KR102542182B1 - Light emitting diode element and manufacturing method thereof - Google Patents

Abstract

A method of manufacturing an LED device is disclosed. A method of manufacturing an LED device includes providing a plurality of first electrodes spaced apart from each other on a glass substrate, forming a conductive polymer layer to cover an exposed area of the glass substrate and the plurality of first electrodes, and and mounting a Light Emitting Diode (LED) chip having a plurality of second electrodes spaced apart from each other on the conductive polymer layer. Here, the plurality of second electrodes are each electrically connected to the plurality of first electrodes by conductive polymer layers.

Description

LED device and its manufacturing method {LIGHT EMITTING DIODE ELEMENT AND MANUFACTURING METHOD THEREOF}

The present disclosure relates to a micro LED device and a manufacturing method thereof.

Semiconductor light emitting diodes (Light Emitting Diodes, LEDs) are widely used not only as light sources for lighting devices, but also as light sources for various display devices of various electronic products such as TVs, mobile phones, PCs, notebook PCs, and PDAs.

In particular, recently, micro LEDs with a size of less than 100㎛ have been developed, and micro LEDs have a faster response speed, lower power, and higher brightness than conventional LEDs, and are in the limelight as light emitting devices for next-generation displays. there is.

However, a new manufacturing technology is required in that a microchip is used.

The present disclosure is in accordance with the above-described needs, and an object of the present disclosure is to provide a micro LED device electrically connected to a target substrate smoothly and a manufacturing method thereof.

A method of manufacturing an LED device according to an embodiment of the present disclosure includes providing a plurality of first electrodes spaced apart from each other on a glass substrate, covering an exposed area of the glass substrate and the plurality of first electrodes. The method may include forming a conductive polymer layer and mounting a Light Emitting Diode (LED) chip having a plurality of second electrodes spaced apart from each other on one side of the conductive polymer layer.

Here, the plurality of second electrodes may be electrically connected to each of the plurality of first electrodes by the conductive polymer layer.

A separation distance between the plurality of second electrodes may be greater than or equal to a predetermined multiple of a thickness of the conductive polymer layer.

The conductive polymer layer may have a thickness of 20 nm or more and 2 μm or less, and the predetermined multiple may be 5 times or more and 1000 times or less.

The conductive polymer layer may include a plurality of particles made of a conductive polymer.

The conductive polymer layer may be a layer including a conductive polymer inside a plurality of holes provided in a vertical direction in the non-conductive base layer.

The conductive polymer layer may be formed of PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly styrene sulfonate) material.

The conductive polymer layer may be a layer having an anisotropic property.

A value obtained by multiplying the width of the second electrode by the distance between the second electrodes may be 0.04 μm ² or more and 4 mm ² or less.

The length and width of the LED device may be 1 μm or more and 100 μm or less.

The LED element may be used as a display element of an LED display panel.

An LED device according to an embodiment of the present disclosure covers a glass substrate, a plurality of first electrodes spaced apart from each other on an upper portion of the glass substrate, an exposed area of the glass substrate, and an upper portion of the plurality of first electrodes. It may include a formed conductive polymer layer, a plurality of second electrodes formed at positions corresponding to the plurality of first electrodes on the conductive polymer layer, and light emitting diodes (LEDs) formed on the plurality of second electrodes.

Here, the separation distance between the plurality of second electrodes may be greater than or equal to a predetermined multiple of the thickness of the conductive polymer layer.

The conductive polymer layer may have a thickness of 20 nm or more and 2 μm or less.

The predetermined multiple may be 5 times or more and 1000 times or less.

The conductive polymer layer may include a plurality of particles made of a conductive polymer.

The conductive polymer layer may be a layer including a conductive polymer inside a plurality of holes provided in a vertical direction in the non-conductive base layer.

The conductive polymer layer may be formed of PEDOT: PSS (poly(3,4-ethylenedioxythiophene): poly styrene sulfonate) material.

The conductive polymer layer may have an anisotropic property.

A value obtained by multiplying the width of the second electrode by the distance between the second electrodes may be 0.04 μm ² or more and 4 mm ² or less.

The length and width of the LED device may be 1 μm or more and 100 μm or less.

As described above, according to various embodiments of the present disclosure, in a process of mounting a micro LED chip on a target substrate when manufacturing a micro LED device, the micro LED chip can be stably mounted using an adhesive conductive polymer layer. In addition, the micro LED chip can be smoothly electrically connected to the target substrate by using the conductive polymer layer.

