CN111141420A

CN111141420A - Object deep temperature measuring method and device based on heat flow method

Info

Publication number: CN111141420A
Application number: CN202010079828.6A
Authority: CN
Inventors: 朱方方; 苏红宏; 王玉
Original assignee: Shanghai Sensylink Microelectronics Technology Co ltd; Institute of Flexible Electronics Technology of THU Zhejiang
Current assignee: Shanghai Sensylink Microelectronics Technology Co ltd; Institute of Flexible Electronics Technology of THU Zhejiang
Priority date: 2020-02-04
Filing date: 2020-02-04
Publication date: 2020-05-12

Abstract

The application relates to an object deep temperature measuring method and device based on a heat flow method, wherein the lower surface of a temperature sensor is attached to the surface of an object to be measured, the steady-state temperatures of the upper surface and the lower surface of the temperature sensor under different calibration conditions are obtained, or the first steady-state temperatures of the upper surface and the lower surface of the temperature sensor and the deep initial temperature of the object to be measured are obtained under a measuring environment, the ratio of thermal resistances between the object to be measured and the temperature sensor is calibrated according to obtained data, and then the deep temperature of the object to be measured is calculated according to the ratio of the thermal resistances and the latest steady-state temperatures of the upper surface and the lower surface of the temperature sensor under the measuring environment. By the method, self calibration of the thermal resistance ratio between the object to be measured and the temperature sensor can be realized, and the method is convenient to use and wider in application.

Description

Object deep temperature measuring method and device based on heat flow method

Technical Field

The application relates to the technical field of temperature measurement, in particular to a method and a device for measuring the temperature of the deep part of an object based on a heat flow method.

Background

At present, methods for measuring the deep temperature of an object generally include a thermal equilibrium method, a zero heat flow method, a heat flow method and the like. Wherein, the deep temperature measurement based on thermal balance method needs the thermal environment airtight, and deep temperature and the surface temperature that awaits measuring reach thermal balance, can obtain the degree of depth temperature, typically like the measurement of armpit temperature, need the tester to press from both sides tight armpit more than 10 minutes usually, just can obtain human body temperature, in order to reach thermal balance, need construct totally airtight environment usually or stretch into the object with temperature probe inside, be unfavorable for realizing the continuous monitoring of temperature, use is limited. Deep temperature measurement based on the zero heat flow method needs to heat the device temperature to be consistent with the deep position of an object to be measured, and the power consumption is large, so that the application of a portable device is not facilitated. In the traditional deep temperature measurement based on the heat flow method, the thermal parameters of the material of the object to be measured are known or obtained by calibration in advance, and the thermal performance of the material is not interfered by environmental changes, so that the measurement precision is limited on one hand, and on the other hand, the thermal parameter values of the skin are difficult to obtain in application scenes such as human bodies, and the application is limited.

Disclosure of Invention

In order to solve the technical problems, the application provides an object deep temperature measuring method and device based on a heat flow method, which can realize self calibration of specific heat of thermal resistance between an object to be measured and a temperature sensor, is convenient to use and is more widely applied.

In order to solve the technical problem, the present application provides an object deep temperature measurement method based on a heat flow method, including:

step 11: acquiring steady-state temperatures of the upper surface and the lower surface of the temperature sensor under different calibration conditions, wherein the lower surface of the temperature sensor is attached to the surface of an object to be measured;

step 12: calibrating the ratio of thermal resistances between the object to be measured and the temperature sensor according to the acquired steady-state temperature data;

step 13: and under a measuring environment, calculating the deep part temperature of the object to be measured according to the ratio of the thermal resistances and the latest steady-state temperatures of the upper surface and the lower surface of the temperature sensor.

Wherein, the step 11 comprises:

when the calibration condition is that the peripheral space of the temperature sensor is not heated, first steady-state temperatures of the upper surface and the lower surface of the temperature sensor are obtained;

and when the calibration condition is that the peripheral space of the temperature sensor is heated, acquiring second steady-state temperatures of the upper surface and the lower surface of the temperature sensor.

Wherein the step of obtaining a second steady state temperature of the upper surface and the lower surface of the temperature sensor when the calibration condition is to heat the peripheral space of the temperature sensor comprises:

controlling a heating element to work at a preset heating power so as to heat the peripheral space of the temperature sensor;

monitoring the temperature fluctuation value of the upper surface and the temperature fluctuation value of the lower surface of the temperature sensor;

and when the temperature fluctuation value of the upper surface and the temperature fluctuation value of the lower surface of the temperature sensor are both smaller than a second preset threshold value, respectively acquiring the current temperatures of the upper surface and the lower surface of the temperature sensor as second steady-state temperatures.

controlling a heating element to start working so as to heat the peripheral space of the temperature sensor;

adjusting the heating power of the heating element to enable the temperature rise amplitude of the upper surface and/or the lower surface of the temperature sensor to reach a preset amplitude and the temperature fluctuation value to be smaller than a second preset threshold value;

and respectively acquiring the current temperatures of the upper surface and the lower surface of the temperature sensor as second steady-state temperatures.

Wherein, the step 12 comprises:

acquiring first steady-state temperatures of an upper surface and a lower surface of the temperature sensor and second steady-state temperatures of the upper surface and the lower surface of the temperature sensor;

calculating the ratio of the thermal resistances between the object to be measured and the temperature sensor, wherein the calculation formula of the ratio of the thermal resistances is

In the formula, T₁: a first steady state temperature representative of a lower surface of the temperature sensor; t is₂: a first steady state temperature representative of an upper surface of the temperature sensor; t is₁': a second steady state temperature representative of a lower surface of the temperature sensor; t is₂': a second steady state temperature representative of an upper surface of the temperature sensor; rs: representing an equivalent thermal resistance from a lower surface of the temperature sensor to an upper surface of the temperature sensor; rd: and representing the equivalent thermal resistance from the deep part of the object to be measured to the surface of the object to be measured.

Wherein, the step 11 comprises:

when the calibration condition is that the peripheral space of the temperature sensor is closed, acquiring first steady-state temperatures of the upper surface and the lower surface of the temperature sensor;

and when the calibration condition is that the peripheral space of the temperature sensor is open, acquiring second steady-state temperatures of the upper surface and the lower surface of the temperature sensor.

Wherein, the step 12 comprises:

taking the first steady-state temperatures of the upper surface and the lower surface of the temperature sensor as the deep initial temperature of the object to be measured;

acquiring second steady-state temperatures of the upper surface and the lower surface of the temperature sensor;

In the formula, T₁: a first steady state temperature representative of a lower surface of the temperature sensor; t is₂: a first steady state temperature representative of an upper surface of the temperature sensor; t is_d0: representing the deep initial temperature of the object to be measured; t is₁': a second steady state temperature representative of a lower surface of the temperature sensor; t is₂': a second steady state temperature representative of an upper surface of the temperature sensor; rs: representing an equivalent thermal resistance from a lower surface of the temperature sensor to an upper surface of the temperature sensor; rd: and representing the equivalent thermal resistance from the deep part of the object to be measured to the surface of the object to be measured.

Wherein, the step 13 comprises:

under a measuring environment, acquiring the latest steady-state temperature of a first preset position of the upper surface, a second preset position of the lower surface and a third preset position of the lower surface of the temperature sensor, wherein the first preset position is positioned right above the second preset position;

calculating the deep temperature of the object to be measured according to the ratio of the thermal resistances and the latest steady-state temperature, wherein the calculation formula of the deep temperature of the object to be measured is

In the formula, T₁": representing the latest steady state temperature at the second preset position; t is₂": representing the latest steady state temperature of the first preset position; t is₃": representing the latest steady state temperature at the third preset position; r_s: representing an equivalent thermal resistance from a lower surface of the temperature sensor to an upper surface of the temperature sensor; r_d: representing equivalent thermal resistance from the deep part of the object to be detected to the surface of the object to be detected; k: and the surface heat dissipation coefficient of the object to be measured is represented as a constant.

Wherein, after the step 13, the method further comprises:

accumulating the measurement time;

and when the measuring time length reaches the preset time length, returning to the step 11 to recalibrate the thermal resistance ratio between the object to be measured and the temperature sensor.

