CN111082502A - Reverse-current-preventing MOS tube driving power supply generation circuit - Google Patents
Reverse-current-preventing MOS tube driving power supply generation circuit Download PDFInfo
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- CN111082502A CN111082502A CN201911413350.XA CN201911413350A CN111082502A CN 111082502 A CN111082502 A CN 111082502A CN 201911413350 A CN201911413350 A CN 201911413350A CN 111082502 A CN111082502 A CN 111082502A
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- diode
- power supply
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/02—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from ac mains by converters
- H02J7/04—Regulation of charging current or voltage
- H02J7/06—Regulation of charging current or voltage using discharge tubes or semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
Abstract
The invention provides a reverse-flow current prevention MOS tube driving power supply generation circuit which comprises a diode D1, a diode D2, a capacitor C1 and a capacitor C2, wherein the anode of the diode D2 is connected with a power supply VD of a charger/power supply, the cathode of a diode D2 is connected with the anode of a diode D1, the cathode of the diode D1 is connected with a driving circuit, and one end of the capacitor C1 is connected with the anode output end of the charger/power supply. The invention has the beneficial effects that: the driving power supply is generated by adopting a simple circuit, so that the cost is lower, the occupied area is smaller, and the layout of the PCB is convenient.
Description
Technical Field
The invention relates to a storage battery charging circuit, in particular to a reverse-flow current prevention MOS tube driving power supply generation circuit.
Background
In the field of battery charging, an anti-reverse-flow current diode DF needs to be added at the interface to protect the internal circuit of the charger/power supply, as shown in fig. 1. The anti-reverse-flow diode DF can be placed either outside or inside the charger/power supply, and manufacturers of charging systems tend to place the diode inside the charger/power supply.
In this way, the power loss generated by this anti-reverse-flow diode DF greatly reduces the overall conversion efficiency of the charger/power supply. In order to improve the efficiency, relays can be connected in parallel at two ends of the diode, as shown in fig. 2, the relays are attracted after the diode is conducted, only a small part of charging current by a relay bypass flows through the diode, and the loss of the diode is greatly reduced. The diode DF for preventing reverse current can also be replaced by a MOS transistor SF, as shown in fig. 3, when the body diode of the MOS transistor is turned on, a forward driving voltage is applied between the two poles of the gate source of the SF, and a charging current flows through the conductive channel of the MOS transistor, so that the conduction voltage drop can be significantly reduced, and the effect of reducing the loss can also be achieved.
No matter the two ends of the reverse-flow prevention current diode DF are connected with the relays in parallel, or the MOS tube SF replaces the reverse-flow prevention current diode DF to need a driving power supply. Taking the latter as an example, the driving power supply takes the output positive electrode of the charger/power supply as a reference, and the magnitude of the driving power supply does not exceed the grid limit voltage of the MOS tube, generally about 15V, and is shown in FIG. 4. A special auxiliary winding circuit or an isolation conversion module is required to generate the independent power supply, which not only increases the cost of the system, but also increases the complexity and layout difficulty of the PCB.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a reverse-flow current prevention MOS tube driving power supply generation circuit.
The invention provides a reverse-flow-preventing current MOS tube driving power supply generating circuit, which comprises a diode D1, a diode D2, a capacitor C1 and a capacitor C2, wherein the anode of the diode D2 is connected with a power supply VD of a charger/power supply, the cathode of the diode D2 is connected with the anode of a diode D1, the cathode of the diode D1 is connected with a driving circuit, one end of the capacitor C1 is connected with the anode output end of the charger/power supply, the voltage of the anode output end is Vo, the other end of the capacitor C1 is connected between the cathode of the diode D1 and the driving circuit, one end of the capacitor C2 is connected with a certain node of the charger/power supply, the voltage of the node is Vn, the other end of the capacitor C2 is connected between the cathode of the diode D2 and the anode of the diode D1, the voltage at two ends of the capacitor C1 is the required driving voltage, the capacitor C1 is responsible for storing charge, and ensures the stability of the driving voltage, the premise that the driving voltage can be generated is to find a node n in the charger/power supply, the voltage Vn jumps back and forth between Vo and 0, or a certain voltage between Vo and 0, when Vn is 0 or a certain voltage between Vo and 0, the power supply VD charges the capacitor C2 through the diode D2, the diode D1 is cut off in the reverse direction, when Vn becomes Vo, the voltage at two ends of the capacitor C2 is higher than the voltage at two ends of the capacitor C1, the diode D1 is conducted to charge the capacitor C1, and the diode D2 is cut off in the reverse direction.
