CN111082315A - Laser directional waveguide coupling structure - Google Patents

Laser directional waveguide coupling structure Download PDF

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CN111082315A
CN111082315A CN201911149949.7A CN201911149949A CN111082315A CN 111082315 A CN111082315 A CN 111082315A CN 201911149949 A CN201911149949 A CN 201911149949A CN 111082315 A CN111082315 A CN 111082315A
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semiconductor
metal
thickness
layer
waveguide
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CN111082315B (en
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张柏富
胡海峰
朱康
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Nanjing University of Science and Technology
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Nanjing University of Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures

Abstract

The invention provides a laser directional waveguide coupling structure which comprises a metal semiconductor resonant cavity and a semiconductor waveguide structure positioned at the bottom of the metal semiconductor resonant cavity, wherein the metal semiconductor resonant cavity comprises a metal semiconductor, and an insulating material layer and a metal material layer which are sequentially wrapped on the surface of the metal semiconductor. The invention has simple structure and easy manufacture, and can realize the function of directional coupling output of the energy of the nano laser in the waveguide.

Description

Laser directional waveguide coupling structure
Technical Field
The invention belongs to the field of semiconductor lasers, and particularly relates to a directional waveguide coupling structure of a laser.
Background
The metal semiconductor resonant cavity laser has the characteristics of small size, low excitation energy and the like, and can be widely applied to the fields of large-scale photonic integrated circuits, optical communication and the like as a subminiature light source. Waveguide coupling of metal-semiconductor resonators is the technical basis for the above-mentioned applications. Currently, researchers have developed various resonant cavity waveguide coupling structures, wherein higher coupling efficiency can be obtained based on the resonant cavity bottom embedded waveguide structure. However, the optical mode coupled into the waveguide propagates symmetrically to both sides of the waveguide, and directional waveguide coupling is difficult to achieve.
Disclosure of Invention
The invention aims to provide a laser directional waveguide coupling structure.
The technical solution for realizing the purpose of the invention is as follows: a laser directional waveguide coupling structure comprisesThe metal semiconductor resonant cavity comprises a metal semiconductor, an insulating material layer and a metal material layer, wherein the insulating material layer and the metal material layer are sequentially wrapped on the surface of the metal semiconductor, the metal semiconductor comprises a lower cladding layer, a core layer, an upper cladding layer and a top layer which are sequentially stacked, the lower cladding layer is arranged at one end close to the semiconductor waveguide structure, the core layer is made of InGaAs material, the lower cladding layer is made of n-doped InP material, the upper cladding layer is made of p-doped InP material, the top layer is made of p-doped InGaAs material, the metal semiconductor resonant cavity is in an asymmetric capsule shape, the semiconductor waveguide structure comprises a substrate, a core layer and an upper cladding layer, the lower cladding layer of the metal semiconductor resonant cavity is arranged on the upper cladding layer of the semiconductor waveguide structure, and the substrate and the upper cladding2The core layer is Si.
Preferably, one reflecting end face of the metal-semiconductor resonant cavity is a cuboid, and the other reflecting end face of the metal-semiconductor resonant cavity is a cylinder.
Preferably, the method for determining the size of the metal-semiconductor resonant cavity comprises the following steps:
the length and the width of the metal semiconductor are set, the radius of the curved surface of the cylinder is optimized, and the radius of the curved surface with the coupling efficiency difference of more than one order of magnitude between the reflecting end surfaces at two sides is set as the radius of the curved surface of the cylinder.
Preferably, the thickness of the metal semiconductor lower cladding layer is 300-500 nm; the thickness of the metal semiconductor core layer is 200-400 nm; the thickness of the metal semiconductor upper cladding layer is 300-500 nm; the thickness of the top layer of the metal semiconductor is 100-200 nm; the length of the metal semiconductor resonant cavity is 500-1500 nm; the width of the metal semiconductor resonant cavity is 300-600 nm.
Preferably, the thickness of the metal semiconductor lower cladding layer is 300nm-350 nm; the thickness of the metal semiconductor core layer is 300nm or 400 nm; the thickness of the metal semiconductor upper cladding is 400nm-500 nm; the thickness of the top layer of the metal semiconductor is 100nm-150 nm; the length of the metal semiconductor resonant cavity is 1000-1500 nm; the width of the metal semiconductor resonant cavity is 400nm-500 nm.
Preferably, the thickness of the metal semiconductor lower cladding is 300nm, the thickness of the metal semiconductor core layer is 300nm, the thickness of the metal semiconductor upper cladding layer is 500nm, the thickness of the metal semiconductor top layer is 100nm, the length of the metal semiconductor resonant cavity is 1270nm, and the width of the metal semiconductor resonant cavity is 400 nm.
