CN111106170A - AlGaN barrier layer in AlGaN/GaN HEMT and growing method thereof - Google Patents
AlGaN barrier layer in AlGaN/GaN HEMT and growing method thereof Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 181
- 230000004888 barrier function Effects 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 19
- 230000000737 periodic effect Effects 0.000 claims description 9
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 7
- 238000005204 segregation Methods 0.000 abstract description 5
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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Abstract
The invention provides an AlGaN barrier layer in an AlGaN/GaN HEMT and a growing method thereof, wherein the AlGaN barrier layer in the AlGaN/GaN HEMT comprises the following components: the silicon-doped AlGaN layer comprises a first undoped AlGaN layer, a second periodically silicon-doped AlGaN layer and a third undoped AlGaN layer; the second AlGaN layer consists of a multicycle undoped AlGaN layer and a silicon doped AlGaN layer. The AlGaN barrier layer can improve the two-dimensional electron gas surface density and effectively avoid SiH4And lattice defects and Al component segregation caused by doping ensure the mobility of two-dimensional electron gas and the reliability of the HEMT device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an AlGaN/GaN HEMT epitaxial structure and a growth method thereof.
Background
In the AlGaN/GaN HEMT structure, the surface density of two-dimensional electron gas is an important factor influencing the device characteristics such as saturation current, transconductance, on-state resistance and the like. Although the surface density of two-dimensional electron gas can be improved by thickening the AlGaN barrier layer and increasing the Al component in the AlGaN barrier layer, when the thickness of the AlGaN barrier layer and the Al component in the AlGaN barrier layer exceed a certain range, the AlGaN barrier layer relaxes, but reduces the gas surface density of two-dimensional electrons, and generates crystal defects at an AlGaN/GaN interface, thereby reducing the mobility of the two-dimensional electron gas and damaging the dynamic characteristics and reliability of an HEMT device.
To solve the above problem, n-type doping (TMAl, TMGa, and SiH) is usually performed on the AlGaN barrier layer4While passing into the reaction chamber) to further increase the two-dimensional electron gas area density. However, in the HEMT epitaxial process, in order to prevent the GaN channel from being damaged, the AlGaN barrier layer cannot be grown at a high temperature, resulting in insufficient surface mobility of Al atoms and Ga atoms. In this case, TMAl, TMGa and SiH are simultaneously added4The surface mobility of Al atoms and Ga atoms can be further reduced by introducing the AlGaN barrier layer into the reaction cavity, and the lattice defects of the AlGaN barrier layer are increased and Al component segregation is caused.
Disclosure of Invention
In order to overcome the defects, the invention provides an AlGaN barrier layer in an AlGaN/GaN HEMT and a growing method thereof, which effectively solve the problem that TMAl, TMGa and SiH are simultaneously used in the prior art4The introduction of the Al and Ga atoms into the reaction cavity reduces the surface mobility of the Al and Ga atoms, increases the lattice defect of the AlGaN barrier layer, causes Al component segregation and the like.
The technical scheme provided by the invention is as follows:
an AlGaN barrier layer in an AlGaN/GaN HEMT, comprising: the silicon-doped AlGaN layer comprises a first undoped AlGaN layer, a second periodically silicon-doped AlGaN layer and a third undoped AlGaN layer; the second AlGaN layer consists of a multicycle undoped AlGaN layer and a silicon doped AlGaN layer.
The invention also provides a growth method of the AlGaN barrier layer in the AlGaN/GaN HEMT, which comprises the following steps:
growing a first undoped AlGaN layer;
growing a second AlGaN layer doped with periodic silicon on the surface of the first AlGaN layer;
and growing a third undoped AlGaN layer on the surface of the second AlGaN layer to form an AlGaN barrier layer.
The invention also provides an AlGaN/GaN HEMT epitaxial structure, which sequentially comprises the following components from bottom to top: growth substrate, dislocation filter layer, stress control layer, GaN thin layer and above-mentioned AlGaN barrier layer.
