CN111128781A - Method and system for measuring complete etching time of metal and storage medium - Google Patents
Method and system for measuring complete etching time of metal and storage medium Download PDFInfo
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- CN111128781A CN111128781A CN201911372267.2A CN201911372267A CN111128781A CN 111128781 A CN111128781 A CN 111128781A CN 201911372267 A CN201911372267 A CN 201911372267A CN 111128781 A CN111128781 A CN 111128781A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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Abstract
The invention provides a method, a system and a storage medium for measuring the complete etching time of metal, wherein the method for measuring the complete etching time of metal comprises a database establishing step, an acquisition step, a first calculation step and a second calculation step, wet etching is carried out by adopting different etching times, corresponding etching thicknesses are recorded, the etching speeds of multiple times of etching are calculated, the average etching speed is obtained by taking the average value, and finally, according to a formula: the metal complete etching time is the thickness of the metal layer/average etching rate, and the metal complete etching time is calculated. The method for measuring the metal complete etching time can calculate the metal complete etching time more accurately and avoid human errors.
Description
Technical Field
The invention relates to the field of display panel measurement, in particular to a method and a system for measuring complete metal etching time and a storage medium.
Background
EPD (end point detect) refers to the time of complete etching of metal, and usually, a new piece of copper acid is introduced to monitor the time of complete etching of metal with different copper thicknesses, and the OE amount of the acid under different etching times is calculated.
In G8.5 glass substrate production line, the original calculation mode is the mode of human eye observation, plates a layer copper on the base plate, and wet etching board establishes longer etching seconds, then calculates with the stopwatch, and the time point that human eye observation large tracts of land metal colour disappears, because everyone's reaction time is different, different calculators can have the error of a few seconds.
The whole metal is opaque, the film thickness cannot be measured, only the resistance value is monitored, and the measured value cannot be calculated by a Scanning Electron Microscope (SEM) method because the previous value is not available. .
Therefore, there is a need for a new method, system and storage medium for measuring the metal etching completion time, which can calculate the metal etching completion time more accurately and avoid human error.
Disclosure of Invention
The invention aims to provide a method and a system for measuring the complete metal etching time and a storage medium, which can calculate the complete metal etching time more accurately and avoid human errors.
The invention provides a method for measuring the complete etching time of metal, which comprises the following steps: a database establishing step, namely acquiring the etching thicknesses of the metal layers etched for multiple times and the etching time corresponding to the etching thicknesses, and storing the etching thicknesses and the etching time into a database; an acquisition step of acquiring the etching thickness and the corresponding etching time from the database; a first calculation step of calculating the etching speed of the metal layer etched for a plurality of times according to the etching thickness of the metal layer etched for a plurality of times and the corresponding etching time, and averaging to obtain an average etching speed; a second calculation step, according to the formula: the metal complete etching time, which is the thickness of the metal layer/average etching rate, is calculated.
Further, before the database establishing step, the method further comprises: a preparation step, depositing the metal layer, and manufacturing for 3-4 times; a yellow light step, depositing a layer of photoresist and the metal layer, and exposing and developing the metal layer to leave an etching pattern through a yellow light process; etching, namely wet etching is carried out by adopting different etching time; a removing step of removing the remaining photoresist; and a measuring step, using a step difference measuring device to measure the etching thickness of different etching time.
Further, the material of the metal layer includes: copper, aluminum, silver or molybdenum.
Further, the thickness of the metal layer is 850nm to 900 nm.
Further, the etching time includes: 20s, 40s, 60s or 80 s.
Further, in the removing step, the etching pattern is washed away by a stripping liquid.
The invention provides a system for measuring complete etching time of metal, which comprises a database and a data processing system, wherein the database is used for storing the thickness of a metal layer etched for many times and the etching time corresponding to the etching thickness; the data processing system includes: the database establishing unit is used for acquiring the etching thicknesses of the metal layers etched for multiple times and the etching time corresponding to the etching thicknesses and storing the etching thicknesses and the etching time into a database; the acquisition unit is used for acquiring the etching thickness and the corresponding etching time from the database; the first calculation unit is used for calculating the etching speed of the metal layer etched for multiple times according to the etching thickness of the metal layer etched for multiple times and the corresponding etching time, and averaging to obtain the average etching speed; a second calculation unit, according to the formula: the metal complete etching time, which is the thickness of the metal layer/average etching rate, is calculated.
