CN111088479B - E-shaped multi-electron beam evaporation device and electron gun circuit - Google Patents

E-shaped multi-electron beam evaporation device and electron gun circuit Download PDF

Info

Publication number
CN111088479B
CN111088479B CN201911379047.2A CN201911379047A CN111088479B CN 111088479 B CN111088479 B CN 111088479B CN 201911379047 A CN201911379047 A CN 201911379047A CN 111088479 B CN111088479 B CN 111088479B
Authority
CN
China
Prior art keywords
electron beam
electron
voltage
circuit
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201911379047.2A
Other languages
Chinese (zh)
Other versions
CN111088479A (en
Inventor
鲁朝宇
邓荣斌
马兴民
张丽娟
段尧
方江璨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yunnan North Olightek Opto Electronic Technology Co ltd
Original Assignee
Yunnan North Olightek Opto Electronic Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yunnan North Olightek Opto Electronic Technology Co ltd filed Critical Yunnan North Olightek Opto Electronic Technology Co ltd
Priority to CN201911379047.2A priority Critical patent/CN111088479B/en
Publication of CN111088479A publication Critical patent/CN111088479A/en
Application granted granted Critical
Publication of CN111088479B publication Critical patent/CN111088479B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/024—Electron guns using thermionic emission of cathode heated by electron or ion bombardment or by irradiation by other energetic beams, e.g. by laser

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention provides an e-shaped multi-electron beam evaporation device, which comprises a permanent magnet N pole, an S pole, an X/Y scanning coil, a crucible, cooling water and an electron beam emitter, wherein the permanent magnet N pole is connected with the S pole; the electron beam path is made to be e-shaped by adopting a magnetic deflection type electron beam, the deflection angle is 270 degrees, and the electron beam emitter is composed of a filament cathode, an anode, a deflection coil and other components. The problem of electron gun failure is dealt with from both the multi-electron beam and the rotating crucible. The e-shaped multi-electron beam evaporation design greatly improves the evaporation efficiency and the melting point, and in addition, in order to improve the film deposition rate precision and stability in the evaporation process, the invention designs a new electron gun circuit from three aspects of a thermal electron emission module, a high-voltage electron acceleration module and an electron beam deflection module.

