CN111063458B - Device and method for accurately calibrating plasma injection impurities - Google Patents
Device and method for accurately calibrating plasma injection impurities Download PDFInfo
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- CN111063458B CN111063458B CN201911353478.1A CN201911353478A CN111063458B CN 111063458 B CN111063458 B CN 111063458B CN 201911353478 A CN201911353478 A CN 201911353478A CN 111063458 B CN111063458 B CN 111063458B
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21B—FUSION REACTORS
- G21B1/00—Thermonuclear fusion reactors
- G21B1/25—Maintenance, e.g. repair or remote inspection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Abstract
The invention discloses a device and a method for accurately marking plasma injection impurities. The device utilizes the electronic balance to directly read the impurity injection amount under different conditions of excitation through simulating the vacuum environment when the plasma discharges, thereby not only greatly reducing the influence caused by the pollution of the impurities, but also avoiding the error caused by human factors and improving the accuracy of calibration data. The invention can fully protect and collect the impurity particles (powder) falling when the impurity is injected into the distribution system for testing, thereby realizing the reutilization. The invention has strong visibility, high accuracy and strong economical property, and provides effective data support and technical guarantee for accurately controlling impurity injection on a fusion device.
Description
Technical Field
The invention relates to the technical field of fusion reactor vacuum, in particular to a device and a method for accurately calibrating plasma injection impurities.
Background
With the continuous promotion of fusion research, scientific research workers try to inject impurities in a mode of falling by utilizing the self gravity of impurity particles, and experiments such as lithium powder injection and boron powder injection of a large number of divertors are carried out on domestic and domestic Tokamak fusion devices, so that a stout experiment result is obtained. It has been found that a certain amount of impurity implantation can have a good effect of suppressing the boundary local mode of the high confinement mode plasma, but excessive impurity implantation may cause plasma breakage, which requires precise control of the amount of impurity implantation. In the mesa calibration experiment of the impurity implantation system, the traditional method is usually carried out in the atmospheric environment, which has great difference from the plasma discharge environment, and especially for powdery impurities, the drop flow rate difference between the vacuum condition and the atmospheric condition is obvious. In addition, for active metal impurity particles (such as lithium spheres and lithium powder), the active metal impurity particles are easy to react with O in the air 2 、N 2 、CO、H 2 O、CO 2 And the like, react to be contaminated, thereby affecting the calibration result. Although there is a calibration method under vacuum, which measures the volume of the impurities with a sealable plexiglass measuring cylinder and converts the volume into the mass of the impurities, the mass of the falling impurities cannot be directly measured. On the one hand, individual variability of the readings introduces errors; on the other hand, due to the influence of the regularity of the impurities, the gaps among the impurity particles falling and deposited in the measuring cylinder are not uniform, and a large error exists when the pure passing volume is converted into the mass. In addition, due to the scarcity of the impurity material injected into the plasma, the purchase cost is high, and if the impurity particles can be protected from being polluted, the repeated utilization can be realized, and a large amount of scientific research expenses can be saved. Therefore, there is a need for an apparatus that can accurately target plasma implanted impurities and protect them from contamination.
Disclosure of Invention
The invention aims to make up for the defects of the prior art and provides a device and a method for accurately calibrating plasma injection impurities so as to realize accurate control of impurity injection quantity in a fusion experiment.
The invention is realized by the following technical scheme:
a device for accurately calibrating plasma injection impurities comprises a vacuum chamber, an electronic balance, a gate valve, a guide tube, an electrode flange, an air suction valve, an air extractor set, an inflation valve and an operating lever; the vacuum chamber is a vacuum cavity with a glass panel, and the vacuum cavity is used for fixing the glass panel as the front of the vacuum chamber by welding a fixing seat with a groove at one end of a rectangular tube; the other end of the rectangular tube is welded with a flat plate as the back of the vacuum chamber; two holes are formed in the back of the vacuum chamber, and an air exhaust pipeline and a first pipeline are welded respectively; selecting one surface of a rectangular pipe as the top surface of a vacuum chamber, wherein the top surface is provided with three holes, a third pipeline is welded at the outer side of a first hole, a second hole is positioned in the middle of the top surface, a second pipeline and a guide pipe are respectively welded at the outer side and the inner side of the second hole, and a fourth pipeline is welded at the third hole; the electronic balance is horizontally placed in the vacuum chamber, the tray of the electronic balance is kept right below the guide tube, and the display screen faces the glass panel.
