CN111115590A - 一种二维碲化铟纳米片及其制得的偏振光探测器 - Google Patents
一种二维碲化铟纳米片及其制得的偏振光探测器 Download PDFInfo
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Abstract
本发明属于纳米功能材料技术领域，公开了一种二维碲化铟纳米片及其制得的偏振光探测器，所述碲化铟纳米片是将铟粉和碲粉混合后加热至480～520℃并保温，然后降温至460～480℃并保温，再冷却至室温，在不同温度下反应朝不同方向进行生长制得。该二维碲化铟纳米片具有低面内对称性，由其制得的偏振光探测器依次包括重掺杂硅、二氧化硅绝缘层和二维材料碲化铟纳米片，在所述二维材料碲化铟纳米片的两侧制作金属电极。由于二维材料碲化铟纳米片具有各向异性等特点，使得偏振光探测器可以探测多角度的线偏振光。
Description
技术领域
本发明属于纳米功能材料技术领域，更具体地，涉及一种二维碲化铟纳米片及其制得的偏振光探测器。
背景技术
自从2010年曼彻斯特大学的盖姆和诺沃肖洛夫由于发现了从石墨中通过机械剥离法得到了单层石墨烯而获得诺贝尔奖来，实验发现单层的石墨烯相比于其体材料具有更加优良的力学、热学和电学性能，并且在纳米电子学、能源、功能材料等方面都具有广阔的应用前景。随着多种类石墨烯的二维材料(如:过渡金属硫族化合物，氮化硼等)相继被制备出来。二维材料相比与其母体材料表现出更多新奇的物理化学性质，在未来的电子、信息、能源等领域具有巨大的应用潜力。
光电探测器的原理是利用光照引起具有光电效应的材料及异质结产生额外的光生载流子，进而被人们探测到。将二维材料应用到光探测器中可以提高探测器的光强敏感度，减少探测器的响应时间，拓展探测光范围等。将拥有面内各向异性的二维材料应用到光探测器中，可以制备出角度敏感的偏振光探测器。然而由于材料本身性能的限制，偏振光探测器的种类少，光敏感性较弱，器件响应速度较慢，各向异性不强等缺点。半导体纳米片作为高性能低维功能材料的一种，在电子，光电子和纳电子机械器械中起重要作用，它同时还可以作为合成物中的添加物、量子器械中的连线、场发射器和生物分子纳米感应器。半导体纳米片由于属于较大的表面积/体积比的量子结构，具备特殊的光、电、磁等物理化学性质尤其在光电器件中有着重要的用途。光电探测器在军事和国民经济的各个领域有着广泛的用途，在可见光或近红外波段主要用于射线测量和探测、工业自动控制、光度计量等，在红外波段主要用于导弹制导、红外热成像、红外遥感等方面。偏振光探测器具有可探测偏振光方向等特点有着更丰富的应用，尤其是开发可拓展到宽波段范围的新型偏振光探测器十分有意义。
发明内容
为了解决上述现有技术存在的不足和缺点，本发明目的在于提供了一种二维碲化铟纳米片。
本发明的另一目的在于提供一种上述二维碲化铟纳米片制得的偏振光探测器。
本发明的再一目的在于提供一种上述偏振光探测器的应用。
本发明的目的通过下述技术方案来实现：
一种二维材料碲化铟纳米片，所述碲化铟纳米片是将铟粉和碲粉混合后加热至480～520℃并保温，然后降温至460～480℃并保温，再冷却至室温，在不同温度下反应朝不同方向进行生长制得。
优选地，所述铟粉和碲粉的质摩尔比为1：(2～3)。
优选地，所述保温的时间均为24～48h。
优选地，所述降温至460～480℃的速率为1～2℃/h；所述冷却至室温的速率为5～10℃/h。
优选地，所述生长的时间为10～30天。
一种偏振光探测器，所述偏振光探测器是采用光刻对所述的二维材料碲化铟纳米片的两侧制作电极制得。
