CN111129194A - Black bus bar, manufacturing method thereof and full-black photovoltaic module - Google Patents
Black bus bar, manufacturing method thereof and full-black photovoltaic module Download PDFInfo
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- CN111129194A CN111129194A CN201911342513.XA CN201911342513A CN111129194A CN 111129194 A CN111129194 A CN 111129194A CN 201911342513 A CN201911342513 A CN 201911342513A CN 111129194 A CN111129194 A CN 111129194A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 238000003466 welding Methods 0.000 claims abstract description 72
- 229910000531 Co alloy Inorganic materials 0.000 claims abstract description 66
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 22
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 6
- 230000005496 eutectics Effects 0.000 claims description 6
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 229910017052 cobalt Inorganic materials 0.000 description 7
- 239000010941 cobalt Substances 0.000 description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 6
- 239000003973 paint Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000002087 whitening effect Effects 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Life Sciences & Earth Sciences (AREA)
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Abstract
The application discloses black busbar includes: a substrate layer; the first nickel-cobalt alloy layer is positioned on the first surface of the base material layer; and the welding layer is positioned on the second surface of the base material layer, wherein the second surface is opposite to the first surface. It can be seen that the black bus bar in this application has first nickel cobalt alloy layer at the first surface of substrate layer, has the welding layer at the substrate layer second surface, and the colour of first nickel cobalt alloy layer is black, guarantees that the bus bar single face colour is black promptly, and first nickel cobalt alloy layer is the metal level simultaneously, can electrically conduct to when the black bus bar need lap welding and need guarantee that the black face is towards a direction, the welding layer can weld with the black face of black bus bar. In addition, the application also provides a black bus bar manufacturing method and a full-black photovoltaic module with the advantages.
Description
Technical Field
The application relates to the technical field of photovoltaics, in particular to a black bus bar, a manufacturing method of the black bus bar and a full-black photovoltaic module.
Background
The photovoltaic module is a component capable of converting solar energy into electric energy, makes full use of the solar energy, does not generate any pollutants such as wastewater and waste residues in the conversion process, and has important significance for relieving energy crisis and environmental pollution.
The black photovoltaic module occupies an important position in the distributed photovoltaic system, and except for transparent materials, other materials in the black photovoltaic module are black, namely black bus bars are required to be used in the black photovoltaic module. At present, a black surface of a black bus bar is a single-sided paint spraying surface, so that paint falling and whitening of the black bus bar after bending are caused, and the appearance and yield of a full-black photovoltaic module are seriously affected; on the other hand, when two black busbar lap welds of full black photovoltaic module line demand and black face when one direction, because the unable welding of spray paint face and insulating can lead to the unable lap welding of circuit and normally electrically conductive.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
The application aims to provide a black bus bar, a manufacturing method of the black bus bar and a full-black photovoltaic module, so that the single surface of the bus bar is black, and the problems that the black bus bar cannot be conductive and cannot be welded are solved.
In order to solve the above technical problem, the present application provides a black bus bar, including:
a substrate layer;
the first nickel-cobalt alloy layer is positioned on the first surface of the base material layer;
and the welding layer is positioned on the second surface of the base material layer, wherein the second surface is opposite to the first surface.
Optionally, the method further includes:
a second nickel-cobalt alloy layer located on the side surface of the substrate layer and the second surface;
correspondingly, the welding layer is positioned on the surface of the second nickel-cobalt alloy layer, which faces away from the second surface.
Optionally, the welding layer is a tin welding layer or a tin-lead eutectic welding layer.
Optionally, the thickness of the first nickel-cobalt alloy layer ranges from 5 micrometers to 10 micrometers, inclusive.
Optionally, the thickness of the solder layer ranges from 20 microns to 30 microns, inclusive.
The present application further provides a method for manufacturing a black bus bar, including:
obtaining a substrate layer;
manufacturing a first nickel-cobalt alloy layer on the first surface of the base material layer;
and manufacturing a welding layer on the second surface of the substrate layer, wherein the second surface is opposite to the first surface.
Optionally, the method further includes:
manufacturing a second nickel-cobalt alloy layer on the side surface and the second surface of the substrate layer;
correspondingly, the step of manufacturing the welding layer on the second surface of the base material layer comprises the following steps:
and manufacturing the welding layer on the surface of the second nickel-cobalt alloy layer, which is opposite to the second surface.
Optionally, the manufacturing the first nickel-cobalt alloy layer on the first surface of the substrate layer includes:
and manufacturing a first nickel-cobalt alloy layer on the first surface of the base material layer by using an electroplating method.