1 is a schematic diagram showing a method for manufacturing an LED display according to an embodiment of the present disclosure.
2 is a diagram for explaining a method of manufacturing an LED device according to an embodiment of the present disclosure.
3 is a diagram for explaining a conductive polymer layer including a plurality of particles according to an embodiment of the present disclosure.
4 is a view for explaining a conductive polymer layer patterned with a block co-polymer according to another embodiment of the present disclosure.
5A to 5C are views for explaining a method of manufacturing an LED device according to an embodiment of the present disclosure.
6 is a flowchart illustrating a manufacturing process of an LED device according to an embodiment of the present disclosure.

Terms used in this specification will be briefly described, and the present disclosure will be described in detail.

The terms used in the embodiments of the present disclosure have been selected from general terms that are currently widely used as much as possible while considering the functions in the present disclosure, but they may vary depending on the intention or precedent of a person skilled in the art, the emergence of new technologies, and the like. . In addition, in a specific case, there is also a term arbitrarily selected by the applicant, and in this case, the meaning will be described in detail in the description of the disclosure. Therefore, terms used in the present disclosure should be defined based on the meaning of the term and the general content of the present disclosure, not simply the name of the term.

Embodiments of the present disclosure may apply various transformations and may have various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the scope to specific embodiments, and should be understood to include all transformations, equivalents, and substitutes included in the spirit and scope of technology disclosed. In describing the embodiments, if it is determined that a detailed description of a related known technology may obscure the subject matter, the detailed description will be omitted.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. Terms are only used to distinguish one component from another.

Singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "comprise" or "consist of" are intended to designate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other It should be understood that the presence or addition of features, numbers, steps, operations, components, parts, or combinations thereof is not precluded.

In the present disclosure, a “module” or “unit” performs at least one function or operation, and may be implemented in hardware or software or a combination of hardware and software. In addition, a plurality of "modules" or a plurality of "units" are integrated into at least one module and implemented by at least one processor (not shown), except for "modules" or "units" that need to be implemented with specific hardware. It can be.

In addition, the expression 'at least one of a, b and c' means 'a', 'b', 'c', 'a and b', 'a and c', 'b and c' or 'a, b and can be interpreted as c'.

Hereinafter, with reference to the accompanying drawings, embodiments of the present disclosure will be described in detail so that those skilled in the art can easily carry out the present disclosure. However, the present disclosure may be implemented in many different forms and is not limited to the embodiments described herein. And in order to clearly describe the present disclosure in the drawings, parts irrelevant to the description are omitted, and similar reference numerals are attached to similar parts throughout the specification.

Terms used in the embodiments of the present disclosure may be interpreted as meanings commonly known to those skilled in the art unless otherwise defined.

Hereinafter, the present disclosure will be described in detail using the accompanying drawings.

1 is a schematic diagram showing a method for manufacturing an LED display according to an embodiment of the present disclosure.

Recently, micro LED displays are beginning to be applied to various display devices such as large devices such as HMDs, smartphones and tablets, laptops/monitors, and TVs. Micro LED display refers to a display that expresses each pixel by densely arranging subminiature LEDs in units of 10 to 100 micrometers (㎛). That is, each micro LED element may be used as a sub-pixel of a display panel.

In order to implement such a micro LED display, a transfer process of precisely transferring a large number of subminiature chips to a substrate is required. Here, the transfer process is a process of transferring a single or a plurality of micro LEDs to a target substrate.

The transfer process includes a direct transfer process, a print transfer process, and the like.

The direct transfer process is a process of directly bonding a chip to be transferred to a target substrate. For example, p-type GaN (gallium nitride) is separated into micrometers through an etching process and then directly bonded to a substrate on which a switching element is formed. A silicon or sapphire substrate used as a growth substrate may be removed if necessary. Here, as the switching element, a fine switching element such as CMOS may be used.

A roll to roll method may be used for the direct transfer process. Specifically, a fine switching element such as CMOS is picked up using a cylindrical roll and placed on a temporary substrate, and an LED chip on a wafer is picked up using the roll and bonded to the substrate on which the switching element is formed. After that, it is a method of picking up a switching element and an LED chip using a roll and transferring them to a target substrate.

The print transfer process is a process of transferring an LED chip grown on a substrate to a target substrate using an intermediate medium such as a pick and place device. Hereinafter, for convenience of explanation, the pick-and-place device is collectively referred to as the transmission device 10. The transfer device 10 is a device that picks up the plurality of chips 21 disposed on the wafer 20 and places them on the target substrate 30, and may include a pick-up device 11 and a moving device 12. . Here, the print transfer process may be classified according to a pick-up method of the pick-up device 11 to be described later.

