CN111129003A - Crystal coated structure of electroluminescent device and display device - Google Patents

Crystal coated structure of electroluminescent device and display device Download PDF

Info

Publication number
CN111129003A
CN111129003A CN201911312110.0A CN201911312110A CN111129003A CN 111129003 A CN111129003 A CN 111129003A CN 201911312110 A CN201911312110 A CN 201911312110A CN 111129003 A CN111129003 A CN 111129003A
Authority
CN
China
Prior art keywords
wire
sub
connecting line
flip chip
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201911312110.0A
Other languages
Chinese (zh)
Other versions
CN111129003B (en
Inventor
郑士嵩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Original Assignee
Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd filed Critical Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Priority to CN201911312110.0A priority Critical patent/CN111129003B/en
Publication of CN111129003A publication Critical patent/CN111129003A/en
Application granted granted Critical
Publication of CN111129003B publication Critical patent/CN111129003B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0207Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention provides a flip chip structure of an electroluminescent device and a display device, wherein the flip chip structure comprises: the device comprises an electroluminescent device, an anode flip chip connecting wire connected with an anode of the electroluminescent device and a cathode flip chip connecting wire connected with a cathode of the electroluminescent device, wherein an insulating layer is arranged between the anode flip chip connecting wire and the cathode flip chip connecting wire. In the invention, a capacitor is formed between the anode flip chip connecting wire and the cathode flip chip connecting wire, the reaction speed of applying an electric signal to the electroluminescent device can be slowed down through the capacitor, when a disturbance signal exists, the voltage signal change of the disturbance signal is small, the influence of non-ideal disturbance can be reasonably reduced under the condition of reducing the reaction speed, and the display stability is enhanced.