The application also provides a second object deep temperature measurement method based on the heat flow method, which comprises the following steps:

step 21: under a measuring environment, acquiring first steady-state temperatures of the upper surface and the lower surface of the temperature sensor and a deep initial temperature of an object to be measured, wherein the lower surface of the temperature sensor is attached to the surface of the object to be measured;

step 22: calibrating the ratio of thermal resistances between the object to be measured and the temperature sensor according to the first steady-state temperature data and the deep initial temperature;

step 23: and calculating the deep part temperature of the object to be measured according to the ratio of the thermal resistances and the latest steady-state temperatures of the upper surface and the lower surface of the temperature sensor.

Wherein the step 21 comprises:

and acquiring the deep initial temperature of the object to be detected sent by external equipment through wired and/or wireless connection.

Wherein, the step 23 comprises:

acquiring the latest steady-state temperature of a first preset position of the upper surface, a second preset position of the lower surface and a third preset position of the lower surface of the temperature sensor, wherein the first preset position is positioned right above the second preset position;

Wherein, after the step 23, the method further comprises:

accumulating the measurement time;

when the measuring time length reaches a preset time length, acquiring the current steady-state temperatures of the upper surface and the lower surface of the temperature sensor as the updated first steady-state temperature, and acquiring the deep part current temperature of the object to be measured as the updated deep part initial temperature;

and returning to the step 21 to recalibrate the ratio of the thermal resistances between the object to be measured and the temperature sensor.

The application also provides a third object deep temperature measuring method based on the heat flow method, which comprises the following steps:

step 31: acquiring steady-state temperatures of a first preset position of an upper surface, a second preset position of a lower surface and a third preset position of the lower surface of a temperature sensor under at least three different calibration conditions, wherein the lower surface of the temperature sensor is attached to the surface of an object to be measured, and the first preset position is located right above the second preset position;

step 32: calibrating the surface heat dissipation coefficient of the object to be measured and the ratio of the thermal resistance between the object to be measured and the temperature sensor according to the acquired steady-state temperature data;

step 33: and under a measuring environment, calculating the deep temperature of the object to be measured according to the ratio of the thermal resistances, the surface heat dissipation coefficient and the latest steady-state temperatures of the first preset position, the second preset position and the third preset position.

Wherein, the step 31 comprises:

when the calibration condition is that the peripheral space of the temperature sensor is not heated, acquiring first steady-state temperatures of a first preset position of the upper surface, a second preset position of the lower surface and a third preset position of the lower surface of the temperature sensor;

when the calibration condition is that the peripheral space of the temperature sensor is heated by first preset power, acquiring second steady-state temperatures of a first preset position of the upper surface, a second preset position of the lower surface and a third preset position of the lower surface of the temperature sensor;

and when the calibration condition is that the peripheral space of the temperature sensor is heated by second preset power, acquiring third steady-state temperatures of a first preset position of the upper surface, a second preset position of the lower surface and a third preset position of the lower surface of the temperature sensor.

Wherein the step 32 includes:

obtaining a first equation according to the first steady-state temperatures of the first preset position, the second preset position and the third preset position:

in the formula, T₁: a first steady state temperature representative of the second preset position; t is₂: a first steady state temperature representative of the first preset position; t is₃: a first steady state temperature representative of the third predetermined location; r_s: representing an equivalent thermal resistance from a lower surface of the temperature sensor to an upper surface of the temperature sensor; r_d: representing equivalent thermal resistance from the deep part of the object to be detected to the surface of the object to be detected; k: representing the surface heat dissipation coefficient of the object to be measured;

obtaining a second equation according to the first preset position, the second preset position and a second steady-state temperature of the second preset position:

in the formula, T₁₂: a second steady state temperature representative of the second preset position; t is₂₂: a second steady state temperature representative of the first preset position; t is₃₂: a second steady state temperature representative of the third predetermined location;

obtaining a third equation according to the first preset position, the second preset position and a third steady-state temperature of the second preset position:

in the formula, T₁₃: a third steady state temperature representative of the second preset position; t is₂₃: a third steady state temperature representative of the first preset position; t is₃₃: a third steady state temperature representative of the third preset position;

and obtaining the surface heat dissipation coefficient of the object to be measured and the ratio of the thermal resistance between the object to be measured and the temperature sensor according to the first equation, the second equation and the third equation.

The application also provides an object deep temperature measuring device based on heat flow method, includes:

the temperature sensor comprises an upper surface and a lower surface, the upper surface and the lower surface are respectively provided with a temperature measuring component, and the lower surface of the temperature sensor is used for being attached to the surface of an object to be measured;

the heating element is arranged in the peripheral space of the temperature sensor and used for constructing different calibration conditions;

a processor for performing a first thermal flow method based deep object temperature measurement method as described above.

The object deep temperature measuring device based on the heat flow method comprises a cover body, wherein the cover body is used for accommodating the heating element and the temperature sensor to construct a closed peripheral space.

Wherein, the first preset position of upper surface is equipped with a temperature measurement subassembly, the second preset position and the third preset position of lower surface are equipped with a temperature measurement subassembly respectively, first preset position is located directly over the second preset position, the treater is used for:

The application also provides a second object deep temperature measuring device based on the heat flow method, including:

a processor for performing a first thermal flow method based deep object temperature measurement method as described.

In a second object deep temperature measuring device based on a heat flow method, a first preset position of the upper surface is provided with a temperature measuring component, a second preset position and a third preset position of the lower surface are respectively provided with a temperature measuring component, the first preset position is located right above the second preset position, and the processor is used for:

The application also provides a third object deep temperature measuring device based on a heat flow method, which comprises:

the external data acquisition interface is used for acquiring the deep initial temperature of the object to be detected, which is sent by external equipment;

a processor for performing a second thermal flow method-based object deep temperature measurement method as described above.

In the third object deep temperature measuring device based on the heat flow method, a first preset position of the upper surface is provided with a temperature measuring component, a second preset position and a third preset position of the lower surface are respectively provided with a temperature measuring component, the first preset position is located right above the second preset position, and the processor is used for:

The application still provides fourth object deep temperature measuring device based on heat flow method, includes:

the temperature sensor comprises an upper surface and a lower surface, a temperature measuring component is arranged at a first preset position of the upper surface, temperature measuring components are respectively arranged at a second preset position and a third preset position of the lower surface, and the lower surface of the temperature sensor is used for being attached to the surface of an object to be measured;

the heating element is arranged in the peripheral space of the temperature sensor and used for constructing at least three different calibration conditions;

a processor for executing the third thermal flow method-based object deep temperature measurement method as described above.

The present application further provides a computer storage medium having computer program instructions stored thereon; the computer program instructions, when executed by a processor, implement the first, second and third thermal flow method-based object deep temperature measurement methods described above.

According to the object deep temperature measuring method and device based on the heat flow method and the computer storage medium, the lower surface of the temperature sensor is attached to the surface of an object to be measured, the steady-state temperatures of the upper surface and the lower surface of the temperature sensor under different calibration conditions are obtained, or the first steady-state temperatures of the upper surface and the lower surface of the temperature sensor and the deep initial temperature of the object to be measured are obtained under the measuring environment, the ratio of the thermal resistances between the object to be measured and the temperature sensor is calibrated according to the obtained data, and then the deep temperature of the object to be measured is calculated according to the ratio of the thermal resistances and the latest steady-state temperatures of the upper surface and the lower surface of the temperature sensor under the measuring environment. By the method, self calibration of the thermal resistance ratio between the object to be measured and the temperature sensor can be realized, and the method is convenient to use and wider in application.

Drawings

FIG. 1 is a schematic diagram of the temperature measurement principle of the heat flow method;

fig. 2 is a schematic structural diagram of an object deep temperature measurement device based on a heat flow method according to a first embodiment;

fig. 3 is a schematic view of an application scenario of the object deep temperature measurement device based on the heat flow method according to the first embodiment;

FIG. 4 is a schematic diagram of an application scenario of an object deep temperature measurement device based on a heat flow method according to a second embodiment;

fig. 5 is a schematic structural view of an object deep temperature measurement device based on a heat flow method according to a third embodiment;

fig. 6 is a schematic view of an application scenario of an object deep temperature measurement device based on a heat flow method according to a third embodiment;

fig. 7 is a schematic structural diagram of an object deep temperature measurement device based on a heat flow method according to a fourth embodiment;

fig. 8 is a schematic view of an application scenario of an object deep temperature measurement device based on a heat flow method according to a fourth embodiment;

fig. 9 is a schematic view of an application scenario of the object deep temperature measurement device based on the heat flow method according to the fifth embodiment;

fig. 10 is a schematic structural view of an object deep temperature measurement apparatus based on a heat flow method according to a sixth embodiment;

fig. 11 is a schematic view of an application scenario of an object deep temperature measurement device based on a heat flow method according to a sixth embodiment;

fig. 12 is a schematic flow chart of a method for measuring the temperature of a deep portion of an object based on a heat flow method according to a seventh embodiment;

fig. 13 is a flowchart illustrating a method for measuring the temperature of the deep portion of the object based on the heat flow method according to the eighth embodiment.