According to FIG. 1 , a pick-up device 11 picks up a plurality of chips 21 disposed on a wafer 20, and a moving device 12 transfers the picked-up chips 21 to a target substrate 30. It is possible to move and place the picked up chip on the target substrate 30 . However, before the plurality of chips 21 are picked up, a process of separating the plurality of chips 21 from the wafer 20 to become individual chips must be preceded. A laser lift-off (LLO) or a chemical lift-off (CLO) may be used for this process.

Here, the wafer 20 may be a substrate for semiconductor growth on which a semiconductor material may be grown. Specifically, the wafer 20 may be a sapphire substrate, a silicon (Si) substrate, a zinc oxide (ZnO) substrate, a nitride semiconductor substrate, or a template substrate in which at least one of GaN, InGaN, AlGaN, and AlInGaN is stacked. . For example, the wafer 20 is a sapphire substrate, on which a nitride layer having a hexagonal crystal system may be grown. However, it is not limited thereto, and the wafer 20 may be a metal substrate made of a metal material such as Cu, Cr, Ni, Ag, Au, Mo, Pd, W, or Al.

For example, an InGaN LED layer is grown on the wafer 20, a mesa structure is formed to dispose an n-type electrode, and a p-type Ni/Au transparent electrode is formed on the p-GaN. can Thereafter, Ti/Al/Mo/Au may be deposited on the n-GaN to form an n-type electrode, and a Ti/Au pad electrode may be formed on the p-type transparent electrode. Thereafter, the wafer 20 is etched using a KOH (potassium hydroxide) solution, and the remaining GaN layer may be transferred to the target substrate 30 as an LED chip.

The pickup device 11 may be implemented in various forms as long as it is connected to the moving device 12 and can pick up a plurality of chips 21 while moving. The pickup device 11 may selectively or collectively pick up the plurality of chips 21 disposed on the wafer 20 .

The pickup device 11 may pick up the plurality of chips 21 in various ways. This method is also the method of the print transfer process.

Specifically, a method for picking up the plurality of chips 21 includes an electrostatic method, an adhesive method, a vacuum method, a hybrid method, and the like.

The electrostatic method is a method in which a voltage is applied to an electrostatic head made of silicon to pick up chips on the wafer 20 and transfer them to the target substrate 30 .

The adhesion method is a method of picking up a chip on the wafer 20 using an elastic polymer material as a carrier and transferring it to the target substrate 30 . Here, the elastic polymer material may be polydimethylsiloxane (PDMS), but is not limited thereto. When the adhesive method is used, the target substrate ( 30) The adhesion of the top layer should be greater. When the adhesive force of the polymeric material that picks up the plurality of chips 21 is greater than the adhesive force of the layer on the target substrate 30, the plurality of chips 21 remain adhered to the polymeric material and thus the layer on the target substrate 30 This is because it may not be mounted on the .

The vacuum method is a method in which the pick-up device 11 adsorbs and picks up chips on the wafer 20 through vacuum pressure, moves them onto the target substrate 30, releases the vacuum pressure at a desired location, and transfers them.

The moving device 12 is a structure supporting the pickup device 11 to transport the pickup device 11, and may be coupled to a structure not shown. The moving device 12 may move the pickup device 11 through a conventional structure such as a multi-joint structure, a piston structure, and a sliding structure. The mobile device 12 may move itself while being connected to the pick-up device 11 .

The transfer device 10 can not only move up and down, left and right along the spatial coordinate system (X, Y, and Z axes) on the wafer 20 and the target substrate 30, but also rotate around the X, Y, and Z axes. .

Accordingly, after the transfer device 10 picks up the plurality of chips 21 from the wafer 20, the plurality of chips 21 picked up can be mounted in various positions of the target substrate 30. . Since the conductive polymer layer described later has adhesiveness, the plurality of chips 21 can be safely mounted on the target substrate 30 .

A plurality of chips 21 may be disposed on and grown on the wafer 20 . The plurality of chips 21 may be arranged at predetermined intervals on the XY plane. Here, the predetermined interval means a distance between one surface of one chip and one surface of another adjacent chip. The preset interval may be determined so that, for example, a plurality of chips 21 can be simultaneously picked up by the pick-up device 11 .

