CN111128944A - High-performance capacitor lead frame - Google Patents
High-performance capacitor lead frame Download PDFInfo
- Publication number
- CN111128944A CN111128944A CN201911392358.2A CN201911392358A CN111128944A CN 111128944 A CN111128944 A CN 111128944A CN 201911392358 A CN201911392358 A CN 201911392358A CN 111128944 A CN111128944 A CN 111128944A
- Authority
- CN
- China
- Prior art keywords
- lead frame
- copper
- antimony
- aluminum
- manganese
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 48
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052802 copper Inorganic materials 0.000 claims abstract description 52
- 239000010949 copper Substances 0.000 claims abstract description 52
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 28
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 27
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 27
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract description 27
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 229910052709 silver Inorganic materials 0.000 claims abstract description 27
- 239000004332 silver Substances 0.000 claims abstract description 27
- 229910052718 tin Inorganic materials 0.000 claims abstract description 27
- 239000002994 raw material Substances 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 16
- 238000005303 weighing Methods 0.000 claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 8
- 239000011133 lead Substances 0.000 claims description 8
- 239000011135 tin Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Conductive Materials (AREA)
Abstract
The invention discloses a high-performance capacitor lead frame which is prepared from the following raw materials in percentage by mass: 0.15-0.25% of silver, 0.20-0.30% of aluminum, 0.05-0.08% of manganese, 0.15-0.25% of tin, 0.45-0.62% of silicon, 0.90-1.50% of lead, 0.03-0.04% of antimony, 0.01-0.02% of rare earth elements and the balance of copper and inevitable trace impurities.
Description
Technical Field
The invention relates to the technical field of capacitor lead frames, in particular to a high-performance capacitor lead frame.
Background
The lead frame is used as a chip carrier of an integrated circuit, is a key structural member for realizing the electrical connection between a leading-out end of an internal circuit of a chip and an external lead by means of bonding materials (gold wires, aluminum wires and copper wires) to form an electrical circuit, plays a role of a bridge connected with an external lead, needs to be used in most semiconductor integrated blocks and is an important basic material in the electronic information industry.
There are TO, DIP, ZIP, SIP, SOP, SSOP, TSSOP, QFP (QFJ), SOD, SOT, etc. The production is mainly carried out by a die stamping method and a chemical etching method. The lead frame uses the following raw materials: KFC, C194, C7025, FeNi42, TAMAC-15, PMC-90, etc. The choice of material depends mainly on the desired properties of the product: (strength, electrical conductivity, and thermal conductivity).
The conventional capacitive lead frame has low conductivity, which may easily cause failure or poor relief of electronic devices, and therefore, an improved technique for solving the problem in the prior art is needed.
Disclosure of Invention
The present invention is directed to a high performance capacitor lead frame, which solves the above problems.
In order to achieve the purpose, the invention provides the following technical scheme: a high-performance capacitor lead frame is prepared from the following raw materials in percentage by mass: 0.15 to 0.25% of silver, 0.20 to 0.30% of aluminum, 0.05 to 0.08% of manganese, 0.15 to 0.25% of tin, 0.45 to 0.62% of silicon, 0.90 to 1.50% of lead, 0.03 to 0.04% of antimony, 0.01 to 0.02% of rare earth elements, and the balance of copper and inevitable trace impurities.
Preferably, the material is prepared from the following raw materials in percentage by mass: 0.2% of silver, 0.25% of aluminum, 0.07% of manganese, 0.2% of tin, 0.55% of silicon, 1.25% of lead, 0.03% of antimony, 0.015% of rare earth elements and the balance of copper and inevitable trace impurities.
Preferably, the preparation method comprises the following steps:
the method comprises the following steps: weighing copper materials according to the percentage, adding the copper materials into a heating furnace, and dissolving the copper materials into copper liquid;
step two: weighing silver, aluminum, manganese, tin, silicon, lead, antimony and rare earth elements according to the percentage, and adding the silver, the aluminum, the manganese, the tin, the silicon, the lead, the antimony and the rare earth elements into a heating furnace;
step three: and injecting the obtained mixed copper liquid into a vacuum mold, and cooling to obtain the high-performance capacitor lead frame.
Compared with the prior art, the invention has the beneficial effects that:
the conductivity of the capacitor lead frame manufactured by the invention is greatly improved compared with that of the traditional capacitor lead frame.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a technical scheme that: a high-performance capacitor lead frame is prepared from the following raw materials in percentage by mass: 0.15 to 0.25% of silver, 0.20 to 0.30% of aluminum, 0.05 to 0.08% of manganese, 0.15 to 0.25% of tin, 0.45 to 0.62% of silicon, 0.90 to 1.50% of lead, 0.03 to 0.04% of antimony, 0.01 to 0.02% of rare earth elements, and the balance of copper and inevitable trace impurities.
A high-performance capacitor lead frame is prepared by the following steps:
the method comprises the following steps: weighing copper materials according to the percentage, adding the copper materials into a heating furnace, and dissolving the copper materials into copper liquid;
step two: weighing silver, aluminum, manganese, tin, silicon, lead, antimony and rare earth elements according to the percentage, and adding the silver, the aluminum, the manganese, the tin, the silicon, the lead, the antimony and the rare earth elements into a heating furnace;
step three: and injecting the obtained mixed copper liquid into a vacuum mold, and cooling to obtain the high-performance capacitor lead frame.
The first embodiment is as follows:
a high-performance capacitor lead frame is prepared from the following raw materials in percentage by mass: 0.15% of silver, 0.2% of aluminum, 0.05% of manganese, 0.15% of tin, 0.45% of silicon, 0.90% of lead, 0.03% of antimony, 0.01% of rare earth elements, and the balance of copper and inevitable trace impurities.
A high-performance capacitor lead frame is prepared by the following steps:
the method comprises the following steps: weighing copper materials according to the percentage, adding the copper materials into a heating furnace, and dissolving the copper materials into copper liquid;
step two: weighing silver, aluminum, manganese, tin, silicon, lead, antimony and rare earth elements according to the percentage, and adding the silver, the aluminum, the manganese, the tin, the silicon, the lead, the antimony and the rare earth elements into a heating furnace;
step three: and injecting the obtained mixed copper liquid into a vacuum mold, and cooling to obtain the high-performance capacitor lead frame.
The electric conductivity of the capacitor lead frame manufactured by the embodiment is tested, and the electric conductivity of the capacitor lead frame is greatly improved compared with that of the traditional capacitor lead frame.
Example two:
a high-performance capacitor lead frame is prepared from the following raw materials in percentage by mass: 0.18% of silver, 0.22% of aluminum, 0.06% of manganese, 0.17% of tin, 0.50% of silicon, 1.05% of lead, 0.03% of antimony, 0.01% of rare earth elements, and the balance of copper and inevitable trace impurities.
A high-performance capacitor lead frame is prepared by the following steps:
the method comprises the following steps: weighing copper materials according to the percentage, adding the copper materials into a heating furnace, and dissolving the copper materials into copper liquid;
step two: weighing silver, aluminum, manganese, tin, silicon, lead, antimony and rare earth elements according to the percentage, and adding the silver, the aluminum, the manganese, the tin, the silicon, the lead, the antimony and the rare earth elements into a heating furnace;
step three: and injecting the obtained mixed copper liquid into a vacuum mold, and cooling to obtain the high-performance capacitor lead frame.
The capacitor lead frame manufactured in the embodiment is subjected to a conductivity test, and the conductivity of the capacitor lead frame manufactured in the embodiment is better than that of the capacitor lead frame manufactured in the first embodiment.
Example three:
a high-performance capacitor lead frame is prepared from the following raw materials in percentage by mass: 0.2% of silver, 0.25% of aluminum, 0.07% of manganese, 0.2% of tin, 0.55% of silicon, 1.25% of lead, 0.03% of antimony, 0.015% of rare earth elements and the balance of copper and inevitable trace impurities.
A high-performance capacitor lead frame is prepared by the following steps:
the method comprises the following steps: weighing copper materials according to the percentage, adding the copper materials into a heating furnace, and dissolving the copper materials into copper liquid;
step two: weighing silver, aluminum, manganese, tin, silicon, lead, antimony and rare earth elements according to the percentage, and adding the silver, the aluminum, the manganese, the tin, the silicon, the lead, the antimony and the rare earth elements into a heating furnace;
step three: and injecting the obtained mixed copper liquid into a vacuum mold, and cooling to obtain the high-performance capacitor lead frame.
The capacitor lead frame manufactured in the embodiment is subjected to a conductivity test, and the conductivity of the capacitor lead frame manufactured in the embodiment is better than that of the capacitor lead frame manufactured in the second embodiment.
Example four:
a high-performance capacitor lead frame is prepared from the following raw materials in percentage by mass: 0.22% of silver, 0.28% of aluminum, 0.08% of manganese, 0.23% of tin, 0.58% of silicon, 1.40% of lead, 0.04% of antimony, 0.02% of rare earth elements, and the balance of copper and inevitable trace impurities.
A high-performance capacitor lead frame is prepared by the following steps:
the method comprises the following steps: weighing copper materials according to the percentage, adding the copper materials into a heating furnace, and dissolving the copper materials into copper liquid;
step two: weighing silver, aluminum, manganese, tin, silicon, lead, antimony and rare earth elements according to the percentage, and adding the silver, the aluminum, the manganese, the tin, the silicon, the lead, the antimony and the rare earth elements into a heating furnace;
step three: and injecting the obtained mixed copper liquid into a vacuum mold, and cooling to obtain the high-performance capacitor lead frame.
The capacitor lead frame manufactured in the embodiment is subjected to a conductivity test, and the conductivity of the capacitor lead frame manufactured in the embodiment is slightly lower than that of the capacitor lead frame manufactured in the third embodiment.
Example five:
a high-performance capacitor lead frame is prepared from the following raw materials in percentage by mass: 0.25% of silver, 0.30% of aluminum, 0.08% of manganese, 0.25% of tin, 0.62% of silicon, 1.50% of lead, 0.04% of antimony, 0.02% of rare earth elements, and the balance of copper and inevitable trace impurities.
A high-performance capacitor lead frame is prepared by the following steps:
the method comprises the following steps: weighing copper materials according to the percentage, adding the copper materials into a heating furnace, and dissolving the copper materials into copper liquid;
step two: weighing silver, aluminum, manganese, tin, silicon, lead, antimony and rare earth elements according to the percentage, and adding the silver, the aluminum, the manganese, the tin, the silicon, the lead, the antimony and the rare earth elements into a heating furnace;
step three: and injecting the obtained mixed copper liquid into a vacuum mold, and cooling to obtain the high-performance capacitor lead frame.
The capacitor lead frame manufactured in the embodiment is subjected to a conductivity test, and the conductivity of the capacitor lead frame manufactured in the embodiment is slightly lower than that of the capacitor lead frame manufactured in the third embodiment.
The capacitor lead frames prepared in the first to fifth embodiments are subjected to conductivity tests, so that the conductivity is greatly improved compared with that of the traditional capacitor lead frame, and the capacitor lead frame prepared in the third embodiment has the best performance.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (3)
1. A high performance capacitor lead frame, its characterized in that: the material is prepared from the following raw materials in percentage by mass: 0.15 to 0.25% of silver, 0.20 to 0.30% of aluminum, 0.05 to 0.08% of manganese, 0.15 to 0.25% of tin, 0.45 to 0.62% of silicon, 0.90 to 1.50% of lead, 0.03 to 0.04% of antimony, 0.01 to 0.02% of rare earth elements, and the balance of copper and inevitable trace impurities.
2. The high performance capacitive lead frame of claim 1, wherein: the material is prepared from the following raw materials in percentage by mass: 0.2% of silver, 0.25% of aluminum, 0.07% of manganese, 0.2% of tin, 0.55% of silicon, 1.25% of lead, 0.03% of antimony, 0.015% of rare earth elements and the balance of copper and inevitable trace impurities.
3. The high performance capacitive lead frame of claim 1, wherein: the preparation method comprises the following steps:
the method comprises the following steps: weighing copper materials according to the percentage, adding the copper materials into a heating furnace, and dissolving the copper materials into copper liquid;
step two: weighing silver, aluminum, manganese, tin, silicon, lead, antimony and rare earth elements according to the percentage, and adding the silver, the aluminum, the manganese, the tin, the silicon, the lead, the antimony and the rare earth elements into a heating furnace;
step three: and injecting the obtained mixed copper liquid into a vacuum mold, and cooling to obtain the high-performance capacitor lead frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911392358.2A CN111128944B (en) | 2019-12-30 | 2019-12-30 | High-performance capacitor lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911392358.2A CN111128944B (en) | 2019-12-30 | 2019-12-30 | High-performance capacitor lead frame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111128944A true CN111128944A (en) | 2020-05-08 |
| CN111128944B CN111128944B (en) | 2021-12-10 |
Family
ID=70504770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911392358.2A Active CN111128944B (en) | 2019-12-30 | 2019-12-30 | High-performance capacitor lead frame |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111128944B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4605532A (en) * | 1984-08-31 | 1986-08-12 | Olin Corporation | Copper alloys having an improved combination of strength and conductivity |
| CN1221216A (en) * | 1997-12-26 | 1999-06-30 | 三星航空产业株式会社 | Lead frame and method of plating lead frame |
| CN1310454A (en) * | 2000-01-27 | 2001-08-29 | 日矿金属株式会社 | Copper alloy for electronic material |
| CN101113498A (en) * | 2007-07-13 | 2008-01-30 | 宁波博威集团有限公司 | High-strength highly-conductive low-calcium boron chromic zirconium copper alloy and method for manufacturing same |
| US8697496B1 (en) * | 2012-10-04 | 2014-04-15 | Texas Instruments Incorporated | Method of manufacture integrated circuit package |
| CN105705666A (en) * | 2013-11-08 | 2016-06-22 | Ｊｘ金属株式会社 | Copper alloy plate, and electronic part for heat dissipation use which is equipped with same |
-
2019
- 2019-12-30 CN CN201911392358.2A patent/CN111128944B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4605532A (en) * | 1984-08-31 | 1986-08-12 | Olin Corporation | Copper alloys having an improved combination of strength and conductivity |
| CN1221216A (en) * | 1997-12-26 | 1999-06-30 | 三星航空产业株式会社 | Lead frame and method of plating lead frame |
| CN1310454A (en) * | 2000-01-27 | 2001-08-29 | 日矿金属株式会社 | Copper alloy for electronic material |
| CN101113498A (en) * | 2007-07-13 | 2008-01-30 | 宁波博威集团有限公司 | High-strength highly-conductive low-calcium boron chromic zirconium copper alloy and method for manufacturing same |
| US8697496B1 (en) * | 2012-10-04 | 2014-04-15 | Texas Instruments Incorporated | Method of manufacture integrated circuit package |
| US20140175626A1 (en) * | 2012-10-04 | 2014-06-26 | Texas Instruments Incorporated | Integrated circuit package and method of manufacture |
| CN105705666A (en) * | 2013-11-08 | 2016-06-22 | Ｊｘ金属株式会社 | Copper alloy plate, and electronic part for heat dissipation use which is equipped with same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111128944B (en) | 2021-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101314832B (en) | Iron alloy material, semiconductor lead frame made of iron alloy material and method of manufacturing the same | |
| CN203423167U (en) | Semiconductor device | |
| US20090152694A1 (en) | Electronic device | |
| CN102714201B (en) | Semiconductor packages and method | |
| CN215220710U (en) | Semiconductor device with a plurality of semiconductor chips | |
| US20150014829A1 (en) | Copper Leadframe Finish for Copper Wire Bonding | |
| US20080290487A1 (en) | Lead frame for semiconductor device | |
| CN104916606A (en) | Semiconductor device and method of manufacturing the same | |
| TW201330189A (en) | A package structure and the method to fabricate thereof | |
| US10861828B2 (en) | Molded semiconductor package having a package-in-package structure and methods of manufacturing thereof | |
| CN111128944B (en) | High-performance capacitor lead frame | |
| CN108598058B (en) | Copper alloy bonding wire and manufacturing method thereof | |
| US9379088B2 (en) | Stacked package of voltage regulator and method for fabricating the same | |
| US20200243428A1 (en) | Packaged multichip module with conductive connectors | |
| JP2017126733A (en) | High-density integrated circuit package structure and integrated circuit | |
| CN103050451A (en) | Double-row pin quad flat no lead packaging piece and insulating treatment method thereof | |
| US20220199500A1 (en) | Method of manufacturing semiconductor devices, component for use therein and corresponding semiconductor device | |
| CN106796896A (en) | Semiconductor device | |
| CN104347550A (en) | Substrateless device and the method to fabricate thereof | |
| CN109256368A (en) | SOT23-X lead frame and its packaging method | |
| US6921967B2 (en) | Reinforced die pad support structure | |
| WO2018191500A1 (en) | Integration of a passive component in a cavity of an integrated circuit package | |
| US20070205493A1 (en) | Semiconductor package structure and method for manufacturing the same | |
| KR20110029829A (en) | A rolled leadframe and manufacturing method the same | |
| KR20200093636A (en) | Power semiconductor patch packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |