CN111081831B - Multi-electrode-based illumination communication device and preparation method thereof - Google Patents
Multi-electrode-based illumination communication device and preparation method thereof Download PDFInfo
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- 238000004891 communication Methods 0.000 title claims abstract description 34
- 238000005286 illumination Methods 0.000 title claims description 10
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 229910052681 coesite Inorganic materials 0.000 claims description 21
- 229910052906 cristobalite Inorganic materials 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052682 stishovite Inorganic materials 0.000 claims description 21
- 229910052905 tridymite Inorganic materials 0.000 claims description 21
- 238000001704 evaporation Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
The invention relates to a multi-electrode-based lighting communication device and a preparation method thereof, the device comprises an N-type semiconductor layer, a multi-quantum well layer, an N electrode, a P-type semiconductor layer and a P electrode, wherein the P electrode comprises a P electrode inner ring and a P electrode outer ring, the inner ring and the outer ring respectively comprise four electrode arc sections, the four electrode arc sections are uniformly distributed on the P-type layer from inside to outside, and the four electrodes simultaneously and independently work, so that the form that the traditional electrodes are distributed in a single area is changed, the defect that the current density is too concentrated is overcome, the uniformity of the current injected into an active area is improved, the current diffusion uniformity is improved due to the increase of the current injected into the active area, the response rate of the device is improved, the signal-to-noise ratio of visible light communication, the capacity and the quality of light communication are improved, and the lighting.
Description
Technical Field
The invention relates to the field of lighting communication devices, in particular to a lighting communication device based on multiple electrodes and a preparation method thereof.
Background
In the conventional solid-state light-emitting device, the P-type nitride has low conductivity, so the lateral diffusion of current on the surface of the P-type layer is much weaker than the longitudinal diffusion, and the thickness of the P-type layer is limited, so the current often reaches the active region without being diffused in the lateral direction, and the recombination region is limited to a part of the active region under the electrode. The final result causes the phenomena of uneven brightness, low radiation recombination efficiency, uneven heating and the like of the device, and the performance of the device is seriously influenced.
The visible light communication technology based on the LED combines the characteristics of LED illumination function and modulation, and provides a wireless network coverage function when being used as an illumination light source. Visible light is used as a carrier wave and is modulated by a high-frequency digital signal, and the optical detector converts a received optical signal into an electric signal to realize a communication mode with the visible light as a carrier; based on the dual-purpose characteristics of illumination and communication, the visible light communication technology has a great application prospect in places such as street lamps, markets and the like which need to provide illumination and wireless network coverage at the same time; in the flight process of the airplane, a visible light communication light source in the cabin is modulated by using a satellite signal, so that wireless coverage can be realized, and network connection in the flight process becomes possible. At present, the modulation rate of the dual-purpose light-emitting device for illumination and communication is low, and the dual-purpose light-emitting device cannot respond to high-speed signals. Therefore, how to improve the uniformity of the lateral current spreading of the device and improve the modulation rate of the visible light communication light-emitting device are problems to be solved.
Disclosure of Invention
In view of the technical problems in the prior art, a primary object of the present invention is to provide a multi-electrode based lighting communication device and a method for manufacturing the same.
Based on the above purpose, the invention at least provides the following technical scheme:
the lighting communication device comprises an N-type semiconductor layer, a multi-quantum well layer, an N electrode, a P-type semiconductor layer and a P electrode from bottom to top in sequence, wherein the N electrode is positioned on the surface of the N-type semiconductor layer, the P electrode is positioned on the surface of the P-type semiconductor layer, and four SiO electrodes are arranged along the outer walls of the multi-quantum well layer and the P-type semiconductor layer in the direction of the N-type semiconductor layer2An insulating pad adjacent to two of the SiO2The included angle between the insulating pads is 90 degrees; the P electrode comprises a P electrode inner ring, a P electrode outer ring and a linear electrode, the P electrode inner ring and the P electrode outer ring are concentric circular rings, and the linear electrode extends to the SiO from the P electrode inner ring to the P electrode outer ring along the diameter direction of the circular rings2The insulating pad, the said P electrode inner ring and the said P electrode outer ring are formed by four sections of P electrode arc sections distributed evenly; the N electrode comprises four N electrode arc sections, and the SiO layer is arranged between two adjacent N electrode arc sections2The insulating pads are separated.
Further, the linear electrode is positioned on the SiO2One end of the insulating pad is provided with a P electrode pad.
Furthermore, an N electrode bonding pad is arranged on the N electrode arc section.
Furthermore, the P-electrode inner ring, the corresponding P-electrode arc sections of the P-electrode outer ring and the corresponding linear electrodes form four independent "s" shaped structures.
Furthermore, the N electrode pad is arranged in the middle of the N electrode arc.
Furthermore, the N electrode is annular, and the annular radius of the N electrode is larger than the outer annular radius of the P electrode.
Further, the linear electrode is connected with the middle position of the arc section of the P electrode.
A method for preparing a multi-electrode based illumination communication device comprises the following steps:
depositing an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer on a substrate to form an epitaxial wafer;
sequentially forming an N-type semiconductor table top and a table top comprising a multi-quantum well layer and a P-type semiconductor on the epitaxial wafer by adopting a photoetching process;
deposition of SiO2An insulating pad for depositing SiO of a predetermined shape to the mesa of the N-type semiconductor along the sidewall of the mesa including the MQW layer and the P-type semiconductor2An insulating pad;
evaporating a P electrode on the P-type semiconductor layer, wherein the P electrode comprises a P electrode inner ring, a P electrode outer ring and four linear electrodes which are of two concentric ring structures, the linear electrodes are crossed with the P electrode inner ring and the P electrode outer ring, an included angle between two adjacent linear electrodes is 90 degrees, and one end of each linear electrode extends to the SiO2An insulating pad;
etching the P electrode, and etching the inner ring of the P electrode and the outer ring of the P electrode into four parts which are uniformly distributed along an angular bisector of an included angle formed by every two adjacent linear electrodes, wherein the four parts are not communicated with each other;
evaporating an N electrode, and evaporating an annular N electrode on the N-type semiconductor table board;
and etching the N-type electrode to form four uniformly distributed parts which are not mutually communicated.
Further, the step of evaporating the P electrode also comprises that the linear electrode is close to the SiO2And an end part of one side of the insulating pad is plated with a bonding pad structure by evaporation.
Furthermore, the step of evaporating the N electrode also comprises evaporating four bonding pads, and the bonding pads are respectively positioned in the middle of each N electrode.
In summary, the present invention has the following advantages:
(1) the P electrode comprises a P electrode inner ring and a P electrode outer ring, the P electrode inner ring and the P electrode are respectively provided with four P electrode arc sections which are uniformly distributed on a P type semiconductor layer from inside to outside in an annular mode, and the four electrode arc sections simultaneously and independently work, so that the form that the traditional electrode is distributed in a single area is changed, the defect that the current density is excessively concentrated is overcome, the uniformity of the current injected into an active area is improved, the current diffusion uniformity is improved due to the increase of the current injected into the active area, the response speed of a device is improved, the signal-to-noise ratio of visible light communication and the capacity and quality of optical communication are improved, and the lighting requirement is considered while the communication speed is emphasized.
(2) The special structure of the P-type electrode isolates the P-type layer into a plurality of approximately independent different areas, each area can be approximately an independent current-limited aperture, the aperture limits a current flow path, junction capacitance can be reduced, response rate can be improved, and therefore the effect of further improving the transmission rate of a system is achieved, and visible light communication capacity is improved.
Drawings
Fig. 1 is a schematic view of the overall effect of the illumination communication device of the present invention.
Fig. 2 is a top view of the illuminated communication device of the present invention.
Description of the drawings:
1 is the outer ring of the P electrode, 2 is SiO2An insulating pad, 3 is a P electrode pad, 4 is a P electrode inner ring, 5 is an N electrode pad, 6 is an N electrode, 7 is a P type semiconductor layer, 8 is an N type semiconductor layer, 1-1 to 1-4 are partial P electrode outer rings respectively, 2-1 to 2-4 are four SiO2The insulating pad, 3-1 to 3-4 are four P electrode pads, 4-1 to 4-4 are partial P electrode inner rings respectively, 5-1 to 5-4 are four N electrode pads, and 6-1 to 6-4 are partial N electrodes respectively.
