CN111129950A - Biconcave type metal semiconductor resonant cavity for nano laser - Google Patents

Biconcave type metal semiconductor resonant cavity for nano laser Download PDF

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CN111129950A
CN111129950A CN201911315404.9A CN201911315404A CN111129950A CN 111129950 A CN111129950 A CN 111129950A CN 201911315404 A CN201911315404 A CN 201911315404A CN 111129950 A CN111129950 A CN 111129950A
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layer
cavity
semiconductor
metal
ingaas
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张柏富
朱康
武恒
胡海峰
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Nanjing University of Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1057—Comprising an active region having a varying composition or cross-section in a specific direction varying composition along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3004—Structure or shape of the active region; Materials used for the active region employing a field effect structure for inducing charge-carriers, e.g. FET
    • H01S5/3009—MIS or MOS conffigurations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a double-concave metal semiconductor resonant cavity for a nano laser, which comprises a semiconductor layer, an insulating layer and a metal layer which are sequentially arranged from inside to outside; wherein the semiconductor layer comprises an InGaAs core layer, a p-doped InP material layer, an n-doped InP material layer, and a p-doped InGaAs top contact layer; the lower layer of the InGaAs core layer is a p-doped InP material layer, the upper layer of the InGaAs core layer is an n-doped InP material layer, and a p-doped InGaAs top contact layer is arranged above the n-doped InP material layer; the insulating layer is made of SiO (silicon dioxide) as an insulator material2The semiconductor layer is wrapped on the side wall and the end face of the semiconductor layer; the metal layer is made of a metal material Ag, wraps the outer part of the insulating layer and is in contact with the semiconductor layer on the top. The invention reduces radiation loss and metal surface plasmon loss, has simple structure and easy manufacture, andeffectively reduces the threshold current of the excitation resonant cavity.