Fig. 14 is a flowchart illustrating a method of measuring a temperature at a deep portion of an object based on a heat flow method according to a ninth embodiment.

Detailed Description

The following description of the embodiments of the present application is provided for illustrative purposes, and other advantages and capabilities of the present application will become apparent to those skilled in the art from the present disclosure.

In the following description, reference is made to the accompanying drawings that describe several embodiments of the application. It is to be understood that other embodiments may be utilized and that mechanical, structural, electrical, and operational changes may be made without departing from the spirit and scope of the present application. The following detailed description is not to be taken in a limiting sense, and the scope of embodiments of the present application is defined only by the claims of the issued patent. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

Although the terms first, second, etc. may be used herein to describe various elements in some instances, these elements should not be limited by these terms. These terms are only used to distinguish one element from another.

Also, as used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context indicates otherwise. It will be further understood that the terms "comprises," "comprising," "includes" and/or "including," when used in this specification, specify the presence of stated features, steps, operations, elements, components, items, species, and/or groups, but do not preclude the presence, or addition of one or more other features, steps, operations, elements, components, species, and/or groups thereof. The terms "or" and/or "as used herein are to be construed as inclusive or meaning any one or any combination. Thus, "A, B or C" or "A, B and/or C" means "any of the following: a; b; c; a and B; a and C; b and C; A. b and C ". An exception to this definition will occur only when a combination of elements, functions, steps or operations are inherently mutually exclusive in some way.

FIG. 1 is a schematic diagram of the temperature measurement principle of the heat flow method. Referring to fig. 1, an object to be measured 10 has a deep portion 101 with respect to a surface, the deep portion 101 is an interior of the object to be measured 10, and a deep portion temperature T of the object to be measured 10_dThe object 10 to be measured includes, but is not limited to, a human body, a large-scale device, or an object requiring deep temperature measurement, such as a high-voltage power line. The temperature sensor 207 is attached to the surface of the object 10 to be measured, according to the second law of thermodynamics, heat is spontaneously conducted from a high temperature to a low temperature, when the deep temperature of the object 10 to be measured is consistent with the ambient temperature, the temperature measured by the temperature sensor 207 is the deep temperature of the object 10 to be measured, and when the deep temperature of the object 10 to be measured is inconsistent with the ambient temperature, heat flows exist from the deep portion 101 of the object 10 to be measured to the surface of the object 10 to be measured and the upper and lower surfaces of the temperature sensor 207. Assuming that the deep temperature of the object 10 is higher than the ambient temperature, the heat flows from the object 10 to the temperature sensor 207 and flows through the temperature sensor 207, and after a certain time, the object 10 and the temperature sensor 207 reach thermal equilibrium. Assuming no heat source is present in the test system and the deep temperature is constant, the temperature distribution in the object to be tested 10 and the temperature sensor 207 reaching thermal equilibrium is as follows (1):

when the temperature sensor 207 is large enough, the heat flows in the X direction and the Y direction can be ignored, and only the heat flow in the Z direction is considered, so that the problem of one-dimensional heat conduction without a heat source in a steady state can be simplified, and the simplified temperature distribution is as follows:

equation (2) shows that the heat flux density is constant in the transport direction in the case of steady-state, energy-free, one-dimensional heat conduction. Taking into account the heat flow phi transmitted from the deep part 101 of the object 10 to be measured to the surface₁From the first class of boundary conditions: t-_Z＝0＝T_d，

Equation (2) can be solved to obtain:

in the formula I₁Is the depth 101 to surface thickness of the object 10 to be measured; t is_dIs a deep constant temperature; t is₁Is the surface temperature of the object 10 to be measured; t is [0, l ] in the Z direction₁]The temperature distribution of (1).

Heat transfer heat density q in the Z direction according to Fourier's law of heat transfer_ZAnd heat flow phi₁The following can be described:

in the formula, q_ZIs the heat flow density in the Z direction (w/m)²)；λ_dIs the thermal conductivity (w/(m · K)) of the object to be measured 10; r_dIs defined as area A and thickness l₁The constant temperature deep portion 101 of the object 10 to be measured to the surface of the object 10 to be measured.

Similarly, consider the heat flow Φ passing from the surface of the object 10 to be measured to the upper surface of the temperature sensor 207₂From the first class of boundary conditions:

can be pushed out:

in the formula, q_zIs the heat flow density in the Z direction (w/m)²)；λ_sIs the thermal conductivity (w/(m · K)) of the temperature sensor 207; r_sIs defined as area A and thickness l₂-l₁The equivalent thermal resistance, T, from the lower surface to the upper surface of the temperature sensor 207₂、T₁The temperatures of the upper and lower surfaces of the temperature sensor 207, respectively.

Due to reaching steady state,. phi₁＝Φ₂The combined type (4) and the formula (5) can obtain:

thus, it is possible to obtain:

thus, the deep temperature T of the object 10 is obtained_dOf a mathematical model of, T₁、T₂Respectively, the temperature measurements, R, on both sides of the temperature sensor 207_d、R_sRespectively are the thermal resistance parameter of the object 10 to be measured and the thermal resistance parameter of the temperature sensor 207, wherein the thermal resistance parameter R of the temperature sensor 207_sThe thermal resistance parameter R of the object 10 to be measured can be obtained in a factory calibration mode_dThe thermal flow method is related to the object 10 to be measured and cannot be obtained in advance, so that the current thermal flow method is only suitable for a measurement scene with known thermal resistance of the object 10 to be measured.

The application provides an object deep temperature measuring method and device based on a heat flow method, which can realize the measurement of the temperature of the object to be measuredSelf-calibration of the thermal resistance ratio between the object 10 and the temperature sensor 207 without knowing the thermal resistance parameter R of the object 10 to be measured_dAnd the thermal resistance parameter R of the temperature sensor 207_sThe specific numerical value is convenient to use and wider in application. The method and the device for measuring the temperature of the deep part of the object based on the heat flow method are described in detail below with reference to specific embodiments.

First embodiment

Fig. 2 is a schematic structural diagram of an object deep temperature measurement device based on a thermal flow method according to a first embodiment. Referring to fig. 2, the device for measuring the temperature of the deep portion of an object based on the thermal flow method of the present embodiment includes a temperature sensor 207, a heating element 205 and a processor 206.

Referring to fig. 2 and 3, the temperature sensor 207 includes a temperature measurement component 208 and a heat insulating material 201, the temperature sensor 207 includes an upper surface and a lower surface, the temperature measurement component 208 is used for detecting the temperatures of the upper surface and the lower surface of the temperature sensor 207, in this embodiment, the temperature measurement component 208 includes a first temperature measurement component 202 and a second temperature measurement component 203, the first temperature measurement component 202 is disposed on the upper surface of the temperature sensor 207, the second temperature measurement component 203 is disposed on the lower surface of the temperature sensor 207, that is, on two sides of the heat insulating material 201, respectively, and the first temperature measurement component 202 is disposed directly above the second temperature measurement component 203. The lower surface of the temperature sensor 207 is used to abut against the surface of the object 10 to be measured, and heat flow is transmitted from the deep portion 101 of the object 10 to the temperature sensor 207.

The heating element 205 is disposed in the peripheral space of the temperature sensor 207, and is configured to operate according to the control signal of the processor 206 to heat the peripheral space of the temperature sensor 207, so as to construct different calibration conditions to achieve different thermal equilibrium conditions, thereby achieving calibration of the thermal resistance ratio between the object 10 to be measured and the temperature sensor 207.

In this embodiment, the object deep temperature measuring apparatus based on the thermal flow method further includes a cover 209, and the cover 209 is configured to accommodate the heating member 205 and the temperature sensor 207 to construct a closed peripheral space, so as to improve the heating efficiency of the heating member 205.

The processor 206 is configured to obtain steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 under different calibration conditions, calibrate a ratio of thermal resistances between the object to be measured 10 and the temperature sensor 207 according to the obtained steady-state temperature data, and then calculate a deep temperature of the object to be measured 10 according to the ratio of the thermal resistances and the latest steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 in a measurement environment, so as to continuously monitor the deep temperature of the object to be measured 10. The measurement environment, that is, the environment where the object 10 to be measured is actually located, may be the same as or different from the environment when the thermal resistance ratio is calibrated.