Description

Crystal coated structure of electroluminescent device and display device
Technical Field
The invention relates to the technical field of display, in particular to a flip chip structure of an electroluminescent device and a display device.
Background
Electroluminescent (EL) devices, including LEDs, OLEDs, etc., have been used in large quantities in recent years for the fabrication of display products, and exhibit better optical characteristics, lower power consumption performance, and better product form factor in application than conventional display devices, such as CRTs, LCDs, etc. In recent years, a common electrode architecture adopted for light emission of an EL device provides one of important elements of the most basic display driving environment, and according to this architecture, power saving applications can be extended.
At present, a typical pixel structure is directly connected to an electrical signal through an Anode (Anode) and a Cathode (Cathode) of an EL device, as shown in fig. 1, when a voltage across two ends exceeds a forward voltage of the EL device, light is emitted, but an undesirable disturbance usually exists on the electrical signal, and if the undesirable disturbance is absorbed by the EL device, unstable luminance jitter is generated, thereby affecting display stability, as shown in fig. 2, fig. 2 is an electrical curve of the EL device, and when noise exceeds the forward voltage (v) of the EL deviceF) The current of the EL device is dithered and the EL device produces brightness flicker. There is currently no effective solution to this problem.
Thus, there is a need for improvements and enhancements in the art.
Disclosure of Invention
In view of the above-mentioned shortcomings in the prior art, an object of the present invention is to provide a flip chip structure of an electroluminescent device and a display device, so as to achieve reasonable reduction of the influence of non-ideal disturbance and enhance the stability of display.
In a first aspect, an embodiment of the present invention provides a flip chip structure device of an electroluminescent device, where the flip chip structure is disposed on a substrate, and the flip chip structure device includes: the device comprises an electroluminescent device, an anode flip chip connecting wire connected with an anode of the electroluminescent device and a cathode flip chip connecting wire connected with a cathode of the electroluminescent device, wherein an insulating layer is arranged between the anode flip chip connecting wire and the cathode flip chip connecting wire, so that a capacitor connected with the electroluminescent device in parallel is formed between the anode flip chip connecting wire and the cathode flip chip connecting wire.
As a further improved technical scheme, the anode flip chip connection line comprises a first connection line, a second connection line and a third connection line; the insulating layer is arranged between the second connecting wire and the cathode flip chip connecting wire; the insulating layer is arranged between the third connecting wire and the cathode flip chip connecting wire.
As a further improved technical solution, the second connection line is bent, and the anode of the electroluminescent device is taken as a first origin, and the second connection line includes a first sub-connection line connected to the first origin, and a second sub-connection line connected to the first sub-connection line and forming a right angle with the first sub-connection line; the third connecting line is bent and comprises a third sub-connecting line connected with the first origin and a fourth sub-connecting line which is connected with the third sub-connecting line and forms a right angle with the third sub-connecting line; the first sub-connecting line and the third sub-connecting line form an angle of 180 degrees, and the second sub-connecting line and the fourth sub-connecting line are parallel; the first connecting line, the first sub-connecting line and the third sub-connecting line are at right angles
As a further improved technical solution, the cathode flip chip connection line is parallel to the second sub-connection line and the fourth sub-connection line.
As a further improved technical solution, the anode flip chip connection line includes a fourth connection line and a fifth connection line connected to the fourth connection line and forming a right angle with the fourth connection line, and the cathode flip chip connection line includes a sixth connection line and a seventh connection line connected to the sixth connection line and forming a right angle with the sixth connection line; the insulating layer is arranged between the fourth connecting line and the sixth connecting line, and the insulating layer is arranged between the fifth connecting line and the seventh connecting line.
As a further improved technical solution, the fifth connection line is bent, and takes the anode of the electroluminescent device as a first origin, and the fifth connection line includes a fifth sub-connection line connected to the first origin, and a sixth sub-connection line connected to the fifth sub-connection line and forming a right angle with the fifth sub-connection line; the fifth sub-connecting line is perpendicular to the fourth connecting line, and the sixth sub-connecting line is parallel to the fourth connecting line.