Further, the rectangular tube is an SUS316 tube, and the flat plate is an SUS316 plate.
Furthermore, the fixing seat with the groove is an SUS316 plate, the middle of the fixing seat is hollowed, and screw holes are uniformly formed in the periphery of the fixing seat.
Furthermore, the groove is a runway-shaped groove and is used for limiting the sealing ring; the sealing ring is a runway-shaped fluororubber ring and is used for vacuum sealing of the glass panel.
Furthermore, the glass panel is pressure-resistant organic glass, screw holes are uniformly formed in the periphery of the glass panel and correspond to the screw holes of the fixed seat on the front side of the vacuum chamber, and the glass panel is used for observing the inside of the vacuum chamber and directly reading the reading of the electronic balance.
Furthermore, the air exhaust pipeline is an SUS316 seamless pipe, one end of the air exhaust pipeline is welded at one opening on the back surface of the vacuum chamber, and the other end of the air exhaust pipeline is welded with a CF35 flange connected with an air exhaust valve.
Furthermore, the air extraction valve is a manual baffle valve for converting CF35 into KF40, a CF35 flange is butted with a CF35 flange on an air extraction pipeline, and the KF40 flange is connected with an air extractor set through a corrugated pipe.
Furthermore, the air extractor group comprises a JTFB-300F type molecular pump, a TRP-12 type mechanical pump and a ZDF-5227AX type vacuum gauge, and the ultimate vacuum is 2.0 x 10 -5 Pa。
Further, the first pipe is an SUS316 seamless pipe, one end of the first pipe is welded at one hole on the back surface of the vacuum chamber, and the other end of the first pipe is welded with a CF35 flange connected with an electrode flange.
Furthermore, the electrode flange is a 2-core M3 electrode CF35 flange, the pressure resistance is 1000V, and the vacuum leakage rate is less than 5.0E-11Pam 3 S; the non-vacuum side electrode of the electrode flange is connected with the output end of the voltage converter, and the other side electrode of the electrode flange is connected with the power supply input end of the electronic balance.
Furthermore, after the electronic balance is powered by the voltage converter, the weight of the impurities falling into the tray is accurately measured.
Furthermore, the input of the voltage converter is AC 220V/0.6A and 50Hz, and the output is DC 12V/1.5A; the voltage converter continuously supplies power to the electronic balance after being connected through the electrode flange.
Furthermore, the second pipeline is an SUS316 seamless pipe, one end of the second pipeline is welded on the outer side of the second hole on the top surface of the vacuum chamber, and the other end of the second pipeline is welded with a CF50 flange connected with a gate valve.
Furthermore, the gate valve is an ultrahigh vacuum CF50 manual gate valve, CF50 flange interfaces are arranged on two sides of the gate valve, and the vacuum leakage rate is less than 1.3E-10Pam 3 S; the vacuum sealing side of the gate valve is connected with a CF50 flange on the second pipeline, and the other side of the gate valve is connected with an impurity injection distribution system.
Furthermore, the guide pipe is a flared reducing SUS316 pipe, a large opening phi 35 and a small opening phi 26, and an SUS316 seamless pipe is welded below the small opening.
Furthermore, the third pipeline is an SUS316 seamless pipe, one end of the third pipeline is welded at the first hole on the top surface of the vacuum chamber, and the other end of the third pipeline is welded with a CF35 flange connecting operating rod; the first hole is positioned on the top surface of the vacuum chamber close to the front surface side.
Furthermore, the operating rod is of a magnetic control transmission structure, and the electronic balance starting/calibrating key is operated by rotating the operating rod outside the vacuum chamber.
Furthermore, the fourth pipeline is an SUS316 seamless pipe, one end of the fourth pipeline is welded at the third hole on the top surface of the vacuum chamber, and the other end of the fourth pipeline is welded with a CF35 flange and connected with an inflation valve; the third hole may be located on the top surface of the vacuum chamber near the back side or the left or right side surface.
Further, the inflation valve is an ultrahigh vacuum manual baffle valve of CF 35-KF 40, a CF35 flange is butted with a CF35 flange on the fourth pipeline, and the KF40 flange is connected with inert gas.
Further, the inert gas is argon.
