin-film voltage, when the thin-film voltage is obtained; and calculating a thin film current using the extracted resistance voltage and a resistance for measurement at the time of obtaining the thin film voltage, and calculating a thin film resistance of the oxide semiconductor thin film using the calculated thin film current and the thin film voltage.
Effects of the invention
According to the present invention, the following effects can be achieved.
The present invention can adjust the voltage applied to the oxide semiconductor thin film to be higher than the band gap of the oxide semiconductor thin film, thereby improving the ease of work for detecting the electrical characteristics of the oxide semiconductor thin film itself and improving the accuracy of the detection result of the electrical characteristics of the oxide semiconductor thin film itself.
The invention can be used in accordance with the following principles such as O2Process conditions such as partial pressure ratio,The voltage applied to the oxide semiconductor thin film is changed in such a manner that the band gaps of the thin film states such as the thickness are different, so that the versatility of detecting the electrical characteristics of the oxide semiconductor thin film itself having various process conditions, thin film states, and the like can be improved.
Drawings
Fig. 1 and 2 are schematic configuration diagrams of an oxide semiconductor thin film inspection apparatus according to the present invention.
Fig. 3 to 5 are diagrams showing an example of a thin film voltage of a waveform obtained by the oxide semiconductor thin film inspection apparatus and the oxide semiconductor thin film inspection method of the present invention.
Fig. 6 to 9 are schematic configuration diagrams of the oxide semiconductor thin film inspection method according to the present invention.
Reference numerals
1: oxide semiconductor thin film inspection apparatus 2: voltage generating part
3: voltage changing unit 4: resistance part
5: the obtaining section 6: control unit
7: the switching section 8: waveform generating part
Detailed Description
Hereinafter, embodiments of the oxide semiconductor thin film inspection apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
Referring to fig. 1 and 2, an oxide semiconductor thin film inspection apparatus 1 according to the present invention inspects electrical characteristics of an oxide semiconductor thin film (not shown) formed on a substrate in a process of manufacturing a display device, a solar cell, or the like. For example, the oxide semiconductor thin film may be Indium Gallium Zinc Oxide (IGZO) formed of indium (In), gallium (Ga), zinc (Zn), and oxygen (O).
The oxide semiconductor thin film inspection apparatus 1 of the present invention includes: a voltage generating unit 2 for generating an applied voltage for detecting the oxide semiconductor thin film; a voltage changing unit 3 that changes the applied voltage generated by the voltage generating unit 2; a resistance unit 4 for setting a resistance for measurement; an obtaining section 5 that obtains a film voltage for the oxide semiconductor thin film based on whether or not the voltage of the oxide semiconductor thin film is measured; and a control unit 6 for obtaining a thin film detection value for the oxide semiconductor thin film by using the thin film voltage when the thin film voltage is obtained by the obtaining unit 5.
The resistance portion 4 is connected to the voltage generating portion 2 so as to be disposed between the voltage generating portion 2 and the oxide semiconductor thin film. The applied voltage generated by the voltage generating unit 2 is applied to the oxide semiconductor thin film via the measuring resistor set by the resistor unit 4. The obtaining section 5 obtains a film voltage to the oxide semiconductor thin film according to whether or not the voltage of the oxide semiconductor thin film is measured. At this time, due to the semiconductor characteristics of the oxide semiconductor thin film, only when a voltage applied to the oxide semiconductor thin film is larger than a band gap (BandGap) which is a difference in energy level (hereinafter, simply referred to as "band gap"), electrons are moved to form a current. Thus, when the voltage applied to the oxide semiconductor thin film is smaller than the energy band gap, no current flows, and therefore, the obtaining section 5 cannot obtain the thin film voltage because the voltage cannot be measured.
In order to solve this problem, the voltage changing part 3 changes the applied voltage generated by the voltage generating part 2 between a preset initial value and a preset maximum value. Thereby, the applied voltage generated by the voltage generating section 2 is applied to the oxide semiconductor thin film through the measuring resistor while being changed between the initial value and the maximum value by the voltage changing section 3. In this process, when the voltage applied to the oxide semiconductor thin film becomes high with respect to the energy band gap, a current flows, and therefore, since the voltage can be measured, the obtaining portion 5 obtains the thin film voltage. When the thin film voltage is obtained by the obtaining unit 5, the control unit 6 calculates a thin film current using a resistance voltage applied to the measuring resistor when the thin film voltage is obtained and a measuring resistor when the thin film voltage is obtained, and then calculates a thin film resistance of the oxide semiconductor thin film using the calculated thin film current and the thin film voltage. Thereby, the control section 6 can obtain a thin film detection value including the thin film current, the thin film resistance, and the like.
Therefore, the oxide semiconductor thin film inspection apparatus 1 of the present invention can achieve the following operational effects.
First, since the voltage changing section 3 changes the applied voltage, the oxide semiconductor thin film inspection device of the present invention can change the voltage applied to the oxide semiconductor thin film through the measuring resistor together. Thus, the oxide semiconductor thin film inspection device 1 of the present invention can adjust the voltage applied to the oxide semiconductor thin film to be larger than the band gap that the oxide semiconductor thin film has, so that a current flows to the oxide semiconductor thin film, thereby enabling inspection of the electrical characteristics of the oxide semiconductor thin film itself. Therefore, the oxide semiconductor thin film inspection apparatus 1 of the present invention can improve the ease of work for inspecting the electrical characteristics of the oxide semiconductor thin film itself, and can improve the accuracy of the inspection result of the electrical characteristics of the oxide semiconductor thin film itself.
Second, according to the conditions such as O during the manufacturing process2Process conditions such as a partial pressure ratio, a thin film state such as a thickness, etc., the oxide semiconductor thin films forming different energy band gaps. The oxide semiconductor thin film may have different energy band gaps for each portion. Even in this case, the oxide semiconductor thin film inspection apparatus 1 of the present invention changes the voltage applied to the oxide semiconductor thin film differently in a manner corresponding to the band gap that differs according to the process conditions, the film state, and the like of the oxide semiconductor thin film. The oxide semiconductor thin film inspection device 1 of the present invention changes the voltage applied to each portion of the oxide semiconductor thin film differently in a manner corresponding to the band gap different for each portion of the oxide semiconductor thin film. Therefore, the oxide semiconductor thin film inspection apparatus 1 of the present invention can improve versatility in inspecting electrical characteristics of the oxide semiconductor thin film itself having various process conditions, thin film states, and the like.
Hereinafter, the voltage generating section 2, the voltage changing section 3, the resistance section 4, the obtaining section 5, and the control section 6 will be specifically described with reference to the drawings.
Referring to fig. 1 and 2, the voltage generator 2 generates a voltage. The voltage generating section 2 may generate the applied voltage. The applied voltage is a voltage for detecting the oxide semiconductor thin film among the voltages generated by the voltage generating unit 2. The voltage generating unit 2 is connected to the resistance unit 4. Thereby, the applied voltage generated by the voltage generating portion 2 is applied to the resistance portion 4. The voltage generating portion 2 is electrically connected to the resistance portion 4 by a wire or the like.
Referring to fig. 1 and 2, the voltage changing part 3 is for changing the voltage generated by the voltage generating part 2. The voltage changing section 3 changes the applied voltage between the initial value and the maximum value in a case where the voltage generating section 2 generates the applied voltage. The initial value and the maximum value may be preset by a user, respectively. For example, the initial value may be set to 0V, and the maximum value may be set to 1200V. At this time, the voltage changing part 3 may change the applied voltage to increase the applied voltage from 0V to 1200V. The applied voltage may be changed by the voltage changing part 3 while being applied to the resistance part 4 after being generated by the voltage generating part 2. The voltage changing part 3 may be connected to the voltage generating part 2. The voltage changing portion 3 may be electrically connected to the voltage generating portion 2 by a wire or the like.
Referring to fig. 1 and 2, the resistance portion 4 is used to set a resistance. The resistance portion 4 can set a resistance for measurement. The resistance for measurement is a resistance for detecting the oxide semiconductor thin film among the resistances set by the resistance portion 4. The resistance portion 4 is connected to the voltage generating portion 2 so as to be disposed between the voltage generating portion 2 and the oxide semiconductor thin film. Thereby, the applied voltage generated by the voltage generating section 2 can be changed by the voltage changing section 3 while being applied to the oxide semiconductor thin film via the measuring resistance.
The resistance portion 4 may also be connected to the connection portion 10. The connecting part 10 is used for connecting to an object to be detected. When the connecting portion 10 is connected to the object to be detected, the resistance portion 4 and the object to be detected may be electrically connected to each other through the connecting portion 10. When the object to be detected is the oxide semiconductor thin film, the connection portion 10 may be connected to the oxide semiconductor thin film. When the object to be detected is the oxide semiconductor thin film, the connection portion 10 may be connected to a substrate on which the oxide semiconductor thin film is formed, or another thin film formed on the substrate together with the oxide semiconductor thin film. When the object to be detected is a substrate on which the oxide semiconductor thin film is not formed, the connection portion 10 may be connected to the substrate. The connecting portion 10 may be connected to the object to be detected using a plurality of connecting members 11. The plurality of connecting members 11 may be connected to different portions of the object to be detected from each other. The connection part 10 may be a probe card (ProbeCard). In this case, the plurality of probes (probes) of the Probe card correspond to the plurality of connecting members 11. The oxide semiconductor thin film inspection device 1 of the present invention may include the connection portion 10.
