CN109346591A - Optical devices - Google Patents
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- CN109346591A CN109346591A CN201811149145.2A CN201811149145A CN109346591A CN 109346591 A CN109346591 A CN 109346591A CN 201811149145 A CN201811149145 A CN 201811149145A CN 109346591 A CN109346591 A CN 109346591A
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- blue
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- led chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Abstract
The invention belongs to optical technical fields, and in particular to a kind of Optical devices.The Optical devices include: blue-light LED chip；The blue-light LED chip surface or the luminous material layer at pre-determined distance above the blue-light LED chip are set；Wherein, the luminous material layer contains infrared lumious material, and the luminous material layer contains at least one of the red fluorescence powder, green emitting phosphor and yellow fluorescent powder that can be stimulated by blue light.Structure of optical means and preparation process provided by the invention are simple, at low cost, and have the characteristics that excellent unfailing performance, strong antijamming capability, light extraction efficiency are high, cost performance is high.
Description
Technical field
The invention belongs to optical technical fields, and in particular to a kind of Optical devices.
Background technique
In recent years, near infrared light is in face recognition, iris recognition, safety monitoring, laser radar, health detection, 3D sensing
The application in equal fields is rapidly developed, wherein near-infrared LED because its with directive property one system such as good, low in energy consumption and small in size
Column advantage already becomes international research focus.At present there are two types of the main implementations of near-infrared LED, mainstream scheme is to adopt at present
With the implementation of near-infrared semiconductor chip, but the problem of the implementation is primarily present three aspects, first is that, there is cost
The problems such as high and infrared chip technology maturity of > 1000nm is not high；Second is that in practical applications, if only passing through infrared core
Sheet mode realizes specific wavelength device, and degree-of-difficulty factor is higher；Third is that packaged type is limited, packaged type unification.Another reality
Existing scheme is to come out in recent years, and using the implementation of the compound near-infrared light-emitting material of blue chip, which has
The advantages that preparation process is simple, at low cost, luminous efficiency is high, and near-infrared light-emitting material launch wavelength is abundant, can be realized close
The various specific wavelengths of infrared application.
It is applied in fields such as face recognition, iris recognition, safety monitoring, laser radar, health detection, 3D sensings,
Wherein most is the light compensation principle based near infrared light.Other than near infrared light compensation, in above-mentioned field, usually it is also required to
White light is compensated, is presently mainly realized in such a way that infrared light supply is combined with white light source, which exists
Complex process, it is at high cost the problems such as.
Summary of the invention
It is an object of the invention to overcome the above-mentioned deficiency of the prior art, a kind of Optical devices are provided, it is intended to solve existing
The optical device complex process and technical problem at high cost that infrared light supply is combined with white light source.
For achieving the above object, The technical solution adopted by the invention is as follows:
The present invention provides a kind of Optical devices, comprising:
Blue-light LED chip；
The blue-light LED chip surface or the luminous material at pre-determined distance above the blue-light LED chip are set
The bed of material；Wherein, the luminous material layer contains infrared lumious material, and the luminous material layer contain can be stimulated by blue light it is red
At least one of color fluorescent powder, green emitting phosphor and yellow fluorescent powder.
Optical devices provided by the invention are a kind of luminescent devices for integrating white light and infrared light, which includes
Blue-light LED chip and the blue-light LED chip surface or the hair at pre-determined distance above the blue-light LED chip are set
Optical material layer；Wherein, the compound generation infrared spectroscopy of infrared lumious material in blue-light LED chip and luminous material layer, and blue light
In red fluorescence powder, green emitting phosphor and the yellow fluorescent powder that LED chip can be stimulated by blue light simultaneously and in luminous material layer
At least one compound generation white light is realized continuous full spectrum by the way that the infrared light and white light of generation are compound, is produced to reach
The purpose of right light.Compared with the prior art, structure of optical means and preparation process provided by the invention are simple, at low cost, and have
There are the features such as excellent unfailing performance, strong antijamming capability, light extraction efficiency are high, cost performance is high, the transmitting main peak wave of the Optical devices
Length has a good application prospect between 350nm-1100nm in fields such as touch screen, security protection integrated lighting, camera shootings.