When one pixel is implemented as an RGB sub-pixel, the LED element may be a red, green, and blue semiconductor light emitting element constituting each sub-pixel. Since the LED element has excellent luminance, each subminiature LED element can constitute an individual sub-pixel. In this case, sub-pixels of each color may be grown on different wafers. That is, LEDs of one color may be grown on one wafer and LEDs of different colors may be grown on another wafer.

For example, a red (R) sub-pixel may be created from a wafer on which only red LEDs are grown, and a blue (B) sub-pixel may be created from a wafer on which only blue LEDs are grown. Accordingly, the red, green, and blue semiconductor light emitting elements R, G, and B are alternately disposed, and the red, green, and blue semiconductor light emitting elements emit sub-colors of red, green, and blue. Pixels form one pixel (or pixel), and through this, a full color display can be implemented.

The plurality of chips 21 according to an embodiment of the present disclosure may be LED (Micro Light Emitting Diode) chips, and specifically, may be micro LED chips. Hereinafter, for convenience of description, the chip 21 is collectively referred to as an LED chip.

Here, the micro LED is an LED manufactured to 1 μm or more and 100 μm or less. That is, the length and width of the micro LED device is 1 μm or more and 100 μm or less, and it can be manufactured through thin film growth on a sapphire or silicon substrate with an inorganic material such as Al, Ga, N, P, As, In.

The target substrate 30 is a configuration in which the LED chip 21 is disposed and physically and electrically connected to the LED chip 21 . The target substrate 30 may be a glass substrate. That is, the LED device in which the LED chip 21 is mounted on the target substrate 30 may be in the form of COG (Chip on Glass) in which the chip is mounted on a glass substrate. The COG type is an ultra-thin and lightweight mounting method with fine connection pitch that does not require a printed circuit board.

However, it is not limited thereto, and the target substrate 30 may be a conventional printed circuit board, and may have various shapes to be applied to display products.

The stage 35 is configured to load and unload the wafer 20 and the target substrate 30, respectively, and may be formed as a flat plate. The stage 35 may move relative to the transfer device 10 in a state in which the wafer 20 and the target substrate 30 are loaded.

An LED type according to an embodiment of the present disclosure may have a structure such as a lateral type, a vertical type, and a flip chip structure according to a manufacturing process. However, in the following, for convenience of description, the LED type is assumed to be a horizontal type and a flip chip.

Hereinafter, for convenience of explanation, a case in which a print transfer process is used is assumed, but it goes without saying that a direct transfer process can also be used as another embodiment of the present disclosure.

2 is a diagram for explaining a method of manufacturing an LED device according to an embodiment of the present disclosure.

That is, FIG. 2 is a diagram illustrating a process in which the LED chip 21 transferred according to FIG. 1 is mounted on the conductive polymer layer 50 and electrically connected.

According to FIG. 2, the LED device 100 may include a target substrate 30, a plurality of first electrodes 40, a conductive polymer layer 50, a plurality of second electrodes 60, and a semiconductor layer 70. can

Here, the plurality of second electrodes 60 and the semiconductor layer 70 are included in the LED chip 21 transferred to the target substrate 30 according to FIG. 1 described above.

A plurality of first electrodes 40 may be spaced apart from each other on the target substrate 30 . Here, the target substrate 30 may be a flexible substrate. For example, the target substrate 30 may include glass or polyimide (PI, Polyimide). In addition, as long as it is an insulating and flexible material, for example, PEN (Polyethylene Naphthalate), PET (Polyethylene Terephthalate), etc. may be used. In addition, the target substrate 30 may be any of a transparent material or an opaque material.

Hereinafter, for convenience of description, the target substrate 30 is commonly referred to as a glass substrate.

The plurality of first electrodes 40 may be indium tin oxide (ITO), aluminum zinc oxide (AZO), indium zinc oxide (IZO), ZnO, GZO (ZnO:Ga), In2O3, SnO2, CdO, CdSnO4, or Ga2O3. can The plurality of first electrodes 40 may be referred to as a transparent electrode or a transparent electrode layer, but hereinafter, the plurality of first electrodes 40 will be collectively referred to for convenience of explanation.

As the plurality of first electrodes 40 and the plurality of second electrodes 60 are electrically connected, the LED device 100 can emit light having predetermined energy. Here, a conductive polymer layer 50 having conductivity is formed between the target substrate 30 and the semiconductor layer 70 so that the plurality of first electrodes 40 and the plurality of second electrodes 60 are electrically connected. can The plurality of second electrodes 60 may be formed of a material similar to that of the plurality of first electrodes 40 .

The conductive polymer layer 50 may be formed to cover the exposed area of the glass substrate 30 and the plurality of first electrodes 40 .

The plurality of second electrodes 60 may be formed at positions corresponding to the plurality of first electrodes 40 on the conductive polymer layer 50 . For example, the plurality of second electrodes 60 may be disposed at positions where the center of each of the plurality of second electrodes 60 coincides with or is similar to the center of each of the plurality of first electrodes 40 .

The semiconductor layer 70 is a layer remaining after the LED chip 21 is etched from the wafer 20 before being transferred to the glass substrate 30 . It is disposed on the conductive polymer layer 50 together with the plurality of second electrodes 60 by the transmission device 10 . The semiconductor layer 70 is a layer in which a plurality of second electrodes 60 are disposed on one side surface, and may be a layer formed of GaN (gallium nitride).

3 is a diagram for explaining a conductive polymer layer including a plurality of particles according to an embodiment of the present disclosure.

According to FIG. 3 , the conductive polymer layer 50 may include a plurality of particles 52 made of conductive polymer.

Here, each of the plurality of particles 52 may be implemented with nickel and gold or nickel, gold, and silver. However, as long as the particle has conductivity, it can be implemented in various forms regardless of the type of material.

The conductive polymer layer 50 may be implemented in a form in which a material including a plurality of conductive particles 52 is coated on the glass substrate 30 or laminated as a film.

4 is a view for explaining a conductive polymer layer patterned with a block co-polymer according to another embodiment of the present disclosure.

FIG. 4A is a view for explaining how the conductive polymer layer 50 patterned with the block copolymer covers the exposed area of the glass substrate 30 and the plurality of first electrodes 40 .

4B is an enlarged view of the conductive polymer layer 50 patterned with the block copolymer. Here, the block copolymer is a polymer composed of two or more polymers through a covalent bond, and one polymer may be a block different from another polymer in terms of chemical structure or configuration.

The conductive polymer layer 50 may be a layer including a conductive polymer inside a plurality of holes 56 provided in a vertical direction in the non-conductive base layer 54 . Since the plurality of holes 56 in the vertical direction have conductivity and the base layer 54 is made of a non-conductive material, conduction in the horizontal direction is blocked by the base layer 54 and conduction in the vertical direction is conductive. (56) can be made possible. That is, the conductive polymer layer 50 has an anisotropic property having no conductivity in the horizontal direction but only conductivity in the vertical direction. Here, anisotropy is a property in which the physical properties of an object vary depending on the direction, and in the present disclosure, it may be a property in which conductivity in a horizontal direction and a vertical direction are different.

The conductive polymer layer 50 includes a conductive polymer inside a plurality of holes 56 provided in a vertical direction in the non-conductive base layer 54 and includes a plurality of first electrodes 40 and a plurality of second electrodes 60 Since are arranged in a direction perpendicular to each other, the plurality of first electrodes 40 and the plurality of second electrodes 60 can be easily electrically connected.

Here, the base layer 54 may be formed of a non-conductive polymer-based material, and the polymer disposed inside the plurality of holes 56 may be formed of a material having conductivity. For example, the polymer disposed inside the plurality of holes 56 may be formed of a poly(3,4-ethylenedioxythiophene):poly styrene sulfonate (PEDOT:PSS) material, but is not limited thereto. The plurality of holes 56 may be spaced apart from each other.

However, if the conductivity in the vertical direction is greater than the conductivity in the horizontal direction, the block copolymer may be patterned and implemented in various shapes such as sphere, gyroid, and lamellae as well as the cylinder shape shown in FIG. 4B. can

5A to 5C are views for explaining a method of manufacturing an LED device according to an embodiment of the present disclosure.

The LED device 100 may be a micro LED device having a length and width of 1 μm or more and 100 μm or less. In addition, the LED device 100 may be a device used as a display device of an LED display panel. That is, each micro LED element may be used as a sub-pixel of a display panel.

First, as shown in FIG. 5A , a glass substrate 30 may be provided, and a plurality of first electrodes 40 spaced apart from each other may be provided on the glass substrate 30 . Here, the plurality of first electrodes 40 are indium tin oxide (ITO), aluminum zinc oxide (AZO), indium zinc oxide (IZO), ZnO, GZO (ZnO:Ga), In2O3, SnO2, CdO, CdSnO4, Cu , Ag, Al, Ni, Au or Ga2O3.

After a photo process of inserting a circuit pattern on the glass substrate 30 , a plurality of first electrodes 40 may be prepared through a deposition process. For the deposition process, physical vapor deposition (PVD) and chemical vapor deposition (CVD) using chemical reactions may be used.

The plurality of first electrodes 40 may be spaced apart from each other by a predetermined distance. For example, the predetermined distance between the plurality of first electrodes 40 may be 0.5 μm or more and 100 μm or less, preferably 5 μm or more and 50 μm or less. Here, the predetermined distance may be changed according to the characteristics of the LED element as a distance set in the electrode manufacturing step. For example, a predetermined distance between the plurality of first electrodes 40 may be changed based on the distance between the plurality of second electrodes 60 . One of the first electrode 40 and the second electrode 60 is an anode and the other is a cathode. The anode and cathode of the first electrode 40 and the second electrode 60 are respectively coupled.

Subsequently, as shown in FIG. 5B , a conductive polymer layer 50 may be formed to cover the exposed region of the glass substrate 30 and the plurality of first electrodes 40 . Here, the thickness 55 of the conductive polymer layer 50 may be 20 nm or more and 2 μm or less.

According to one embodiment of the present disclosure, the conductive polymer layer 50 may include a plurality of particles made of a conductive polymer.

Here, each of the plurality of particles may be implemented with nickel and gold or nickel, gold, and silver. However, as long as the particle has conductivity, it can be implemented in various forms regardless of the type of material.

The conductive polymer layer 50 may be implemented in a form in which a material including a plurality of conductive particles is coated on the glass substrate 30 or laminated as a film.

According to another embodiment, the conductive polymer layer 50 may be patterned with a block co-polymer. A block copolymer is a polymer in which two or more polymers are covalently bonded, and one polymer may be a block different from another polymer in terms of chemical structure or configuration.

The conductive polymer layer 50 may be a layer including a conductive polymer inside a plurality of holes provided in a direction perpendicular to the non-conductive base layer. Since the plurality of holes in the vertical direction are conductive, and the base layer is made of a non-conductive material, conduction in the horizontal direction is blocked by the base layer, and conduction in the vertical direction is enabled by the conductive holes. That is, the conductive polymer layer 50 has an anisotropic property of having no conductivity in the horizontal direction but only conductivity in the vertical direction. Since the plurality of first electrodes 40 and the plurality of second electrodes 60 are disposed in a direction perpendicular to each other, the plurality of first electrodes 40 and the plurality of second electrodes 60 can be easily electrically connected. .

Here, the base layer 54 is formed of a non-conductive polymer-based material, and the conductive polymer inside the plurality of holes may be formed of a poly(3,4-ethylenedioxythiophene):poly styrene sulfonate (PEDOT:PSS) material. , but is not limited thereto. A plurality of holes 56 may be spaced apart from each other.

However, if the conductivity in the vertical direction is greater than the conductivity in the horizontal direction, the block copolymer may be patterned and implemented in various shapes such as sphere, gyroid, and lamellae as well as the cylinder shape shown in FIG. 4B. can

Subsequently, as shown in FIG. 5C, a Light Emitting Diode (LED) chip including a semiconductor layer 70 provided with a plurality of second electrodes 60 spaced apart from each other on one side is placed on the conductive polymer layer 50. can be mounted.

The transfer device 10 may pick up the LED chip 21 disposed on the wafer 20 and move it onto the glass substrate 30 . That is, the LED chip 21 grown on the wafer 20 may be moved to the glass substrate 30 as a target substrate and mounted on the conductive polymer layer 50 .

The transmission device 10 may selectively or collectively pick up the LED chips 21 disposed on the wafer 20, and, if necessary, an adhesive method, a vacuum method, an electrostatic method, or a hybrid ( The LED chip 21 may be picked up in various ways such as a hybrid method.

Here, the electrostatic method is a method in which a voltage is applied to an electrostatic head made of silicon to pick up the LED chip 21 on the wafer 20 and transfer it to the glass substrate 30 . The adhesion method is a method of picking up the LED chip 21 on the wafer 20 using a polymeric material having elasticity as a carrier and transferring it to the glass substrate 30 . Here, the elastic polymer material may be polydimethylsiloxane (PDMS), but is not limited thereto.

Here, since the conductive polymer layer 50 has adhesiveness, the LED chip 21 can be safely mounted on the glass substrate 30 . When the adhesive method is used as a method of picking up the LED chip 21, the conductive polymer layer rather than the elastic polymer material that picks up the LED chip 21 in order for the LED chip 21 to be mounted on the conductive polymer layer 50. The adhesion of (50) should be greater.

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The distance 65 between the plurality of second electrodes 60 is set such that the plurality of second electrodes 60 correspond to the plurality of first electrodes 40 , so that the LED chip 21 can be manufactured. For example, the plurality of second electrodes 60 are arranged such that the center of each of the plurality of second electrodes 60 coincides with or is similar to the center of each of the plurality of first electrodes 40 ( 60), the separation distance 65 between them may be determined, and the LED chip 21 may be manufactured.

The plurality of second electrodes 60 may be electrically connected to the plurality of first electrodes 40 through the conductive polymer layer 50 , respectively. If the second electrode 60 is one of an anode and a cathode, the first electrode 40 may be the other electrode. For example, if the second electrode 60 is an anode, the first electrode 40 electrically connected to the second electrode 60 may be a cathode. Alternatively, if the second electrode 60 is a cathode, the first electrode 40 may be an anode.

Here, the separation distance 65 between the plurality of second electrodes 60 may be greater than or equal to a predetermined multiple of the thickness 55 of the conductive polymer layer 50 . For example, the thickness 55 of the conductive polymer layer 50 is 20 nm or more and 2 μm or less, and the predetermined multiple may be 2 times or more and 1000 times or less, preferably 5 times or more and 1000 times or less.

The conductive polymer layer 50 may have an anisotropic property by using a difference in the separation distance 65 between the plurality of second electrodes 60 and the thickness of the conductive polymer layer 50 . Here, the anisotropy may be a property in which conductivity in the horizontal direction and in the vertical direction are different. Here, the conductive polymer layer 50 may be formed of PEDOT:PSS (poly(3,4-ethylenedioxythiophene): poly styrene sulfonate) material.

For example, when the separation distance 65 between the plurality of second electrodes 60 is 5 μm and the thickness of the conductive polymer layer 50 is 50 nm, the conductivity in the vertical direction is about 100 times greater than the conductivity in the horizontal direction. can be big As conductivity in the vertical direction is greater than conductivity in the horizontal direction, the plurality of first electrodes 40 and the plurality of second electrodes 60 can be easily electrically connected. This is because the plurality of first electrodes 40 and the plurality of second electrodes 60 are disposed perpendicular to each other.

In addition, a value obtained by multiplying the width 66 of each of the plurality of second electrodes 60 and the separation distance 65 between the plurality of second electrodes may be 0.04 μm ² or more and 4 mm ² or less.

The semiconductor layer 70 is a layer remaining after the LED chip 21 is etched from the wafer 20 before being transferred to the glass substrate 30 . It is disposed on the conductive polymer layer 50 together with the plurality of second electrodes 60 by the transmission device 10 . The semiconductor layer 70 is a layer in which a plurality of second electrodes 60 are disposed on one side surface, and may be a layer formed of GaN (gallium nitride).

6 is a flowchart illustrating a manufacturing process of an LED device according to an embodiment of the present disclosure.

First, a glass substrate 30 may be prepared, and a plurality of first electrodes 40 spaced apart from each other may be provided on the glass substrate (S610).

Subsequently, a conductive polymer layer 50 may be formed to cover the exposed region of the glass substrate 30 and the plurality of first electrodes 40 (S620).

Here, the conductive polymer layer 50 may include a plurality of particles 52 made of conductive polymer. Alternatively, the conductive polymer layer 50 may be a layer including a conductive polymer inside a plurality of holes 56 provided in a vertical direction in the non-conductive base layer 54 .

The conductive polymer layer 50 may be formed of PEDOT:PSS (poly(3,4-ethylenedioxythiophene): poly styrene sulfonate) material. In addition, the conductive polymer layer 50 may have an anisotropic property. Here, anisotropy is a property in which conductivity in the horizontal direction and vertical direction are different, and in the present disclosure, conductivity in the vertical direction may be a property that is greater than conductivity in the horizontal direction.

Subsequently, a Light Emitting Diode (LED) chip provided with a plurality of second electrodes 60 spaced apart from each other on one side may be mounted on the conductive polymer layer 50 (S630).

Here, the separation distance between the plurality of second electrodes 60 is greater than or equal to a predetermined multiple of the thickness of the conductive polymer layer 50 . The thickness of the conductive polymer layer 50 is 20 nm or more and 2 μm or less, and the predetermined multiple may be 2 times or more and 1000 times or less, preferably 5 times or more and 1000 times or less.

Here, the plurality of second electrodes 60 may be electrically connected to each of the plurality of first electrodes 40 by the conductive polymer layer 50 (S640).

The LED device 100 may be a micro LED having a length and width of 1 μm or more and 100 μm or less, and the LED device 100 may be used as a display device of an LED display panel. That is, each micro LED element may be used as a sub-pixel of a display panel.

The aforementioned terms such as “deposition” and “growth” may mean forming a semiconductor material layer.

Also, what is described as being "on" another component, such as a layer or substrate, may be directly on the other component or intervening elements may exist therebetween.

In the above, various embodiments of the present disclosure have been individually described, but each embodiment is not necessarily implemented alone, and the configuration and operation of each embodiment may be implemented in combination with at least one other embodiment. .

In addition, although the preferred embodiments of the present disclosure have been shown and described above, the present disclosure is not limited to the specific embodiments described above, and the technical field to which the present invention pertains without departing from the subject matter of the present disclosure claimed in the claims. Of course, various modifications are possible by those skilled in the art, and these modifications should not be individually understood from the technical spirit or perspective of the present disclosure.

10: transfer device 20: wafer
30: target substrate 40: a plurality of first electrodes
50: conductive polymer layer 60: a plurality of second electrodes

Claims (18)

providing a plurality of first electrodes spaced apart from each other on a glass substrate;
forming a conductive polymer layer to cover the exposed region of the glass substrate and the plurality of first electrodes; and
Mounting a Light Emitting Diode (LED) chip having a plurality of second electrodes spaced apart from one side on the conductive polymer layer,
The plurality of second electrodes are each electrically connected to the plurality of first electrodes by the conductive polymer layer,
The conductive polymer layer,
A method for manufacturing an LED device, which is a layer containing a conductive polymer inside a plurality of holes provided in a direction perpendicular to a non-conductive base layer.
According to claim 1,
The separation distance between the plurality of second electrodes is greater than or equal to a predetermined multiple of the thickness of the conductive polymer layer.
According to claim 2,
The thickness of the conductive polymer layer is 20 nm or more and 2 μm or less,
The predetermined multiple is 5 times or more and 1000 times or less, manufacturing method.
According to claim 1,
The conductive polymer layer,
A manufacturing method comprising a plurality of particles implemented with a conductive polymer.
delete According to claim 1,
The conductive polymer layer,
A manufacturing method formed of PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly styrene sulfonate) material.
According to claim 1,
The conductive polymer layer,
A manufacturing method having anisotropic properties.
According to claim 1,
A value obtained by multiplying the width of the second electrode and the distance between the second electrodes is 0.04 μm ² or more and 4 mm ² or less, the manufacturing method.
According to claim 1,
The length and width of the LED element is 1 μm or more and 100 μm or less, manufacturing method.
According to claim 1,
The LED element,
Used as a display element of an LED display panel, a manufacturing method.
a glass substrate;
a plurality of first electrodes spaced apart from each other on the glass substrate;
a conductive polymer layer formed to cover the exposed region of the glass substrate and the plurality of first electrodes;
a plurality of second electrodes formed on the conductive polymer layer at positions corresponding to the plurality of first electrodes; and
Including; LED (Light Emitting Diode) formed on the plurality of second electrodes,
The distance between the plurality of second electrodes is greater than or equal to a predetermined multiple of the thickness of the conductive polymer layer,
The conductive polymer layer,
A layer containing a conductive polymer inside a plurality of holes provided in a direction perpendicular to a non-conductive base layer, an LED device.
◈Claim 12 was abandoned when the registration fee was paid.◈ According to claim 11,
The thickness of the conductive polymer layer is 20 nm or more and 2 μm or less,
The predetermined multiple is 5 times or more and 1000 times or less, the LED device.
◈Claim 13 was abandoned when the registration fee was paid.◈ According to claim 11,
The conductive polymer layer,
An LED device comprising a plurality of particles implemented with a conductive polymer.
delete ◈Claim 15 was abandoned when the registration fee was paid.◈ According to claim 11,
The conductive polymer layer,
An LED device made of PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly styrene sulfonate) material.
◈Claim 16 was abandoned when the registration fee was paid.◈ According to claim 11,
The conductive polymer layer,
An LED element having an anisotropic property.
◈Claim 17 was abandoned when the registration fee was paid.◈ According to claim 11,
A value obtained by multiplying the width of the second electrode and the distance between the second electrodes is 0.04 μm ² or more and 4 mm ² or less, the LED device.
◈Claim 18 was abandoned when the registration fee was paid.◈ According to claim 11,
The length and width of the LED element is 1㎛ or more and 100㎛ or less, the LED element.

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