The resistance portion 4 can change the resistance. In this case, the resistance portion 4 may include a plurality of shunt resistors. The shunt resistors may be resistors having different sizes from each other. Thereby, the resistance section 4 adjusts the voltage applied from the voltage generating section 2 to selectively pass through any one of the shunt resistances, thereby changing the resistance. The resistance unit 4 is connected in series to the voltage generating unit so that any one of the shunt resistors is set as a basic resistance, and is connected in series to the basic resistance so that the remaining shunt resistors are set as variable resistors. The shunt resistors set as the variable resistors are connected in parallel with each other. At this time, the resistance portion 4 can adjust the resistance by passing the voltage applied from the voltage generating portion 2 only through the shunt resistance set as the basic resistance. The resistance section 4 can adjust the resistance by passing the voltage applied from the voltage generating section 2 through either one of the shunt resistance set as the basic resistance and the shunt resistance set as the variable resistance.
For example, when the voltage generator 2 generates the applied voltage, the resistance unit 4 may be adjusted so that the applied voltage selectively passes through any one of the shunt resistors, thereby changing the resistance for measurement. In this case, the resistance section 4 may be adjusted so that the applied voltage passes through only the shunt resistance set as the basic resistance, or so that the applied voltage selectively passes through either the shunt resistance set as the basic resistance or the shunt resistance set as the variable resistance, thereby changing the resistance for measurement. In the case where the thin-film voltage is not obtained even by changing the applied voltage to the maximum value, the resistance portion 4 may change the resistance for measurement. When changing the resistance for measurement, the voltage changing unit 3 increases the applied voltage again from the initial value. At this time, if the voltage changing portion 3 changes the applied voltage from the initial value to the maximum value, a different voltage can be applied to the oxide semiconductor thin film due to the change in the resistance for measurement. The voltage changing unit 3 may set and apply the initial value and the maximum value differently depending on the measurement resistance. At this time, if the measuring resistance is changed, the voltage changing section 3 extracts the initial value and the maximum value corresponding to the changed measuring resistance, and changes the applied voltage between the extracted initial value and the maximum value.
Thus, the oxide semiconductor thin film inspection apparatus 1 of the present invention can further improve versatility of detecting electrical characteristics of the oxide semiconductor thin film itself having various process conditions, thin film states, and the like by changing the measurement resistance by the resistance portion 4. Also, the oxide semiconductor thin film inspection apparatus 1 of the present invention can change the voltage applied to the oxide semiconductor thin film by changing the resistance for measurement while using the voltage generation section 2 and the voltage change section 3 as they are, and therefore, the ease of work for inspecting the electrical characteristics of the oxide semiconductor thin film itself can be further improved.
Referring to fig. 1 and 2, the obtaining unit 5 obtains a voltage. The obtaining section 5 may obtain the thin film voltage. The thin film voltage is a voltage obtained for the oxide semiconductor thin film among the voltages obtained by the obtaining section 5. The obtaining portion 5 may be electrically connected to the oxide semiconductor thin film. Thereby, the obtaining section 5 can measure the voltage of the oxide semiconductor thin film, thereby obtaining the thin film voltage. At this time, when a voltage lower than the energy band gap is applied to the oxide semiconductor thin film, the obtaining section 5 cannot obtain the thin film voltage because the voltage of the oxide semiconductor thin film cannot be measured. When a voltage higher than the energy band gap is applied to the oxide semiconductor thin film, the thin film voltage is obtained because the obtaining section 5 can measure the voltage of the oxide semiconductor thin film.
The obtaining portion 5 may also be connected to the connecting portion 10. The obtaining section 5 can measure the voltage of the oxide semiconductor thin film through the connection section 10. When the voltage is measured through the connection portion 10, the obtaining portion 5 may obtain the thin film voltage using the measured voltage. The obtaining portion 5 and the resistance portion 4 may be connected to different connecting members 11 among the plurality of connecting members 11 included in the connecting portion 10. For example, as shown in fig. 1, among the four connection members 11, any one of the connection members 11 disposed at the outermost side may be connected to the resistance portion 4, and the remaining one may be connected to the voltage generating portion 2. Two connection members disposed between the connection member 11 connected to the resistance portion 4 and the connection member 11 connected to the voltage generation portion 2 are connected to the obtaining portion 5. At this time, the connection portion 10 is formed to detect the oxide semiconductor thin film by a 4-probe method.
The obtaining part 5 may be connected to the control part 6. The obtaining section 5 may supply the obtained thin film voltage to the control section 6. The obtaining section 5 may supply the thin film voltage obtained by wireless communication, wired communication, or the like to the control section 6.
Referring to fig. 2, the obtaining part 5 may include a first measuring instrument 51.
The first measuring instrument 51 measures the voltage of the object to be detected. The first measuring instrument 51 may be electrically connected to the object to be measured through the connection portion 10, thereby measuring the voltage of the object to be measured. The first measuring instrument 51 is connected to two connection members disposed between the connection member 11 connected to the resistance portion 4 and the connection member 11 connected to the voltage generating portion 2. The first measuring instrument 51 supplies the measured voltage to the control section 6. When the object to be detected is the oxide semiconductor thin film, the first measuring instrument 51 measures the voltage of the oxide semiconductor thin film to obtain the thin film voltage.
Referring to fig. 2, the obtaining part 5 may include a second measuring instrument 52.
The second measuring instrument 52 is used to measure the voltage applied to the resistance portion 4. The second measuring instrument 52 may be connected to an inlet side of the resistance part 4 and an outlet side of the resistance part 4, respectively. The inlet side of the resistance part 4 is between the voltage generating part 2 and the resistance part 4. The exit side of the resistance portion 4 is between the resistance portion 4 and the object to be detected. When the connection portion 10 is provided, the exit side of the resistance portion 4 is between the resistance portion 4 and the connection portion 10. The second measuring instrument 52 supplies the measured voltage to the control portion 6. When the object to be detected is the oxide semiconductor thin film, the second measuring instrument 52 measures resistance voltage. The resistance voltage is a voltage applied to the measuring resistor for detecting the oxide semiconductor thin film among the voltages measured by the second measuring instrument 52. The second measuring instrument 52 extracts the resistance voltage at the time of obtaining the sheet voltage by the first measuring instrument 51 from the measured resistance voltages, and supplies the extracted resistance voltage to the control section 6.
Referring to fig. 2, the obtaining part 5 may include a third measuring instrument 53.
The third measuring instrument 53 is used to measure the voltage changed by the voltage changing part 3 after being generated by the voltage generating part 2. The third measuring instrument 53 is connected to the outlet side of the voltage generating part 2. The exit side of the voltage generating part 2 is between the voltage generating part 2 and the resistance part 4. The third measuring instrument 53 supplies the measured voltage to the control portion 6. When the object to be detected is the oxide semiconductor thin film, the third measuring instrument 53 measures an applied voltage applied to the resistance portion 4. The third measuring instrument 53 extracts an applied voltage at the time of obtaining the film voltage by the first measuring instrument 51 from the measured applied voltages, and supplies the extracted applied voltage to the control section 6.
Referring to fig. 1 and 2, the control unit 6 obtains a detection value. When the oxide semiconductor thin film is detected, the control portion 6 may obtain a thin film detection value of the oxide semiconductor thin film. The control unit 6 can obtain the film detection value by using the values supplied from the obtaining unit 5 and the resistance unit 4, as described in detail below.
First, the control unit 6 calculates the thin film current using the resistance voltage when the thin film voltage is obtained and the measurement resistance when the thin film voltage is obtained. The second measuring instrument 52 may provide a resistance voltage at which the thin film voltage is obtained. The resistance portion 4 can provide a resistance for measurement when the thin film voltage is obtained. The control unit 6 calculates the thin film current by an operation of dividing a resistance voltage at the time of obtaining the thin film by a resistance for measurement at the time of obtaining the thin film. The film current may be the film detection value. The control unit 6 stores the resistance voltage when the thin-film voltage is obtained, the resistance for measurement when the thin-film voltage is obtained, and the calculated thin-film current.
Then, the control unit 6 calculates the sheet resistance of the oxide semiconductor thin film using the calculated sheet current and the sheet voltage obtained by the obtaining unit 5. The first measuring instrument 51 may supply the film voltage obtained by the obtaining section 5. The control unit 6 may calculate the sheet resistance by an operation of dividing the calculated sheet current of the sheet voltage by the calculated sheet current. The sheet resistance and the sheet voltage may belong to the sheet detection value. The control unit 6 may store the sheet resistance and the sheet voltage. The control section 6 may also control the display device so that the film detection value is displayed by a display device (not shown).
