CN111061131B - Exposure machine - Google Patents
Exposure machine Download PDFInfo
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- CN111061131B CN111061131B CN201911296532.3A CN201911296532A CN111061131B CN 111061131 B CN111061131 B CN 111061131B CN 201911296532 A CN201911296532 A CN 201911296532A CN 111061131 B CN111061131 B CN 111061131B
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- Prior art keywords
- light
- reflectivity
- exposure machine
- reflection stratum
- sets
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- 238000002310 reflectometry Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000001579 optical reflectometry Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 2
- -1 polyethylene Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000004699 Ultra-high molecular weight polyethylene Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920000785 ultra high molecular weight polyethylene Polymers 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The application discloses an exposure machine. This exposure machine includes: the bearing table is used for bearing the substrate; the lifting rod is arranged at intervals with the bearing table; the reflection stratum, the reflection stratum sets up the first side at the plummer, and the reflection stratum sets up the second side at the lifter, and wherein, the reflectivity that the reflection stratum was set a light is less than the reflectivity that the first side was set a light, and the reflectivity that the reflection stratum was set a light is less than the reflectivity that the second side was set a light, and the first side is the plummer and the relative one side that sets up of mask version, and the second side is the lifter and the relative one side that sets up of mask version. This application is through the first side relative at plummer and mask version to and lifter and the relative second side setting of mask version have less reflectivity's reflection stratum, can reduce the light reflection difference in plummer, lifter and the clearance between the two, improve the exposure homogeneity of base plate.
Description
Technical Field
The application relates to the technical field of display, in particular to an exposure machine.
Background
In the process of manufacturing the display panel, the substrate needs to be exposed multiple times by using an exposure machine. The exposure machine comprises two bearing tables and a lifting rod arranged between the two bearing tables. Wherein a clearance area is arranged between the lifting rod and the adjacent bearing platform.
When the exposure machine is used for exposing the substrate panel through the mask plate, the light reflectivity of the gap area is smaller than the light reflectivity of the bearing platform and the light reflectivity of the lifting rod. This will result in uneven exposure of the substrate.
Therefore, it is necessary to provide an exposure apparatus capable of uniformly exposing a substrate.
Disclosure of Invention
The embodiment of the application provides an exposure machine, can improve the homogeneity that the base plate exposes.
The embodiment of the application provides an exposure machine for expose the base plate through the mask version, it includes:
the bearing table is used for bearing the substrate;
the lifting rod is arranged at intervals with the bearing table;
the reflection stratum, the reflection stratum sets up the first side of plummer, just the reflection stratum sets up the second side of lifter, wherein, the reflectivity that the reflection stratum was set a light is less than the reflectivity that first side was set a light, just the reflectivity that the reflection stratum was set a light is less than the reflectivity that the second side was set a light, first side does the plummer with the relative one side that sets up of mask version, the second side does the lifter with the relative one side that sets up of mask version.
In one embodiment, the reflective layer comprises a multilayer WBAR-film.
In one embodiment, the light reflectivity of the reflective layer is less than 3%.
In one embodiment, the thickness of the emissive layer ranges between 468 nanometers to 570 nanometers.
In one embodiment, the structure of the reflective layer is a porous structure.
In an embodiment, the exposure machine further comprises a reflective strip disposed in a gap between the stage and the lift bar.
In one embodiment, the constituent material of the reflective strips comprises ultra-high molecular weight polyethylene or ceramic.
In one embodiment, the side of the reflective strip opposite to the mask has a black coating.
In one embodiment, the black coating has a light reflectance of between 5% and 7%.
In one embodiment, the lift lever further comprises a widened portion disposed on a side of the lift lever opposite to the susceptor, the widened portion having a width ranging from 0.5 mm to 1 mm.
According to the exposure machine provided by the embodiment of the invention, the reflecting layers with smaller reflectivity are arranged on the first side of the bearing platform opposite to the mask plate and the second side of the lifting rod opposite to the mask plate, so that the light reflection difference of the bearing platform, the lifting rod and the gap between the bearing platform and the lifting rod can be reduced, and the exposure uniformity of the substrate can be improved.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic view of a first structure of an exposure machine according to an embodiment of the present invention.