Optionally, the step of manufacturing a welding layer on the second surface of the substrate layer includes:
and manufacturing a welding layer on the second surface of the base material layer by using an electroplating method.
The application also provides a complete black photovoltaic module, complete black photovoltaic module includes any one of the aforesaid black busbar.
The present application provides a black bus bar, including: a substrate layer; the first nickel-cobalt alloy layer is positioned on the first surface of the base material layer; and the welding layer is positioned on the second surface of the base material layer, wherein the second surface is opposite to the first surface. It can be seen that the black bus bar in this application has first nickel cobalt alloy layer at the first surface of substrate layer, has the welding layer at the substrate layer second surface, and the colour of first nickel cobalt alloy layer is black, guarantees that the bus bar single face colour is black promptly, and first nickel cobalt alloy layer is the metal level simultaneously, can electrically conduct to when the black bus bar need lap welding and need guarantee that the black face is towards a direction, the welding layer can weld with the black face of black bus bar. In addition, the application also provides a black bus bar manufacturing method and a full-black photovoltaic module with the advantages.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a black bus bar according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another black bus bar according to an embodiment of the present disclosure;
fig. 3 is a flowchart illustrating a method for manufacturing a black bus bar according to an embodiment of the present disclosure;
fig. 4 is a flowchart of another method for manufacturing a black bus bar according to an embodiment of the present disclosure.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background art, the black surface of the black bus bar in the prior art is a single-sided paint spraying surface, which causes paint falling and whitening of the bent black bus bar and seriously affects the appearance and yield of the full-black photovoltaic module; on the other hand, when two black busbar lap welds of full black photovoltaic module line demand and black face when one direction, because the unable welding of spray paint face and insulating can lead to the unable lap welding of circuit and normally electrically conductive.
In view of the above, the present application provides a black bus bar, please refer to fig. 1, where fig. 1 is a schematic structural diagram of a black bus bar according to an embodiment of the present application, including:
a substrate layer 1;
the first nickel-cobalt alloy layer 2 is positioned on the first surface of the substrate layer 1;
and the welding layer 3 is positioned on the second surface of the substrate layer 1, wherein the second surface is opposite to the first surface.
Note that the first surface is an upper surface or a lower surface of the substrate layer 1, and correspondingly, the second surface is a lower surface or an upper surface of the substrate layer 1.
It should be noted that, in this embodiment, the substrate layer 1 is oxygen-free copper, the grade must be greater than oxygen-free copper secondary grade (TU2), and the copper content must be greater than 99.95%, which are required to be in accordance with the national standard GB/T5231-2012.
Further, in the present embodiment, the specific material of the base material layer 1 is not particularly limited, as the case may be. For example, the base material layer 1 may be copper or brass.
It should be noted that, in the present embodiment, the ratio of cobalt to nickel in the first nickel-cobalt alloy layer 2 is not specifically limited, and is determined according to the shade requirement of the color of the black bus bar. The higher the proportion of cobalt, the darker the color of the first nickel-cobalt alloy layer 2, i.e., the darker the black color of the black surface of the bus bar.
Preferably, in an embodiment of the present application, the welding layer 3 is a tin welding layer 3 or a tin-lead eutectic welding layer 3, wherein the tin welding layer 3 does not contain lead, which is more environmentally friendly, and the tin-lead eutectic welding layer 3 is more favorable for welding.
It should be noted that, due to the limitation of the manufacturing process and other factors, the welding layer 3 may be distributed to a partial area of the side surface of the substrate layer 1 during the manufacturing process, and the black bus bar is not affected.
The black bus bar in this embodiment has first nickel cobalt alloy layer 2 on the first surface of substrate layer 1, has welding layer 3 on substrate layer 1 second surface, and the color of first nickel cobalt alloy layer 2 is black, guarantees that the bus bar single face color is black promptly, and first nickel cobalt alloy layer 2 is the metal level simultaneously, can electrically conduct to when the black bus bar needs lap welding and need to guarantee that the black face is towards a direction, welding layer 3 can weld with the black face of black bus bar.
Referring to fig. 2, fig. 2 is a schematic structural diagram of another black bus bar provided in the present embodiment, in which the black bus bar further includes:
a second nickel-cobalt alloy layer 4 located on the side surface and the second surface of the substrate layer 1;
correspondingly, the solder layer 3 is located on the surface of the second nickel-cobalt alloy layer 4 facing away from the second surface.