Preferably, the thickness of the semiconductor waveguide core layer is 100-300 nm; the thickness of the semiconductor waveguide upper cladding is 50-200 nm.
Preferably, the thickness of the semiconductor waveguide core layer is 150nm-200 nm; the thickness of the semiconductor waveguide upper cladding is 100nm-200 nm.
Preferably, the semiconductor waveguide core layer has a thickness of 150 nm; the semiconductor waveguide upper cladding thickness is 150 nm.
Compared with the prior art, the invention has the following remarkable advantages: the invention has simple structure and easy manufacture, and can realize the function of directional coupling output of the energy of the nano laser in the waveguide; the invention directly changes the curvatures of the two sides of the resonant cavity, causes the coupling efficiency of the two ends of the semiconductor waveguide to be different due to the uneven mode distribution in the resonant cavity, can realize the directional waveguide coupling by optimizing the structural parameters and causing the coupling efficiency of the two ends of the structural waveguide to be different by more than one order of magnitude, and provides technical reference for the application of the metal semiconductor resonant cavity laser in the fields of large-scale photonic integrated circuits, optical communication and the like.
The present invention is described in further detail below with reference to the attached drawings.
Drawings
Fig. 1 is a schematic structural view of the present invention.
FIG. 2 is a graph of electric field intensity distribution in the x-y plane, x-z plane, and y-z plane of a laser directional waveguide coupling structure.
Detailed Description
A laser directional waveguide coupling structure comprises a metal semiconductor resonant cavity and a semiconductor waveguide structure positioned at the bottom of the metal semiconductor resonant cavity, wherein the metal semiconductor resonant cavity comprises a metal semiconductor, and an insulating material layer and a metal material layer which are sequentially wrapped on the surface of the metal semiconductor, and in some embodiments, the insulating material layer is made of SiO2(ii) a In certain embodiments, the metallic material layer is Ag; the metal semiconductorThe metal semiconductor resonant cavity comprises a lower cladding layer, a core layer, an upper cladding layer and a top layer which are sequentially stacked, wherein the lower cladding layer is arranged at one end close to the semiconductor waveguide structure, the core layer is made of InGaAs material, the lower cladding layer is made of n-doped InP material, the upper cladding layer is made of p-doped InP material, the top layer is made of p-doped InGaAs material, and the metal semiconductor resonant cavity is in an asymmetric capsule shape;
one reflecting end face of the metal semiconductor resonant cavity is a cuboid, the other reflecting end face of the metal semiconductor resonant cavity is cylindrical, and the metal semiconductor resonant cavity can also be understood as a cuboid, and the side face where one long edge of the cuboid is located is a curved surface, so that an asymmetric Gaussian-like resonant mode is generated, the coupling efficiency of two ends of a waveguide is different by more than ten times, and directional waveguide coupling output is realized.
The size determination method of the metal semiconductor resonant cavity comprises the following steps:
the length and the width of the metal semiconductor are set, and the radius of the curved surface of the cylinder of the resonant cavity is optimized to achieve the purpose that the coupling efficiency at two sides differs by more than one order of magnitude, so that the waveguide energy is directionally coupled and output.
The semiconductor waveguide structure comprises a substrate, a core layer and an upper cladding layer, wherein the lower cladding layer of the metal semiconductor resonant cavity is arranged on the upper cladding layer of the semiconductor waveguide structure, and the substrate and the upper cladding layer are both SiO2The core layer is Si.
In a further embodiment, the thickness of the metal-semiconductor lower cladding layer is 300-500nm, and the refractive index is 3.17.
Preferably, the metal-semiconductor lower cladding layer has a thickness of 300nm to 350 nm.
More preferably, the metal-semiconductor lower cladding layer has a thickness of 300 nm.
In a further embodiment, the thickness of the metal semiconductor core layer is 200-400nm, and the refractive index is 3.53;
preferably, the thickness of the metal semiconductor core layer is 300nm or 400 nm;
more preferably, the metal semiconductor core layer has a thickness of 300 nm.
In a further embodiment, the thickness of the metal semiconductor upper cladding layer is 300-500nm, and the refractive index is 3.17;
preferably, the thickness of the metal semiconductor upper cladding layer is 400nm-500 nm;
more preferably, the metal-semiconductor upper cladding layer has a thickness of 500 nm.
In a further embodiment, the thickness of the top layer of the metal semiconductor is 100-200nm, and the refractive index is 3.6;
preferably, the thickness of the top layer of the metal semiconductor is 100nm-150 nm;
more preferably, the thickness of the top layer of the metal-semiconductor is 100 nm.
In a further embodiment, the length of the metal semiconductor resonant cavity is 500-1500 nm;