Description

E-shaped multi-electron beam evaporation device and electron gun circuit
Technical Field
The invention relates to an electron beam evaporation device, in particular to an e-shaped multi-electron beam evaporation device.
Background
Regarding the electron beam evaporation apparatus, the most central component is an electron gun, which can be classified into a straight gun, a ring gun, and an e-gun according to the focusing manner of the electron beam. The straight gun is used as an axisymmetric straight accelerating gun, electrons emitted by a heating filament are focused under a magnetic field to form an electron beam after being accelerated by an anode, and then bombard materials in a crucible, so that the materials are melted and evaporated, and are commonly used for vacuum evaporation and vacuum metallurgy. Annular rifle with annular cathode emission electron beam, through negative pole coil deflection and focus back action material in the crucible, annular rifle convenient to use, simple structure, but annular rifle positive pole is close with the negative pole distance, can cause evaporation material to pollute filament, power big and efficiency not high equally, the fixed position easily causes "digging hole" phenomenon after the electron beam focus, causes the material can not evenly be consumed and is punctureed by the electron beam easily. The e-shaped gun overcomes the defects of a straight gun and an annular gun, and the filament of the e-shaped gun is designed in the structural body, so that the filament is prevented from being polluted by evaporation materials, and the e-shaped gun also has the characteristic of high power.
In recent years, electron beam evaporation is used as a very important coating device in industrial production, and in particular, compared with general resistance heating evaporation, e-shaped electron beams are more suitable for evaporation of high-purity materials, have the advantages of high evaporation speed, good adhesion of a film to a substrate and the like, so that the e-shaped electron beam coating can obtain a dense and uniform film with high purity, and is widely applied to the field of manufacturing of optical devices. Although e-beam evaporation has many advantages, e-beam evaporation is difficult to satisfy the evaporation of materials with higher melting points in industrial production, and once an e-beam gun is damaged, the industrial production efficiency is seriously influenced in electron beam evaporation.
Disclosure of Invention
The invention aims to provide an e-shaped electron gun device for generating multi-electron beam evaporation and a circuit design, and solves the technical problems that the e-shaped electron gun cannot meet the evaporation of a material with a higher melting point and a single electron gun is damaged to influence the production.
The e-shaped multi-electron beam evaporation device is characterized by comprising e-shaped electron guns and a water-cooled crucible, wherein the e-shaped electron guns are arranged at the periphery and are composed of a cathode linear type annular tungsten filament, an anode and a focusing electrode, the cathode is in a negative potential, and the anode is grounded in a positive potential; the water-cooled crucible is composed of a small crucible at the periphery of a large crucible at the center, and the small crucible at the periphery is driven to rotate by a motor.
The invention relates to a circuit of an e-shaped electron gun of an e-shaped multi-electron beam evaporation device, which is characterized by consisting of a circuit of a cathode filament electron emission module, a direct current circuit of a high-voltage electron acceleration module and a scanning coil direct current excitation circuit of an electron beam deflection module;
the circuit of the cathode filament electron emission module adopts an alternating current 220V power supply, and the alternating current is input into a step-down transformer after voltage regulation, and the maximum secondary output of the step-down transformer is 20V or 60V and is used for heating a cathode linear type annular tungsten filament;
the high-voltage electronic acceleration module adopts 380V alternating current for power supply, outputs direct-current high voltage after three-phase voltage regulation and boosting and three-phase rectification, adopts relay overcurrent protection for the high-voltage electronic acceleration direct-current power supply, and cuts off the voltage input by the high-voltage power supply when the current exceeds a rated value;
the electron beam deflection module direct current excitation circuit supplies excitation coils through voltage regulation, voltage reduction and transformation, bridge rectification and a voltage-stabilized power supply; in order to ensure the safety of equipment and the stability of the process, the direct-current excitation circuit adopts overvoltage protection and voltage stabilization protection, and the overvoltage protection mainly protects the safety of the circuit in a mode of a silicon controlled short-circuit power supply. When the voltage stabilizing circuit outputs voltage exceeding the expected voltage, the voltage stabilizing diode is conducted in a reverse breakdown mode, the control electrode of the one-way controllable silicon is conducted by obtaining trigger current, and the fuse is forced to fuse and protect a post-stage circuit. The permanent magnetic body has substantially the same permeability change characteristic with respect to a temperature change.
The e-shaped electron gun as electron beam generator consists of cathode, anode and focusing electrode of linear annular tungsten filament, and the cathode is in negative potential and the anode is grounded in positive potential. Tungsten heated by alternating current is used as a thermal electron emission source, emitted electrons are firstly accelerated under anode voltage, then form an electron beam under the action of a focusing electrode, and finally deflect by 270 degrees under the action of a static magnetic field, so that the electron beam is focused in an evaporation source crucible. The electrons moving at high speed convert kinetic energy into internal energy to heat the material in the crucible, and the material in the crucible is evaporated to a top substrate in a high-vacuum cavity to form a film.