Detailed description of the invention
It in order to more clearly explain the technical solutions in the embodiments of the present application, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only some of the application
Embodiment for those of ordinary skill in the art without any creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of Optical devices provided by the invention；
Fig. 2 is a kind of luminous map for Optical devices that the embodiment of the present invention 2 provides；
In figure: 1, blue-light LED chip；2, luminous material layer.
Specific embodiment
In order to which technical problems, technical solutions and advantageous effects to be solved by the present invention are more clearly understood, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain
The present invention is not intended to limit the present invention.
In being described below, for illustration and not for limitation, the specific thin of such as specific structure, technology etc is proposed
Section, to understand thoroughly the embodiment of the present invention.However, it will be clear to one skilled in the art that in these no details
Other embodiments in the application also may be implemented.In other situations, it omits to well-known structure, technology specifically
It is bright, in case unnecessary details interferes description of the invention.
It should be appreciated that when in invention in use, term " includes ", " containing " indicate described feature, entirety, element and/
Or the presence of component, but the presence of one or more of the other feature, entirety, element, component and/or its set is not precluded or adds
Add.
It is also understood that the term used in the present invention is merely for the sake of for the purpose of describing particular embodiments and simultaneously herein
It is not intended to the limitation present invention.As used in the present disclosure, other situations unless the context is clearly specified, it is otherwise single
" one " of number form formula, "one" and "the" are intended to include plural form.
It will be further appreciated that referring to one in the associated item listed in terminology used in the present invention "and/or"
Or multiple any combination and all possible combinations, and including these combinations.It should be noted that when element is referred to as
On " being covered on ", " being set to " or " being located at " another element, it can be directly on the other element or indirectly another at this
On one element.It is to be appreciated that the orientation of the instructions such as term " on ", "lower", "top", "bottom", "inner", "outside" or position are closed
System is merely for convenience of description of the present invention and simplification of the description to be based on the orientation or positional relationship shown in the drawings, rather than indicates
Or imply that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore cannot understand
For limitation of the present invention.
In order to illustrate technical solutions according to the invention, the following is a description of specific embodiments.
Fig. 1 is a kind of structural schematic diagram of Optical devices provided in an embodiment of the present invention, for ease of description, only show with
The relevant part of the embodiment of the present application, as shown in Figure 1, the Optical devices include:
Blue-light LED chip 1；
1 surface of blue-light LED chip or shining at pre-determined distance above the blue-light LED chip 1 are set
Material layer 2；Wherein, the luminous material layer 2 contains infrared lumious material, and the luminous material layer 2 contains and can be swashed by blue light
At least one of red fluorescence powder, green emitting phosphor and yellow fluorescent powder of hair.
Optical devices provided in an embodiment of the present invention are a kind of luminescent device for integrating white light and infrared light, optics dress
It sets including blue-light LED chip and setting on the blue-light LED chip surface or set on pre-determined distance above the blue-light LED chip
The luminous material layer at place；Wherein, the compound generation infrared spectroscopy of infrared lumious material in blue-light LED chip and luminous material layer,
And red fluorescence powder, green emitting phosphor and yellow fluorescence that blue-light LED chip can be stimulated by blue light simultaneously and in luminous material layer
The compound generation white light of at least one of powder realizes continuous full spectrum by the way that the infrared light and white light of generation are compound, to reach
Generate the purpose of natural light.Structure of optical means and preparation process provided in an embodiment of the present invention are simple, at low cost, and have
The features such as unfailing performance is excellent, strong antijamming capability, light extraction efficiency are high, cost performance is high, the transmitting peak wavelength of the Optical devices
Between 350nm-1100nm, had a good application prospect in fields such as touch screen, security protection integrated lighting, camera shootings.
In the Optical devices of the embodiment of the present invention, the blue-light LED chip can be located inside package support, for example,
Be fixed on the bottom of package support, the light-emitting surface of the blue-light LED chip upward, in the light-emitting surface of blue-light LED chip
Upper surface can cover luminous material layer.The number of the blue-light LED chip, which can be 1, can also be multiple.In addition, blue light
It is can permit between LED chip and luminous material layer there are a distance, for example, between blue-light LED chip and luminous material layer
At a distance of pre-determined distance, pre-determined distance can be value range, and other knots can also be arranged between blue-light LED chip and luminous material layer
Structure or material layer.As one of example, the luminous material layer on the blue-light LED chip can be planar structure,
It may be arcuate structure.The beam angle issued from Optical devices can be multiple angles, such as 15 °, 30 °, 60 °, 120 °,
150 ° etc..
