CN111128834B - Micro-component transfer apparatus and method of manufacturing the same - Google Patents
Micro-component transfer apparatus and method of manufacturing the same Download PDFInfo
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- CN111128834B CN111128834B CN201811291808.4A CN201811291808A CN111128834B CN 111128834 B CN111128834 B CN 111128834B CN 201811291808 A CN201811291808 A CN 201811291808A CN 111128834 B CN111128834 B CN 111128834B
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Abstract
The application discloses microelement transfer equipment and a manufacturing method thereof, the microelement transfer equipment comprises a substrate and a patterned electrode layer positioned above the substrate, the patterned electrode layer comprises a first lead, a first electrode, a second lead and a second electrode, the first lead is connected with the first electrode, the second lead is connected with the second electrode, and the second electrode is arranged around the first electrode. By redesigning the electrode structure of the transfer head of the micro-component transfer equipment and adopting the double-electrode arrangement structure with the second electrode surrounding the first electrode, the uniformity of electric field distribution between the two electrodes is improved, the stress uniformity of the micro-component after the micro-component is adsorbed is improved, the damage of the micro-component caused by uneven stress in the transfer process and the falling of the micro-component from the transfer head are reduced, and the transfer yield is improved.
Description
Technical Field
The application relates to the field of micro devices, in particular to micro element transfer equipment and a manufacturing method thereof.
Background
Micro light emitting diodes (Micro-LEDs) refer to micron-sized Light Emitting Diodes (LEDs) that are first epitaxially grown on a substrate such as quartz, and then the LEDs are transferred to a glass substrate to complete the connection of the LEDs to a driving transistor (TFT). In the pick-up and transfer process of Micro-LEDs, the LEDs are generally picked up from the donor wafer by using techniques such as electrostatic adsorption, magnetic adsorption, van der waals force action, vacuum adsorption, etc., and transferred to the receiving substrate. Whether the stress of a single Micro-LED is uniform and controllable in the transferring process directly influences the possibility of damage of the device, and meanwhile, the transferring yield is influenced.
Among the conventional transfer techniques, there is a transfer technique using an electrostatic force, as shown in fig. 1, in which a parallel two-electrode structure 1 is used on a transfer head, and an electric field is generated by applying a voltage to the transfer head, thereby attracting a single Micro-LED unit. However, the electrode structure design of the transfer head needs to be optimized, and the stress uniformity and transfer yield of the Micro-LED during the transfer process need to be improved.
Disclosure of Invention
The technical problem that the present application mainly solves is to provide a micro component transfer apparatus and a method for manufacturing the same, which can improve the stress uniformity when the micro component is adsorbed, thereby improving the transfer yield.
In order to solve the technical problem, the application adopts a technical scheme that: there is provided a micro-component transfer apparatus including: the patterned electrode layer comprises a first lead, a first electrode, a second lead and a second electrode, the first lead is connected with the first electrode, the second lead is connected with the second electrode, and the second electrode surrounds the first electrode.
In order to solve the above technical problem, another technical solution adopted by the present application is: provided is a manufacturing method of a micro-component transfer device, comprising the following steps: providing a substrate; forming a patterned electrode layer on a substrate; the patterned electrode layer comprises a first lead, a first electrode, a second lead and a second electrode; the first lead is connected with the first electrode, and the second lead is connected with the second electrode; wherein the second electrode is disposed around the first electrode.
The beneficial effect of this application is: be different from prior art's condition, this application carries out redesign to micro-component transfer equipment's transfer overhead electrode structure, adopts the second electrode to encircle the bipolar electrode arrangement structure of first electrode to improve the homogeneity of electric field distribution between two electrodes, thereby improve the atress homogeneity of micro-component after adsorbing the micro-component, and reduce the micro-component because of the inhomogeneous damage that causes of atress and from shifting overhead droing in the transfer process, and then improve and shift the yield.
Drawings
FIG. 1 is a schematic diagram of an embodiment of an electrode structure on a transfer head in the prior art;
fig. 2 is a schematic structural view of a first embodiment of the present microelement transfer apparatus;
FIG. 3 is a cross-sectional side view taken along line A-A' in FIG. 2;
fig. 4 is a schematic structural diagram of another embodiment of the micro-component transfer head according to the present application, in which the first lead and the second lead are electrically connected to the first electrode or the second electrode;
fig. 5 is a schematic structural view of a second embodiment of the micro-component transfer apparatus of the present application;
FIG. 6 is a cross-sectional side view taken along line B-B' in FIG. 5;
fig. 7 is a schematic flow chart illustrating an embodiment of a method for manufacturing a micro-component transfer apparatus according to the present application;
FIG. 8 is a schematic flow chart diagram illustrating one embodiment of S82 of FIG. 7;
fig. 9 is a schematic flow chart of another embodiment of S82 in fig. 7.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments obtained by a person of ordinary skill in the art without any creative effort based on the embodiments in the present application belong to the protection scope of the present application.