The e-shaped multi-electron beam evaporation water-cooled crucible adopts a mode that a small crucible is arranged at the periphery of a large crucible at the center, and the small crucible at the periphery is driven by a motor to rotate. On the one hand, the evaporation plating of high-melting-point materials is carried out on a central large-scale crucible by a plurality of electron beams emitted by the e-shaped electron gun, the peripheral crucibles can be respectively evaporated or rotationally evaporated, wherein the respective evaporation plating can realize the mixed evaporation of the materials, and the rotary evaporation plating avoids the phenomenon that a corresponding crucible is idle when one electron gun is damaged. On the other hand, the time for evaporating the evaporation material to rise and condense and forming a layer of compact film on the bottom of the substrate is shortened under the evaporation of the multi-electron beam, and the evaporation efficiency is improved. The invention ensures normal evaporation in industrial production from two aspects of multi-electron beam evaporation and rotating crucible.
Aiming at the phenomenon that the electron gun system is burnt out due to electric arc short circuit because of avalanche effect formed by the increase of current carrier and the great reduction of interelectrode resistance once gas molecules are ionized in the presence of residual gas in the cavity. In order to solve the technical problems, the invention designs a new electron gun circuit from three aspects of a thermionic emission module, a high-voltage electron acceleration module and an electron beam deflection module.
The thermionic emission module adopts an alternating current 220V power supply, and inputs the power supply into a step-down transformer after voltage regulation, and the maximum secondary output of the step-down transformer is 20V or 60V and is used for heating a cathode linear type annular tungsten filament. The high-voltage electronic acceleration module adopts 380V AC power supply, outputs DC high voltage after three-phase voltage regulation and boosting and three-phase rectification, and adopts relay overcurrent protection for the high-voltage electronic acceleration DC power supply, and when the current exceeds a rated value, the relay acts to cut off the voltage input by the high-voltage power supply. The electron beam deflection module direct current excitation circuit supplies excitation coils through voltage regulation, voltage reduction and transformation, bridge rectification and a voltage-stabilized power supply. In order to ensure the safety of equipment and the stability of the process, the direct-current excitation circuit adopts overvoltage protection and voltage stabilization protection, and the overvoltage protection mainly protects the safety of the circuit in a mode of a silicon controlled short-circuit power supply. When the voltage stabilizing circuit outputs voltage exceeding the expected voltage, the voltage stabilizing diode is conducted in a reverse breakdown mode, the control electrode of the one-way controllable silicon is conducted by obtaining trigger current, and the fuse is forced to fuse and protect a post-stage circuit.
109w/cm can be obtained by the existing e-shaped electron beam evaporation2The heating temperature can reach 3000-6000 ℃, the material in the water-cooled crucible is heated by utilizing the kinetic energy of multiple beams of electrons in the e-shaped multi-electron beam evaporation, and compared with the traditional electron beam evaporation, the e-shaped multi-electron beam evaporation can improve the heating temperature by 2-3 times, so that the device is suitable for evaporation of high-melting-point materials.
Drawings
FIG. 1 is a schematic view of an e-beam electron beam evaporation apparatus. 1 is S pole, 2 is X/Y scanning coil, 3 is N pole, 4 is electron beam, 5 is crucible water cooling, 6 is crucible, 7 is electron beam emission;
fig. 2 is a schematic view of the operating principle of the electron beam emitter device. 8 is anode, 2 is X/Y scanning coil; 4 is an electron beam; 11 is one of the electrons; 12 is a central large crucible; 13 is circulating cooling water; 14 is a high voltage power supply; 15 is a cathode linear type annular tungsten filament;
FIG. 3 is a circuit layout of an e-gun. 101-103 are circuits of the cathode filament electron emission module, 201-204 are direct current circuits of the high-voltage electron acceleration module, 301-310 are scanning coil direct current excitation circuits of the electron beam deflection module;
101 in the figure is a 220V alternating current power supply; 102 is a crucible; 103 is a cathode filament; 201 is a 380V three-phase ac power supply; 202 is a diode; 203 is a resistance; 204 is a relay; 301 is 220V ac; 302 is a step-down transformer; 303 is a rectifier diode; 304 is a capacitance; 305 is a fuse; 306 is a thyristor control electrode; 307 is a light emitting diode; 308 is a three terminal regulator; 309 is a current-expanding triode; 310 are zener diodes.
Detailed Description
Example 1, as shown in figures 1, 2, 3:
step 1, vacuumizing: the e-shaped multi-electron beam evaporation device must operate in a high vacuum state to reduce the existence of residual gas in a vacuum cavity, and because the gas molecules are dissociated in an electric field of an electron gun and form a negative charge carrier flow and a positive charge carrier flow consisting of electrons in a local area to cause an arc discharge phenomenon, a vacuum pumping system must pump the cavity to a vacuum range required by a thin film process.
Two or more of a Roots pump, a molecular pump and the like are connected in series to pump the cavity e-shaped electron gun system to low vacuum, and then the cavity e-shaped electron gun system can be pumped to high vacuum by adopting a low-temperature pump, an ion pump and the like.
Step 2, checking: before an e-shaped multi-electron beam device opens an electron gun, firstly, whether circulating cooling water 13 is normal or not is checked to prevent high temperature from damaging a peripheral small crucible 6 and a central large crucible 12, secondly, whether vacuum reaches the standard or not is checked, the vacuum is determined by the process requirements required by a film material, and finally, whether the heating temperature of the electron gun for the film coating material is matched or not is checked, wherein the heating temperature is the optimal heating temperature selected according to the evaporation temperature of different film materials under high vacuum. For example, Al having a melting point of 660 ℃ and an evaporation temperature of 1272 ℃ under a vapor pressure of 1Pa, and in the range of 1E to 10-3The evaporation temperature under the Pa vapor pressure is only 847 ℃; ag, one of the common coating materials, has a melting point of 961 deg.C, an evaporation temperature of 1027 deg.C under 1Pa vapor pressure, and a melting point of 1E-10 deg.C-3The evaporation temperature under Pa vapor pressure was only 884 ℃.
Step 3, after the electron gun is turned on, the alternating current heats the linear annular tungsten filament 15 of the cathode to emit thermal electrons, in this embodiment, the heating power can be determined by the diameter and length of the filament, and the filament is replaced according to the power required by the film material. The thermal electrons are accelerated by an accelerating voltage between a cathode linear type annular tungsten wire 15 and an anode 8, then form an electron beam 4 under the action of a focusing electrode, and finally deflect 270 degrees under the action of magnetic fields of an S pole 1 and an N pole 3, so that the electron beam is focused in the small crucible 6 of the evaporation source. The electron emission module adopts a 220V alternating current power supply 101, and the voltage is regulated and then input into a step-down transformer, and the maximum secondary output of the step-down transformer is 20V or 60V and is used for heating the cathode filament. The high-voltage electronic acceleration module is powered by a three-phase alternating current 380V power supply 201, outputs direct current high voltage after three-phase voltage regulation and boosting and three-phase rectification, the maximum value of direct current output power is 10KW when rated voltage is input, and when current exceeds the rated value, the relay 204 acts to cut off the voltage input by the high-voltage power supply. The direct current excitation of the electron beam deflection module adopts a 220V power supply 301 for voltage regulation, voltage reduction and transformation 302, bridge rectification and a three-stage voltage stabilizer 308 for supplying power to an excitation coil, and the maximum direct current output power value is 20 KW.
In the process of e-shaped multi-electron beam evaporation, the electron beams move left and right on the X axis and move up and down on the Y axis by adjusting the current of the X-axis and Y-axis scanning coils 2, and the electron beams can automatically scan materials of the evaporation source with different amplitudes (circles or other shapes) and frequencies by applying variable current to the X, Y axis. The electron beam deflection magnet exciting coil is provided with a voltage-stabilized power supply with overvoltage protection, wherein a voltage-stabilizing part is formed by adding a current-amplifying triode 309 to an LM7805 three-terminal voltage stabilizer 308, and the voltage drop of the adjusting terminal is raised by serially connecting a voltage-stabilizing diode 310 and a light-emitting diode 307. The overvoltage protection adopts a mode of a silicon controlled short-circuit power supply to protect the safety of a post-stage circuit. When the voltage regulator circuit outputs a voltage exceeding the expected voltage, the voltage regulator diode 310 on the right side is broken down and conducted in the reverse direction, and the one-way thyristor control electrode 306 is triggered and conducted, so that the fuse 305 is forced to fuse and protect the subsequent circuit.
In the e-shaped multi-electron beam evaporation process, if the crucible is required to be switched, the crucible is directly driven by a motor, automatic and manual driving can be realized, when the crucible is manually controlled, a driving switch motor is turned on to rotate, and when the crucible is turned off, the crucible is stopped, and the crucible can be stopped at any position by the mode, so that the alternate evaporation of the e-shaped multi-electron beam on the film material is realized. For the crucible, the middle large crucible 12 is used for evaporating high-melting point materials, and the outer small crucible 6 can start a plurality of crucibles to evaporate a plurality of materials in a mixed manner. The high melting point material can be preheated according to different physical properties of the evaporation material before the mixed evaporation, so that the splashing interaction can be avoided, and the gas can be removed.
The adjacent electron beams can not only respectively evaporate the peripheral small crucibles 6, but also emit the electron beams together to evaporate the central large crucible 12. If one electron gun is damaged and the diagonal electron beams 4 are respectively started to evaporate the peripheral small crucible 6, high-melting point materials can be evaporated on the central crucible 12 together. And finally, when the thickness of the e-shaped multi-electron beam evaporation thin film reaches the required thickness, firstly closing the baffle above the evaporation crucible, secondly closing the scanning current, and thirdly closing the high-voltage power supply. The electron gun can be ensured to be inflated after being cooled for more than 10 minutes, and the whole e-shaped multi-electron beam evaporation task is completed.
Because the circuit design removes high-voltage fluctuation, the e-shaped multi-electron beam light spot size is more stable, and the deposition rate precision and stability are greatly improved, thereby ensuring the uniformity and repeatability of the film deposition thickness. Compared with the high voltage fluctuation of the traditional electron gun, the stabilized voltage power supply with the overvoltage protection can cut off the high voltage at high speed. The e-shaped multi-beam electron beam evaporation device can automatically recover after high pressure is normal.
The e-beam evaporation apparatus has a partial discharge phenomenon (abnormal discharge) during evaporation of an evaporation material. When abnormal discharge occurs and large current flows, the overcurrent protection circuit can be automatically started to disconnect the electron beam current and high voltage. Automatically recover to after discharge
A normal state.
The cooling water flow is adjusted according to the power of the electron gun in the evaporation process of the electron gun, when the power of the electron gun is increased, the water flow is correspondingly increased, and vice versa, the quality of the cooling water is correspondingly required, and generally, the cooling requirement of the electron gun can be met by selecting high-quality tap water.
The present invention provides a method and a concept for multi-electron beam evaporation, and a method and a way for implementing the technical solution are many, the above description is only a preferred embodiment of the present application, and it should be noted that, for those skilled in the art, a plurality of modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.