As a further improvement of the present invention, the output stage of the charger/power supply is a boost circuit, the boost circuit includes a MOS transistor S and a diode D, the node n is selected at a connection point of the MOS transistor S and the diode D, when the MOS transistor S is turned on, Vn =0, the power supply VD charges a capacitor C2 through a diode D2, when the MOS transistor S is turned off, and when the diode D is turned on, Vn = Vo, the diode D2 is turned off in a reverse direction, and the diode D1 is turned on to charge a capacitor C1.
The invention has the beneficial effects that: through the scheme, the driving power supply is generated by adopting a simple circuit, the cost is lower, the occupied area is smaller, and the layout of the PCB is convenient.
Drawings
Fig. 1 is a charging circuit of a secondary battery in the prior art.
Fig. 2 is a circuit diagram of a prior art relay connected in parallel across a reverse-flow prevention diode DF.
Fig. 3 is a circuit diagram of the prior art in which the anti-reverse diode DF is replaced by a MOS transistor SF.
Fig. 4 is a circuit diagram of a prior art added driving circuit.
Fig. 5 is a circuit diagram of a first embodiment of the reverse-flow-prevention current MOS transistor driving power supply generation circuit according to the invention.
Fig. 6 is a circuit diagram of a second embodiment of the reverse-flow-prevention current MOS transistor driving power supply generation circuit of the present invention.
Fig. 7 is a circuit diagram of a third embodiment of the reverse-flow-prevention current MOS transistor driving power supply generation circuit of the present invention.
Fig. 8 is a circuit diagram of a fourth embodiment of the reverse-flow prevention current MOS transistor driving power supply generation circuit of the present invention.
Detailed Description
The invention is further described with reference to the following description and embodiments in conjunction with the accompanying drawings.
Example one
As shown in fig. 5, a reverse-flow current prevention MOS transistor driving power supply generation circuit includes a diode D1, a diode D2, a capacitor C1, and a capacitor C2, an anode of the diode D2 is connected to a power supply VD of a charger/power supply, a cathode of the diode D2 is connected to an anode of the diode D1, a cathode of the diode D1 is connected to a driving circuit, one end of the capacitor C1 is connected to an anode output terminal of the charger/power supply, a voltage of the anode output terminal is Vo, the other end of the capacitor C1 is connected between the cathode of the diode D1 and the driving circuit, one end of the capacitor C2 is connected to a node of the charger/power supply, a voltage of the node is Vn, the other end of the capacitor C2 is connected between the cathode of the diode D2 and the anode of the diode D1, a voltage at two ends of the capacitor C1 is a required driving voltage, the capacitor C1 is responsible for storing charge, and ensures the stability of the driving voltage, the premise that the driving voltage can be generated is to find a node n in the charger/power supply, the voltage Vn jumps back and forth between Vo and 0, or a certain voltage between Vo and 0, when Vn is 0 or a certain voltage between Vo and 0, the power supply VD charges the capacitor C2 through the diode D2, the diode D1 is cut off in the reverse direction, when Vn becomes Vo, the voltage at two ends of the capacitor C2 is higher than the voltage at two ends of the capacitor C1, the diode D1 is conducted to charge the capacitor C1, and the diode D2 is cut off in the reverse direction.
The present invention can generate the driving power supply by only using a few resistance-capacitance and diodes to build a simple circuit, which is shown as a circuit in a dashed box in fig. 5.
Example two
As shown in fig. 6, taking the output stage of the charger/power supply as a boost circuit as an example, the node n is selected at the connection point between the MOS transistor S and the diode D, when Vn =0 after the MOS transistor S is turned on, the power supply VD may charge the capacitor C2 through the diode D2, and when the MOS transistor S is turned off and the diode D is turned on, Vn = Vo, the diode D2 is turned off in the reverse direction, and the diode D1 is turned on to charge the capacitor C1. The power supply VD can share one path with the driving power supply of the MOS tube S.
