CN111064445B - Anti-irradiation differential output oscillation chip - Google Patents
Anti-irradiation differential output oscillation chip Download PDFInfo
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- 230000010355 oscillation Effects 0.000 title claims abstract description 50
- 239000003990 capacitor Substances 0.000 claims abstract description 11
- 239000010453 quartz Substances 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 238000013461 design Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 5
- 230000005855 radiation Effects 0.000 abstract description 25
- 239000013078 crystal Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000003471 anti-radiation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 230000008054 signal transmission Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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Abstract
The application discloses an anti-irradiation differential oscillation chip which comprises an oscillation starting module, a power supply module, a phase-locked loop module, a digital logic module and an output module; the oscillation starting module comprises a quartz oscillator and generates a fundamental frequency oscillation signal; the power supply module is used for supplying power to other modules; the phase-locked loop module is used for phase locking and frequency doubling the fundamental frequency oscillation signal to generate a high-frequency signal; the digital logic module is used for generating a control signal to control the frequency multiplication multiple of the phase-locked loop module; the output module is used for converting the high-frequency signal into a square wave of differential output; the resistor in the crystal oscillator module is a polycrystalline resistor, and the capacitor is a metal capacitor; the power supply module is a diode structure circuit; the chip is designed by adopting a CMOS, and an MOS tube is provided with an anti-irradiation isolating ring. The application meets the requirement of the differential crystal oscillator for the spacecraft in the aspect of radiation resistance.
Description
Technical Field
The application relates to the technical field of semiconductor circuits, in particular to an anti-irradiation differential output oscillation chip.
Background
With the wide application of the differential crystal oscillator for the spacecraft, higher requirements are provided for the differential crystal oscillator in the aspects of radiation resistance, high frequency and the like, and the indexes of radiation resistance, frequency and the like of the differential crystal oscillator depend on the performance of a differential output oscillation chip, so that the aspects of radiation resistance and the like of the differential output oscillation chip need to be designed, the radiation resistance and high index characteristics of the differential output oscillation chip are realized, and the relevant requirements of electronic equipment in the spacecraft are met.
The traditional differential output oscillation chip adopts common CMOS design and process, has poor irradiation resistance, and cannot meet the requirement of the differential crystal oscillator for the spacecraft on irradiation resistance.
Disclosure of Invention
The application provides an anti-irradiation differential output oscillation chip, solves the poor problem of differential output oscillation chip anti-irradiation ability of prior art.
The embodiment of the application provides an anti-irradiation differential oscillation chip, includes: the device comprises a vibration starting module, a power supply module, a phase-locked loop module, a digital logic module and an output module; the oscillation starting module comprises a quartz oscillator and generates a fundamental frequency oscillation signal; the power supply module is used for supplying power to other modules; the phase-locked loop module is used for phase locking and frequency doubling the fundamental frequency oscillation signal to generate a high-frequency signal; the digital logic module is used for generating a control signal to control the frequency multiplication multiple of the phase-locked loop module; the output module is used for converting the high-frequency signal into a square wave of differential output; the resistor in the crystal oscillator module is a polycrystalline resistor, and the capacitor is a metal capacitor; the power supply module is a diode structure circuit; the chip is designed by adopting a CMOS, and an MOS tube is provided with an anti-irradiation isolating ring.
Preferably, the distribution of each of the modules on the substrate is: the power supply module is positioned between the oscillation starting module and the phase-locked loop module; the digital logic module is adjacent to the power supply module and the phase-locked loop module; the phase-locked loop module is adjacent to the output module.
Preferably, the oscillation starting module is connected with the quartz oscillator through a bonding region; and the phase-locked loop module is connected with the chip through an internal aluminum wire of the chip. The power module is connected with other modules through an aluminum wire in the chip; the power supply is connected with an external power supply through the bonding area; the ground terminal is connected to an external ground through a bonding region. The control signal output by the digital logic module is connected with an external control end through a bonding area, and the control signal generated by the digital logic module is input to the phase-locked loop module. The input end of the output module is connected with the output end of the phase-locked loop module through an internal aluminum wire of the chip;
the output end of the output module is connected with an external output port through a bonding area.
Further preferably, the operational amplifier circuit in the phase-locked loop module is symmetrically designed; the phase-locked loop module comprises a negative feedback circuit structure and a multi-mode redundancy structure, and control signals at the same level are distributed on two sides of the circuit.