As a further improved technical solution, the sixth connection line is bent, and the cathode of the electroluminescent device is taken as a second origin, and the sixth connection line includes a seventh sub-connection line connected to the second origin, and an eighth sub-connection line connected to the seventh sub-connection line and forming a right angle with the seventh sub-connection line; the seventh sub-connecting line is perpendicular to the seventh connecting line, and the eighth sub-connecting line is parallel to the seventh connecting line.
As a further improved technical scheme, the anode flip chip connection line comprises an eighth connection line, a ninth connection line and a tenth connection line; the cathode flip chip connecting wire comprises an eleventh connecting wire, a twelfth connecting wire and a thirteenth connecting wire; the insulating layer is arranged between the ninth connecting line and the twelfth connecting line, and the insulating layer is arranged between the tenth connecting line and the thirteenth connecting line.
As a further improved technical solution, the ninth connecting line is connected with the eighth connecting line and forms a right angle with the eighth connecting line; the tenth connecting line is connected with the eighth connecting line and the ninth connecting line and forms a right angle with the eighth connecting line; the twelfth connecting line is connected with the eleventh connecting line and forms a right angle with the eleventh connecting line; the thirteenth wire is connected to the eleventh wire and the twelfth wire and is at a right angle to the eleventh wire.
In a second aspect, an embodiment of the present invention provides a display apparatus, where the display apparatus includes a substrate and a flip chip structure of a plurality of electroluminescent devices disposed on the substrate, each electroluminescent device is arranged in an array on the substrate, the electroluminescent devices in each horizontal row of the array are connected to the same scan line, and the electroluminescent devices in each vertical column of the array are connected to the same signal line; the anode of each electroluminescent device is connected to the scanning line, and the cathode of each electroluminescent device is connected to the scanning line and comprises the indicator light and the brightness adjusting circuit of the backlight.
Compared with the prior art, the embodiment of the invention has the following advantages:
in an embodiment of the present invention, the flip chip structure includes: the device comprises an electroluminescent device, an anode flip chip connecting wire connected with an anode of the electroluminescent device and a cathode flip chip connecting wire connected with a cathode of the electroluminescent device, wherein an insulating layer is arranged between the anode flip chip connecting wire and the cathode flip chip connecting wire. In the invention, a capacitor is formed between the anode flip chip connecting wire and the cathode flip chip connecting wire, the reaction speed of applying an electric signal to the EL device can be slowed down through the capacitor, when a disturbance signal exists, the voltage signal change of the disturbance signal is small, the influence of non-ideal disturbance can be reasonably reduced under the condition of reducing the reaction speed, and the display stability is enhanced.
Drawings
FIG. 1 is a diagram illustrating a typical pixel structure in the prior art;
FIG. 2 is an electrical curve corresponding to FIG. 1;
fig. 3 is a first schematic diagram of a flip chip structure of an electroluminescent device according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a flip chip structure and an equivalent circuit of an electroluminescent device in the prior art;
fig. 5 is a schematic diagram of a flip chip structure and an equivalent circuit of an electroluminescent device according to an embodiment of the present invention;
FIG. 6 is a graph of the corresponding electrical curves of FIG. 3;
fig. 7 is a second schematic diagram of a flip chip structure of an electroluminescent device according to an embodiment of the present invention;
fig. 8 is a schematic diagram of a second implementation manner of a flip chip structure of an electroluminescent device according to an embodiment of the present invention;
fig. 9 is a schematic diagram of a third implementation manner of a flip chip structure of an electroluminescent device according to an embodiment of the present invention;
fig. 10 is a schematic diagram of an array arrangement of a flip chip structure of an electroluminescent device in a display device according to an embodiment of the present invention;
fig. 11 is a schematic diagram of a combination of a plurality of pixel arrays according to an embodiment of the invention.
Detailed Description
The invention provides a flip chip structure and a display device of an electroluminescent device, wherein a capacitor is formed between an anode flip chip connecting wire and a cathode flip chip connecting wire in the flip chip structure, the response speed of an electric signal applied to an EL device can be slowed down through the capacitor, when a disturbance signal exists, the voltage signal change of the disturbance signal is small, the influence of non-ideal disturbance can be reasonably reduced under the condition of reducing the response speed, and the display stability is enhanced.