When the processor 206 obtains the steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 under different calibration conditions, first steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 are obtained under the calibration condition of the peripheral space of the unheated temperature sensor 207, and then second steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 are obtained under the calibration condition of the peripheral space of the heated temperature sensor 207.

Specifically, the temperature sensor 207 is first attached to an appropriate position on the surface of the object 10 to be measured, the heating member 205 is not controlled to operate, and the temperature T of the upper surface of the temperature sensor 207 is measured₂And temperature T of the lower surface₁After waiting for a period of time, when both the temperature fluctuation value (e.g., variance) of the upper surface and the temperature fluctuation value (e.g., variance) of the lower surface of the temperature sensor 207 are smaller than a first predetermined threshold (e.g., 0.05 ℃), a first steady state is obtained, and T at that time is recorded₁、T₂As the first steady state temperature.

Then, the heating member 205 is controlled to operate at a predetermined heating power to heat the space around the temperature sensor 207, the temperature fluctuation value of the upper surface and the temperature fluctuation value of the lower surface of the temperature sensor 207 are monitored, a second steady state is obtained when the temperature fluctuation value (e.g., variance) of the upper surface and the temperature fluctuation value (e.g., variance) of the lower surface of the temperature sensor 207 are both less than a second predetermined threshold (e.g., 0.05 ℃), and the current temperatures T of the upper surface and the lower surface of the temperature sensor 207 at that time are recorded₂'、T₁' asA second steady state temperature.

Then, according to the temperature value T of the two steady states₁、T₂、T₁'、T₂' obtaining the formulae (8) and (9) and obtaining the ratio R of the thermal resistances by combining the formulae (8) and (9)_d/R_sAs shown in formula (10):

continuing the measurement, the heating element 205 may be deactivated, and a new steady-state temperature T may be captured based on fluctuations in the temperature of the upper and lower surfaces of the temperature sensor 207₁"、T₂", the real-time deep temperature of the object 10 to be measured is calculated by the following equation (11):

in this embodiment, a second steady state is constructed by adding heat sources, so as to obtain a new heat balance equation, and realize self-calibration of the thermal resistance ratio. Meanwhile, the heat source only works in the starting stage, and the deep temperature can be calculated through the calibrated thermal resistance ratio in the continuous monitoring stage, so that the power consumption is well reduced.

In practical implementation, when the processor 206 obtains the steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 under different calibration conditions, the processor may also control the heating element 205 not to operate at a fixed power, but control the heating element 205 to operate at a variable power, so as to increase the temperature of the upper surface or the lower surface of the temperature sensor 207 by a fixed value th (for example, by 0.2 ℃), thereby achieving a steady state set by a human, and realizing self-calibration of the thermal resistance ratio. At this time, the first steady-state temperature T is recorded₁、T₂Then, the processor 206 controlsThe heating member 205 is operated at a fixed power to heat the peripheral space of the temperature sensor 207, and after a period of time, the heating power of the heating member 205 is adjusted so that the temperature rise of the upper surface and/or the lower surface of the temperature sensor 207 reaches a preset magnitude (e.g., 0.2 ℃) and the temperature fluctuation value is less than a second preset threshold (e.g., 0.08 ℃). During the heating process, if T₂'-T₂<th, the power of the heating element 205 is increased, whereas if T₂'-T₂>th, the power of the heating element 205 is reduced until the temperature fluctuation value of the upper surface of the temperature sensor 207 satisfies the condition, a second steady state is obtained, and the current temperatures T of the upper surface and the lower surface of the temperature sensor 207 at the moment are recorded₂'、T₁' as the second steady state temperature. It is understood that the power of the heating element 205 may also be adjusted by monitoring the temperature fluctuation value of the lower surface of the temperature sensor 207 during the heating process until the temperature fluctuation value of the lower surface of the temperature sensor 207 satisfies the condition. Then, the real-time deep temperature of the object 10 to be measured is calculated according to the equations (8), (9), (10) and (11), and the calculation process is the same as above and is not described again here.

Further, in order to improve the measurement accuracy, after the deep temperature is measured in the measurement environment, the processor 206 starts to accumulate the measurement time, when the measurement time reaches a preset time, the heating element 205 is controlled to operate according to the required calibration condition, the steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 under different calibration conditions are obtained again, then the ratio of the thermal resistances between the object to be measured 10 and the temperature sensor 207 is calibrated again, and the deep temperature is calculated according to the ratio of the thermal resistances calibrated again, so that the measurement accuracy is higher when the deep temperature is monitored for a long time.

Second embodiment

The main difference between the object deep temperature measuring device based on the heat flow method of the present embodiment and the first embodiment is that the cover 209 shown in fig. 3 is not provided, the heating element 205 heats the microenvironment where the upper surface of the temperature sensor 207 is located, the second stable state is constructed, the self-calibration of the thermal resistance ratio is further realized, and the wearing comfort of the device and the overall size of the sensor can be optimized.

Fig. 4 is a schematic view of an application scenario of the object deep temperature measurement device based on the heat flow method according to the second embodiment. Referring to fig. 4, the device for measuring the temperature of the deep portion of an object based on the thermal flow method of the present embodiment includes a temperature sensor 207, a heating element 205 and a processor (not shown).

The temperature sensor 207 comprises a temperature measurement component 208 and a heat insulating material 201, the temperature sensor 207 comprises an upper surface and a lower surface, the temperature measurement component 208 is used for detecting the temperatures of the upper surface and the lower surface of the temperature sensor 207, in this embodiment, the temperature measurement component 208 comprises a first temperature measurement component 202 and a second temperature measurement component 203, the first temperature measurement component 202 is arranged on the upper surface of the temperature sensor 207, the second temperature measurement component 203 is arranged on the lower surface of the temperature sensor 207, namely, on two sides of the heat insulating material 201 respectively, the first temperature measurement component 202 is arranged right above the second temperature measurement component 203, it can be understood that the number of the temperature measurement components is not limited by this, and only the temperatures of the upper surface and the lower surface of the temperature sensor 207 can be obtained. The lower surface of the temperature sensor 207 is used to abut against the surface of the object 10 to be measured, and heat flow is transmitted from the deep portion 101 of the object 10 to the temperature sensor 207.

The heating element 205 is disposed in the peripheral space of the temperature sensor 207 and near the upper surface of the temperature sensor 207, and is configured to operate according to a control signal of the processor to heat the peripheral space of the temperature sensor 207, especially the microenvironment in which the upper surface of the temperature sensor 207 is located, so as to construct different calibration conditions to achieve different thermal equilibrium conditions, thereby achieving calibration of the thermal resistance ratio between the object 10 to be measured and the temperature sensor 207.

The processor is used for acquiring steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 under different calibration conditions, calibrating a ratio of thermal resistances between the object to be measured 10 and the temperature sensor 207 according to the acquired steady-state temperature data, and then calculating the deep temperature of the object to be measured 10 according to the ratio of the thermal resistances and the latest steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 under a measurement environment, so that the deep temperature of the object to be measured 10 is continuously monitored. The measurement environment, i.e. the actual working environment of the object 10 to be measured, may be the same as or different from the environment when the thermal resistance ratio is calibrated.

The working process of the processor in this embodiment is the same as that of the processor 206 in the first embodiment, and is not described herein again.

Third embodiment

Fig. 5 is a schematic structural diagram of an object deep temperature measurement device based on a heat flow method according to a third embodiment. Referring to fig. 5, the apparatus for measuring the temperature of the deep portion of the object based on the thermal flow method of the present embodiment includes a temperature sensor 207 and a processor 206.

Referring to fig. 5 and 6, the temperature sensor 207 includes a temperature measurement component 208 and a heat insulating material 201, the temperature sensor 207 includes an upper surface and a lower surface, the temperature measurement component 208 is used for detecting the temperatures of the upper surface and the lower surface of the temperature sensor 207, the temperature measurement component 208 includes a first temperature measurement component 202 and a second temperature measurement component 203, the first temperature measurement component 202 is disposed on the upper surface of the temperature sensor 207, the second temperature measurement component 203 is disposed on the lower surface of the temperature sensor 207, that is, on two sides of the heat insulating material 201, respectively, and the first temperature measurement component 202 is disposed right above the second temperature measurement component 203. The lower surface of the temperature sensor 207 is used to abut against the surface of the object 10 to be measured, and heat flow is transmitted from the deep portion 101 of the object 10 to the temperature sensor 207.

In this embodiment, compared to the first and second embodiments, the heating element is removed, and different calibration conditions are established by changing the peripheral space of the temperature sensor 207 to be closed or open, so as to achieve different thermal equilibrium conditions, thereby achieving calibration of the ratio of the thermal resistances between the object 10 to be measured and the temperature sensor 207.

When the processor 206 obtains the steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 under different calibration conditions, the processor obtains first steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 under the calibration condition that the peripheral space of the temperature sensor 207 is closed, and then obtains second steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 under the calibration condition that the peripheral space of the temperature sensor 207 is open.

Specifically, the temperature sensor 207 is first attached to a suitable position on the surface of the object 10 to be measured, a closed environment is constructed, a first steady state can be obtained when both the temperature fluctuation value of the upper surface and the temperature fluctuation value (e.g., variance) of the lower surface of the temperature sensor 207 are smaller than a first preset threshold (e.g., 0.05 ℃), and the T at that time is recorded₁、T₂As the first steady-state temperature, the first steady-state temperature at this time is equal to the deep portion 101 initial temperature T of the object 10 to be measured_d0。

Then, returning to the normal open environment to make the environment, the temperature sensor 207 and the object 10 reach the second thermal equilibrium, and recording the T at the moment₁'、T₂' as the second steady-state temperature, further, the following formula is obtained according to formula (7):

will T₁'、T₂'、T_d0In the formula (12), the ratio R of the thermal resistances was calculated_d/R_s。

Continuing the measurement, a new steady-state temperature T is captured based on the fluctuations in the temperatures of the upper and lower surfaces of the temperature sensor 207₁"、T₂", the real-time deep temperature of the object 10 to be measured is calculated by the equation (11).

In this embodiment, the closed state of the peripheral space of the temperature sensor 207 is changed to construct different stable states, and self-calibration of the thermal resistance ratio can be achieved without a heat source or the assistance of other temperature measuring equipment, so that power consumption is well reduced, and the size of the device can be optimized.

Further, to improve the measurement accuracy, after the deep temperature is measured in the measurement environment, the processor 206 starts to accumulate the measurement time, and when the measurement time reaches a preset time, prompts the user to reconstruct a closed state and an open state of the peripheral space of the temperature sensor 207, such as re-clamping the armpit and releasing, so as to re-acquire the steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 under different calibration conditions, re-calibrate the ratio of the thermal resistances between the object to be measured 10 and the temperature sensor 207, and calculate the deep temperature according to the re-calibrated ratio of the thermal resistances, so that when the deep temperature is monitored for a long time, the measurement accuracy is higher.

Fourth embodiment

Fig. 7 is a schematic structural diagram of an object deep temperature measurement device based on a thermal flow method according to a fourth embodiment. Referring to fig. 7, the device for measuring the temperature of the deep portion of the object based on the thermal flow method of the present embodiment includes a temperature sensor 207, an external data acquisition interface 204, and a processor 206.

Referring to fig. 8, the temperature sensor 207 includes a temperature measurement component 208 and a heat insulating material 201, the temperature sensor 207 includes an upper surface and a lower surface, the temperature measurement component 208 is used for detecting the temperatures of the upper surface and the lower surface of the temperature sensor 207, the temperature measurement component 208 includes a first temperature measurement component 202 and a second temperature measurement component 203, the first temperature measurement component 202 is disposed on the upper surface of the temperature sensor 207, the second temperature measurement component 203 is disposed on the lower surface of the temperature sensor 207, that is, on two sides of the heat insulating material 201, respectively, and the first temperature measurement component 202 is disposed right above the second temperature measurement component 203. The lower surface of the temperature sensor 207 is used to abut against the surface of the object 10 to be measured, and heat flow is transmitted from the deep portion 101 of the object 10 to the temperature sensor 207.

The external data acquisition interface 204 is used for acquiring the deep initial temperature of the object 10 to be measured sent by the external device 30, and the external data acquisition interface 204 is, for example, a wireless communication module or a wired data interface, so that the external device 30 can be connected to acquire data. The external device 30 includes, but is not limited to, a terminal having an input interface, a temperature detecting device for measuring the deep temperature by infrared or intrusion, and the like, wherein after the terminal is connected to the measuring device of the present application through the external data acquiring interface 204, a user can input the deep initial temperature of the object 10 to be measured through the input interface of the terminal and then send the deep initial temperature to the measuring device of the present application, or after the temperature detecting device for measuring the deep temperature by infrared or intrusion is connected to the measuring device of the present application through the external data acquiring interface 204, the measurement result is directly sent to the measuring device of the present application.

The processor 206 is configured to obtain first steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 and a deep initial temperature of the object to be measured 10 in the measurement environment, calibrate a ratio of thermal resistances between the object to be measured 10 and the temperature sensor 207 according to the first steady-state temperature data and the deep initial temperature, and calculate the deep temperature of the object to be measured 10 according to the ratio of the thermal resistances and the latest steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207.

Specifically, the temperature sensor 207 is first attached to a suitable position on the surface of the object 10 to be measured, and the temperature T of the upper surface of the temperature sensor 207 is measured₂And temperature T of the lower surface₁After waiting for a period of time, when both the temperature fluctuation value (e.g., variance) of the upper surface and the temperature fluctuation value (e.g., variance) of the lower surface of the temperature sensor 207 are smaller than a first predetermined threshold (e.g., 0.05 ℃), a first steady state is obtained, and T at that time is recorded₁、T₂As the first steady state temperature. And receiving the deep initial temperature T of the object 10 to be measured sent by the external equipment 30_d0. Furthermore, the following formula is obtained from formula (7):

will T₁、T₂、T_d0Substitution in formula (13), i.e. heat can be calculatedResistance ratio R_d/R_s。

Continuing the measurement, a new steady-state temperature T is captured based on the fluctuations in the temperatures of the upper and lower surfaces of the temperature sensor 207₁'、T₂Based on equation (11), the real-time deep temperature of the object 10 to be measured is calculated.

In this embodiment, the external device 30 directly obtains the deep initial temperature of the object 10 to be measured, and the use is simpler for a scene in which the deep temperature of the object can be synchronously obtained.

Further, in order to improve the measurement accuracy, after the deep temperature is measured in the measurement environment, the processor 206 starts to accumulate the measurement time, and when the measurement time reaches a preset time, the current steady-state temperatures of the upper surface and the lower surface of the temperature sensor 207 are acquired as updated first steady-state temperatures, and the user is prompted to provide the current temperature of the deep part 101 of the object 10 to be measured as an updated deep part initial temperature again, and then the ratio of the thermal resistances between the object 10 to be measured and the temperature sensor 207 is calibrated again, and then the deep part temperature is calculated according to the ratio of the thermal resistances calibrated again, so that when the deep part temperature is monitored for a long time, the measurement accuracy is higher.

Fifth embodiment

Fig. 9 is a schematic view of an application scenario of the object deep temperature measurement device based on the heat flow method according to the fifth embodiment. Referring to fig. 9, the difference between the present embodiment and the first to fourth embodiments is that a third temperature measurement assembly 210 is added, that is, the temperature measurement assembly includes a first temperature measurement assembly 202, a second temperature measurement assembly 203 and the third temperature measurement assembly 210, wherein the first temperature measurement assembly 202 is disposed at a first predetermined position on the upper surface of the temperature sensor 207, the second temperature measurement assembly 203 and the third temperature measurement assembly 210 are disposed at a second predetermined position and a third predetermined position on the lower surface of the temperature sensor 207 at intervals, and the first temperature measurement assembly 202 is disposed right above the second temperature measurement assembly 203. The lower surface of the temperature sensor 207 is used to abut against the surface of the object 10 to be measured, and heat flow is transmitted from the deep portion 101 of the object 10 to the temperature sensor 207.

In practical implementation, according to different calibration methods, the device for measuring the temperature of the deep part of the object based on the thermal flow method in the embodiment may further include a heating element and a cover (not shown, refer to fig. 3), where the cover is used to accommodate the heating element and the temperature sensor 207 to construct a closed peripheral space, so as to improve the heating efficiency of the heating element 205. Alternatively, a heating member may be included without a cover (not shown, refer to fig. 4), so that the micro-environment in which the upper surface of the temperature sensor 207 is located is heated by the heating member 205, thereby configuring a steady state.

After the third temperature measurement component 210 is added, the calibration process of the thermal resistance ratio is still the same as that of the first to fourth embodiments. In contrast, the data measured by the third thermometric assembly 210 is used to correct the core temperature when calculating the core temperature.

When calculating the deep temperature, the processor acquires the latest steady-state temperatures of the first preset position of the upper surface, the second preset position of the lower surface and the third preset position of the lower surface of the temperature sensor 207, and calculates the deep temperature of the object 10 to be measured according to the ratio of the thermal resistances and the latest steady-state temperatures at different positions. Specifically, the deep temperature of the object 10 to be measured is calculated by the following formula:

in the formula, T₁": representing the latest steady state temperature at the second preset position; t is₂": representing the latest steady state temperature of the first preset position; t is₃": indicating the latest steady state temperature at the third preset position; r_s: represents the equivalent thermal resistance from the lower surface of the temperature sensor 207 to the upper surface of the temperature sensor 207; r_d: representing the equivalent thermal resistance from the deep part 101 of the object 10 to be measured to the surface of the object 10 to be measured; k: the surface heat dissipation coefficient of the object 10 to be measured is a constant.

The value k can be directly determined according to the distance between the second temperature measurement component 203 and the third temperature measurement component 210 and the related experimental data, and is a fixed value. When calibrating the thermal resistance ratio, k is default to zero, and the calibration process of the thermal resistance ratio is still the same as that of the first to fourth embodiments, and is not described herein again.

Because the surface of the object 10 to be measured has lateral heat dissipation in most cases, especially for human body, the blood circulation of the human body can promote the lateral heat dissipation, which leads to the measurement device losing a certain precision, therefore, the third temperature measurement component 210 can be introduced to correct the heat dissipation, and improve the measurement precision.

Sixth embodiment

Fig. 10 is a schematic structural diagram of an object deep temperature measurement device based on a heat flow method according to a sixth embodiment. Referring to fig. 10, the device for measuring the temperature of the deep portion of an object based on the thermal flow method of the present embodiment includes a temperature sensor 207, a heating element 205, and a processor 206.

Referring to fig. 10 and 11, the temperature sensor 207 includes a first temperature measurement component 202, a second temperature measurement component 203, a third temperature measurement component 210 and a heat insulating material 201, and the temperature sensor 207 includes an upper surface and a lower surface, wherein the first temperature measurement component 202 is disposed at a first predetermined position on the upper surface of the temperature sensor 207, the second temperature measurement component 203 and the third temperature measurement component 210 are disposed at a second predetermined position and a third predetermined position on the lower surface of the temperature sensor 207 at intervals, and the first temperature measurement component 202 is disposed directly above the second temperature measurement component 203. The lower surface of the temperature sensor 207 is used to abut against the surface of the object 10 to be measured, and heat flow is transmitted from the deep portion 101 of the object 10 to the temperature sensor 207.

In practical implementation, the device for measuring the temperature of the deep part of the object based on the thermal flow method according to this embodiment may further include a cover (not shown, refer to fig. 3), where the cover is used to accommodate the heating element 205 and the temperature sensor 207 to form a closed peripheral space, so as to improve the heating efficiency of the heating element 205.

The processor 206 is configured to obtain steady-state temperatures of a first preset position on the upper surface, a second preset position on the lower surface, and a third preset position on the lower surface of the temperature sensor 207 under at least three different calibration conditions, calibrate a surface heat dissipation coefficient of the object 10 to be measured and a ratio of thermal resistances between the object 10 to be measured and the temperature sensor 207 according to the obtained steady-state temperature data, and then calculate a deep temperature of the object 10 to be measured according to the ratio of thermal resistances, the surface heat dissipation coefficient, and the latest steady-state temperatures of the first preset position, the second preset position, and the third preset position in a measurement environment.

Wherein, when acquiring steady-state temperatures of the first preset position of the upper surface, the second preset position of the lower surface and the third preset position of the lower surface of the temperature sensor 207 under at least three different calibration conditions, when the calibration condition is not heating the peripheral space of the temperature sensor 207, the processor 206 acquires first steady-state temperatures of the first preset position of the upper surface, the second preset position of the lower surface and the third preset position of the lower surface of the temperature sensor 207, when the calibration condition is heating the peripheral space of the temperature sensor 207 with the first preset power, the processor acquires second steady-state temperatures of the first preset position of the upper surface, the second preset position of the lower surface and the third preset position of the lower surface of the temperature sensor 207, when the calibration condition is heating the peripheral space of the temperature sensor 207 with the second preset power, the processor 206 acquires the first preset position of the upper surface, the second steady-state temperature of the lower surface of the temperature sensor 207, and the second steady-state temperature of the temperature of, A third steady state temperature at the second predetermined location of the lower surface and a third predetermined location of the lower surface.

Specifically, the temperature sensor 207 is first attached to a suitable position on the surface of the object 10 to be measured, the heating member 205 is not controlled to operate, and the temperature T at the first predetermined position is measured₂Temperature T of the second predetermined position₁And the temperature T of the third predetermined position₃After waiting for a period of time, the first preset position and the second preset positionWhen the temperature fluctuation value (such as variance) of the third preset position is smaller than a first preset threshold value (such as 0.05 ℃), a first steady state can be obtained, and the T at the moment is recorded₁、T₂、T₃As the first steady state temperature.

Then, the peripheral space of the temperature sensor 207 is heated with a first predetermined power, and the temperature T of the first predetermined position is measured₂₂Temperature T of the second predetermined position₁₂And the temperature T of the third predetermined position₃₂When the temperature fluctuation values of the first preset position, the second preset position and the third preset position are all smaller than a second preset threshold (for example, 0.05 ℃), respectively acquiring the current temperatures T of the first preset position, the second preset position and the third preset position₁₂、T₂₂、T₃₂As the second steady state temperature.

Then, the peripheral space of the temperature sensor 207 is heated with a second predetermined power, and the temperature T of the first predetermined position is measured₂₃Temperature T of the second predetermined position₁₃And the temperature T of the third predetermined position₃₃When the temperature fluctuation values of the first preset position, the second preset position and the third preset position are all smaller than a second preset threshold (for example, 0.05 ℃), respectively acquiring the current temperatures T of the first preset position, the second preset position and the third preset position₁₃、T₂₃、T₃₃As the third steady state temperature.

Then, obtaining a first equation according to the first steady-state temperatures of the first preset position, the second preset position and the third preset position:

in the formula, T₁: a first steady state temperature indicative of a second predetermined location; t is₂: a first steady state temperature indicative of a first preset position; t is₃: a first steady state temperature indicative of a third predetermined position; r_s: represents the equivalent thermal resistance from the lower surface of the temperature sensor 207 to the upper surface of the temperature sensor 207; r_d: representing the equivalent thermal resistance from the deep part 101 of the object 10 to be measured to the surface of the object 10 to be measured;k: representing the surface heat dissipation coefficient of the object 10 to be measured;

obtaining a second equation according to the first preset position, the second preset position and the second steady-state temperature of the second preset position:

in the formula, T₁₂: a second steady state temperature representing a second predetermined location; t is₂₂: a second steady state temperature indicative of a first predetermined position; t is₃₂: a second steady state temperature indicative of a third predetermined position;

obtaining a third equation according to the first preset position, the second preset position and the third steady-state temperature of the second preset position:

in the formula, T₁₃: a third steady state temperature representing a second predetermined position; t is₂₃: a third steady state temperature indicative of the first predetermined location; t is₃₃: representing a third steady state temperature at a third preset position.

Finally, the first equation, the second equation and the third equation are simultaneously established to obtain the surface heat dissipation coefficient of the object to be measured 10 and the ratio of the thermal resistance between the object to be measured 10 and the temperature sensor 207.

After obtaining the specific values of the surface heat dissipation coefficient and the ratio of the thermal resistances between the object to be measured 10 and the temperature sensor 207, under the measurement environment, the deep temperature of the object to be measured 10 is calculated according to the ratio of the thermal resistances, the surface heat dissipation coefficient, and the latest steady-state temperatures of the first preset position, the second preset position, and the third preset position, and the calculation formula is as follows:

in the formula, T₁": representing the latest steady state temperature at the second preset position; t is₂": indicating the latest steady state of the first preset position(ii) temperature; t is₃": indicating the latest steady state temperature at the third preset position.

