CN111129335B - Organic light emitting device and method for manufacturing thin film encapsulation layer - Google Patents

Organic light emitting device and method for manufacturing thin film encapsulation layer Download PDF

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CN111129335B
CN111129335B CN201910839560.9A CN201910839560A CN111129335B CN 111129335 B CN111129335 B CN 111129335B CN 201910839560 A CN201910839560 A CN 201910839560A CN 111129335 B CN111129335 B CN 111129335B
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organic light
light emitting
hydrocarbon compound
thin film
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CN111129335A (en
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郑泰熏
文智秀
李宰承
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AP Systems Inc
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    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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Abstract

The present invention relates to an organic light emitting device and a method for manufacturing a thin film encapsulation layer, and more particularly, to an organic light emitting device and a method for manufacturing a thin film encapsulation layer in which an inorganic layer and a hydrocarbon compound layer are laminated on an organic light emitting laminate. An organic light emitting device according to an exemplary embodiment may include: an organic light emitting laminate formed on the substrate; and a film encapsulating layer disposed on the organic light emitting laminate, and in which the inorganic layer and the hydrocarbon compound layer are alternately laminated.

Description

Organic light emitting device and method for manufacturing thin film encapsulation layer
Technical Field
The disclosure herein relates to an organic light emitting device and a method for manufacturing a thin film encapsulation layer, and more particularly, to an organic light emitting device and a method for manufacturing a thin film encapsulation layer in which an inorganic layer and a hydrocarbon compound layer are laminated on an organic light emitting laminate.
Background
An Organic Light Emitting Device (OLED) provided with an Organic light emitting laminate including a light emitting layer composed of a negative electrode, a positive electrode, and an Organic material interposed therebetween is a self-light emitting device and does not require a separate light source, and thus has advantages of not only being operable at a low voltage but also having a wide viewing angle and a fast response speed. However, since there is a limitation that the organic light emitting laminate is very susceptible to external moisture or oxygen and is weak in heat resistance, an encapsulation process is required to protect the organic light emitting laminate. For the encapsulation process, a covering method in which an absorber is attached to the inside of a glass or metal cover and the cover is attached to an organic light emitting laminate by using an adhesive or a film method in which a film encapsulation (TFE) including an organic film and/or an inorganic film is deposited on the organic light emitting laminate has been used.
In manufacturing TFE using the thin film method, an inorganic film formation process is repeated a plurality of times, wherein a process for forming an organic film at atmospheric pressure generally uses a solution method such as a screen printing method or an inkjet printing method, and a process for forming an inorganic film uses a vacuum method such as a Plasma Enhanced Chemical Vapor Deposition (PECVD) method or an Atomic Layer Deposition (ALD) method. At this time, in forming the organic film via the solution method, there are caused limitations in that the thickness of the organic film becomes non-uniform due to non-uniform release of the solution from the nozzle, and limitations in that the deposition process becomes cumbersome and particles are introduced since the deposition process is performed in the order of atmospheric pressure (organic film) -vacuum (inorganic film) -atmospheric pressure (organic film). In addition, in forming an organic film, there are a problem in that an organic light emitting laminate is damaged due to the use of a solvent, and a problem in that flexible characteristics are deteriorated with the increase of the thickness of the organic film due to a solution method, and thus, it is difficult to apply the organic film to a flexible display and the like.
Therefore, it is also possible to manufacture TFE by forming only an inorganic film on an organic light emitting laminate without an organic film, but when the inorganic film is directly formed in a state where particles existing on the organic light emitting laminate and/or the inorganic film are not completely removed, peeling of the inorganic film is caused while removing the particles when an Organic Light Emitting Device (OLED) is subsequently bent. When the inorganic film is caused to peel, the inorganic film peels while the particles peel off, and a water movement path from the outside to a position where the inorganic film peels is formed, and therefore, there is a limitation that the organic light emitting laminate is deteriorated and the durability is lowered.
(related art documents)
(patent document 1) Korean patent laid-open publication No. 10-2017-0022624
Disclosure of Invention
The present disclosure provides an organic light-emitting device comprising a thin film encapsulation layer in which an inorganic layer and a hydrocarbon compound layer are alternately laminated on an organic light-emitting laminate, and a method for manufacturing the thin film encapsulation layer for the organic light-emitting device.
According to an exemplary embodiment, an organic light emitting device includes: an organic light-emitting laminate formed on a substrate; and a film encapsulation layer disposed on the organic light emitting laminate, and in which inorganic layers and hydrocarbon compound layers are alternately laminated.
The hydrocarbon layer may comprise oligomers containing carbon and hydrogen.
The thickness of the hydrocarbon layer may be greater than the thickness of the inorganic layer.
The organic light emitting device may further include a hydrocarbon planarization layer interposed between the organic light emitting laminate and the thin film encapsulation layer.
According to another exemplary embodiment, a method for fabricating a thin film encapsulation layer includes: loading a substrate on which an organic light emitting laminate is formed into a chamber; depositing an inorganic layer on the organic light emitting laminate; and depositing a hydrocarbon compound layer on the inorganic layer, wherein the deposition of the inorganic layer and the deposition of the hydrocarbon compound layer are performed by using a vapor deposition method under a vacuum atmosphere.
The method for manufacturing a thin film encapsulation layer may further comprise depositing an inorganic layer on the hydrocarbon compound layer.
The deposition of the hydrocarbon layer may comprise: providing a vapor phase source material comprising carbon and hydrogen; supplying a process gas including a source material and a carrier gas for carrying the source material into the chamber; and forming a plasma inside the chamber to polymerize the oligomers containing carbon and hydrogen.
The source material may comprise an aliphatic hydrocarbon.
The source material may comprise at least any one of: methane, ethane, propane, butane, pentane, hexane, heptane, octane, hexadecane, ethylene, propylene, butene, pentene, hexene, isoprene, acetylene, cyclopropane, cyclobutane, cyclopentane, cyclohexane, butylcyclohexane, isopropylcyclohexane, cycloheptane, cyclooctane, 1-hexene, 2-methyl-1-hexene, 5-methyl-1-hexene, or butadiene.
