CN111129128A - Production process of high-voltage impact-resistant high-voltage 2SB772P type high-power triode - Google Patents
Production process of high-voltage impact-resistant high-voltage 2SB772P type high-power triode Download PDFInfo
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- CN111129128A CN111129128A CN202010025075.0A CN202010025075A CN111129128A CN 111129128 A CN111129128 A CN 111129128A CN 202010025075 A CN202010025075 A CN 202010025075A CN 111129128 A CN111129128 A CN 111129128A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000002184 metal Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 230000017525 heat dissipation Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000000969 carrier Substances 0.000 abstract description 9
- 238000005215 recombination Methods 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 6
- 230000002787 reinforcement Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 230000003014 reinforcing effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
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Abstract
The invention discloses a production process of a high-voltage 2SB772P type high-power triode with high voltage impact resistance, which comprises a triode body and a pin, wherein the pin is fixedly connected with the triode body, the doping concentration of an emitting region is set to be the highest so as to provide enough current carriers, the doping concentration of a base region is set to be the lowest so as to reduce the recombination chance of the current carriers in the base region, meanwhile, the doping concentration of a collector region is set to be between the emitting region and the base region so as to collect the current carriers at the edge, and according to the principle that the lower the doping concentration is, the higher the resistivity is, the doping concentration is set to be the lower, so that the triode can have the high voltage impact resistance and can be normally used under high voltage.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a production process of a high-voltage 2SB772P type high-power triode with high voltage impact resistance.
Background
The triode is a semiconductor device for controlling current, which is called a semiconductor triode, also called a bipolar transistor and a transistor. The function is to amplify the weak signal into an electric signal with larger amplitude value, and the electric signal is also used as a contactless switch. The triode is one of semiconductor basic components, has the function of current amplification and is a core element of an electronic circuit. The triode is formed by manufacturing two PN junctions which are very close to each other on a semiconductor substrate, the whole semiconductor is divided into three parts by the two PN junctions, the middle part is a base region, the two side parts are an emitter region and a collector region, and the arrangement modes include PNP and NPN.
The conventional 2SB772P type high-power triode is often out of normal use due to overhigh voltage in the using process, so that the instrument is damaged and loss is brought.
Aiming at the problems, the invention provides a production process of a high-voltage 2SB772P type high-power triode which can resist high-voltage impact.
Disclosure of Invention
The invention aims to provide a production process of a high-voltage 2SB772P type high-power triode with high-voltage impact resistance, which comprises a triode body and a pin, wherein the pin is fixedly connected with the triode body, so that the heat dissipation is good, and the high-voltage impact resistance is realized, thereby solving the problems in the background art.
In order to achieve the purpose, the invention provides the following technical scheme: a high-voltage 2SB772P type high-power triode with high voltage impact resistance comprises a triode body and a pin, wherein the pin is fixedly connected with the triode body, the triode body is provided with a metal reinforcing shell and an insulating sleeve, the metal reinforcing shell is coated on the triode body, and the insulating sleeve is sleeved at one end of the metal reinforcing shell; the metal reinforced shell is provided with heat dissipation holes, and the heat dissipation holes are formed in the middle of the metal reinforced shell and penetrate through the triode main body; the insulating sleeve is made of SiO2 material and is provided with three groups of pin mounting holes, and the three groups of pin mounting holes are formed in the side surface of the insulating sleeve; the pins are made of copper materials.
The invention provides another technical scheme: a production process of a high-voltage 2SB772P type high-power triode with high voltage impact resistance comprises the following steps:
s01: providing a P-type substrate, and forming an N-type epitaxial layer on the P-type substrate;
s02: forming a groove on the N-type epitaxial layer by using the photoresist as a mask;
s03: removing the photoresist to form a polysilicon layer;
s04: adopting a high-temperature oxidation process, and diffusing impurities of the polycrystalline silicon layer to the N-type epitaxial layer and the P-type substrate to form a base region and a collector region;
s05: forming an emitter region in the trench;
s06: forming base electrode contact areas connected with the base regions on the N-type epitaxial layers at the two ends of the groove;
s07: and forming an emitter, a base and a collector which are respectively connected with the emitter region, the base contact region and the collector region.
Furthermore, the doping concentration of the emitter region is the highest, the doping concentration of the base region is the lowest, and the doping concentration of the collector region is between the emitter region and the base region.
Compared with the prior art, the invention has the following beneficial effects:
1. this high-power triode's of high pressure 2SB772P type production technology of high pressure resistant high pressure impact, through set up the metal reinforcement shell and adopt the insulating cover that SiO2 material was made at the triode main part, and insulating cover suit is in the one end of metal reinforcement shell, and set up the louvre in the centre of metal reinforcement shell, and run through triode main part, increase the insulating effect of triode main part, according to the characteristic of metal heat conduction, set up the louvre again, increase heat radiating area, reach better radiating effect.