Detailed Description
The present invention will be described in further detail below.
The multi-electrode-based lighting communication device of the invention has the structure as shown in fig. 1 to 2, and sequentially comprises an N-type semiconductor layer, a multi-quantum well layer, an N electrode, a P-type semiconductor layer and a P electrode from bottom to top, wherein the N electrode is positioned on the surface of the N-type semiconductor layer, and the P electrode is positioned on the surface of the P-type semiconductor layer.
The lighting communication device also comprises four SiO2Insulating pads 2-1 to 2-4, SiO2The insulating pad is arranged along the outer walls of the multiple quantum well layer and the P-type semiconductor layer to the surface of the N-type semiconductor layer, and two adjacent SiO layers2The included angle between the insulating pads is 90 degrees.
The P electrode comprises a P electrode inner ring 4, a P electrode outer ring 1 and a linear electrode.
The inner ring 4 of the P electrode and the outer ring 1 of the P electrode are concentric circular rings, the inner ring of the P electrode and the outer ring of the P electrode are composed of four P electrode arc sections 4-1 to 4-4 and 1-1 to 1-4 which are uniformly distributed, and the P electrode arc sections are not conducted.
The linear electrode is connected with the middle position of the arc section of the P electrode. Along the diameter direction of the concentric rings, the linear electrode extends from the inner ring of the P electrode to SiO through the outer ring of the P electrode2Insulating the pad surface and linear electrodes on each SiO2The surface ends of the insulating pads 2-1 to 2-4 are respectively provided with P electrode pads 3-1 to 3-4.
The arc sections of the inner ring and the outer ring of the P electrode, which are arranged in parallel, and the linear electrode connected with the arc sections form independent's' -shaped structures, and as can be seen from the figure 1-2, the whole P electrode is formed by four independent's' -shaped structures. The four P-type electrode arc sections are uniformly distributed on the P-type semiconductor layer from inside to outside in an annular mode, and the uniformity of the injection current of the active region is improved. And the four electrode arc sections simultaneously and independently work, the response rate of the device is greatly improved, the transmission rate of the system is improved at a high corresponding rate, and the visible light communication capacity is improved.
The N electrode 6 is of an annular structure on the whole and is arranged on the surface of the N-type semiconductor layer, the annular radius of the N electrode is larger than that of the outer ring 1 of the P electrode, the N electrode 6 comprises four sections of N electrode arc sections 6-1 to 6-4 which are uniformly distributed, and SiO is arranged between two adjacent N electrode arc sections2The insulating pads are separated, and the N electrode arc sections are not conducted. And an N electrode bonding pad is arranged in the middle of each N electrode arc section.
According to the special P-type electrode structure, the P-type layer is isolated into a plurality of approximately independent different areas, each area can be approximately an independent current-limited aperture, the aperture limits a current flow path, junction capacitance can be reduced, response speed can be improved, and therefore the effect of further improving the transmission speed of a system is achieved, and visible light communication capacity is improved.
The invention also discloses a preparation method for the multi-electrode-based lighting communication device, which comprises the following steps:
a. an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer are sequentially deposited on a traditional sapphire substrate.
b. And carrying out a photoetching process on the grown epitaxial wafer, and sequentially forming an N-type semiconductor table top and a table top comprising a multi-quantum well layer and a P-type semiconductor through the photoetching process.
And transferring the preset pattern on the photoetching plate to the epitaxial wafer by using an ICP (inductively coupled plasma) dry etching technology after each photoetching.
c. Deposition of SiO2An insulating pad. Specifically, SiO is deposited to the mesa of the N-type semiconductor layer along the side wall of the mesa of the P-type semiconductor layer2Insulating pad, SiO2The number of the insulating pads is 4, and the included angle between two adjacent insulating pads is 90 degrees and SiO2The shape of the insulating pad is the shape of the preset electrode pad, and can be round, square or rectangular. In this example, SiO2The insulating pad is rectangular in shape.
d. Evaporating a P-type electrode, namely evaporating a P electrode with two concentric ring structures on the surface of a P-type semiconductor layer, wherein the two concentric rings are connected through four linear electrodes, the two concentric rings are respectively crossed with the linear electrodes, and the linear electrodes penetrate through an electrode outer ring from an electrode inner ring along the diameter direction of the rings and extend to SiO2An insulating pad. In a linear electrode on SiO2The end point on the insulating pad is coated with the vapor deposition bonding pad structure, and the included angle between two adjacent linear electrodes is 90 degrees.
And then etching the inner ring and the outer ring of the P-type electrode to form four uniformly distributed parts, wherein the adjacent parts are not communicated with each other. Each part is provided with a linear electrode, and the linear electrode is positioned at the midline of each part.
e. Evaporating N-type electrode, evaporating four bonding pads and four-segment arc N-type electrode on the surface of the N-type semiconductor layer table, wherein SiO is arranged between the adjacent N-type electrodes2The insulating pads are separated from each other. The four arc-shaped N-type electrodes form a circle of non-conductive round N-type electrode.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (8)
1. The multi-electrode-based illumination communication device comprises an N-type semiconductor layer, a multi-quantum well layer, an N electrode, a P-type semiconductor layer and a P electrode from bottom to top in sequence, wherein the N electrode is positioned on the surface of the N-type semiconductor layer, and the P electrode is positioned on the surface of the P-type semiconductor layer2An insulating pad adjacent to two of the SiO2The included angle between the insulating pads is 90 degrees; the P electrode comprises a P electrode inner ring, a P electrode outer ring and a linear electrode, the P electrode inner ring and the P electrode outer ring are concentric circular rings, and the linear electrode extends to the SiO from the P electrode inner ring to the P electrode outer ring along the diameter direction of the circular rings2The insulating pad, the said P electrode inner ring and the said P electrode outer ring are formed by four sections of P electrode arc sections distributed evenly; the N electrode comprises four N electrode arc sections, and the SiO layer is arranged between two adjacent N electrode arc sections2Insulating pad separation;
the P electrode inner ring, the corresponding P electrode arc sections of the P electrode outer ring and the corresponding linear electrodes form four independent ' Chinese character ' ji ' shaped structures;
the N electrode is annular, and the annular radius of the N electrode is larger than the outer ring radius of the P electrode.
2. The lighting communication device of claim 1, wherein the linear electrode is located on the SiO2One end of the insulating pad is provided with a P electrode pad.
3. The lighting communication device as defined in claim 1 or 2, wherein an N electrode pad is disposed on the N electrode arc segment.
4. The illuminated communication device according to claim 3, wherein the N-electrode pad is disposed at a middle position of the N-electrode arc.
5. The illuminated communication device according to claim 1, wherein the linear electrode connects the middle positions of the P-electrode arc segments.
6. A method of making an illuminated communication device, comprising the steps of:
depositing an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer on a substrate to form an epitaxial wafer;
sequentially forming an N-type semiconductor table top and a table top comprising a multi-quantum well layer and a P-type semiconductor on the epitaxial wafer by adopting a photoetching process;
deposition of SiO2An insulating pad for depositing SiO of a predetermined shape to the mesa of the N-type semiconductor along the sidewall of the mesa including the MQW layer and the P-type semiconductor2An insulating pad;
evaporating a P electrode on the P-type semiconductor layer, wherein the P electrode comprises a P electrode inner ring, a P electrode outer ring and four linear electrodes which are of two concentric ring structures, the linear electrodes are crossed with the P electrode inner ring and the P electrode outer ring, an included angle between two adjacent linear electrodes is 90 degrees, and one end of each linear electrode extends to the SiO2An insulating pad;
etching the P electrode, and etching the inner ring of the P electrode and the outer ring of the P electrode into four parts which are uniformly distributed along an angular bisector of an included angle formed by every two adjacent linear electrodes, wherein the four parts are not communicated with each other;
evaporating an N electrode, and evaporating an annular N electrode on the N-type semiconductor table board;
and etching the N-type electrode to form four uniformly distributed parts which are not mutually communicated.
7. The method of claim 6, wherein the step of evaporating the P electrode further comprises forming a linear electrode adjacent to the SiO2And an end part of one side of the insulating pad is plated with a bonding pad structure by evaporation.
8. The method according to claim 6, wherein the step of evaporating N electrodes further comprises evaporating four bonding pads, and the bonding pads are respectively located at the middle positions of the N electrodes.
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