CN111063744A - Solar cell and method for producing a solar cell - Google Patents
Solar cell and method for producing a solar cell Download PDFInfo
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- CN111063744A CN111063744A CN201911371424.8A CN201911371424A CN111063744A CN 111063744 A CN111063744 A CN 111063744A CN 201911371424 A CN201911371424 A CN 201911371424A CN 111063744 A CN111063744 A CN 111063744A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 60
- 238000002161 passivation Methods 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 34
- 230000008878 coupling Effects 0.000 claims abstract description 3
- 238000010168 coupling process Methods 0.000 claims abstract description 3
- 238000005859 coupling reaction Methods 0.000 claims abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 17
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 229910052709 silver Inorganic materials 0.000 description 11
- 239000004332 silver Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 9
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- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Embodiments of the present disclosure relate to a solar cell and a method for manufacturing the solar cell. The solar cell includes: a photoelectric conversion body; a first electrode on a first surface of the photoelectric conversion body; and a second electrode on a second surface of the photoelectric conversion body opposite to the first surface. The second electrode includes: a plurality of conductive contacts on the second surface and in contact with the photoelectric conversion body; and a light-transmitting conductive film electrically coupling the plurality of conductive contacts and at least partially covering the passivation film on the second surface. According to the scheme of the embodiment of the disclosure, the photoelectric conversion efficiency of the solar cell can be effectively improved, and meanwhile, the preparation process is simple and the cost is low.
Description
Technical Field
Embodiments of the present disclosure relate to the field of photovoltaic technology, and more particularly, to solar cells and methods for fabricating solar cells.
Background
A solar cell is a device that absorbs solar radiation and converts light energy into electrical energy using the photovoltaic effect. Due to the characteristics of cleanness, safety, convenience, high efficiency and the like, the energy source system becomes a main configuration of future new energy sources all over the world. Currently, Passivated Emitter Rear Cell (PERC) technology has become the mainstream technology in the solar cell field.
Compared with the traditional solar cell with an all-aluminum back field, the PERC solar cell adopts the aluminum grid lines to replace the all-aluminum back field on the back surface, so that the light absorption of the back surface is increased, and the photoelectric conversion efficiency of the cell is obviously improved. However, since the resistance of the back aluminum gate line is large, it cannot be as thick as the front silver electrode, but needs to be wider. This results in an increase in the back light-shielding area, a decrease in the current at the back of the cell, and a decrease in the photoelectric conversion efficiency of the cell. In addition, the back silver is corrosive to the passivation film below the back silver in the sintering process, so that the passivation effect of the passivation film is poor, and the photoelectric conversion efficiency of the battery is also influenced.
Disclosure of Invention
In general, embodiments of the present disclosure provide solar cells and methods for fabricating solar cells.
In a first aspect of embodiments of the present disclosure, a solar cell is provided. The solar cell includes: a photoelectric conversion body; a first electrode on a first surface of the photoelectric conversion body; and a second electrode on a second surface of the photoelectric conversion body opposite to the first surface. The second electrode includes: a plurality of conductive contacts on the second surface and in contact with the photoelectric conversion body; and a light-transmitting conductive film electrically coupling the plurality of conductive contacts and at least partially covering the passivation film on the second surface.
In a second aspect of embodiments of the present disclosure, a method for fabricating a solar cell is provided. The method comprises the following steps: forming a photoelectric conversion body of the solar cell; forming a first electrode on a first surface of the photoelectric conversion body; and forming a second electrode on a second surface of the photoelectric conversion body opposite to the first surface. Forming the second electrode includes: forming a passivation film on the second surface; forming a light-transmitting conductive film over the passivation film; and forming a plurality of conductive contact portions in the plurality of through holes of the passivation film and the light-transmitting conductive film so as to be in contact with the photoelectric conversion body.
According to the scheme of the embodiment of the disclosure, the photoelectric conversion efficiency of the solar cell can be effectively improved, and meanwhile, the preparation process is simple and the cost is low.
It should be understood that the statements herein reciting aspects are not intended to limit the critical or essential features of the embodiments of the present disclosure, nor are they intended to limit the scope of the present disclosure. Other features of the present disclosure will become apparent from the following description.
Drawings
The above and other features, advantages and aspects of embodiments of the present disclosure will become more apparent by referring to the following detailed description when taken in conjunction with the accompanying drawings. In the drawings, like or similar reference characters designate like or similar elements, and wherein:
fig. 1A to 1J respectively show schematic cross-sectional views of an example solar cell manufacturing process in which embodiments of the present disclosure may be implemented;
FIG. 2 shows a schematic block diagram of an example solar cell according to one embodiment of the present disclosure; and
fig. 3 shows a schematic flow diagram of a method for manufacturing a solar cell according to one embodiment of the present disclosure.
Detailed Description
Embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While certain embodiments of the present disclosure have been illustrated in the accompanying drawings, it is to be understood that the present disclosure may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, but rather are provided for a more thorough and complete understanding of the present disclosure. It should be understood that the drawings and embodiments of the disclosure are for illustration purposes only and are not intended to limit the scope of the disclosure.
The terms "include" and variations thereof as used herein are inclusive and open-ended, i.e., "including but not limited to. The term "based on" is "based, at least in part, on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment". Relevant definitions for other terms will be given in the following description.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the embodiments. As used herein, the term "and/or" includes any and all combinations of one or more of the listed terms.
Fig. 1A-1J illustrate schematic cross-sectional views in an example solar cell manufacturing process 100 in which embodiments of the present disclosure may be implemented. It should be understood that fig. 1A-1J are merely examples, and aspects of embodiments of the present disclosure may also be applicable in the manufacture of other suitable solar cells.
As shown in fig. 1A, a raw silicon wafer 101 (hereinafter also referred to as "silicon substrate") is prepared.
As shown in fig. 1B, a texturing process is performed on the raw silicon wafer 101 to texture the surface of the raw silicon wafer 101, thereby forming a textured structure 102 to reduce reflectance. For convenience herein, only one-sided texturing is shown. It will be appreciated that in practice a double-faced napping situation is also possible.
As shown in fig. 1C, a diffusion process is performed on the textured silicon wafer 101 to form an emitter 103 on the surface of the silicon wafer 101. In some implementations, this may be by, for example, POCl3Diffused to form the emitter 103. Any other suitable diffusion means is also possible. Thus, a photoelectric conversion body of the solar cell is formed.
As shown in fig. 1D, the diffused silicon wafer 101 is laser doped with a front side Selective Emitter (SE) to form heavily doped regions 104 for subsequent formation of contacts to the front side electrodes.
As shown in fig. 1E, an etching process is performed on the SE laser doped silicon wafer 101 to remove the phosphosilicate glass and to polish the backside, as shown at 105. In some implementations, this can be achieved by, for example, wet etching. Any other suitable etching is also possible.
As shown in fig. 1F, an annealing process is performed on the etched silicon wafer 101 to repair damage, and a silicon oxide layer 106 is formed on the front surface of the silicon wafer 101 for resistance to a Potential Induced Degradation (PID) effect.
As shown in fig. 1G, a back surface plating process is performed on the back surface of the silicon wafer 101 to form a back surface passivation film 107 thereon. In some implementations, an aluminum oxide/silicon nitride composite dielectric film can be deposited on the back surface of a silicon wafer by PERC techniques. The higher charge density of the aluminum oxide is utilized to play a good role in field effect passivation, so that the conversion efficiency of the battery can be obviously improved.
As shown in fig. 1H, a front surface plating process is performed on the front surface of the silicon wafer 101 to form an antireflection film 108 thereon. The antireflective film may be formed, for example, by Plasma Enhanced Chemical Vapor Deposition (PECVD). In some implementations, the antireflective film may be a composite antireflective film.
As shown in fig. 1I, a back surface laser grooving process is performed on the back surface of the silicon wafer 101 to form grooves 109 in the back surface passivation film 107. Laser grooving is performed to enable contact between the back electrode and the silicon substrate.
As shown in fig. 1J, a screen printing process is performed on the front and back surfaces of the silicon wafer 101 to form front and back electrodes 110 and 111. For example, forming the front electrode 110 may include forming a silver grid line in the heavily doped region 104 to make contact with the p-n junction 103. For example, forming the back electrode 111 may include forming an aluminum gate line in the trench 109 to make contact with the silicon substrate 101. Up to this point, a front surface electrode (also referred to herein as a first electrode) and a back surface electrode (also referred to herein as a second electrode) are formed on the photoelectric conversion body.
The inventor notices through research that since the back surface adopts the aluminum grid line to replace the full aluminum back surface field, the aluminum grid line on the back surface of the PERC solar cell needs to be accurately nested and printed in the laser grooving area on the back surface, so that the aluminum grid line and the silicon substrate can be directly contacted in the grooved back surface passivation film layer area, and the conduction of a photon-generated carrier is realized. However, since the resistance of the back aluminum gate line is large, it cannot be as thick as the front silver electrode, but needs to be wider. This results in an increase in the back light-shielding area, a decrease in the current at the back of the cell, and a decrease in the photoelectric conversion efficiency of the cell. In addition, the back silver is corrosive to the passivation film below the back silver in the sintering process, so that the passivation effect of the passivation film is poor, and the photoelectric conversion efficiency of the battery is also influenced.
The embodiment of the disclosure provides an improved scheme, and the aluminum grid lines are connected by depositing a light-transmitting conductive film on the back surface, so that the back surface aluminum grid line is changed into the common conduction of the aluminum grid lines and the light-transmitting conductive film, the series resistance of a battery is reduced, and the photoelectric conversion efficiency is improved. In addition, due to the existence of the light-transmitting conductive film, the etching of the back silver to the passivation film can be reduced, and the photoelectric conversion efficiency is further improved. In addition, only the back transparent conductive film is added, so the preparation process of the battery is simple, the equipment cost is low, and the method is suitable for large-scale industrial production. This is explained in detail below with reference to fig. 2.
Fig. 2 shows a schematic block diagram of an example solar cell 200 according to one embodiment of the present disclosure. As shown in fig. 2, in the present embodiment, the solar cell 200 may include a photoelectric conversion body formed of a silicon substrate 205 and an emitter 206, a first electrode 208 formed on a first surface (front surface) of the photoelectric conversion body, and a second electrode including a plurality of conductive contacts 202 and a light-transmitting conductive film 203 formed on a second surface (back surface) of the photoelectric conversion body. A plurality of conductive contacts 202 may be located on the second surface and in contact with the silicon substrate 205 of the photoelectric conversion body. The light-transmitting conductive film 203 may electrically couple the plurality of conductive contacts 202 and at least partially cover the passivation film 204 on the second surface. Thus, the conductive contact portion and the transparent conductive film are conductive together, and the existence of the transparent conductive film reduces the series resistance of the cell, thereby improving the photoelectric conversion efficiency of the solar cell 200.
In some embodiments of the present disclosure, the light transmittance of the light-transmitting conductive film 203 may be higher than a predetermined value, which may be set empirically or as needed. For example, the light-transmitting conductive film 203 may include a transparent conductive film. Since the transparent conductive film 203 has light transmittance, the requirement of the backside of the double-sided battery for light transmittance is not affected by the addition of the transparent conductive film.
In some embodiments of the present disclosure, the thickness of the light-transmitting conductive film 203 may be in a range of 20nm to 80 nm. It should be understood that the disclosed embodiments are not so limited and that other thicknesses are possible.
In some embodiments of the present disclosure, the light-transmitting conductive film 203 may include a light-transmitting conductive film formed of at least one of zinc oxide or indium tin oxide. It should be understood that the disclosed embodiments are not limited thereto, and it is also possible to form the light-transmitting conductive film 203 from other suitable materials.
In some embodiments of the present disclosure, as shown in fig. 2, the solar cell 200 may further include a plurality of lead out portions 201 at least partially covering the light-transmissive conductive film 203 so as to be electrically coupled with the plurality of conductive contacts 202. The plurality of lead portions 201 are used for electrical connection with the outside. In some embodiments, the plurality of lead out portions 201 may be formed of silver gate lines. It is understood that it is also possible to form the plurality of lead-out portions 201 by other materials.
In the present embodiment, since the plurality of lead portions 201 are formed on the light-transmitting conductive film 203, instead of being directly formed on the passivation film 204, the corrosiveness of the lead portions 201 to the passivation film during the sintering process is reduced, the passivation effect of the passivation film 204 is prevented from being deteriorated due to the corrosiveness, and the photoelectric conversion efficiency of the solar cell 200 is enhanced.
It should be understood that although fig. 2 shows a plurality of lead-out portions 201, the plurality of lead-out portions 201 are optional. In an alternative embodiment of the present disclosure, the electrical connection to the outside may also be achieved through the conductive contact 202 without including the plurality of lead out portions 201. Accordingly, FIG. 2 is intended as an example, and not as a limitation on the present disclosure.
In some embodiments of the present disclosure, the plurality of conductive contacts 202 may be formed of aluminum gridlines. It should be understood that it is also possible to form the plurality of conductive contacts 202 from other materials. In some embodiments, the line width of the aluminum gridlines can be 50 μm-200 μm. In some embodiments, the number of aluminum gridlines can be from 100 to 150. Compared with the traditional scheme, the line width of the conductive contact part in the scheme can be reduced, so that the improvement of the photoelectric conversion efficiency of the back of the battery is facilitated.
In some embodiments of the present disclosure, as shown in fig. 2, the first electrode 208 is composed of a plurality of conductive portions and the plurality of conductive portions are separated by the antireflective film 207 on the first surface. In an alternative embodiment of the present disclosure, the first electrode 208 may be comprised of a conductive layer directly overlying the first surface. It should be understood that other suitable forms for forming the first electrode 208 are possible.
The structure of the solar cell according to the embodiment of the present disclosure is described so far. According to the solar cell disclosed by the embodiment of the disclosure, the light-transmitting conductive film is deposited on the back surface, and the plurality of conductive contact parts are connected, so that the back surface conductive contact part is changed into the common conduction of the conductive contact part and the light-transmitting conductive film, the series resistance of the cell is reduced, and the photoelectric conversion efficiency is improved. In addition, the line width of the conductive contact part can be reduced, which is beneficial to further improving the photoelectric conversion efficiency. In addition, due to the existence of the light-transmitting conductive film, the etching of the back silver to the passivation film can be reduced, and the photoelectric conversion efficiency is further improved.
Embodiments of the present disclosure also provide a method for fabricating a solar cell, which is described in more detail below with reference to fig. 3. Fig. 3 shows a schematic flow diagram of a method 300 for manufacturing a solar cell according to one embodiment of the present disclosure. For convenience, the following description will be made in conjunction with fig. 1 and 2.
As shown in fig. 3, at block 310, a photoelectric conversion body of the solar cell 200 is formed. The photoelectric conversion body is a portion for converting light energy into electric energy. In some embodiments of the present disclosure, the photoelectric conversion body may be formed by forming the emitter 206 on the silicon substrate 205. For example, the photoelectric conversion body may be formed by the processes of fig. 1A to 1C. It is to be understood that the photoelectric conversion body may also be formed in any other suitable way, existing or developed in the future, and the application is not limited to the above examples.
At block 320, a first electrode 208 is formed on a first surface of the photoelectric conversion body. For example, the first electrode 208 is formed on the upper surface of the emitter 206 of the photoelectric conversion body. In some embodiments of the present disclosure, selective laser doping and etching may be performed on the emitter 206, and the first electrode 208 is formed by screen printing. In some embodiments, an antireflective film 207 may also be formed on the emitter 206 before the first electrode 208 is formed to improve photoelectric conversion efficiency. For example, the first electrode 208 may be formed through the processes of fig. 1D, 1E, 1F, 1H, and 1J. It will be appreciated that this is merely an example and that the first electrode may be formed in any other suitable manner, whether now known or later developed. For example, the first electrode may be formed by directly forming a conductive layer on the emitter 206.
At block 330, a second electrode is formed on a second surface of the photoelectric conversion body opposite the first surface. According to an embodiment of the present disclosure, the second electrode may be formed in blocks 331 to 333 illustrated in fig. 3.
At block 331, a passivation film 204 is formed on the second surface, i.e., on the lower surface of the silicon substrate 205. For example, the passivation film 204 may be formed in the back surface plating process of fig. 1G. In some embodiments, an aluminum oxide layer is deposited on the lower surface of the silicon substrate 205, and a silicon nitride layer is deposited on the aluminum oxide layer, thereby forming an aluminum oxide/silicon nitride composite dielectric layer as the passivation film 204. For example, the alumina layer can be formed by Atomic Layer Deposition (ALD) at a temperature of 180-. In some embodiments, the thickness of the aluminum oxide layer may be 3nm to 30 nm. In some alternative embodiments, the thickness of the aluminum oxide layer may be 5nm to 20 nm. In some alternative embodiments, the thickness of the aluminum oxide layer may be 5nm, 10nm, 15nm, or 20 nm. It should be understood that this is merely an example and that the formation of the aluminum oxide layer is not limited thereto.
The silicon nitride layer may be formed by a Plasma Enhanced Chemical Vapor Deposition (PECVD) composite film. For example, the reaction is carried out in a reaction chamber with the temperature of 350 ℃ to 450 ℃, the pressure of 1.6 Torr to 2.5 Torr and the plasma power of 5000w to 7000 w. For example, the reaction gas NH may be introduced33.5slm-5.0slm and SiH4The first silicon nitride film is formed at a reaction time of 150-230 s and at a flow rate of 800-1200 sccm. Then, NH is changed3And SiH4Flow rate of NH3SiH was set to 4.5-7 slm4The flow rate is set to 400-900 sccm, and the reaction time is 390-450s, so as to form the second silicon nitride film. In some embodiments, the total thickness of the silicon nitride layer may be 70nm-120 nm. In some alternative embodiments, the thickness of the silicon nitride layer may be 80nm to 100 nm. In some alternative embodiments, the thickness of the silicon nitride layer may be 80nm, 85nm, 90nm, 95nm, or 100 nm. It should be understood that this is merely an example and that the formation of the silicon nitride layer is not limited thereto.
At block 332, a light-transmitting conductive film 203 is formed over the passivation film 204. For example, the light-transmitting conductive film 203 can be formed in the back surface plating step of fig. 1G. For example, a transparent conductive film is plated on the silicon nitride layer described above. In some embodiments of the present disclosure, the light-transmitting conductive film 203 may be deposited by sputtering. In some alternative embodiments of the present disclosure, the light-transmitting conductive film 203 may be formed by a Reactive Plasma Deposition (RPD) manner. It is to be understood that the light-transmitting conductive film 203 can be formed in any suitable manner, which is not limited in this application.
In some embodiments of the present disclosure, the light-transmitting conductive film 203 may include a transparent conductive film. In some embodiments of the present disclosure, the thickness of the light-transmitting conductive film 203 may be in a range of 20nm to 80 nm. In some embodiments of the present disclosure, the light-transmitting conductive film 203 may be formed of at least one of zinc oxide or indium tin oxide. It is to be understood that other forms of the light-transmitting conductive film 203 are also possible.
Carriers can be collected by good conductivity of the light-transmitting conductive film 203. With good light transmittance of the light-transmitting conductive film 203, incident light on the back surface of the solar cell 200 can be made to generate photogenerated carriers. Therefore, the photoelectric conversion efficiency of the solar cell can be greatly improved.
At block 333, a plurality of conductive contacts 202 are formed in the plurality of through holes of the passivation film 204 and the light-transmitting conductive film 203 to be in contact with the photoelectric conversion body. In some embodiments of the present disclosure, a plurality of through holes may be formed in the passivation film 204 and the light-transmitting conductive film 203 through the back laser grooving process shown in fig. 1I, and a plurality of aluminum gate lines in contact with the silicon substrate 205 may be formed in the plurality of through holes as the plurality of conductive contacts 202 through the screen printing process shown in fig. 1J. Since the light-transmitting conductive film 203 can connect the plurality of conductive contacts 202, the series resistance of the solar cell can be reduced, and the photoelectric conversion efficiency of the solar cell can be improved.
Further, in some embodiments of the present disclosure, the line width of the aluminum gate line may be formed to be 50 μm to 200 μm. In some embodiments, 100-150 aluminum gate lines may be formed. Compared with the traditional scheme, the line width of the conductive contact part in the scheme can be reduced, so that the improvement of the photoelectric conversion efficiency of the back of the battery is further facilitated. It should be understood that this is merely an example and that the formation of the conductive contact 202 is not limited thereto.
In some embodiments of the present disclosure, forming the second electrode may further include: a plurality of lead-out portions 201 are formed on at least a part of the light-transmitting conductive film 203 to be electrically coupled with the plurality of conductive contact portions 202. For example, a plurality of silver grating lines may be formed as a plurality of lead portions 201 on at least a part of the light-transmitting conductive film 203 by a screen printing process shown in fig. 1J. Since the plurality of lead-out portions 201 are formed on the light-transmitting conductive film 203, not directly on the passivation film 204, the corrosiveness of the lead-out portions 201 to the passivation film during the sintering process is reduced, the passivation effect of the passivation film 204 is prevented from being deteriorated due to the corrosiveness, and the photoelectric conversion efficiency of the solar cell 200 is enhanced. It should be understood that the above is merely an example, and it is also possible to form the second electrode including the plurality of conductive contacts 202 and the light-transmitting conductive film 203 by any other suitable manner.
The method of manufacturing a solar cell according to the embodiment of the present disclosure is described so far. According to the method, the transparent conductive film is added, so that the solar cell with greatly improved photoelectric conversion efficiency can be provided, and meanwhile, the preparation process is simple, the equipment cost is low, and the method is suitable for large-scale industrial production. In addition, due to the existence of the light-transmitting conductive film, the line width of the conductive contact part can be reduced, and the photoelectric conversion efficiency can be further improved.
Although the subject matter has been described in language specific to structural features and/or methodological acts, it is to be understood that the subject matter defined in the appended claims is not limited to the specific features or acts described above. Rather, the specific features and acts described above are disclosed as example forms of implementing the claims.
It will be understood by those skilled in the art that various changes and modifications may be made without departing from the principles of the disclosure, and these changes and modifications should be considered as falling within the scope of the disclosure.
Claims (10)
1. A solar cell, comprising:
a photoelectric conversion body;
a first electrode on a first surface of the photoelectric conversion body; and
a second electrode on a second surface of the photoelectric conversion body opposite to the first surface, and including:
a plurality of conductive contacts on the second surface and in contact with the photoelectric conversion body; and
a light-transmitting conductive film electrically coupling the plurality of conductive contacts and at least partially covering the passivation film on the second surface.
2. The solar cell of claim 1, wherein the light-transmitting conductive film comprises a transparent conductive film.
3. The solar cell according to claim 1, wherein the thickness of the light-transmitting conductive film is in a range of 20nm to 80 nm.
4. The solar cell according to claim 1, wherein the light-transmitting conductive film comprises a light-transmitting conductive film formed of at least one of zinc oxide or indium tin oxide.
5. The solar cell of claim 1, wherein the second electrode further comprises a plurality of extraction portions at least partially covering the light-transmitting conductive film to electrically couple with the plurality of conductive contacts.
6. A method for fabricating a solar cell, comprising:
forming a photoelectric conversion body of the solar cell;
forming a first electrode on a first surface of the photoelectric conversion body; and
forming a second electrode on a second surface of the photoelectric conversion body opposite to the first surface,
wherein forming the second electrode comprises:
forming a passivation film on the second surface;
forming a light-transmitting conductive film over the passivation film; and
a plurality of conductive contact portions are formed in the plurality of through holes of the passivation film and the light-transmitting conductive film to be in contact with the photoelectric conversion body.
7. The method according to claim 6, wherein the light-transmitting conductive film comprises a transparent conductive film.
8. The method according to claim 6, wherein a thickness of the light-transmitting conductive film is in a range of 20nm to 80 nm.
9. The method according to claim 6, wherein the light-transmitting conductive film comprises a light-transmitting conductive film formed of at least one of zinc oxide or indium tin oxide.
10. The method of claim 6, wherein forming the second electrode further comprises:
a plurality of lead-out portions are formed on at least a part of the light-transmitting conductive film to be electrically coupled with the plurality of conductive contact portions.
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