Claims (3)

  1. An e-shaped multi-electron beam evaporation device is characterized by comprising e-shaped electron guns and a water-cooled crucible at the center, wherein the e-shaped electron guns comprise cathodes, anodes and focusing electrodes of linear annular tungsten filaments, the cathodes are at negative potential, and the anodes are grounded at positive potential; the water-cooled crucible consists of a small crucible at the periphery of a large crucible at the center, and the small crucible at the periphery is driven to rotate by a motor; multiple electron beams emitted by the e-shaped electron gun carry out evaporation coating on high-melting-point materials on a central large-sized crucible, and the evaporation coating or the rotary evaporation coating is carried out on peripheral crucibles respectively, wherein the respective evaporation coating can realize mixed evaporation on the materials, and the rotary evaporation coating avoids the phenomenon that a corresponding crucible is idle when one electron gun is damaged.
  2. 2. The electron gun circuit of e-shaped multi-electron beam evaporation device as claimed in claim 1, which is composed of a circuit of cathode filament electron emission module, a DC circuit of high voltage electron acceleration module, a scan coil DC excitation circuit of electron beam deflection module;
    the circuit of the cathode filament electron emission module adopts an alternating current 220V power supply, and the alternating current is input into a step-down transformer after voltage regulation, and the maximum secondary output of the step-down transformer is 20V or 60V and is used for heating a cathode linear type annular tungsten filament;
    the high-voltage electronic acceleration module adopts 380V alternating current for power supply, outputs direct-current high voltage after three-phase voltage regulation and boosting and three-phase rectification, adopts relay overcurrent protection for the high-voltage electronic acceleration direct-current power supply, and cuts off the voltage input by the high-voltage power supply when the current exceeds a rated value;
    the electron beam deflection module scans a coil direct current excitation circuit and supplies excitation coils through voltage regulation, voltage reduction and transformation, bridge rectification and a voltage-stabilized power supply; overvoltage protection and voltage stabilization protection are adopted, and the overvoltage protection adopts a mode of a silicon controlled short-circuit power supply to protect the circuit safety.
  3. 3. The electron gun circuit of an e-shaped multi-electron beam evaporation device according to claim 2, wherein a 220V ac power supply (101), a crucible (102), a cathode filament (103), a circuit constituting a cathode filament electron emission module; the 380V three-phase alternating current power supply (201), the diode (202), the resistor (203), the relay (204) form a direct current circuit of the high-voltage electronic acceleration module; 220V alternating current (301), step-down transformer (302), rectifier diode (303), electric capacity (304), fuse (305), silicon controlled rectifier control pole (306), emitting diode (307), three terminal regulator (308), current expansion triode (309), zener diode (310) constitutes electron beam deflection module's scanning coil direct current excitation circuit.
CN201911379047.2A 2019-12-27 2019-12-27 E-shaped multi-electron beam evaporation device and electron gun circuit Active CN111088479B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911379047.2A CN111088479B (en) 2019-12-27 2019-12-27 E-shaped multi-electron beam evaporation device and electron gun circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911379047.2A CN111088479B (en) 2019-12-27 2019-12-27 E-shaped multi-electron beam evaporation device and electron gun circuit

Publications (2)

Publication Number Publication Date
CN111088479A CN111088479A (en) 2020-05-01
CN111088479B true CN111088479B (en) 2022-05-06