Preferably, the ratio of cobalt to nickel in the second nickel-cobalt alloy layer 4 is the same as the ratio of cobalt to nickel in the first nickel-cobalt alloy layer 2, so as to simplify the manufacturing process of the black bus bar.
In the black bus bar in the embodiment, the first nickel-cobalt alloy layer 2 and the second nickel-cobalt alloy layer 4 are distributed on the outer surface of the substrate layer 1, the material of the substrate layer 1 is very easy to be oxidized, and the first nickel-cobalt alloy layer 2 and the second nickel-cobalt alloy layer 4 are more stable and can protect the substrate layer 1 from being oxidized; furthermore, when the ratio of cobalt to nickel in the second nickel-cobalt alloy layer 4 and the first nickel-cobalt alloy layer 2 is the same, the substrate layer 1 does not need to be differentiated on the front and back sides, and both the second nickel-cobalt alloy layer 4 and the first nickel-cobalt alloy layer 2 can be used as black surfaces of the bus bar, so that the welding layer 3 is not prone to errors.
In an embodiment of the present application, the thickness of the first nickel cobalt alloy layer 2 ranges from 5 micrometers to 10 micrometers, including the end point value, it is avoided that the thickness of the first nickel cobalt alloy layer 2 is too thin, which results in the appearance of the black bus bar not meeting the requirement of color, and is not favorable for welding if it is too thin, and at the same time, it is avoided that the thickness of the first nickel cobalt alloy layer 2 is too thick, which results in the increase of the material used for the first nickel cobalt alloy layer 2, so that the cost of the black bus bar increases.
Preferably, the thickness of the second nickel cobalt alloy layer 4 is equal to the thickness of the first nickel cobalt alloy layer 2.
In an embodiment of the application, the thickness value range of the welding layer 3 is 20 microns to 30 microns, including endpoint value, and the thickness of avoiding the welding layer 3 is too thin, and the welding fastness during welding is not enough, and the thickness of avoiding the welding layer 3 is too thick simultaneously, leads to welding layer 3 material increase for the cost of black bus bar increases, and the welding layer 3 takes place to melt during welding, and it is serious to overflow the condition all around.
The present application further provides a method for manufacturing a black bus bar, please refer to fig. 3, the method includes:
step S101: and obtaining the substrate layer.
Step S102: and manufacturing a first nickel-cobalt alloy layer on the first surface of the base material layer.
Specifically, a first nickel-cobalt alloy layer is manufactured on the first surface of the base material layer by using an electroplating method.
Step S103: and manufacturing a welding layer on the second surface of the substrate layer, wherein the second surface is opposite to the first surface.
Specifically, a welding layer is manufactured on the second surface of the base material layer by using an electroplating method.
Preferably, the thickness of the first nickel-cobalt alloy layer is controlled to be between 5 micrometers and 10 micrometers, including the end points, so that the thickness of the first nickel-cobalt alloy layer is prevented from being too thin, which results in that the appearance of the black bus bar does not meet the requirement of color, and is unfavorable for welding if the thickness of the first nickel-cobalt alloy layer is too thin, and the material consumption of the first nickel-cobalt alloy layer is prevented from being increased, which results in that the cost of the black bus bar is increased.
Preferably, the thickness of control welding layer forms between 20 microns to 30 microns, including endpoint value, avoids welding layer's thickness too thin, and the welding fastness during welding is not enough, avoids welding layer's thickness too thick simultaneously, leads to welding layer material increase for black bus bar's cost increases, and welding layer takes place to melt during the welding, and it is serious to overflow the condition all around.
Optionally, before obtaining the substrate layer, the method further includes:
and cleaning the substrate layer to be treated to obtain the substrate layer, so that the surface of the obtained substrate layer is cleaner without dirt, impurities and the like.
Preferably, the formed welding layer is controlled to be a tin welding layer or a tin-lead eutectic welding layer, wherein the tin welding layer does not contain lead, the environment is more protected, and the tin-lead eutectic welding layer is more beneficial to welding.
The black bus bar obtained by the black bus bar manufacturing method in this embodiment has the first nickel-cobalt alloy layer on the first surface of the base material layer, and has the welding layer on the second surface of the base material layer, where the color of the first nickel-cobalt alloy layer is black, that is, it is ensured that the single-side color of the bus bar is black, and the first nickel-cobalt alloy layer is a metal layer, and can conduct electricity, and when the black bus bar needs to be lap-welded and it is required to ensure that the black surface faces one direction, the welding layer can be welded to the black surface of the black bus bar.