In order to make the objects, technical solutions and effects of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 3, the present invention provides a flip chip structure of an electroluminescent device, wherein the flip chip structure is disposed on a substrate, the substrate may be a PCB substrate or a Glass substrate, and the flip chip structure includes: the device comprises an electroluminescent device EL, an anode flip-chip connecting line A connected with the anode of the electroluminescent device EL and a cathode flip-chip connecting line B connected with the cathode of the electroluminescent device EL, wherein an insulating layer S (a shaded part in figure 3) is arranged between the anode flip-chip connecting line A and the cathode flip-chip connecting line B, so that a capacitor connected with the electroluminescent device in parallel is formed between the anode flip-chip connecting line and the cathode flip-chip connecting line.
In the embodiment of the invention, the electroluminescent device is an EL device, the anode of the EL device is connected with an anode flip-chip connecting wire, and the cathode of the EL device is connected with a cathode flip-chip connecting wire; in the prior art, referring to fig. 4, (1) in fig. 4 is a flip chip structure of an EL device in the prior art, wherein in (1) in fig. 4, a is an anode flip chip connection line, C is a cathode flip chip connection line, and EL is an electroluminescent device; fig. 4 (2) is an equivalent circuit diagram corresponding to fig. 4 (1), and it can be seen that the anode flip-chip connection line and the cathode flip-chip connection line are at 180 degrees, i.e. there is no insulating layer between the anode flip-chip connection line and the cathode flip-chip connection line, while in the present invention, referring to fig. 5 (1), the anode flip-chip connection line and the cathode flip-chip connection line are partially parallel, so that there is an insulating layer S (hatched portion in fig. 5) between the anode flip-chip connection line and the cathode flip-chip connection line, the anode flip-chip connection line and the cathode flip-chip connection line are partially parallel, because there is a potential difference between the anode flip-chip connection line and the cathode flip-chip connection line (the anode flip-chip connection line is connected to the anode of the EL device, the cathode flip-chip connection line is connected to the cathode of the EL device), and there is an insulating, fig. 5 (2) is an equivalent circuit diagram corresponding to fig. 5 (1), the flip chip structure has a structure in which a capacitor and an EL device are connected in parallel, and the response speed of applying an electrical signal to the EL device can be slowed down by the capacitor, and when a disturbing signal exists, the voltage signal change of the disturbing signal is small, so that the influence of non-ideal disturbance can be reasonably reduced under the condition of reducing the response speed, and the display stability is enhanced.
Referring to fig. 6, fig. 6 is an electrical curve corresponding to the parallel structure of the EL device and the capacitor in fig. 3, and due to the capacitor, the original noise (n1) is reduced and changed into the reduced noise (n2), so that the brightness flicker of the EL device is reduced, that is, the influence of non-ideal disturbance is reasonably reduced, and the display stability is enhanced.
In the embodiment of the present invention, there are various forms of capacitance formed between the anode flip-chip connection line and the cathode flip-chip connection line, and in one implementation, referring to fig. 7, the anode flip-chip connection line a includes a first connection line 1, a second connection line 2, and a third connection line 3; the insulating layer S1 (hatched in fig. 7) is disposed between the second wire 2 and the cathode flip-chip wire B; the insulating layer S2 (shaded in fig. 7) is disposed between the third wire 3 and the cathode flip-chip wire B.
In the embodiment of the invention, the anode flip chip connecting wire A comprises a first connecting wire 1, a second connecting wire 2 and a third connecting wire 3, the extending direction of the first connecting wire 1 is different from the extending direction of the second connecting wire 2, and the extending direction of the first connecting wire 1 is also different from the extending direction of the third connecting wire 3; and taking the first connecting line as an axis, wherein the second connecting line 2 and the third connecting line 3 are symmetrical along the axis, and a cathode flip-chip connecting line B is arranged between the second connecting line 2 and the third connecting line 3.
Further, with reference to fig. 7, the second connecting line 2 is bent to use the anode of the electroluminescent device as a first origin, and the second connecting line 2 includes a first sub-connecting line 21 connected to the first origin and a second sub-connecting line 22 connected to the first sub-connecting line and forming a right angle with the first sub-connecting line; the third connecting line 3 is bent, and the third connecting line 3 comprises a third sub-connecting line 31 connected with the first origin and a fourth sub-connecting line 32 connected with the third sub-connecting line and forming a right angle with the third sub-connecting line; the first sub-connecting line 21 and the third sub-connecting line 31 form an angle of 180 degrees, and the second sub-connecting line 22 and the fourth sub-connecting line 32 are parallel; the first line 1 is at right angles to both the first sub-line 21 and the third sub-line 31. In the embodiment of the present invention, the cathode flip-chip connection line B is parallel to the second sub-connection line 22 and the fourth sub-connection line 32. Capacitors are formed between the second sub-wiring 22 and the cathode flip-chip wiring B, and between the fourth sub-wiring 32 and the cathode flip-chip wiring B.
In the embodiment of the invention, the anode of the EL device is taken as a first origin O1From O1Starting, extending a first preset length in the positive direction of the Y axis to obtain a first connecting line 1; from O1Starting, extending a second preset length in the X-axis negative direction to obtain a first sub-connecting line 21, and then extending the first preset length in the Y-axis negative direction to obtain a second sub-connecting line 22; from O1Starting from the first preset length, extending the second preset length to the positive direction of the X axis to obtain a third sub-connecting line 31, and turning to the negative direction of the Y axis to obtain a fourth sub-connecting line 32. Using the cathode of the EL device as the second origin O2From O2Extending a first preset length from the Y-axis negative direction to obtain a cathode flip-chip connection line. The first preset length is not more than the length of an anode flip chip connecting line in the prior art, and the second preset length is less than half of the spacing distance between the two EL devices.
The present invention provides another implementation manner, referring to fig. 8, an anode flip-chip connection line and a cathode flip-chip connection line respectively extend along a mutual direction, the anode flip-chip connection line includes a fourth connection line 4 and a fifth connection line 5 connected to the fourth connection line 4 and forming a right angle with the fourth connection line, the cathode flip-chip connection line includes a sixth connection line 6 and a seventh connection line 7 connected to the sixth connection line and forming a right angle with the sixth connection line; the insulating layer S3 (hatched in fig. 8) is provided between the fourth wire and the sixth wire, and the insulating layer S4 (hatched in fig. 8) is provided between the fifth wire and the seventh wire.
Further, the fifth connecting line 5 is bent, and the anode of the electroluminescent device EL is taken as the first origin O1Said fifth line 5 comprises a line connecting to said first origin O1A fifth sub-connecting line 51 connected to the first sub-connecting line, and a sixth sub-connecting line 52 connected to the fifth sub-connecting line 51 and forming a right angle with the fifth sub-connecting line; the fifth sub-connecting line 51 is perpendicular to the fourth connecting line 4Straight, the sixth sub-line 52 is parallel to the fourth line 4.
In the embodiment of the invention, the anode of the EL device is taken as a first origin O1From O1Starting from the starting point, extending a first preset length in the positive direction of the Y axis to obtain a fourth connecting line 4 from O1Starting from the first preset length, extending the second preset length in the X-axis negative direction to obtain a fifth sub-connecting line 51, and then extending the first preset length in the Y-axis negative direction to obtain a sixth sub-connecting line 52.
In the embodiment of the present invention, the sixth line 6 is bent, and the cathode of the electroluminescent device EL is taken as the second origin O2The sixth connecting line 6 comprises a seventh sub-connecting line 61 connected to the second origin, and an eighth sub-connecting line 62 connected to the seventh sub-connecting line and forming a right angle with the seventh sub-connecting line; the seventh sub-line 61 is perpendicular to the seventh line 7, and the eighth sub-line 62 is parallel to the seventh line 7. It is noted that the capacitors are formed by the sixth sub-line 52 and the seventh line 7, and the eighth sub-line 62 and the fourth line.
In the embodiment of the invention, the cathode of the EL device is taken as the second origin O2From O2Starting, extending a first preset length in the Y-axis negative direction to obtain a seventh connecting line 7; from O2Starting from this, a second preset length is extended in the positive direction of the X axis to obtain a seventh sub-link 61, and then an eighth sub-link 62 is extended in the positive direction of the Y axis.
In another implementation manner, referring to fig. 9, the anode flip-chip connection line includes an eighth connection line 81, a ninth connection line 82, and a tenth connection line 83; the cathode flip-chip connection line comprises an eleventh connection line 91, a twelfth connection line 92 and a thirteenth connection line 93; the insulating layer S5 (hatched in fig. 9) is disposed between the ninth wire 82 and the twelfth wire 92, and the insulating layer S6 (hatched in fig. 9) is disposed between the tenth wire 83 and the thirteenth wire 93.
Further, the ninth wire 82 is connected to the eighth wire 81 and is at a right angle to the eighth wire 82; the tenth connecting line 83 is connected to the eighth connecting line 81 and the ninth connecting line 82 and is at right angles to the eighth connecting line 81; the twelfth wire 92 is connected to the eleventh wire 91 and is at a right angle to the eleventh wire 91; the thirteenth wire 93 is connected to the eleventh wire 91 and the twelfth wire 92 and is at a right angle to the eleventh wire 91. The ninth wire 82 is 180 degrees from the tenth wire 83; the twelfth line 92 is 180 degrees from the thirteenth line 93. It is noted that the capacitors are formed between the ninth wire 82 and the twelfth wire 92, and between the tenth wire 83 and the thirteenth wire 93.
