CN1111400A - A method for manufacturing a semiconductor and an apparatus for the same - Google Patents
A method for manufacturing a semiconductor and an apparatus for the same Download PDFInfo
- Publication number
- CN1111400A CN1111400A CN94119374A CN94119374A CN1111400A CN 1111400 A CN1111400 A CN 1111400A CN 94119374 A CN94119374 A CN 94119374A CN 94119374 A CN94119374 A CN 94119374A CN 1111400 A CN1111400 A CN 1111400A
- Authority
- CN
- China
- Prior art keywords
- substrate
- nickel
- amorphous silicon
- solution
- catalyst elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
In a process for crystallizing an amorphous silicon film at a low temperature using a catalyst element, a system which automatically introduces the catalyst element into the amorphous silicon film is provided. The process steps are necessary for applying a solution containing an element which accelerates the crystallization of an amorphous silicon film are each effected in units 14 to 21. The substrate is transferred by a robot arm 12.
Description
The present invention relates to have the manufacture method and the producing device thereof of crystalline Si semiconductor film.
Known already at present the thin film transistor (to call TFT in the following text) that uses thin film semiconductor had been arranged.This TFT is by forming thin film semiconductor on substrate, constituting with this thin film semiconductor.This TFT can utilize in various integrated circuits, but what arouse attention especially is to be utilized as the switching device of each pixel of setting liquid crystal indicator of active array type with as the driving element that forms peripheral circuit in electrooptical device.
As the thin film semiconductor that utilizes on TFT, though use amorphous silicon film simple, exist the low problem of its electrical characteristics, have crystalline silicon thin film in order to improve the characteristic of TFT, can to utilize.Have crystalline silicon fiml and can be described as polysilicon, poly-silicon, microcrystal silicon etc.In order to obtain having crystalline silicon fiml, at first to form amorphous silicon film, undertaken by heating then that crystallization finishes.
, when using heating crystallization, need be under the heating-up temperature more than 600 ℃, heating is more than 10 hours, like this under the condition if use glass is the comparison difficulty as substrate.The strain point of glass of pitted skin 7059 glass that for example is used for the liquid crystal indicator of active type is 593 ℃, when considering the large tracts of land of substrate, is heated to more than 600 ℃ and can goes wrong.
According to present inventors' research, found then to heat at the surface trace ground of amorphous silicon film deposit nickel, palladium and then lead and other elements, under 550 ℃, handle and just can carry out crystallization in about 4 hours.
When importing above-mentioned trace element (promoting the catalyst elements of crystallization), the method that can use plasma treatment or vapour deposition method and then ion to inject.Alleged plasma treatment is meant in the plasma CVD apparatus of parallel plate-type or anode column type, with the material that contains catalyst elements as electrode, by in the atmosphere of nitrogen or hydrogen etc., producing plasma to the method for on amorphous silicon film, adding catalyst elements.
But a large amount of catalyst elements that import, owing to can damage the reliability of semiconductor device and electric stability, so also bad.
That is, although the promotion crystallization element (catalyst elements) of above-mentioned nickel etc. is when being the amorphous silicon crystallization, and necessary element does not contain in the silicon of having wished in crystallization as much as possible.In order to reach this purpose, it is strong to be chosen in the crystallized silicon inertia tendency as catalyst elements, and the consumption with the catalyst elements of necessity is few as far as possible during crystallization simultaneously, carries out crystallization with the amount of its minimum.For this reason, must critically control the incorporation of above-mentioned catalyst elements.
In addition, during as catalyst elements, at first form amorphous silicon film, carry out the interpolation of nickel, be made into the crystallinity silicon fiml, when studying its crystallisation procedure does etc. in great detail, confirmed following item with plasma processing with nickel.
(1) when importing to nickel on the amorphous silicon film with plasma treatment, nickel has been incorporated into the suitable degree of depth part in the amorphous silicon film before heat-treating.
