CN111129263A - White light LED light source with infrared band added in spectrum - Google Patents
White light LED light source with infrared band added in spectrum Download PDFInfo
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- CN111129263A CN111129263A CN201911391502.0A CN201911391502A CN111129263A CN 111129263 A CN111129263 A CN 111129263A CN 201911391502 A CN201911391502 A CN 201911391502A CN 111129263 A CN111129263 A CN 111129263A
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- 238000001228 spectrum Methods 0.000 title claims abstract description 37
- 239000000843 powder Substances 0.000 claims abstract description 42
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 15
- 229910003564 SiAlON Inorganic materials 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- 108010043121 Green Fluorescent Proteins Proteins 0.000 claims description 4
- 229910020440 K2SiF6 Inorganic materials 0.000 claims description 2
- 229910010938 LiGa5O8 Inorganic materials 0.000 claims description 2
- 229910003669 SrAl2O4 Inorganic materials 0.000 claims description 2
- 239000005084 Strontium aluminate Substances 0.000 claims description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 2
- 238000009877 rendering Methods 0.000 abstract description 8
- 230000008635 plant growth Effects 0.000 abstract description 3
- 239000003292 glue Substances 0.000 abstract description 2
- 238000000295 emission spectrum Methods 0.000 description 5
- 239000000084 colloidal system Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011324 bead Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a white light LED light source with an infrared band added in a spectrum, which consists of an LED bracket, an ultraviolet or near-ultraviolet LED chip (380nm-420nm) and mixed fluorescent powder glue (infrared, red, green and blue), wherein the ultraviolet or near-ultraviolet LED chip emits light to excite a fluorescent powder layer on the surface of the ultraviolet or near-ultraviolet LED chip to generate four-band mixed white light of near infrared, red, green and blue. The light source can obtain high color rendering index, and the generated infrared light can promote plant growth and can be used for other special purposes requiring infrared bands. Because the infrared fluorescent powder has higher thermal stability compared with an infrared chip, the infrared fluorescent powder is not easy to generate wavelength drift in use, which cannot be realized by any other light-emitting modes.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a white light LED light source which uses infrared fluorescent powder and is used for increasing an infrared band.
Background
At present, energy is increasingly scarce, and compared with the traditional fluorescent lamp and incandescent lamp, the white light LED as a novel lighting source has the remarkable advantages of energy conservation, environmental protection, short response time, long service life and the like. The LED industry is currently rapidly developing and LED light sources have become commonly used in professional lighting applications in addition to the general lighting market. The white light LED is mainly applied to the professional fields of photographic illumination, color detection, plant growth and the like. The white LED mainly has several light emitting modes.
1. The white light is generated by mixing the light emitted by the red, green and blue chips or by mixing the light emitted by the blue and yellow chips.
2. The white light chip is a multi-layer quantum well structure which can emit light with different colors and is deposited in the same epitaxial wafer in sequence.
3. The blue chip is matched with the yellow fluorescent powder, and the blue light emitted by the chip excites the yellow light emitted by the fluorescent powder to mix to generate white light.
4. The blue chip is matched with the red and green fluorescent powder, and the blue light emitted by the chip excites the red light and the green light emitted by the fluorescent powder to be mixed to obtain white light.
The first two ways are to obtain white light by directly adopting chip luminescence, but the attenuation of chips or quantum wells with different wave bands has difference, so that an unstable phenomenon exists in use, and chromaticity shift (the ratio of red, green and blue light intensity is changed) is easily caused. Moreover, the chip has narrow light-emitting peak and discontinuous spectrum. These two approaches have gradually been phased out.
The third method is to obtain white light by using a method of adding fluorescent powder to a chip, and is also the most common method for manufacturing a white light LED at present, namely manufacturing the white light LED by using a scheme of adding yellow fluorescent powder and a blue light chip. In some professional fields, there is a higher requirement for the color development of the light source, so the fourth method mentioned above is also widely used to obtain white light by using a chip plus fluorescent powder method. With the further demand for spectrum range and color development, ultraviolet or near-ultraviolet LED chips have been used to excite red, green and blue phosphors to obtain white light, which is referred to as a full-spectrum light source in the industry.
However, the above-mentioned white lights lack infrared band relative to sunlight. The special requirements of adding an infrared band such as plant illumination color detection and video monitoring cannot be met.
Disclosure of Invention
The invention aims to increase the infrared band part on the basis of obtaining full spectrum white light by exciting red, green and blue fluorescent powder by the existing ultraviolet or near ultraviolet LED chip and maintain high color rendering index (CRI >95, and all from R1 to R15 are more than 90). The near ultraviolet or near ultraviolet is utilized to excite the fluorescent powder to generate tricolor light, and the infrared band is increased to be closer to sunlight while the color is mixed to form white light.
In order to achieve the purpose, the white light LED light source provided by the invention comprises an LED bracket, an ultraviolet or near-ultraviolet LED chip and mixed fluorescent powder glue. The light emitted by the ultraviolet or near ultraviolet LED chip is used for exciting the fluorescent powder layer on the surface of the chip to generate four-band mixed white light of near infrared, red, green and blue. The LED chip is fixed on the LED support, the electrodes are communicated, fluorescent powder colloid with the mixture of the infrared, red, green and blue colors is coated on the surface of the LED chip in a coating or dispensing mode, the fluorescent powder is excited by near ultraviolet or near ultraviolet to generate four colors of light, and the color mixture forms white light.
A white light LED light source with an infrared band added in a spectrum is characterized in that red, green and blue fluorescent powder is excited by an ultraviolet or near ultraviolet LED chip to be mixed into white light, or the red and green fluorescent powder is excited by a blue LED chip to be mixed into the white light; the method is characterized in that: the white light LED light source also comprises infrared fluorescent powder excited by the ultraviolet or near ultraviolet LED chip or the blue light LED chip, so that the white light LED light source has an infrared band spectrum, the luminous intensity at 780nm is greater than 20% of the highest point of the relative spectrum, and the spectrum of the white light LED light source is close to the solar spectrum.
The chemical composition of the infrared fluorescent powder is as follows: (Y, Gd)3Ga5O12Cr, peak wavelength of 700nm to 750nm, and LiGa5O8Cr, peak wavelength 715nm, Y3Al5O12Cr, peak wavelength of 707nm, SrAl2O4Cr, and one or a mixture of more of the peak wavelength 790 nm.
Wherein the wavelength of the light-emitting peak value of the ultraviolet or near ultraviolet LED chip is 380nm-420 nm.
The red phosphor types include: CaAlSi (ON))3:Eu、α-SiAlON:Eu、K2SiF6One or more of Mn.
The green phosphor comprises β -SiAlON, Eu and Lu3Al5O12:Eu、La2Si6N11One or more of Ce.
The blue phosphor species include: (Sr, Ba)10(PO4)6Cl2:Eu。
Preferably: the infrared, red, green and blue fluorescent powder has the chemical formula of (Y, Gd)3Ga5O12:Cr、CaAlSi(ON)3:Eu、β-SiAlON:Eu、(Sr,Ba)10(PO4)6Cl2:Eu。
The light-emitting peak wavelength of the blue light chip is 440nm-460 nm.
Preferably: the infrared, red and green fluorescent powder has the chemical formula of (Y, Gd)3Ga5O12:Cr、CaAlSi(ON)3:Eu、Lu3Al5O12:Eu。
Therefore, the infrared fluorescent powder is added on the basis that the ultraviolet or near-ultraviolet LED chip excites the red, green and blue fluorescent powder to obtain white light, and the light-emitting spectrum of the infrared fluorescent powder is closer to the sunlight. Because the infrared fluorescent powder has higher thermal stability compared with an infrared chip, the infrared fluorescent powder is not easy to generate wavelength drift in use, and is more suitable for meeting increasingly severe professional irradiation requirements. After the infrared fluorescent powder is added, the color developing material not only has the spectrum of an infrared band, but also improves the color developing index.
The invention has the advantages that:
1. the invention relates to a white light LED light source with high color rendering index, because the peak wavelength of the used chip is 380nm-420nm, most of the light generated by the LED chip is used for exciting fluorescent powder, and the high color rendering index (CRI >95, and all the light from R1 to R15 is more than 90) can be obtained, which is far more than the color rendering index generated by matching other blue light chips with the fluorescent powder.
2. The white light generated by the invention is obtained by near ultraviolet or near ultraviolet excitation, and has good color temperature uniformity and no facula.
3. The spectrum of the white light LED light source manufactured by the invention contains near infrared band near solar spectrum, and the white light LED light source can be suitable for plant growth and other special purposes requiring infrared band.
4. The white light LED light source manufactured by the invention introduces the infrared fluorescent powder, but has no influence on the production process and the yield.
Drawings
Fig. 1 is a schematic structural view of a patch LED lamp bead in embodiment 1 of the present invention.
Fig. 2 is a comparison graph of a white light spectrum (Standard LED) formed by mixing a luminescent spectrum (disposed spectrum) of example 1 of the present invention with a blue chip and red and green phosphors, and a white light spectrum (full spectrum LED) formed by mixing an ultraviolet or violet LED chip with red, green and blue phosphors.
Fig. 3 is a schematic structural view of an LED module according to embodiment 2 of the present invention.
FIG. 4 is a comparison of the emission spectrum (deployed spectrum-5000K) of example 2 of the present invention and the spectrum (D50) of CIE D50 standard illuminant.
The specific implementation mode is as follows:
the present invention will be described in further detail with reference to the following detailed description and accompanying drawings.
Example 1
As shown in fig. 1, the white light patch LED lamp bead of the present embodiment includes an LED chip 1, two electrodes 2 and an LED support 3, where the two electrodes are respectively disposed at two ends of the LED support 3 and are used for leading out the positive electrode and the negative electrode of the LED chip 1.
First, a chip 1 (a chip with a peak wavelength of 405nm is used in this embodiment) is fixed on the LED support 3, and two ends of the chip are connected to two electrode plates at the bottom of the substrate through gold wires respectively so as to be conducted with the two electrodes 2.
Then, four color phosphors (the infrared phosphor (Y, Gd) of the present example) containing infrared, red, green, and blue were prepared in a certain ratio3Ga5O12Cr, red fluorescent powder: CaAlSi (ON))3Eu, green phosphor β -SiAlON Eu, blue phosphor Sr, Ba10(PO4)6Cl2Eu), stirring uniformly, and defoaming in vacuum.
Furthermore, the mixed colloid is uniformly coated above the LED chip, and the coating thickness is reasonably set, so that good light color uniformity is ensured, and the LED keeps high light emitting efficiency.
FIG. 2 shows a white light spectrum (common LED) -450nm blue light chip, Lu formed by mixing the emission spectrum of this embodiment (emission spectrum of embodiment 1) and blue chip in combination with red and green phosphors3Al5O12Eu green phosphor, CaAlSi (ON))3Comparing a white light spectrum (full spectrum LED) formed by mixing Eu red fluorescent powder and ultraviolet or purple LED chip excitation red, green and blue fluorescent powder, wherein the color temperature is 3200K. Compared with the other two schemes, the method comprises an infrared band and is wider in spectrum. Calculating metamerism index Mivis less than 0.5 by spectrum.
Table 1 shows the contrast between the color rendering index of the present embodiment and the color rendering index of the ordinary high color rendering LED, the present embodiment can maintain CRI >95, and all of the CRI > 90 from R1 to R15.
TABLE 1
Example 2
As shown in fig. 3, the white LED module of the present embodiment includes an LED module support 1, an LED chip 2, and two electrodes 3, which are respectively disposed at two opposite corners of the LED module support 1 and used for leading out the positive and negative electrodes of the LED chip 2.
Firstly, a plurality of chips 2 (in this embodiment, chips with a peak wavelength of 405 nm) are fixed on an LED module support 1, and through a series-parallel connection mode, two ends of each chip are connected with two pole pieces at the bottom of a substrate through gold wires respectively so as to be conducted with two electrodes 3.
Then, dam enclosing and baking are carried out, and infrared, red, green and blue (the infrared fluorescent powder (Y, Gd) of the embodiment) are prepared according to a certain proportion3Ga5O12Cr, red fluorescent powder: CaAlSi (ON))3Eu, green phosphor β -SiAlON Eu, blue phosphor Sr, Ba10(PO4)6Cl2Eu) mixed colloid of four-color fluorescent powder, stirring uniformly and defoaming in vacuum.
Furthermore, the mixed colloid is uniformly coated above the LED chip, the coating thickness is reasonably set, and good light color uniformity is ensured.
FIG. 4 is a comparison of the emission spectrum of the present example (emission spectrum of example 2) with the spectrum of CIE D50 standard illuminant (D50). Due to the addition of the infrared band, the luminous spectrum of the light source is similar to the spectral distribution of a standard light source in the visible light range (380 nm-780 nm).
The foregoing is a more detailed description of the invention, taken in conjunction with the accompanying detailed description, and it is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (10)
1. A white light LED light source with an infrared band added in a spectrum is characterized in that red, green and blue fluorescent powder is excited by an ultraviolet or near ultraviolet LED chip to be mixed into white light, or the red and green fluorescent powder is excited by a blue LED chip to be mixed into the white light; the method is characterized in that: the white light LED light source also comprises infrared fluorescent powder excited by the ultraviolet or near ultraviolet LED chip or the blue light LED chip, so that the white light LED light source has an infrared band spectrum, the luminous intensity at 780nm is greater than 20% of the highest point of the relative spectrum, and the spectrum of the white light LED light source is close to the solar spectrum.
2. The spectrally enriched white LED light source of claim 1 wherein the chemical composition of the infrared phosphor is: (Y, Gd))3Ga5O12Cr, peak wavelength of 700nm to 750nm, and LiGa5O8Cr, peak wavelength 715nm, Y3Al5O12Cr, peak wavelength of 707nm, SrAl2O4Cr, and one or a mixture of more of the peak wavelength 790 nm.
3. The spectrally enriched white LED light source of claim 1 wherein the chemical composition of the infrared phosphor is: (Y, Gd)3Ga5O12:Cr。
4. The spectrally enriched white LED light source of claim 1 wherein the red phosphor species comprise: CaAlSi (ON))3:Eu、α-SiAlON:Eu、K2SiF6One or more of Mn.
5. The white LED light source with increased infrared band in spectrum as claimed in claim 1, the green phosphor is selected from β -SiAlON Eu, Lu3Al5O12:Eu、La2Si6N11One or more of Ce.
6. The spectrally enriched white LED light source of claim 1 with blue phosphor species comprising: (Sr, Ba)10(PO4)6Cl2:Eu。
7. The spectrally enriched white LED light source of claim 1 wherein the uv or near uv LED chip emission peak wavelength is 380nm to 420 nm.
8. The white LED light source with increased IR band in the spectrum of claim 6, wherein the IR, Red, Green, blue phosphors are of the formula (Y, Gd)3Ga5O12:Cr、CaAlSi(ON)3:Eu、β-SiAlON:Eu、(Sr,Ba)10(PO4)6Cl2:Eu。
9. The spectrally enriched white LED light source of claim 1 wherein the blue chip emission peak wavelength is 440nm to 460 nm.
10. The white LED light source of claim 8 with additional IR bands in the spectrum of the phosphor having the respective chemical formulas (Y, Gd)3Ga5O12:Cr、CaAlSi(ON)3:Eu、Lu3Al5O12:Eu。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201911391502.0A CN111129263A (en) | 2019-12-30 | 2019-12-30 | White light LED light source with infrared band added in spectrum |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911391502.0A CN111129263A (en) | 2019-12-30 | 2019-12-30 | White light LED light source with infrared band added in spectrum |
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| CN111129263A true CN111129263A (en) | 2020-05-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117387756A (en) * | 2023-09-06 | 2024-01-12 | 温州佳易仪器有限公司 | LED standard light source color matching observation box |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784264A (en) * | 2017-01-24 | 2017-05-31 | 广东绿爱生物科技股份有限公司 | A kind of LED light source of promotion completely filled fruit |
| CN108336208A (en) * | 2018-01-22 | 2018-07-27 | 暨南大学 | A kind of spectrophotometer LED light source and preparation method thereof |
| CN109301058A (en) * | 2018-11-29 | 2019-02-01 | 江苏博睿光电有限公司 | Phosphor mixture and light-emitting device thereof |
| CN109346591A (en) * | 2018-09-29 | 2019-02-15 | 国红（深圳）光电科技有限公司 | Optical devices |
-
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- 2019-12-30 CN CN201911391502.0A patent/CN111129263A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784264A (en) * | 2017-01-24 | 2017-05-31 | 广东绿爱生物科技股份有限公司 | A kind of LED light source of promotion completely filled fruit |
| CN108336208A (en) * | 2018-01-22 | 2018-07-27 | 暨南大学 | A kind of spectrophotometer LED light source and preparation method thereof |
| CN109346591A (en) * | 2018-09-29 | 2019-02-15 | 国红（深圳）光电科技有限公司 | Optical devices |
| CN109301058A (en) * | 2018-11-29 | 2019-02-01 | 江苏博睿光电有限公司 | Phosphor mixture and light-emitting device thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117387756A (en) * | 2023-09-06 | 2024-01-12 | 温州佳易仪器有限公司 | LED standard light source color matching observation box |
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Application publication date: 20200508 |