According to another aspect of the present invention, a method for accurately calibrating plasma-implanted impurities is provided, comprising the steps of:
step 1, opening a glass panel on the front side of a vacuum chamber, placing an electronic balance into the vacuum chamber, keeping a tray of the electronic balance under a guide pipe, and enabling a display screen to face the glass panel; the voltage converter supplies power to the electronic balance after being connected by the electrode flange;
step 3, pressing an electronic balance calibration key by using the operating lever to finish the calibration of the electronic balance; distributing system specific voltage V for impurity implantation 1 Signal triggering, triggering time continuous t 1 The scattered impurities fall into a tray of the electronic balance through a guide pipe, and after the reading of the electronic balance is stable, a control lever is used for pressing an electronic balance start key to record Data 1;
and 4, pressing the calibration key of the electronic balance by using the operating lever to finish the calibration of the electronic balance. Distributing system specific voltage V for impurity implantation 1 Signal triggering, triggering time continuous t 2 The scattered impurities fall into a tray of the electronic balance through the guide pipe, and after the reading of the electronic balance is stable, the electronic balance is pressed by the operating rodAn activate key, record Data 2;
step 9, repeating the steps 2-8; the impurities are calibrated to inject other impurities in the distribution system.
Advantageous effects
The invention has the advantages that: the device and the method for accurately calibrating the injected impurities of the plasma not only greatly reduce the influence of the polluted impurities and avoid the errors caused by human factors, but also improve the accuracy of calibration data by simulating the vacuum environment of the plasma during discharge and directly reading the injected impurity amount under different conditions by using an electronic balance. In addition, impurity particles (powder) falling during the test of the impurity injection distribution system can be fully protected and collected, and the repeated utilization is realized. The invention has strong visibility, high accuracy and strong economy, and provides effective data support and technical guarantee for accurately controlling impurity injection on a fusion device.
Drawings
FIG. 1 is a schematic diagram of a calibration system;
FIG. 2 is a schematic view of the mounting base;
fig. 3 is a schematic view of a glass panel and a gasket.
Description of reference numerals: the vacuum chamber comprises a vacuum chamber 1, an air exhaust pipeline 2, an air exhaust valve 3, an air exhaust unit 4, a first pipeline 5, an electrode flange 6, a second pipeline 7, a guide pipe 8, a gate valve 9, an electronic balance 10, a tray 11, a voltage converter 12, a third pipeline 13, an operating rod 14, a fourth pipeline 15, an inflation valve 16, inert gas 17, impurity injection distribution system 18, a fixed seat 19, a groove 20, a glass panel 21 and a sealing ring 22.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
As shown in FIG. 1 (said FIG. 1 is a schematic view, not a front view of the apparatus of the present invention), an apparatus for precisely calibrating the impurities injected in a plasma comprises a vacuum chamber 1, an electronic balance 10, a gate valve 9, a guide tube 8, an electrode flange 6, an air extraction valve 3, an air extractor set 4, an inflation valve 16 and an operating lever 14.
The vacuum chamber 1 is a vacuum cavity with a glass panel 21, the length of the vacuum cavity is 450mm, the width of the vacuum cavity is 400mm, the height of the vacuum cavity is 500mm, the wall thickness of a cuboid SUS316 pipe is 2mm, and one end of the vacuum cavity is welded with a fixing seat 19 with a groove 20 and used for fixing the glass panel 21 as the front face of the vacuum chamber 1; the other end was welded with 500mm × 400mm × 2mm SUS316 plate as the back surface of the vacuum chamber 1. Two holes with diameter of 38 are arranged on the left and the right of the back of the vacuum chamber 1, and an air exhaust pipeline 2 and a first pipeline 5 are respectively welded. Selecting one surface of a rectangular SUS316 pipe with the size of 450mm multiplied by 400mm as the top surface of the vacuum chamber 1, wherein three holes are formed in the middle line of the short edge of the top surface, the first hole is a phi 38 hole, and a third pipeline 13 is welded on the outer side of the first hole; the second hole is positioned in the middle of the top surface and is a phi 55 hole, and the outer side and the inner side of the second hole are respectively welded with a second pipeline 7 and a guide pipe 8; the third hole is a phi 38 hole, and a fourth pipeline 15 is welded on the outer side of the third hole; the third hole can be positioned on the top surface of the vacuum chamber close to the back surface side, or on the left side surface or the right side surface of the vacuum chamber; the electronic balance 10 is placed in the vacuum chamber 1, and a tray 11 holding the electronic balance 10 is positioned right below the guide tube 8 with the display screen facing the glass panel 21.
