CN111063632A - High-density array type Faraday cylinder measuring probe - Google Patents
High-density array type Faraday cylinder measuring probe Download PDFInfo
- Publication number
- CN111063632A CN111063632A CN201910980545.6A CN201910980545A CN111063632A CN 111063632 A CN111063632 A CN 111063632A CN 201910980545 A CN201910980545 A CN 201910980545A CN 111063632 A CN111063632 A CN 111063632A
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- Prior art keywords
- heat dissipation
- insulating layer
- isolation cavity
- probe
- ceramic
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- 239000000523 sample Substances 0.000 title claims abstract description 64
- 230000017525 heat dissipation Effects 0.000 claims abstract description 70
- 239000000919 ceramic Substances 0.000 claims abstract description 63
- 238000002955 isolation Methods 0.000 claims abstract description 46
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 238000005259 measurement Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 5
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims description 3
- 230000003750 conditioning effect Effects 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000011343 solid material Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract 4
- 238000010292 electrical insulation Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/30—Nuclear fission reactors
Abstract
The invention discloses a high-density array type Faraday cylinder measuring probe, which comprises a high-temperature-resistant conductive plate, a ceramic insulating layer, a heat dissipation isolation cavity and a heat dissipation plate, wherein the high-temperature-resistant conductive plate is arranged on one side of the ceramic insulating layer, the heat dissipation isolation cavity is arranged on the other side of the ceramic insulating layer, and the heat dissipation plate is connected with the heat dissipation isolation cavity. The ceramic insulation layer realizes high-density distribution of the receiving probes and insulation among the receiving probes, and the heat dissipation isolation cavity realizes isolation of the cooling system and the acquisition system and enables the two systems to be output through a flange port. The Faraday device has the advantages of compact structure, reasonable layout, easily obtained raw materials, easy maintenance and low cost, solves the problems of high temperature resistance of materials, conductive particles falling off from the surface layer of the materials, electrical insulation of the probe and heat dissipation in continuous beam energy acquisition, increases the surface density of the probe, further improves the measurement accuracy of the Faraday cylinder, and cannot damage the stability of a vacuum environment.
Description
Technical Field
The invention relates to a high-density array type Faraday cylinder measuring probe, in particular to a Faraday cylinder measuring probe with a ceramic grid to improve the measuring precision, and belongs to a probe for measuring the ion beam flow energy in semiconductor equipment.
Background
Semiconductor technology has developed rapidly in the middle of the 20 th century, and increasingly complex processes require the use of more advanced semiconductor equipment, and ion implanters are an important doping tool. The ion implanter accelerates boron, phosphorus, arsenic and other ions and then injects the accelerated ions into a silicon wafer, wherein the energy of the injected ions needs to be measured by a Faraday cylinder.
As silicon wafers are developed from 6 inches to 12 inches, and the process is developed from micron level to 7 nm, the measurement accuracy of the ion parameters in the corresponding ion implanter is required to be higher and higher. The ion implanter continuously generates ion beam current in a working state, the energy of the beam current is continuously received by the Faraday cage measuring probe to cause heating failure of the probe, and the beam current receiving area of the Faraday cage can generate sediments after long-term use to influence the measuring precision, so that engineers at home and abroad continuously improve the ion implanter.
For example, chinese patent No. CN101064265A discloses an ion beam measuring device, in which a graphite sleeve is added to reduce the generation of foreign matters and prolong the life of the measuring cup. However, this improvement does not increase the density of the measuring cups, since the graphite sleeves are conductive and have a thick wall, which would lead to short circuits between the measuring cups if the density per unit area is too high, and conductive deposits, graphite off-particles, would also lead to short circuits between the individual measuring cups. In a word, the area of the area through which the ion beam passes is small, and the number of effective measuring cup bodies can be increased in unit area, so that the energy measurement precision can be improved; solving the above problems is crucial to the development of ion implanter equipment.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: in order to overcome the defects in the prior art, the invention provides a high-density array type Faraday cylinder measuring probe.
The technical scheme adopted by the invention is as follows:
a high-density array Faraday cylinder measuring probe comprises a high-temperature-resistant conductive plate, a ceramic insulating layer, a heat dissipation isolation cavity and a heat dissipation plate, wherein the high-temperature conductive plate is arranged on one side of the ceramic insulating layer, the heat dissipation isolation cavity is arranged on the other side of the ceramic insulating layer, and the heat dissipation plate is connected with the heat dissipation isolation cavity;
the high-temperature resistant conductive plate comprises an entry hole for penetrating ions;
the ceramic insulating layer comprises ceramic grids, and each grid is provided with a receiving probe;
the heat dissipation isolation cavity comprises two grooves and a flange port, wherein the first groove is used for storing the distribution cable, and the second groove is used for storing the cooling pipeline;
the heat dissipation plate comprises raised heat dissipation fins for increasing the surface area;
the high-temperature-resistant conducting plate, the ceramic insulating layer and the heat dissipation plate comprise through holes, and the heat dissipation isolation cavity comprises threaded holes.
The high-temperature resistant conductive plate comprises incident holes which are arranged in an array;
the ceramic insulating layer comprises ceramic grids, each ceramic grid corresponds to one entry hole, and ions directly enter the ceramic grids after passing through the entry holes and are further absorbed by receiving probes in the ceramic grids;
the vacuum conductive screw sequentially penetrates through the high-temperature-resistant conductive plate and the through hole of the ceramic insulating layer and then is fixed on the first groove of the heat dissipation isolation cavity.
The flange port of the heat dissipation isolation cavity comprises a multi-pin connector and a cooling circulation hole, and is used for connecting the signal conditioning module and injecting a cooling medium;
the multi-pin connector is used for connecting a probe interface for receiving a probe in the ceramic insulating layer, and the cooling circulation hole is an input/output interface of a circulation pipeline in the second groove of the heat dissipation isolation cavity.
The heat dissipation plate is fixed on the second groove of the heat dissipation isolation cavity through the vacuum conductive screws.
The receiving probes are connected with the ceramic insulating layer in a plugging mode, and each receiving probe can be detached.
The high-temperature resistant conductive plate, the heat dissipation isolation cavity, the heat dissipation plate, the receiving probe and the circulating pipeline are all made of heat-conducting and electric-conducting solid materials, wherein the high-temperature resistant conductive plate comprises graphite and tungsten;
the ceramic insulating layer is a high-hardness high-temperature-resistant conductive insulator, wherein the material of the ceramic insulating layer comprises boron nitride.
The invention has the advantages that:
(1) the invention is designed to be modularized and is convenient to assemble and maintain.
(2) The ceramic insulating layer comprises ceramic grids arranged in an array, and each grid and the receiving probe form an independent ion energy collecting point.
(3) The ceramic grid insulates and isolates each receiving probe, and the ceramic grid is made of boron nitride materials, so that the ceramic grid can continuously resist high temperature and is not easy to generate falling particles.
(4) The receiving probe and the ceramic grid of the invention belong to a pluggable structure, and are convenient to clean and replace.
(5) The heat dissipation isolation cavity and the heat dissipation plate can cool the cable in the first groove of the heat dissipation isolation cavity.
(6) The flange port of the heat dissipation isolation cavity comprises the data acquisition interface and the heat dissipation interface, and can be conveniently and quickly butted with a device outside the probe.
(7) The invention improves the measurement precision of the Faraday cylinder measuring probe through high-density array design under the conditions of high temperature resistance, easy maintenance and stability.
Drawings
FIG. 1 is a schematic front view of the present invention;
FIG. 2 is a schematic perspective view of the present invention;
FIG. 3a is a schematic side view of the present invention;
FIG. 3b is a schematic side cross-sectional view of the present invention;
FIG. 4a is a schematic view of a heat dissipation isolation chamber of the present invention including only a circulation pipe;
FIG. 4b is a schematic cross-sectional view of a heat dissipation isolation chamber of the present invention comprising only a circulation pipe;
FIG. 5 is a schematic diagram of a front view of a ceramic insulator layer containing only receiving probes according to the present invention;
FIG. 6 is a schematic side view of a ceramic insulator layer containing only receiving probes according to the present invention;
FIG. 7 is a schematic rear view of a ceramic insulator layer including only receiving probes according to the present invention;
in the figure: 1. a through hole; 2. entering a perforation hole; 3. a flange opening; 4. a high temperature resistant heat conducting plate; 5. a ceramic insulating layer; 6. a heat dissipation isolation cavity; 7. a heat dissipation plate; 8. cooling the circulation holes; 9. a multi-pin connector; 10. receiving a probe; 11. a probe interface; 12. a circulation pipe; 13. a ceramic grid.
Detailed Description
The following description of embodiments of the invention refers to the accompanying drawings and specific examples:
as shown in fig. 1, fig. 2, fig. 3a, and fig. 3b, the present invention provides a high-density array type faraday cage measuring probe, wherein the high-density array of incident holes 2 on the high-temperature resistant conductive plate 4 corresponds to the high-density array of receiving probes 10 in the ceramic insulating layer 5. And the vacuum conductive screw sequentially penetrates through the high-temperature-resistant conductive plate 4 and the through hole 1 on the ceramic insulating layer 5 and then is fixed to the heat dissipation isolation cavity 6, wherein the receiving probe 10 is not in contact with the high-temperature-resistant conductive plate 4 and the heat dissipation isolation cavity 6. The first groove of the heat dissipation isolation cavity 6 is used for storing cables for receiving the probe 10 and the multi-pin connector 9; the second recess is used for storing the circulation duct 12. The side surface of the heat dissipation isolation cavity 6 is provided with a flange opening 3, and a multi-pin connector 9 and a cooling circulation hole 8 of a circulation pipeline 12 are arranged in the flange opening 3. The second groove of the heat dissipation isolation cavity 6 is sealed by connecting the heat dissipation plate 7 with the heat dissipation isolation cavity, and the side surface of the heat dissipation plate 7 is provided with heat dissipation fins to increase the heat dissipation area.
As shown in fig. 4a and 4b, the present invention provides a high-density array type faraday cage measuring probe, wherein the heat dissipation isolation cavity 6 comprises two grooves, and the two grooves have different purposes and are isolated; the second groove for storing the circulation pipeline 12 is closed by the heat dissipation plate 7; the circulating pipeline 12 is formed by connecting a plurality of U-shaped hollow pipelines, and the circulating pipeline 12 is directly contacted with the heat dissipation isolation cavity 6, so that the cooling medium circulating in the circulating pipeline 12 can take away more heat as much as possible.
As shown in fig. 5, 6 and 7, the present invention provides a high-density array type faraday cage measuring probe, wherein a large number of ceramic grids 13 are arranged in a ceramic insulating layer 5, and the ceramic grids 13 correspond to an incident hole 2 and a receiving probe 10 one by one. The ceramic grid 13 provides electrical isolation between the receiving probes 10 so that the receiving probes 10 do not contact the refractory conducting plate 4. One side of the receiving probe 10 for directly receiving the beam current is positioned in the ceramic grid 13, the probe interface 11 on the other side protrudes from the ceramic insulating layer 5, and the probe interface 11 is convenient for connecting a cable. The receiving probe 10 and the ceramic insulating layer 5 are connected in a plug-in mode, normal stress exists on a contact surface, and therefore replacement and maintenance are convenient.
The specific implementation steps are as follows:
referring to fig. 1 to 7, the present invention provides a high-density array type faraday cage measuring probe, wherein one end of a cable is welded to a probe interface 11; then inserting the receiving probes 10 into the ceramic insulation layers 5, respectively, with at most one receiving probe 10 per ceramic grid 13; and one end of the cable is soldered to the multi-pin connector 9. The cable is put into the first groove of the heat dissipation isolation cavity 6 after being sorted.
Further, the first recess is sealed with a ceramic insulating layer 5.
Further, the ceramic grid 13 of the ceramic insulating layer 5 is covered with a high temperature conductive plate 4.
Further, vacuum conductive screws are used to penetrate through the high-temperature resistant conductive plate 4 and the through holes 1 of the ceramic insulating layer 5, and the two are fixed to the heat dissipation isolation cavity 6.
Further, the circulation pipe 12, the cooling circulation hole 8 and the second groove of the heat dissipation isolation chamber 6 are already integrated and are not assembled, and at this time, the heat dissipation plate 7 is fixed to the second groove of the heat dissipation isolation chamber 6 through vacuum screws.
And finally, connecting the assembled high-density array type Faraday cylinder measuring probe with an external conveying device through a flange opening 3, and directly contacting the high-density array type Faraday cylinder measuring probe with the ion beam through the conveying device.
Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (6)
1. A high-density array type Faraday cylinder measuring probe is characterized in that:
the high-temperature-resistant heat dissipation isolation cavity comprises a high-temperature-resistant conductive plate, a ceramic insulating layer, a heat dissipation isolation cavity and a heat dissipation plate, wherein the high-temperature-resistant conductive plate is arranged on one side of the ceramic insulating layer, the heat dissipation isolation cavity is arranged on the other side of the ceramic insulating layer, and the heat dissipation plate is connected with the heat dissipation isolation cavity;
the high-temperature resistant conductive plate comprises an entry hole for penetrating ions;
the ceramic insulating layer comprises ceramic grids, and each grid is provided with a receiving probe;
the heat dissipation isolation cavity comprises two grooves and a flange port, wherein the first groove is used for storing the distribution cable, and the second groove is used for storing the cooling pipeline;
the heat dissipation plate comprises raised heat dissipation fins for increasing the surface area;
the high-temperature-resistant conducting plate, the ceramic insulating layer and the heat dissipation plate comprise through holes, and the heat dissipation isolation cavity comprises threaded holes.
2. The high-density array faraday cage measurement probe of claim 1, wherein:
the high-temperature resistant conductive plate comprises incident holes which are arranged in an array;
the ceramic insulating layer comprises ceramic grids, each ceramic grid corresponds to one entry hole, and ions directly enter the ceramic grids after passing through the entry holes and are further absorbed by receiving probes in the ceramic grids;
the receiving probe is not in contact with the high-temperature-resistant conductive plate and the heat dissipation isolation cavity;
the vacuum conductive screw sequentially penetrates through the high-temperature-resistant conductive plate and the through hole of the ceramic insulating layer and then is fixed on the first groove of the heat dissipation isolation cavity.
3. The high-density array faraday cage measurement probe of claim 1, wherein:
the flange port of the heat dissipation isolation cavity comprises a multi-pin connector and a cooling circulation hole, and is used for connecting the signal conditioning module and injecting a cooling medium;
the multi-pin connector is used for connecting a probe interface for receiving a probe in the ceramic insulating layer, and the cooling circulation hole is an input/output interface of a circulation pipeline in the second groove of the heat dissipation isolation cavity.
4. The high-density array faraday cage measurement probe of claim 1, wherein:
the heat dissipation plate is fixed on the second groove of the heat dissipation isolation cavity through the vacuum conductive screws.
5. The high-density array faraday cage measurement probe of claim 1, wherein:
the receiving probes are connected with the ceramic insulating layer in a plugging mode, and each receiving probe can be detached.
6. The high-density array faraday cage measurement probe of claim 1, wherein:
the high-temperature resistant conductive plate, the heat dissipation isolation cavity, the heat dissipation plate, the receiving probe and the circulating pipeline are all made of heat-conducting and electric-conducting solid materials, wherein the high-temperature resistant conductive plate comprises graphite and tungsten;
the ceramic insulating layer is a high-hardness high-temperature-resistant conductive insulator, wherein the material of the ceramic insulating layer comprises boron nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910980545.6A CN111063632B (en) | 2019-10-15 | 2019-10-15 | High-density array Faraday cage measuring probe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910980545.6A CN111063632B (en) | 2019-10-15 | 2019-10-15 | High-density array Faraday cage measuring probe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111063632A true CN111063632A (en) | 2020-04-24 |
| CN111063632B CN111063632B (en) | 2024-02-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910980545.6A Active CN111063632B (en) | 2019-10-15 | 2019-10-15 | High-density array Faraday cage measuring probe |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114415225A (en) * | 2021-12-20 | 2022-04-29 | 核工业西南物理研究院 | Nuclear fusion alpha particle loss detector |
| WO2024045789A1 (en) * | 2022-08-29 | 2024-03-07 | 华为技术有限公司 | Faraday cup and charged particle beam measurement method |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN111063632B (en) | 2024-02-06 |
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