preferably, the length of the metal semiconductor resonant cavity is 1000-1500 nm;
more preferably, the length of the metal-semiconductor resonant cavity is 1270 nm.
In a further embodiment, the width of the metal-semiconductor resonant cavity is 300-600 nm;
preferably, the width of the metal-semiconductor resonant cavity is 400nm-500 nm;
more preferably, the metal-semiconductor resonant cavity width is 400 nm.
In a further embodiment, the thickness of the semiconductor waveguide core layer is 100-300nm, and the refractive index is 3.42;
preferably, the thickness of the semiconductor waveguide core layer is 150nm-200 nm;
more preferably, the semiconductor waveguide core layer has a thickness of 150 nm.
In a further embodiment, the semiconductor waveguide upper cladding has a thickness of 50-200nm and a refractive index of 1.45;
preferably, the semiconductor waveguide upper cladding layer has a thickness of 100nm to 200 nm;
more preferably, the semiconductor waveguide upper cladding layer has a thickness of 150 nm.
The working principle of the invention is as follows: the light source resonates in the metal semiconductor resonant cavity with the asymmetric structure to form an asymmetric optical resonant mode, so that evanescent waves of the light source are asymmetrically coupled into the semiconductor waveguide structure, different coupling efficiencies are achieved in different propagation directions of the waveguide, and directional waveguide coupling is achieved.
The invention realizes the directional coupling output of the optical mode of the laser, one reflecting end surface of the metal semiconductor resonant cavity is rectangular, the other reflecting end surface is cylindrical with a certain curvature, and an asymmetric Gaussian-like resonant mode is generated, so that the coupling efficiency of the two ends of the waveguide is different by more than ten times, and the directional waveguide coupling output is realized in embodiment 1
As shown in fig. 1, a laser directional waveguide coupling structure includes a metal semiconductor resonant cavity and a semiconductor waveguide structure located at the bottom of the metal semiconductor resonant cavity, where the metal semiconductor resonant cavity includes a metal semiconductor, and an insulating material layer and a metal material layer sequentially wrapped on the surface of the metal semiconductor, and the insulating material layer is made of SiO2The metal material layer is Ag; the metal semiconductor comprises a lower cladding layer, a core layer, an upper cladding layer and a top layer which are sequentially stacked, wherein the lower cladding layer is arranged at one end close to the semiconductor waveguide structure. Wherein the core layer is made of InGaAs material, the thickness is 300nm, and the refractive index is 3.53; the lower cladding is made of n-doped InP material, the thickness is 350nm, and the refractive index is 3.17; the upper cladding layer is made of p-doped InP material, the thickness is 500nm, and the refractive index is 3.17; the top layer was a p-doped InGaAs material with a thickness of 100nm and a refractive index of 3.6.
The semiconductor waveguide structure comprises a substrate, a core layer and an upper cladding layer, wherein the lower cladding layer of the metal semiconductor resonant cavity is arranged on the upper cladding layer of the semiconductor waveguide structure, and the substrate and the upper cladding layer are both SiO2The core layer is Si, the refractive index is 3.42, and the thickness is 150 nm; the refractive index of the upper cladding is 1.45, and the thickness is 150nm
The length of the metal semiconductor cavity is 1270nm, the width of the cavity is 400nm, and the curvature radius of the right end of the resonant cavity is 210 nm. The resonant wavelength of the metal-semiconductor resonant cavity is 1.595um, and the quality factor of the resonant cavity is 192. The length of the semiconductor waveguide structure is 10um, the width of the semiconductor waveguide structure is the same as the width of the whole metal semiconductor resonant cavity and is 660nm, and the waveguide with enough length enables electromagnetic waves to be sufficiently resonated in the waveguide to obtain a stable mode. As can be seen from fig. 2, the energy of the rectangular side waveguide is much more than the output energy of the curved side, and directional waveguide coupling is realized.
According to simulationNumerical results, the coupling efficiency (Γ) across the waveguide was calculated separatelyLAnd ΓR) Is given by a series of formulas
Figure BDA0002283259440000051
Wherein, PLAnd PRPoynting vector, E, perpendicular to the waveguide cross-section on the curved and rectangular sides of the waveguide, respectivelyLAnd EREnergy, E, guided perpendicular to the waveguide cross-section, on the curved and rectangular sides of the waveguide, respectivelytotalIs the total energy radiated outwardly from the hexahedron surrounding the cavity and waveguide structure.
Through result calculation, the coupling efficiency of the curved surface side of the waveguide is 3.18%, the coupling efficiency of the rectangular side of the waveguide is 43.01%, the coupling efficiency of the rectangular side is one order of magnitude larger than that of the curved surface side, the extinction ratio is 13.5, and directional waveguide coupling is achieved.
The invention has simple structure and size in sub-wavelength level, and can effectively realize waveguide coupling and directional output of metal semiconductor nanometer laser energy.

Claims (9)

1. A laser directional waveguide coupling structure is characterized by comprising a metal semiconductor resonant cavity and a semiconductor waveguide structure positioned at the bottom of the metal semiconductor resonant cavity, wherein the metal semiconductor resonant cavity comprises a metal semiconductor, an insulating material layer and a metal material layer which are sequentially wrapped on the surface of the metal semiconductor, the metal semiconductor comprises a lower cladding layer, a core layer, an upper cladding layer and a top layer which are sequentially stacked, the lower cladding layer is arranged at one end close to the semiconductor waveguide structure, the core layer is made of InGaAs materials, the lower cladding layer is made of n-doped InP materials, the upper cladding layer is made of p-doped InP materials, the top layer is made of p-doped InGaAs materials, the metal semiconductor resonant cavity is in an asymmetric capsule shape, the semiconductor waveguide structure comprises a substrate, the core layer and the upper cladding layer, the lower cladding layer of the metal semiconductor resonant cavity is arranged on the upper, the substrate and the upper cladding are both SiO2The core layer is Si.
2. The coupling structure of claim 1, wherein one reflecting end surface of the metal-semiconductor resonant cavity is a cuboid, and the other reflecting end surface is a cylinder.
3. The laser directional waveguide coupling structure of claim 2, wherein the metal-semiconductor resonator cavity is sized by:
the length and the width of the metal semiconductor are set, the radius of the curved surface of the cylinder is optimized, and the radius of the curved surface with the coupling efficiency difference of more than one order of magnitude between the reflecting end surfaces at two sides is set as the radius of the curved surface of the cylinder.
4. The coupling structure of claim 1, wherein the thickness of the metal-semiconductor lower cladding layer is 300-500 nm; the thickness of the metal semiconductor core layer is 200-400 nm; the thickness of the metal semiconductor upper cladding layer is 300-500 nm; the thickness of the top layer of the metal semiconductor is 100-200 nm; the length of the metal semiconductor resonant cavity is 500-1500 nm; the width of the metal semiconductor resonant cavity is 300-600 nm.
5. The coupling structure of the laser directional waveguide of any one of claims 1 to 4, wherein the thickness of the metal-semiconductor lower cladding layer is 300nm to 350 nm; the thickness of the metal semiconductor core layer is 300nm or 400 nm; the thickness of the metal semiconductor upper cladding is 400nm-500 nm; the thickness of the top layer of the metal semiconductor is 100nm-150 nm; the length of the metal semiconductor resonant cavity is 1000-1500 nm; the width of the metal semiconductor resonant cavity is 400nm-500 nm.
6. The coupling structure of claim 1, wherein the thickness of the lower metal-semiconductor cladding layer is 300nm, the thickness of the core metal-semiconductor layer is 300nm, the thickness of the upper metal-semiconductor cladding layer is 500nm, the thickness of the top metal-semiconductor layer is 100nm, the length of the metal-semiconductor resonant cavity is 1270nm, and the width of the metal-semiconductor resonant cavity is 400 nm.
7. The coupling structure of claim 1, wherein the thickness of the semiconductor waveguide core layer is 100-300 nm; the thickness of the semiconductor waveguide upper cladding is 50-200 nm.
8. The laser-guided waveguide coupling structure of claim 1, wherein the semiconductor waveguide core layer has a thickness of 150nm to 200 nm; the thickness of the semiconductor waveguide upper cladding is 100nm-200 nm.
9. The laser-guided waveguide coupling structure of claim 1, wherein the semiconductor waveguide core layer has a thickness of 150 nm; the semiconductor waveguide upper cladding thickness is 150 nm.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115657205A (en) * 2022-12-13 2023-01-31 香港中文大学（深圳） Photonic integrated chip and preparation method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070291808A1 (en) * 2006-06-16 2007-12-20 Nikolai Ledentsov Electrooptically Bragg-reflector stopband-tunable optoelectronic device for high-speed data transfer
CN101741014A (en) * 2009-12-16 2010-06-16 中国科学院半导体研究所 Microcavity laser of lateral coupling output waveguide
US20120155232A1 (en) * 2010-12-16 2012-06-21 Headway Technologies, Inc. Directional waveguide coupler for ABS reflected light
CN102570310A (en) * 2012-01-05 2012-07-11 中国电子科技集团公司第十三研究所 Multi-wavelength semiconductor laser based on annular resonant cavity
CN107305267A (en) * 2016-04-25 2017-10-31 南京理工大学 It is a kind of to produce the ridge waveguide coupling array of super model
CN109244827A (en) * 2018-09-12 2019-01-18 南京理工大学 A kind of Gaussian metal semiconductor resonant cavity for nano laser
CN209217180U (en) * 2018-11-06 2019-08-06 菲比斯微波技术成都有限公司 A kind of orientation waveguide coupler