Further, still include: the assembly line control system is used for depositing a metal layer on the substrate, forming an etching pattern through a yellow light process, then etching, and sending etching time to the database establishing unit; and the step difference measuring device is used for measuring the etching thickness and sending the etching thickness to the database establishing unit.
Further, still include: and the communication module is used for sending the measured metal complete etching time value to an upper computer.
The present invention also provides a storage medium having a computer program stored thereon, which when executed by a processor is operable to implement the method as described above.
The invention has the beneficial effects that: the invention provides a method and a system for measuring the complete etching time of metal and a storage medium, wherein wet etching is carried out by adopting different etching time, corresponding etching thickness is recorded, the etching speed of multiple times of etching is calculated, the average etching speed is obtained by averaging, and finally, the complete etching time of metal, namely the thickness/average etching speed of a metal layer, is calculated. And then the complete etching time of metal is calculated more accurately, and human errors are avoided.
Drawings
The invention is further described below with reference to the figures and examples.
Fig. 1 is a flowchart of a method for measuring a metal complete etching time according to the present invention.
Fig. 2 is a schematic structural diagram of a yellow light step according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of the etching step provided by the embodiment of the invention after 40s of etching.
Fig. 4 is a schematic structural diagram of the etching step provided by the embodiment of the invention after etching for 60 s.
Fig. 5 is a schematic structural diagram of an etching step 80s according to an embodiment of the present invention.
FIG. 6 is a functional block diagram of a system for measuring metal etch completion time according to the present invention.
FIG. 7 is a functional block diagram of a data processing system in accordance with the present invention.
Detailed Description
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. Directional phrases used herein, such as, for example, upper, lower, front, rear, left, right, inner, outer, lateral, etc., refer only to the orientation of the accompanying drawings. The names of the elements, such as the first, the second, etc., mentioned in the present invention are only used for distinguishing different elements and can be better expressed. In the drawings, elements having similar structures are denoted by the same reference numerals.
Embodiments of the present invention will be described in detail herein with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. These embodiments are provided to explain the practical application of the invention and to enable others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1, the present invention provides a method for measuring a complete etching time of a metal, comprising the following steps.
Step S1, database establishment step, obtaining the etching thickness of the metal layer etched for many times and the etching time corresponding to the etching thickness, and storing the etching thickness and the etching time into the database.
Step S2, collecting the thickness of the etching and the corresponding etching time from the database.
Step S3, a first calculation step, calculating the etching speed of the metal layer etched for a plurality of times according to the etching thickness of the metal layer etched for a plurality of times and the corresponding etching time, and averaging to obtain an average etching speed.
Step S4, a second calculation step, according to the formula: the metal complete etching time, which is the thickness of the metal layer/average etching rate, is calculated.
Before the database establishing step, the following steps are also included.
S101, a preparation step, namely depositing the metal layer and manufacturing for 3-4 times;
s102, yellow light, namely depositing a layer of photoresist on the metal layer, and exposing and developing the metal layer to leave an etching pattern through a yellow light process.
The material of the metal layer comprises: copper, aluminum, silver or molybdenum. The thickness of the metal layer is 850 nm-900 nm.
S103, etching, namely wet etching is carried out by adopting different etching time; the etching time includes: 20s, 40s, 60s or 80 s.
S104, removing the residual photoresist; in the removing step, the etching pattern is washed away by a stripping liquid.
S105, a step of measuring, using a step difference measuring device, etching at different etching times.
In one embodiment, the etching pattern is formed after S1-S2 by three times of etching, as shown in FIG. 2; the metal layer 12 is arranged on the substrate 11, the photoresist 13 is arranged on the metal layer 12, and the exposed and developed pattern is a gap 14 of the residual photoresist.
As shown in fig. 3, the structure formed by etching 40s, as shown in fig. 4, the structure formed by etching 60s, and as shown in fig. 5, the structure formed by etching 80 s. After the etching pattern is removed, the etching thickness can be measured, and the metal complete etching time can be calculated.