Fig. 2 is a schematic view of a second structure of the exposure machine according to the embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a reflective layer according to an embodiment of the present invention.
Fig. 4 is a schematic view of a third structure of the exposure machine according to the embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an exposure machine according to an embodiment of the present invention. As shown in fig. 1, the substrate placed on the stage 21 and the lift pins 22 is irradiated with light through the mask 3, and is exposed. The exposure machine 2 includes a stage 21, a lift rod 22, and a reflective layer 23.
The susceptor 21 is used for supporting a substrate. In particular, the substrate is placed on a first side 211 of the carrier table 21 opposite the reticle 3.
The lift lever 22 and the platform 21 are spaced apart from each other with a gap a formed therebetween. In particular, the substrate is also placed on a second side 221 of the lifter 22 opposite the reticle 3. When light is irradiated to the lift pins 22 and the stage 21, the second side 221 of the lift pins 22 and the first side 211 of the stage 21 reflect the light. The light irradiated to the gap a will not be reflected, thereby causing exposure unevenness to the substrate.
In one embodiment, as shown in fig. 2, the lift lever 22 further includes a widened portion 222, the widened portion 222 is disposed on a side of the lift lever 22 opposite to the carrier table 21, and the width of the widened portion 222 ranges from 0.5 mm to 1 mm. This both reduces the width of the gap a and leaves sufficient space for the machine to act.
In order to reduce the reflection difference between the first side 211, the second side 221 and the gap a, in this embodiment, a reflective layer 23 with a smaller reflectivity is disposed on the first side 211 and the second side 221, wherein the reflectivity of the reflective layer 23 to light is smaller than that of the first side 211 to light, and the reflectivity of the reflective layer 23 to light is smaller than that of the second side 221 to light. By reducing the reflectivity of the susceptor 21 and the lift pins 22, the reflection difference between the susceptor 21, the lift pins 22, and the gap a can be reduced.
In one embodiment, the reflective layer 23 comprises a multilayer WBAR-film. This makes it possible to make the reflectance of the reflective layer 23 lower than 3%. Preferably, the reflective layer 23 may comprise a six-layer WBAR-film, which may not only provide sufficient support to the substrate, but also provide sufficiently low reflectivity. Further, the reflective layer 23 has a thickness ranging from 468 nm to 570 nm.
As shown in fig. 3, the structure of the reflective layer 23 is a porous structure, such as a polygonal hole structure having a plurality of triangles, quadrangles, pentagons, and the like. The porous reflective layer 23 not only provides a balanced support for the substrate disposed thereon, but also does not damage the substrate due to uneven arrangement. Further, the polygonal holes may absorb more light, thereby reducing the reflectivity of the reflective layer 23.
In one embodiment, as shown in fig. 4, the exposure machine 2 further comprises a reflective strip 24. The reflection bar 24 is disposed in a gap between the carrier table 21 and the lift pins 22. The reflection strip 24 may be connected to the bearing table 21 or the lifting rod 22.
As shown in fig. 4, one end 241 of the reflective strip 24 is fixed to one side of the supporting platform 21, and the other end 242 is retractable. When the substrate is exposed using the exposure machine 2, the reflective strips 24 may be spread out to block light incident into the gap a. When the exposure of the substrate using the exposure machine 2 is stopped, the reflection bars 24 may be contracted.
Wherein, the constituent material of the reflective strip 24 includes ultra-high molecular polyethylene or ceramic. In one embodiment, the side of the reflective strip 24 opposite to the reticle 3 has a black coating 241. The black coating 241 has a reflectivity of between 5% and 7%. This can improve the reflectance of light in the gap a, and further reduce the difference in reflectance of light in the stage 21, the lift lever 22, and the gap a.