The deposition of the hydrocarbon compound layer may further include supplying a discharge gas including hydrogen, helium, nitrogen, and an inert gas in the 2 nd cycle or more than the 2 nd cycle into the chamber.
The volume ratio occupied by the helium gas and the nitrogen gas in the entirety of the carrier gas and the discharge gas supplied into the chamber may be at least about 50% and less than about 100%.
Drawings
Exemplary embodiments may be understood in more detail by the following description taken in conjunction with the accompanying drawings, in which:
fig. 1 is a cross-sectional view of an organic light emitting device according to an exemplary embodiment.
FIG. 2 is a cross-sectional view of a thin film encapsulation layer in which particles are inserted on an inorganic layer according to an exemplary embodiment.
Fig. 3 is a cross-sectional view of an organic light emitting device including a hydrocarbon planarization layer according to an exemplary embodiment.
FIG. 4 is a flow chart of a method for manufacturing a thin film encapsulation layer according to another embodiment of the present invention.
Fig. 5 is a conceptual diagram for describing a deposition process of a hydrocarbon compound layer according to another exemplary embodiment.
Fig. 6a to 6c are conceptual diagrams for describing particle coverage characteristics according to a volume ratio occupied by helium and nitrogen in the entirety of a carrier gas and a discharge gas supplied into a chamber according to another exemplary embodiment.
Detailed Description
Exemplary embodiments will be described in detail below with reference to the accompanying drawings. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the description, like reference numerals refer to like configurations, which may be partially exaggerated in order to clearly illustrate exemplary embodiments, and like elements are referred to by like reference numerals in the drawings.
Fig. 1 is a cross-sectional view of an organic light emitting device according to an exemplary embodiment.
Referring to fig. 1, an organic light emitting device 100 according to an exemplary embodiment may include: an organic light emitting laminate 110 formed on the substrate 10; and a film encapsulation layer 120, the film encapsulation layer 120 being disposed on the organic light emitting laminate 110 and the inorganic layer 121 and the hydrocarbon compound layer 122 being alternately laminated on the film encapsulation layer 120.
The organic light emitting laminate 110 may be formed on the substrate 10 and formed of an organic light emitting layer composed of an organic material disposed on and between the negative and positive electrodes. The organic light emitting laminate 110 may further include a capping layer (CPL) formed on the negative electrode (or the upper electrode). When a voltage is applied to the respective negative and positive electrodes and electrons and holes are injected into the light-emitting layer, photons corresponding to an energy difference are released while excitons formed when the electrons and holes are combined with each other are shifted from an excited state to a ground state, and the organic light-emitting laminate 110 generates light on the basis of this principle.
The organic light emitting device 100 provided with the organic light emitting laminate 110 does not require a separate light source, and thus has advantages of being capable of being driven by a low voltage and having a wide viewing angle and a fast response speed. However, since there is a limitation that it is very susceptible to external moisture and oxygen and has weak heat resistance, a thin film encapsulation layer 120 for protecting the organic light emitting laminate 110 is required.
The thin film encapsulation layer 120 may prevent external moisture or oxygen from penetrating by sealing the organic light emitting laminate 110 disposed on the substrate 10 and may be disposed on the organic light emitting laminate 110, and the inorganic layer 121 and the hydrocarbon compound layer 122 may be alternately laminated. Herein, the order of laminating the inorganic layer and the hydrocarbon compound layer 122 is not particularly limited, but it may be necessary to deposit the inorganic layer 121 having good moisture permeability so as to be in contact with the organic light emitting laminate 110.
The inorganic layer 121 may suppress penetration of moisture or oxygen since the density of the thin film is densely formed, and penetration into the organic light emitting laminate 110 may be prevented by the inorganic layer 121. Herein, the inorganic layer 121 may include SiN x 、SiO y Or SiN x O y And may have a hydrophobic property with an increase in the amount x of nitrogen (N). At this time, carbon (C) may be added (or doped) into the inorganic layer 121. Accordingly, the inorganic layer 121 may have flexibility, and adhesion to the hydrocarbon compound layer 122 may be enhanced due to the similarity of the material to the hydrocarbon compound layer 122.
The hydrocarbon compound layer 122 may include carbon (C) and hydrogen (H), and may prevent or suppress vertical pinholes generated in the first deposited inorganic layer 121 from being transferred to the second deposited upper inorganic layer 121. In addition, the hydrocarbon compound layer 122 can serve to suppress moisture permeability and serve as a buffer layer (or stress relieving layer) that reduces interlayer stress between the inorganic layers 121. In addition, the hydrocarbon compound layer 122 has a planarization property, and the uppermost surface of the thin film encapsulation layer 120 may be smooth and provide flexibility to the thin film encapsulation layer 120 by having flexibility.
In general, in order to provide flexibility to the thin film encapsulation, a solution method such as a screen printing method or an inkjet printing method is used to form an organic film under normal pressure (or atmospheric pressure). When the organic film is formed through the solution method, the solution is non-uniformly discharged from the nozzle, and thus a problem of non-uniformity of the total thickness of the organic film is caused, and the organic light emitting laminate 110 is damaged due to the solvent remaining in the solution. In addition, since the flexible property is decreased as the thickness of the organic film increases due to the solution method, there is a problem in that it is difficult to apply the thin film encapsulation including the organic film to the flexible display.
However, the hydrocarbon compound layer 122 may be deposited through a vapor deposition method, such as Plasma Enhanced Chemical Vapor Deposition (PECVD), the thickness of the hydrocarbon compound layer 122 may be reduced while uniformizing the total thickness of the hydrocarbon compound layer 122, and damage to the organic light emitting laminate 110 due to the use of a solvent may also be prevented. In addition, the deposition process of the hydrocarbon compound layer 122 may be performed under a vacuum atmosphere, and thus, introduction of the particles 20 on the deposition surface of the organic light emitting laminate at normal pressure may be suppressed. In addition, vacuum pressure and atmospheric pressure replacement chambers may not be required, and the inorganic layer 121 and the hydrocarbon compound layer 122 may also be laminated in situ (in-situ) in a single chamber. Therefore, the occupied area of the entire apparatus can be reduced, and it is possible to easily reduce the apparatus cost and secure a space for a clean room.
In addition, the hydrocarbon compound layer 122 may include oligomers containing carbon (C) and hydrogen (H). Herein, the hydrocarbon compound layer 122 is not sufficiently polymerized, and may contain monomers that are not converted into oligomers, but does not contain polymers having a molecular weight of more than 1,400 and a number of monomers of more than 16. When the monomer having carbon (C) and hydrogen (H) is polymerized and cured into an oligomer having a molecular weight of 1,400 or less than 1,400 or an oligomer in which monomers having a number of 2 to 16 are coupled by a carbon chain, the hydrocarbon compound layer 122 having the oligomer may be dense. Therefore, the hydrocarbon compound layer 122 can have moisture permeation resistance.
If the hydrocarbon compound layer 122 is composed of only monomers, the hydrocarbon compound layer 122 will not be dense, have an unstable thin film, and thus will not have moisture permeation resistance. In contrast, when the hydrocarbon compound layer 122 is composed of a polymer, the coupling force between monomers connected by carbon chains is excessively high and the coupling force to a lower layer such as the inorganic layer 121 is lowered, and the entire hydrocarbon compound layer 122 may be easily separated from (or peeled off from) the lower layer.
However, when the hydrocarbon compound layer 122 is composed of an oligomer containing carbon (C) or hydrogen (H), the hydrocarbon compound layer 122 may be dense and have high resistance to moisture permeation, and therefore, the above-described problem of the hydrocarbon compound layer 122 may be solved.
In addition, since the hydrocarbon compound layer 122 contains carbon (C), the stress of the hydrocarbon compound layer 122 may be smaller than that of the inorganic layer 121, and may be adapted to be interposed between the inorganic layers 121 and to function as a stress relieving layer. In addition, a thin film composed of an oligomer containing carbon (C) and hydrogen (H) may have high mechanical strength and good light transmittance. Meanwhile, a Carbon Nitride (CN) film conventionally used instead of the organic film has a light absorption property, but a thin film composed of an oligomer containing carbon (C) and hydrogen (H) does not absorb light emitted from the organic light emitting laminate 110 and may be suitable for the thin film encapsulation layer 120 used for the organic light emitting device 100. In addition, the thin film composed of the oligomer containing carbon (C) and hydrogen (H) is hydrophobic, and therefore not only moisture can not pass through, but also oxygen gas can not remain due to the reducible reaction of hydrogen (H) with adjacent oxygen (O). That is, when the hydrocarbon compound layer 122 contains an oligomer including carbon (C) and hydrogen (H), the hydrocarbon compound layer 122 may have good moisture permeation resistance, oxidation resistance, and light transmittance, and may relieve stress between the inorganic layers 121 while maintaining the characteristics of the organic light emitting laminate in a desirable good state, and thus may be one of the best materials to be used for the thin film encapsulation layer 120 of the organic light emitting device 100.
Meanwhile, the hydrocarbon compound layer 122 may contain amorphous hydrocarbon (amophorus hydrocarbon). The hydrocarbon compound layer 122 including oligomers containing carbon (C) and hydrogen (H) and the hydrocarbon compound layer 122 including amorphous hydrocarbon can ensure a deposition rate of at least about 100 nm/min while forming the hydrocarbon compound layer 122. Thus, oligomers containing carbon (C) and hydrogen (H) or amorphous hydrocarbons may be deposited at suitable deposition rates as desired. At this time, when the hydrocarbon compound layer 122 is formed through a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, the deposition rate may be precisely controlled, and the hydrocarbon compound layer 122 having a relatively very small thickness compared to the thickness of an organic film formed through a solution method may be formed. In addition, when the hydrocarbon compound layer 122 is deposited by using plasma, polymerization of the monomer may be easily performed. In addition, the hydrocarbon compound layer 122 may have an unstable carbon chain structure passivated with hydrogen (H).
Fig. 2 is a cross-sectional view illustrating a thin film encapsulation layer in which particles are inserted on an inorganic layer according to an exemplary embodiment.
Referring to fig. 1 and 2, the thickness of the hydrocarbon compound layer 122 may be greater than the thickness of the inorganic layer 121. Particles that may not be removed may be present on the surface of the organic light emitting laminate 110 or the inorganic layer 121. The inorganic layer 121 has an unfavorable ductility or wetting property, and thus is not deposited while uniformly filling the space existing between the surface of the organic light emitting laminate 110 and the particles 20 or the space between the surface of the inorganic layer and the particles 20 (hereinafter, the space between the surface of the lower layer and the particles), and does not completely cover the organic light emitting laminate 110 or the inorganic layer 121 having the particles 20. In this case, the probability of external moisture or oxygen passing through the uncovered free space may increase, and delamination of the inorganic layer 121 may occur due to detachment of the particles 20.
Conversely, also when the particles 20 are present on the surface of the organic light-emitting laminate 110 or the inorganic layer 121 due to the good ductility and wetting property of the hydrocarbon compound layer 122, the organic light-emitting laminate 110 or the inorganic layer 121 may be completely covered by the hydrocarbon compound layer 122 having the particles 20 without forming spaces between the surface of the lower layer (the organic light-emitting laminate 110 or the inorganic layer 121) and the particles 20. That is, when the particles 20 are present on the surface of the organic light emitting laminate 110 or the inorganic layer 121, reverse tapered spaces may be generated below the particles 20 on the surface of the organic light emitting laminate 110 or the inorganic layer 121. The surface (or shape) of the hydrocarbon compound layer 122 on which the inorganic layer 121 is deposited can be formed to have a tapered shape by uniformly filling this space with the hydrocarbon compound layer 122. Therefore, also when the particles 20 are present on the surface of the organic light emitting laminate 110 or the inorganic layer 121, the inorganic layer 121 may be easily deposited without being affected by the particles 20. In addition, a phenomenon in which the particles 20 present on the surface of the organic light emitting laminate 110 or the inorganic layer 121 peel off may be prevented. Therefore, peeling of the inorganic layer 121 (or peeling of the thin film) caused by the peeled particles 20 can be prevented, and deterioration and reduction in durability of the organic light-emitting laminate 110 caused by peeling of the inorganic layer 121 can be prevented.
Herein, the size (diameter or width) of the particles 20 may be a few micrometers (e.g., about 3 micrometers). In order to completely cover the particles 20 without gaps in order to prevent the particles 20 existing on the organic light emitting laminate 110 or the inorganic layer 121 from peeling off, the hydrocarbon compound layer 122 should be deposited at a predetermined thickness or more, and the thickness of the hydrocarbon compound layer 122 may be greater than that of the inorganic layer 121. At this time, the predetermined thickness may be determined according to the size of the particles 20. For example, the thickness of hydrocarbon layer 122 may be at least about 1/4 the size of particles 20, and advantageously is about 1/4-1/2 the size of particles 20, and more advantageously is about 1/4-5 microns (e.g., about 0.5-5 microns). When the thickness of the hydrocarbon compound layer 122 is greater than about 5 micrometers, the total thickness of the thin film encapsulation layer 120 becomes excessively large, and thus there is a problem in that it is difficult to apply the hydrocarbon compound layer 122 to a flexible display and the like. Conversely, when the thickness of the hydrocarbon layer 122 is less than about 1/4 the size of the particle 20, the particle 20 may not be covered without gaps. Meanwhile, the thickness of the inorganic layer 122 may be about 1 micron or less than 1 micron, advantageously about 0.5 micron or less than 0.5 micron, or more advantageously greater than about 0 micron and equal to or less than about 0.2 micron. When the thickness of the inorganic layer 122 is greater than about 1 μm, cracks are caused in the inorganic layer due to a decrease in flexibility when the inorganic layer is bent, and the organic light emitting laminate 110 is adversely affected by permeation of oxygen or moisture caused by such cracks. Accordingly, the thickness of the hydrocarbon compound layer 122 may be about 5 micrometers or less than 5 micrometers for easy application to flexible displays and the like, and the thickness of the inorganic layer 122 may be about 1 micrometer or less than 1 micrometer. Therefore, not only can cracks be prevented in the inorganic layer 122 when the total thickness of the thin film encapsulation layer 120 is reduced, but also moisture permeation resistance can be ensured.
In addition, the hydrocarbon compound layer 122 may be deposited while uniformly filling gaps existing between the surface of the lower layer (the organic light emitting laminate 110 or the inorganic layer 121) and the particles 20 by appropriately controlling the deposition rate. When the hydrocarbon compound layer 122 including an oligomer containing carbon (C) and hydrogen (H) or the hydrocarbon compound layer 122 including amorphous hydrocarbon is deposited via a vapor deposition method such as a PECVD method, the deposition rate can be precisely controlled, and the organic light emitting laminate 110 can be further completely covered without forming a space between the surface of the lower layer and the particles 20 in the hydrocarbon compound layer 122.
Fig. 3 is a cross-sectional view illustrating an organic light emitting device including a hydrocarbon planarization layer according to an exemplary embodiment.
Referring to fig. 3, the organic light emitting device 100 according to an exemplary embodiment may further include a hydrocarbon smoothing layer 115 interposed between the organic light emitting laminate 110 and the thin film encapsulation layer 120. The hydrocarbon planarization layer 115 may be interposed between the organic light emitting laminate 110 and the film encapsulation layer 120, and disposed so as to be in contact with the organic light emitting laminate 110 to cover the organic light emitting laminate 110. In addition, the hydrocarbon planarization layer 115 may be disposed on the surface of the organic light emitting laminate 110, on which the particles 20 may be present, and smooth the deposition surface of the thin film encapsulation layer 120.
The hydrocarbon planarization layer 115 may include carbon (C) and have a stress less than that of the thin film encapsulation layer 120, and thus may relieve the stress of the thin film encapsulation layer 120 and prevent an excessive stress from being applied to the organic light emitting laminate 110. Therefore, damage to the vicinity of the interface of the organic light emitting laminate 110 and peeling of the film encapsulating layer 120 caused by stress applied to the interface between the organic light emitting laminate 110 and the film encapsulating layer 120 can be prevented.
In addition, the hydrocarbon planarizing layer 115 can smooth the deposition surface of the thin film encapsulation layer by completely covering the particles 20 (the particles 20 may not be removed from the surface of the organic light emitting laminate 110 and remain on the organic light emitting laminate 110) without forming spaces between the surface of the organic light emitting laminate 110 and the particles 20. In addition, peeling of the thin film encapsulation layer 120 caused by the particles 20 due to peeling-off of the particles 20 existing on the surface of the organic light emitting laminate 110 can be prevented, and thus, a moisture movement path can be prevented from being formed from the outside at a position formed by peeling-off of the thin film encapsulation layer 120.
Herein, the thickness of the hydrocarbon planarization layer 115 may be equal to or greater than the thickness of the hydrocarbon compound layer 122. Since the hydrocarbon planarizing layer 115 should also completely cover the particles 20 and provide a smooth surface on which the thin film encapsulation layer 120 is formed, the hydrocarbon planarizing layer 115 may have a thickness equal to or greater than that of the hydrocarbon compound layer 122 that completely covers the particles present on the surface of the inorganic layer 121. That is, the thickness of the hydrocarbon planarization layer 115 may be greater than that of the hydrocarbon compound layer 122 in order to smooth the deposition surface of the thin film encapsulation layer 120, thereby more stably depositing the thin film encapsulation layer 120 while having good adhesive properties.
FIG. 4 is a flow chart illustrating a method for manufacturing a thin film encapsulation layer according to another embodiment of the present invention.
Referring to fig. 4, a method for manufacturing a thin film encapsulation layer according to an exemplary embodiment will be described in detail, and matters overlapping with portions previously described with respect to an organic light emitting device according to an exemplary embodiment will be omitted.
A method for manufacturing a thin film encapsulation layer according to another exemplary embodiment may include: loading a substrate 10 into a chamber 210, an organic light emitting laminate 110 being formed on the substrate 10 (step S100); depositing an inorganic layer 121 on the organic light emitting laminate 110 (step S200); and depositing a hydrocarbon compound layer on the inorganic layer 121 (step S300), wherein the deposition of the inorganic layer 121 (step S200) and the deposition of the hydrocarbon compound layer (step S300) may be performed under a vacuum atmosphere.
First, a substrate 10 is loaded into a chamber 210 (step S100), and an organic light emitting laminate 110 is formed on the substrate 10. The organic light emitting laminate 110 has a problem that it is very susceptible to external moisture or oxygen and weak in heat resistance, and thus the substrate 10 on which the organic light emitting laminate is formed is loaded into the chamber 210 so as to form (or deposit) a thin film encapsulation (layer) for protecting the organic light emitting laminate 110. At this time, the substrate loaded into the chamber 210 may be supported by the substrate support part 220. Herein, the chamber 210 may be a vacuum chamber, and the method for manufacturing the thin film encapsulation layer of the exemplary embodiment may further include forming a vacuum inside the chamber 210.
Subsequently, the inorganic layer 121 is deposited on the organic light emitting laminate 110 (step S200). When the substrate 10 on which the organic light emitting laminate is formed is loaded into the chamber 210, a vacuum atmosphere is formed inside the chamber 210, and then the inorganic layer 121 may be deposited through a vapor deposition method. The inorganic layer 121 may suppress penetration of moisture or oxygen since the density of the thin film is densely formed, and most of the moisture and oxygen may be prevented from penetrating into the organic light emitting laminate 110 by the inorganic layer 121. In (1)
Subsequently, a hydrocarbon compound layer is deposited on the inorganic layer 121 (step S300). After depositing the inorganic layer 121 on the organic light emitting laminate 110, a hydrocarbon compound layer may be deposited through a vapor deposition method under a vacuum atmosphere. The hydrocarbon compound layer may include carbon (C) and hydrogen (H), and may prevent or suppress vertical pinholes generated in the first deposited lower inorganic layer 121 from being transferred to the second deposited upper inorganic layer 121. In addition, the pin holes formed in the lower inorganic layer 121 may be prevented from being connected to the pin holes formed in the upper inorganic layer 121.
Accordingly, the deposition of the inorganic layer 121 (step S200) and the deposition of the hydrocarbon compound layer (step S300) may be performed under a vacuum atmosphere, and introduction of particles on the deposition surface on the organic light emitting laminate 110 under normal pressure (or atmospheric pressure) may be prevented. In addition, a vacuum pressure and atmospheric pressure replacement chamber may not be required, and the inorganic layer 121 and the hydrocarbon compound layer may also be laminated in situ in a single chamber. Therefore, the occupation area of the entire apparatus can be reduced, and it is possible to easily reduce the apparatus manufacturing cost and secure a space for a clean room.
Herein, the order of depositing the inorganic layer 121 and the hydrocarbon compound layer is not particularly limited, but it may be necessary to deposit the inorganic layer 121 having good moisture permeability so as to be in contact with the organic light emitting laminate 110.
The method for manufacturing an encapsulation film according to an exemplary embodiment may further include depositing an inorganic layer 121 on the hydrocarbon compound layer (step S400).
In addition, the inorganic layer 121 may be further deposited on the hydrocarbon compound layer (step S400). The moisture permeation resistant characteristic of the hydrocarbon compound layer is inferior to that of the inorganic layer 121, and thus the moisture permeation resistant characteristic of the thin film encapsulation layer can be further improved by further depositing the inorganic layer 121 on the hydrocarbon compound layer so as to prevent the hydrocarbon compound layer from being exposed to the outside. In an exemplary embodiment, the hydrocarbon compound layer 122, which has ductility by including carbon (C) and has moisture permeation resistance by having a dense structure, is interposed between the inorganic layers 121, and thus, a thin film encapsulation layer having good moisture permeation resistance characteristics may be manufactured by using only a three-layer structure of the inorganic layer 121/hydrocarbon compound layer/inorganic layer. That is, the hydrocarbon compound layer has moisture permeation resistance while suppressing pinhole enlargement between the inorganic layers 121, and thus moisture or oxygen can be effectively prevented from permeating from the outside, and thus sufficient good moisture permeation characteristics can be secured by using only the three-layer structure of the inorganic layer 121/hydrocarbon compound layer/inorganic layer. In addition, even when particles exist on the surface of the organic light emitting laminate 110 or the inorganic layer 121, the space of the reverse taper shape formed in the region under the particles on the surface of the organic light emitting laminate 110 or the inorganic layer 121 is uniformly filled with the hydrocarbon compound layer, and thus, the surface (or shape) of the hydrocarbon compound layer 122 deposited by the inorganic layer 121 may be allowed to have a taper shape. Therefore, even when the particles 20 are present on the surface of the organic light emitting laminate 110 or the inorganic layer 121, the inorganic layer 121 may be easily deposited without being affected by the particles 20, and thus, it may not be necessary to deposit the inorganic layer 121 and the hydrocarbon compound layer multiple times in a structure of three or more layers of the inorganic layer 121/the hydrocarbon compound layer/the inorganic layer 121. Accordingly, the cost for manufacturing the thin film encapsulation layer can be reduced by reducing the number of times the inorganic layer 121 and/or the hydrocarbon compound layer is laminated.
Fig. 5 is a conceptual diagram for describing a deposition process of a hydrocarbon compound layer according to another exemplary embodiment.
Referring to fig. 5, the deposition of the hydrocarbon compound layer (step S300) may include: providing a vapor phase source material comprising carbon (C) and hydrogen (H); providing a process gas containing a source material and a carrier gas for carrying the source material into the chamber 210; and forming plasma 40 inside the chamber 210 and polymerizing the oligomer containing carbon (C) and hydrogen (H).
In depositing the hydrocarbon compound layer (step S300), a vapor-phase source material containing carbon (C) and hydrogen (H) may be first provided. Herein, the source material solution 30 containing carbon (C) and hydrogen (H) is bubbled and thus a gas-phase source material may be generated. At this time, the temperature of the source container 230 containing the source material solution 30 is controlled and bubbled through the carrier gas, and thus a gas-phase source material may be generated. The thus-produced vapor-phase source material is introduced into a supply pipe 242 connected to the chamber 210, and is ejected through an ejection part 241 such as a shower head, and thus can be provided (supplied) into the chamber 210. Meanwhile, a method for supplying the gas-phase source material is not limited thereto, but various vaporization methods other than the bubbling method may be used, and various types of vaporizers may be used to supply the gas-phase source material.
Next, a process gas containing a source material (i.e., a gas-phase source material) and a carrier gas for carrying the source material may be supplied into the chamber 210. The carrier gas may be used not only to bubble the source material solution 30, but also to facilitate movement of the gas-phase source material, and may carry the gas-phase source material. The gas-phase source material is in an unstable state that is not easily liquefied, and is not easily moved because it is heavier than the gas state, and thus can be carried (supplied) into the chamber 210 via the carrier gas. As such, the hydrocarbon compound layer may be deposited by supplying a process gas including a vapor phase source material and a carrier gas into the chamber 210.
In addition, oligomers containing carbon (C) and hydrogen (H) may be polymerized by forming plasma 40 inside chamber 210. The hydrocarbon compound layer may be deposited by forming a plasma 40 inside the chamber 210, and the monomer containing carbon (C) and hydrogen (H) is polymerized and cured into an oligomer through the plasma 40. When the oligomer is polymerized by using the plasma 40, polymerization is easily performed and the hydrocarbon compound layer can be densely deposited, and thus, resistance to moisture permeation of the hydrocarbon compound layer can be secured. At this time, hydrogen (H) may passivate the molecular structure of the unstable carbon chain, the hydrocarbon compound layer may be stabilized in the form of a thin film, and the reliability of the hydrocarbon compound layer may be secured.
The source material may comprise an aliphatic hydrocarbon. The aliphatic hydrocarbon is composed of only carbon (C) and hydrogen (H), and may not only not damage the organic light emitting laminate 110 but also affect the inorganic layer 121. In addition, aliphatic hydrocarbons have high chemical reactivity, and thus may be easily polymerized into oligomers and may easily deposit a hydrocarbon compound layer.
In addition, the source material may consist of only carbon (C) and hydrogen (H) and may include at least any one of the following: methane, ethane, propane, butane, pentane, hexane, heptane, octane, hexadecane, ethylene, propylene, butene, pentene, hexene, isoprene, acetylene, cyclopropane, cyclobutane, cyclopentane, cyclohexane, butylcyclohexane, isopropylcyclohexane, cycloheptane, cyclooctane, 1-hexene, 2-methyl-1-hexene, 5-methyl-1-hexene, or butadiene. Such source materials are composed of carbon (C) and hydrogen (H), and it is not necessary to separate (or remove) unnecessary elements, and the unnecessary elements can be prevented from acting as impurities or particles. In addition, the source material is composed of only carbon (C) and hydrogen (H), and the monomer containing carbon (C) and hydrogen (H) can be easily polymerized and can be easily polymerized into a dense oligomer.
Fig. 6a to 6c are conceptual diagrams for describing particle coverage characteristics according to a volume ratio occupied by helium and nitrogen in the entirety of the carrier gas and the discharge gas supplied into the chamber according to another exemplary embodiment, fig. 6a illustrates a case where the volume ratio of helium and nitrogen is less than about 50%, fig. 6b illustrates a case where the volume ratio of helium and nitrogen is about 50%, and fig. 6c illustrates a case where the volume ratio of helium and nitrogen is greater than about 50%.
Referring to fig. 6a to 6c, the deposition of the hydrocarbon compound layer (step S300) may further include including hydrogen (H) gas 2 ) Helium (He) and nitrogen (N) 2 ) Discharge gas of inert gas in either the 2 nd cycle or more than the 2 nd cycle is supplied into the chamber 210.
When the oligomer containing carbon (C) and hydrogen (H) is polymerized, hydrogen (H) is contained 2 ) Helium (He) and nitrogen (N) 2 ) Or inert gas (e.g., neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), or radon in cycle 2 or more than cycle 2
Figure BDA0002192876040000121
Gas (oganesson, Og)) discharge gas may be supplied into the chamber 210 while forming the plasma 40 inside the chamber 210. That is, the plasma 40 may be generated by injecting a discharge gas into the chamber 210. Accordingly, the plasma 40 may be easily generated, oligomers containing carbon (C) and hydrogen (H) may be easily fused, and a more dense hydrocarbon compound layer may be deposited. Herein, the inert gas in the 2 nd period or more than the 2 nd period may mean an inert gas in the 2 nd period or more than the 2 nd period of the periodic table, and may be a group 18 element (inert gas) in the 2 nd period of the periodic table.
At this time, hydrogen (H) of the discharge gas 2 ) It may also be used to passivate the labile carbon chains in the hydrocarbon compound layer. Since only hydrogen (H) is contained in the gas-phase source material, passivation may be insufficient, and thus hydrogen (H) of the gas may be discharged 2 ) Supplementing the hydrogen atom (H) for deactivating the coupling of the labile carbon chains, so that the carbon chains are dividedThe sub-structures may be passivated. For example, since hydrogen (H) contained in the gas-phase source material is in a state of being coupled with carbon (C), it may not be easy to passivate the carbon chain coupling. Thus, hydrogen (H) may be used without combining with carbon (C) 2 ) To supplement the insufficient hydrogen atoms (H) for deactivating the coupling of the labile carbon chains.
In addition, helium (He) and nitrogen (N) of the discharge gas 2 ) A vapor phase source material that may be used to assist in filling between the organic light emitting laminate 110 and the particles or between the inorganic layer 121 and the particles (hereinafter, between the surface of the lower layer and the particles). The detailed description thereof will be described later in detail.
The vapor phase source material is deposited on the organic light emitting laminate 110 or the inorganic layer while having directionality, and thus may not be easily filled between the surface of the lower layer (the organic light emitting laminate 110 or the inorganic layer 121) and the particles 20, and may have poor particle coverage (or wettability).
Thus, helium (He) and nitrogen (N) 2 ) The volume ratio occupied in the entirety of the carrier gas and the discharge gas supplied into the chamber 210 may be at least about 50% and less than about 100%, advantageously about 50% to 90%, more advantageously greater than about 50% and equal to or less than about 80%. Herein, the carrier gas may include an inert gas, and may be, for example, argon (Ar), helium (He), and nitrogen (N) 2 ). The entirety of the carrier gas and the discharge gas supplied into the chamber 210 may contain helium (He) and nitrogen (N) 2 ). Helium (He) and nitrogen (N) 2 ) A gas phase source material that may be used to assist the surface of the lower layer (organic light emitting laminate 110 or inorganic layer 121) and the filling between particles, and may improve the particle coverage characteristics of the hydrocarbon compound layer.
The inert gas in the 2 nd period or more than the 2 nd period contained in the entirety of the carrier gas and the discharge gas supplied into the chamber 210 has not only a large particle size but also a large atomic weight, and thus may not diffuse into a small space between the surface of the lower layer (the organic light emitting laminate 110 or the inorganic layer 121) and the particles. In addition, the inert gas may come into contact (collide) with the surface of the lower layer (the organic light-emitting laminate 110 or the inorganic layer 121)Damaging the lower layer (organic light-emitting laminate 110 or inorganic layer 121). That is, the volume ratio of the inert gas (e.g., argon) in the 2 nd cycle or more than the 2 nd cycle is larger than that of helium (He) and nitrogen (N) 2 ) The coverage property decreases at the volume ratio of (a), as shown in fig. 6 a. In addition, hydrogen (H) contained in the entirety of the carrier gas and the discharge gas supplied into the chamber 210 has too high reactivity, and may affect the thin film characteristics of the lower layer (the organic light emitting laminate 110 or the inorganic layer 121)1 when excessively supplied.
However, helium (He) is not only one kind of inert gas, but also has an extremely small particle diameter and a small atomic weight, and thus can penetrate (or diffuse) into even a small space between the surface of the lower layer (the organic light-emitting laminate 110 or the inorganic layer 121) and the particles without affecting (damaging) the lower layer (the organic light-emitting laminate 110 or the inorganic layer 121). Thus, the helium (He) gas may push the gas phase source material between the surface of the lower layer (the organic light emitting laminate 110 or the inorganic layer 121) and the particles, and guide the gas phase source material to be filled between the surface of the lower layer (the organic light emitting laminate 110 or the inorganic layer 121) and the particles. Therefore, the organic light emitting laminate 110 or the inorganic layer 121 and the particles can be completely covered with the hydrocarbon compound layer without forming a space between the surface of the lower layer (the organic light emitting laminate 110 or the inorganic layer 121) and the particles. Therefore, a phenomenon in which particles present on the surface of the organic light emitting laminate 110 or the inorganic layer 121 peel off can be prevented. Therefore, peeling of the inorganic layer 121 (or peeling of the film encapsulating layer) caused by the peeled particles 20 can be prevented, and deterioration and reduction in durability of the organic light emitting laminate 110 caused by peeling of the inorganic layer 121 can be prevented. In addition, nitrogen (N) 2 ) May have the same characteristics as helium (he).
In the case of fig. 6a, helium (He) and nitrogen (N) 2 ) Is less than the volume ratio of other gases such as the 2 nd cycle or more than the inert gas (e.g., argon gas) in the 2 nd cycle, and therefore, the particle coverage property is lowered and free gaps are generated in the boundary between the hydrocarbon compound layer on the organic light emitting laminate 110 or the inorganic layer 121 and the hydrocarbon compound layer on the particles. However, in the case of FIGS. 6b and 6c, helium gasThe volume ratio of (He) is equal to or greater than that of the other gas, and therefore, the hydrocarbon compound layer is continuously formed (or deposited) even on the particles, and the surface of the organic light emitting laminate 110 or the inorganic layer 121 can be completely covered without forming spaces (or gaps) between the surface of the lower layer (the organic light emitting laminate 110 or the inorganic layer 121) and the particles.
That is, when helium (He) and nitrogen (N) are used 2 ) Helium (He) and nitrogen (N) when the volume ratio occupied in the entirety of the carrier gas and the discharge gas supplied into the chamber 210 is less than about 50% 2 ) Is relatively smaller than other gases, and thus helium (He) and/or nitrogen (N) 2 ) May not diffuse freely due to the directionality of other gas or gases (e.g., the direction of gravity) and may not push vapor phase source material between the underlying layer (organic light emitting laminate 110 or inorganic layer 121) and the particles. Therefore, the gas phase source material cannot be guided to fill between the surface of the lower layer (the organic light emitting laminate 110 or the inorganic layer 121) and the particles, and thus, the coverage characteristics are degraded. In addition, the other gas or gases have a greater mass and may therefore also damage the underlying layer (organic light-emitting laminate 110 or inorganic layer 121) when in contact with the surface of the underlying layer (organic light-emitting laminate 110 or inorganic layer 121). Conversely, when helium (He) and nitrogen (N) are used 2 ) Occupies a volume ratio of more than about 90%, and has only small particle size and small mass of helium (He) and nitrogen (N) 2 ) The number of the other one or more gases having large particle size and mass becomes relatively extremely small, and therefore, the gas-phase source material supplied into the chamber 210 may not be efficiently activated (or excited). Therefore, the plasma 40 cannot be generated (discharged), and the plasma 40 cannot be stably formed.
