CN111063749B - 一种太阳能电池 - Google Patents

一种太阳能电池 Download PDF

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CN111063749B
CN111063749B CN201911251080.7A CN201911251080A CN111063749B CN 111063749 B CN111063749 B CN 111063749B CN 201911251080 A CN201911251080 A CN 201911251080A CN 111063749 B CN111063749 B CN 111063749B
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solar cell
light
battery body
amorphous silicon
silicon material
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CN111063749A (zh
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王旭东
高俊山
张志伟
曹富贵
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Xuwen Jingneng new energy Co.,Ltd.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开一种太阳能电池，包括电池本体，电池本体为圆锥形状，电池本体从表面到底部开有多个光通道，光通道之间填充有太阳能电池组件，多个太阳能电池组件依次串联。本发明解决了现有技术中存在的现有太阳能电池单位面积内光电转化效率低的问题。

Description

一种太阳能电池
技术领域
本发明属于太阳能电池技术领域，涉及一种太阳能电池。
背景技术
太阳能电池是通过光电效应或者光化学效应直接把光能转化成电能的装置。
电力、煤炭、石油等不可再生能源频频告急，能源问题日益成为制约国际社会经济发展的瓶颈时，越来越多的国家开始实行“阳光计划”，开发太阳能资源，寻求经济发展的新动力。欧洲一些高水平的核研究机构也开始转向可再生能源。在国际光伏市场巨大潜力的推动下，各国的太阳能电池制造业争相投入巨资，扩大生产，以争一席之地。
以光电效应工作的晶硅太阳能电池为主流，现有太阳能电池单位面积内光电转化效率较低。
发明内容
本发明的目的是提供一种太阳能电池，解决了现有技术中存在的现有太阳能电池单位面积内光电转化效率低的问题。
本发明所采用的技术方案是，
一种太阳能电池，包括电池本体，电池本体为圆锥形状，电池本体从表面到底部开有多个光通道，光通道之间填充有太阳能电池组件，多个太阳能电池组件依次串联。
其特点还在于，
电池本体的圆锥角的取值范围为120°～160°。
光通道包括主光通道和副光通道，电池本体的轴向上开有主光通道，电池本体的侧面到底部斜向下开有多个副光通道。
其特征在于，太阳能电池组件的外表面包裹有光吸收层。
太阳能电池组件为多层依次堆叠非晶硅材料层。
非晶硅材料层之间隔有绝缘层，绝缘层上有开孔，开孔被导电材料填充，相邻的非晶硅材料层通过导电材料连接。
本发明的有益效果是
电池本体的形状设置与光通道的设置能够吸收多角度的入射光，增大光吸收面积，非晶硅的太阳能电池组件能吸收波长在200至600纳米的入射光，提高转化率。
附图说明
图1是本发明一种太阳能电池的结构图。
图中，1.主光通道，2.太阳能电池组件，3.副光通道，4.电池本体。
具体实施方式
下面结合附图和具体实施方式对本发明进行详细说明。
本发明一种太阳能电池，如图1，包括电池本体4，电池本体4为圆锥形状，电池本体4从表面到底部开有多个光通道，光通道之间填充有太阳能电池组件2，多个太阳能电池组件2依次串联。
电池本体4的圆锥角的取值范围为120°～160°。
光通道包括主光通道1和副光通道3，电池本体4的轴向上开有主光通道1，电池本体4的侧面到底部斜向下开有多个副光通道3。
太阳能电池组件2的外表面包裹有光吸收层。
太阳能电池组件2为多层依次堆叠非晶硅材料层。
非晶硅材料层之间隔有绝缘层，绝缘层上有开孔，开孔被导电材料填充，相邻的非晶硅材料层通过导电材料连接。
本发明公开的电池具有单位面积内光接触面积大、光电转化效率较高的特点。

Claims (3)

1.一种太阳能电池，其特征在于，包括电池本体(4)，所述电池本体(4)为圆锥形状，所述电池本体(4)从表面到底部开有多个光通道，所述光通道包括主光通道(1)和副光通道(3)，所述电池本体(4)的轴向上开有主光通道(1)，所述电池本体(4)的侧面到底部斜向下开有多个副光通道(3)，所述光通道之间填充有太阳能电池组件(2)，多个所述太阳能电池组件(2)依次串联，所述太阳能电池组件(2)的外表面包裹有光吸收层，所述太阳能电池组件(2)为多层依次堆叠非晶硅材料层。
2.如权利要求1所述的一种太阳能电池，其特征在于，所述电池本体(4)的圆锥角的取值范围为120°～160°。
3.如权利要求1所述的一种太阳能电池，其特征在于，所述非晶硅材料层之间隔有绝缘层，所述绝缘层上有开孔，所述开孔被导电材料填充，相邻的非晶硅材料层通过导电材料连接。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009123779A (ja) * 2007-11-12 2009-06-04 Taichi Tsuboi ドーム型太陽光発電装置、ドーム型太陽熱発電装置、ドーム型太陽光発電システム及びドーム型太陽熱発電システム
CN101681949A (zh) * 2007-05-01 2010-03-24 摩根阳光公司 光导太阳能电池板及其制备方法
CN102194906A (zh) * 2011-04-29 2011-09-21 浙江吉利汽车研究院有限公司 一种太阳能电池板的集成结构
CN202797003U (zh) * 2012-10-15 2013-03-13 衢州逗号工业设计有限公司 一种多面结构光伏发电装置

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US20140190553A1 (en) * 2013-01-10 2014-07-10 Christoph Karl La Due Method and apparatus for generating solarpower

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101681949A (zh) * 2007-05-01 2010-03-24 摩根阳光公司 光导太阳能电池板及其制备方法
JP2009123779A (ja) * 2007-11-12 2009-06-04 Taichi Tsuboi ドーム型太陽光発電装置、ドーム型太陽熱発電装置、ドーム型太陽光発電システム及びドーム型太陽熱発電システム
CN102194906A (zh) * 2011-04-29 2011-09-21 浙江吉利汽车研究院有限公司 一种太阳能电池板的集成结构
CN202797003U (zh) * 2012-10-15 2013-03-13 衢州逗号工业设计有限公司 一种多面结构光伏发电装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Optical Fiber/Nanowire Hybrid Structures for Efficient Three-Dimensional Dye-Sensitized Solar Cells;Benjamin Weintraub et al.;《ANGEWANDTE CHEMIE-INTERNATIONAL EDITION》;20091022;第48卷(第47期);第9143-9147页 *

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