The control section 6 may also control the voltage generating section 2, the voltage changing section 3, the resistance section 4, and the obtaining section 5, respectively. The voltage generating unit 2 generates a voltage according to the control of the control unit 6. The voltage changing portion 3 changes the voltage according to the control of the control portion 6. The resistance portion 4 may set a resistance according to the control of the control portion 6. The resistance portion 4 may also change the resistance according to the control of the control portion 6. The obtaining unit 5 performs measurement by the control unit 6, and extracts a measurement value necessary for calculating a detection value from among the measurement values.
Referring to fig. 1 and 2, the oxide semiconductor thin film inspection apparatus 1 of the present invention may include a moving part 20. At this time, the oxide semiconductor thin film inspection device 1 of the present invention may include the connection part 10.
The moving part 20 is used to move the connecting part 10. The moving part 20 may move the connecting part 10, thereby changing the sensing position of the object to be sensed. When the connecting portion 10 is connected to the object to be detected at the changed detection position, the changed detection position can be detected. The moving unit 20 may move the connecting unit 10 so as to change positions between N detection positions (N is an integer greater than 1) preset on the object to be detected until detection values are obtained at all the detection positions. The coordinate values of the detection position may be stored in the control unit 6 by a user in advance. The moving unit 20 may move the connection unit 10 according to the control of the control unit 6.
When the oxide semiconductor thin film is detected, the moving section 20 moves the connecting section 10 so as to change the position between N detection positions preset on the oxide semiconductor thin film until the thin film detection value is obtained at all the detection positions. For example, the moving unit 20 may move the connecting unit 10 so as to change the position between N detection positions provided on the oxide semiconductor thin film until the sheet resistance is calculated at all the detection positions. Thus, the oxide semiconductor thin film inspection device 1 of the present invention can obtain a thin film inspection value of the oxide semiconductor thin film for each inspection position. The film detection values of the oxide semiconductor thin film obtained in accordance with the respective detection positions can be used to verify the uniformity and the like of the oxide semiconductor thin film. Therefore, the oxide semiconductor thin film inspection apparatus 1 of the present invention contributes to making an accurate evaluation criterion for the oxide semiconductor thin film.
The moving part 20 may move the connection part 10 by a cylinder method using a hydraulic cylinder or a pneumatic cylinder, a Gear method using a Rack (Rack Gear) and a Gear (Rack Gear), a Ball Screw method using a Ball Screw (Ball Screw) and a Ball Nut (Ball Nut), a linear motor method using a Coil (Coil) and a permanent magnet, or the like. The moving part 20 further includes a Gantry (Gantry) to which the connecting part 10 is movably coupled.
When the oxide semiconductor thin film inspection device 1 of the present invention obtains the thin film inspection values at all the inspection positions by the moving unit 20, the control unit 6 may control the display device to display the thin film inspection values at the respective inspection positions by the display device. For example, the control unit 6 may control the display device to display, for each of the detection positions, an applied voltage when the thin-film voltage is obtained, a resistance voltage when the thin-film voltage is obtained, the thin-film voltage, the thin-film current, and the thin-film resistance. The control unit 6 may control the display device to independently display a numerical value by which the detection result of the entire oxide semiconductor thin film can be grasped. For example, the control section 6 may control the display device to independently display the maximum value, the minimum value, the average value, and the uniformity value of each of the plurality of film voltages, the plurality of film currents, and the plurality of film resistances obtained for the plurality of detection positions.
Referring to fig. 2, the oxide semiconductor inspection device 1 of the present invention may include a switching section 7.
The switch unit 7 is configured to convert the voltage applied by the voltage generating unit 2 into either a Positive (Positive) voltage or a Negative (Negative) voltage. The switch 7 may convert the applied voltage applied by the voltage generator into an applied voltage of a positive voltage or an applied voltage of a negative voltage when the oxide semiconductor thin film is detected. When the switch section 7 converts the applied voltage applied by the voltage generation section 2 into an applied voltage of a positive voltage, the voltage of the positive voltage is applied to the oxide semiconductor thin film. Thus, the control section 6 can obtain the thin film detection value by applying a voltage based on a positive voltage. When the switch section 7 converts the applied voltage applied from the voltage generation section 2 into an applied voltage of a negative voltage, the voltage of the negative voltage is applied to the oxide semiconductor thin film. Thus, the control section 6 can obtain the thin film detection value based on the applied voltage composed of the negative voltage. Therefore, the oxide semiconductor monitoring device 1 of the present invention can obtain the thin film detection value based on the applied voltage composed of the positive voltage and the thin film detection value based on the applied voltage composed of the negative voltage, thereby contributing to making various evaluation criteria for the oxide semiconductor thin film.
The switch unit 7 is connected between the voltage generating unit 2 and the resistance unit 4, respectively, to the voltage generating unit 2 and the resistance unit 4. Thus, the voltage generated by the voltage generator 2 can be applied to the switch 7 after being changed by the voltage changer 3, and can be applied to the resistor 4 after being converted into a negative voltage or a positive voltage by the switch 7. When the switch unit 7 is provided, the inlet side of the resistance unit 4 to which the second measuring instrument 52 is connected is between the switch unit 7 and the resistance unit 4. When the switch unit 7 is provided, the exit side of the voltage generator 2 to which the third measuring instrument 53 is connected is between the voltage generator 2 and the switch unit 7. The switching section 7 may be implemented by a metal oxide semiconductor field effect transistor H-Bridge (MOSFET H-Bridge).
Referring to fig. 2 and 3, the oxide semiconductor thin film inspection apparatus 1 of the present invention may include a waveform generating part 8.
The waveform generating unit 8 generates a waveform voltage in which a positive voltage and a negative voltage are alternately repeated, using the voltage applied from the voltage generating unit 2. The waveform generating unit 8 may generate a rectangular wave voltage using the voltage applied from the voltage generating unit 2. When the oxide semiconductor thin film is detected, the waveform generating section 8 may generate a reference voltage of a waveform using an applied voltage at the time of obtaining the thin film voltage. The applied voltage at which the thin film voltage is obtained is extracted by the first measuring instrument 51 and can be set as a reference voltage by the control section 6. The control unit 6 may set the reference voltage when the switching unit 7 obtains the thin-film voltage based on the applied voltage composed of the positive voltage and the thin-film voltage based on the applied voltage composed of the negative voltage, the reference voltage being the applied voltage when the thin-film voltage based on the applied voltage composed of the positive voltage is obtained. When the voltage generation section 2 generates the reference voltage according to the control of the control section 6, the waveform generation section 8 may generate the reference voltage of the waveform using the reference voltage. Thereby, the reference voltage of the waveform can be applied to the oxide semiconductor thin film.
The obtaining portion 5 may obtain the film voltage of the waveform of the oxide semiconductor thin film as the reference voltage of the waveform generated by the waveform generating portion 8 is applied to the oxide semiconductor thin film. Even if the reference voltage of the waveform is formed in a rectangular waveform state and applied to the oxide semiconductor thin film, the film voltage of the waveform may be changed from a rectangular waveform state (shown by dotted lines) to a hysteresis curve state (shown by solid lines) as shown in fig. 3. This is because distortion occurs in the transition between the positive voltage and the negative voltage due to the charges accumulated in the oxide semiconductor thin film during the inspection of the oxide semiconductor thin film.
When the thin-film voltage of the waveform generated by the waveform generating unit 8 is obtained using the reference voltage of the waveform, the control unit 6 calculates the level value of the oxide semiconductor thin film using a first area value corresponding to a positive voltage in the thin-film voltage of the waveform and a second area value corresponding to a negative voltage in the thin-film voltage of the waveform. Therefore, the oxide semiconductor thin film inspection apparatus 1 of the present invention contributes to making more various evaluation criteria for the oxide semiconductor thin film by the level value, specifically as follows.
First, the control unit 6 may obtain the first area value by an operation of integrating the portions PA and PA' corresponding to the positive voltage in the thin-film voltage integration of the waveform. At this time, the control portion 6 adds up the area values of the portions PA, PA' corresponding to the positive voltages within a preset unit time UT (shown in fig. 3), so that the first area value can be obtained. The unit time UT may be preset by a user.
Then, the control section 6 may obtain the second area value by an operation of integrating the portions NA, NA' corresponding to the negative voltage in the thin-film voltage of the waveform. At this time, the control portion 6 adds up the area values of the portions NA, NA' corresponding to the negative voltage within the unit time UT, thereby obtaining the second area value.
Then, the control portion 6 may obtain the level value through an operation of subtracting the second area value from the first area value. The first area value is a component value related to a P-shaped semiconductor, and the second area value is a component value related to an N-shaped semiconductor. Therefore, when the level value is a positive value, it indicates that the composition value related to the P-type semiconductor in the oxide semiconductor thin film is excessive. When the level value is a negative value, it indicates that the composition value relating to the N-type semiconductor in the oxide semiconductor thin film is excessive.
In this manner, the oxide semiconductor thin film inspection apparatus 1 of the present invention obtains the level value for the oxide semiconductor thin film, thereby contributing to making an evaluation criterion regarding the properties of the oxide semiconductor thin film.