Further preferably, the output differential port of the output module is symmetrically designed; the output pipe adopts a double-isolation ring design.
Further preferably, the phase-locked loop module includes a VCO, a prescaler circuit, a phase detector, and a loop filter; the VCO is located at one end of the phase-locked loop module far away from the power supply module and adjacent to the output module.
Further preferably, the digital logic module comprises a decoder and an array switch; the decoder controls the array switch through 4 ports to form a 16-bit control signal.
The embodiment of the application adopts at least one technical scheme which can achieve the following beneficial effects:
in order to meet the requirement of a differential crystal oscillator for a spacecraft on radiation resistance, a chip must be designed on the aspects of radiation resistance and high index, the radiation resistance of the chip is optimized by adopting the radiation resistance design and reinforcement of an internal MOS tube and adopting the radiation resistance BCD process, and the total dose radiation resistance of the chip is more than 300krad (Si).
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a pictorial representation of an embodiment of the present application;
fig. 2 is a schematic diagram of a position and a connection relationship in an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail and completely with reference to the following specific embodiments of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The technical solutions provided by the embodiments of the present application are described in detail below with reference to the accompanying drawings.
FIG. 1 is a pictorial representation of an embodiment of the present application.
The anti-radiation differential output oscillation chip comprises: a start-up module 101, a power module 102, a phase-locked loop module 103, a digital logic module 104, and an output module 105.
The oscillation starting module comprises a quartz oscillator and generates a fundamental frequency oscillation signal. The output signal of the oscillation starting module is connected with the quartz oscillator through the bonding region 106, and the input signal is connected with the input of the phase-locked loop module 103 through an aluminum wire in the chip.
The phase-locked loop module is used for phase locking and frequency doubling the fundamental frequency oscillation signal to generate a high-frequency signal. The input signal of the pll module 103 is provided by the oscillation starting module 101, and the output signal is connected to the input of the output module 105 through the aluminum wire inside the chip.
And the digital logic module is used for generating a control signal to control the frequency multiplication multiple of the phase-locked loop module. The control signal of the digital logic module is connected with an external control end through a bonding area, and the control signal generated by the digital logic module 104 is input to the phase-locked loop module.
And the power supply module is used for supplying power to other modules. The power module is connected with each functional module of the chip through an aluminum wire in the chip, and a power supply and a ground end are connected with an external power supply and a ground through a bonding area.
And the output module is used for converting the high-frequency signal into a square wave of differential output. The output signal of the output module passes through the bonding area and an external output port, and the input signal is connected with the output of the phase-locked loop module through an internal aluminum wire of the chip.
The bonding region 106 is located around the chip.
In order to improve the radiation resistance, the resistor in the crystal oscillator module is a polycrystalline resistor, and the capacitor is a metal capacitor. The power module is a diode structure circuit. The chip is designed by adopting a CMOS, and an MOS tube is provided with an anti-irradiation isolating ring.
In order to further improve the radiation resistance. Further preferably, the operational amplifier circuit in the phase-locked loop module is symmetrically designed; the phase-locked loop module comprises a negative feedback circuit structure and a multi-mode redundancy structure, and control signals at the same level are distributed on two sides of the circuit. The multimode redundancy structure is that the level of the output end is voted and selected through the same logic structure at the logic output end, so that the single event upset resistance of the product is improved.
Further preferably, the output differential port of the output module is symmetrically designed; the CMOS tube of the output circuit adopts a double-isolation ring design.
Furthermore, in order to improve the radiation resistance, the modules are designed by using radiation resistance reinforcing devices, further, the layout and wiring are adjusted according to the functional difference of the modules, the wiring length is prolonged, and specifically, the signal transmission distance is increased in at least one mode of turning, walking an arc line and bypassing a redundant area, so that the radiation resistance of the chip is improved.
The anti-radiation differential output oscillation chip of the embodiment has the external dimensions of length × width × height (2.0mm ± 0.1mm) × (1.6mm ± 0.1mm) × (0.3mm (max)), the total dose radiation resistance of the chip is greater than 300krad (si), the output frequency can reach 400MHz at most, and the output waveform can be selected from LVDS or LVPECL square waves.
Fig. 2 is a schematic diagram of a position and a connection relationship in an embodiment of the present application.