Thus, helium (He) and nitrogen (N) 2 ) A volume ratio occupied in the entirety of the carrier gas and the discharge gas supplied into the chamber 210 may be at least about 50% and less than about 100%. Accordingly, the hydrocarbon compound layer may completely cover the surface of the organic light emitting laminate 110 or the surface of the inorganic layer 121 and the particles without forming a space between the surface of the lower layer and the particles.
As such, in exemplary embodiments, the thin film encapsulation layer is formed by alternately laminating an inorganic layer having moisture permeation resistant property and a hydrocarbon compound layer having flexible property on the organic light emitting layer, and thus, the thin film encapsulation layer may be flexible and have very good moisture permeation resistant efficiency. In addition, when the particles are present on the surface of the organic light-emitting laminate or the inorganic layer, the hydrocarbon compound layer may completely cover the surface of the organic light-emitting laminate or the inorganic layer without forming spaces between the surface of the organic light-emitting laminate and the particles or between the surface of the inorganic layer and the particles. Therefore, the inorganic layer (or the film encapsulating layer) can be prevented from peeling off when the particles are peeled off from the surface of the organic light-emitting laminate or the surface of the inorganic layer, and deterioration and reduction in durability of the organic light-emitting laminate caused by peeling off of the inorganic layer can be prevented. In addition, the hydrocarbon compound layer can be deposited via a vapor deposition method in the same manner as the inorganic layer, and therefore, when the overall thickness of the hydrocarbon compound layer is made uniform, not only can the thickness of the hydrocarbon compound layer be reduced, but also damage to the organic light emitting laminate due to the use of a solvent can be prevented. In addition, the deposition process for the hydrocarbon compound layer may be performed under a vacuum atmosphere, and introduction of particles on the deposition surface on the organic light emitting laminate under normal pressure (or atmospheric pressure) may be suppressed or prevented. In addition, a vacuum pressure and atmospheric pressure replacement chamber may not be required, and the inorganic layer and the hydrocarbon compound layer may also be laminated in situ in a single chamber. Therefore, the occupied space of the entire apparatus can be reduced, and it is possible to easily reduce the apparatus manufacturing cost and secure the clean room space. Meanwhile, the particle coverage characteristics of the hydrocarbon compound layer can be adjusted by adjusting the ratio of helium gas among the entirety of the carrier gas and the discharge gas supplied into the chamber, and the particles can be completely covered without a gap even at a small thickness.
The meaning of the term "in.. above" used in the above description includes the case of direct contact and the case of not being directly contacted but being disposed facing the upper portion or the lower portion, may include not only the case of being disposed facing the entire upper surface and the lower surface, but also the case of being disposed partially facing the surface, and the term is used as meaning of facing to and separated from the position or directly contacting the upper surface or the lower surface of the surface.
Although the preferred exemplary embodiments have been described so far, the embodiments are not limited thereto. Accordingly, it will be readily understood by those skilled in the art that various modifications and equivalent changes may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims. Therefore, the technical scope of the present invention will be determined by the technical scope of the appended claims.

Claims (10)

1. An organic light emitting device comprising:
an organic light emitting laminate formed on the substrate; and
a thin film encapsulation layer disposed on the organic light emitting laminate and in which an inorganic layer and a hydrocarbon compound layer are alternately laminated,
wherein the hydrocarbon compound layer comprises oligomers containing carbon and hydrogen.
2. The organic light-emitting device according to claim 1, wherein a thickness of the hydrocarbon compound layer is larger than a thickness of the inorganic layer.
3. The organic light-emitting device of claim 1, further comprising a hydrocarbon planarizing layer interposed between the organic light-emitting laminate and the thin film encapsulation layer.
4. A method for making a thin film encapsulation layer, comprising:
loading a substrate on which an organic light emitting laminate is formed into a chamber;
depositing an inorganic layer on the organic light emitting laminate; and
depositing a hydrocarbon compound layer on the inorganic layer, wherein
The deposition of the inorganic layer and the deposition of the hydrocarbon compound layer are performed by using a vapor deposition method under a vacuum atmosphere,
wherein the hydrocarbon compound layer comprises oligomers containing carbon and hydrogen.
5. The method for manufacturing a thin film encapsulation layer according to claim 4, further comprising depositing an inorganic layer on the hydrocarbon compound layer.
6. A method for manufacturing a thin film encapsulation layer according to claim 4, wherein the deposition of the hydrocarbon layer comprises:
providing a source material comprising a gaseous phase of carbon and hydrogen;
supplying a process gas including the source material and a carrier gas for carrying the source material into the chamber; and
a plasma is formed inside the chamber to polymerize the oligomer.
7. A method for manufacturing a thin film encapsulation layer according to claim 6 wherein said source material comprises an aliphatic hydrocarbon.
8. A method for manufacturing a thin film encapsulation layer according to claim 6 wherein said source material comprises at least any one of: methane, ethane, propane, butane, pentane, hexane, heptane, octane, hexadecane, ethylene, propylene, butene, pentene, hexene, isoprene, acetylene, cyclopropane, cyclobutane, cyclopentane, cyclohexane, butylcyclohexane, isopropylcyclohexane, cycloheptane, cyclooctane, 1-hexene, 2-methyl-1-hexene, 5-methyl-1-hexene, or butadiene.
9. The method for fabricating a thin film encapsulation layer according to claim 6, wherein the depositing of the hydrocarbon compound layer further comprises supplying a discharge gas comprising hydrogen, helium, nitrogen, and an inert gas in cycle 2 or more into the chamber.
10. The method for manufacturing a thin film encapsulation layer according to claim 9, wherein a volume ratio occupied by helium gas and nitrogen gas in the entirety of the carrier gas and the discharge gas supplied into the chamber is at least 50% and less than 100%.
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