Referring to fig. 2, 4 and 5, the waveform generating unit 8 may generate a reference voltage having a waveform corresponding to a positive voltage and a reference voltage having a waveform corresponding to a negative voltage using a voltage applied from the voltage generating unit 2. That is, the waveform generating unit 8 may generate the reference voltage having the waveform corresponding to the positive voltage and the reference voltage having the waveform corresponding to the negative voltage. When the oxide semiconductor thin film is detected, the waveform generating section 8 may generate a reference voltage of a waveform corresponding to a positive voltage and a reference voltage of a waveform corresponding to a negative voltage using an applied voltage at the time of obtaining the thin film voltage. In this way, after the reference voltage having the waveform corresponding to the positive voltage is applied to the oxide semiconductor thin film, the reference voltage having the waveform corresponding to the negative voltage can be applied. The reference voltage having a waveform corresponding to the negative voltage may be applied to the oxide semiconductor thin film, and then the reference voltage having a waveform corresponding to the positive voltage may be applied.
The obtaining portion 5 may obtain the thin-film voltage of the waveform corresponding to the positive voltage for the oxide semiconductor thin film as the reference voltage of the waveform corresponding to the positive voltage generated by the waveform generating portion 8 is applied to the oxide semiconductor thin film. Even if the reference voltage of the waveform corresponding to the positive voltage is applied to the oxide semiconductor thin film in a rectangular wave form, as shown in fig. 4, the thin film voltage of the waveform corresponding to the positive voltage may be changed from the rectangular wave form (shown by dotted lines) to a hysteresis curve form (shown by solid lines).
When the reference voltage of the waveform corresponding to the negative voltage generated by the waveform generating section 8 is applied to the oxide semiconductor thin film, the obtaining section 5 obtains the thin film voltage of the waveform corresponding to the negative voltage for the oxide semiconductor thin film. Even if the reference voltage of the waveform corresponding to the negative voltage is formed in a rectangular waveform state and applied to the oxide semiconductor thin film, as shown in fig. 5, the thin film voltage of the waveform corresponding to the negative voltage may be changed from a rectangular waveform state (shown by dotted lines) to a hysteresis curve state (shown by solid lines).
When the thin-film voltage of the waveform corresponding to the positive voltage and the thin-film voltage of the waveform corresponding to the negative voltage are obtained using the reference voltage of the waveform corresponding to the positive voltage and the reference voltage of the waveform corresponding to the negative voltage generated by the waveform generation unit 8, the control unit 6 calculates the level value of the oxide semiconductor using a first area value corresponding to the positive voltage obtained from the thin-film voltage of the waveform corresponding to the positive voltage and a second area value corresponding to the negative voltage obtained from the thin-film voltage of the waveform corresponding to the negative voltage. Therefore, the oxide semiconductor thin film inspection apparatus 1 of the present invention contributes to making more various evaluation criteria for the oxide semiconductor thin film.
The oxide semiconductor thin film inspection apparatus 1 of the present invention can obtain the level values for all the inspection positions by the moving unit 20. In this case, the control unit 6 may control the display device to display the first area value, the second area value, and the level value for each of the detection positions. The control unit 6 may control the display device so that the display device independently displays a maximum value, a minimum value, an average value, and a uniformity value for a plurality of horizontal values obtained at a plurality of detection positions.
The waveform generating part 8 may be connected between the voltage generating part 2 and the resistance part 4. When the oxide semiconductor thin film detection device 1 of the present invention includes the switch 7, the waveform generation unit 8 may be connected to the switch 7.
Referring to fig. 1 and 2, the oxide semiconductor thin film inspection apparatus 1 of the present invention inspects a substrate on which the oxide semiconductor thin film is not formed to obtain a substrate inspection value, and reflects the substrate inspection value on a thin film inspection value for the oxide semiconductor thin film to obtain a corrected inspection value. Thus, the oxide semiconductor thin film inspection apparatus 1 of the present invention can eliminate the influence of the substrate on the inspection result of the oxide semiconductor thin film itself when inspecting the oxide semiconductor thin film in a state where the oxide semiconductor thin film is formed on the substrate. Therefore, the oxide semiconductor thin film inspection apparatus 1 of the present invention can further improve the accuracy of the inspection result of the oxide semiconductor thin film itself. For example, when the oxide semiconductor thin film is formed on a substrate made of silicon such as a silicon wafer, the oxide semiconductor thin film inspection device 1 of the present invention can obtain the inspection value of the substrate and obtain the corrected inspection value using the inspection value of the thin film and the inspection value of the substrate.
The substrate on which the oxide semiconductor thin film is not formed may be in a state in which other thin films including the oxide semiconductor thin film to be detected are not formed. The substrate on which the oxide semiconductor thin film is not formed may be in a state in which other thin films than the oxide semiconductor thin film to be detected are deposited. That is, the substrate on which the oxide semiconductor thin film is not formed may include a state in which another thin film is formed, and may be a state in which the oxide semiconductor thin film to be detected is not formed.
Specifically, the process of obtaining the substrate inspection value and the corrected inspection value by the oxide semiconductor thin film inspection apparatus 1 of the present invention is as follows.
First, when the connection part 10 is connected to the substrate corresponding to the object to be detected, the voltage generation part 2 generates a detection voltage. The oxide semiconductor thin film is not formed on the substrate corresponding to the object to be detected. The detection voltage is a voltage for detecting the substrate among the voltages generated by the voltage generating unit 2. The detection voltage and the applied voltage may be the same as each other.
Then, the voltage changing portion 3 may change the detection voltage generated by the voltage generating portion 2 from a preset initial detection value to a maximum detection value. The initial detection value and the maximum detection value may be preset by a user. For example, the initial detection value may be set to 0V, and the maximum detection value may be set to 1200V. The initial detection value and the initial value may be identical to each other. The maximum detection value and the maximum value may be identical to each other.
Then, the resistance unit 4 sets the detection resistance. The detection resistance is a resistance for detecting the substrate among the resistances set by the resistance portion 4.
Then, the obtaining unit 5 obtains the substrate voltage of the substrate based on whether or not the substrate voltage can be measured. The substrate voltage is a voltage obtained for the substrate among the voltages obtained by the obtaining section 5. In the state where the detection resistance is set, the resistance portion 4 may change the resistance for measurement when the substrate voltage is not obtained even by changing the detection voltage to the maximum detection value. When changing the resistance for measurement, the voltage changing unit 3 may increase the detection voltage again from the initial detection value.
When the substrate voltage is obtained by the obtaining unit 5, the control unit 6 calculates the substrate current using the detected resistance voltage when the substrate voltage is obtained and the detected resistance when the substrate voltage is obtained. The detection resistance voltage at the time of obtaining the substrate voltage may be supplied from the second measuring instrument 52. The resistance detection portion 4 may provide a detection resistance when the substrate voltage is obtained. The control unit 6 may calculate the substrate current by an operation of dividing a detected resistance voltage when the substrate voltage is obtained by a detected resistance when the substrate voltage is obtained. The substrate current may be the substrate detection value. The control unit 6 may store the detected resistance voltage when the substrate voltage is obtained, the detected resistance when the substrate voltage is obtained, and the calculated substrate current.
Then, the control unit 6 calculates the substrate resistance using the calculated substrate current and the substrate voltage obtained by the obtaining unit 5. The substrate voltage obtained by the obtaining section 5 may be supplied from the first measuring instrument 51. The control unit 6 may calculate the substrate resistance by an operation of dividing the substrate voltage by the calculated substrate current. The substrate resistance and the substrate voltage may be the substrate detection value. The control unit 6 may store the substrate resistance and the substrate voltage.
Then, the control section 6 may subtract the substrate detection value from the film detection value to obtain the correction detection value. The control section 6 may obtain the correction detection value by performing an operation between values associated with each other in the film detection value and the substrate detection value. For example, the control unit 6 may obtain a correction value of the applied voltage when the thin film voltage is obtained by subtracting the detected voltage when the substrate voltage is obtained from the applied voltage when the thin film voltage is obtained. For example, the control unit 6 may subtract the substrate voltage from the thin film voltage, subtract the substrate current from the thin film current, and subtract the substrate resistance from the thin film resistance. Thereby, the control unit 6 can obtain a correction value for the sheet resistance, a correction value for the sheet current, and a correction value for the sheet resistance.
The oxide semiconductor thin film inspection apparatus 1 of the present invention obtains the corrected inspection value by obtaining the inspection value of the substrate for all of the N predetermined inspection positions by the moving unit 20. In this case, the control unit 6 may control the display device so that the correction detection value is displayed for each detection position by the display device.