The invention provides a method for measuring the complete etching time of metal, which adopts different etching time to carry out wet etching, records corresponding etching thickness, calculates the etching speed of multiple times of etching, obtains the average etching speed by averaging, and finally calculates the complete etching time of metal, namely the thickness of a metal layer/the average etching speed. And then the complete etching time of metal is calculated more accurately, and human errors are avoided.
As shown in fig. 6, the present invention provides a system for measuring a metal complete etching time, which comprises a database 102, a data processing system 101, a pipeline control system 103, a step difference measuring device 104 and a communication module 105.
The database 102 is used for storing the thicknesses of the metal layers etched multiple times and the etching time corresponding to the etching thickness.
As shown in fig. 7, the data processing system 101 includes: a database building unit 1011, an acquisition unit 1012, a first calculation unit 1013, and a second calculation unit 1014.
The database creating unit 1011 is configured to obtain the etching thicknesses of the metal layers etched multiple times and the etching time corresponding to the etching thicknesses, and store the etching thicknesses and the etching time into a database.
The acquisition unit is used 1012 to acquire the etch thickness and the corresponding etch time from the database.
The first calculating unit 1013 is configured to calculate etching rates of the metal layers etched multiple times according to the etching thicknesses of the metal layers etched multiple times and corresponding etching times, and obtain an average etching rate by averaging the etching rates.
The second calculating unit 1014 is configured to: the metal complete etching time, which is the thickness of the metal layer/average etching rate, is calculated.
The pipeline control system 103 is used for depositing a metal layer on a substrate and forming an etching pattern through a photolithography process, then etching, and sending an etching time to the database building unit.
The step difference measuring device 104 is used for measuring the etching thickness and sending the etching thickness to the database establishing unit.
The communication module 105 is used for sending the measured metal complete etching time value to an upper computer.
The invention provides a system for measuring the complete etching time of metal, wherein a production line control system adopts different etching times to carry out wet etching and records corresponding etching thickness. The data processing system calculates the etching speed of multiple etching, averages the etching speed to obtain the average etching speed, and finally calculates the metal complete etching time which is the thickness of the metal layer/the average etching speed. And then the complete etching time of metal is calculated more accurately, and human errors are avoided.
The invention also relates to a storage medium, which stores a computer program, and when a processor executes the computer program, the method for measuring the metal complete etching time can be realized.
It should be noted that many variations and modifications of the embodiments of the present invention fully described are possible and are not to be considered as limited to the specific examples of the above embodiments. The above examples are intended to be illustrative of the invention and are not intended to be limiting. In conclusion, the scope of the present invention should include those changes or substitutions and modifications which are obvious to those of ordinary skill in the art.
Claims (10)
1. A method for measuring the complete etching time of metal is characterized by comprising the following steps:
a database establishing step, namely acquiring the etching thicknesses of the metal layers etched for multiple times and the etching time corresponding to the etching thicknesses, and storing the etching thicknesses and the etching time into a database;
an acquisition step of acquiring the etching thickness and the corresponding etching time from the database;
a first calculation step of calculating the etching speed of the metal layer etched for a plurality of times according to the etching thickness of the metal layer etched for a plurality of times and the corresponding etching time, and averaging to obtain an average etching speed;
a second calculation step, according to the formula: the metal complete etching time, which is the thickness of the metal layer/average etching rate, is calculated.
2. The method for measuring metal full etch time according to claim 1,
before the database establishing step, the method further comprises the following steps:
a preparation step, depositing the metal layer, and manufacturing for 3-4 times;
a yellow light step, depositing a layer of photoresist on the metal layer, and exposing and developing the metal layer to leave an etching pattern through a yellow light process;
etching, namely wet etching is carried out by adopting different etching time;
a removing step of removing the remaining photoresist;
and a measuring step, using a step difference measuring device to measure the etching thickness of different etching time.
3. The method of claim 1, wherein the material of the metal layer comprises: copper, aluminum, silver or molybdenum.
4. The method for measuring metal complete etching time according to claim 1, wherein the thickness of the metal layer is 850nm to 900 nm.