The invention also provides a growth method of the AlGaN/GaN HEMT epitaxial structure, which is characterized by comprising the following steps:
providing a growth substrate;
sequentially growing a missing filter layer, a stress control layer and a GaN thin layer on the surface of the growing substrate;
according to the method for growing the AlGaN barrier layer in the AlGaN/GaN HEMT, the AlGaN barrier layer is grown on the surface of the GaN thin layer.
In the AlGaN barrier layer and the growing method thereof in the AlGaN/GaN HEMT, the periodic undoped AlGaN layer and the silicon-doped AlGaN layer are grown in the AlGaN barrier layer, namely the undoped AlGaN layer is grown between the periodic silicon-doped AlGaN layers, so that the density of a two-dimensional electron gas surface is improved, and SiH is effectively avoided4And lattice defects and Al component segregation caused by doping ensure the mobility of two-dimensional electron gas and the reliability of the HEMT device.
Drawings
FIG. 1 is a schematic view of an epitaxial structure of an AlGaN/GaN HEMT of the present invention.
Reference numerals:
101-growth substrate, 102-dislocation filter layer/stress control layer, 103-GaN thin layer, 104-first AlGaN layer, 105-second AlGaN layer, 106-third AlGaN layer.
Detailed Description
In order to more clearly illustrate the embodiment of the present invention or the technical solutions in the prior art, the following description will explain embodiments of the present invention with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
Aiming at the problem that when the AlGaN barrier layer is doped in an n-type manner in the prior art, TMAl, TMGa and SiH are simultaneously used4The invention provides a brand new AlGaN barrier layer in an AlGaN/GaN HEMT, which is introduced into a reaction cavity to easily cause the problems of reducing the surface mobility of Al atoms and Ga atoms, increasing the lattice defect of the AlGaN barrier layer, causing Al component segregation and the like, and comprises the following components: a first undoped AlGaN layer, a second periodic silicon-doped AlGaN layer, and a third undoped AlGaN layerA layer; the second AlGaN layer is composed of a multicycle undoped AlGaN layer and a silicon doped AlGaN layer, wherein the thickness of the AlGaN barrier layer is 15-40 nm, the thickness of the first AlGaN layer 104 is 0-10 nm, the thickness of the second AlGaN layer 105 is 10-20 nm, and the thickness of the third AlGaN layer 106 is 0-10 nm. In the second AlGaN layer 105, the repetition period of the undoped AlGaN layer and the silicon-doped AlGaN layer is 1-10; in each period, the thickness of the undoped AlGaN layer is 0-5 nm, and the thickness of the silicon-doped AlGaN layer is 0-5 nm
Based on the structure, the invention also provides an AlGaN/GaN HEMT epitaxial structure, which sequentially comprises the following components from bottom to top: the device comprises a growth substrate, a dislocation filter layer, a stress control layer, a GaN thin layer and an AlGaN barrier layer, wherein the dislocation filter layer is an AlN buffer layer, the stress control layer is an AlGaN buffer layer, and the total thickness of the dislocation filter layer and the stress control layer is 500-2000 nm; the thickness of the GaN thin layer 103 is 500-5000 nm. The AlGaN barrier layer comprises an undoped first AlGaN layer 104, a periodic silicon-doped second AlGaN layer 105 and an undoped third AlGaN layer 106; the second AlGaN layer 105 is composed of a multicycle undoped AlGaN layer and a silicon doped AlGaN layer. The growth substrate 101 may be a silicon substrate, a sapphire substrate, a SiC substrate, or the like, and the AlGaN/GaN HEMT epitaxial structure is grown by a metal organic chemical vapor deposition method.
In the growth process, firstly, a missing filter layer, a stress control layer and a GaN thin layer 103 are sequentially grown on the surface of a growth substrate 101; then, an undoped first AlGaN layer 104, a periodic silicon-doped second AlGaN layer 105, and an undoped third AlGaN layer 106 are sequentially grown on the surface of the GaN thin layer 103, thereby forming an AlGaN barrier layer. In growing the second AlGaN layer 105 includes: introducing TMGa and TMAl into the reaction cavity, growing a non-doped AlGaN layer on the surface of the first AlGaN layer 104, and further introducing SiH into the reaction cavity4Growing a silicon-doped AlGaN layer; and repeatedly growing the undoped AlGaN layer and the silicon-doped AlGaN layer according to the preset cycle number to obtain the second AlGaN layer 105 with the undoped AlGaN layer and the silicon-doped AlGaN layer at intervals.
In one example, the growth substrate is a silicon substrate, and the growth process of the AlGaN/GaN HEMT epitaxial structure is as follows:
1) putting the (111) crystal-oriented silicon substrate into an MOCVD reaction chamber, and carrying out high-temperature baking treatment at the pressure of 70torr and the temperature of 1050 ℃ to remove surface oxides;
2) growing an AlN/AlGaN multilayer buffer layer with the thickness of 1000nm at the temperature of 1000 ℃ under the pressure of 70torr, wherein the thickness of the AlN layer is 300nm, and the thickness of the AlGaN layer is 700 nm;
3) changing the growth condition of GaN with the atmosphere at 200torr pressure and 1050 ℃ to grow a GaN thin layer of 2000 nm;
4) growing a 5nm undoped first AlGaN layer under the AlGaN growth conditions of 70torr pressure and 1030 ℃;
5) further growing a 2nm undoped AlGaN layer; keeping the introduction of TMGa and TMAl sources in the reaction cavity, and simultaneously introducing SiH into the reaction cavity4After a 2nm silicon-doped AlGaN layer (N property) is grown, SiH is stopped to be introduced4. Repeatedly growing the non-doped AlGaN layer and the silicon-doped AlGaN layer with the periodic structure for 5 times to obtain a second AlGaN layer with the thickness of 20 nm;
6) and keeping the growth condition of the second AlGaN layer to continue to grow a 5nm undoped third AlGaN layer, thereby finishing the growth of the AlGaN/GaN HEMT epitaxial structure.
In one example, the growth substrate is a sapphire substrate, and the growth process of the AlGaN/GaN HEMT epitaxial structure is as follows:
1) putting the sapphire PSS substrate into an MOCVD reaction chamber, and carrying out high-temperature baking treatment at the pressure of 200torr and the temperature of 1050 ℃ to remove surface oxides;
2) growing a GaN buffer layer or an AlGaN buffer layer with the thickness of 50nm at the pressure of 500torr and the temperature of 550 ℃;
3) growing an island-shaped 3D GaN thin layer of 500nm under the 3D GaN condition of 500torr pressure and 1000 ℃;
4) growing a 2000nm undoped UGaN layer under the UGaN growth condition of 150torr pressure and 1070 ℃ temperature;
5) growing a 5nm undoped first AlGaN layer under the AlGaN growth conditions of 70torr pressure and 1030 ℃;
6) further growing a 2nm undoped AlGaN layer; keeping the TMGa and TMAl sources in the reaction cavity,simultaneously introducing SiH into the reaction cavity4After a 2nm silicon-doped AlGaN layer (N property) is grown, SiH is stopped to be introduced4. Repeatedly growing the non-doped AlGaN layer and the silicon-doped AlGaN layer with the periodic structure for 5 times to obtain a second AlGaN layer with the thickness of 20 nm;
7) and keeping the growth condition of the second AlGaN layer to continue to grow a 5nm undoped third AlGaN layer, thereby finishing the growth of the AlGaN/GaN HEMT epitaxial structure.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (9)
1. An AlGaN barrier layer in an AlGaN/GaN HEMT, comprising: the silicon-doped AlGaN layer comprises a first undoped AlGaN layer, a second periodically silicon-doped AlGaN layer and a third undoped AlGaN layer; the second AlGaN layer consists of a multicycle undoped AlGaN layer and a silicon doped AlGaN layer.
2. The AlGaN barrier layer of claim 1 wherein said AlGaN barrier layer has a thickness of 15 to 40nm, wherein the first AlGaN layer has a thickness of 0to 10nm, the second AlGaN layer has a thickness of 10 to 20nm, and the third AlGaN layer has a thickness of 0to 10 nm.
3. The AlGaN barrier layer according to claim 1 or 2, wherein a repetition period of an undoped AlGaN layer and a silicon-doped AlGaN layer in the second AlGaN layer is 1 to 10; in each period, the thickness of the undoped AlGaN layer is 0-5 nm, and the thickness of the silicon-doped AlGaN layer is 0-5 nm.
4. A growth method of an AlGaN barrier layer in an AlGaN/GaN HEMT is characterized by comprising the following steps:
growing a first undoped AlGaN layer;
growing a second AlGaN layer doped with periodic silicon on the surface of the first AlGaN layer;
and growing a third undoped AlGaN layer on the surface of the second AlGaN layer to form an AlGaN barrier layer.
5. The growth method according to claim 4, wherein in growing the second AlGaN layer comprises:
introducing TMGa and TMAl into the reaction cavity, and growing a non-doped AlGaN layer on the surface of the first AlGaN layer;
further introducing SiH into the reaction cavity4Growing a silicon-doped AlGaN layer;
and repeatedly growing the non-doped AlGaN layer and the silicon-doped AlGaN layer according to the preset cycle number to finish the growth of the second AlGaN layer.
6. The growth method according to claim 4, wherein the AlGaN barrier layer has a thickness of 15 to 40nm, and wherein the first AlGaN layer has a thickness of 0to 10nm, the second AlGaN layer has a thickness of 10 to 20nm, and the third AlGaN layer has a thickness of 0to 10 nm.
7. The growth method according to claim 5 or 6, wherein in the second AlGaN layer, a repetition period of an undoped AlGaN layer and a silicon-doped AlGaN layer is 1 to 10; in each period, the thickness of the undoped AlGaN layer is 0-5 nm, and the thickness of the silicon-doped AlGaN layer is 0-5 nm.
8. The utility model provides an AlGaN/GaN HEMT epitaxial structure which from the bottom up includes in proper order: a growth substrate, a dislocation filter layer, a stress control layer, a GaN thin layer, and an AlGaN barrier layer as claimed in any one of claims 1 to 3.
9. A growth method of an AlGaN/GaN HEMT epitaxial structure is characterized by comprising the following steps:
providing a growth substrate;
sequentially growing a missing filter layer, a stress control layer and a GaN thin layer on the surface of the growing substrate;
the growing method of any one of claims 4 to 7, growing an AlGaN barrier layer on the surface of the GaN thin layer.
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| US20020185655A1 (en) * | 2000-07-18 | 2002-12-12 | Fahimulla Ayub M. | Ultra-linear multi-channel field effect transistor |
| JP2007048933A (en) * | 2005-08-10 | 2007-02-22 | Nippon Telegr & Teleph Corp <Ntt> | Epitaxial wafer for hetero-structured field effect transistor, hetero-structured field effect transistor, and method of manufacturing same |
| CN109950150A (en) * | 2019-03-07 | 2019-06-28 | 苏州汉骅半导体有限公司 | Semiconductor structure and its manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20020185655A1 (en) * | 2000-07-18 | 2002-12-12 | Fahimulla Ayub M. | Ultra-linear multi-channel field effect transistor |
| JP2007048933A (en) * | 2005-08-10 | 2007-02-22 | Nippon Telegr & Teleph Corp <Ntt> | Epitaxial wafer for hetero-structured field effect transistor, hetero-structured field effect transistor, and method of manufacturing same |
| CN109950150A (en) * | 2019-03-07 | 2019-06-28 | 苏州汉骅半导体有限公司 | Semiconductor structure and its manufacturing method |
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