Family

ID=70397206

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911379047.2A Active CN111088479B (en) 2019-12-27 2019-12-27 E-shaped multi-electron beam evaporation device and electron gun circuit

Country Status (1)

Country Link
CN (1) CN111088479B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114300323B (en) * 2021-12-29 2024-03-08 核工业理化工程研究院 Method for rapidly controlling on-off of electron beam through pulse width modulation pulse
CN114990495A (en) * 2022-08-04 2022-09-02 怡通科技有限公司 Electron beam high-precision coating equipment
CN115786857B (en) * 2022-12-06 2023-07-28 安徽其芒光电科技有限公司 Vacuum deposition film forming apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004256843A (en) * 2003-02-25 2004-09-16 Jeol Ltd Vacuum vapor deposition apparatus
CN201263084Y (en) * 2008-09-11 2009-06-24 核工业理化工程研究院 Protection circuit for electronic gun power supply
CN202465854U (en) * 2011-12-31 2012-10-03 肇庆市腾胜真空技术工程有限公司 Multi-head electronic gun
CN205473959U (en) * 2016-03-21 2016-08-17 中国计量学院 Two electronic gun evaporation sources
CN106735198A (en) * 2016-11-23 2017-05-31 北京航空航天大学 A kind of electron beam High-precision high-frequency deflection scanning device
CN207933521U (en) * 2018-01-31 2018-10-02 深圳德诚达光电材料有限公司 The evaporative component of electron evaporation vacuum coating equipment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004256843A (en) * 2003-02-25 2004-09-16 Jeol Ltd Vacuum vapor deposition apparatus
CN201263084Y (en) * 2008-09-11 2009-06-24 核工业理化工程研究院 Protection circuit for electronic gun power supply
CN202465854U (en) * 2011-12-31 2012-10-03 肇庆市腾胜真空技术工程有限公司 Multi-head electronic gun
CN205473959U (en) * 2016-03-21 2016-08-17 中国计量学院 Two electronic gun evaporation sources
CN106735198A (en) * 2016-11-23 2017-05-31 北京航空航天大学 A kind of electron beam High-precision high-frequency deflection scanning device
CN207933521U (en) * 2018-01-31 2018-10-02 深圳德诚达光电材料有限公司 The evaporative component of electron evaporation vacuum coating equipment

Also Published As

Publication number Publication date
CN111088479A (en) 2020-05-01

Similar Documents

Publication Publication Date Title
CN111088479B (en) E-shaped multi-electron beam evaporation device and electron gun circuit
US8467211B2 (en) Bipolar pulsed power supply and power supply apparatus having plurality of bipolar pulsed power supplies
RU2557078C2 (en) Electronic beam generator
US8387561B2 (en) Method and apparatus for cathodic arc ion plasma deposition
EP2157205B1 (en) A high-power pulsed magnetron sputtering process as well as a high-power electrical energy source
EP1038045A1 (en) A method and apparatus for magnetically enhanced sputtering
CN1288696C (en) Ion source and its operating method
US9211570B2 (en) Ion bombardment treatment apparatus and method for cleaning of surface of base material using the same
CN103132013A (en) Ion bombardment apparatus and method for cleaning of surface of base material using the same
JP2006169630A (en) Method and apparatus for cathodic arc deposition of materials on a substrate
Allison A direct extraction H-ion source
RU2752334C1 (en) Gas-discharge sputtering apparatus based on planar magnetron with ion source
US20180233316A1 (en) Electron beam projector with linear thermal cathode
KR101953946B1 (en) Plasma generation apparatus, deposition apparatus, and plasma generation method
US3392304A (en) Power supply for an electron beam furnace gun
CN110117772B (en) Ultra-stable three-electrode electron beam evaporation source
CN109791865A (en) Axial electron gun
US9875874B2 (en) Apparatus for suppression of arcs in an electron beam generator
US3801719A (en) Emitter block assembly
CN114134471A (en) Magnetic field generating device and film coating method
Anders et al. Vacuum arc ion source with filtered plasma for macroparticle‐free implantation
Ambasankaran et al. Design of a 5 kW. Electron Beam Furnace
CN114318249A (en) Droplet-free plasma coating arc source structure, coating system and coating method
JP2002025793A (en) Plasma generating apparatus and thin-film forming apparatus
Miljevic Characteristics of the hollow anode ion-electron source

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant