CN110911535A - Visible light communication device based on branched annular electrode and preparation method thereof - Google Patents
Visible light communication device based on branched annular electrode and preparation method thereof Download PDFInfo
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- 238000004891 communication Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052681 coesite Inorganic materials 0.000 claims description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052682 stishovite Inorganic materials 0.000 claims description 12
- 229910052905 tridymite Inorganic materials 0.000 claims description 12
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 7
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 abstract description 3
- 238000005286 illumination Methods 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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Abstract
The invention relates to a visible light communication device based on a branch-shaped annular surrounding electrode and a preparation method thereof, wherein the visible light communication device comprises a substrate, an N-type layer, an active layer and a P-type layer which are sequentially stacked, and further comprises an N electrode, a P electrode, an anode and a cathode, wherein the N electrode comprises an N main branch electrode extending from the cathode and an N branch-shaped annular surrounding electrode branching from the N main branch electrode; the P electrode comprises a P main branch electrode extending from the positive electrode and a P branch annular surrounding electrode branching from the P main branch electrode; the N main branch electrodes and the P main branch electrodes extend to form the same straight line on the projection surface, and the N branch annular surrounding electrodes and the P branch annular surrounding electrodes are arranged on the projection surface at intervals. The electrode enables current to be conducted in the transverse direction better, current distribution uniformity is improved, current injection points are increased, the injection rate of current carriers is improved, luminous efficiency is increased accordingly, the response speed of the device is higher, and meanwhile the requirements of communication and illumination are met.
Description
Technical Field
The invention relates to the field of visible light communication, in particular to a visible light communication device based on a branched annular surrounding electrode and a preparation method thereof.
Background
The development of visible light communication devices is not independent of the popularization and industrial upgrading of LEDs, and white light LEDs are the core group part of a visible light communication system and must have high response speed, uniform brightness, sufficient light extraction efficiency and considerable stability to enable the whole system to work and operate normally. Different types of information sources are input in a digital form of binary bit streams, and are based on '1' and '0', and after the signals are subjected to pre-equalization and code modulation, the signals can drive the LED to emit light and carry out light intensity modulation, so that electric signals in the information sources are converted into light signals with high-speed bright and dark flicker. The visible light wave bands carrying the data information can be converted into electric signals again through photoelectric conversion in the visible light detector, the amplified electric signals are restored into an initial information source after information processing processes such as digital demodulation, channel decoding and the like, and finally the initial information source is displayed on a display device of the communication terminal.
The LED device has good linear input-output relation, and has linear response to visible light signals. At present, the common single-chip LED usually adopts the most common opaque circular electrode structure, the current of which is mainly concentrated in the local area right below the circular electrode, and the electrode has a certain distance to the active area, and reaches the active area when the current is not fully spread laterally, i.e. the light emitting area in the active area is mainly concentrated in the partial local active area below the electrode, i.e. the so-called current crowding effect. Therefore, the electrode structure of the LED chip greatly affects the current uniform spreading condition of the LED chip, and improving the electrode structure is very important for reducing the local current accumulation phenomenon.
Disclosure of Invention
Aiming at the technical problems in the prior art, the invention mainly aims to provide a visible light communication device based on a branched annular electrode and a preparation method thereof. Based on the purpose, the invention at least provides the following technical scheme:
the visible light communication device comprises a substrate, an N-type GaN layer, an active layer, a P-type GaN layer, an N electrode, a P electrode, an anode and a cathode, wherein the N-type GaN layer is arranged on the substrate, the active layer is arranged on the N-type GaN layer, the P-type GaN layer is arranged on the active layer, the N electrode is arranged on the surface of the N-type GaN layer, the P electrode is arranged on the surface of the P-type GaN layer, the anode is connected with the P electrode, the cathode is connected with the N electrode, and the N electrode comprises an N main branch electrode extending from the cathode and an N branch annular embracing electrode branching from the N main branch electrode; the P electrode comprises a P main branch electrode extending from the positive electrode and a P branch annular surrounding electrode branching from the P main branch electrode; the N main branch electrodes and the P main branch electrodes extend to form the same straight line on the projection surface, and the N branch annular holding electrodes and the P branch annular holding electrodes are arranged on the projection surface at intervals.
Preferably, the N-branch-shaped encircling electrode and the P-branch-shaped encircling electrode are concentric circular rings on the projection surface, the concentric circular rings are provided with gaps, the N main branch electrode is positioned in the gap of the P-branch-shaped encircling electrode, and the P main branch electrode is positioned in the gap of the N-branch-shaped encircling electrode.
Preferably, the N main branch electrodes and the P main branch electrodes are located on the same straight line on the orthographic projection plane.
Preferably, one end of the P main branch electrode is a positive electrode, and the other end of the P main branch electrode is a branch-shaped encircling electrode.
Preferably, one end of the N main branch electrode is a negative electrode, and the other end of the N main branch electrode is a branch-shaped encircling electrode.
Preferably, an open slot is formed in the active layer and the P-type GaN layer, and the N electrode is located in the open slot.
Preferably, SiO is provided on the substrate2An insulating layer, the positive electrode is arranged on the SiO2On the insulating layer.
Preferably, the number of the N-branch-shaped encircling electrodes is an even number, and the number of the P-branch-shaped encircling electrodes is an odd number.
Preferably, the material of the N electrode and the P electrode is aluminum copper alloy.
The preparation method of the visible light communication device based on the branched annular surrounding electrode comprises the following steps:
depositing an epitaxial structure comprising an N-type GaN layer, an active layer and a P-type GaN layer on a substrate by adopting an MOCVD method;
etching the epitaxial structure to form an N-type GaN platform, forming an annular opening groove in the active layer and the P-type GaN layer, wherein one end of the annular opening groove is not communicated, and the opposite end which is not communicated with the opening groove is etched with a linear opening groove;
deposition of SiO2An insulating mesa of SiO2The insulating table top is flush with the P-type GaN layer;
evaporating N electrodes in the opening grooves and simultaneously evaporating P electrodes on the P-type GaN, wherein the P electrodes comprise branched P electrodes positioned between the opening grooves in the projection direction and extending to the SiO2A table-board.
Compared with the prior art, the invention has at least the following beneficial effects:
the visible light communication device adopts the branch-shaped P electrode and the N electrode and is in an encircling shape, so that the current is better conducted in the transverse direction, and the current distribution uniformity is improved; the use of the aluminum-copper alloy electrode effectively prevents the electromigration of aluminum, simultaneously improves the stability of the chip, and in addition, the P-type and N-type electrodes which are respectively positioned on the upper layer and the lower layer of the device improve the injection rate of current carriers due to the increase of current injection points, so that the recombination rate of corresponding electron hole pairs is also well improved, the luminous efficiency is also increased, the response speed of the device is higher, and meanwhile, the requirements of communication and illumination are met.
Drawings
Fig. 1 is a schematic cross-sectional view of a branched surrounding electrode-based visible light communication device of the present invention.
Fig. 2 is a top view of the visible light communication device based on the branched surrounding electrode.
Fig. 3 is a schematic perspective view of a visible light communication device based on an annular electrode in a branched shape.
Reference numerals:
1. substrate, 2 buffer layer, 3N-type GaN, 4N electrode, 5 active region, 6P-type GaN, 7P electrode, 8 positive electrode，9、SiO2Insulating layer, 10, negative electrode.
Detailed Description
The present invention will be described in further detail below.
As shown in fig. 1 to 3, the visible light communication device based on the annular electrode in a branched shape of the present invention includes a substrate 1, a buffer layer 2, an N-type GaN layer 3, an active layer, a P-type GaN layer 6, an N-electrode 4, and a P-electrode 7, which are sequentially stacked. The buffer layer 2 is arranged on the substrate 1, the N-type GaN layer is arranged on the buffer layer, the active layer is arranged on the N-type GaN layer, the P-type layer is arranged on the active layer, the N electrode is arranged on the surface of the N-type GaN, and the P electrode is arranged on the surface of the P-type GaN. The P electrode and the N electrode are made of aluminum-copper alloy. The use of the aluminum-copper alloy can obviously improve the current resistance of the electrode, effectively prevent the electromigration of aluminum and effectively improve the stability of a device. In this embodiment, the substrate is preferably a sapphire substrate.
And the active layer and the P-type GaN layer are provided with through opening grooves, the opening grooves expose the surface of the N-type GaN, and the N electrode is arranged in the opening grooves and is in contact with the N-type GaN.
The N-type electrode includes a negative electrode 10, N main branch electrodes extending from the negative electrode 10, and N branch-shaped hoop electrodes branching from the N main branch electrodes, the number of the N branch-shaped hoop electrodes is an even number, in this embodiment, the number of the N branch-shaped hoop electrodes is 2, the N branch-shaped hoop electrodes are circular, a notch is disposed on the N branch-shaped hoop electrode, and a connecting line between an intersection point position (i.e., a branching point) of the N branch-shaped hoop electrode and the N main branch electrodes and a position of the notch forms a diameter of a circular ring, as shown in fig. 1. The thickness of the N electrode and the P electrode was set to 20 nm. The aluminum-copper alloy with the thickness has extremely high light transmittance, and the light-emitting rate of the whole device is ensured.
The P electrode includes an anode 8, a P main branch electrode extending from the anode 8, and a P branch hoop electrode branching from the P main branch electrode, the number of the P branch hoop electrodes is an even number, in this embodiment, the number of the P branch hoop electrodes is 3, the P branch hoop electrode is circular, a notch is arranged on the P branch hoop electrode, and a connecting line between an intersection point position (i.e., a branching point) of the P branch hoop electrode and the P main branch electrode and a position of the notch forms a diameter of a circular ring, as shown in fig. 1.
As can be seen from fig. 1, the N-branch annular surrounding electrode and the P-branch annular surrounding electrode are concentrically arranged at intervals on the projection plane. And the N main branch electrodes and the P main branch electrodes are positioned on the same straight line on the projection plane, one end of each N main branch electrode is a disc-shaped electrode which is positioned at the center of the circular ring, and the other end of each N main branch electrode is a negative electrode 10. One end of the P main branch electrode is an anode 8, and the other end of the P main branch electrode is a P branch annular electrode with the smallest diameter.
SiO is arranged on the surface of the buffer layer2Insulating layer of SiO2The shape of the insulating layer is similar to that of the positive electrode 8, and the positive electrode 8 is provided on SiO2On the insulating layer.
Therefore, the P electrode and the N electrode are respectively arranged in a branch shape and form an encircling shape, so that the current can be better conducted in the transverse direction, the uniformity of current distribution is improved, injection points of the P type electrode and the N type electrode which are positioned on the upper layer and the lower layer of the device are increased, the injection rate of current carriers is improved, the recombination rate of electron holes is also improved, the luminous efficiency is also improved, the response speed of the device is higher, and meanwhile, the requirements of communication and illumination are met.
Based on the visible light communication device, the invention also discloses a preparation method of the visible light communication device based on the branched annular surrounding electrode, which comprises the following steps:
firstly, growing a GaN epitaxial structure on a sapphire substrate by using a Metal Organic Chemical Vapor Deposition (MOCVD) method; then, an n-type GaN platform and a dendritic multi-ring (exemplified by 3-ring) region where the n-electrode 4 is located are etched on the epitaxial structure by using SiO2Depositing, filling and reserving an insulating mesa (the insulating mesa is flush with the p-type GaN layer) required by the p-electrode 7 extending to the anode 82The deposition of the insulating table top can avoid the phenomenon of short circuit and electric leakage when a P electrode is evaporated; then, electron beam evaporation aluminum-copper alloy is adopted as an N-type electrode and a P-type electrode, the branch-shaped P electrode extends to the anode 8, and the branch-shaped N electrode extends to the cathode 10. The complete device as shown in fig. 3 can be obtained from this step.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. A visible light communication device based on a branched annular electrode comprises a substrate, an N-type GaN layer, an active layer, a P-type GaN layer, an N electrode, a P electrode, an anode and a cathode, wherein the N-type GaN layer is arranged on the substrate, the active layer is arranged on the N-type GaN layer, the P-type GaN layer is arranged on the active layer, the N electrode is arranged on the surface of the N-type GaN layer, the P electrode is arranged on the surface of the P-type GaN layer, the anode is connected with the P electrode, and the cathode is connected with the N electrode,
the N electrode comprises an N main branch electrode extending from the negative electrode and an N branch annular surrounding electrode branching from the N main branch electrode;
the P electrode comprises a P main branch electrode extending from the positive electrode and a P branch annular surrounding electrode branching from the P main branch electrode;
the N main branch electrodes and the P main branch electrodes extend to form the same straight line on the projection surface, and the N branch annular holding electrodes and the P branch annular holding electrodes are arranged on the projection surface at intervals.
2. The visible light communication device according to claim 1, wherein the N-branch-shaped surrounding electrode and the P-branch-shaped surrounding electrode are concentric rings on a projection surface thereof, the concentric rings have notches, the N main branch electrode is located in the notch of the P-branch-shaped surrounding electrode, and the P main branch electrode is located in the notch of the N-branch-shaped surrounding electrode.
3. The device according to claim 1, wherein said N main branch electrodes and said P main branch electrodes are located on a same straight line on an orthographic projection plane.
4. Visible light communication device according to one of claims 1 to 3, wherein said P main branch electrode has one end being a positive electrode (8) and the other end being an encircling branch electrode.
5. Visible light communication device according to one of claims 1 to 3, wherein one end of said N main branch electrodes is a negative electrode (10) and the other end is a branch-shaped surrounding electrode.
6. The visible light communication device according to any one of claims 1 to 3, wherein an open groove is provided in the active layer and the P-type GaN layer, and the N-electrode is located in the open groove.
7. The visible light communication device according to claim 5, wherein SiO is provided on the substrate2An insulating layer, the positive electrode (8) being disposed on the SiO2On the insulating layer.
8. The visible light communication device according to any one of claims 1 to 3, wherein the number of the N-branch loop electrodes is an even number, and the number of the P-branch loop electrodes is an odd number.
9. The device according to claim 8, wherein the material of the N-electrode and the P-electrode is an aluminum-copper alloy.
10. The preparation method of the visible light communication device based on the branched annular surrounding electrode comprises the following steps:
depositing an epitaxial structure comprising an N-type GaN layer, an active layer and a P-type GaN layer on a substrate by adopting an MOCVD method;
etching the epitaxial structure to form an N-type GaN platform, forming an annular opening groove in the active layer and the P-type GaN layer, wherein one end of the annular opening groove is not communicated, and the opposite end which is not communicated with the opening groove is etched with a linear opening groove;
deposition of SiO2An insulating mesa of SiO2The insulating mesa is flush with the P-type GaN layerFlattening;
evaporating N electrodes in the opening grooves and simultaneously evaporating P electrodes on the P-type GaN, wherein the P electrodes comprise branched P electrodes positioned between the opening grooves in the projection direction and extending to the SiO2A table-board.
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2019
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Patent Citations (10)
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| US5744828A (en) * | 1995-07-13 | 1998-04-28 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device with blocking layer |
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