Description

Biconcave type metal semiconductor resonant cavity for nano laser
Technical Field
The invention belongs to the technical field of semiconductor nano lasers, and particularly relates to a double-concave metal semiconductor resonant cavity for a nano laser.
Background
The metal semiconductor nano laser is widely researched as an ultra-small-sized light source, and has wide application in the fields of photonic integrated circuits, on-chip optical interconnection, optical communication and the like. As the volume of the resonator decreases, the loss of the laser also increases rapidly, which hinders further miniaturization of the laser. The metal-semiconductor nano-lasers currently in use comprise two modes, namely whispering-gallery mode (fabry-perot mode), the former having a high quality factor but not conducive to waveguide coupling, and the latter having the advantage of easy coupling of mode energy into the integrated waveguide due to reflection loss of the resonator, usually having a low quality factor.
The fabry-perot mode metal semiconductor laser has two types, one is a rectangular cavity structure, and the other is a capsule type resonant cavity structure. The end face and the side wall of the rectangular resonant cavity structure are both straight-wall structures, surface plasmon loss is excited by an electric field perpendicular to a metal-medium interface, and the straight-wall structures of the end face and the side wall of the rectangular resonant cavity bring huge metal loss to the resonant cavity. The capsule type resonant cavity structure introduces a curvature end surface on the basis of the rectangular cavity, and the curvature end surface pushes the resonant cavity mode to the center of the cavity, so that the radiation loss is reduced; meanwhile, the curvature end face reduces the electric field component perpendicular to the end face of the resonant cavity, and the metal loss of the end face area of the resonant cavity is effectively reduced. However, the side walls of the capsule-type resonant cavity are still straight-wall structures, and especially the side walls close to the end faces with the curvature still have large metal loss. In addition, the modes of the two types of resonant cavities are relatively dispersed, the resonant modes are not concentrated in the center of the resonant cavity, and large radiation loss exists.
Disclosure of Invention
The invention aims to provide a double-concave metal semiconductor resonant cavity for a nano laser, which can reduce the energy loss of the metal semiconductor resonant cavity.
The technical solution for realizing the purpose of the invention is as follows: a double concave metal semiconductor resonant cavity for a nano laser comprises a semiconductor layer, an insulating layer and a metal layer which are arranged from inside to outside in sequence;
the semiconductor layer comprises an InGaAs core layer, a p-doped InP material layer, an n-doped InP material layer and a p-doped InGaAs top contact layer; the lower layer of the InGaAs core layer is a p-doped InP material layer, the upper layer of the InGaAs core layer is an n-doped InP material layer, and a p-doped InGaAs top contact layer is arranged on the n-doped InP material layer;
the insulating layer is made of an insulator material SiO2The semiconductor layer is wrapped on the side wall and the end face of the semiconductor layer;
the metal layer is made of a metal material Ag, wraps the outside of the insulating layer and is in contact with the semiconductor layer on the top.
Furthermore, the metal semiconductor resonant cavity is of a biconcave type structure, the end face of the structure has a set curvature, the side wall of the structure has a set concave bending degree, and the curvature of the end face and the bending degree of the side wall are independently adjustable.
Further, the size order of the concave-convex metal semiconductor resonant cavity is in the sub-wavelength level.
Furthermore, the laser mode of the nano laser corresponding to the double-concave metal semiconductor resonant cavity is a Fabry-Perot mode, and a multi-order transverse electric mode can be formed.
Further, the side wall has a set concave bending degree, a cubic function resonant cavity bending side wall curve is specifically adopted, and the formula is as follows:
y＝a·x3+W0/2
wherein y represents the width of the sidewall curve in the y direction and changes with the coordinate x, a represents the degree of bending of the concave curve of the sidewall curve, and W0Representing the beam waist width of the concave curve in the cavity.
Further, the cavity length L of the cavity is 700nm, the maximum width W of the cavity is 520nm, and the beam waist width W of the concave curve in the cavity0And the L/R is 1.43, and R represents the curvature of the curvature end face.
Furthermore, the material layers of the semiconductor layer have the same biconcave shape, the core layer is made of InGaAs material, the thickness is 300nm, and the refractive index is 3.53; the upper and lower layers of the core layer were n-doped and p-doped InP material, respectively, with a thickness of 500nm and a refractive index of 3.17, and the top contact layer was a p-doped InGaAs material with a thickness of 100nm and a refractive index of 3.6.
Compared with the prior art, the invention has the remarkable advantages that: (1) the resonant mode is concentrated at the center of the cavity by utilizing the curvature end surface of the resonant cavity, so that the radiation loss is reduced, and the resonant mode is far away from the metal material layer to reduce the metal surface plasmon loss of the mode; (2) the curve of the double-concave side wall of the resonant cavity is independently adjustable, so that the radiation loss of the resonant cavity can be flexibly regulated, and technical reference is provided for related fields such as design and experiment of the metal semiconductor resonant cavity; (3) the structure is simple, the manufacture is easy, and the threshold current of the excitation resonant cavity is effectively reduced.
Drawings
Fig. 1 is a schematic structural diagram of a biconcave metal-semiconductor resonant cavity for a nanolaser according to the present invention.
FIG. 2 is a plane light intensity distribution diagram of the biconcave type metal-semiconductor resonant cavity and the capsule type metal-semiconductor resonant cavity in the embodiment of the present invention, wherein (a) is the light intensity distribution diagram of the biconcave type metal-semiconductor resonant cavity in x-y plane (core layer), x-z plane, and y-z plane, respectively; (b) the light intensity distribution diagrams of the capsule type metal-semiconductor resonant cavity are respectively an x-y plane (core layer), an x-z plane and a y-z plane.