2. This high-voltage 2SB772P type high-power triode's of high pressure resistant impact production technology, through setting up the doping concentration of emitter region to the highest, in order to provide sufficient carrier, and in order to reduce the compound chance of carrier in the base region, set up the doping concentration of base region to the lowest, simultaneously for collecting the carrier at edge, set up the doping concentration of collector region between emitter region and base region, according to doping concentration lower, the higher principle of resistivity, make and adopt such doping concentration to set up, make this triode, can possess the performance of high pressure resistant impact, can normally use under high voltage.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a flow chart of a fabrication process of the present invention;
fig. 3 is a cross-sectional view of the present invention.
In the figure: 1. a triode body; 11. a metal reinforced housing; 111. heat dissipation holes; 12. an insulating sleeve; 121. a pin mounting hole; 2. a pin; 101. a P-type substrate; 102. an N-type epitaxial layer; 103. a groove; 201. a collector region; 202. a base region; 203. an emission region; 204. a base contact region; 301. an emitter; 302. a base electrode; 303. and a collector.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a production process of a high-voltage 2SB772P type high-power triode with high voltage impact resistance comprises a triode body 1 and a pin 2, the pin 2 is fixedly connected with the triode body 1, the triode body 1 is provided with a metal reinforced shell 11 and an insulating sleeve 12, the metal reinforced shell 11 is coated on the triode body 1, the insulating sleeve 12 is sleeved at one end of the metal reinforced shell 11, the metal reinforced shell 11 is provided with a heat dissipation hole 111, the heat dissipation hole 111 is formed in the middle of the metal reinforced shell 11 and penetrates through the triode body 1, the insulating sleeve 12 is made of SiO2 material and is provided with pin mounting holes 121, three groups of the pin mounting holes 121 are formed, the three groups of the pin mounting holes 121 are formed in the side face of the insulating sleeve 12, and the pin 2 is made of copper material. Through set up metal reinforcement shell 11 and the insulating cover 12 that adopts the SiO2 material to make at triode body 1, and insulating cover 12 suit is in the one end of metal reinforcement shell 11 to set up louvre 111 in the centre of metal reinforcement shell 11, and run through triode body 1 main part, increase triode body 1's insulating effect, according to the characteristic of metal heat conduction, set up louvre 111 again, increase heat radiating area, reach better radiating effect.
Referring to fig. 2-3, in order to better show the process of producing the high voltage impact resistant 2SB772P type high power transistor, the present embodiment provides a process for producing a high voltage impact resistant 2SB772P type high power transistor, which includes the following steps:
s01: providing a P-type substrate 101, and forming an N-type epitaxial layer 102 on the P-type substrate 101;
s02: forming a trench 103 on the N-type epitaxial layer 102 by using photoresist as a mask;
s03: removing the photoresist to form a polysilicon layer;
s04: adopting a high-temperature oxidation process, and diffusing impurities of the polycrystalline silicon layer to the N-type epitaxial layer 102 and the P-type substrate 101 to form a base region 202 and a collector region 201;
s05: forming an emitter region 203 in the trench 103;
s06: forming base contact regions 204 connected with the base regions 202 on the N-type epitaxial layer 102 at two ends of the trench 103;
s07: an emitter 301, a base 302 and a collector 303 are formed, which are connected to the emitter region 203, the base contact region 204 and the collector region 201, respectively.
The doping concentration of the emitter region 203 is the highest, the doping concentration of the base region 202 is the lowest, the doping concentration of the collector region 201 is between the emitter region 203 and the base region 202, the doping concentration of the emitter region 203 is set to be the highest so as to provide enough carriers, the doping concentration of the base region 202 is set to be the lowest in order to reduce the recombination chance of the carriers in the base region 202, meanwhile, the doping concentration of the collector region 201 is between the emitter region 203 and the base region 202 in order to collect carriers at the edge, and according to the principle that the lower the doping concentration is, the higher the resistivity is, the doping concentration setting is adopted, so that the triode has the performance of high voltage impact resistance and can be normally used under high voltage.
In summary, the following steps: the invention provides a production process of a high-voltage 2SB772P type high-power triode with high voltage impact resistance, which is characterized in that a metal reinforced shell 11 and an insulating sleeve 12 made of SiO2 are arranged on a triode body 1, the insulating sleeve 12 is sleeved at one end of the metal reinforced shell 11, a heat dissipation hole 111 is formed in the middle of the metal reinforced shell 11 and penetrates through the triode body 1 to increase the insulating effect of the triode body 1, and the heat dissipation hole 111 is arranged according to the heat conduction characteristic of metal to increase the heat dissipation area and achieve a better heat dissipation effect; the doping concentration of the emitter region 203 is set to be the highest so as to provide enough carriers, the doping concentration of the base region 202 is set to be the lowest in order to reduce the recombination chance of the carriers in the base region 202, meanwhile, the doping concentration of the collector region 201 is set to be between the emitter region 203 and the base region 202 in order to collect the carriers at the edge, and according to the principle that the lower the doping concentration is, the higher the resistivity is, the doping concentration setting is adopted, so that the triode can have the performance of resisting high voltage impact and can be normally used under high voltage.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (2)
1. A production process of a high-voltage 2SB772P type high-power triode with high voltage impact resistance comprises a triode body (1) and a pin (2), wherein the pin (2) is fixedly connected with the triode body (1), and the production process is particularly characterized in thatCharacterized in that: the triode body (1) is provided with a metal reinforced shell (11) and an insulating sleeve (12), the metal reinforced shell (11) is coated on the triode body (1), and the insulating sleeve (12) is sleeved at one end of the metal reinforced shell (11); the metal reinforced shell (11) is provided with heat dissipation holes (111), and the heat dissipation holes (111) are formed in the middle of the metal reinforced shell (11) and penetrate through the triode body (1); the insulating sleeve (12) adopts SiO2The insulating sleeve is made of materials and is provided with three groups of pin mounting holes (121), and the three groups of pin mounting holes (121) are arranged on the side surface of the insulating sleeve (12); the production of the high-power triode comprises the following steps:
s01: providing a P-type substrate (101), and forming an N-type epitaxial layer (102) on the P-type substrate (101);
s02: forming a trench (103) on the N-type epitaxial layer (102) by using the photoresist as a mask;
s03: removing the photoresist to form a polysilicon layer;
s04: adopting a high-temperature oxidation process, and diffusing impurities of the polycrystalline silicon layer to the N-type epitaxial layer (102) and the P-type substrate (101) to form a base region (202) and a collector region (201);
s05: forming an emitter region (203) in the trench (103);
s06: forming base contact regions (204) connected with the base regions (202) on the N-type epitaxial layer (102) at two ends of the groove (103);
s07: an emitter (301), a base (302) and a collector (303) are formed, which are connected to the emitter region (203), the base contact region (204) and the collector region (201), respectively.
2. The process for manufacturing a high voltage impact resistant high power triode of 2SB772P type according to claim 1, wherein: the doping concentration of the emitter region (203) is the highest, the doping concentration of the base region (202) is the lowest, and the doping concentration of the collector region (201) is between the emitter region (203) and the base region (202).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010025075.0A CN111129128A (en) | 2020-01-10 | 2020-01-10 | Production process of high-voltage impact-resistant high-voltage 2SB772P type high-power triode |
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| CN202010025075.0A CN111129128A (en) | 2020-01-10 | 2020-01-10 | Production process of high-voltage impact-resistant high-voltage 2SB772P type high-power triode |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100200932A1 (en) * | 2007-05-29 | 2010-08-12 | Kyocera Corporation | Electronic-Component-Housing Package and Electronic Device |
| US20120061802A1 (en) * | 2010-09-09 | 2012-03-15 | Gareth Nicholas | Bipolar junction transistor |
| CN105762181A (en) * | 2016-03-04 | 2016-07-13 | 李思敏 | Polycrystalline silicon emitting electrode transistor and manufacturing method therefor |
| JP2017126724A (en) * | 2016-01-15 | 2017-07-20 | ローム株式会社 | Semiconductor device and semiconductor device manufacturing method |
| CN109087942A (en) * | 2018-08-23 | 2018-12-25 | 盛世瑶兰（深圳）科技有限公司 | A kind of groove-shaped triode and preparation method thereof |
| CN110098252A (en) * | 2019-03-22 | 2019-08-06 | 泉州齐美电子科技有限公司 | A kind of triode and preparation method thereof |
-
2020
- 2020-01-10 CN CN202010025075.0A patent/CN111129128A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100200932A1 (en) * | 2007-05-29 | 2010-08-12 | Kyocera Corporation | Electronic-Component-Housing Package and Electronic Device |
| US20120061802A1 (en) * | 2010-09-09 | 2012-03-15 | Gareth Nicholas | Bipolar junction transistor |
| JP2017126724A (en) * | 2016-01-15 | 2017-07-20 | ローム株式会社 | Semiconductor device and semiconductor device manufacturing method |
| CN105762181A (en) * | 2016-03-04 | 2016-07-13 | 李思敏 | Polycrystalline silicon emitting electrode transistor and manufacturing method therefor |
| CN109087942A (en) * | 2018-08-23 | 2018-12-25 | 盛世瑶兰（深圳）科技有限公司 | A kind of groove-shaped triode and preparation method thereof |
| CN110098252A (en) * | 2019-03-22 | 2019-08-06 | 泉州齐美电子科技有限公司 | A kind of triode and preparation method thereof |
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