When a substrate on which the oxide semiconductor thin film is not formed is detected to obtain a substrate detection value, the oxide semiconductor thin film inspection apparatus 1 of the present invention can obtain the substrate detection value based on a detection voltage composed of a positive voltage by the switching section 7. In the oxide semiconductor thin film inspection apparatus 1 of the present invention, after the substrate inspection value is obtained based on the inspection voltage composed of the positive voltage by the switch 7, the substrate inspection value may be obtained based on the inspection voltage composed of the negative voltage by the switch 7. In the case where the substrate detection value based on the detection voltage composed of the positive voltage and the substrate detection value based on the detection voltage composed of the negative voltage are obtained, the control section 6 may obtain the corrected detection value based on the applied voltage composed of the positive voltage by subtracting the substrate detection value based on the detection voltage composed of the positive voltage from the thin film detection value based on the applied voltage composed of the positive voltage. The control unit 6 may obtain a corrected detection value based on the applied voltage of the negative voltage by subtracting a substrate detection value based on the detection voltage of the negative voltage from a thin film detection value based on the applied voltage of the negative voltage.
Hereinafter, embodiments of the oxide semiconductor thin film inspection method according to the present invention will be described in detail with reference to the drawings.
Referring to fig. 1 to 6, the oxide semiconductor thin film inspection method of the present invention inspects electrical characteristics of an oxide semiconductor thin film formed on a substrate in the process of manufacturing a display device, a solar cell, or the like. For example, the oxide semiconductor thin film may be Indium Gallium Zinc Oxide (IGZO) formed of indium (In), gallium (Ga), zinc (Zn), and oxygen (O). The oxide semiconductor thin film inspection method of the present invention can be implemented by the oxide semiconductor thin film inspection apparatus 1 of the present invention described above.
The oxide semiconductor thin film inspection method of the present invention includes a step (S100) of inspecting an oxide semiconductor thin film for the first time. The first inspecting of the oxide semiconductor thin film (S100) may be performed on the oxide semiconductor thin film formed on the substrate. The step (S100) of first inspecting the oxide semiconductor thin film includes the following steps.
First, a resistance for measurement is set (S110). In this step (S110), a measurement resistance for detecting the oxide semiconductor thin film may be set. The step of setting the measuring resistance (S110) may be performed by the resistance part 4.
Then, an applied voltage is applied (S120). In this step (S120), an applied voltage for detecting the oxide semiconductor thin film may be applied. In the step of applying an applied voltage (S120), the applied voltage may be generated by the voltage generation part 2, and changed between the initial value and the maximum value by the voltage change part 3. In this manner, an applied voltage that changes between the initial value and the maximum value can be applied to the resistance portion 4 and to the oxide semiconductor thin film via the measuring resistance.
Then, it is judged whether or not the thin film voltage is obtained (S130). In this step (S130), it may be determined whether or not the film voltage of the oxide semiconductor thin film is obtained in a process in which the applied voltage is changed from the initial value to the maximum value and applied to the oxide semiconductor through the measuring resistance. The step of determining whether or not the thin film voltage is obtained (S130) may be performed by the obtaining section 5. The step of determining whether or not the thin film voltage is obtained (S130) may be performed by the control unit 6. At this time, the control unit 6 may determine that the thin film voltage is obtained when receiving the thin film voltage from the obtaining unit 5.
Then, when the thin film voltage is obtained, a thin film extraction value is obtained (S140). In this step (S140), a value for detecting the electrical characteristic of the oxide semiconductor thin film may be extracted in a case where the thin film voltage is obtained. The step of obtaining a thin film extraction value (S140) may be performed by the obtaining unit 5. The step of obtaining a thin film extraction value (S140) may include the step of extracting a resistance voltage (S141). In the step (S141) of extracting the resistance voltage, the resistance voltage applied to the measuring resistor may be extracted when the thin-film voltage is obtained by the obtaining unit 5. The step of extracting the resistance voltage (S141) may also be implemented by the second measuring instrument 52.
Then, a film detection value is obtained (S150). In this step (S150), a thin film detection value including the thin film current and the thin film resistance may be obtained. The step of obtaining a film detection value (S150) may be performed by the control unit 6. The step of obtaining a thin film detection value (S150) may include a step of calculating a thin film current (S151) and a step of calculating a thin film resistance (S152).
In the step (S151) of calculating the thin film current, the thin film current can be calculated using the resistance voltage extracted in the step (S141) of extracting the resistance voltage and the resistance for measurement when the thin film voltage is obtained. The step of calculating the thin film current (S151) may be performed by the control unit 6. The control unit 6 may calculate the thin film current by dividing the resistance voltage by the measurement resistance.
In the step of calculating the sheet resistance (S152), the sheet resistance may be calculated using the sheet current and the sheet voltage calculated in the step of calculating the sheet current (S151). The step of calculating the sheet resistance (S152) may be performed by the control unit 6. The control unit 6 may calculate the sheet resistance by an operation of dividing the sheet voltage by the sheet current.
In this way, the oxide semiconductor thin film inspection method of the present invention can detect the electrical characteristics of the oxide semiconductor thin film itself by changing the applied voltage from the initial value to the maximum value while adjusting the voltage applied to the oxide semiconductor thin film to be higher than the band gap of the oxide semiconductor thin film, thereby causing a current to flow in the oxide semiconductor thin film. Therefore, the oxide semiconductor thin film inspection method of the present invention can improve the ease of work for inspecting the electrical characteristics of the oxide semiconductor thin film itself, and can improve the accuracy of the inspection result of the electrical characteristics of the oxide semiconductor thin film itself. In addition, the oxide semiconductor thin film detection method of the present invention can change the voltage applied to the oxide semiconductor thin film differently so as to correspond to the band gap which differs according to the process conditions, the thin film state, and the like of the oxide semiconductor thin film, and thus can improve the versatility of detecting the electrical characteristics of the oxide semiconductor thin film itself having various process conditions, the thin film state, and the like.
Referring to fig. 1 to 6, the step of first inspecting the oxide semiconductor thin film (S100) may include a step of re-performing (S160).
In the re-executing step (S160), the step of setting the resistance for measurement (S110), the step of applying the applied voltage (S120), and the step of determining whether or not the thin film voltage is obtained (S130) may be re-executed after changing the resistance for measurement when the thin film voltage is not obtained. Accordingly, the oxide semiconductor thin film inspection method of the present invention can change the resistance for measurement through the re-executed step (S160) while inspecting the electrical characteristics of the oxide semiconductor thin film, and thus, the versatility of inspecting the electrical characteristics of the oxide semiconductor thin film itself having various process conditions, thin film states, and the like can be further improved. The re-performing step (S160) may be repeatedly performed while changing the resistance for measurement until the thin film voltage is obtained. When the step (S120) of applying the applied voltage is re-executed by the re-execution step (S160), the initial value and the maximum value corresponding to the changed resistance for measurement may be extracted, and the applied voltage may be changed between the extracted initial value and the maximum value. In this case, the initial value and the maximum value may be set differently depending on the measurement resistance.
Referring to fig. 1 to 6, the first detecting of the oxide semiconductor thin film (S100) may obtain the thin film detection value based on an applied voltage consisting of a positive voltage. At this time, in the step of applying an applied voltage (S120), an applied voltage of a positive voltage may be applied. The step (S120) may be performed to apply a voltage of a positive voltage to the oxide semiconductor thin film as the switch unit 7 changes the applied voltage applied from the voltage generation unit 2 to the applied voltage of a positive voltage. In the step of obtaining a thin film detection value (S150), the thin film detection value may be obtained based on an applied voltage consisting of a positive voltage. In this case, in the step (S151) of calculating the thin film current, the thin film current may be calculated based on an applied voltage consisting of a positive voltage. In the step (S152) of calculating the sheet resistance, the resistance may be calculated based on an applied voltage of a positive voltage.
Referring to fig. 1 to 6, in the first inspection of the oxide semiconductor thin film (S100), the thin film inspection value may be obtained based on an applied voltage of a positive voltage, and then the thin film inspection value may be further obtained based on an applied voltage of a negative voltage. In this case, in the step (S120) of applying the applied voltage, the applied voltage may be applied as a negative voltage. The step (S120) may be performed to apply a voltage of a negative voltage to the oxide semiconductor thin film as the switching unit 7 changes from the applied voltage applied by the voltage generating unit 2 to the applied voltage of a negative voltage. In the step of obtaining a thin film detection value (S150), the thin film detection value may be obtained based on an applied voltage consisting of a negative voltage. In this case, in the step (S151) of calculating the thin film current, the thin film current may be calculated based on an applied voltage composed of a negative voltage. In the step of calculating the sheet resistance (S152), the resistance may be calculated based on an applied voltage consisting of a negative voltage. Therefore, the oxide semiconductor detection method of the present invention can obtain a thin film detection value based on an applied voltage composed of a positive voltage and a thin film detection value based on an applied voltage composed of a negative voltage, thereby contributing to making various evaluation criteria for the oxide semiconductor thin film.
Referring to fig. 1 to 6, the first inspection of the oxide semiconductor thin film may be repeatedly performed for N inspection positions preset on the oxide semiconductor thin film (S100) until the thin film inspection value is calculated at all the inspection positions. For example, the step of detecting the oxide semiconductor thin film (S100) for the first time may be repeatedly performed for N detection positions preset on the oxide semiconductor thin film until the sheet resistance is calculated at all the detection positions. When the step of first detecting the oxide semiconductor thin film is repeated for all the detection positions (S100) until the thin film detection value is calculated for all the detection positions, the connection portion 10 may be moved by the moving portion 20 so as to change N detection positions preset on the oxide semiconductor thin film until the thin film detection value is calculated for all the detection positions. Therefore, the oxide semiconductor thin film inspection method of the present invention can obtain the thin film inspection value of the oxide semiconductor thin film for each inspection position, and thus, it is helpful to make an accurate evaluation criterion for the oxide semiconductor thin film, such as uniformity of the oxide semiconductor thin film.
Referring to fig. 1 to 8, the oxide semiconductor thin film inspection method of the present invention may include a step of inspecting the oxide semiconductor thin film a second time (S200). The step of inspecting the oxide semiconductor thin film for the second time (S200) may be performed after the step of inspecting the oxide semiconductor thin film for the first time (S100) is performed. The step (S200) of detecting the oxide semiconductor thin film for the second time may be performed using an applied voltage when the thin-film voltage is obtained in the step (S100) of detecting the oxide semiconductor thin film for the first time. For this reason, in the step of first inspecting the oxide semiconductor thin film (S100), the step of obtaining a thin film extraction value (S140) may include a step of extracting an applied voltage (S142). In the step of extracting the applied voltage (S142), the applied voltage at the time of obtaining the thin film voltage may be extracted by the obtaining part 5. The step of extracting the applied voltage (S142) may also be performed by the third measuring instrument 53.
The step of secondarily inspecting the oxide semiconductor thin film (S200) may include the following steps.
First, a reference voltage is set (S210). In this step (S210), the applied voltage at the time of obtaining the thin film voltage may be set as the reference voltage. The applied voltage at the time of obtaining the thin film voltage may be extracted by the step of extracting the applied voltage (S142). The step of setting the reference voltage (S210) may be performed by the control unit 6.
Then, a reference voltage of a waveform is generated (S220). In this step (S210), a reference voltage having a waveform in which positive and negative voltages are alternately repeated may be generated using the reference voltage. In the step (S220) of generating the reference voltage of the waveform, when the voltage generation unit 2 generates the reference voltage, the waveform generation unit 8 generates the reference voltage of the waveform using the reference voltage.
Then, a film voltage of a waveform is obtained (S230). In this step (S230), when the reference voltage of the waveform is applied to the oxide semiconductor through the resistance portion 4, the film voltage of the waveform of the oxide semiconductor thin film is obtained. The step of obtaining the sheet voltage of the waveform (S230) may be performed by the obtaining part 5. The step of obtaining the sheet voltage of the waveform (S230) may also be performed by the first measuring instrument 51.
Then, a level value is obtained (S240). In this step (S240), the level value is calculated using a first area value corresponding to a positive voltage in the waveform of the thin-film voltage and a second area value corresponding to a negative voltage in the waveform of the thin-film voltage. Therefore, the oxide semiconductor thin film detection method of the present invention contributes to making more various evaluation criteria for the oxide semiconductor thin film by the level value. In the obtaining of the level value (S240), the level value may be obtained through an operation of subtracting the second area value from the first area value. The step of obtaining the level value (S240) may be performed by the control part 6.
The step (S200) of detecting the oxide semiconductor film for the second time may be performed by generating a reference voltage having a waveform corresponding to a positive voltage and a reference voltage corresponding to a negative voltage, respectively, and performing the second detection on the oxide semiconductor film. At this time, the step of generating the reference voltage of the waveform (S220), the step of obtaining the thin film voltage of the waveform (S230), and the step of obtaining the level value (S240) may be completed as follows.
First, in the step (S220) of generating the reference voltage of the waveform, the reference voltage of the waveform corresponding to the positive voltage is generated using the reference voltage, and the reference voltage of the waveform corresponding to the negative voltage is generated using the reference voltage.
Then, in the step of obtaining the thin-film voltage of the waveform (S230), when the reference voltage of the waveform corresponding to the positive voltage is applied to the oxide semiconductor through the resistance portion 4, the thin-film voltage of the waveform corresponding to the positive voltage may be obtained for the oxide semiconductor thin film. In the step of obtaining the thin-film voltage of the waveform (S230), when the reference voltage of the waveform corresponding to the negative voltage is applied to the oxide semiconductor through the resistance portion 4, the thin-film voltage of the waveform corresponding to the negative voltage may be obtained for the oxide semiconductor thin film.
Then, in the step (S240) of obtaining the level value, the level value is calculated using a first area value corresponding to a positive voltage obtained from the thin-film voltage of the waveform corresponding to the positive voltage and a second area value corresponding to a negative voltage obtained from the thin-film voltage of the waveform corresponding to the negative voltage. Therefore, the oxide semiconductor thin film detection method of the present invention contributes to making more various evaluation criteria for the oxide semiconductor thin film by the level value.
Referring to fig. 1 to 8, when the thin film detection value based on the applied voltage composed of the positive voltage and the thin film detection value based on the applied voltage composed of the negative voltage are obtained through the first detecting of the oxide semiconductor thin film step (S100), the applied voltage at the time of obtaining the thin film voltage based on the applied voltage composed of the positive voltage is used as the reference voltage in the second detecting of the oxide semiconductor thin film step (S200). At this time, in the step of setting the reference voltage (S210), an applied voltage when the thin film voltage is obtained based on an applied voltage consisting of a positive voltage may be set as the reference voltage. In the step of extracting an applied voltage (S142) in the step of first detecting an oxide semiconductor thin film (S100), an applied voltage when a thin film voltage is obtained based on an applied voltage composed of a positive voltage may be extracted.
Referring to fig. 1 to 8, the step of secondarily inspecting the oxide semiconductor thin film (S200) may be repeatedly performed for N inspection positions preset on the oxide semiconductor thin film until the level value is obtained at all the inspection positions. At this time, the connection portion may be moved by the moving portion 20 so as to change the detection positions for N detection positions preset on the oxide semiconductor thin film until the level value is calculated at all the detection positions. Therefore, the oxide semiconductor thin film inspection method of the present invention can obtain the level value of the oxide semiconductor thin film for each inspection position, and thus, it is helpful to make an accurate evaluation criterion for the oxide semiconductor thin film, such as uniformity of the oxide semiconductor thin film.
Referring to fig. 1 to 9, the oxide semiconductor inspection method of the present invention may include the step of obtaining a substrate inspection value (S300). In the step (S300) of obtaining a substrate inspection value, a substrate on which the oxide semiconductor thin film is not formed may be inspected to obtain the substrate inspection value. When the first inspection of the oxide semiconductor thin film is performed on the oxide semiconductor thin film formed on the substrate formed of silicon such as a silicon wafer (S100), the substrate inspection value is obtained in a state where the oxide semiconductor thin film is not formed on the corresponding substrate in the obtaining of the substrate inspection value (S300). The step of obtaining a substrate detection value (S300) may include the following steps.
First, a detection resistance is set (S310). In this step (S310), a detection resistance for detecting the substrate may be set. The step of setting the detection resistance (S310) may be performed by the resistance part 4.
Then, the detection voltage is applied (S320). In this step (S320), a detection voltage for detecting the substrate may be applied. The detection voltage is generated by the voltage generation section 2, and is changed between the initial value and the detection value by the voltage change section 3. In this way, a detection voltage that changes between the initial detection value and the maximum detection value can be applied to the resistance portion 4 and applied to the substrate via the detection resistance.
Then, it is determined whether a substrate voltage is obtained (S330). In this step (S330), it is determined whether or not the substrate voltage of the substrate is obtained while the detection voltage is changed from the initial detection value to the maximum detection value and applied to the substrate through the detection resistance. The step of determining whether or not the substrate voltage is obtained (S330) may be performed by the obtaining part 5. The step of determining whether or not the substrate voltage is obtained (S330) may be performed by the control unit 6. At this time, the control section 6 may determine whether or not the substrate voltage is obtained when receiving the substrate voltage from the obtaining section 5.
Then, when the substrate voltage is obtained, a substrate extraction value is obtained (S340). In this step (S340), a value for detecting an electrical characteristic of the substrate may be extracted when the substrate voltage is obtained. The step of obtaining a substrate extraction value (S340) may be performed by the obtaining unit 5. The step of obtaining the substrate extraction value (S340) may include the step of extracting a detection resistance voltage (S341). In the step of extracting the detection resistance voltage (S341), the detection resistance voltage applied to the detection resistance when the substrate voltage is obtained may be extracted by the obtaining part 5. The step of extracting the detection resistance voltage (S341) may be performed by the second measuring instrument 52.
Then, a substrate current and a substrate resistance are obtained (S350). In this step (S350), a substrate detection value including the substrate current and the substrate resistance may be obtained. The step of obtaining the substrate current and the substrate resistance (S350) may be performed by the control part 6. The step of obtaining the substrate current and the substrate resistance (S350) may include a step of calculating the substrate current (S351) and a step of calculating the substrate resistance (S352).
In the step of calculating the substrate current (S351), the substrate current may be calculated using the detected resistance voltage extracted in the step of extracting the detected resistance voltage (S341) and the detected resistance when the substrate voltage is obtained. The step of calculating the substrate current (S351) may be performed by the control unit 6. The control unit 6 may calculate the substrate current by an operation of dividing the detection resistance voltage by the detection resistance.
In the step of calculating the substrate resistance (S352), the substrate resistance may be calculated using the substrate current and the substrate voltage calculated in the step of calculating the substrate current (S351). The step of calculating the substrate resistance (S352) may be performed by the control unit 6. The control unit 6 may calculate the substrate resistance by dividing the substrate voltage by the substrate current.
Then, substrate inspection is performed again (S350). In this step (S350), when the substrate voltage is not obtained, the step of setting the detection resistance (S310), the step of applying the detection voltage (S320), and the step of determining whether the substrate voltage is obtained (S330) may be performed after the detection resistance is changed. The step of re-performing the substrate inspection (S350) may be repeatedly performed while changing the inspection resistance until the substrate voltage is obtained.
Referring to fig. 1 to 9, the oxide semiconductor inspection method of the present invention may include the step of obtaining a corrected inspection value (S400). The step of obtaining a corrected inspection value (S400) may be performed after the step of obtaining a substrate inspection value (S300) and the step of first inspecting the oxide semiconductor thin film (S100) are performed.
In the step of obtaining a corrected inspection value (S400), the substrate inspection value obtained in the step of obtaining a substrate inspection value (S400) may be subtracted from the film inspection value obtained in the step of first inspecting the oxide semiconductor thin film (S100) to obtain the corrected inspection value. Thereby, even if the step (S100) of first inspecting the oxide semiconductor thin film is performed in a state where the oxide semiconductor thin film is formed on the substrate, the oxide semiconductor thin film inspection method of the present invention can exclude the influence of the substrate on the inspection result of the oxide semiconductor thin film itself. Therefore, the oxide semiconductor film detection method provided by the invention is beneficial to further improving the accuracy of the detection result of the oxide semiconductor film.
In the step (S400) of obtaining a corrected inspection value, a value associated with each other of the film inspection value and the substrate inspection value is calculated to obtain the corrected inspection value. For example, the step (S400) of obtaining the correction detection value may obtain the correction value of the applied voltage when the thin film voltage is obtained by subtracting the detection voltage when the substrate voltage is obtained from the applied voltage when the thin film voltage is obtained. For example, in the step (S400) of obtaining the correction detection value, the substrate resistance may be subtracted from the sheet resistance by subtracting the substrate current from the sheet voltage and subtracting the substrate voltage from the sheet current. In this way, in the step (S400) of obtaining the corrected detection value, the corrected value of the sheet voltage, the corrected value of the sheet current, and the corrected value of the sheet resistance can be obtained. The step of obtaining the correction detection value (S400) may be performed by the control unit 6.
Wherein the step of obtaining substrate inspection values (S300) is repeatedly performed for N inspection positions preset on the substrate until the substrate inspection values are calculated at all the inspection positions. For example, the step of obtaining substrate detection values (S300) may be repeatedly performed for N detection positions preset on the substrate until the substrate resistance is calculated at all the detection positions. When the step of obtaining the substrate inspection values is repeatedly performed for the inspection positions (S300) until the substrate inspection values are calculated at all the inspection positions, the connection part 10 may be moved by the moving part 20 so as to change N inspection positions preset on the substrate until the substrate inspection values are calculated at all the inspection positions. Therefore, the oxide semiconductor thin film detection method of the present invention can obtain the substrate detection value of the substrate for each detection position, and thus, it is helpful to make an accurate evaluation criterion for the substrate, such as uniformity of the substrate.
In this case, in the step (S300) of obtaining the substrate inspection value, when the substrate inspection value is obtained at all the inspection positions, the step of obtaining the correction inspection value may obtain the correction inspection value at each of the inspection positions by performing an operation of subtracting the substrate inspection value from the thin film inspection value at each of the inspection positions.
Wherein the step of obtaining a substrate detection value (S300) may obtain the substrate detection value by a detection voltage based on a positive voltage. At this time, in the step of applying the detection voltage (S320), a detection voltage composed of a positive voltage may be applied. In this step (S320), as the switch unit 7 converts the detection voltage applied from the voltage generation unit 2 into a detection voltage having a positive voltage, a voltage having a positive voltage may be applied to the substrate. In the step of obtaining the substrate current and the substrate resistance (S350), the substrate detection value is obtained by obtaining the substrate detection value based on a detection voltage composed of a positive voltage. In this case, in the step (S351) of calculating the substrate current, the substrate current is calculated based on a detection voltage composed of a positive voltage. In the step (S352) of calculating the substrate resistance, the substrate resistance is calculated based on a detection voltage composed of a positive voltage.
In the step (S300) of obtaining a substrate detection value, the substrate detection value may be obtained by obtaining the substrate detection value based on a detection voltage composed of a positive voltage and then obtaining the substrate detection value based on a detection voltage composed of a negative voltage. At this time, in the step of applying the detection voltage (S320), the detection voltage composed of a negative voltage may be applied. The step (S320) may be performed to apply a voltage of a negative voltage to the substrate as the switch unit 7 changes the detection voltage applied from the voltage generation unit 2 to a detection voltage of a negative voltage. In the step of obtaining the substrate current and the substrate resistance (S350), the substrate detection value is obtained by a detection voltage based on a negative voltage. In this case, in the step of calculating the substrate current (S351), the substrate current may be calculated based on a detection voltage composed of a negative voltage. In the step of calculating the substrate resistance (S352), the substrate resistance may be calculated based on a detection voltage composed of a negative voltage.
When the substrate detection value based on the detection voltage of the positive voltage and the substrate detection value based on the detection voltage of the negative voltage are obtained in the step of obtaining the substrate detection value (S300), the substrate detection value based on the detection voltage of the positive voltage may be subtracted from the thin film detection value based on the applied voltage of the positive voltage in the step of obtaining the corrected detection value (S400), so that the corrected detection value based on the applied voltage of the positive voltage is obtained. In the step (S400) of obtaining the corrected detection value, the substrate detection value based on the detection voltage of the negative voltage is subtracted from the thin film detection value based on the applied voltage of the negative voltage, so that the corrected detection value based on the applied voltage of the negative voltage can be obtained.
The present invention described above is not limited to the above-described embodiments and drawings, and it will be apparent to those skilled in the art that various substitutions, modifications and changes can be made without departing from the technical spirit of the present invention.
Claims (22)
1. An oxide semiconductor film detection method is characterized by comprising the following steps:
setting a measuring resistance for detecting the oxide semiconductor thin film;
applying an applied voltage so that a voltage across the measuring resistor is applied to the oxide semiconductor thin film;
determining whether a film voltage of the oxide semiconductor film is obtained in a process of changing the applied voltage from a preset initial value to a preset maximum value;
extracting a resistance voltage applied to the measuring resistor at the time of obtaining the thin-film voltage, when the thin-film voltage is obtained; and
a thin film current is calculated using the extracted resistance voltage and a resistance for measurement at the time of obtaining the thin film voltage, and a thin film resistance of the oxide semiconductor thin film is calculated using the calculated thin film current and the thin film voltage.
2. The method for inspecting an oxide semiconductor thin film according to claim 1,
when the film voltage is not obtained, after the resistance for measurement is changed, the following steps are executed:
setting the measuring resistance;
applying the applied voltage; and
and judging whether the film voltage is obtained.
3. The method for inspecting an oxide semiconductor thin film according to claim 2,
repeating the re-performing step while changing the resistance for measurement until the thin film voltage is obtained.
4. The method for inspecting an oxide semiconductor thin film according to claim 2,
in the step of applying the applied voltage, after the initial value and the maximum value corresponding to the changed resistance for measurement are extracted when the re-execution step is executed, the applied voltage is changed between the extracted initial value and the maximum value.
5. The method for inspecting an oxide semiconductor thin film according to claim 1, comprising the steps of:
when the sheet voltage is obtained, an applied voltage at the time of obtaining the sheet voltage is extracted and set as a reference voltage.
6. The method for inspecting an oxide semiconductor thin film according to claim 5, comprising the steps of:
generating a reference voltage having a waveform in which positive and negative voltages are alternately repeated, using the reference voltage;
applying the reference voltage of the waveform to the oxide semiconductor thin film and obtaining a film voltage of the waveform of the oxide semiconductor thin film; and
and calculating a level value of the oxide semiconductor thin film by using a first area value corresponding to a positive voltage in the waveform of the thin film voltage and a second area value corresponding to a negative voltage in the waveform of the thin film voltage.
7. The method for inspecting an oxide semiconductor thin film according to claim 5, comprising the steps of:
generating a reference voltage having a waveform corresponding to a positive voltage and generating a reference voltage having a waveform corresponding to a negative voltage, using the reference voltage;
applying a reference voltage of a waveform corresponding to the positive voltage to the oxide semiconductor thin film to obtain a film voltage of a waveform corresponding to the positive voltage of the oxide semiconductor thin film, and applying a reference voltage of a waveform corresponding to the negative voltage to the oxide semiconductor thin film to obtain a film voltage of a waveform corresponding to the negative voltage of the oxide semiconductor thin film; and
the level value of the oxide semiconductor thin film is calculated using a first area value corresponding to a positive voltage obtained from the thin-film voltage of the waveform corresponding to the positive voltage and a second area value corresponding to a negative voltage obtained from the thin-film voltage of the waveform corresponding to the negative voltage.
8. The method for inspecting an oxide semiconductor thin film according to claim 1,
in the step of applying the applied voltage, an applied voltage consisting of a positive voltage is applied,
in the step of calculating the sheet resistance, the sheet resistance is calculated based on an applied voltage consisting of a positive voltage.
9. The method for inspecting an oxide semiconductor thin film according to claim 8,
in the step of applying the applied voltage, the thin film resistance is calculated based on the applied voltage consisting of a positive voltage, and then the applied voltage consisting of a negative voltage is applied,
in the step of calculating the sheet resistance, the sheet resistance is calculated based on an applied voltage consisting of a negative voltage.
10. The method for inspecting an oxide semiconductor thin film according to claim 9, comprising the steps of:
extracting an applied voltage at the time of obtaining the thin film voltage based on the applied voltage composed of a positive voltage and setting as a reference voltage;
generating a reference voltage having a waveform in which positive and negative voltages are alternately repeated, using the reference voltage;
applying the reference voltage of the waveform to the oxide semiconductor thin film and obtaining a film voltage of the waveform of the oxide semiconductor thin film; and
and calculating a level value of the oxide semiconductor thin film by using a first area value corresponding to a positive voltage in the waveform of the thin film voltage and a second area value corresponding to a negative voltage in the waveform of the thin film voltage.
11. The method for inspecting an oxide semiconductor thin film according to claim 1, comprising the steps of:
detecting a substrate on which the oxide semiconductor thin film is not formed to obtain a substrate detection value of the substrate; and
the substrate detection value is subtracted from a thin film detection value obtained by the step of calculating the measurement resistance, the step of applying the applied voltage, the step of determining whether or not the thin film resistance is obtained, the step of extracting the resistance voltage, and the step of calculating the thin film resistance, to obtain a corrected detection value for the thin film detection value.
12. The method for inspecting an oxide semiconductor thin film according to claim 11,
the step of obtaining the substrate detection value comprises the following steps:
setting a detection resistor for detecting the substrate;
applying a detection voltage so that a voltage across the detection resistor is applied to the substrate;
determining whether a substrate voltage of the substrate is obtained in a process of changing the detection voltage from a preset initial detection value to a preset maximum detection value;
extracting a detection resistance voltage applied to the detection resistance when the substrate voltage is obtained, in a case where the substrate voltage is obtained;
calculating a substrate current using the extracted detection resistance voltage and a detection resistance at the time of obtaining the substrate voltage, and calculating a substrate resistance of the substrate using the calculated substrate current and the substrate voltage; and
when the substrate voltage is not obtained, after changing the detection resistance, the step of setting the detection resistance, the step of applying the detection voltage, and the step of determining whether the substrate voltage is obtained are repeatedly performed until the substrate voltage is obtained.
13. The method for inspecting an oxide semiconductor thin film according to claim 1,
the step of setting the resistance for measurement, the step of applying the applied voltage, the step of determining whether or not the thin-film voltage is obtained, the step of extracting the resistance voltage, and the step of calculating the thin-film resistance are repeatedly performed for N detection positions preset on the oxide semiconductor thin film until the thin-film resistance is calculated at all the detection positions, where N is an integer greater than 1.
14. An oxide semiconductor thin film inspection apparatus, comprising:
the connecting part is used for connecting an object to be detected;
a voltage generating section that generates an applied voltage for detecting the oxide semiconductor thin film when the connection section is connected to the oxide semiconductor thin film corresponding to the object to be detected;
a voltage changing part that changes the applied voltage generated by the voltage generating part between a preset initial value and a preset maximum value;
resistance sections connected to the connection section and the voltage generation section, respectively, for setting a resistance for measurement so that the applied voltage changed by the voltage change section is applied to the oxide semiconductor thin film through the resistance for measurement;
an obtaining section that obtains a film voltage of the oxide semiconductor thin film depending on whether or not a voltage of the oxide semiconductor thin film is measured; and
and a control unit that calculates a thin-film current using a resistance voltage applied to the measuring resistor when the thin-film voltage is obtained and a measuring resistor when the thin-film voltage is obtained, and then calculates a thin-film resistance of the oxide semiconductor thin film using the calculated thin-film current and the thin-film voltage, when the thin-film voltage is obtained by the obtaining unit.
15. The oxide semiconductor thin film inspection device according to claim 14,
the resistance portion changes the resistance for measurement in a case where the thin-film voltage is not obtained even by changing the applied voltage to the maximum value,
the voltage changing unit increases the applied voltage from the initial value when changing the measurement resistance.
16. The oxide semiconductor thin film inspection device according to claim 14,
the resistance portion changes the resistance for measurement in a case where the thin-film voltage is not obtained even by changing the applied voltage to the maximum value,
when changing the resistance for measurement, the voltage changing section extracts the initial value and the maximum value corresponding to the changed resistance for measurement, and then changes the applied voltage between the extracted initial value and the maximum value.
17. The oxide semiconductor thin film inspection device according to claim 14,
a waveform generating section connected between the voltage generating section and the resistance section for generating a reference voltage having a waveform in which a positive voltage and a negative voltage are alternately repeated by an applied voltage at the time of obtaining the thin-film voltage when obtaining the thin-film voltage,
the obtaining section obtains a film voltage of a waveform of the oxide semiconductor thin film when the reference voltage of the waveform is applied to the oxide semiconductor thin film,
the control unit calculates a level value of the oxide semiconductor thin film by using a first area value corresponding to a positive voltage in the waveform of the thin film voltage and a second area value corresponding to a negative voltage in the waveform of the thin film voltage.
18. The oxide semiconductor thin film inspection device according to claim 14,
a waveform generating section connected between the voltage generating section and the resistance section for generating a reference voltage having a waveform corresponding to a positive voltage and a reference voltage having a waveform corresponding to a negative voltage by using an applied voltage at the time of obtaining the thin-film voltage when obtaining the thin-film voltage,
the obtaining portion obtains a film voltage of the oxide semiconductor thin film of a waveform corresponding to the positive voltage when a reference voltage of a waveform corresponding to the positive voltage is applied to the oxide semiconductor thin film, and obtains a film voltage of the oxide semiconductor thin film of a waveform corresponding to the negative voltage when a reference voltage of a waveform corresponding to the negative voltage is applied to the oxide semiconductor thin film,
the control unit calculates a level value of the oxide semiconductor thin film by using a first area value corresponding to a positive voltage obtained from a thin film voltage having a waveform corresponding to the positive voltage and a second area value corresponding to a negative voltage obtained from a thin film voltage having a waveform corresponding to the negative voltage.
19. The oxide semiconductor thin film inspection device according to claim 14,
comprises a switch part which is arranged between the voltage generating part and the resistance part and is respectively connected with the voltage generating part and the resistance part,
the switching unit converts the applied voltage applied from the voltage generating unit into an applied voltage of a positive voltage or an applied voltage of a negative voltage.
20. The oxide semiconductor thin film inspection device according to claim 14,
when the object to be detected is a substrate on which the oxide semiconductor thin film is not formed, the connecting part is connected to the substrate,
the voltage generating section generates a detection voltage for detecting the substrate when the connection section is connected to the substrate on which the oxide semiconductor thin film is not formed,
the voltage changing portion changes the detection voltage generated by the voltage generating portion from a preset initial detection value to a preset maximum detection value,
the resistance section sets the detection resistance so that the detection voltage changed by the voltage changing section is applied to the substrate after passing through the detection resistance,
the obtaining part obtains the substrate voltage of the substrate according to whether the substrate measures the voltage or not,
when the substrate voltage is obtained by the obtaining unit, the control unit calculates a substrate current using a detection resistance voltage applied to the detection resistance when the substrate voltage is obtained and a detection resistance when the substrate voltage is obtained, and then calculates a substrate resistance of the substrate using the calculated substrate current and the substrate voltage.
21. The oxide semiconductor thin film inspection device according to claim 20,
the control unit obtains a corrected detection value of the thin film detection value by subtracting a substrate detection value obtained in a state where the connection unit is connected to a substrate on which the oxide semiconductor thin film is not formed, from the thin film detection value obtained in a state where the connection unit is connected to the oxide semiconductor thin film.
22. The oxide semiconductor thin film inspection device according to claim 14,
comprises a moving part for moving the connecting part,
the moving section moves the connecting section so as to change a position between N detection positions preset on the oxide semiconductor thin film until the sheet resistance is calculated at all the detection positions, where N is an integer greater than 1.
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