FIG. 3 shows the cavity quality factor Q and the radiation quality factor Q of the concave-convex metal-semiconductor resonant cavity in an embodiment of the present inventionradAnd a dissipation quality factor QdissWidth W of beam waist following concave0A graph of the variation relationship of (c).
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples.
With reference to fig. 1, the double-concave metal-semiconductor resonant cavity for a nano laser according to the present invention includes a semiconductor layer, an insulating layer and a metal layer sequentially arranged from inside to outside;
the semiconductor layer comprises an InGaAs core layer, a p-doped InP material layer, an n-doped InP material layer and a p-doped InGaAs top contact layer; the lower layer of the InGaAs core layer is a p-doped InP material layer, the upper layer of the InGaAs core layer is an n-doped InP material layer, and a p-doped InGaAs top contact layer is arranged on the n-doped InP material layer;
the insulating layer is made of an insulator material SiO2The semiconductor layer is wrapped on the side wall and the end face of the semiconductor layer;
the metal layer is made of a metal material Ag, wraps the outside of the insulating layer and is in contact with the semiconductor layer on the top.
Furthermore, the metal semiconductor resonant cavity is of a biconcave type structure, the end face of the structure has a certain curvature, the side wall of the structure has a certain concave bending degree, and the curvature of the end face and the bending degree of the side wall are independently adjustable.
Further, the size order of the concave-convex metal semiconductor resonant cavity is in the sub-wavelength level.
Furthermore, the laser mode of the nano laser corresponding to the double-concave metal semiconductor resonant cavity is a Fabry-Perot mode, and a multi-order transverse electric mode can be formed.
Example 1
Fig. 1 is a three-dimensional schematic diagram of a biconcave type metal-semiconductor resonant cavity for a nano-laser according to the present embodiment, a curved sidewall shape of a side wall of the metal-semiconductor resonant cavity is suitable for any concave curve, and a curved sidewall curve of the resonant cavity according to the present embodiment is:
y＝a·x3+W0/2
wherein y represents the width of the sidewall curve in the y direction and changes with the coordinate x, a represents the degree of bending of the concave curve of the sidewall curve, and W0Representing the beam waist width of the concave curve in the cavity.
Taking a cubic function curve as an example, wherein the given function forms a concave curve of the biconcave sidewall, the cavity length L of the resonant cavity is 700nm, the maximum width W of the resonant cavity is 520nm, and the beam waist width W of the concave curve in the resonant cavity00.8W, and 1.43. The semiconductor material layers have the same biconcave shape, the core layer is made of InGaAs material, the thickness is 300nm, and the refractive index is 3.53. The upper and lower layers of the core layer are respectively n-doped and p-doped InP material with thickness of 500nm and refractive index of 3.17, and the top layer is doped with pnGaAs material, the thickness is 100nm, and the refractive index is 3.6.
As shown in FIG. 2, the light intensity distribution diagrams of the biconcave type (taking a cubic function curve as an example) and the capsule type metal-semiconductor resonant cavity are respectively shown, and the simulation software is the logical FDTD Solutions. The cavity length of the double-concave resonant cavity is 0.7 μm, and the beam waist radius is 0.416 μm; the x-y plane of the capsule cavity is in the shape of a capsule, the structure and the material of the capsule cavity are consistent with those of the biconcave semiconductor resonant cavity except for the biconcave side wall curve, the cavity length of the capsule cavity is 0.7 mu m, and the width of the capsule cavity is 0.52 mu m. Through numerical simulation calculation, the excitation wavelengths of the biconcave type resonant cavity and the capsule type resonant cavity are both near 1.55 mu m, the quality factor of the biconcave type resonant cavity is 173, and the quality factor of the capsule type cavity is 141. As can be seen by comparing fig. 2(a) and (b), the surface plasmon loss exists on the metal side wall shell of the capsule cavity, the energy of the double-concave type resonant cavity is concentrated in the cavity, the smaller metal surface plasmon loss exists, and the threshold current is effectively reduced.
Further, according to the numerical simulation result, the threshold gain (g) of the concave-concave type and the capsule type resonant cavity is calculated and comparedth) And a threshold current (I)th) The formula is as follows:
Figure BDA0002324984890000041
the limiting factor of the obtained double concave resonant cavity is 0.43, the threshold gain is 1940/cm, and the threshold current is 344 mu A; the limiting factor of the capsule cavity is 0.46, the threshold gain is 2190/cm, and the threshold current is 800 muA. The restriction factor of the biconcave type is slightly lower than that of the capsule cavity because the cavity volume is smaller and the mode is squeezed to a position closer to the metal side wall; the threshold gain is obviously smaller than that of a capsule cavity, which shows that the requirement on materials is lower from the experimental angle and the implementation is easier; the threshold current is lower than that of the capsule cavity, and is reduced by about 57%.
As shown in fig. 3, where W/W0When 1, the capsule resonator corresponds to a straight side wall. When W/W0>When 1, the side wall of the resonant cavity is concave inwards to form a curved side wall, the volume of the resonant cavity is smaller than that of the capsule type resonant cavity, and the quality factor is dissipatedQdissThe general trend of (a) is first to increase and then to decrease. On the other hand, as the beam waist width is reduced, the resonant mode is modulated, the radiation loss is increased and then reduced after introducing the geometry of the curved sidewall, and the radiation quality factor Q isradThe value correspondingly decreases and then increases rapidly. At QdissAnd QradUnder the combined action of the two concave cavity structures, the quality factor Q of the resonant cavity with smaller volume is improved.
The embodiment shows that the double-concave metal semiconductor resonant cavity for the nano laser has a simple structure, the size order is in the sub-wavelength level, and meanwhile, the radiation loss of the resonant mode can be effectively reduced. The radiation loss of the resonant cavity can be flexibly regulated and controlled by the independently adjustable curve of the double-concave side wall, and the performance of the laser is effectively improved.