In order to improve the stress condition of the micro-component in the transfer process and reduce the damage and the falling off of the micro-component from the transfer head caused by uneven stress in the transfer process, thereby improving the transfer yield, the application provides the micro-component transfer equipment, the electrode structure on the transfer head of the micro-component transfer equipment is redesigned, and a double-electrode arrangement structure with a second electrode surrounding a first electrode is adopted to improve the uniformity of electric field distribution between the two electrodes, thereby improving the stress uniformity of the micro-component after the micro-component is adsorbed. The present application is described in detail below with reference to the attached figures.
Referring to fig. 2 and 3, fig. 2 is a schematic structural view of a first embodiment of the present invention, and fig. 3 is a cross-sectional side view taken along line a-a' of fig. 2. The micro-component transferring device comprises a substrate 11 and a patterned electrode layer 12 located above the substrate, wherein the patterned electrode layer 12 comprises a first conducting wire 121, a first electrode 122, a second conducting wire 123 and a second electrode 124, the first conducting wire 121 is connected with the first electrode 122, the second conducting wire 123 is connected with the second electrode 124, and the second electrode 124 is arranged around the first electrode 122.
The substrate 11 may be made of one or more rigid materials such as ceramic, polymer, and plastic, and is used for supporting the patterned electrode layer 12. The substrate 11 may comprise connections to external control circuitry for controlling the micro-component transfer device.
The patterned electrode layer 12 may form the first conductive line 121, the second conductive line 123, the first electrode 122, and the second electrode 124 through deposition of a film layer and patterning of the deposited film layer. The deposition method includes physical vapor deposition, electroplating or electroless plating or other suitable methods, and the patterning method includes photolithography and etching, laser engraving, or other suitable methods. The first conductive line 121, the second conductive line 123, the first electrode 122, and the second electrode 124 may be made of one or more conductive materials such as Indium Tin Oxide (ITO), metal alloy, and the like.
The first wire 121 and the second wire 123 in the patterned electrode layer 12 each include an electrode outer lead 1211/1231 and an electrode inner lead 1212/1232 connected to each other, an electrode outer lead 1211/1231 is connected to the plurality of electrode inner leads 1212/1232, the electrode outer lead 1211/1231 is used for connecting an external control circuit, the electrode inner lead 1212 of the first wire 121 is further electrically connected to the first electrode 122, and the electrode inner lead 1232 of the second wire 123 is further electrically connected to the second electrode 124. The electrode inner leads 1212 of the first wire 121 and the electrode inner leads 1232 of the second wire 123 are alternately arranged in parallel, and each electrode inner lead 1212/1232 is connected to a plurality of first electrodes 122 or second electrodes 124. Specifically, each electrode inner lead 1212/1232 includes a plurality of electrode side leads 12121/12321 and an electrode main lead 12122/12322, wherein one end of each electrode side lead 12121/12321 is connected to the electrode main lead 12122/12322, and the other end is connected to a first electrode 122 or a second electrode 124, and a first electrode 122 and the second electrode 124 surrounding the first electrode 122 constitute a transfer head.
Further, the patterned electrode layer 12 of the micro-component transferring apparatus further includes a second insulating layer 126, and the second insulating layer 126 covers the surfaces of the first electrode 122 and the second electrode 124 and the surrounding area thereof. The plurality of transfer heads in this embodiment are arranged at regular intervals, the surface of the second insulating layer corresponding to each transfer head forms a transfer plane 1261, and the transfer plane 1261 has a height H with respect to the surface of the second insulating layer between the transfer heads, so that when the transfer plane 1261 is used for transferring micro-components, local contact points can be provided to pick up a specific micro-component during a pick-up operation. In addition, a second insulating layer 126 covers the surface areas of the first electrode 122 and the second electrode 124 of the transfer head and fills the area between the first electrode 122 and the second electrode 124 of the transfer head to constitute a transfer plane 1261 and to avoid that the electrodes of the transfer head are in direct contact with the microcomponents when they are transferred. If the electrodes of the transfer head are in direct contact with the micro-component during the transfer of the micro-component, charge on the micro-component may be transferred to the electrodes, which may prevent the adsorption effect.
