CN111072069B - 一种制备可见光响应的2d二硫化铼的方法及应用 - Google Patents
一种制备可见光响应的2d二硫化铼的方法及应用 Download PDFInfo
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- USWJSZNKYVUTIE-UHFFFAOYSA-N bis(sulfanylidene)rhenium Chemical compound S=[Re]=S USWJSZNKYVUTIE-UHFFFAOYSA-N 0.000 title claims abstract description 67
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 51
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000001035 drying Methods 0.000 claims abstract description 16
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 13
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims abstract description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims abstract description 12
- 229910052979 sodium sulfide Inorganic materials 0.000 claims abstract description 12
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 claims abstract description 12
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 10
- 239000011593 sulfur Substances 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 230000035484 reaction time Effects 0.000 claims abstract description 3
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- IQFVPQOLBLOTPF-HKXUKFGYSA-L congo red Chemical compound [Na+].[Na+].C1=CC=CC2=C(N)C(/N=N/C3=CC=C(C=C3)C3=CC=C(C=C3)/N=N/C3=C(C4=CC=CC=C4C(=C3)S([O-])(=O)=O)N)=CC(S([O-])(=O)=O)=C21 IQFVPQOLBLOTPF-HKXUKFGYSA-L 0.000 claims description 10
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- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 4
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- -1 transition metal chalcogenides Chemical class 0.000 description 4
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 4
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
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- 125000002490 anilino group Chemical group [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- DOMWDDGKVOOLGM-UHFFFAOYSA-N azane;1,1'-biphenyl Chemical compound N.C1=CC=CC=C1C1=CC=CC=C1 DOMWDDGKVOOLGM-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033558 biomineral tissue development Effects 0.000 description 1
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- 230000000593 degrading effect Effects 0.000 description 1
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- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
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- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
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- MHRLWUPLSHYLOK-UHFFFAOYSA-N thiomorpholine-3,5-dicarboxylic acid Chemical compound OC(=O)C1CSCC(C(O)=O)N1 MHRLWUPLSHYLOK-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种制备可见光响应的2D二硫化铼(ReS2)的方法及应用,属于新型纳米材料制备领域。本发明以高铼酸铵为铼源,硫化钠为硫源,将此两种前驱体溶解于溶剂水中,通过改变反应温度,反应时间,升温速率进行水热合成反应,最后所得产物经过清洗烘干后得到2D二硫化铼。本发明节能环保,操作简单,可重复性好,成本较低,可大批量制备高质量2D二硫化铼。同时,本发明为2D二硫化铼的多领域应用提供了可靠的制备方法。
Description
技术领域
本发明属于新型纳米材料技术领域,具体涉及一种制备可见光响应的二硫化铼半导体材料的方法。
背景技术
二维层状晶体材料,比如石墨烯,过渡金属硫族化合物等,由于具有优良的光电化学性能,因此在材料科学,电子学,光电子学领域迅速发展。2D过渡金属硫族化合物的特性与块状材料不同,其2D材料为直接带隙半导体,由于其独特的性质和在纳米器件的应用价值激发了研究人员的兴趣。近年来,被广泛研究的过渡金属硫族化合物,特别是半导体过渡金属硫族化合物,比如二硫化钼(MoS2)、二硫化钨(WS2)、二硒化钼(MoSe2)等,都是2H晶格结构。
二硫化钼(MoS2)、二硫化钨(WS2)、二硒化钼(MoSe2)等是典型的TMD材料,对于绝大多数TMD材料来说,当其厚度由多层逐渐减薄到单层时,间接带隙到直接带隙的转变是很明显的,因此薄层TMDA材料的光催化效率低是急需解决的技术问题。
发明内容
本部分的目的在于概述本发明的实施例的一些方面以及简要介绍一些较佳实施例。在本部分以及本申请的说明书摘要和发明名称中可能会做些简化或省略以避免使本部分、说明书摘要和发明名称的目的模糊,而这种简化或省略不能用于限制本发明的范围。
鉴于上述的技术缺陷,提出了本发明。
因此,作为本发明其中一个方面,本发明克服现有技术中存在的不足,提供一种制备可见光响应的2D二硫化铼的方法及应用。
为解决上述技术问题,本发明提供了如下技术方案:一种制备可见光响应的2D二硫化铼的方法,其包括,将铼源和硫源溶解,搅拌均匀后加热反应;冷却后清洗、干燥,即得二硫化铼纳米材料。
作为本发明所述的制备可见光响应的2D二硫化铼的方法的优选方案,其中:所述铼源为高铼酸铵,所述硫源为硫化钠,所述清洗后干燥,其清洗剂为水和乙醇,所述溶解其溶剂为水。
作为本发明所述的制备可见光响应的2D二硫化铼的方法的优选方案,其中:所述铼源和所述硫源的质量比为1:(20~50)。
作为本发明所述的制备可见光响应的2D二硫化铼的方法的优选方案,其中:所述搅拌均匀后加热反应,其加热温度为160~200℃,反应时间为12~30h,升温速率为1.5℃~10℃/min。
作为本发明所述的制备可见光响应的2D二硫化铼的方法的优选方案,其中:所述搅拌均匀后加热反应,其加热温度为160~180℃,反应时间为18~30h,升温速率为1.5~4℃/min。
作为本发明所述的制备可见光响应的2D二硫化铼的方法的优选方案,其中:所述冷却为自然冷却至室温。
作为本发明所述的制备可见光响应的2D二硫化铼的方法的优选方案,其中:所述清洗后干燥,其干燥温度为50~70℃。
作为本发明所述的制备可见光响应的2D二硫化铼的方法的优选方案,其中:将高铼酸铵、硫化钠溶解于水中,升温速率为1.5℃/min,加热至160℃,保温24h进行反应,待反应结束,高温反应釜自然冷却至室温,用水和无水乙醇清洗反应产物,并置于60℃下烘燥。
作为本发明其中一个方面,本发明克服现有技术中存在的不足,提供一种制备的2D二硫化铼,其中:制备的二硫化铼具有二维片状结构。
作为本发明其中一个方面,本发明克服现有技术中存在的不足,提供一种制备的2D二硫化铼的应用,其特征在于:在波长>420nm下降解刚果红溶液。
本发明的有益效果:本发明操作重复性好,成本低廉,制备方法简单方便,可大批量制备高质量的二硫化铼纳米材料,本发明为二硫化铼纳米材料在光电化学领域的应用提供了可靠可行的制备方法。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其它的附图。其中:
图1为本发明制备的2D二硫化铼的X射线光电子能谱图。
图2为本发明制备的2D二硫化铼的X射线衍射图。
图3为本发明制备的2D二硫化铼的SEM示意图。
图4为本发明制备的2D二硫化铼的TEM图。
图5为本发明制备的2D二硫化铼的EDS能谱图。
图6为本发明制备的2D二硫化铼的UV-vis示意图。
图7为本发明制备的2D二硫化铼可见光下(λ>420nm)降解刚果红效果图。
图8本发明制备的2D二硫化铼可见光下(λ>420nm)循环使用寿命图。
图9为实施例5制备的二硫化铼SEM示意图。
图10为实施例6制备的二硫化铼SEM示意图。
图11为可见光下刚果红可能性降解途径分析。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合具体实施例对本发明的具体实施方式做详细的说明。
在下面的描述中阐述了很多具体细节以便于充分理解本发明,但是本发明还可以采用其他不同于在此描述的其它方式来实施,本领域技术人员可以在不违背本发明内涵的情况下做类似推广,因此本发明不受下面公开的具体实施例的限制。
其次,此处所称的“一个实施例”或“实施例”是指可包含于本发明至少一个实现方式中的特定特征、结构或特性。在本说明书中不同地方出现的“在一个实施例中”并非均指同一个实施例,也不是单独的或选择性的与其他实施例互相排斥的实施例。
实施例1:
将0.02g高铼酸铵,0.5g硫化钠溶解在10ml去离子水中,搅拌充分得到混合溶液。将上述所得混合溶液转移到高温反应釜中置于马弗炉,升温速率为1.5℃/min,加热至160℃,保温24h进行水热化学反应。待反应结束,高温反应釜自然冷却至室温,用蒸馏水和无水乙醇清洗反应产物,并置于60℃下烘燥,最终得到二硫化铼纳米片材料。
图1为本发明制备的二硫化铼纳米片材料的X射线光电子能谱图,从图(a)可以看出:Re的4f价态在结合能42.2eV,44.6eV,分别对应Re原子的4f7/2轨道和4f5/2轨道;从图(b)中可以看出:S原子的2p3/2和2p1/2轨道对应结合能为162.5eV和163.7eV,因此与二硫化铼纳米材料晶体相对应参数值是一致的。
本发明采用水热制备二硫化铼纳米片材料,它的晶粒尺寸小,分散性较好,得率较高,样品晶型较好,在高温高压下反应物活性更高,可调控性高,简单操作,成本低。另外,本发明采用硫化钠替代硫粉作为硫源,能够减少环境污染的同时降低制备风险。
图2为本发明制备的二硫化铼纳米材料的XRD衍射图,从图2可以看出来本实施例最终合成的产物出现二硫化铼纳米材料的4个XRD衍射峰,分别为(001),(002),(300),(-122),图中可以看出ReS2的峰不是很尖锐,ReS2纳米材料呈无序排列。
图3为本发明制备的2D二硫化铼的SEM示意图,图4是为本发明制备的二硫化铼纳米材料TEM图,图中可以看出ReS2呈薄层分布。
如图7,用该2D二硫化铼材料在可见光下(λ>420nm)降解刚果红,刚果红初始浓度20mg/L,分别测定光照30min,60min,90min,120min,150min,180min时的降解效率,刚果红的降解效率分别是7.7%,23.8%,65.3%,77.9%,89.7%,92.8%。
该2D二硫化铼材料在可见光下催化刚果红的降解途径分为两步:首先是以脱色为主;其次苯环开环,矿化。具体见图11,刚果红受到·OH攻击,偶氮双键断裂,生成产物m/z=239,m/z=93苯胺结构,苯环形成的大共轭体系受到破坏,生成产物m/z=177等,随着反应的持续进行,·OH,O2·-,以空穴的共同作用,芳烃及多芳烃结果受到破坏,生成萘酚及不稳定产物萘磺酸,联苯氨,产物m/z=163,m/z=148,m/z=75等等,这些化合物随着光催化的持续进行,最后被自由基及空穴氧化为有机、无机小分子以及二氧化碳和水。
实施例2:
将0.02g高铼酸铵,0.5g硫化钠溶解在10ml去离子水中,搅拌充分得到混合溶液。将上述所得混合溶液转移到高温反应釜中置于马弗炉,升温速率为4℃/min,加热至180℃,保温20h进行水热化学反应。待反应结束,高温反应釜自然冷却至室温,用蒸馏水和无水乙醇清洗反应产物,并置于60℃下烘燥,最终得到二硫化铼纳米材料。
实施例3:
将0.02g高铼酸铵,0.5g硫化钠溶解在10ml去离子水中,搅拌充分得到混合溶液。将上述所得混合溶液转移到高温反应釜中置于马弗炉,升温速率为5℃/min,加热至180℃,保温24h进行水热化学反应。待反应结束,高温反应釜自然冷却至室温,用蒸馏水和无水乙醇清洗反应产物,并置于60℃下烘燥,最终得到二硫化铼纳米片材料。
实施例4:
将0.02g高铼酸铵,0.5g硫化钠溶解在10ml去离子水中,搅拌充分得到混合溶液。将上述所得混合溶液转移到高温反应釜中置于马弗炉,升温速率为12℃/min,加热至200℃,保温18h进行水热化学反应。待反应结束,高温反应釜自然冷却至室温,用蒸馏水和无水乙醇清洗反应产物,并置于60℃下烘燥,最终得到二硫化铼纳米片材料。
图5为本发明制备的二硫化铼纳米材料的EDS能谱图,只存在铼原子与硫原子,说明产物为二硫化铼纳米材料。升温速率过高(大于10℃)影响二硫化铼成型结构和晶型,制备出来的二硫化铼没有光催化活性。
实施例5:
将0.2g高铼酸铵,0.39g硫化钠溶解在10ml去离子水中,搅拌充分得到混合溶液。将上述所得混合溶液转移到高温反应釜中置于马弗炉,升温速率为3℃/min,加热至140℃,保温14h进行水热化学反应。待反应结束,高温反应釜自然冷却至室温,用蒸馏水和无水乙醇清洗反应产物,并置于60℃下烘燥,最终得到二硫化铼纳米片材料。结合图10的SEM图可以看出,制备的二硫化铼材料并未成型。
实施例6:
将0.536g高铼酸铵,0.5g硫化钠溶解在10ml去离子水中,搅拌充分得到混合溶液。将上述所得混合溶液转移到高温反应釜中置于马弗炉,升温速率为3℃/min,加热至250℃,保温8h进行水热化学反应。待反应结束,高温反应釜自然冷却至室温,用蒸馏水和无水乙醇清洗反应产物,并置于60℃下烘燥,最终得到二硫化铼纳米片材料。结合图10的SEM图可以看出,制备的二硫化铼材料并未成型。
实施例7:
将0.536g高铼酸铵,0.5g硫脲溶解在10ml去离子水中,搅拌充分得到混合溶液。将上述所得混合溶液转移到高温反应釜中置于马弗炉,升温速率为1.5℃/min,加热至160℃,保温24h进行水热化学反应。待反应结束,高温反应釜自然冷却至室温,用蒸馏水和无水乙醇清洗反应产物,并置于60℃下烘燥,最终得到二硫化铼纳米片材料。制备的二硫化铼材料并未成型。
应说明的是,以上实施例仅用以说明本发明的技术方案而非限制,尽管参照较佳实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的精神和范围,其均应涵盖在本发明的权利要求范围当中。
Claims (7)
1.一种制备可见光响应的2D二硫化铼的方法,其特征在于:包括,将铼源和硫源溶解,搅拌均匀后加热反应;冷却后清洗、干燥,即得二硫化铼纳米材料;所述铼源为高铼酸铵,所述硫源为硫化钠,所述清洗后干燥,其清洗剂为水和乙醇,所述溶解其溶剂为水;所述铼源和所述硫源的质量比为1:(20~50);所述搅拌均匀后加热反应,其加热温度为160~200℃,反应时间为12~30h,升温速率为1.5℃~10℃/min。
2.如权利要求1所述的制备可见光响应的2D二硫化铼的方法,其特征在于:所述搅拌均匀后加热反应,其加热温度为160~180℃,反应时间为18~30h,升温速率为1.5~4℃/min。
3.如权利要求1中所述的制备可见光响应的2D二硫化铼的方法,其特征在于:所述冷却为自然冷却至室温。
4.如权利要求1或3中所述的制备可见光响应的2D二硫化铼的方法,其特征在于:所述清洗后干燥,其干燥温度为50~70℃。
5.如权利要求1或3中所述的制备可见光响应的2D二硫化铼的方法,其特征在于:将高铼酸铵、硫化钠溶解于水中,升温速率为1.5℃/min,加热至160℃,保温24h进行反应,待反应结束,高温反应釜自然冷却至室温,用水和无水乙醇清洗反应产物,并置于60℃下烘燥。
6.用权利要求1~4中任一所述制备可见光响应的2D二硫化铼的方法制备的2D二硫化铼,其特征在于:制备的二硫化铼具有二维片状结构。
7.权利要求1~4中任一所述制备可见光响应的2D二硫化铼的方法制备的2D二硫化铼的应用,其特征在于:在波长>420nm下降解刚果红溶液。
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