The distribution positions of the modules on the substrate are as follows: the power supply module is positioned between the oscillation starting module and the phase-locked loop module; the digital logic module is adjacent to the power supply module and the phase-locked loop module; the phase-locked loop module is adjacent to the output module. The connection of the parts in fig. 2 is a schematic connection relationship, and the actual position of the connection line is connected with an aluminum wire or a bonding area inside the chip.
The oscillation starting module 101 is used for generating an oscillation signal of a fundamental frequency in cooperation with the quartz oscillator, and needs to be isolated from other modules because the power supply is independent and the oscillation signal is the oscillation signal, so that the whole module is separately placed at the leftmost upper corner in order to avoid signal interference. In order to improve the radiation resistance, for example, the oscillation starting module uses a large-size polycrystalline resistor and a metal capacitor with the length-width ratio of 1:1, so that parasitic leakage generated after irradiation of the trap resistor and the polycrystalline capacitor is reduced, and meanwhile, the large-size resistor and the large-size capacitor can also reduce signal jitter and turnover errors caused by irradiation.
The power module 102 is used to supply power to each module of the chip. The power supply and the ground end are connected with the external power supply and the ground through the bonding area and are connected with each functional module of the chip through the internal aluminum wire of the chip, the power supply and the ground end comprise a current source and a voltage source, the power supply module requires low noise and cannot be influenced by other modules, so the power supply module is placed in the middle of the layout at the left part and is positioned in the middle of the phase-locked loop module and the oscillation starting module, the power supply aluminum wire and the offset signal wire can be directly conveyed to each module without passing through other modules, the interference of other modules to power supply offset is reduced, and the phase noise index of the chip is improved. In order to improve the anti-irradiation capability, for example, the power module adopts a diode circuit structure to eliminate the low dose rate irradiation effect brought by a Bipolar device of a triode circuit; the reference source adopts the design of symmetrical structure, adds the spacer ring to single MOS pipe simultaneously, makes the heavy end fully contact, improves device stability, reduces the parasitic electric leakage of substrate after the irradiation, promotes the radiation resistance ability.
The phase-locked loop module 103 is configured to perform phase-locked frequency multiplication on the oscillation starting frequency to generate a high-frequency signal. The phase-locked loop comprises a VCO (voltage controlled oscillator), a pre-frequency dividing circuit, a charge pump, a phase discriminator and other circuits, wherein a VCO module is positioned at the lower right corner of a phase-locked loop module, and a power supply is separated from a start oscillation module; the prescaler circuit block follows the VCO output immediately because it is a continuous signal stream output from the VCO and the smaller the distance between the two, the smaller the error; immediately after the loop filter and charge pump, this part is the complete output of the entire signal stream, so it is considered in the layout to be put together with the VCO and prescaler block. In order to improve the radiation resistance, for example, in the phase-locked loop module, on one hand, the structure of the operational amplifier inside the VCO adopts a symmetrical structural design, so that the mismatch of the operational amplifier caused by the error of the processing technology is reduced, and the precision of the operational amplifier is improved. In the second aspect, the isolation ring is added to a single MOS tube, so that the substrate is fully contacted, the stability of the device is improved, the parasitic electric leakage of the substrate after irradiation is reduced, and the radiation resistance is improved; in the third aspect, a negative feedback circuit structure and a multimode redundancy structure are added in a time sequence loop of a phase-locked frequency multiplication structure, so that control signals at the same level are distributed on two sides of the circuit structure, and the simultaneous turnover is prevented; and in the fourth aspect, the signal trend is adjusted, the signal transmission distance is properly increased in a mode of turning, walking an arc line and bypassing a redundant area, and the signal overturning error caused by irradiation is effectively reduced.
The digital logic block 104 is used to generate a control signal to control the frequency multiplication of the phase-locked loop block. It is composed of decoder, array switch and other circuits. The decoder works with the following array switches. The decoder controls 16 ports of the array switch through 4 ports, and further controls the phase-locked loop circuit. In order to improve the radiation resistance, for example, in a digital logic module, before use, a digital logic gate unit is subjected to radiation test verification to reduce parasitic leakage generated after radiation (optimally, the digital logic gate unit is subjected to multiple radiation test verification).
The output module 105 is used to generate a final output frequency signal. Two different differential square waves of LVDS or LVPECL can be selected through the selection of the connection of the bonding areas with different output waveforms. In order to improve the anti-irradiation capability, for example, the output ports of the output module are symmetrically designed, positive and negative outputs are distributed on two sides, so that the mutual interference among signals is reduced, and meanwhile, the output structure is separated, so that the signal upset error generated by single-particle irradiation is effectively reduced; the output CMOS tube adopts a double isolation ring structure, so that a substrate parasitic structure is eliminated, and the problem of latch-up after irradiation is eliminated.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (8)
1. An irradiation-resistant differential oscillating chip, comprising: the device comprises a starting oscillation module, a power supply module, a phase-locked loop module, a digital logic module and an output module;
the oscillation starting module comprises a quartz oscillator and generates a fundamental frequency oscillation signal;
the power supply module is used for supplying power to other modules;
the phase-locked loop module is used for phase locking and frequency doubling the fundamental frequency oscillation signal to generate a high-frequency signal;
the digital logic module is used for generating a control signal to control the frequency multiplication multiple of the phase-locked loop module; the control signal output by the digital logic module is connected with an external control end through a bonding area, and the control signal generated by the digital logic module is input to the phase-locked loop module;
the output module is used for converting the high-frequency signal into a square wave of differential output;
the resistor in the oscillation starting module is a polycrystalline resistor, and the capacitor is a metal capacitor;
the power supply module is a diode structure circuit;
the chip is designed by adopting a CMOS, wherein an MOS tube is provided with an anti-irradiation isolating ring;
the distribution of the modules on the substrate is as follows: the power supply module is positioned between the oscillation starting module and the phase-locked loop module; the digital logic module is adjacent to the power supply module and the phase-locked loop module; the phase-locked loop module is adjacent to the output module.
2. The differential oscillation chip of claim 1,
the oscillation starting module is connected with the quartz oscillator through the bonding region; and the phase-locked loop module is connected with the chip through an internal aluminum wire of the chip.
3. The differential oscillation chip of claim 1,
the power module is connected with other modules through an aluminum wire in the chip;
the power supply is connected with an external power supply through the bonding area;
the ground terminal is connected to an external ground through a bonding region.
4. The differential oscillation chip of claim 1,
the input end of the output module is connected with the output end of the phase-locked loop module through an internal aluminum wire of the chip;
the output end of the output module is connected with an external output port through a bonding area.
5. The differential oscillation chip of claim 1,
the operational amplifier circuit in the phase-locked loop module is symmetrically designed;
the phase-locked loop module comprises a negative feedback circuit structure and a multi-mode redundancy structure, and control signals at the same level are distributed on two sides of the circuit.
6. The differential oscillation chip of claim 1,
the output differential port of the output module is symmetrically designed; the output pipe adopts a double-isolation ring design.
7. The differential oscillation chip of any one of claims 1 to 6,
the phase-locked loop module comprises a VCO (voltage controlled oscillator), a pre-frequency division circuit, a phase discriminator and a loop filter;
the VCO is located at one end of the phase-locked loop module far away from the power supply module and adjacent to the output module.
8. The differential oscillation chip according to any one of claims 1 to 6,
the digital logic module comprises a decoder and an array switch; the decoder controls the array switch through 4 ports to form a 16-bit control signal.
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Citations (3)
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|---|---|---|---|---|
| EP2237421A1 (en) * | 2009-04-01 | 2010-10-06 | Honeywell International Inc. | Radiation-hardened charge pump topology |
| CN102201785A (en) * | 2010-03-23 | 2011-09-28 | 北京大学 | Ultra-low power consumption voltage-controlled oscillator circuit and signal processing method thereof |
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| US7646254B2 (en) * | 2007-08-30 | 2010-01-12 | Honeywell International Inc. | Radiation hard oscillator and differential circuit design |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2237421A1 (en) * | 2009-04-01 | 2010-10-06 | Honeywell International Inc. | Radiation-hardened charge pump topology |
| CN102201785A (en) * | 2010-03-23 | 2011-09-28 | 北京大学 | Ultra-low power consumption voltage-controlled oscillator circuit and signal processing method thereof |
| CN209358515U (en) * | 2018-12-07 | 2019-09-06 | 北京遥测技术研究所 | A kind of Flouride-resistani acid phesphatase compact dual-frequency band frequency source |
Non-Patent Citations (2)
| Title |
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| 赵振宇等.一款0.18μm CMOS辐射加固差分压控振荡器.《国防科技大学学报》.2009, * |
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