Further, in Optical devices provided by the invention, the emission wavelength of the infrared lumious material is 780-
1600nm；The emission wavelength of the red fluorescence powder that can be stimulated by blue light is 600-660nm；It is described can be stimulated by blue light it is green
The emission wavelength of color fluorescent powder is 510-540nm；The emission wavelength of the yellow fluorescent powder that can be stimulated by blue light is 540-
570nm。
Infrared light is obtained in order to match with infrared lumious material, the emission peak wavelength of blue-light LED chip is 420-
470nm, for example, 420nm, 430nm, 440nm, 450nm, 460nm, 470nm.Further, the structure of the blue-light LED chip
It can be planar structure, vertical structure or inverted structure, preferably vertical structure.The blue-light LED chip of vertical structure due to
P, N electrode is located at two sides, it is not easy to current crowding phenomenon occurs, and thermal resistance is lower, it is close can to reach very high electric current
Degree and the uniformity, are especially suitable for applying in high-power Optical devices, and the blue-light LED chip of vertical structure is conducive to enhance
The luminous intensity of exciting light, and then promote the luminous efficiency of the Optical devices of the encapsulation of the present embodiment.
Further, in Optical devices provided by the invention, the general molecular formula of the infrared lumious material is RaQbOc:
(Crx,Yby) or RaQbOc:Crx；Wherein, at least one of R Y, La, Lu and Gd element；
Q is at least one of Ga and Al element；
2.5≤a≤3.5,4.5≤b≤5.5,11.25≤c≤13.25,0.02≤x≤0.30,0.02≤y≤0.30.
Above-mentioned infrared lumious material provided in an embodiment of the present invention is Cr3+The infrared lumious material of activation, the infraluminescence
Cr in material3+Ion is in RaQbOcIt stronger can absorb what blue-light LED chip provided in the crystalline field environment that matrix provides
420nm is to the blue light between 470nm, it is preferable that it is combined using Yb and Cr, Yb potentially acts as sensitizer as doped chemical,
So that Optical devices have higher light emission luminance, and also extend emission spectrum.Infrared hair provided by the embodiments of the present application
Luminescent material has extremely strong absorption in 400nm-480nm, is especially suitable for blue-light LED chip excitation, and transmitting peak position is located at 1000nm-
1100nm, the strong antijamming capability of infrared emission.
Further, in Optical devices provided by the invention, the red fluorescence powder that can be stimulated by blue light includes
(Ca,Sr)AlSiN3:Eu、Sr2Si5N8: at least one of Eu and (Sr, Ca) S:Eu.The green that can be stimulated by blue light is glimmering
Light powder includes (Y, Lu)3(Al,Ga)5O12:Ce、(Sr,Ca)2SiO4: at least one of Eu and β-Siaon:Eu.The energy quilt
Blue light activated yellow fluorescent powder includes Y3Al5O12:Ce、La3Si5N11: at least one of Ce and Ca- α-Sialon:Eu.