EXAMPLE III
As shown in fig. 7, the output stage of many charging power supplies is LLC, and when the secondary side of the transformer is full-bridge rectified, it can also be used to generate the driving power supply, and as shown in fig. 7, the full-bridge rectified switching tubes S1 to S4 can be replaced by diodes. When the full-bridge rectifier switch tube S4 is turned on, the power VD charges the capacitor C2 through the diode D2, and the diode D1 is turned off in the reverse direction. When the full-bridge rectifier switching tube S2 is turned on, the voltage across the capacitor C2 is higher than the voltage across the capacitor C1, the diode D1 is turned on to charge the capacitor C1, and the diode D2 is turned off in the reverse direction. The power supply VD can share with the driving power supplies of the full-bridge rectifying switch tube S3 and the full-bridge rectifying switch tube S4.
Example four
As shown in fig. 8, the LLC secondary side can also be used to generate drive power when full-wave rectification is employed.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (3)
1. A reverse-flow current prevention MOS tube driving power generation circuit is characterized in that: the charger comprises a diode D1, a diode D2, a capacitor C1 and a capacitor C2, wherein the anode of the diode D2 is connected with a power supply VD of the charger/power supply, the cathode of the diode D2 is connected with the anode of the diode D1, the cathode of the diode D1 is connected with a driving circuit, one end of the capacitor C1 is connected with the anode output end of the charger/power supply, the voltage of the anode output end of the charger/power supply is Vo, the other end of the capacitor C1 is connected between the cathode of the diode D1 and the driving circuit, one end of the capacitor C2 is connected with a node of the charger/power supply, the voltage of the node is Vn, the other end of the capacitor C2 is connected between the cathode of the diode D2 and the anode of the diode D1, the voltage at two ends of the capacitor C1 is a required driving voltage, the capacitor C1 is responsible for storing charges, and ensuring the stability of, the premise that the driving voltage can be generated is to find a node n in the charger/power supply, the voltage Vn jumps back and forth between Vo and 0 or is a certain voltage between Vo and 0, when Vn is 0 or is a certain voltage between Vo and 0, the power supply VD charges the capacitor C2 through the diode D2, the diode D1 is cut off in the reverse direction, when Vn becomes Vo, the voltage at the two ends of the capacitor C2 is higher than the voltage at the two ends of the capacitor C1, the diode D1 is conducted to charge the capacitor C1, and the diode D2 is cut off in the reverse direction.
2. The reverse-flow-prevention current MOS tube driving power generation circuit as claimed in claim 1, wherein: the anti-reverse device is an anti-reverse diode or an MOS tube.
3. The reverse-flow-prevention current MOS tube driving power generation circuit as claimed in claim 1, wherein: the output stage of the charger/power supply is a boost circuit, the boost circuit comprises a MOS tube S and a diode D, a node n is selected at a connection point of the MOS tube S and the diode D, Vn =0 after the MOS tube S is switched on, a power supply VD charges a capacitor C2 through a diode D2, Vn = Vo after the MOS tube S is switched off and the diode D is switched on, a diode D2 is reversely cut off, and a diode D1 is switched on to charge a capacitor C1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911413350.XA CN111082502A (en) | 2019-12-31 | 2019-12-31 | Reverse-current-preventing MOS tube driving power supply generation circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911413350.XA CN111082502A (en) | 2019-12-31 | 2019-12-31 | Reverse-current-preventing MOS tube driving power supply generation circuit |
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| CN111082502A true CN111082502A (en) | 2020-04-28 |
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| CN201911413350.XA Pending CN111082502A (en) | 2019-12-31 | 2019-12-31 | Reverse-current-preventing MOS tube driving power supply generation circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111614255A (en) * | 2020-04-29 | 2020-09-01 | 南宁学院 | Portable voltage converter |
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- 2019-12-31 CN CN201911413350.XA patent/CN111082502A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111614255A (en) * | 2020-04-29 | 2020-09-01 | 南宁学院 | Portable voltage converter |
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