CN111136578A - Semiconductor wafer surface grinding protection sheet - Google Patents
Semiconductor wafer surface grinding protection sheet Download PDFInfo
- Publication number
- CN111136578A CN111136578A CN202010035178.5A CN202010035178A CN111136578A CN 111136578 A CN111136578 A CN 111136578A CN 202010035178 A CN202010035178 A CN 202010035178A CN 111136578 A CN111136578 A CN 111136578A
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- CN
- China
- Prior art keywords
- semiconductor wafer
- base material
- grinding
- layer
- protection sheet
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a semiconductor wafer surface grinding protection sheet, which comprises a base material; an intermediate layer is arranged on the base material; a surface adhesion layer is arranged on the middle layer; the base material is made of polyester and polyamide materials, and the thickness of the base material is 1-1000 um; the middle layer is a thermoplastic solid high molecular polymer, and the Vicat softening point temperature of the middle layer is tested, and the softening temperature is 50-80 ℃ under the applied pressure of 0.45MPa according to the ASTM D1525 standard; the surface adhesion layer is made of acrylic or polyurethane polymer and copolymer thereof; the semiconductor wafer surface grinding protection sheet provided by the invention provides good concave-convex absorption protection during grinding of the semiconductor wafer, and prevents the semiconductor wafer from being damaged.
Description
Technical Field
The present invention relates to a protective sheet for polishing a surface of a semiconductor wafer, which provides excellent protection against absorption of irregularities during polishing of the semiconductor wafer.
Background
In a step of polishing a non-circuit-formed surface in a manufacturing step of a semiconductor device using a semiconductor wafer, a semiconductor wafer protective sheet is attached to the circuit-formed surface of the semiconductor wafer in order to prevent damage to the circuit-formed surface of the semiconductor wafer.
Since not only the circuit but also the semiconductor bump and the like are formed on the circuit-formed surface of the semiconductor wafer with a large height difference, when the semiconductor wafer surface protection sheet is attached, if a gap is formed between the semiconductor wafer protection sheet and the circuit-formed surface of the semiconductor wafer, stress distribution is generated inside the semiconductor wafer surface when the non-circuit-formed surface of the semiconductor wafer is polished, and the semiconductor wafer is easily broken when polished to a thin thickness; therefore, there is a strong demand for the provision of a semiconductor wafer surface protective sheet having good conformability to unevenness.
Therefore, a grinding protection sheet for the surface of a semiconductor wafer, which provides good concave-convex absorption protection during grinding of the semiconductor wafer, is developed.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a semiconductor wafer surface grinding protection sheet which provides good concave-convex absorption protection during grinding of a semiconductor wafer.
In order to achieve the purpose, the invention adopts the technical scheme that: a semiconductor wafer surface grinding protection sheet comprises a substrate; an intermediate layer is arranged on the base material; a surface adhesion layer is arranged on the middle layer; the base material is made of polyester and polyamide materials, and the thickness of the base material is 1-1000 um; the middle layer is a thermoplastic solid high molecular polymer, and the Vicat softening point temperature of the middle layer is tested, and the softening temperature is 50-80 ℃ under the applied pressure of 0.45MPa according to the ASTM D1525 standard; the surface adhesive layer is made of acrylic or polyurethane polymer and copolymer thereof.
Preferably, the thermoplastic solid high molecular polymer has a Vicat softening point temperature test, and a softening temperature of 60-70 ℃ under an applied pressure of 0.45MPa according to ASTM D1525 standard.
Preferably, the thermoplastic solid high molecular polymer has a Vicat softening point temperature test, and a softening temperature of 65-75 ℃ under an applied pressure of 0.45MPa according to ASTM D1525 standard.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
the semiconductor wafer surface grinding protection sheet provided by the invention provides good concave-convex absorption protection during grinding of the semiconductor wafer, and prevents the semiconductor wafer from being damaged.
Drawings
The technical scheme of the invention is further explained by combining the accompanying drawings as follows:
FIG. 1 is a schematic view of a protective polishing sheet for polishing a surface of a semiconductor wafer according to the present invention;
FIG. 2 is an enlarged view of a semiconductor wafer according to the present invention in an applied state;
FIG. 3 is a first test report of a semiconductor wafer surface polishing protective sheet according to the present invention;
FIG. 4 is a second test report of a semiconductor wafer surface polishing protective sheet according to the present invention;
FIG. 5 is a report of rheometer test of an interlayer of My A/My B factory of a semiconductor wafer surface abrasive protective sheet according to the invention;
FIG. 6 is a report of a rheometer test of the other brand interlayer of the semiconductor wafer surface abrasive protective sheet of the present invention;
FIG. 7 is a rheometer test report for the interlayer of my Mill-C of a semiconductor wafer surface abrasive protective sheet according to the invention;
FIG. 8 is a rheometer test report for the interlayer of my Mill-D of a semiconductor wafer surface abrasive protective sheet according to the invention;
wherein: 1. a semiconductor wafer surface protection sheet; 11. a substrate; 12. an intermediate layer; 13. a surface adhesive layer; 2. a semiconductor wafer; 21. a circuit surface; 22. a concave-convex block; 23. and a back grinding layer.
