CN111105990B - Thin film structure suitable for copper metallized semiconductor device and preparation method thereof - Google Patents
Thin film structure suitable for copper metallized semiconductor device and preparation method thereof Download PDFInfo
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- CN111105990B CN111105990B CN201811271305.0A CN201811271305A CN111105990B CN 111105990 B CN111105990 B CN 111105990B CN 201811271305 A CN201811271305 A CN 201811271305A CN 111105990 B CN111105990 B CN 111105990B
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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Abstract
The invention discloses a thin film structure suitable for a copper metallized semiconductor device, which comprises a copper metal layer, a barrier layer and an adhesion layer, wherein the copper metal layer, the barrier layer and the adhesion layer are sequentially arranged between an upper metal layer and a substrate, the barrier layer is used for preventing copper from diffusing to the substrate, and the adhesion layer is used for adhering the barrier layer on the substrate. The invention also discloses a preparation method of the film structure suitable for the copper metallization semiconductor device. The film structure of the invention can improve the adhesion between copper and the barrier layer and between the barrier layer and the substrate, and prevent the metal layer on the surface of the device from falling off.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a thin film structure suitable for a copper metallization semiconductor device and a preparation method thereof.
Background
Copper-metallized semiconductor devices are currently widely used for their superior performance, but there are also problems in that copper diffuses rapidly in semiconductor devices such as silicon and silicon oxides, copper ions become deep level acceptor impurities once they enter the silicon device, degrading device performance and even failing, and therefore, it is often necessary to add a barrier layer between copper and silicon. In order to solve the above problems, in the prior art, a single-layer or multi-layer thin film structure of titanium, titanium nitride, tantalum nitride, etc. is applied to the integrated circuit damascene process, and is mainly used for blocking copper ion diffusion and improving contact resistance. There are also few patents that mention the use of metals such as gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, etc. as conductive layers for semiconductor device packages, primarily for improving contact resistance and corrosion resistance. In addition, some patents describe methods of hole filling using metals such as copper, tungsten, and hot aluminum.
However, in the process of using the metal layer structure as the barrier layer to block copper ions from diffusing and improve the resistance, there are still many problems, such as large leakage current of the device and poor adhesion of the metal layer, which seriously affect the reliability and service life of the device, and even cause the complete failure of the device.
Therefore, there is a need to design a new thin film structure suitable for copper metallized semiconductor devices that will not only block the diffusion of copper ions in the semiconductor device, but also improve the adhesion between copper and the barrier layer and between the barrier layer and silicon.
Disclosure of Invention
In order to solve the technical problems, the invention discloses a thin film structure suitable for a copper metallized semiconductor device and a preparation method thereof, wherein the thin film structure can improve the adhesiveness between copper and a barrier layer and between the barrier layer and a substrate and prevent a metal layer on the surface of the device from falling off.
A first aspect of the present invention provides a thin film structure suitable for use in a copper-metallized semiconductor device, comprising a copper metal layer, a barrier layer for preventing copper diffusion to a substrate, and an adhesion layer for adhering the barrier layer to the substrate, disposed in sequence between an upper metal layer and the substrate. And an adhesive layer is arranged between the barrier layer and the substrate, so that the adhesiveness between the barrier layer and the substrate is improved, the reliability of the device is improved, and the service life of the device is prolonged.
In one embodiment, the adhesion layer is a single layer of aluminum, tungsten, titanium, aluminum-silicon alloy, titanium-tungsten alloy, or titanium silicide, or a composite of any two or more of aluminum, tungsten, titanium, aluminum-silicon alloy, and titanium-tungsten alloy. For the design of the adhesion layer, the adhesion between the barrier layer and the substrate material is increased, ohmic contact can be formed between the barrier layer and the underlying material, the contact resistance is reduced, and in addition, the adhesion layer has a certain barrier effect on the diffusion of copper in the copper metal layer to the substrate material.
In one embodiment, the adhesion layer is a single layer of aluminum, tungsten, titanium, aluminum-silicon alloy, or titanium-tungsten alloy, and the thickness of the aluminum, tungsten, titanium, aluminum-silicon alloy, or titanium-tungsten alloy layer is 0.001-5 μm.
In one embodiment, the adhesion layer is a titanium silicide layer having a thickness of 0.001-2 μm.
In one embodiment, the barrier layer is a monolayer of Ti, tiN, ta, taN, co or Ni, or a composite of two or more of Ti, tiN, ta, taN, co and Ni.
In one embodiment, the barrier layer has a thickness of 0.001 to 5 μm.
In one embodiment, the copper metal layer has a thickness of 0.1 to 100 μm.
In one embodiment, the upper metal layer is a single layer metal structure of nickel, palladium, gold, silver, tin, or lead, or a composite layer metal structure of two or more layers of nickel, palladium, gold, silver, tin, and lead.
In another aspect of the present invention, there is provided a method for preparing a thin film structure suitable for use in a copper-metallized semiconductor device, comprising the steps of:
sequentially growing an adhesion layer and a barrier layer on a substrate by physical vapor deposition, chemical vapor deposition, atomic layer deposition or chemical plating;
step two, forming a pattern on the barrier layer through a photoetching process;
sequentially forming a copper metal layer and an upper metal layer on the barrier layer in the formed pattern by physical vapor deposition, chemical vapor deposition, atomic layer deposition, electroplating or chemical plating;
step four, photoresist is removed in a dry photoresist removing or wet photoresist removing mode;
and fifthly, removing redundant parts of the barrier layer and the adhesion layer in a dry etching or wet etching mode.
The film structure of the invention can not only promote the adhesiveness between the barrier layer and the substrate material, but also effectively block the diffusion of copper in the substrate material, optimize the performance of the device, improve the reliability of the device, and enable the device to normally operate in severe environments such as high temperature, high pressure, high vibration and the like. Meanwhile, the film structure is suitable for all semiconductor devices containing copper metal and has wide application range.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings. Wherein:
FIG. 1 is a schematic diagram of a thin film structure suitable for use in a copper-metallized semiconductor device in accordance with an embodiment of the present invention;
fig. 2 is a process flow diagram of a method of fabricating a thin film structure suitable for use in a copper-metallized semiconductor device in accordance with an embodiment of the present invention.
In the drawings, like parts are designated with like reference numerals. The figures are not to scale.
Detailed Description
The invention will be further described with reference to the accompanying drawings.
In the present invention, wherein μm is the length unit of micrometers.
As shown in fig. 1, which is an embodiment of the present invention, a thin film structure for use in a copper-metallized semiconductor device is shown, the thin film structure being disposed between an upper metal layer 1 and a substrate 5, and comprising, in order, a copper metal layer 2, a barrier layer 3, and an adhesion layer 4, wherein the barrier layer 3 functions to prevent copper of the copper metal layer 2 from diffusing into the substrate 5, and the adhesion layer 4 functions to adhere the barrier layer 3 to the substrate 5. Preferably, the adhesion layer 4 may be a single aluminum layer, a tungsten layer, a titanium layer, an aluminum-silicon alloy layer, a titanium-tungsten alloy layer or a single titanium silicide layer, or may be a composite layer of any two or more of an aluminum layer, a tungsten layer, a titanium layer, an aluminum-silicon alloy layer and a titanium-tungsten alloy layer. The adhesion layer 4 mainly serves to increase the adhesion between the barrier layer and the substrate material, and at the same time, can form ohmic contact between the barrier layer and the substrate material, reduce contact resistance, and has a certain barrier effect on the diffusion of copper of the copper metal layer into the substrate material.
In some embodiments, where the adhesion layer 4 is an aluminum layer, a tungsten layer, a titanium layer, an aluminum silicon alloy layer, or a titanium tungsten alloy layer, the adhesion layer 4 preferably has a thickness in the range of 0.001 to 5 μm, and in a preferred embodiment, the adhesion layer 4 has a thickness of 3 μm; in other embodiments, the adhesion layer 4 is a titanium silicide layer, preferably having a thickness in the range of 0.001 to 2 μm, and in a preferred embodiment, a thickness of 0.05 μm.
Further, in this embodiment, the barrier layer 3 may be a single layer of Ti (titanium), tiN (titanium nitride), ta (tantalum), taN (tantalum nitride), co (cobalt) or Ni (nickel), and in some embodiments may be a composite layer of two or more layers of Ti (titanium), tiN (titanium nitride), ta (tantalum), taN (tantalum nitride), co (cobalt) or Ni (nickel). The barrier layer functions to block the diffusion of copper into the substrate material. In some embodiments, the preferred thickness range of the barrier layer is 0.001 to 5 μm; further, in a preferred embodiment wherein the barrier layer has a thickness of 0.05 μm.
Furthermore, in some embodiments, the copper metal layer 2 therein has a thickness of 0.1 to 100 μm; the copper metal layer of such thickness becomes the primary conductive layer of the semiconductor device and is also the buffer layer for package bonding. More preferably, the copper metal layer has a thickness of 60 μm.
Further, the upper metal layer 1 is a single layer of nickel, palladium, gold, silver, tin or lead, or a composite layer metal structure of two or more layers of nickel, palladium, gold, silver, tin and lead. The main function of the upper metal layer 1 is to protect the device.
In one embodiment, the barrier layer 3, the copper metal layer 2 and the upper metal layer 1 therein may be formed by physical vapor deposition, chemical vapor deposition, atomic layer deposition, electroplating, electroless plating, or the like.
As shown in fig. 2, which is a schematic process flow diagram of a method for preparing a thin film structure suitable for use in a copper-metallized semiconductor device, the method for preparing in the present application is schematically shown in fig. 2 and comprises the steps of:
step one: sequentially growing an adhesion layer 4 and a barrier layer 3 on a substrate 5 by physical vapor deposition, chemical vapor deposition, atomic layer deposition or chemical plating;
step two: forming a pattern on the barrier layer 3 by a photolithography process;
step three: in the formed pattern, a copper metal layer 2 and an upper metal layer 1 are sequentially formed on the barrier layer 3 by means of physical vapor deposition, chemical vapor deposition, atomic layer deposition, electroplating or electroless plating;
step four: removing the photoresist 6 by a dry photoresist removing method or a wet photoresist removing method;
step five: and removing redundant parts of the barrier layer and the adhesion layer by dry etching or wet etching.
The film structure of the invention has the following advantages: firstly, the film structure has simple structure and smaller stress, can form better ohmic contact with the substrate material, and reduces the power loss of the device; furthermore, the adhesion layer is matched with the barrier layer to effectively prevent copper atoms from diffusing to the substrate material; the upper metal layer and the lower substrate can be effectively adhered, and the metal layer on the surface of the device is prevented from falling off.
While the invention has been described with reference to a preferred embodiment, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In particular, the technical features mentioned in the respective embodiments may be combined in any manner as long as there is no structural conflict. The present invention is not limited to the specific embodiments disclosed herein, but encompasses all technical solutions falling within the scope of the claims.
Claims (6)
1. A thin film structure suitable for copper metallization semiconductor device is characterized by comprising a copper metal layer, a barrier layer and an adhesion layer which are sequentially arranged between an upper metal layer and a substrate,
the barrier layer is used to prevent copper diffusion to the substrate,
the adhesion layer is used for adhering the barrier layer on the substrate;
the barrier layer is a single layer of Ti, tiN, ta, taN, co or Ni, or a composite layer of two or more layers of Ti, tiN, ta, taN, co and Ni;
the adhesion layer has a certain blocking effect on the diffusion of copper of the copper metal layer to a substrate material;
the adhesion layer is a single-layer aluminum layer, tungsten layer, titanium layer, aluminum-silicon alloy layer, titanium-tungsten alloy layer or titanium silicide layer, or a composite layer of any two or more layers of the aluminum layer, tungsten layer, titanium layer, aluminum-silicon alloy layer and titanium-tungsten alloy layer;
the upper metal layer is of a single-layer metal structure of nickel, palladium, gold, silver, tin or lead, or of a composite layer metal structure of two or more layers of nickel, palladium, gold, silver, tin and lead; the upper metal layer mainly plays a role in protecting the device;
the barrier layer, the copper metal layer, and the upper metal layer may be formed by physical vapor deposition, chemical vapor deposition, atomic layer deposition, electroplating, or electroless plating.
2. The thin film structure of claim 1, wherein the adhesion layer is a single layer of aluminum, tungsten, titanium, aluminum-silicon alloy, or titanium-tungsten alloy, and the thickness of the aluminum, tungsten, titanium, aluminum-silicon alloy, or titanium-tungsten alloy is 0.001-5 μm.
3. The thin film structure of claim 1, wherein the adhesion layer is a titanium silicide layer having a thickness of 0.001-2 μm.
4. The film structure of claim 1, wherein the barrier layer has a thickness of 0.001 to 5 μm.
5. The thin film structure of claim 1, wherein the copper metal layer has a thickness of 0.1 to 100 μm.
6. A method of fabricating a thin film structure suitable for use in a copper-metallized semiconductor device, comprising the steps of:
step one: sequentially growing an adhesion layer and a barrier layer on a substrate by physical vapor deposition, chemical vapor deposition, atomic layer deposition or chemical plating;
step two: forming a pattern on the barrier layer through a photolithography process;
step three: in the formed graph, a copper metal layer and an upper metal layer are sequentially formed on the barrier layer in a physical vapor deposition, chemical vapor deposition, atomic layer deposition, electroplating or chemical plating mode;
step four: removing the photoresist by a dry photoresist removing method or a wet photoresist removing method;
step five: and removing redundant parts of the barrier layer and the adhesion layer by dry etching or wet etching.
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