Referring to fig. 4, fig. 4 is a flowchart illustrating another method for manufacturing a black bus bar according to an embodiment of the present disclosure, the method including:
step S201: and obtaining the substrate layer.
Step S202: and manufacturing a first nickel-cobalt alloy layer on the first surface of the base material layer.
Step S203: and manufacturing a second nickel-cobalt alloy layer on the side surface of the base material layer and the second surface.
Step S204: and manufacturing the welding layer on the surface of the second nickel-cobalt alloy layer, which is far away from the second surface, wherein the second surface is opposite to the first surface.
Preferably, the ratio of cobalt to nickel in the second nickel-cobalt alloy layer is controlled to be the same as the ratio of cobalt to nickel in the first nickel-cobalt alloy layer, so as to simplify the manufacturing process of the black bus bar.
Preferably, the thickness of the second nickel-cobalt alloy layer is controlled to be equal to the thickness of the first nickel-cobalt alloy layer, so as to simplify the manufacturing process of the black bus bar.
The application also provides a complete black photovoltaic module, complete black photovoltaic module includes any one of the aforesaid black busbar.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The black bus bar, the manufacturing method thereof and the full black photovoltaic module provided by the application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (10)
1. A black bus bar, comprising:
a substrate layer;
the first nickel-cobalt alloy layer is positioned on the first surface of the base material layer;
and the welding layer is positioned on the second surface of the base material layer, wherein the second surface is opposite to the first surface.
2. The black bus bar of claim 1, further comprising:
a second nickel-cobalt alloy layer located on the side surface of the substrate layer and the second surface;
correspondingly, the welding layer is positioned on the surface of the second nickel-cobalt alloy layer, which faces away from the second surface.
3. The black bus bar of claim 1, wherein the welding layer is a tin welding layer or a tin-lead eutectic welding layer.
4. The black bus bar of claim 1, wherein the first nickel cobalt alloy layer has a thickness ranging from 5 microns to 10 microns, inclusive.
5. The black bus bar of any of claims 1 to 4, wherein the solder layer has a thickness ranging from 20 microns to 30 microns, inclusive.
6. A method for manufacturing a black bus bar, comprising:
obtaining a substrate layer;
manufacturing a first nickel-cobalt alloy layer on the first surface of the base material layer;
and manufacturing a welding layer on the second surface of the substrate layer, wherein the second surface is opposite to the first surface.
7. The method of manufacturing a black bus bar according to claim 6, further comprising:
manufacturing a second nickel-cobalt alloy layer on the side surface and the second surface of the substrate layer;
correspondingly, the step of manufacturing the welding layer on the second surface of the base material layer comprises the following steps:
and manufacturing the welding layer on the surface of the second nickel-cobalt alloy layer, which is opposite to the second surface.
8. The method of claim 6, wherein the forming a first nickel-cobalt alloy layer on the first surface of the substrate layer comprises:
and manufacturing a first nickel-cobalt alloy layer on the first surface of the base material layer by using an electroplating method.
9. The method of manufacturing a black bus bar according to claim 6, wherein the manufacturing of the solder layer on the second surface of the base material layer comprises:
and manufacturing a welding layer on the second surface of the base material layer by using an electroplating method.
10. An all-black photovoltaic module, characterized in that it comprises a black bus bar according to any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911342513.XA CN111129194A (en) | 2019-12-23 | 2019-12-23 | Black bus bar, manufacturing method thereof and full-black photovoltaic module |
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| CN201911342513.XA CN111129194A (en) | 2019-12-23 | 2019-12-23 | Black bus bar, manufacturing method thereof and full-black photovoltaic module |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113394307A (en) * | 2021-06-11 | 2021-09-14 | 东方日升新能源股份有限公司 | Dark photovoltaic module and manufacturing process thereof |
| CN113764537A (en) * | 2021-08-31 | 2021-12-07 | 晶澳（扬州）太阳能科技有限公司 | Black bus bar for photovoltaic module, preparation method of black bus bar and photovoltaic module |
| CN113823706A (en) * | 2021-11-23 | 2021-12-21 | 常州九天新能源科技有限公司 | Single-side tinned photovoltaic black bus bar and manufacturing method thereof |
| CN116475619A (en) * | 2023-04-04 | 2023-07-25 | 同享（苏州）电子材料科技股份有限公司 | Black photovoltaic interconnection welding rod and preparation method thereof |
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| CN116475619A (en) * | 2023-04-04 | 2023-07-25 | 同享（苏州）电子材料科技股份有限公司 | Black photovoltaic interconnection welding rod and preparation method thereof |
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