(2) nuclear of crystallization initial stage generation is to produce from the surface that imports nickel.
(3) with vapour deposition method nickel during film forming, can be caused crystallization with plasma processing method in the same manner on the amorphous silicon film surface.
Can draw the nickel that imports with plasma treatment from above item is not the conclusion of fully all bringing into play its effect.That is, also exist the nickel that does not play a role as yet even import a large amount of nickel.This can think to have only when nickel and silicon contact point (face), just plays a role when low temperature crystallization.But also drawn the conclusion that will as much as possible nickel be dispersed into imperceptibly the atom shape.Specifically just following conclusion, i.e. " importantly may carry out in the low temperature crystallized scope, the nickel with low concentration is dispersed into the atom shape as much as possible, imports to the near surface of amorphous silicon film ".
As the method that only imports denier nickel at the near surface of amorphous silicon film, in other words, promptly only import the method for the catalyst elements that promotes crystallization on the near surface denier ground of amorphous silicon film, can enumerate vapour deposition method, but this method exists controlled poor, and strict control catalyst element import volume is problem such as difficulty relatively.
As solution to the problems described above, the solution that has proposed to contain catalyst elements is coated on the amorphous silicon film, makes the catalyst elements of ormal weight be adsorbed on the technology of then carrying out crystallization on the amorphous silicon film surface by heat treated.
In this way, by being contained in the amount of nickel in the solution, solution and amorphous silicon film time of contact, just can strict control import amorphous, the concentration of the catalyst elements of silicon fiml.
The method of using this solution to add catalyst has a lot of advantages, but because its technology.Shortcoming is too simply also arranged.So-called its shortcoming is meant the pollution of particle very sensitive.If particle can make solution not contact with coated fully when being present in coated of solution.
In addition, after catalyst elements is added operation, be necessary to heat-treat operation, but in this operation with diffusion furnace etc., also need to prevent since catalyst elements to the pollution of diffusion furnace etc.From then on viewpoint is seen, also produces the necessity that the working procedure of coating to solution manages.
The object of the present invention is to provide and use a series of series-operations, enter and use solution to import the structure of catalyst elements operation.
Fig. 1 represents the device of an example of the present invention.This device is to be coated in the surface of non-silicon fiml or to form the device that is formed the series of processes on the face of amorphous silicon film for the solution that carries out will containing continuously nickel.
As shown in Figure 1, whole device is configured in on 11 pedestals of representing with the blocking form.A plurality of substrates (in the present embodiment 20) are placed on the delivery vehicle 13, then by manipulator 12 one by one conveyance in the unit that carries out each operation.In addition, whole device will place a clean room, is less than the outside to keep inner dust amount, can reduce the pollution in the technical process like this.
Manipulator has from the structure of downside supporting substrate, and this just becomes can not pollute the surface that will carry out treatment substrate.
Below, be that example describes with the glass substrate of handling a slice.At first take out 1 glass substrate with manipulator 12 from delivery vehicle 13, conveyance determines unit 18 to the position.This determining positions unit has the function of correctly determining the substrate position on manipulator 12.This is owing to must substrate be configured in cause on the rotating platform with manipulator in the operation afterwards, at this moment, requires the center of rotating platform and the center of substrate to overlap.
After the position was determined to finish, conveyance was to cleaning unit 14.Certainly this conveyance is undertaken by manipulator 12.In cleaning unit 14, dispose rotating platform, substrate is placed on the rotating platform structure that the substrate that rotates along with rotating platform cleans with pure water.
After cleaning end, drying unit 15 is arrived in the substrate conveyance, carry out drying by manipulator 12.This drying unit 15 has can be placed on substrate the structure of carrying out heat drying on the hot plate.For this drying unit, use the air-dry dry structure of temperature just passable.
Dried substrate arrives cooling unit 16 by manipulator 12 conveyances.Cooling unit 16 is for the warmed-up substrate of cool drying operation.In this cooling unit, cool off substrate by substrate being placed on the big metal of conductive coefficient.