The fixing seat 19 with the groove 20 is an SUS316 plate with the length of 530mm, the width of 430mm and the wall thickness of 10mm, a hole with the size of 500mm multiplied by 400mm is formed in the middle, and screw holes with the diameter of 10mm are uniformly formed in the periphery.
The groove 20 is a runway-shaped groove with the width of 5mm and the depth of 3mm, the size of the central line is 510mm multiplied by 410mm, and the position of the sealing ring 22 is limited.
The sealing ring 22 is a phi 5 racetrack-shaped fluororubber ring with a perimeter of 1835mm, and is used for vacuum sealing of the glass panel 21.
The glass panel 21 is made of pressure-resistant organic glass with the length of 530mm, the width of 430mm and the wall thickness of 20mm, and screw holes with the diameter of 10 are uniformly formed in the periphery of the glass panel and correspond to the screw holes of the front fixed seat 19 of the vacuum chamber 1. For observing the inside of the vacuum chamber 1, the reading of the electronic balance 10 is directly read out.
The air exhaust pipeline 2 is an SUS316 seamless pipe with the diameter of 38 multiplied by 50mm and the wall thickness of 2mm, one end of the air exhaust pipeline is welded at the opening of the back surface of the vacuum chamber 1, and the other end of the air exhaust pipeline is welded with a CF35 flange connected with the air exhaust valve 3.
The air extraction valve 3 is an ultrahigh vacuum manual baffle valve with CF35 converted into KF40, a CF35 flange is butted with a CF35 flange on the air extraction pipeline 2, and the KF40 flange is connected with the air extractor set 4 through a corrugated pipe.
The air extractor set 4 comprises a JTFB-300F type molecular pump, a TRP-12 type mechanical pump, a ZDF-5227AX type vacuum gauge and the like, and the ultimate vacuum is 2.0 multiplied by 10 -5 Pa。
The first pipe 5 is an SUS316 seamless pipe with diameter of 38X 50mm and wall thickness of 2mm, one end of the first pipe is welded at the opening of the back of the vacuum chamber 1, and the other end is welded with a CF35 flange to be connected with the electrode flange 6.
The electrode flange 6 is a 2-core M3 electrode CF35 flange, the pressure resistance is 1000V, and the vacuum leakage rate is less than 5.0E-11Pam 3 And s. The non-vacuum side electrode of the electrode flange 6 is connected with the output end of the voltage converter 12, and the other side electrode is connected with the power input end of the electronic balance 10.
The electronic balance 10 is an AP225WD type electronic balance, the measuring range is 102g, the precision is 0.01mg, the average response time is 8s, and the size of the tray is 91 mm. After being supplied with power through the voltage converter 12, the weight of the foreign substances falling into the tray 11 is accurately measured.
The voltage converter 12 is an NBS18C120150HC power adapter, the input is AC 220V/0.6A and 50Hz, and the output is DC 12V/1.5A. The voltage converter 12 is easy to 'explode' in a vacuum environment and cannot normally supply power, and can continuously supply power to the electronic balance 10 after being connected through the electrode flange 6.
The second pipeline 7 is an SUS316 seamless pipe with the diameter of 55 mm multiplied by 80mm and the wall thickness of 2mm, one end of the second pipeline is welded at the outer side of the opening on the top surface of the vacuum chamber 1, and the other end of the second pipeline is welded with a CF50 flange connected with a gate valve 9.
The gate valve 9 is an ultrahigh vacuum CF50 manual gate valve, the drift diameter of the valve is 50mm, CF50 flange interfaces are arranged on two sides, and the vacuum leakage rate is less than 1.3E-10Pam 3 And s. The vacuum sealing side of the gate valve 9 is connected with a CF50 flange on the second pipeline 7, and the other side is connected with an impurity injection distribution system 18.
The guide tube 8 is a flared reducing SUS316 tube, a large-opening phi 35 and a small-opening phi 26, the vertical height is 20mm, the wall thickness is 2mm, a SUS316 seamless tube with phi 26 multiplied by 30mm and the wall thickness of 2mm is welded below the small opening.
The third pipe 13 is an SUS316 seamless pipe with diameter of 38X 40mm and wall thickness of 2mm, one end of which is welded at the first hole on the top surface of the vacuum chamber 1, and the other end of which is welded with a CF35 flange connected with the operating rod 14. The first hole is positioned on the top surface of the vacuum chamber close to the front surface side.
The operating rod 14 is a magnetic control transmission structure, and the starting/calibration key of the electronic balance 10 can be operated by rotating the operating rod 14 on the outer side of the vacuum chamber 1.
The fourth pipeline 15 is an SUS316 seamless pipe with diameter of 38X 40mm and wall thickness of 2mm, one end of the fourth pipeline is welded at the third hole on the top surface of the vacuum chamber, and the other end of the fourth pipeline is welded with a CF35 flange connected with an inflation valve 16. The third hole may be located on the top surface of the vacuum chamber near the back side or the left or right side surface.
The gas charging valve 16 is an ultrahigh vacuum manual baffle valve of CF 35-KF 40, a CF35 flange is butted with a CF35 flange on the fourth pipeline 15, and the KF40 flange is connected with inert gas 17.
The inert gas 17 is argon.
The invention also provides a method for accurately calibrating the plasma injection impurities, which comprises the following steps:
first, the front glass panel 21 of the vacuum chamber 1 is opened, the electronic balance 10 is placed in the vacuum chamber 1, the tray 11 holding the electronic balance 10 is positioned right below the guide pipe 8, and the display screen faces the glass panel 21. The voltage converter 12 is switched by the electrode flange 6 to supply power to the electronic balance 10.
Secondly, a sealing ring 22 is put into a groove 20 of a fixed seat 19 of the vacuum chamber 1, a glass panel 21 is closed, and the sealing is tightened by screws. The inflation valve 16 and the gate valve 9 are closed, the extraction valve 3 is opened, and the air extractor set 4 is started. When the vacuum degree of the vacuum chamber 1 reaches 5.0X 10 - 5 And when Pa, opening the gate valve 9, and communicating the impurity injection distribution system 18 with the vacuum chamber 1.
Thirdly, the electronic balance 10 is calibrated by pressing the calibration key of the electronic balance 10 through the operating rod 14. A specific voltage V is given to impurity implantation distribution system 18 1 Signal triggering, triggering time continuous t 1 The scattered impurities fall into a tray 11 of the electronic balance 10 through a guide pipe 8, and after the reading of the electronic balance 10 is stabilized, a start key of the electronic balance 10 is pressed by using a control lever 14, and Data1 is recorded.
And fourthly, pressing the calibration key of the electronic balance 10 by using the operating lever 14 to finish the calibration of the electronic balance 10. A specific voltage V is given to impurity implantation distribution system 18 1 Signal triggering, triggering time is t 2 The scattered impurities fall into a tray 11 of the electronic balance 10 through a guide pipe 8, and after the reading of the electronic balance 10 is stabilized, a start key of the electronic balance 10 is pressed by using a control lever 14, and Data2 is recorded.
Using the operating rod 14 to press the electronBalance 10 calibration key to complete the calibration of electronic balance 10. A specific voltage V is given to impurity implantation distribution system 18 1 Signal triggering, triggering time continuous t 3 The scattered impurities fall into a tray 11 of the electronic balance 10 through a guide pipe 8, and after the reading of the electronic balance 10 is stabilized, a start key of the electronic balance 10 is pressed by using a control lever 14, and Data3 is recorded.
Sixthly, calculating out at a specific voltage V 1 Under conditions, impurity injection distribution system 18 is at t n Accurately calibrating data of impurity injection amount in a time period; n is a natural number.
Seventhly, repeating the third, fourth, fifth and sixth steps to obtain the final product at a specific voltage V n Under conditions, impurity injection distribution system 18 is at t n And accurately calibrating the data of the impurity injection amount in the time period.
Eighthly, closing the gate valve 9 and the extraction valve 3, stopping the air extractor group 4, opening the inflation valve 16, filling inert gas 17 to 0.2MPa into the vacuum chamber 1, opening the glass panel 21, and recovering impurities on the tray 11 under the protection of the inert gas 17.
Ninthly, repeating the step two to the step eight, and accurately calibrating other impurities injected into the distribution system 18.
The above embodiments are only used for illustrating but not limiting the technical solutions of the present invention, and although the above embodiments describe the present invention in detail, those skilled in the art should understand that: modifications and equivalents may be made thereto without departing from the spirit and scope of the invention and it is intended that all modifications and equivalents be included within the scope of the claims.
Claims (21)
1. The utility model provides a device of accurate calibration plasma injection impurity which characterized in that: comprises a vacuum chamber, an electronic balance, a gate valve, a guide tube, an electrode flange, an air extraction valve, an air extractor set, an inflation valve and an operating lever; the vacuum chamber is a vacuum cavity with a glass panel, and the vacuum cavity is used for fixing the glass panel as the front of the vacuum chamber by welding a fixing seat with a groove at one end of a rectangular tube; the other end of the rectangular pipe is welded with a flat plate as the back of the vacuum chamber; two holes are formed in the back of the vacuum chamber, and an air exhaust pipeline and a first pipeline are welded respectively; selecting one surface of a rectangular pipe as the top surface of a vacuum chamber, wherein the top surface is provided with three holes, a third pipeline is welded on the outer side of a first hole, a second hole is positioned in the middle of the top surface, a second pipeline and a guide pipe are respectively welded on the outer side and the inner side of the second hole, and a fourth pipeline is welded on the outer side of the third hole; the electronic balance is horizontally placed in the vacuum chamber, the tray of the electronic balance is kept right below the guide tube, and the display screen faces the glass panel.
2. The apparatus of claim 1, wherein: the rectangular tube is an SUS316 tube, and the flat plate is an SUS316 plate.
3. The apparatus of claim 1, wherein: the fixing seat with the groove is an SUS316 plate, the middle of the fixing seat is hollowed, and screw holes are uniformly formed in the periphery of the fixing seat.
4. The apparatus for precisely calibrating plasma implanted impurities as claimed in claim 1, wherein: the groove is a runway-shaped groove and is used for limiting the sealing ring; the sealing ring is a runway-shaped fluororubber ring and is used for vacuum sealing of the glass panel.
5. The apparatus of claim 1, wherein: the glass panel is made of pressure-resistant organic glass, screw holes are uniformly formed in the periphery of the glass panel and correspond to the screw holes of the fixed seat on the front side of the vacuum chamber, and the glass panel is used for observing the inside of the vacuum chamber and directly reading the reading of the electronic balance.
6. The apparatus of claim 1, wherein: the air exhaust pipeline is an SUS316 seamless pipe, one end of the air exhaust pipeline is welded at one opening on the back of the vacuum chamber, and the other end of the air exhaust pipeline is welded with a CF35 flange connected with an air exhaust valve.
7. The apparatus of claim 6, wherein: the air extraction valve is a manual baffle valve of CF 35-KF 40, a CF35 flange is butted with a CF35 flange on an air extraction pipeline, and the KF40 flange is connected with an air extractor set through a corrugated pipe.
8. The apparatus of claim 7, wherein: the air extractor set comprises a JTFB-300F type molecular pump, a TRP-12 type mechanical pump and a ZDF-5227AX type vacuum gauge, and the ultimate vacuum is 2.0 x 10 -5 Pa。
9. The apparatus of claim 1, wherein: the first pipeline is an SUS316 seamless pipe, one end of the first pipeline is welded at one hole on the back of the vacuum chamber, and the other end of the first pipeline is welded with a CF35 flange connected with an electrode flange.
10. The apparatus of claim 9, wherein: the electrode flange is a 2-core M3 electrode CF35 flange, the pressure resistance is 1000V, and the vacuum leakage rate is less than 5.0E-11Pam 3 S; the non-vacuum side electrode of the electrode flange is connected with the output end of the voltage converter, and the other side electrode of the electrode flange is connected with the power supply input end of the electronic balance.
11. The apparatus of claim 1, wherein: after the electronic balance is powered by the voltage converter, the weight of the impurities falling into the tray is accurately measured.
12. The apparatus of claim 11, wherein: the input of the voltage converter is AC 220V/0.6A and 50Hz, and the output is DC 12V/1.5A; the voltage converter continuously supplies power to the electronic balance after being connected through the electrode flange.
13. The apparatus of claim 1, wherein: the second pipeline is an SUS316 seamless pipe, one end of the second pipeline is welded at the outer side of the second hole on the top surface of the vacuum chamber, and the other end of the second pipeline is welded with a CF50 flange connected with a gate valve.
14. The apparatus of claim 13, wherein: the gate valve is an ultrahigh vacuum CF50 manual gate valve, CF50 flange interfaces are arranged on two sides of the gate valve, and the vacuum leakage rate is less than 1.3E-10Pam 3 S; the vacuum sealing side of the gate valve is connected with a CF50 flange on the second pipeline, and the other side of the gate valve is connected with an impurity injection distribution system.
15. The apparatus of claim 1, wherein: the guide tube is a flared reducing SUS316 tube, a large opening phi 35 and a small opening phi 26, and an SUS316 seamless tube is welded below the small opening.
16. The apparatus of claim 1, wherein: the third pipeline is an SUS316 seamless pipe, one end of the third pipeline is welded at the first hole on the top surface of the vacuum chamber, and the other end of the third pipeline is welded with a CF35 flange connected with a control lever; the first hole is positioned on the top surface of the vacuum chamber close to the front surface side.
17. The apparatus of claim 16, wherein: the operating rod is of a magnetic control transmission structure, and the electronic balance starting/calibrating key is operated by rotating the operating rod outside the vacuum chamber.
18. The apparatus of claim 1, wherein: the fourth pipeline is an SUS316 seamless pipe, one end of the fourth pipeline is welded at the third hole on the top surface of the vacuum chamber, and the other end of the fourth pipeline is welded with a CF35 flange connected with an inflation valve; the third hole may be located on the top surface of the vacuum chamber near the back side or the left or right side surface.
19. The apparatus of claim 18, wherein: the inflation valve is an ultrahigh vacuum manual baffle valve with CF35 converted into KF40, a CF35 flange is butted with a CF35 flange on the fourth pipeline, and the KF40 flange is connected with inert gas.
20. An apparatus for accurately calibrating plasma implant impurities as defined in claim 19, wherein: the inert gas is argon.
21. A method for accurately calibrating plasma implanted impurities is characterized in that: the method comprises the following steps:
step 1, opening a glass panel on the front side of a vacuum chamber, placing an electronic balance into the vacuum chamber, keeping a tray of the electronic balance under a guide pipe, and enabling a display screen to face the glass panel; the voltage converter supplies power to the electronic balance after being connected by the electrode flange;
step 2, placing a sealing ring in a groove of a vacuum chamber fixing seat, closing a glass panel, screwing down and sealing by using a screw, closing an inflation valve and a gate valve, opening an air extraction valve, and starting an air extractor set; when the vacuum degree of the vacuum chamber reaches 5.0 multiplied by 10 -5 When Pa is needed, the gate valve is opened, and the impurity injection distribution system is communicated with the vacuum chamber;
step 3, pressing an electronic balance calibration key by using the operating lever to finish the calibration of the electronic balance; distributing system specific voltage V for impurity implantation 1 Signal triggering, triggering time continuous t 1 The scattered impurities fall into a tray of the electronic balance through a guide pipe, and after the reading of the electronic balance is stable, a control lever is used for pressing an electronic balance start key to record Data 1;
step 4, pressing an electronic balance calibration key by using the operating lever to finish the calibration of the electronic balance; distributing system specific voltage V for impurity implantation 1 Signal triggering, triggering time continuous t 2 The scattered impurities fall into a tray of the electronic balance through a guide pipe, and the electronic balance waits for an electronic dayAfter the flat reading value is stable, pressing an electronic balance start key by using the operating lever to record Data 2;
step 5, pressing an electronic balance calibration key by using the operating lever to finish the calibration of the electronic balance; distributing system specific voltage V for impurity implantation 1 Signal triggering, triggering time is t 3 The scattered impurities fall into a tray of the electronic balance through a guide pipe, and after the reading of the electronic balance is stable, a control lever is used for pressing an electronic balance start key to record Data 3;
step 6, calculating to obtain the voltage V at a specific voltage 1 Under the condition of impurity injection distribution system t n Accurately calibrating data of impurity injection amount in a time period; n is a natural number;
step 7, repeating steps 3, 4, 5 and 6 to obtain the voltage V with the specific voltage n Under the condition that a certain impurity injected into the distribution system is t n Accurately calibrating data of impurity injection amount in a time period;
step 8, closing the gate valve and the air extraction valve, stopping the air extraction unit, opening the air injection valve, injecting inert gas into the vacuum chamber to 0.2MPa, opening the glass panel, and recovering impurities on the tray under the protection of the inert gas atmosphere;
step 9, repeating the steps 2-8; the impurities are calibrated to inject other impurities in the distribution system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911353478.1A CN111063458B (en) | 2019-12-25 | 2019-12-25 | Device and method for accurately calibrating plasma injection impurities |
Applications Claiming Priority (1)
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| CN114620505A (en) * | 2020-12-10 | 2022-06-14 | 新奥科技发展有限公司 | Material conveying device, material injection device and fusion reaction device |
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