Claims (7)

1. A double-concave metal semiconductor resonant cavity for a nano laser is characterized by comprising a semiconductor layer, an insulating layer and a metal layer which are sequentially arranged from inside to outside;
the semiconductor layer comprises an InGaAs core layer, a p-doped InP material layer, an n-doped InP material layer and a p-doped InGaAs top contact layer; the lower layer of the InGaAs core layer is a p-doped InP material layer, the upper layer of the InGaAs core layer is an n-doped InP material layer, and a p-doped InGaAs top contact layer is arranged on the n-doped InP material layer;
the insulating layer is made of an insulator material SiO2The semiconductor layer is wrapped on the side wall and the end face of the semiconductor layer;
the metal layer is made of a metal material Ag, wraps the outside of the insulating layer and is in contact with the semiconductor layer on the top.
2. The cavity of claim 1, wherein the cavity is a biconcave structure having a set curvature on the end surface and a set concave curvature on the side wall, and wherein the curvature of the end surface and the curvature of the side wall are independently adjustable.
3. The cavity of claim 1, wherein the cavity is on the order of sub-wavelength.
4. The double-concave metal-semiconductor resonant cavity for the nano-laser as recited in claim 1, wherein the laser mode of the nano-laser corresponding to the double-concave metal-semiconductor resonant cavity is a fabry-perot mode, which can form a multi-step transverse electric mode.
5. The cavity of claim 2, wherein the sidewall has a predetermined concave curvature, specifically a cubic cavity curved sidewall curve, and the formula is:
y＝a·x3+W0/2
wherein y represents the width of the sidewall curve in the y direction and changes with the coordinate x, a represents the degree of bending of the concave curve of the sidewall curve, and W0Representing the beam waist width of the concave curve in the cavity.
6. The cavity of claim 5, wherein the length L of the cavity is 700nm, the maximum width W of the cavity is 520nm, and the width W of the beam waist of the concave curve in the cavity is 520nm0And the L/R is 1.43, and R represents the curvature of the curvature end face.
7. The cavity as claimed in claim 6, wherein the layers of the semiconductor layer have the same shape of biconcave type, the core layer is InGaAs material with thickness of 300nm and refractive index of 3.53; the upper and lower layers of the core layer were n-doped and p-doped InP material, respectively, with a thickness of 500nm and a refractive index of 3.17, and the top contact layer was a p-doped InGaAs material with a thickness of 100nm and a refractive index of 3.6.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111834889A (en) * 2020-07-23 2020-10-27 中国科学院半导体研究所 Plasmon echo wall optical pump laser and preparation method thereof
CN115459052A (en) * 2022-10-17 2022-12-09 厦门大学 Asymmetric optical resonant cavity wrapped by metal

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CN1879269A (en) * 2003-11-13 2006-12-13 奥斯兰姆奥普托半导体有限责任公司 Optically pumped semiconductor laser device
CN109244827A (en) * 2018-09-12 2019-01-18 南京理工大学 A kind of Gaussian metal semiconductor resonant cavity for nano laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1879269A (en) * 2003-11-13 2006-12-13 奥斯兰姆奥普托半导体有限责任公司 Optically pumped semiconductor laser device
CN109244827A (en) * 2018-09-12 2019-01-18 南京理工大学 A kind of Gaussian metal semiconductor resonant cavity for nano laser

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111834889A (en) * 2020-07-23 2020-10-27 中国科学院半导体研究所 Plasmon echo wall optical pump laser and preparation method thereof
CN115459052A (en) * 2022-10-17 2022-12-09 厦门大学 Asymmetric optical resonant cavity wrapped by metal

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