According to the exposure machine provided by the embodiment of the invention, the reflecting layers with smaller reflectivity are arranged on the first side of the bearing platform opposite to the mask plate and the second side of the lifting rod opposite to the mask plate, so that the light reflection difference of the bearing platform, the lifting rod and the gap between the bearing platform and the lifting rod can be reduced, and the exposure uniformity of the substrate can be improved.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The exposure machine provided by the embodiment of the present application is described in detail above, and a specific example is applied in the description to explain the principle and the implementation of the present application, and the description of the above embodiment is only used to help understanding the technical scheme and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (8)
1. An exposure machine for exposing a substrate through a mask, comprising:
the bearing table is used for bearing the substrate;
the lifting rod is arranged at intervals with the bearing table;
the reflection stratum, the reflection stratum sets up the first side of plummer, just the reflection stratum sets up the second side of lifter, wherein, the reflectivity that the reflection stratum was set to light is less than the reflectivity that first side was set to light, just the reflectivity that the reflection stratum was set to light is less than the reflectivity that the second side was set to light, first side is the plummer with the relative one side that sets up of mask version, the second side is the lifter with the relative one side that sets up of mask version, the reflection stratum includes multilayer WBAR-membrane, the light reflectivity of reflection stratum is less than 3%.
2. Exposure machine according to claim 1, characterised in that the thickness of the reflecting layer ranges between 468 and 570 nm.
3. Exposure machine according to claim 1, characterised in that the structure of the reflecting layer is a porous structure.
4. Exposure machine according to claim 1, further comprising a reflective strip arranged in a gap between the carrier table and the lifting bar.
5. Exposure machine according to claim 4, characterised in that the constituent material of the reflective strips comprises ultra high molecular polyethylene or ceramic.
6. Exposure machine according to claim 4, characterised in that the side of the reflection strip opposite the reticle is provided with a black coating.
7. Exposure machine according to claim 6, characterised in that the light reflectivity of the black coating is between 5% and 7%.
8. The exposure apparatus according to claim 1, wherein the lift lever further comprises a widened portion provided on a side of the lift lever opposite to the stage, the widened portion having a width ranging from 0.5 mm to 1 mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201911296532.3A CN111061131B (en) | 2019-12-16 | 2019-12-16 | Exposure machine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201911296532.3A CN111061131B (en) | 2019-12-16 | 2019-12-16 | Exposure machine |
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Publication Number | Publication Date |
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CN111061131A CN111061131A (en) | 2020-04-24 |
CN111061131B true CN111061131B (en) | 2022-04-05 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003051534A (en) * | 2001-08-07 | 2003-02-21 | Canon Inc | Wafer holder, exposure device and device production method |
CN104298081A (en) * | 2014-11-05 | 2015-01-21 | 京东方科技集团股份有限公司 | Exposure machine |
CN105045048A (en) * | 2015-09-16 | 2015-11-11 | 京东方科技集团股份有限公司 | Exposure base platform and exposure device |
CN106773553A (en) * | 2017-03-06 | 2017-05-31 | 重庆京东方光电科技有限公司 | Bogey and exposure sources |
CN110554576A (en) * | 2018-05-30 | 2019-12-10 | 佳能株式会社 | Substrate holding device, exposure device, and article manufacturing method |
JP2019211755A (en) * | 2018-05-30 | 2019-12-12 | キヤノン株式会社 | Substrate holding device, exposure device and method for producing article |
-
2019
- 2019-12-16 CN CN201911296532.3A patent/CN111061131B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003051534A (en) * | 2001-08-07 | 2003-02-21 | Canon Inc | Wafer holder, exposure device and device production method |
CN104298081A (en) * | 2014-11-05 | 2015-01-21 | 京东方科技集团股份有限公司 | Exposure machine |
CN105045048A (en) * | 2015-09-16 | 2015-11-11 | 京东方科技集团股份有限公司 | Exposure base platform and exposure device |
CN106773553A (en) * | 2017-03-06 | 2017-05-31 | 重庆京东方光电科技有限公司 | Bogey and exposure sources |
CN110554576A (en) * | 2018-05-30 | 2019-12-10 | 佳能株式会社 | Substrate holding device, exposure device, and article manufacturing method |
JP2019211755A (en) * | 2018-05-30 | 2019-12-12 | キヤノン株式会社 | Substrate holding device, exposure device and method for producing article |
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