Optionally, the height H is 3 to 30 micrometers, and the distance D between two adjacent transfer planes is 5 to 10 micrometers, and in an actual use process, the height H and the distance D can be adaptively changed according to the size of the micro-component to be transferred.
Preferably, the second electrode 124 has a regular polygonal or circular shape, and the first electrode 122 is located at a central position of the second electrode 124. When the transfer head transfers the micro-component, the polarities of the first electrode 122 and the second electrode 124 are opposite, and an electrostatic field is generated between the first electrode 122 and the second electrode 124, so that radial electric field lines uniformly distributed to the second electrode 124 with the first electrode 122 as the center are formed, and the force uniformity of the micro-component after the micro-component is adsorbed can be improved.
The electrode outer lead 1211 of the first lead 121 and the electrode outer lead 1231 of the second lead 123 are arranged in parallel at intervals, the plurality of electrode inner leads 1212/1232 alternately arranged in parallel at intervals are positioned between the two electrode outer leads 1211/1231 arranged in parallel at intervals and are perpendicular to the electrode outer leads 1211/1231, and the plurality of transfer heads are arranged between the two adjacent electrode inner leads 1212/1232. The transfer heads are uniformly arranged at intervals, and when the micro-component transfer equipment transfers the micro-components, the transfer plane of one transfer head correspondingly adsorbs and transfers one micro-component.
Specifically, the electrode outer lead 1211 of the first wire 121 and the electrode outer lead 1231 of the second wire 123 are electrically connected to the positive electrode or the negative electrode of the external control circuit via the wiring of the substrate 11. When the micro-component transfer equipment transfers the micro-component, the transfer head can be switched between an adsorption state and a release state, the transfer head can adsorb the micro-component in the adsorption state, the transfer head can release the micro-component in the release state, when the transfer head is in the adsorption state, the electrode polarities of the first electrode 122 and the second electrode 124 of the transfer head are opposite, and an electric field can be generated between the first electrode 122 and the second electrode 124, so that the micro-component can be adsorbed by static electricity when being close to the transfer head. In this embodiment, the second electrode 124 of the transfer head is disposed around the first electrode 122, when the transfer head transfers a micro-component, the polarities of the first electrode 122 and the second electrode 124 are opposite, an electrostatic field is generated between the first electrode 122 and the second electrode 124, and radial electric field lines distributed to the second electrode 124 with the first electrode 122 as the center are formed between the first electrode 122 and the second electrode 124, so as to improve the force uniformity of the micro-component after the micro-component is adsorbed, thereby avoiding the damage of the micro-component and the falling off from the transfer plane of the transfer head, and further improving the transfer yield.
Continuing to refer to fig. 3, in one embodiment, the patterned electrode layer 12 may be an alternating stack of conductive and insulating layers, and may be formed by deposition and patterning of the deposited layers. Specifically, the micro-component transferring device includes a substrate 11, a wire layer, a first insulating layer 125, and an electrode layer, which are sequentially stacked, wherein the first wire 121 and the second wire 123 are located on the wire layer, and the first electrode 122 and the second electrode 124 are located on the electrode layer. The first insulating layer 125 is provided with at least two first through holes 1251 communicating the lead layer and the electrode layer, wherein the electrode inner lead 1212 of the first lead 121 is connected to the first electrode 122 through one first through hole 1251, and the electrode inner lead 1232 of the second lead 123 is connected to the second electrode 124 through the other first through hole 1251. Compared with the process of forming the first conducting wire, the first electrode, the second conducting wire and the second electrode in the same layer by deposition and patterning of the deposited film layer, although the number of process steps is increased, the process requirement is not high, and the actual operation is facilitated.
Alternatively, referring to fig. 2 and fig. 4, fig. 2 is a schematic structural diagram of a first embodiment of the micro-component transfer apparatus of the present application, and fig. 4 is a schematic structural diagram of another embodiment of the micro-component transfer apparatus of the present application, in which the first conducting wire 121 and the second conducting wire 123 are electrically connected to the first electrode 122 or the second electrode 124. As shown in fig. 2 and 4, in another embodiment, each of the electrode inner leads 1212/1232 includes an electrode main lead 12122/12322 and a plurality of electrode side leads 12121/12321 connected to the electrode main lead 12122/12322, and the electrode side leads 12121/12321 are perpendicular to the electrode main lead 12122/12322, wherein the electrode side lead 12121/12321 has a protrusion 121211/123211 at a side away from the substrate 11 to achieve connection between the electrode side lead 12121/12321 and the first electrode 122 or the second electrode 124, so that a through hole communicating the electrode inner lead 1212/1232 and the first electrode 122 or the second electrode 124 does not need to be provided in an insulating layer, and a process of forming the through hole is reduced.
Different from the prior art, the micro-component transfer device of the embodiment redesigns the electrode structure on the transfer head of the micro-component transfer device, and adopts a double-electrode arrangement structure that the second electrode surrounds the first electrode so as to improve the uniformity of electric field distribution between the two electrodes, thereby improving the stress uniformity of the micro-component after the micro-component is adsorbed, reducing the damage and falling off from the transfer head caused by uneven stress of the micro-component in the transfer process, and further improving the transfer yield.
Referring to fig. 5 and 6, fig. 5 is a schematic structural view of a second embodiment of the micro-component transfer apparatus of the present application, and fig. 6 is a cross-sectional side view taken along line B-B' of fig. 5. The micro-component transferring device comprises a substrate 21 and a patterned electrode layer located above the substrate, wherein the patterned electrode layer comprises a first conducting wire 221, a first electrode 222, a second conducting wire 223 and a second electrode 224, the first conducting wire 221 is connected with the first electrode 222, the second conducting wire 223 is connected with the second electrode 224, and the second electrode 224 is arranged around the first electrode 222.
The substrate 21 may be made of one or more rigid materials such as ceramic, polymer, and plastic, and is used to support the patterned electrode layer. The substrate 21 may include wiring connected to an external control circuit for controlling the micro-component transfer apparatus. The first conductive line 221, the second conductive line 223, the first electrode 222, and the second electrode 224 may be made of one or more conductive materials such as Indium Tin Oxide (ITO), metal alloy, and the like.
The first lead 221 and the second lead 223 in the patterned electrode layer each include an electrode outer lead 2211/2231 and an electrode inner lead 2212/2232 that are electrically connected to each other, an electrode outer lead 2211/2231 is connected to the plurality of electrode inner leads 2212/2232, the electrode outer lead 2211/2231 is used for connecting an external control circuit, the electrode inner lead 2212 of the first lead 221 is further electrically connected to the first electrode 222, and the electrode inner lead 2232 of the second lead 223 is further electrically connected to the second electrode 224. The electrode inner leads 2212 of the first lead 221 and the electrode inner leads 2232 of the second lead 223 are alternately spaced and arranged in parallel, and each electrode inner lead 2212/2232 is connected to a plurality of first electrodes 222 or second electrodes 224. Specifically, each electrode inner lead 2212/2232 includes a plurality of electrode side leads 22121/22321 and an electrode main lead 22122/22322, one end of each electrode side lead 22121/22321 is connected to the electrode main lead 22122/22322, and the other end is connected to a first electrode 222 or a second electrode 224, and the first electrode 222 and the second electrode 224 surrounding the first electrode form a transfer head.
Preferably, the second electrode 224 has a shape of a regular polygon or a circle, and the first electrode 222 is located at a central position of the second electrode. When the transfer head transfers the micro-component, the polarities of the first electrode 222 and the second electrode 224 are opposite, and an electrostatic field is generated between the first electrode 222 and the second electrode 224, so that radial electric field lines uniformly distributed to the second electrode 224 with the first electrode 222 as a center are formed, and the force uniformity of the micro-component after the micro-component is adsorbed can be improved.
Further, the micro-component transferring apparatus is configured such that the second insulating layer 226 is disposed on the surfaces of the first electrode 222 and the second electrode 224 of the transferring head and the surrounding area thereof, so that the surface of the second insulating layer corresponding to each transferring head forms a transferring plane 2261, and the transferring plane 2261 has a height H relative to the surface of the second insulating layer between the transferring heads, so that when the transferring plane is used for transferring micro-components, a local contact point can be provided, thereby picking up a specific micro-component during a picking-up operation. In addition, a second insulating layer 226 covers the surface area of the first electrode 222 and the second electrode 224 in the transfer head and fills the area between the first electrode 222 and the second electrode 224 in the transfer head, resulting in a transfer plane 2261 to avoid direct contact of the electrodes of the transfer head with the micro-component when transferring the micro-component. If the electrode of the transfer head is directly in contact with the micro-component when the micro-component is transferred, the electric charge on the micro-component may be transferred to the electrode, and the adsorption effect may not be achieved.
Optionally, the height H is 3 to 30 micrometers, and the distance D between two adjacent transfer planes is 5 to 10 micrometers, and in an actual use process, the height H and the distance D can be adaptively changed according to the size of the micro-component to be transferred.
The electrode outer leads 2211 of the first lead 221 and the electrode outer leads 2231 of the second lead 223 are arranged in parallel at intervals, the plurality of electrode inner leads 2212/2232 alternately arranged in parallel at intervals are positioned between the two electrode outer leads 2211/2231 arranged in parallel at intervals and are perpendicular to the electrode outer leads 2211/2231, and a plurality of transfer heads are arranged between the two adjacent electrode inner leads 2212/2232. The plurality of transfer heads are uniformly arranged at intervals, and when the micro-component transfer equipment transfers the micro-components, the transfer plane of one transfer head correspondingly adsorbs and transfers one micro-component.
Specifically, the electrode outer lead 2211 of the first wire 221 and the electrode outer lead 2231 of the second wire 223 are electrically connected to a positive electrode or a negative electrode of an external control circuit via a wiring or a through hole of the substrate 11. When the micro-component transfer device transfers a micro-component, the transfer head can be switched between an adsorption state and a release state, the transfer head can adsorb the micro-component in the adsorption state, the transfer head can release the micro-component in the release state, when the transfer head is in the adsorption state, the electrode polarities of the first electrode 222 and the second electrode 224 of the transfer head are opposite, and an electric field can be generated between the first electrode 222 and the second electrode 224, so that the micro-component can be adsorbed by static electricity when being close to the transfer head. In this embodiment, the second electrode 224 of the transfer head is disposed around the first electrode 222, when the transfer head transfers the micro-component, the polarities of the first electrode 222 and the second electrode 224 are opposite, an electrostatic field is generated between the first electrode 222 and the second electrode 224, and radial electric field lines distributed to the second electrode 224 with the first electrode 222 as a center are formed between the first electrode 222 and the second electrode 224, so that the micro-component is uniformly stressed during the transfer process, thereby preventing the micro-component from being damaged and falling off from the transfer plane of the transfer head, and further improving the transfer yield.
Continuing to refer to fig. 6, in one embodiment, the patterned electrode layer may be an alternating stack of conductive and insulating layers, and may be formed by deposition and patterning of the deposited film layer. Specifically, the micro-component transfer apparatus includes a substrate 21, a third insulating layer 227, an electrode outer lead layer 2211/2231, a fourth insulating layer 228, an electrode inner lead layer 2212/2232, a first insulating layer 225, an electrode layer, and a second insulating layer 226 which are sequentially stacked, the first electrode 222 and the second electrode 224 are disposed on the electrode layers, the third insulating layer 227 is provided with at least two second through holes (not shown) for communicating the electrode outer lead 2211/2231 with an external control circuit, the fourth insulating layer 228 is provided with at least two third through holes 2281 for communicating the electrode inner lead 2212/2232 with the electrode outer lead 2211/2231, the first insulating layer 225 is provided with at least two first through holes 2251 for communicating the electrode inner lead 2212/2232 with the first electrode layer 222/the second electrode layer 224, and the second insulating layer 226 covers the surface and the surrounding area of the first electrode layer 222/the second electrode layer 224. Compared with the process of forming the electrode outer lead of the first lead, the electrode outer lead of the second lead, the electrode inner lead of the first lead and the electrode inner lead of the second lead in the same layer by deposition and patterning of the deposited film layer, the process steps of the embodiment are increased, but the process requirements are not high, and the process is favorable for actual operation.
Different from the prior art, the micro-component transferring device of the embodiment redesigns the structure of the electrode/insulator platform on the transferring head of the micro-component transferring device, adopts a double-electrode arrangement structure that the second electrode surrounds the first electrode, and forms the patterned electrode layer in a way that the conducting layers and the insulating layers are alternately stacked, so that the uniformity of electric field distribution between the two electrodes can be improved, the stress uniformity of the micro-component after the micro-component is adsorbed is improved, the damage and the falling-off of the micro-component from the transferring head caused by uneven stress in the transferring process are reduced, the transferring yield is improved, the process requirement for forming the patterned electrode layer can be reduced, and the micro-component transferring device is beneficial to actual operation.
Referring to fig. 7, fig. 7 is a schematic flow chart illustrating a manufacturing method of a micro device transfer apparatus according to an embodiment of the present disclosure. The manufacturing method of the micro-component transfer equipment comprises the following steps:
s81: a substrate is provided.
The substrate may be made of one or more insulating materials such as ceramic, polymer, plastic, etc. The substrate comprises connections to external control circuitry for controlling the micro-component transfer device.
S82: a patterned electrode layer is formed on a substrate.
The patterned electrode layer can form a first lead, a second lead, a first electrode and a second electrode by depositing the film layer and patterning the deposited film layer, wherein the first lead is connected with the first electrode, and the second lead is connected with the second electrode; wherein the second electrode is disposed around the first electrode. The deposition method includes physical vapor deposition, electroplating or electroless plating or other suitable methods, and the patterning method includes photolithography and etching, laser scribing or other suitable methods. The first conductive wire, the second conductive wire, the first electrode and the second electrode may be made of one or more of Indium Tin Oxide (ITO), metal alloy and other conductive materials.
Specifically, a first wire and a second wire in the patterned electrode layer respectively comprise an electrode outer lead and an electrode inner lead which are connected with each other, the electrode outer lead is connected with the electrode inner leads, the electrode outer lead is used for being connected with an external control circuit, the electrode inner lead of the first wire is electrically connected with the first electrode, and the electrode inner lead of the second wire is electrically connected with the second electrode. The electrode inner leads of the first wires and the electrode inner leads of the second wires are alternately arranged in parallel at intervals, and each electrode inner lead is connected with a plurality of first electrodes or second electrodes. A first electrode and a second electrode surrounding the first electrode constitute a transfer head. Further, the patterned electrode layer further comprises a second insulating layer, and the second insulating layer covers the surfaces of the first electrode and the second electrode and the surrounding area of the first electrode and the second electrode. The plurality of transfer heads in this embodiment are uniformly spaced, the surface of the second insulating layer corresponding to each transfer head forms a transfer plane, and the transfer plane has a height relative to the surface of the second insulating layer between the transfer heads, so that when the transfer plane is used for transferring micro-components, a local contact point can be provided, thereby picking up a specific micro-component during a pick-up operation.
The electrode outer leads of the first lead and the electrode outer leads of the second lead are arranged in parallel at intervals, a plurality of electrode inner leads which are alternately arranged in parallel at intervals are positioned between the two electrode outer leads which are arranged in parallel at intervals and are perpendicular to the electrode outer leads, and a plurality of transfer heads are arranged between the two adjacent electrode inner leads. The plurality of transfer heads are uniformly arranged at intervals, and when the micro-component transfer equipment transfers the micro-components, the transfer plane of one transfer head correspondingly adsorbs and transfers one micro-component.
Preferably, the second electrode has a shape of a regular polygon or a circle, and the first electrode is located at a central position of the second electrode. When the transfer head transfers the micro-component, the polarities of the first electrode and the second electrode are opposite, an electrostatic field is generated between the first electrode and the second electrode, radial electric field lines which are uniformly distributed to the second electrode by taking the first electrode as a center are formed, and the stress uniformity of the micro-component after the micro-component is adsorbed can be improved.
Alternatively, in one embodiment, as shown in fig. 8, fig. 8 is a schematic flow chart of an embodiment of S82 in fig. 7. S82 specifically includes the steps of:
s8201: forming a first lead and a second lead on a substrate;
s8202: forming a first insulating layer on the first and second conductive lines;
s8203: at least two first through holes which correspond to the first lead and the second lead and penetrate through the first insulating layer up and down are formed in the first insulating layer.
S8204: and forming a first electrode and a second electrode on the first insulating layer, wherein the first electrode is connected with the first lead through a first through hole, and the second electrode is connected with the first lead through another second through hole.
Compared with the process of forming the first conducting wire, the first electrode, the second conducting wire and the second electrode in the same layer by deposition and patterning of the deposited film layer, although the number of process steps is increased, the process requirement is not high, and the actual operation is facilitated.
Alternatively, in another embodiment, as shown in fig. 9, fig. 9 is a schematic flow chart of another embodiment of S82 in fig. 7. S82 specifically includes the steps of:
s8205: manufacturing a third insulating layer on the substrate;
alternatively, a through hole communicating the electrode outer lead and the substrate may be made on the third insulating layer so that the electrode outer lead can be electrically connected with an external control circuit.
S8206: manufacturing an electrode outer lead on the third insulating layer;
s8207: depositing a fourth insulating layer on the electrode outer lead and the third insulating layer not covered by the electrode outer lead;
s8208: manufacturing a second through hole for communicating the electrode outer lead and the electrode inner lead on the fourth insulating layer;
s8209: manufacturing an electrode inner lead on the fourth insulating layer;
s8210: depositing a first insulating layer on the electrode inner leads and the fourth insulating layer not covered by the electrode inner leads;
s8211: preparing a first through hole communicating the electrode inner lead and the first/second electrodes on the first insulating layer;
s8212: a first electrode and a second electrode are prepared on the first insulating layer, and the second electrode is arranged around the first electrode.
S8213: and depositing a second insulating layer on the first electrode, the second electrode and the first insulating layer which is not covered by the first electrode and the second electrode.
The second insulating layer covers the surface areas of the first electrode and the second electrode in the transfer heads and fills the area between the first electrode and the second electrode in each transfer head, so that the surface of the second insulating layer corresponding to each transfer head forms a transfer plane, and the transfer plane has a height H relative to the surface of the second insulating layer between the transfer heads, so that when the transfer plane is used for transferring the micro-component, a local contact point can be provided, and the electrode of the transfer head is prevented from directly contacting with the micro-component when the micro-component is transferred. If the electrodes of the transfer head are in direct contact with the micro-component during the transfer of the micro-component, charge on the micro-component may be transferred to the electrodes, which may prevent the adsorption effect.
Different from the prior art, the method for manufacturing the micro-component transfer device of the embodiment redesigns the structure of the electrode/insulator platform on the transfer head of the micro-component transfer device, and adopts the dual-electrode arrangement structure that the second electrode surrounds the first electrode, so as to improve the uniformity of electric field distribution between the two electrodes, thereby improving the stress condition of the micro-component after adsorbing the micro-component, reducing the damage and falling off of the micro-component from the transfer head caused by uneven stress in the transfer process, and further improving the transfer yield.
The above description is only a part of the embodiments of the present application, and not intended to limit the scope of the present application, and all equivalent devices or equivalent processes performed by the contents of the specification and the drawings of the present application, or directly or indirectly applied to other related technical fields, are also included in the scope of the present application.
Claims (9)
1. A micro-component transfer apparatus, comprising:
a substrate and a patterned electrode layer over the substrate,
the patterned electrode layer comprises a first lead, a first electrode, a second lead and a second electrode;
the first lead is connected with the first electrode, and the second lead is connected with the second electrode; the first lead and the second lead respectively comprise an electrode outer lead and an electrode inner lead which are mutually connected, one electrode outer lead is connected with a plurality of electrode inner leads, the electrode outer lead is used for being connected with an external control circuit, the electrode inner lead of the first lead is also electrically connected with the first electrode, and the electrode inner lead of the second lead is also electrically connected with the second electrode; each of the electrode inner leads includes an electrode main lead and electrode side leads connected to the electrode main lead, the electrode side leads being perpendicular to the electrode main lead, the electrode side leads having protrusions at a side away from the substrate to be electrically connected to the first or second electrode; a plurality of electrode inner leads of the first lead and a plurality of electrode inner leads of the second lead are alternately arranged in parallel at intervals;
wherein the second electrode is disposed around the first electrode; the first electrode is located at the center of the second electrode.
2. The micro-component transfer apparatus according to claim 1,
each electrode inner lead is connected with a plurality of first electrodes or second electrodes, and each first electrode and the second electrode surrounding the first electrode form a transfer head.
3. The micro-component transfer apparatus according to claim 2,
the electrode outer leads of the first lead and the electrode outer leads of the second lead are arranged in parallel at intervals, and the plurality of electrode inner leads which are alternately arranged in parallel at intervals are positioned between the two electrode outer leads which are arranged in parallel at intervals and are perpendicular to the electrode outer leads;
and a plurality of transfer heads are arranged between the adjacent two electrode inner leads.
4. The micro-component transfer apparatus according to claim 2, further comprising:
the substrate, the wire layer, the first insulating layer and the electrode layer are sequentially stacked, wherein the first wire and the second wire are located on the wire layer, and the first electrode and the second electrode are located on the electrode layer.
5. The micro-component transfer apparatus according to any one of claims 2 to 4, further comprising: a second insulating layer covering surfaces of the first and second electrodes and surrounding areas thereof.
6. The micro-component transfer apparatus according to claim 5, wherein the plurality of transfer heads are uniformly spaced, and the surface of the second insulating layer corresponding to each transfer head forms a transfer plane for adsorbing and transferring the micro-component.
7. The micro-component transfer apparatus according to claim 1, wherein the second electrode is in the shape of a regular polygon or a circle.
8. A method of fabricating a micro-component transfer apparatus, the method comprising:
providing a substrate;
forming a patterned electrode layer on the substrate;
the patterned electrode layer comprises a first lead, a first electrode, a second lead and a second electrode; the first lead is connected with the first electrode, and the second lead is connected with the second electrode; the first lead and the second lead respectively comprise an electrode outer lead and an electrode inner lead which are mutually connected, one electrode outer lead is connected with a plurality of electrode inner leads, the electrode outer lead is used for being connected with an external control circuit, the electrode inner lead of the first lead is also electrically connected with the first electrode, and the electrode inner lead of the second lead is also electrically connected with the second electrode; each of the electrode inner leads includes an electrode main lead and electrode side leads connected to the electrode main lead, the electrode side leads being perpendicular to the electrode main lead, the electrode side leads having protrusions at a side away from the substrate to be electrically connected to the first or second electrode; a plurality of electrode inner leads of the first lead and a plurality of electrode inner leads of the second lead are alternately arranged in parallel at intervals;
wherein the second electrode is disposed around the first electrode; the first electrode is located at the center of the second electrode.
9. The method of claim 8, wherein the forming a patterned electrode layer on the substrate comprises:
forming a first conductive line and a second conductive line on the substrate;
forming a first insulating layer on the first and second conductive lines;
and forming a first electrode and a second electrode on the first insulating layer, wherein the first electrode is connected with the first lead through a protrusion on the first lead, and the second electrode is connected with the second lead through a protrusion on the second lead.
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| CN201811291808.4A CN111128834B (en) | 2018-10-31 | 2018-10-31 | Micro-component transfer apparatus and method of manufacturing the same |
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| CN201811291808.4A CN111128834B (en) | 2018-10-31 | 2018-10-31 | Micro-component transfer apparatus and method of manufacturing the same |
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| JP2005285825A (en) * | 2004-03-26 | 2005-10-13 | Advantest Corp | Electrostatic chuck and method for securing substrate by electrostatic chuck |
| DE602005009344D1 (en) * | 2004-03-31 | 2008-10-09 | Applied Materials Inc | METHOD AND DEVICE FOR TRANSMITTING CONDUCTIVE PARTS IN THE MANUFACTURE OF SEMICONDUCTOR COMPONENTS |
| JP2005352091A (en) * | 2004-06-09 | 2005-12-22 | Sharp Corp | Liquid crystal display device |
| JP2006203122A (en) * | 2005-01-24 | 2006-08-03 | Seiko Epson Corp | Method of manufacturing wafer adsorber and semiconductor apparatus |
| CN2774712Y (en) * | 2005-01-27 | 2006-04-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Static chuck device |
| DE202005011367U1 (en) * | 2005-07-18 | 2005-09-29 | Retzlaff, Udo, Dr. | Transfer-ESC for moving ultra-thin chips during manufacture has a base material wafer with a multiplicity of grouped electrode cells each with an electrode tip, insulator, outer electrode cover and dielectric cover |
| CN100362644C (en) * | 2005-12-07 | 2008-01-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck |
| JP2008112763A (en) * | 2006-10-27 | 2008-05-15 | Tomoegawa Paper Co Ltd | Electrostatic chuck |
| CN101211810B (en) * | 2006-12-30 | 2011-01-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck apparatus |
| CN100595902C (en) * | 2007-10-11 | 2010-03-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | DC-type electrode used for semiconductor |
| EP2306505A4 (en) * | 2008-07-08 | 2011-09-14 | Creative Tech Corp | Bipolar electrostatic chuck |
| US9460950B2 (en) * | 2013-12-06 | 2016-10-04 | Applied Materials, Inc. | Wafer carrier for smaller wafers and wafer pieces |
| US9425151B2 (en) * | 2014-06-17 | 2016-08-23 | Apple Inc. | Compliant electrostatic transfer head with spring support layer |
| TWI623053B (en) * | 2017-04-12 | 2018-05-01 | 宏碁股份有限公司 | Method of transferring micro devices and micro device transfer apparatus |
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