5. The method of measuring metal full etch time of claim 2, wherein said etch time comprises: 20s, 40s, 60s or 80 s.
6. The method of claim 2, wherein in the removing step, the etching pattern is washed away by a stripping solution.
7. A system for measuring the complete etching time of metal is characterized by comprising a database and
a data processing system for a data processing system,
the database is used for storing the thicknesses of the metal layers etched for multiple times and the etching time corresponding to the etching thickness;
the data processing system includes:
the database establishing unit is used for acquiring the etching thicknesses of the metal layers etched for multiple times and the etching time corresponding to the etching thicknesses and storing the etching thicknesses and the etching time into a database;
the acquisition unit is used for acquiring the etching thickness and the corresponding etching time from the database;
the first calculation unit is used for calculating the etching speed of the metal layer etched for multiple times according to the etching thickness of the metal layer etched for multiple times and the corresponding etching time, and averaging to obtain the average etching speed;
a second calculation unit, according to the formula: the metal complete etching time, which is the thickness of the metal layer/average etching rate, is calculated.
8. The system for measuring metal full etch time of claim 7, further comprising:
the assembly line control system is used for depositing a metal layer on the substrate, forming an etching pattern through a yellow light process, then etching, and sending etching time to the database establishing unit;
and the step difference measuring device is used for measuring the etching thickness and sending the etching thickness to the database establishing unit.
9. The system for measuring metal full etch time of claim 7, further comprising:
and the communication module is used for sending the measured metal complete etching time value to an upper computer.
10. A storage medium having stored thereon a computer program which, when executed by a processor, is operable to carry out the method of claim 1.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911372267.2A CN111128781A (en) | 2019-12-27 | 2019-12-27 | Method and system for measuring complete etching time of metal and storage medium |
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| CN201911372267.2A CN111128781A (en) | 2019-12-27 | 2019-12-27 | Method and system for measuring complete etching time of metal and storage medium |
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| CN111128781A true CN111128781A (en) | 2020-05-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112877696A (en) * | 2021-02-04 | 2021-06-01 | 广州兴森快捷电路科技有限公司 | Method, device and equipment for controlling oxygen content in alkaline etching and storage medium |
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| JPH1180974A (en) * | 1997-09-03 | 1999-03-26 | Matsushita Electron Corp | Method for measuring etching rate |
| JP2003243662A (en) * | 2002-02-14 | 2003-08-29 | Mitsubishi Electric Corp | Semiconductor device and method of manufacturing the same, and semiconductor wafer |
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| TW200733222A (en) * | 2006-02-27 | 2007-09-01 | Advanced Semiconductor Eng | Etching process and method for attaining etching rate of etchant to metal material layer |
| CN106847690A (en) * | 2017-04-01 | 2017-06-13 | 深圳市华星光电技术有限公司 | A kind of engraving method of more metal layers |
| CN110426451A (en) * | 2019-07-15 | 2019-11-08 | 深圳市华星光电技术有限公司 | The method for measurement of etch-rate measuring equipment and lateral etch rate |
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- 2019-12-27 CN CN201911372267.2A patent/CN111128781A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1180974A (en) * | 1997-09-03 | 1999-03-26 | Matsushita Electron Corp | Method for measuring etching rate |
| CN1491434A (en) * | 2001-02-14 | 2004-04-21 | �Ƚ�װ�ù�˾ | Method and apparatus for controlling etch selectivity |
| JP2003243662A (en) * | 2002-02-14 | 2003-08-29 | Mitsubishi Electric Corp | Semiconductor device and method of manufacturing the same, and semiconductor wafer |
| TW200733222A (en) * | 2006-02-27 | 2007-09-01 | Advanced Semiconductor Eng | Etching process and method for attaining etching rate of etchant to metal material layer |
| CN106847690A (en) * | 2017-04-01 | 2017-06-13 | 深圳市华星光电技术有限公司 | A kind of engraving method of more metal layers |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112877696A (en) * | 2021-02-04 | 2021-06-01 | 广州兴森快捷电路科技有限公司 | Method, device and equipment for controlling oxygen content in alkaline etching and storage medium |
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Application publication date: 20200508 |