The calibration of the thermal resistance ratio and the surface heat dissipation coefficient is carried out by the device, so that the measurement result is closer to the actual condition of the object 10 to be measured, and the measurement precision is improved.

Further, in order to improve the measurement accuracy, after the deep temperature is measured in the measurement environment, the processor 206 starts to accumulate the measurement time, recalibrates the thermal resistance ratio and the surface heat dissipation coefficient between the object 10 to be measured and the temperature sensor 207 when the measurement time reaches the preset time, and then calculates the deep temperature according to the recalibrated thermal resistance ratio, so that the measurement accuracy is higher when the deep temperature is monitored for a long time.

Seventh embodiment

Fig. 12 is a flowchart illustrating a method of measuring a temperature at a deep portion of an object based on a heat flow method according to a seventh embodiment. Referring to fig. 12, the method for measuring the temperature of the deep portion of the object based on the thermal flow method of the present embodiment includes:

step 13: under the measuring environment, the deep part temperature of the object to be measured is calculated according to the ratio of the thermal resistances and the latest steady-state temperatures of the upper surface and the lower surface of the temperature sensor.

In one embodiment, step 11 may comprise: when the calibration condition is that the peripheral space of the temperature sensor is not heated, first steady-state temperatures of the upper surface and the lower surface of the temperature sensor are obtained; and when the calibration condition is that the peripheral space of the temperature sensor is heated, acquiring second steady-state temperatures of the upper surface and the lower surface of the temperature sensor.

Wherein, when the calibration condition is to heat the peripheral space of the temperature sensor, the process of obtaining the second steady-state temperatures of the upper surface and the lower surface of the temperature sensor may include:

controlling the heating element to work at a preset heating power so as to heat the peripheral space of the temperature sensor;

Alternatively, when the calibration condition is to heat the peripheral space of the temperature sensor, the process of acquiring the second steady-state temperatures of the upper surface and the lower surface of the temperature sensor may include:

controlling the heating element to start working so as to heat the peripheral space of the temperature sensor;

the current temperatures of the upper surface and the lower surface of the temperature sensor are respectively acquired as second steady-state temperatures.

In the above process, a second steady state is constructed by adding a heat source, so that a new heat balance equation is obtained, and self-calibration of the thermal resistance ratio is realized, and for a specific calibration process and a corresponding deep temperature continuous monitoring process, reference may be made to the description of the embodiments corresponding to fig. 2, fig. 3, fig. 4, and fig. 9, which is not described herein again.

In another embodiment, step 11 may include: when the calibration condition is that the peripheral space of the temperature sensor is closed, acquiring first steady-state temperatures of the upper surface and the lower surface of the temperature sensor; and when the calibration condition is that the peripheral space of the temperature sensor is open, acquiring second steady-state temperatures of the upper surface and the lower surface of the temperature sensor.

In the above process, the closed state of the peripheral space of the temperature sensor is changed to construct different stable states, and self-calibration of the thermal resistance ratio can be achieved without a heat source or auxiliary equipment, and the specific calibration process and the corresponding deep temperature continuous monitoring process can refer to the description of the corresponding embodiments in fig. 5, 6, and 9, and are not described herein again.

In this embodiment, after step 13, the method further includes:

accumulating the measurement time;

In order to improve the measurement accuracy, the ratio of the thermal resistance to the thermal resistance can be recalibrated at intervals of a certain time in the measurement process. And for the condition of calibrating the thermal resistance ratio by the heating source, when the measuring time length reaches the preset time length, controlling the heating element to work according to the required calibration condition, acquiring the steady-state temperatures of the upper surface and the lower surface of the temperature sensor under different calibration conditions again, and calibrating the thermal resistance ratio between the object to be measured and the temperature sensor again. For the case of calibrating the thermal resistance ratio by changing the closed state of the peripheral space of the temperature sensor, when the measurement duration reaches the preset duration, prompting the user to reconstruct the closed state and the open state of the peripheral space of the temperature sensor, such as re-clamping armpits and releasing, so as to re-acquire the steady-state temperatures of the upper surface and the lower surface of the temperature sensor under different calibration conditions, and then recalibrate the thermal resistance ratio between the object to be measured and the temperature sensor. Thus, the measurement accuracy is higher when the deep temperature is monitored for a long time.

Eighth embodiment

Fig. 13 is a flowchart illustrating a method for measuring the temperature of the deep portion of the object based on the heat flow method according to the eighth embodiment. Referring to fig. 13, the method for measuring the temperature of the deep portion of the object based on the thermal flow method of the present embodiment includes:

step 21: under a measuring environment, acquiring first steady-state temperatures of the upper surface and the lower surface of a temperature sensor and a deep initial temperature of an object to be measured, wherein the lower surface of the temperature sensor is attached to the surface of the object to be measured;

In step 21, the deep initial temperature of the object to be measured sent by the external device is obtained through wired and/or wireless connection.

In the embodiment, the ratio of the deep initial temperature to the thermal resistance of the object to be detected is directly obtained through the external equipment for calibration, and the method is simpler to use for a scene capable of synchronously obtaining the deep temperature of the object. The detailed implementation process of the above steps is detailed in the related description of the embodiments shown in fig. 7, fig. 8 and fig. 9, and is not described herein again.

Further, after step 23, the method further comprises:

accumulating the measurement time;

when the measuring time length reaches a preset time length, acquiring the current steady-state temperatures of the upper surface and the lower surface of the temperature sensor as updated first steady-state temperatures, and acquiring the deep part current temperature of the object to be measured as an updated deep part initial temperature;

In order to improve the measurement precision, after the deep temperature is measured in a measurement environment, the measurement time is accumulated, when the measurement time reaches a preset time, the current steady-state temperatures of the upper surface and the lower surface of the temperature sensor are obtained to serve as updated first steady-state temperatures, a user is prompted to provide the deep current temperature of the object to be measured again to serve as an updated deep initial temperature, then the ratio of the thermal resistances between the object to be measured and the temperature sensor is calibrated again, the deep temperature is calculated according to the ratio of the thermal resistances calibrated again, and therefore when the deep temperature is monitored for a long time, the measurement precision is higher.

Ninth embodiment

Fig. 14 is a flowchart illustrating a method of measuring a temperature at a deep portion of an object based on a heat flow method according to a ninth embodiment. Referring to fig. 14, the method for measuring the temperature of the deep portion of the object based on the thermal flow method of the present embodiment includes:

step 31: acquiring steady-state temperatures of a first preset position of an upper surface, a second preset position of a lower surface and a third preset position of the lower surface of the temperature sensor under at least three different calibration conditions, wherein the lower surface of the temperature sensor is attached to the surface of an object to be measured, and the first preset position is positioned right above the second preset position;

step 33: and under the measuring environment, calculating the deep temperature of the object to be measured according to the ratio of the thermal resistances, the surface heat dissipation coefficient and the latest steady-state temperatures of the first preset position, the second preset position and the third preset position.

In step 31, when the calibration condition is that the peripheral space of the temperature sensor is not heated, first steady-state temperatures of a first preset position of the upper surface, a second preset position of the lower surface, and a third preset position of the lower surface of the temperature sensor are obtained, when the calibration condition is that the peripheral space of the temperature sensor is heated with a first preset power, second steady-state temperatures of the first preset position of the upper surface, the second preset position of the lower surface, and the third preset position of the lower surface of the temperature sensor are obtained, and when the calibration condition is that the peripheral space of the temperature sensor is heated with a second preset power, the first preset position of the upper surface, the second preset position of the lower surface, and the third steady-state temperatures of the third preset position of the lower surface of the temperature sensor are obtained.

When the peripheral space of the temperature sensor is heated by first preset power and second preset power, monitoring temperature fluctuation values of a first preset position, a second preset position and a third preset position, and when the temperature fluctuation values of the first preset position, the second preset position and the third preset position are all smaller than a second preset threshold value, respectively obtaining current temperatures of the first preset position, the second preset position and the third preset position as steady-state temperatures under the current heating power.

In step 32, a first equation is obtained according to the first steady-state temperatures of the first preset position, the second preset position, and the third preset position:

in the formula, T₁: a first steady state temperature indicative of a second predetermined location; t is₂: a first steady state temperature indicative of a first preset position; t is₃: a first steady state temperature indicative of a third predetermined position; r_s: representing the equivalent thermal resistance from the lower surface of the temperature sensor to the upper surface of the temperature sensor; r_d: representing equivalent thermal resistance from the deep part of the object to be measured to the surface of the object to be measured; k: representing the surface heat dissipation coefficient of the object to be measured;

in the formula, T₁₃: a third steady state temperature representing a second predetermined position; t is₂₃: a third steady state temperature indicative of the first predetermined location; t is₃₃: a third steady state temperature representing a third predetermined position;

After obtaining the specific values of the surface heat dissipation coefficient and the ratio of the thermal resistances between the object to be measured and the temperature sensor, under the measuring environment, calculating the deep temperature of the object to be measured according to the ratio of the thermal resistances, the surface heat dissipation coefficient and the latest steady-state temperatures of the first preset position, the second preset position and the third preset position, wherein the calculation formula is as follows:

in the formula, T₁": representing the latest steady state temperature at the second preset position; t is₂": representing the latest steady state temperature of the first preset position; t is₃": indicating the latest steady state temperature at the third preset position.

The calibration of the thermal resistance ratio and the surface heat dissipation coefficient is carried out by the device, so that the measurement result is closer to the actual condition of the object to be measured, and the measurement precision is improved.

In this embodiment, after step 33, the method further includes:

accumulating the measurement time;

and when the measurement duration reaches the preset duration, returning to the step 31 to recalibrate the thermal resistance ratio and the surface heat dissipation coefficient between the object to be measured and the temperature sensor.

The present application further provides a computer storage medium having computer program instructions stored thereon; the computer program instructions, when executed by the processor, implement the method for measuring the deep temperature of an object based on the thermal flow method as described in the seventh, eighth and ninth embodiments.

According to the object deep temperature measuring method and device based on the heat flow method, the lower surface of the temperature sensor is attached to the surface of an object to be measured, the steady-state temperatures of the upper surface and the lower surface of the temperature sensor under different calibration conditions are obtained, or the first steady-state temperatures of the upper surface and the lower surface of the temperature sensor and the deep initial temperature of the object to be measured are obtained under the measuring environment, the ratio of the thermal resistances between the object to be measured and the temperature sensor is calibrated according to the obtained data, and then the deep temperature of the object to be measured is calculated according to the ratio of the thermal resistances and the latest steady-state temperatures of the upper surface and the lower surface of the temperature sensor under the measuring environment. By the method, self calibration of the thermal resistance ratio between the object to be measured and the temperature sensor can be realized, and the method is convenient to use and wider in application.

Based on the algorithm, on one hand, the detection of the deep temperature of the object to be detected can be realized, and the adaptive calibration of algorithm parameters is realized; on the other hand, under the condition that the thermal parameters of the sensor are known, the sensor can be used as a standard device for measuring the thermal resistance of the object to be measured and can be used for evaluating the thermal resistance characteristic of the object to be measured.

The above embodiments are merely illustrative of the principles and utilities of the present application and are not intended to limit the application. Any person skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present application. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical concepts disclosed in the present application shall be covered by the claims of the present application.

Claims

1. An object deep temperature measurement method based on a heat flow method is characterized by comprising the following steps:

2. The method for measuring the temperature at the deep part of an object based on the heat flow method according to claim 1, wherein the step 11 comprises:

3. The method for measuring the deep temperature of an object based on a heat flow method according to claim 2, wherein the step of obtaining a second steady-state temperature of the upper surface and the lower surface of the temperature sensor when the calibration condition is heating the peripheral space of the temperature sensor comprises:

4. The method for measuring the deep temperature of an object based on a heat flow method according to claim 2, wherein the step of obtaining a second steady-state temperature of the upper surface and the lower surface of the temperature sensor when the calibration condition is heating the peripheral space of the temperature sensor comprises:

5. The method for deep temperature measurement of an object based on thermal flow method according to any of claims 2-4, wherein the step 12 comprises:

In the formula, T₁: a first steady state temperature representative of a lower surface of the temperature sensor; t is₂: a first steady state temperature representative of an upper surface of the temperature sensor; t is₁': a second steady state temperature representative of a lower surface of the temperature sensor; t is₂': a second steady state temperature representative of an upper surface of the temperature sensor; r_s: representing an equivalent thermal resistance from a lower surface of the temperature sensor to an upper surface of the temperature sensor; r_d: and representing the equivalent thermal resistance from the deep part of the object to be measured to the surface of the object to be measured.

6. The method for measuring the temperature at the deep part of an object based on the heat flow method according to claim 1, wherein the step 11 comprises:

7. The method of claim 6, wherein the step 12 comprises:

In the formula, T₁: a first steady state temperature representative of a lower surface of the temperature sensor; t is₂: a first steady state temperature representative of an upper surface of the temperature sensor; t is_d0: representing the deep initial temperature of the object to be measured; t is₁': a second steady state temperature representative of a lower surface of the temperature sensor; t is₂': a second steady state temperature representative of an upper surface of the temperature sensor; r_s: representing an equivalent thermal resistance from a lower surface of the temperature sensor to an upper surface of the temperature sensor; r_d: and representing the equivalent thermal resistance from the deep part of the object to be measured to the surface of the object to be measured.

8. The method for deep temperature measurement of an object based on thermal flow method according to claim 1, wherein the step 13 comprises:

In the formula, T₁": indicating the latest steady state temperature at the second preset position；T₂": representing the latest steady state temperature of the first preset position; t is₃": representing the latest steady state temperature at the third preset position; r_s: representing an equivalent thermal resistance from a lower surface of the temperature sensor to an upper surface of the temperature sensor; r_d: representing equivalent thermal resistance from the deep part of the object to be detected to the surface of the object to be detected; k: and the surface heat dissipation coefficient of the object to be measured is represented as a constant.

9. The method for deep object temperature measurement based on thermal flow according to claim 1, further comprising, after step 13:

accumulating the measurement time;

10. An object deep temperature measurement method based on a heat flow method is characterized by comprising the following steps:

11. The method for deep temperature measurement of an object based on thermal flow according to claim 10, wherein said step 21 comprises:

12. The method for deep temperature measurement of an object based on thermal flow according to claim 10, wherein said step 23 comprises:

13. The method for deep object temperature measurement based on thermal flow according to claim 10, further comprising, after step 23:

accumulating the measurement time;

14. An object deep temperature measurement method based on a heat flow method is characterized by comprising the following steps:

15. The method for deep temperature measurement of an object based on thermal flow according to claim 14, wherein said step 31 comprises:

16. The method of claim 15, wherein the step 32 comprises:

in the formula, T₁₃: to representA third steady state temperature at the second predetermined location; t is₂₃: a third steady state temperature representative of the first preset position; t is₃₃: a third steady state temperature representative of the third preset position;

17. An object deep temperature measuring device based on a heat flow method is characterized by comprising:

a processor for performing the thermal flow method-based object deep temperature measurement method of any one of claims 1-5, 9.

18. The thermal flow method-based deep object temperature measuring device of claim 17, comprising a cover for receiving the heating element and the temperature sensor to form a closed peripheral space.

19. The device for measuring the deep temperature of an object according to claim 17, wherein a temperature measurement component is disposed at a first predetermined position of the upper surface, a temperature measurement component is disposed at a second predetermined position and a third predetermined position of the lower surface, respectively, the first predetermined position is located right above the second predetermined position, and the processor is configured to:

20. An object deep temperature measuring device based on a heat flow method is characterized by comprising:

a processor for performing the thermal flow method-based object deep temperature measurement method of any one of claims 1, 6-7, and 9.

21. The device for measuring the deep temperature of an object according to claim 20, wherein a temperature measurement component is disposed at a first predetermined position of the upper surface, a temperature measurement component is disposed at a second predetermined position and a third predetermined position of the lower surface, respectively, the first predetermined position is located right above the second predetermined position, and the processor is configured to:

22. An object deep temperature measuring device based on a heat flow method is characterized by comprising:

a processor for performing the thermal flow method-based object deep temperature measurement method of any one of claims 10, 11, 13.

23. The device for measuring the deep temperature of an object according to claim 22, wherein a temperature measurement component is disposed at a first predetermined position on the upper surface, a temperature measurement component is disposed at a second predetermined position and a third predetermined position on the lower surface, respectively, the first predetermined position is located right above the second predetermined position, and the processor is configured to:

24. An object deep temperature measuring device based on a heat flow method is characterized by comprising:

a processor for performing the thermal flow method based deep object temperature measurement method of any one of claims 14-16.

25. A computer storage medium having computer program instructions stored thereon; the computer program instructions when executed by a processor implement a thermal flow method based object core temperature measurement method as claimed in any one of claims 1 to 16.