In the embodiment of the invention, the anode of the EL device is taken as a first origin O1From O1Starting, extending a first preset length in the positive direction of the Y axis to obtain an eighth connecting line 81; from O1Starting, extending a first preset length in the X-axis negative direction to obtain a ninth connecting line 82; from O1Starting, extending a first preset length in the positive direction of the X axis to obtain a tenth connecting line 83; using the cathode of the EL device as the second origin O2From O2Starting, extending a first preset length in the Y-axis negative direction to obtain an eleventh connecting line 91; from O2Starting, extending a first preset length in the X-axis negative direction to obtain a twelfth connecting line 92; from O2Starting from this, a first preset length is extended in the positive direction of the X axis to obtain a thirteenth connection line 93.
The invention also provides a display device correspondingly, which comprises a substrate and a plurality of flip chip structures of the electroluminescent devices arranged on the substrate, wherein the electroluminescent devices are arranged on the substrate in an array manner, the electroluminescent devices in each transverse row of the array are connected with the same scanning line, and the electroluminescent devices in each longitudinal column of the array are connected with the same signal line; and the anode of each electroluminescent device is connected with the scanning line, and the cathode of each electroluminescent device is connected with the scanning line.
In the embodiment of the invention, all the EL devices are arranged on the substrate in an array, the array arrangement is a typical pixel array arrangement, the common cathode is arranged in the row direction, the common anode is arranged in the column direction, and the row direction and the column direction can be mutually exchanged under the array arrangement; the EL devices are arranged in an array form and have high stability, and because the capacitors are added into the flip chip structure of the electroluminescent device, the influence of non-ideal disturbance can be inhibited, and the display stability is improved. The pixel array is a common anode and common cathode integration method, so that the display device has the advantage of electricity saving.
In the embodiment of the present invention, each pixel is structured by connecting an EL device and a capacitor in parallel, and a pixel matrix is constructed, referring to fig. 10, in the row direction of the pixel matrix, cathodes of a plurality of pixels are controlled by a common signal, anodes of the pixels in the same row are controlled in the column direction by independent signals, and the pixel matrix is obtained by expanding the above structure in multiple rows.
In an embodiment of the invention, the cathodes of the EL devices of each row of the pixel array are connected to the same scanning line (SCAN), and the anodes of the EL devices of each column are connected to the same signal line (DATA).
Alternatively, as shown in fig. 11, the scan lines and signal lines of one pixel array may be connected to a driving chip DDIC, the DDIC is connected to a main control signal HOST, and the pixel points in the pixel array are turned on or off according to the signal transmitted by HOST. For example, the size of each of the pixel arrays as shown in fig. 11 is m × n.
Alternatively, with multiple driver chips, a combination of multiple pixel arrays can be implemented to complete a larger pixel array, which in fig. 11 is a combination of z pixel arrays.
Alternatively, the number of m may be determined by the pixel size of the display device.
Alternatively, the number of n may be determined by the pixel size of the display device.
Optionally, z is an integer greater than or equal to 1. For example, z may be 2 or 3. Here, the number of the carbon atoms is not particularly limited.
In summary, the present invention provides a flip chip structure of an electroluminescent device and a display apparatus, the flip chip structure includes: the device comprises an electroluminescent device, an anode flip chip connecting wire connected with an anode of the electroluminescent device and a cathode flip chip connecting wire connected with a cathode of the electroluminescent device, wherein an insulating layer is arranged between the anode flip chip connecting wire and the cathode flip chip connecting wire. In the invention, a capacitor is formed between the anode flip chip connecting wire and the cathode flip chip connecting wire, the reaction speed of applying an electric signal to the EL device can be slowed down through the capacitor, when a disturbance signal exists, the voltage signal change of the disturbance signal is small, the influence of non-ideal disturbance can be reasonably reduced under the condition of reducing the reaction speed, and the display stability is enhanced.
It should be understood that equivalents and modifications of the technical solution and inventive concept thereof may occur to those skilled in the art, and all such modifications and alterations should fall within the scope of the appended claims.