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070291808A1 (en) * 2006-06-16 2007-12-20 Nikolai Ledentsov Electrooptically Bragg-reflector stopband-tunable optoelectronic device for high-speed data transfer
CN101741014A (en) * 2009-12-16 2010-06-16 中国科学院半导体研究所 Microcavity laser of lateral coupling output waveguide
US20120155232A1 (en) * 2010-12-16 2012-06-21 Headway Technologies, Inc. Directional waveguide coupler for ABS reflected light
CN102570310A (en) * 2012-01-05 2012-07-11 中国电子科技集团公司第十三研究所 Multi-wavelength semiconductor laser based on annular resonant cavity
CN107305267A (en) * 2016-04-25 2017-10-31 南京理工大学 It is a kind of to produce the ridge waveguide coupling array of super model
CN109244827A (en) * 2018-09-12 2019-01-18 南京理工大学 A kind of Gaussian metal semiconductor resonant cavity for nano laser
CN209217180U (en) * 2018-11-06 2019-08-06 菲比斯微波技术成都有限公司 A kind of orientation waveguide coupler

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JI XU: "TM01 mode in acylindrical hybrid plasmonic waveguide with large propagation length", 《APPLIED OPTICS》 *
张柏富: "石墨烯双曲超材料的传输矩阵法优化及传输特性", 《激光与光电子学进展》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115657205A (en) * 2022-12-13 2023-01-31 香港中文大学（深圳） Photonic integrated chip and preparation method thereof
CN115657205B (en) * 2022-12-13 2023-09-05 香港中文大学（深圳） Photon integrated chip and preparation method thereof

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