Detailed Description
The invention is described in further detail below with reference to the figures and the embodiments.
Referring to fig. 1-2, a semiconductor wafer surface polishing protective sheet 1 according to the present invention comprises a substrate 11; an intermediate layer 12 is arranged on the substrate 11; a surface adhesion layer 13 is arranged on the middle layer 12; the base material is made of polyester and polyamide materials, and the thickness of the base material is 1-1000 um.
The intermediate layer 12 is a thermoplastic solid high molecular polymer, and the vicat softening point temperature test thereof suggests that the softening point under the applied pressure of 0.45MPa according to ASTM D1525 standard is 50-80 ℃, preferably 60-70 ℃, more preferably 65-75 ℃, if the softening point is lower than 50 ℃, the layer is easy to soften too much and flow and exude during the grinding process, which may cause the problem of wafer surface sticking, and if the softening point is higher than 80 ℃, the concave-convex absorption effect on the wafer surface circuit is not obvious.
The surface adhesive layer is made of acrylic or polyurethane polymer and copolymer thereof.
As shown in fig. 2, the semiconductor wafer 2 includes a body, a back-grinding layer 23 is disposed on a lower surface of the body, and a circuit surface 21 is disposed on an upper surface of the body; the circuit surface 21 is provided with a concave-convex block 22; when in application, the surface adhesive layer 13 is adhered to the circuit surface 21, and is ground by special grinding equipment, and after the grinding is finished, the grinding protection sheet 1 on the surface of the semiconductor wafer is torn off; the temperature during the polishing process of the conventional semiconductor wafer process is between 40-80 ℃, so the material of the intermediate layer is used for the Vicat softening point temperature test, and the softening point under the pressure of 0.45MPa according to ASTM D1525 standard is recommended to be 50-80 ℃, preferably 60-70 ℃, more preferably 65-75 ℃, so as to provide the temperature condition for softening the intermediate layer when the temperature generated during the wafer polishing process provides a better buffer effect to prevent the generation of internal stress after the wafer polishing.
The applicant has performed the tests detailed in figures 3-8.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
the semiconductor wafer surface grinding protection sheet provided by the invention provides good concave-convex absorption protection during grinding of the semiconductor wafer, and prevents the semiconductor wafer from being damaged.
The above-mentioned embodiments are merely illustrative of the technical idea and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be covered in the scope of the present invention.
Claims (3)
1. A semiconductor wafer surface grinding protection sheet is characterized in that: comprises a substrate; an intermediate layer is arranged on the base material; a surface adhesion layer is arranged on the middle layer; the base material is made of polyester and polyamide materials, and the thickness of the base material is 1-1000 um; the middle layer is a thermoplastic solid high molecular polymer, and the Vicat softening point temperature of the middle layer is tested, and the softening temperature is 50-80 ℃ under the applied pressure of 0.45MPa according to the ASTM D1525 standard; the surface adhesive layer is made of acrylic or polyurethane polymer and copolymer thereof.
2. The protective sheet for grinding the surface of a semiconductor wafer according to claim 1, wherein: the thermoplastic solid high molecular polymer has a Vicat softening point temperature test, and the softening temperature is 60-70 ℃ under the applied pressure of 0.45MPa according to the ASTM D1525 standard.
3. The protective sheet for grinding the surface of a semiconductor wafer according to claim 1, wherein: the thermoplastic solid high molecular polymer has a Vicat softening point temperature test, and the softening temperature is 65-75 ℃ under the applied pressure of 0.45MPa according to the ASTM D1525 standard.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010035178.5A CN111136578A (en) | 2020-01-14 | 2020-01-14 | Semiconductor wafer surface grinding protection sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010035178.5A CN111136578A (en) | 2020-01-14 | 2020-01-14 | Semiconductor wafer surface grinding protection sheet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111136578A true CN111136578A (en) | 2020-05-12 |
Family
ID=70524865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010035178.5A Pending CN111136578A (en) | 2020-01-14 | 2020-01-14 | Semiconductor wafer surface grinding protection sheet |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111136578A (en) |
-
2020
- 2020-01-14 CN CN202010035178.5A patent/CN111136578A/en active Pending
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