CN211880147U - Reverse-current-preventing MOS tube driving power supply generation circuit - Google Patents
Reverse-current-preventing MOS tube driving power supply generation circuit Download PDFInfo
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- CN211880147U CN211880147U CN201922461433.8U CN201922461433U CN211880147U CN 211880147 U CN211880147 U CN 211880147U CN 201922461433 U CN201922461433 U CN 201922461433U CN 211880147 U CN211880147 U CN 211880147U
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Abstract
The utility model provides a prevent flowing backward current MOS pipe drive power supply and produce circuit, including diode D1, diode D2, electric capacity C1, electric capacity C2, diode D2's positive pole connects in the power VD of charger/power, diode D2's negative pole with diode D1's positive pole is connected, diode D1's negative pole is connected with drive circuit, electric capacity C1's one end is connected in the anodal output of charger/power. The utility model has the advantages that: the driving power supply is generated by adopting a simple circuit, so that the cost is lower, the occupied area is smaller, and the layout of the PCB is convenient.
Description
Technical Field
The utility model relates to a battery charging circuit especially relates to a prevent flowing backward electric current MOS pipe drive power supply and produce circuit.
Background
In the field of battery charging, an anti-reverse-flow current diode DF needs to be added at the interface to protect the internal circuit of the charger/power supply, as shown in fig. 1. The anti-reverse-flow diode DF can be placed either outside or inside the charger/power supply, and manufacturers of charging systems tend to place the diode inside the charger/power supply.
In this way, the power loss generated by this anti-reverse-flow diode DF greatly reduces the overall conversion efficiency of the charger/power supply. In order to improve the efficiency, relays can be connected in parallel at two ends of the diode, as shown in fig. 2, the relays are attracted after the diode is conducted, only a small part of charging current by a relay bypass flows through the diode, and the loss of the diode is greatly reduced. The diode DF for preventing reverse current can also be replaced by a MOS transistor SF, as shown in fig. 3, when the body diode of the MOS transistor is turned on, a forward driving voltage is applied between the two poles of the gate source of the SF, and a charging current flows through the conductive channel of the MOS transistor, so that the conduction voltage drop can be significantly reduced, and the effect of reducing the loss can also be achieved.
No matter the two ends of the reverse-flow prevention current diode DF are connected with the relays in parallel, or the MOS tube SF replaces the reverse-flow prevention current diode DF to need a driving power supply. Taking the latter as an example, the driving power supply takes the output positive electrode of the charger/power supply as a reference, and the magnitude of the driving power supply does not exceed the grid limit voltage of the MOS tube, generally about 15V, and is shown in FIG. 4. A special auxiliary winding circuit or an isolation conversion module is required to generate the independent power supply, which not only increases the cost of the system, but also increases the complexity and layout difficulty of the PCB.
Disclosure of Invention
In order to solve the problems in the prior art, the utility model provides a prevent flowing backward current MOS pipe drive power supply production circuit.
The utility model provides a prevent flowing backward current MOS pipe drive power supply production circuit, including diode D1, diode D2, electric capacity C1, electric capacity C2, diode D2's positive pole connects in charger/power supply's power VD, diode D2's negative pole with diode D1's positive pole is connected, diode D1's negative pole is connected with drive circuit, electric capacity C1's one end is connected in charger/power supply's positive output terminal, the voltage of positive output terminal is Vo, electric capacity C1's the other end connect in between diode D1's negative pole, drive circuit, electric capacity C2's one end is connected in certain node of charger/power supply, the voltage of node is Vn, electric capacity C2's the other end connect in between diode D2's negative pole, diode D1's positive pole, the voltage at electric capacity C1 both ends is required drive voltage promptly, the capacitor C1 is responsible for storing charge, and ensures the stability of the driving voltage, the premise that the driving voltage can be generated is to find a node n in the charger/power supply, the voltage Vn jumps back and forth between Vo and 0, or a certain voltage between Vo and 0, when Vn is 0 or a certain voltage between Vo and 0, the power supply VD charges the capacitor C2 through the diode D2, the diode D1 is cut off in the reverse direction, when Vn becomes Vo, the voltage at two ends of the capacitor C2 is higher than the voltage at two ends of the capacitor C1, the diode D1 is conducted to charge the capacitor C1, and the diode D2 is cut off in the reverse direction.
As a further improvement of the utility model, the output stage of charger/power is the boost circuit, the boost circuit includes MOS pipe S and diode D, node n selects the tie point at MOS pipe S and diode D, and after MOS pipe S switched on, Vn =0, and power VD charges for electric capacity C2 through diode D2, and after MOS pipe S closed, diode D switched on, Vn = Vo, and diode D2 is reverse to be ended, and diode D1 switches on and charges for electric capacity C1.
The utility model has the advantages that: through the scheme, the driving power supply is generated by adopting a simple circuit, the cost is lower, the occupied area is smaller, and the layout of the PCB is convenient.
Drawings
Fig. 1 is a charging circuit of a secondary battery in the prior art.
Fig. 2 is a circuit diagram of a prior art relay connected in parallel across a reverse-flow prevention diode DF.
Fig. 3 is a circuit diagram of the prior art in which the anti-reverse diode DF is replaced by a MOS transistor SF.
Fig. 4 is a circuit diagram of a prior art added driving circuit.
Fig. 5 is a circuit diagram of a first embodiment of the reverse-flow-prevention current MOS transistor driving power supply generation circuit of the present invention.
Fig. 6 is a circuit diagram of a second embodiment of the reverse-flow-prevention current MOS transistor driving power supply generation circuit of the present invention.
Fig. 7 is a circuit diagram of a third embodiment of the reverse-flow-prevention current MOS transistor driving power supply generation circuit of the present invention.
Fig. 8 is a circuit diagram of a fourth embodiment of the reverse-flow-prevention current MOS transistor driving power supply generation circuit of the present invention.
Detailed Description
The present invention will be further described with reference to the following description and embodiments.
Example one
As shown in fig. 5, a reverse-flow current prevention MOS transistor driving power supply generation circuit includes a diode D1, a diode D2, a capacitor C1, and a capacitor C2, an anode of the diode D2 is connected to a power supply VD of a charger/power supply, a cathode of the diode D2 is connected to an anode of the diode D1, a cathode of the diode D1 is connected to a driving circuit, one end of the capacitor C1 is connected to an anode output terminal of the charger/power supply, a voltage of the anode output terminal is Vo, the other end of the capacitor C1 is connected between the cathode of the diode D1 and the driving circuit, one end of the capacitor C2 is connected to a node of the charger/power supply, a voltage of the node is Vn, the other end of the capacitor C2 is connected between the cathode of the diode D2 and the anode of the diode D1, a voltage at two ends of the capacitor C1 is a required driving voltage, the capacitor C1 is responsible for storing charge, and ensures the stability of the driving voltage, the premise that the driving voltage can be generated is to find a node n in the charger/power supply, the voltage Vn jumps back and forth between Vo and 0, or a certain voltage between Vo and 0, when Vn is 0 or a certain voltage between Vo and 0, the power supply VD charges the capacitor C2 through the diode D2, the diode D1 is cut off in the reverse direction, when Vn becomes Vo, the voltage at two ends of the capacitor C2 is higher than the voltage at two ends of the capacitor C1, the diode D1 is conducted to charge the capacitor C1, and the diode D2 is cut off in the reverse direction.
The utility model discloses only build simple circuit with several resistance-capacitance and diode and just can produce this drive power supply, see the dotted line frame inner circuit in fig. 5.
Example two
As shown in fig. 6, taking the output stage of the charger/power supply as a boost circuit as an example, the node n is selected at the connection point between the MOS transistor S and the diode D, when Vn =0 after the MOS transistor S is turned on, the power supply VD may charge the capacitor C2 through the diode D2, and when the MOS transistor S is turned off and the diode D is turned on, Vn = Vo, the diode D2 is turned off in the reverse direction, and the diode D1 is turned on to charge the capacitor C1. The power supply VD can share one path with the driving power supply of the MOS tube S.
EXAMPLE III
As shown in fig. 7, the output stage of many charging power supplies is LLC, and when the secondary side of the transformer is full-bridge rectified, it can also be used to generate the driving power supply, and as shown in fig. 7, the full-bridge rectified switching tubes S1 to S4 can be replaced by diodes. When the full-bridge rectifier switch tube S4 is turned on, the power VD charges the capacitor C2 through the diode D2, and the diode D1 is turned off in the reverse direction. When the full-bridge rectifier switching tube S2 is turned on, the voltage across the capacitor C2 is higher than the voltage across the capacitor C1, the diode D1 is turned on to charge the capacitor C1, and the diode D2 is turned off in the reverse direction. The power supply VD can share with the driving power supplies of the full-bridge rectifying switch tube S3 and the full-bridge rectifying switch tube S4.
Example four
As shown in fig. 8, the LLC secondary side can also be used to generate drive power when full-wave rectification is employed.
The foregoing is a more detailed description of the present invention, taken in conjunction with the specific preferred embodiments thereof, and it is not intended that the invention be limited to the specific embodiments shown and described. To the utility model belongs to the technical field of ordinary technical personnel, do not deviate from the utility model discloses under the prerequisite of design, can also make a plurality of simple deductions or replacement, all should regard as belonging to the utility model discloses a protection scope.
Claims (2)
1. A reverse-flow current prevention MOS tube driving power generation circuit is characterized in that: the charger comprises a diode D1, a diode D2, a capacitor C1 and a capacitor C2, wherein the anode of the diode D2 is connected with a power supply VD of the charger/power supply, the cathode of the diode D2 is connected with the anode of the diode D1, the cathode of the diode D1 is connected with a driving circuit, one end of the capacitor C1 is connected with the anode output end of the charger/power supply, the voltage of the anode output end of the charger/power supply is Vo, the other end of the capacitor C1 is connected between the cathode of the diode D1 and the driving circuit, one end of the capacitor C2 is connected with a node of the charger/power supply, the voltage of the node is Vn, the other end of the capacitor C2 is connected between the cathode of the diode D2 and the anode of the diode D1, the voltage at two ends of the capacitor C1 is a required driving voltage, the capacitor C1 is responsible for storing charges, and ensuring the stability of, the premise that the driving voltage can be generated is to find a node n in the charger/power supply, the voltage Vn jumps back and forth between Vo and 0 or is a certain voltage between Vo and 0, when Vn is 0 or is a certain voltage between Vo and 0, the power supply VD charges the capacitor C2 through the diode D2, the diode D1 is cut off in the reverse direction, when Vn becomes Vo, the voltage at the two ends of the capacitor C2 is higher than the voltage at the two ends of the capacitor C1, the diode D1 is conducted to charge the capacitor C1, and the diode D2 is cut off in the reverse direction.
2. The reverse-flow-prevention current MOS tube driving power generation circuit as claimed in claim 1, wherein: the output stage of the charger/power supply is a boost circuit, the boost circuit comprises a MOS tube S and a diode D, a node n is selected at a connection point of the MOS tube S and the diode D, Vn =0 after the MOS tube S is switched on, a power supply VD charges a capacitor C2 through a diode D2, Vn = Vo after the MOS tube S is switched off and the diode D is switched on, a diode D2 is reversely cut off, and a diode D1 is switched on to charge a capacitor C1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922461433.8U CN211880147U (en) | 2019-12-31 | 2019-12-31 | Reverse-current-preventing MOS tube driving power supply generation circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922461433.8U CN211880147U (en) | 2019-12-31 | 2019-12-31 | Reverse-current-preventing MOS tube driving power supply generation circuit |
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| Publication Number | Publication Date |
|---|---|
| CN211880147U true CN211880147U (en) | 2020-11-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922461433.8U Expired - Fee Related CN211880147U (en) | 2019-12-31 | 2019-12-31 | Reverse-current-preventing MOS tube driving power supply generation circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113872177A (en) * | 2021-10-14 | 2021-12-31 | 上海军陶科技股份有限公司 | Anti-reverse-filling circuit based on field effect transistor |
-
2019
- 2019-12-31 CN CN201922461433.8U patent/CN211880147U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113872177A (en) * | 2021-10-14 | 2021-12-31 | 上海军陶科技股份有限公司 | Anti-reverse-filling circuit based on field effect transistor |
| CN113872177B (en) * | 2021-10-14 | 2022-08-16 | 上海军陶科技股份有限公司 | Anti-reverse-filling circuit based on field effect transistor |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201106 Termination date: 20211231 |
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| CF01 | Termination of patent right due to non-payment of annual fee |