Further, in a kind of Optical devices provided in an embodiment of the present invention, the emission peak of the blue-light LED chip
Wavelength is 420-470nm, and the red fluorescence powder that the luminous material layer contains infrared lumious material and can be stimulated by blue light
(Ca,Sr)AlSiN3:Eu.In another Optical devices provided in an embodiment of the present invention, the emission peak of the blue-light LED chip
Value wavelength is 420-470nm, and the luminous material layer contains infrared lumious material and the green emitting phosphor that can be stimulated by blue light
(Y,Lu)3(Al,Ga)5O12:Ce.In another Optical devices provided in an embodiment of the present invention, the hair of the blue-light LED chip
Penetrating peak wavelength is 420-470nm, and the yellow that the luminous material layer contains infrared lumious material and can be stimulated by blue light is glimmering
Light powder Y3Al5O12:Ce.In another Optical devices provided in an embodiment of the present invention, the emission peak of the blue-light LED chip
Wavelength is 420-470nm, and the red fluorescence powder that the luminous material layer contains infrared lumious material and can be stimulated by blue light
(Ca,Sr)AlSiN3: Eu and green emitting phosphor (Y, Lu)3(Al,Ga)5O12:Ce。
Further, the luminous material layer is by the red fluorescence powder that can be stimulated by blue light, green emitting phosphor and Huang
At least one of color fluorescent powder, the infrared lumious material and silica gel composition.I.e. above-mentioned luminous material layer can be by above-mentioned material
Material, which mixes, to be made, and specifically, (red fluorescence powder, green are glimmering for infrared lumious material and the fluorescent powder that can be stimulated by blue light
At least one of light powder and yellow fluorescent powder) it is usually powder, it is conducive to by way of being mixed with silica gel by luminescent material
Uniform fold forms luminous material layer in the upper surface of blue-light LED chip.
Preferably, the gross mass of the red fluorescence powder that can be stimulated by blue light, green emitting phosphor and yellow fluorescent powder with
The mass ratio of the silica gel is (0.8-1.2): 1, further preferably 1:1.The matter of the infrared lumious material and the silica gel
Amount is than being (0.3-0.6): 1, further preferably 0.4:1.In above-mentioned quality than in range, the mixing material of formation both can be with
Form stable luminous material layer, and available better luminous efficiency.
The present invention successively carried out test of many times, and it is further detailed as reference pair invention progress now to lift A partial experiment result
Thin description, is described in detail combined with specific embodiments below.
Embodiment 1
A kind of Optical devices, building block have Blue Semiconductor Devices LED chip and are arranged in Blue Semiconductor Devices LED chip table
The luminous material layer in face.
Wherein, luminous material layer is by infrared lumious material (Y, Lu)2.8(Al,Ga)5O12:Cr0.1,Yb0.1And green emitting phosphor
(Y,Lu)3(Al,Ga)5O12: Ce and silica gel composition, blue-light LED chip wavelength 455nm, structure is planar structure, infraluminescence
Material and green emitting phosphor, which mix to be placed on blue-light LED chip with silica gel, forms luminous material layer.The Optical devices it is infrared
Peak wavelength is 800nm, white light colour temperature 6500K, white light intensity 370lm/sr, infrared intensity 140lm/sr.
Embodiment 2
A kind of Optical devices, building block have Blue Semiconductor Devices LED chip and are arranged in Blue Semiconductor Devices LED chip table
The luminous material layer in face.
Wherein, luminous material layer is by infrared lumious material (Y, Lu)2.95(Al,Ga)5O12:Cr0.03,Yb0.02And red fluorescence
Powder (Ca, Sr) AlSiN3: Eu and silica gel form, and blue-light LED chip wavelength is 455nm, and structure is planar structure, infraluminescence
Material and red fluorescence powder, which mix to be placed on blue-light LED chip with silica gel, forms luminous material layer.The light emitting device it is infrared
Peak wavelength 1026nm, white light colour temperature is in 6500K, white light intensity 410lm/sr, infrared intensity 90lm/sr.The optics
The luminous map of device is as shown in Figure 2.
Embodiment 3
A kind of Optical devices, building block have Blue Semiconductor Devices LED chip and are arranged in Blue Semiconductor Devices LED chip table
The luminous material layer in face.
Wherein, luminous material layer is by infrared lumious material Y3Al5O12: Cr, red fluorescence powder (Ca, Sr) AlSiN3: Eu and green
Color fluorescent powder (Y, Lu)3(Al,Ga)5O12: Ce and silica gel form, and blue-light LED chip wavelength is 444.5nm, and structure is plane
Structure, all luminescent materials, which mix to be placed on blue-light LED chip with silica gel, forms luminous material layer.The light emitting device it is infrared
Peak wavelength 726nm, white light colour temperature can realize continuous full spectrum, be used in multiple color temperatures such as 2700K, 4000K, 6500K
Simulated solar irradiation.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of Optical devices characterized by comprising
Blue-light LED chip；
The blue-light LED chip surface or the luminous material layer at pre-determined distance above the blue-light LED chip are set；
Wherein, the luminous material layer contains infrared lumious material, and to contain the red that can be stimulated by blue light glimmering for the luminous material layer
At least one of light powder, green emitting phosphor and yellow fluorescent powder.
2. Optical devices as described in claim 1, which is characterized in that the general molecular formula of the infrared lumious material are as follows:
RaQbOc:(Crx,Yby) or RaQbOc:Crx；
Wherein, at least one of R Y, La, Lu and Gd element；
Q is at least one of Ga and Al element；
2.5≤a≤3.5,4.5≤b≤5.5,11.25≤c≤13.25,0.02≤x≤0.30,0.02≤y≤0.30.
3. Optical devices as described in claim 1, which is characterized in that the emission peak wavelength of the blue-light LED chip is
420-470nm。
4. Optical devices as described in claim 1, which is characterized in that the emission wavelength of the infrared lumious material is 780-
1600nm；And/or
The emission wavelength of the red fluorescence powder that can be stimulated by blue light is 600-660nm；And/or
The emission wavelength of the green emitting phosphor that can be stimulated by blue light is 510-540nm；And/or
The emission wavelength of the yellow fluorescent powder that can be stimulated by blue light is 540-570nm.
5. Optical devices as described in claim 1, which is characterized in that the red fluorescence powder that can be stimulated by blue light includes
(Ca,Sr)AlSiN3:Eu、Sr2Si5N8: at least one of Eu and (Sr, Ca) S:Eu；And/or
The green emitting phosphor that can be stimulated by blue light includes (Y, Lu)3(Al,Ga)5O12:Ce、(Sr,Ca)2SiO4: Eu and β-
At least one of Siaon:Eu；And/or
The yellow fluorescent powder that can be stimulated by blue light includes Y3Al5O12:Ce、La3Si5N11: in Ce and Ca- α-Sialon:Eu
It is at least one.
6. Optical devices as described in claim 1, which is characterized in that the emission peak wavelength of the blue-light LED chip is
420-470nm, and the red fluorescence powder (Ca, Sr) that the luminous material layer contains infrared lumious material and can be stimulated by blue light
AlSiN3:Eu；Alternatively,
The emission peak wavelength of the blue-light LED chip is 420-470nm, and the luminous material layer contains infrared lumious material
With the green emitting phosphor (Y, Lu) that can be stimulated by blue light3(Al,Ga)5O12:Ce；Alternatively,
The emission peak wavelength of the blue-light LED chip is 420-470nm, and the luminous material layer contains infrared lumious material
With the yellow fluorescent powder Y that can be stimulated by blue light3Al5O12:Ce。
7. Optical devices as described in claim 1, which is characterized in that the emission peak wavelength of the blue-light LED chip is
420-470nm, and the red fluorescence powder (Ca, Sr) that the luminous material layer contains infrared lumious material and can be stimulated by blue light
AlSiN3: Eu and green emitting phosphor (Y, Lu)3(Al,Ga)5O12:Ce。
8. such as the described in any item Optical devices of claim 1-7, which is characterized in that the luminous material layer by it is described can be blue
At least one of light activated red fluorescence powder, green emitting phosphor and yellow fluorescent powder, the infrared lumious material and silica gel
Composition.
9. Optical devices as claimed in claim 8, which is characterized in that the red fluorescence powder that can be stimulated by blue light, green
The mass ratio of the gross mass of fluorescent powder and yellow fluorescent powder and the silica gel is (0.8-1.2): 1.
10. Optical devices as claimed in claim 8, which is characterized in that the quality of the infrared lumious material and the silica gel
Than for (0.3-0.6): 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811149145.2A CN109346591A (en) | 2018-09-29 | 2018-09-29 | Optical devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811149145.2A CN109346591A (en) | 2018-09-29 | 2018-09-29 | Optical devices |
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ID=65308004
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| CN110094641A (en) * | 2019-04-29 | 2019-08-06 | 佛山市国星光电股份有限公司 | A kind of white light LEDs lamp bead and lamp bar and lamps and lanterns |
| CN111129263A (en) * | 2019-12-30 | 2020-05-08 | 北京宇极芯光光电技术有限公司 | White light LED light source with infrared band added in spectrum |
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Application publication date: 20190215 |