进一步地，所述偏振光探测器依次包括重掺杂硅、二氧化硅绝缘层、二维材料碲化铟纳米片和金属电极。
优选地，所述二氧化硅绝缘层的厚度为280～300nm；所述二维材料碲化铟纳米片的厚度为1～30nm。
优选地，所述金属电极为金或铂。
所述的偏振光探测器在可见-红外光探测或成像领域中的应用。
与现有技术相比，本发明具有以下有益效果：
1.本发明的新型二维碲化铟纳米片属于空间群为C2/c的单斜晶系结构，其在室温下极为稳定，单层带隙为1.4eV左右；晶体结晶质量高，光电探测器性能优异，开关比高，响应时间快，可作为偏振光探测器和多功能晶体管等器件的潜在应用材料。
2.本发明将二维碲化铟单晶材料进行机械剥离形成纳米片，其在重掺杂硅、二氧化硅绝缘层的衬底上制作得二维碲化铟光电探测器，该光电探测器可对 266-808nm波长的光进行吸收，并且在此波段具有明显的偏振特性，光沿着不同方向具有明显的光电信号的差异，而且十分稳定。
3.本发明的方法简单，成本低，能够大规模可重复地生产，对环境无污染。
附图说明
图1为实施例1生长的碲化铟晶体的扫描电子显微镜图；
图2为实施例2制得的偏振光探测器的X射线衍射图；
图3为实施例4制得的偏振光探测器的原子力显微镜图；
图4为实施例4使用532nm在激光不同功率下偏振光探测器的光电流开态和关态随时间的变化示意图。
具体实施方式
下面结合具体实施例进一步说明本发明的内容，但不应理解为对本发明的限制。若未特别指明，实施例中所用的技术手段为本领域技术人员所熟知的常规手段。除非特别说明，本发明采用的试剂、方法和设备为本技术领域常规试剂、方法和设备。
实施例1
将摩尔比为1：2.5的铟粉和碲粉混合均匀；通过化学气相输运法将上述混合材料真空封入容器中，将其置于管式炉单温区中，在10h内加热到500℃，并在此温度下保持24h，然后以2℃/h的速率逐渐降至470℃并保持24h，最后以 10℃/h的速率冷却至室温20℃，化学可逆反应在不同温度下反应朝不同方向进行而生长晶体生长30天后，得到层状碲化铟半导体单晶。
图1为实施例1生长的碲化铟晶体的扫描电子显微镜图，从图1中可知，碲化铟纳米片结晶度良好且为层状的二维结构。
实施例2
对实施例1所得的层状碲化铟半导体单晶进行机械剥离，在Si/SiO2(厚度为300nm)基底上制得单层碲化铟纳米片。通过光刻工艺制作包括旋涂，软烘，曝光，显影，蒸镀，去胶等步骤制作两端金属电极，从而组装二维碲化铟偏振光探测器。
图2为实施例1所得碲化铟纳米片制得的偏振光探测器的X射线衍射图，从图2中可知，碲化铟(In2Te5)为无杂质的单晶且其空间群为C2/c。面内通过共价键连接，面间通过范德瓦尔斯力结合。通过配比In和Te单质粉末进行生长以形成空间群为C2/c的斜方晶系结构，通过高温烧结即可直接获得，所获碲化铟纳米片材料制作的偏振光探测器性能优异，开关比高，响应时间快，可以用于高集成度的光探测器中。
实施例3
1.将0.53克铟粉，1.47克碲粉(纯度均为99.99％)进行混合，将混合粉体装入试管中，使用试管搅拌机充分搅拌均匀。
2.备干净烧制好的石英管，使用丙酮和去离子水依次超声清洗30min，置入高温管式炉，设置800℃保温1h以彻底去除石英管中的杂质，将试管中的2g混合材料置入石英管内并接入真空系统，通过机械泵与分子泵将石英管抽真空至 10-4帕后，利用氢氧焰进行真空封口，放置一段时间待其冷却。
3.将封口好的石英管置入高温管式炉装置中进行化学气相输运法生长，将管式炉在10h内加热到500℃，并在此温度下保持24h，然后以2℃/h速率逐渐降至470℃并保持24h，最后将熔炉以10℃/h的速率冷却至室温20℃，降温时间约为2天，化学可逆反应在不同温度下反应朝不同方向进行而生长晶体生长10 天后，以获得高质量的二维碲化铟单晶。
实施例4
将实施例3所得的二维碲化铟单晶放置在剥离胶带上，反复机械剥离直至胶带上的薄片颜色变浅，将胶带粘贴至重掺杂硅、二氧化硅绝缘层(厚度为280nm) 的衬底上，放置一段时间后缓慢撕开胶带，可得到位于硅片上不同厚度和尺寸的二维碲化铟纳米片，通过光刻工艺制作包括旋涂，软烘，曝光，显影，蒸镀，去胶等步骤制作两端金属电极，从而组装二维碲化铟偏振光探测器。
图3为实施例4中的二维碲化铟偏振光探测器的原子力显微镜图，从图3中可知，二维碲化铟纳米片厚度约为12.4nm，证明其可以进一步剥离为二维薄层纳米片。图4为实施例4使用532nm在激光不同功率下铟偏振光探测器的光电流开态和关态随时间的变化示意图。从图4可知，该偏振光探测器可对266-808nm 波长的光进行吸收，并且在此波段具有明显的偏振特性，光沿着不同方向具有明显的光电信号的差异，而且十分稳定。说明偏振光探测器具有良好的开关比和光响应性能。由于二维薄层纳米片结构上的各向异性，其进一步用作探测多角度的线偏振光探测器。
除了上述具体列举的化学气相输运法(化学可逆反应在不同温度下反应朝不同方向进行而生长晶体的方法)生长二维半导体碲化铟纳米片之外，还可以采用常规的化学气相沉积法(利用含有薄膜元素的一种或几种气相化合物或单质、在衬底表面上进行化学反应生成薄膜的方法)来进行单晶生长，同样可以得到同时具备高性能偏振光探测性能的二维碲化铟半导体纳米片材料。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受上述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合和简化，均应为等效的置换方式，都包含在本发明的保护范围之内。
Claims (10)
1.一种二维材料碲化铟纳米片，其特征在于，所述碲化铟纳米片是将铟粉和碲粉混合后加热至480～520℃并保温，然后降温至460～480℃并保温，再冷却至室温，在不同温度下反应朝不同方向进行生长制得。
2.根据权利要求1所述的二维材料碲化铟纳米片，其特征在于，所述铟粉和碲粉的摩尔比为1：(2～3)。
3.根据权利要求1所述的二维材料碲化铟纳米片，其特征在于，所述保温的时间均为24～48h。
4.根据权利要求1所述的二维材料碲化铟纳米片，其特征在于，所述降温至460～480℃的速率为1～2℃/h；所述冷却至室温的速率为5～10℃/h。
5.根据权利要求1所述的二维材料碲化铟纳米片，其特征在于，所述生长的时间为10～30天。
6.一种偏振光探测器，其特征在于，所述偏振光探测器是采用光刻对权利要求1-5任一项所述的二维材料碲化铟纳米片的两侧制作电极制得。
7.根据权利要求6所述的偏振光探测器，其特征在于，所述偏振光探测器依次包括重掺杂硅、二氧化硅绝缘层和二维材料碲化铟纳米片，在所述二维材料碲化铟纳米片的两侧制作金属电极。
8.根据权利要求7所述的偏振光探测器，其特征在于，所述二氧化硅绝缘层的厚度为280～300nm；所述二维材料碲化铟纳米片的厚度为1～30nm。
9.根据权利要求7所述的偏振光探测器，其特征在于，所述金属电极为金或铂。
10.权利要求6-9任一项所述的偏振光探测器在可见-红外光探测或成像领域中的应用。
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