Cooled substrate is arrived oxidation unit by conveyance.At oxidation unit, in oxidizing atmosphere,, generate ozone by UV light from Cooper-Hewitt lamp, oxidation is carried out on the surface that forms face.This oxidation unit is in order to become air-tight state after sending into substrate, it is to be with the chamber of door to constitute by one.In oxidation unit, substrate surface forms oxide-film as thin as a wafer.
In the working procedure of coating of this oxide-film solution afterwards, can play to improve and be stained with profit characteristic purpose and as the effect that contains the support of catalyst elements compound.
As this oxidation unit the structure of carrying out thermal oxidation can be arranged, the structure that oxidizing solution that also can useful hydrogen peroxide etc. carries out oxidation.
After oxidation finishes, once more substrate is delivered to determining positions unit 18 and carried out the position and determine.Conveyance then is to coating element 19, and coating element 19 has and promotes the solution that contains catalyst elements of crystallization to be coated in on-chip function with containing.
Specifically, have the solution that to contain catalyst elements and be coated in the surface that is placed on the substrate on the rotating platform, then be rotated dry structure.Except with the spinning solution, also can pass through the method drying of air-flow or heating in solution coating back.
Then, carry out drying with drying unit 20 as required.This is because the dry inadequate cause of coating element 19.In drying unit 15 and 20, when drying means is identical, also can only use a unit in addition.
When substrate is heated in drying process, the substrate conveyance is cooled off to cooling unit 21, this operation also can be carried out in cooling unit 16.
So just on the surface of the amorphous silicon film of glass substrate, imported catalyst elements, then directly entered heating treatment step without matting.Also wish to move on to another container by manipulator from a container when entering heating treatment step, such structure is unusual effective measures for solving particle and pollution problems.
In the represented structure of Fig. 1, for each unit a determining positions mechanism can be arranged, in Fig. 1, also do not express, as appending laser annealing unit and the heat treated unit that carries out heat treated with laser radiation, and then use the unit of infrared light-struck rapid thermal annealing (RTA), also can carry out processed continuously structure in useful these unit.
Below to catalyst elements and the solution that is used to add catalyst elements describe.Can use the aqueous solution, organic solvent solution as solution.In addition, the state that is contained in the catalyst elements in the solution can be enumerated state that contains compound and the state that just disperses.
Can use as the solvent that contains catalyst elements and to elect water from polar solvent, alcohol, acid, the ammonia.
Use nickel as catalyst, when being contained in this nickel in the polar solvent, nickel adds with the nickel compound form.As the typical example of nickel compound, can use and from nickelous bromide, nickel acetate, nickel oxalate, nickelous carbonate, nickel chloride, nickel iodide, nickel nitrate, nickelous sulfate, nickel formate, nickel acetylacetonate, 4-cyclohexyl butyric acid nickel, nickel oxide, nickel hydroxide, elect.
In addition, as the solvent that contains catalyst elements, can use and elect benzene,toluene,xylene from nonpolarity solvent, carbon tetrachloride, chloroform, ether, trichloroethylene, the CFC.In addition, the polarity of saying here is not very strict, is based on that general chemical property defines.
The nickel of this moment is to import with the form of nickel compound.Can use as representational nickel compound and from nickel acetylacetonate, 2-ethyl acid nickel, to elect.
In addition, it also is useful adding surfactant in containing the solution of catalyst elements.This is owing to can improve the adaptation to coated, the cause of control adsorptivity.This surfactant also can be coated on coated in advance.
When using monomer nickel, it must be dissolved in and make solution in the acid and use as catalyst elements.
Above-described, be to use the consoluet solution of catalyst elements nickel, needn't consoluet nickel but also can use, just for example use the powder of forming by nickel monomer or nickel compound to be evenly dispersed in emulsion material in the dispersion solvent.
Above-mentioned in addition situation is for using nickel catalyst material in addition also to be suitable for.
Use nickel as the catalyst elements that promotes crystallization, when use contains the water class polar solvent of this nickel, when directly being coated in these solution on the amorphous silicon film, often be not stained with solution, at this moment, if at first form 100
Following thin oxide film, coating thereon then contains the solution of catalyst elements, just can apply solution equably.In addition, as by add material such as surfactant in solution, it also is effective that lubricant nature is stained with in improvement.
In addition, when using the nonpolarity solution such as toluene solution of 2-ethyl acid nickel, can directly be coated on the amorphous silicon film surface as solution.Be effective if be coated with the materials such as driving fit agent that are applied to diaphragm coating use in advance this moment.It should be noted that and to hinder the interpolation of catalyst elements in amorphous silicon when coating amount is too much on the contrary.
The amount that is contained in the catalyst elements in the solution is also relevant with the kind of solution, general is 200ppm-1ppm to solution concentration preferably with the amount of nickel, preferably the weight of 50ppm-1ppm(nickel element is to the ratio of solution weight), this is that crystallization finishes the back by the value that nickel concentration and hydrofluoric acid resistance determined in the film.
In addition, by optionally applying the solution that contains catalyst elements, can optionally carry out crystalline growth.Particularly for the zone that does not have coating, show greatly from the zone that has applied solution with the parallel direction of the face of silicon fiml and carry out crystalline growth.The zone that this roughly grows up with the parallel direction on silicon fiml plane is called the zone of transverse crystallizing growth in this manual.
Through confirming that this its catalyst elements concentration of zone of laterally carrying out crystalline growth is low.As semiconductor device active layer zone, it is useful utilizing the crystallinity silicon fiml, but the impurity concentration in the active layer zone is generally preferably very low.Therefore, using above-mentioned zone of laterally carrying out crystalline growth, form the active layer zone of semiconductor device, is very useful for manufacturing device.
In the present invention, can obtain the most significant effect when using nickel as catalyst elements, but the kind of other utilizable catalyst elements preferably Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pd, P, As, Sb.Can also utilize one or more elements of from VIII family element, III b, IV b, V b element, electing in addition.
Use Fe(iron as catalyst elements) time, can use as the known material of the molysite of its compound, as from ferrous bromide (FeBr
26H
2O), ferric bromide (FeBr
36H
2O), ferric acetate (Fe(C
2H
3O
2)
3XH
2O), frerrous chloride (FeCl
24H
2O), iron chloride (FeCl
36H
2O), ferric flouride (FeF
33H
2O), ferric nitrate (Fe(NO
3)
39H
2O), ferrous phosphate (Fe
3(PO
4)
28H
2O), ferric phosphate (FePO
42H
2O) elect in.
Use the Co(cobalt as catalyst elements) time, can use as the known material of the cobalt salt of its compound, as from cobaltous bromide (CoBr6H
2O), cobalt acetate (Co(C
2H
3O
2)
24H
2O), cobalt chloride (CoCl
26H
2O), cobaltous fluoride (CoF
2XH
2O), cobalt nitrate (Co(NO
3)
26H
2O) elect in.
Use the Ru(ruthenium as catalyst elements) time, can use as the known material of the ruthenium salt of its compound, as ruthenic chloride (RuCl
3H
2O).
Use the Rh(rhodium as catalyst elements) time, can use as the known material of the rhodium salt of its compound, as radium chloride (RhCl
33H
2O).
Use the Pd(palladium as catalyst elements) time, can use as the known material of the palladium salt of its compound, as palladium bichloride (PdCl
22H
2O).
Use the Os(osmium as catalyst elements) time, can use as the known material of the osmium salt of its compound, as osmium chloride (OsCl
3).
Use Ir(iridium as catalyst elements) time, can use from as the known material of the iridium salt of its compound, as from iridous chloride (IrCl
33H
2O), iridic chloride (IrCl
4) in elect.
Use Pt(platinum as catalyst elements) time, can use as the known material of the platinum salt of its compound, as platinum chloride (PtCl
45H
2O).
Use Cu(copper as catalyst elements) time, can use as the known material of the mantoquita of its compound, as from cupric acetate (Cu(CH
3COO)
2), copper chloride (CuCl
22H
2O), copper nitrate (Cu(NO
3)
23H
2O) elect in.
When using gold, can use golden salt, as from gold trichloride (AuCl as its compound as catalyst elements
3XH
2O), chlorauride salt (AuHCl
44H
2O), tetrachloro gold sodium (AuNaCl
42H
2O) material of electing in.
In addition, the introduction method of catalyst not necessarily is limited in solution such as using the aqueous solution, alcohol, can use the material that contains catalyst elements widely, for example, uses the metallic compound and the oxide that contain catalyst elements.
Embodiment 1
Present embodiment is after will promoting that the catalyst elements of crystallization is contained in the aqueous solution, to be coated on the amorphous silicon film, then makes the example of its crystallization by heating.
Fig. 2 has represented the production process of present embodiment.Explanation in the present embodiment imports catalyst elements (using nickel here) process before.In the present embodiment, use corning glass 7059 as substrate 201.And its size is 100mm * 100mm.
At first, form 100～1500 by plasma CVD method or LPCVD method
The amorphous state silicon fiml.Here, the thickness of the amorphous silicon film 22 that forms with the CVD method is 1000
(Fig. 2 (A)).
201 of the substrates that below will form amorphous silicon film are called substrate.Use as the represented device of Fig. 1 the operation that nickel is imported amorphous silicon film 22 surfaces is described.
At first, the substrate 201 that has formed amorphous silicon film 22 as Fig. 2 (A) with multi-disc is configured on the delivery vehicle 13.Then with manipulator 12 the substrate conveyance is determined unit 18 to the position, after the position was determined, conveyance was carried out pure cleaning to substrate here to cleaning unit 14.
Then, the substrate conveyance to drying unit 15, is carried out 90 seconds drying under 120 ℃.Then substrate is delivered to cooling unit 16, carried out the cooling in 5 seconds.Then, again the substrate conveyance is determined unit 18 to the position, carry out the position and determine.Then, the substrate conveyance to oxidation unit 17, in oxygen atmosphere, is used UV rayed 5 minutes, form oxide-film 23 as thin as a wafer on the amorphous silicon film surface.
In addition, replace UV light, substrate can be immersed in the aquae hydrogenii dioxidi that is heated to 70 ℃ 5 minutes, also can obtain oxide-film.Can also use heat oxide film.
This oxide-film 12 can play the effect that acetate solution is coated in the whole surface of amorphous silicon in the nickeliferous acetate solution operation of coating afterwards,, is stained with lubricant nature in order that improve that is.For example, when directly acetate solution directly being coated in the amorphous silicon film surface, because amorphous silicon is not stained with acetate, so can not on the whole surface of amorphous silicon film, import nickel.That is, can not carry out the crystallization of homogeneous.
After forming oxide-film 23, to coating element 19, coating contains the acetum of nickel on substrate with the substrate conveyance.The acetate solution that promptly on the surface of amorphous silicon film 22, contains nickel by oxide-film 23 coatings as thin as a wafer.
In the present embodiment, the nickel concentration in the employed solution when being converted into weight, is 100ppm with respect to acetate solution.Working procedure of coating is undertaken by following mode.At first, with the surface of the oxide-film 23 of this acetate solution on amorphous silicon film 22 2ml that drips, this state kept 5 minutes.Then use rotating platform to be rotated drying (2000rpm, 60 seconds).
(with reference to Fig. 1 (C), (D)).
What the nickel concentration in the acetum was commonly used is more than 1ppm, preferably more than 10ppm.In addition, when the nonpolarity solvent that uses as the toluene solution class of 2-ethyl acid nickel, can not need oxide-film 23, directly catalyst elements be imported on the amorphous silicon film.
By 1 time to the working procedure of coating that carries out this nickel solution for several times, can on the surface of the amorphous silicon film behind the Rotary drying 22, form and have number
～hundreds of
Average film thickness contain nickel dam.At this moment, in the nickel of this layer heating process afterwards, can be spread in the amorphous silicon film, play the catalyst action that promotes crystallization.Moreover this layer is not limited to become complete film.
After being coated with above-mentioned solution, under this state, kept 5 minutes.Length according to the retention time can be controlled the concentration that is contained in the final nickel in the silicon fiml 22, but maximum governing factor still is the concentration of solution.
After coating ends, substrate 20 is carried out drying from working procedure of coating 19 conveyances to drying unit, and then in cooling unit 21, cool off.
So, use the operation of Fig. 1 device to finish.Then, in heating furnace, in blanket of nitrogen, under 550 ℃, carry out 4 hours heat treated.Its result can obtain on substrate 201 forming and has crystalline silicon thin film 22.
Above-mentioned heat treated can be carried out in the temperature more than 450 ℃, but temperature just must prolong heating time when low, and production efficiency also just descends.In addition, if when carrying out more than 550 ℃, the thermal endurance problem of glass substrate as substrate will appear using.
Be that explanation imports the method for catalyst elements in the present embodiment on amorphous silicon film, but also can adopt the method that under amorphous silicon film, imports catalyst elements.At this moment, be before the film forming of amorphous silicon film, use the solution contain catalyst elements, on underlying membrane, import catalyst elements.
In the present embodiment, use the crystalline silicon fiml that has of embodiment 1 making, the example of the TFT on each pixel parts of liquid crystal indicator that is arranged on active array type is made in expression.In addition,, be not only liquid crystal indicator, can certainly utilize in general thin film integrated circuit as the range of application of TFT.
At first, the crystallinity silicon fiml that will produce according to embodiment 1 represented operation forms the zone 104 of island with scribing.This island areas 104 has constituted the active layer of TFT.And formed thickness 200～1500
, be 1000 here
Silica 105.This silicon oxide film also plays gate insulating film (Fig. 3 (A)).
Must note meticulously when making above-mentioned silicon oxide film 105.Here being to be raw material with TEOS, with oxygen, is 150～600 ℃ at substrate temperature, preferably under 300～450 ℃, decomposes the silicon oxide deposition film with the RF plasma CVD method.The pressure ratio of TEOS and oxygen is 1: 1～1: 3, and in addition, pressure is 0.05～0.5torr, and RF power is 100～250W.Perhaps be raw material with TEOS with ozone by decompression CVD method or atmospheric pressure cvd method, 350～600 ℃ of substrate temperatures, preferably 400～550 ℃ form down.After the film forming, in the atmosphere of oxygen or ozone, under 400～600 ℃, annealed 30～60 minutes.
Under this state,, also can promote the crystallization of silicon area 104 with KrF excimer laser (wavelength 248nm, the wide 20nsec of pulse) or the strong illumination equal with it.Particularly use infrared light RTA(rapid thermal annealing) heating glass substrate and only selectively heat silicon not, and owing to can reduce interface energy level on silicon and the silicon oxide film interface, so be favourable for making the insulated-gate type field effect semiconductor device.
Then, form thick 2000 with the electron beam vapour deposition method
The aluminium film of～1 μ m is carved into figure with it, forms gate electrode 106.In aluminium, can also mix 0.15～0.2%(weight) scandium (Sc).Then substrate being immersed in 1～3% the tartaric acid ethylene glycol solution of pH=7, is negative electrode with platinum, is anode with this aluminum gate electrode, carries out anodic oxidation.Anodic oxidation is to make voltage be raised to 220V with certain electric current at first, finishes after keeping 1 hour under this state.In the present embodiment, be under the constant current state, the rising speed of voltage is suitable 2～5V/ branch.Through handling like this, can form thickness 1500～3500
, for example 2000
Anodic oxide 109.(Fig. 3 (B)).
Then, with ion doping method (also claiming the plasma doping method) in the island silicon fiml of each TFT, with gate electrode as mask autoregistration ground implanted dopant (phosphorus).Use hydrogen phosphide (PH as impurity gas
3).Dosage is 1～4 * 10
15Cm
-2
And then, shown in Fig. 3 (C),,, can improve the crystallinity of crystallinity deterioration part to above-mentioned zone of mixing impurity with KrF excimer laser (wavelength 248nm, the wide 20nsec of pulse) irradiation.The energy density of laser is 150～400mJ/cm
2, 200～250mJ/cm preferably
2Form N type impurity (phosphorus) zone 108,109 like this.These regional sheet resistances are 200～800 Ω/mouths.
In this operation, replace laser, also can use photoflash lamp, make it to rise in the short time 1000～1200 ℃ (silicon monitor temperature), sample is heated promptly so-called RTA(rapid thermal annealing) (also claiming RTP, rapid hot technics).
Then, be by being raw material with TEOS as comprehensive insulant 110, by the plasma CVD method of itself and oxygen, perhaps forming thickness with the decompression CVD method of ozone or atmospheric pressure cvd method is 3000
Silicon oxide film.Substrate temperature is 250～450 ℃, for example 350 ℃.Have an even surface this silicon oxide film of available mechanical lapping after the film forming in order to make.And then with sputtering method deposit ITO film, it is carved into figure after, as pixel capacitors 111.(Fig. 3 (D)).
Then, insulant 110 between etch layer, as shown in Fig. 1 (E), in the source of TFT/drain region forms contact hole, forms the wiring 112,113 of chromium or titanium nitride, wiring 113 are connected with pixel capacitors 111.
After using plasma treatment, and the crystallinity silicon fiml of importing nickel compares with silicon oxide film, and is lower for the selectivity ratios of buffered hydrofluoric acid, so often be etched away in above-mentioned contact hole formation operation.
, in the present embodiment, when the aqueous solution of the low concentration of use 10ppm imports nickel, because the hydrofluoric acid resistance height so the above-mentioned contact hole that forms is stable, can reproduce out well.
At last, in hydrogen,, finished the hydrogenation of silicon with 300～400 ℃ of annealing 0.1～2 hour.So also just finished the making of TFT.And a plurality of TFT that will make simultaneously be arranged in rectangular after, then finished active array type LCD.This TFT has source/drain region 108/109 and passage forms district 114.In addition, the 115 electrical engagement parts that become NI.
When adopting the structure of present embodiment, the concentration that is present in nickel in the active layer is 3 * 10
18Cm
-3About or following, 1 * 10
16Atoms cm
-3～3 * 10
18Atoms cm
-3
Adopt structure of the present invention, can obtain the crystallinity silicon fiml at low temperatures expeditiously.
Moreover the layer that contains catalyst in an embodiment forms on amorphous silicon film, is pre-formed the layer that contains catalyst on substrate, and forming amorphous silicon film thereon also is within the scope of the invention.
The simple declaration of accompanying drawing
Fig. 1 represents the structure of embodiment.
Fig. 2 represents the production process of embodiment.
Fig. 3 represents the production process of embodiment.
The explanation of symbol
11 ... pedestal
12 ... manipulator
13 ... delivery vehicle
14 ... cleaning unit
15 ... drying unit
16 ... cooling unit
17 ... oxidation unit
18 ... the determining positions unit
19 ... coating element
20 ... drying unit
21 ... cooling unit
201 ... glass substrate
22 ... silicon fiml
23 ... oxide-film
25 ... rotating platform
Claims (4)
1, semiconductor fabrication device, it is characterized in that having a plurality of processing units of treatment substrate function, between above-mentioned a plurality of processing units, have substrate conveyance means for the conveyance substrate, at least one of above-mentioned a plurality of processing units, have the solution that will contain the catalyst elements that promotes the amorphous silicon film crystallization, be coated in the function of substrate surface.
2, the semiconductor fabrication device of claim 1 is characterized in that forming amorphous silicon film at substrate surface.
3, semi-conductive manufacture method, comprising the conveyance means of use substrate, substrate is delivered to the Unit the 1st with oxidation substrate function of surface the oxidation substrate surface operation and, after this operation, use the conveyance means of substrate that substrate is taken out of from Unit the 1st, and deliver to the operation that on substrate surface, applies above-mentioned solution in the Unit the 2nd that has the solution function that applies the catalyst elements that contains the crystallization that promotes amorphous silicon film on the substrate surface.
4, the method for semiconductor manufacturing of claim 3 is characterized in that forming amorphous silicon film at substrate surface.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33958693 | 1993-12-03 | ||
| JP339586/1993 | 1993-12-03 | ||
| JP339586/93 | 1993-12-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1111400A true CN1111400A (en) | 1995-11-08 |
| CN1149631C CN1149631C (en) | 2004-05-12 |
Family
ID=18328884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB941193748A Expired - Fee Related CN1149631C (en) | 1993-12-03 | 1994-12-03 | A method for manufacturing a semiconductor and an apparatus for the same |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100315756B1 (en) |
| CN (1) | CN1149631C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100530507C (en) * | 2003-03-25 | 2009-08-19 | 玉井忠素 | Vacuum processing system capable of carrying processed object in and out from vacuum room |
| CN105478415A (en) * | 2015-12-30 | 2016-04-13 | 中国科学院上海硅酸盐研究所 | Full-automatic surface treatment machine |
-
1994
- 1994-12-03 KR KR1019940032647A patent/KR100315756B1/en not_active IP Right Cessation
- 1994-12-03 CN CNB941193748A patent/CN1149631C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100530507C (en) * | 2003-03-25 | 2009-08-19 | 玉井忠素 | Vacuum processing system capable of carrying processed object in and out from vacuum room |
| CN105478415A (en) * | 2015-12-30 | 2016-04-13 | 中国科学院上海硅酸盐研究所 | Full-automatic surface treatment machine |
Also Published As
| Publication number | Publication date |
|---|---|
| KR950021251A (en) | 1995-07-26 |
| CN1149631C (en) | 2004-05-12 |
| KR100315756B1 (en) | 2002-04-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1052565C (en) | A method for manufacturing a semiconductor device | |
| CN1134046C (en) | Method for manufacturing semiconductor device | |
| CN1143362C (en) | Method for manufacturing semiconductor device | |
| CN1051877C (en) | Semiconductor device and method for producing the same | |
| CN1052572C (en) | A method for manufacturing a semiconductor device | |
| CN1052564C (en) | Process for fabricating semiconductor and process for fabricating semifabricating | |
| CN1244161C (en) | Manufacturing method of semiconductor device | |
| CN1160759C (en) | Semiconductor device and its making method | |
| CN1094652C (en) | Method of manufacturing a semiconductor device | |
| CN1197164C (en) | Device having thin film transistor | |
| CN1280871C (en) | Method for manufacturing semiconductor | |
| CN1052569C (en) | Semiconductor device and method for forming the same | |
| CN1967876A (en) | Thin film transistor and method of manufacturing the same | |
| CN1149631C (en) | A method for manufacturing a semiconductor and an apparatus for the same | |
| CN1132409A (en) | Method for producing semiconductor devices, and crystal growth promoters | |
| CN1146038C (en) | A method for manufacturing the same | |
| CN1967791A (en) | Production method for forming semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040512 Termination date: 20121203 |