Claims (10)

1. A flip chip structure of an electroluminescent device, the flip chip structure being disposed on a substrate, comprising: the device comprises an electroluminescent device, an anode flip chip connecting wire connected with an anode of the electroluminescent device and a cathode flip chip connecting wire connected with a cathode of the electroluminescent device, wherein an insulating layer is arranged between the anode flip chip connecting wire and the cathode flip chip connecting wire, so that a capacitor connected with the electroluminescent device in parallel is formed between the anode flip chip connecting wire and the cathode flip chip connecting wire.
2. The flip chip structure of claim 1, wherein the anodic flip chip wires comprise a first wire, a second wire, and a third wire; the insulating layer is arranged between the second connecting wire and the cathode flip chip connecting wire; the insulating layer is arranged between the third connecting wire and the cathode flip chip connecting wire.
3. The flip chip structure of claim 2, wherein the second wire is bent to have a first origin at the anode of the electroluminescent device, and the second wire comprises a first sub-wire connected to the first origin and a second sub-wire connected to the first sub-wire and perpendicular to the first sub-wire; the third connecting line is bent and comprises a third sub-connecting line connected with the first origin and a fourth sub-connecting line which is connected with the third sub-connecting line and forms a right angle with the third sub-connecting line; the first sub-connecting line and the third sub-connecting line form an angle of 180 degrees, and the second sub-connecting line and the fourth sub-connecting line are parallel; the first connecting line is at right angles to the first sub-connecting line and the third sub-connecting line.
4. The flip chip structure of claim 3, wherein the cathode flip chip connection line is parallel to the second sub-connection line and the fourth sub-connection line.
5. The flip chip structure of claim 1, wherein the anode flip chip wires comprise a fourth wire and a fifth wire connected to the fourth wire and at a right angle to the fourth wire, and the cathode flip chip wires comprise a sixth wire and a seventh wire connected to the sixth wire and at a right angle to the sixth wire; the insulating layer is arranged between the fourth connecting line and the sixth connecting line, and the insulating layer is arranged between the fifth connecting line and the seventh connecting line.
6. The flip chip structure of claim 5, wherein the fifth wire is bent to have a first origin at the anode of the electroluminescent device, and the fifth wire comprises a fifth sub-wire connected to the first origin and a sixth sub-wire connected to the fifth sub-wire and perpendicular to the fifth sub-wire; the fifth sub-connecting line is perpendicular to the fourth connecting line, and the sixth sub-connecting line is parallel to the fourth connecting line.
7. The flip chip structure of claim 5, wherein the sixth wire is bent to use the cathode of the electroluminescent device as a second origin, and the sixth wire comprises a seventh sub-wire connected to the second origin and an eighth sub-wire connected to the seventh sub-wire and perpendicular to the seventh sub-wire; the seventh sub-connecting line is perpendicular to the seventh connecting line, and the eighth sub-connecting line is parallel to the seventh connecting line.
8. The flip chip structure of claim 1, wherein the anode flip chip wires comprise an eighth wire, a ninth wire and a tenth wire; the cathode flip chip connecting wire comprises an eleventh connecting wire, a twelfth connecting wire and a thirteenth connecting wire; the insulating layer is arranged between the ninth connecting line and the twelfth connecting line, and the insulating layer is arranged between the tenth connecting line and the thirteenth connecting line.
9. The flip chip structure of claim 8, wherein the ninth wire is connected to the eighth wire and is at a right angle to the eighth wire; the tenth connecting line is connected with the eighth connecting line and the ninth connecting line and forms a right angle with the eighth connecting line; the twelfth connecting line is connected with the eleventh connecting line and forms a right angle with the eleventh connecting line; the thirteenth wire is connected to the eleventh wire and the twelfth wire and is at a right angle to the eleventh wire.
10. A display device, comprising a substrate and a plurality of flip chip structures of electroluminescent devices as claimed in any one of claims 1 to 9 disposed on the substrate, wherein each of the electroluminescent devices is arranged in an array on the substrate, the electroluminescent devices in each row of the array are connected to the same scanning line, and the electroluminescent devices in each column of the array are connected to the same signal line; and the anode of each electroluminescent device is connected with the scanning line, and the cathode of each electroluminescent device is connected with the scanning line.
CN201911312110.0A 2019-12-18 2019-12-18 Crystal coated structure of electroluminescent device and display device Active CN111129003B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911312110.0A CN111129003B (en) 2019-12-18 2019-12-18 Crystal coated structure of electroluminescent device and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911312110.0A CN111129003B (en) 2019-12-18 2019-12-18 Crystal coated structure of electroluminescent device and display device

Publications (2)

Publication Number Publication Date
CN111129003A true CN111129003A (en) 2020-05-08
CN111129003B CN111129003B (en) 2022-07-29

Family

ID=70498381

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911312110.0A Active CN111129003B (en) 2019-12-18 2019-12-18 Crystal coated structure of electroluminescent device and display device

Country Status (1)

Country Link
CN (1) CN111129003B (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1176497A (en) * 1996-09-09 1998-03-18 株式会社东芝 Semiconductor light emitting diode and method for manufacturing the same
US20030090447A1 (en) * 2001-09-21 2003-05-15 Hajime Kimura Display device and driving method thereof
CN103872082A (en) * 2012-12-12 2014-06-18 乐金显示有限公司 Organic light emitting diode display having high luminescence
US20150115256A1 (en) * 2013-10-30 2015-04-30 Samsung Display Co., Ltd. Organic light-emitting diode (oled) display
US20160163780A1 (en) * 2014-12-06 2016-06-09 Lg Display Co., Ltd. Organic light emitting display device
US20160301027A1 (en) * 2014-03-05 2016-10-13 Boe Technology Group Co., Ltd. Oled display panel, method for manufacturing the same and display apparatus
US20190165072A1 (en) * 2017-09-27 2019-05-30 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Flexible display panel and manufacturing method thereof
US20190229172A1 (en) * 2017-10-23 2019-07-25 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Oled panel and manufacturing method thereof
US20190288055A1 (en) * 2017-09-29 2019-09-19 Sharp Kabushiki Kaisha Display device
CN110429114A (en) * 2019-07-23 2019-11-08 武汉华星光电半导体显示技术有限公司 Preparation method, display panel and the display device of display panel

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1176497A (en) * 1996-09-09 1998-03-18 株式会社东芝 Semiconductor light emitting diode and method for manufacturing the same
US20030090447A1 (en) * 2001-09-21 2003-05-15 Hajime Kimura Display device and driving method thereof
CN103872082A (en) * 2012-12-12 2014-06-18 乐金显示有限公司 Organic light emitting diode display having high luminescence
US20150115256A1 (en) * 2013-10-30 2015-04-30 Samsung Display Co., Ltd. Organic light-emitting diode (oled) display
US20160301027A1 (en) * 2014-03-05 2016-10-13 Boe Technology Group Co., Ltd. Oled display panel, method for manufacturing the same and display apparatus
US20160163780A1 (en) * 2014-12-06 2016-06-09 Lg Display Co., Ltd. Organic light emitting display device
US20190165072A1 (en) * 2017-09-27 2019-05-30 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Flexible display panel and manufacturing method thereof
US20190288055A1 (en) * 2017-09-29 2019-09-19 Sharp Kabushiki Kaisha Display device
US20190229172A1 (en) * 2017-10-23 2019-07-25 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Oled panel and manufacturing method thereof
CN110429114A (en) * 2019-07-23 2019-11-08 武汉华星光电半导体显示技术有限公司 Preparation method, display panel and the display device of display panel

Also Published As

Publication number Publication date
CN111129003B (en) 2022-07-29

Similar Documents

Publication Publication Date Title
KR102658459B1 (en) Display device
CN108364982B (en) OLED display device
CN108182886B (en) Array substrate, display panel and display device
US10424248B2 (en) Display panel and display device
US10997905B2 (en) Display panel and display device
CN110085646B (en) Organic light emitting display panel and display device
CN107221536A (en) Array substrate, special-shaped display and display device
US20210319748A1 (en) Display substrate, display panel and display apparatus
CN210575035U (en) Array substrate and display panel
US11791347B2 (en) Light-emitting substrate and display device
CN111627976B (en) Organic light emitting display device
CN113471264B (en) Display panel and display device
CN110047895A (en) Organic light emitting display panel and display device
US20210118976A1 (en) Display panel and display device
US20190281700A1 (en) Flexible film and display apparatus having the same
CN111463254B (en) Display panel and display device
CN111129003B (en) Crystal coated structure of electroluminescent device and display device
CN114743504B (en) Pixel circuit, display panel and display device
CN110675819A (en) Connecting circuit of display panel light-emitting device
CN114649394A (en) Display panel and display device
CN111883509A (en) Display panel
CN111540303A (en) Drive circuit and display device
CN113380869B (en) Display panel and display device
CN116052531B (en) Display substrate and display device
CN211604647U (en) Drive circuit and display device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant