CN111061102B - Array substrate and display panel - Google Patents
Array substrate and display panel Download PDFInfo
- Publication number
- CN111061102B CN111061102B CN201911304038.7A CN201911304038A CN111061102B CN 111061102 B CN111061102 B CN 111061102B CN 201911304038 A CN201911304038 A CN 201911304038A CN 111061102 B CN111061102 B CN 111061102B
- Authority
- CN
- China
- Prior art keywords
- layer
- array substrate
- light absorption
- cut
- passivation layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 73
- 230000031700 light absorption Effects 0.000 claims abstract description 77
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims abstract description 54
- 238000002161 passivation Methods 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims description 16
- 238000000059 patterning Methods 0.000 claims description 4
- 238000003698 laser cutting Methods 0.000 abstract description 18
- 238000005520 cutting process Methods 0.000 abstract description 13
- 239000012528 membrane Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 127
- 238000012360 testing method Methods 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007849 functional defect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present disclosure provides an array substrate and a display panel. The array substrate comprises a substrate and a short-circuit bar area arranged on one side edge of the substrate, wherein the short-circuit bar area comprises a first metal layer, a grid electrode insulating layer, a light absorption layer and a passivation layer which are arranged in a stacked mode. Wherein the first metal layer comprises a patterned shorting bar test line, and the light absorption layer is patterned to form a light absorption part. The short-circuit bar test wire is provided with a part to be cut, and the light absorbing part and the part to be cut of the short-circuit bar test wire are arranged oppositely. Utilize the light absorption portion to the high characteristic of light absorptivity, promote the utilization ratio to laser in the laser cutting to because of in solving the laser cutting the cutting that leads to of organic membrane in the passivation layer is bad.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to an array substrate and a display panel.
Background
In the conventional liquid crystal display panel, in order to reduce the size of the bonding region on the array substrate and achieve the effect of realizing a larger display region, a Chip On Film (COF) bonding technology is generally adopted. That is, a Flexible Printed Circuit (FPC) having a chip (IC) is bonded to a bonding lead (lead) region of the liquid crystal panel array substrate, thereby realizing signal transmission.
In order to improve the yield of the lcd panel and prevent the defective products from flowing into the module or the client, a lighting inspection is generally performed after the assembly is completed. By inputting various analog signals, functional defects in display are checked. In order to increase the detection rate, a short-circuit bar (shorting bar) mode is generally adopted for human eye inspection. As shown in fig. 1, the shorting bar SC of the shorting bar area SB in the display panel 8000 is connected to a shorting bar test line SD, and the shorting bar test line SD is connected to a bonding wire BD of a bonding wire area BL, and is generally disposed in the peripheral area of the display panel. After the detection is completed, the short circuit bar SC and the related circuits need to be cut off to prevent the signal transmission of the actual product from being affected. The Laser cut (Laser cut) mode is usually adopted to cut off the shorting bar and the related circuits from the area LC to be cut of the shorting bar test wire SD.
However, in the conventional liquid crystal display panel, in order to improve the photoresist coating characteristics in the post-process, increase the contrast, and reduce the parasitic capacitance, an organic insulating Film (PFA) is usually used as an insulating protective layer instead of a conventional silicon nitride (SiNx) Film or a silicon oxide (SiOx) Film. However, the organic insulating film has a high transmittance, and the photo-thermal absorption is much lower than that of the inorganic film, and there is a problem that a cut remains when laser cutting is performed, that is, a part of the shorting bar test line is not cut, and thus a scratch phenomenon is easily caused when an Electrostatic Discharge (ESD) test is performed.
Therefore, the problem of laser cutting residue in the short-circuit bar area of the conventional display panel needs to be solved.
Disclosure of Invention
The disclosure provides an array substrate and a display panel, which are used for relieving the technical problem of laser cutting residue in a short-circuit bar area of the conventional display panel.
In order to solve the above problems, the technical solution provided by the present disclosure is as follows:
the embodiment of the disclosure provides an array substrate, which comprises a substrate and a shorting bar area arranged at one side edge of the substrate, wherein the shorting bar area comprises a first metal layer, a gate insulation layer, a light absorption layer and a passivation layer. The first metal layer is arranged on the substrate and comprises a short-circuit bar test line formed by patterning. The grid electrode insulating layer covers the first metal layer. The light absorption layer is arranged on the gate insulating layer and is patterned to form a light absorption part. The passivation layer covers the light absorption layer. The short circuit rod test wire is provided with a part to be cut, and the light absorption part and the part to be cut of the short circuit rod test wire are arranged oppositely.
In the array substrate provided by the embodiment of the disclosure, the width of the light absorption part is greater than that of the shorting bar test line.
In the array substrate provided by the embodiment of the disclosure, the width of the light absorption part is 3 micrometers wider than that of the shorting bar test line.
In the array substrate provided by the embodiment of the present disclosure, the length of the light absorption part is equal to the length of the part of the shorting bar test line to be cut.
In the array substrate provided by the embodiment of the disclosure, the length of the light absorption part is greater than that of a part to be cut of the shorting bar test line.
In the array substrate provided by the embodiment of the present disclosure, the array substrate further includes a second metal layer, the light absorption layer and the second metal layer are disposed in the same layer, and the light absorption layer is formed by the second metal layer.
In the array substrate provided by the embodiment of the present disclosure, the array substrate further includes a second metal layer, and the light absorption layer and the second metal layer are made of different materials.
In the array substrate provided by the embodiment of the present disclosure, the passivation layer includes a first passivation layer and a second passivation layer, the second passivation layer overlies the first passivation layer, and the first passivation layer and the second passivation layer are made of different materials.
In the array substrate provided by the embodiment of the present disclosure, the material of the first passivation layer is an inorganic insulating film, and the material of the second passivation layer is an organic insulating film.
The embodiment of the disclosure further provides a display panel, which includes the array substrate provided in one of the foregoing embodiments.
The beneficial effects of this revelation do: in the array substrate and the display panel, the light absorption layer is arranged in the short-circuit bar area of the array substrate, and the light absorption part of the light absorption layer is arranged above the part to be cut of the short-circuit bar test wire. Utilize light absorption portion is to the characteristic that the absorptivity is high, has promoted the utilization ratio to laser in the laser cutting, has solved in the laser cutting because of the cutting that leads to of organic film in the passivation layer remains the problem, has alleviated the damage phenomenon because of cutting remains the initiation when preventing static test.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic view of a prior art display panel shorting bar area;
FIG. 2 is a schematic side view of a film structure in a shorting bar area of an array substrate according to an embodiment of the disclosure;
FIG. 3 is a schematic bottom view of a first structure of a shorting bar area according to an embodiment of the disclosure;
FIG. 4 is a cut-away bottom view of a first structure of a shorting bar area according to an embodiment of the present disclosure;
FIG. 5 is a schematic bottom view of a second structure of a shorting bar area cut according to an embodiment of the disclosure;
FIG. 6 is a graph illustrating laser light absorption rate comparison for various metals according to an embodiment of the present disclosure;
FIG. 7 is a bottom view of a third structure of a shorting bar area according to an embodiment of the disclosure;
fig. 8 is a schematic bottom view of a third structure of a shorting bar area cut according to an embodiment of the disclosure.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings, which illustrate specific embodiments in which the disclosure may be practiced. Directional phrases used in this disclosure, such as [ upper ], [ lower ], [ front ], [ back ], [ left ], [ right ], [ inner ], [ outer ], [ side ], etc., refer only to the directions of the attached drawings. Accordingly, the directional terms used are used for the purpose of illustration and understanding of the present disclosure, and are not used to limit the present disclosure. In the drawings, elements having similar structures are denoted by the same reference numerals.
In one embodiment, as shown in fig. 2, an array substrate 100 is provided, which includes a substrate 10 and a shorting bar region 20 disposed at one side edge of the substrate 10, wherein the shorting bar region 20 includes a first metal layer, a gate insulating layer 22, a light absorbing layer, and a passivation layer (wherein the first metal layer and the light absorbing layer only show a patterned pattern in fig. 2, and the passivation layer includes a first passivation layer 24 and a second passivation layer 25 in fig. 2). The first metal layer is disposed on the substrate 10 and includes a patterned shorting bar test line 211. The gate insulating layer 22 covers the first metal layer. The light absorbing layer is disposed on the gate insulating layer 22, and the light absorbing portion 231 is patterned. The passivation layer covers the light absorption layer. The short circuit bar test line 211 is provided with a part to be cut, and the light absorption part 231 is opposite to the part to be cut of the short circuit bar test line 211.
Specifically, the passivation layer includes a first passivation layer 24 and a second passivation layer 25, the second passivation layer 25 covers the first passivation layer 24, and the first passivation layer 24 and the second passivation layer 25 are made of different materials.
Further, the material of the first passivation layer 24 is an inorganic insulating film, such as one or more of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiNO), and other organic substances. The material of the second passivation layer 25 is an organic insulating film.
It should be noted that the portion to be cut of the shorting bar testing line 211 refers to a portion that needs to be cut off when the shorting bar and the related circuit are disconnected.
Further, the light absorbing portion 231 is made of metal, and the metal has a high light absorption rate for laser light in laser cutting. The absorption of laser light by each metal will be described in detail below.
In this embodiment, the light absorbing portion 231 of the shorting bar area 20 is disposed opposite to the portion to be cut of the shorting bar test line 211, and the characteristic of high light absorption of the light absorbing portion 231 is utilized to solve the problem of cutting residue caused by high transmittance and low light absorption of the organic insulating film in the passivation layer when the shorting bar area 20 is cut off by laser cutting.
In one embodiment, as in the array substrate 100 shown in fig. 2, the width of the light absorption part 231 is greater than the width of the shorting bar test line 211.
Specifically, the width of the light absorption portion 231 is 3 micrometers wider than the width of the shorting bar test line 211, for example, the width of the shorting bar test line 211 is 12 micrometers, and the width of the light absorption portion 231 is 15 micrometers.
Further, the length of the light absorption part 231 is equal to the length of the portion of the shorting bar test line 211 to be cut.
Specifically, as shown in fig. 3, which is a schematic view of a bottom view of the shorting bar area 20 in the array substrate 100 shown in fig. 2, in fig. 3, the light absorption part 231 is disposed opposite to a portion to be cut of the shorting bar testing line 211, a width L2 of the light absorption part 231 is greater than a width L1 of the shorting bar testing line 211, and a length S2 of the light absorption part 231 is equal to a length S1 of the portion to be cut of the shorting bar testing line 211.
Specifically, the parts to be cut of the plurality of shorting bar test lines 211 are grouped together to form a region to be cut 212, such as the region to be cut 212 in fig. 3.
Specifically, since the width L2 of the light absorption portion 231 is greater than the width L1 of the shorting bar test line 211, and the length S2 of the light absorption portion 231 is equal to the length S1 of the portion of the shorting bar test line 211 to be cut, the portion of the shorting bar test line 211 to be cut is completely covered by the light absorption portion 231. When laser cutting is performed, due to the high absorptivity of light by the light absorption part 231, the portion of the shorting bar test line 211 to be cut, which covers below, is completely cut, forming a schematic diagram after the cutting is completed as shown in fig. 4, the shorting bar test line 211 in the region 212 to be cut is completely cut, and the cutting residue caused by the inorganic insulating film in the passivation layer is solved.
Further, the length S2 of the light absorption portion 231 may also be slightly smaller than the length of the portion to be cut of the shorting bar testing line 211, and the schematic structure shown in fig. 5 is formed after the laser cutting is completed. In fig. 5, a part of the shorting bar test line 211 is still present in the region 212 to be cut, but the shorting bar test line 211 is cut off, so that the purpose of disconnecting the shorting bar and the related circuit is achieved, and the cutting residue caused by the inorganic insulating film in the passivation layer is also solved.
Specifically, the array substrate 100 further includes a second metal layer, the light absorption layer and the second metal layer are disposed in the same layer, and the light absorption layer is formed by the second metal layer.
It should be noted that the second metal layer is not shown in each drawing, and the second metal layer disclosed in the present disclosure is a conventional second metal layer in the array substrate 100, that is, a second metal layer generally used for forming a source/drain and a data line.
Specifically, the light absorbing layer and the second metal layer are prepared in the same process, and the light absorbing portion 231 of the light absorbing layer is formed at the same time when the source/drain and the data line are formed in the second metal layer.
Further, the material of the second metal layer may be other metals such as copper. Fig. 6 is a schematic diagram showing the relationship between the laser absorption rate and the wavelength of each metal, including copper (Cu), gold (Au), nickel (Ni), iron (Fe), and aluminum (Al). As can be seen from the figure, each metal has a high light absorption rate at a laser wavelength of 532 nm used in laser cutting, in which the light absorption rate of metal aluminum is low compared to that of other metals. The light absorption of copper metal is high.
Further, the light absorbing layer is formed of the second metal layer, that is, the material of the light absorbing part 231 is copper. The light absorbing part 231 also has a high light absorption rate due to the high light absorption rate of the metal copper. When laser cutting is adopted, the laser can be used for cutting the organic insulating layer of the passivation layer more easily.
In one embodiment, unlike the above-described embodiments, the length S2 'of the light absorption part 231' is greater than the length S1 of the portion of the shorting bar test line 211 to be cut. As shown in fig. 7, the length S2' of the light absorption part 231' exceeds the region 212 to be cut, and the width L2 of the light absorption part 231' is greater than the width L1 of the shorting bar test line 211.
Specifically, since the width L2 of the light absorption portion 231 'is greater than the width L1 of the shorting bar test line 211, and the length S2' of the light absorption portion 231 'is greater than the length S1 of the portion of the shorting bar test line 211 to be cut, the portion of the shorting bar test line 211 to be cut is completely covered by the light absorption portion 231'. When the laser cutting is performed, due to the high light absorption rate of the light absorption part 231', the portion of the shorting bar test line 211 to be cut, which covers below, is completely cut, forming a schematic diagram after the cutting is completed as shown in fig. 8, the shorting bar test line 211 in the region 212 to be cut is completely cut, and the cutting residue caused by the inorganic insulating film in the passivation layer is solved.
Specifically, the light absorption layer and the second metal layer are arranged at the same layer, but the light absorption layer and the second metal layer are made of different materials.
Furthermore, the light absorption layer is prepared in the short circuit bar area by adopting a metal material different from the material of the second metal layer while the second metal layer is prepared.
Further, the light absorption layer may also be disposed at a different layer from the second metal layer, for example, the light absorption layer is formed in the shorting bar region at the same time when the active layer is formed.
Further, when the light absorbing layer and the second metal layer are disposed in different layers, the metal material of the light absorbing layer may be the same as or different from the material of the second metal layer.
In the present disclosure, the light absorbing layer is made of a metal material, but the present disclosure is not limited thereto, and any material having a good light absorption rate for the laser used in the laser cutting may be used as the material of the light absorbing layer.
In an embodiment, a liquid crystal display panel is provided, which includes an array substrate according to one of the foregoing embodiments, a color filter substrate disposed opposite to the array substrate, and a plurality of liquid crystal molecules located between the array substrate and the color filter substrate.
In an embodiment, an OLED display panel is provided, which includes an array substrate, a light emitting function layer disposed on the array substrate, and an encapsulation layer disposed on the light emitting function layer in one of the foregoing embodiments.
In an embodiment, a method for manufacturing a display panel is provided, which is described by taking a liquid crystal display panel in the above embodiment as an example, and includes the following steps:
step S1: the method comprises the steps of providing a substrate, preparing a first metal layer on the substrate, and patterning the first metal layer to obtain a short-circuit bar test line in a short-circuit bar area;
step S2: a light absorption part preparation step, which comprises the steps of sequentially preparing a gate insulating layer, an active layer, an interlayer insulating layer and a second metal layer on the first metal layer, and patterning the second metal layer to form a light absorption part in the short-circuit bar area;
and step S3: the method comprises the following steps of forming an array substrate, wherein a first passivation layer, an RGB (red, green and blue) color film layer, a second passivation layer, a pixel electrode layer and an alignment film layer are sequentially prepared on a second metal layer to finish the preparation of the array substrate;
and step S4: the step of assembling, which comprises providing a color film substrate and assembling the color film substrate with the array substrate;
step S5: and a liquid crystal molecule injection step, which comprises injecting a plurality of liquid crystal molecules between the array substrate and the color film substrate which are paired.
Specifically, in step S1, the first metal layer is patterned to obtain a shorting bar test line in the shorting bar region, and a gate line is formed in the display region of the array substrate.
Specifically, in step S2, the second metal layer is patterned to form a light absorbing portion in the shorting bar region, and a source electrode, a drain electrode, and a data line are formed in the display region of the array substrate.
Further, the width of the light absorption part is larger than that of the shorting bar test line, and the length of the light absorption part is larger than that of a part to be cut of the shorting bar test line.
Further, because the width of the light absorption part is greater than the width of the short circuit bar test line, and the length of the light absorption part is greater than the length of the part to be cut of the short circuit bar test line, the light absorption part can completely cover the part to be cut of the short circuit bar test line. When laser cutting is carried out, due to the high absorptivity of the light absorption part to light, the part to be cut of the short circuit bar test line covered below is cut off, and cutting residues caused by an inorganic insulating film in the passivation layer are solved.
Specifically, in step S3, the prepared Array substrate is a color filter on Array (COA) substrate. The disclosure is not limited thereto, and the design of the shorting bar structure of the disclosure can be applied to various array substrates.
According to the above embodiments:
the array substrate comprises a substrate and a short-circuit bar area arranged on one side edge of the substrate, wherein the short-circuit bar area comprises a first metal layer, a grid electrode insulating layer, a light absorption layer and a passivation layer which are arranged in a stacking mode. The first metal layer comprises patterned shorting bar test lines, and the light absorption layer is patterned to form light absorption parts. The light absorption part is arranged opposite to the part to be cut of the short circuit bar test wire. Utilize light absorption portion is to the characteristic that the absorptivity is high, has promoted the utilization ratio to laser in the laser cutting, has solved in the laser cutting because of the cutting that leads to of organic film in the passivation layer remains the problem, has alleviated the damage phenomenon because of cutting remains the initiation when preventing static test.
In summary, although the present disclosure has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present disclosure, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure, so that the scope of the present disclosure is defined by the appended claims.
Claims (10)
1. An array substrate, comprising a substrate and a shorting bar region disposed at an edge of one side of the substrate, wherein the shorting bar region comprises:
the first metal layer is arranged on the substrate and comprises a short circuit bar test line formed in a patterning mode;
a gate insulating layer overlying the first metal layer;
a light absorption layer disposed on the gate insulating layer and patterned to form a light absorption part; and
a passivation layer overlying the light absorbing layer;
the short circuit bar test wire is provided with a part to be cut, and the light absorption part is arranged opposite to the part to be cut of the short circuit bar test wire; the part to be cut of the plurality of short circuit bar test wires forms a region to be cut, and the light absorbing parts are arranged at intervals in the region to be cut.
2. The array substrate of claim 1, wherein the light absorbing portion has a width greater than a width of the shorting bar test line.
3. The array substrate of claim 2, wherein the light absorbing portions have a width that is 3 microns wider than a width of the shorting bar test line.
4. The array substrate according to claim 2, wherein the length of the light absorption part is equal to the length of the portion of the shorting bar test line to be cut.
5. The array substrate of claim 2, wherein the length of the light absorption part is greater than the length of the portion of the shorting bar test line to be cut.
6. The array substrate of claim 1, further comprising a second metal layer, wherein the light absorbing layer and the second metal layer are disposed in the same layer, and the light absorbing layer is formed of the second metal layer.
7. The array substrate of claim 1, further comprising a second metal layer, wherein the light absorbing layer and the second metal layer are made of different materials.
8. The array substrate of claim 1, wherein the passivation layer comprises a first passivation layer and a second passivation layer, the second passivation layer overlies the first passivation layer, and the first passivation layer and the second passivation layer are different materials.
9. The array substrate of claim 8, wherein the first passivation layer is made of an inorganic insulating film and the second passivation layer is made of an organic insulating film.
10. A display panel comprising the array substrate according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911304038.7A CN111061102B (en) | 2019-12-17 | 2019-12-17 | Array substrate and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911304038.7A CN111061102B (en) | 2019-12-17 | 2019-12-17 | Array substrate and display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111061102A CN111061102A (en) | 2020-04-24 |
| CN111061102B true CN111061102B (en) | 2022-12-23 |
Family
ID=70302065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911304038.7A Active CN111061102B (en) | 2019-12-17 | 2019-12-17 | Array substrate and display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111061102B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111007686A (en) * | 2019-11-14 | 2020-04-14 | Tcl华星光电技术有限公司 | Array substrate, display panel and preparation method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0487391A (en) * | 1990-07-31 | 1992-03-19 | Fujitsu Ltd | Thin film circuit board and manufacture thereof |
| JPH05235556A (en) * | 1992-02-26 | 1993-09-10 | Fujitsu Ltd | Pattern cut structure of thin film substrate |
| KR20010082834A (en) * | 2000-02-21 | 2001-08-31 | 구본준, 론 위라하디락사 | Apparatus of Liquid Crystal Display and Fabricating Method thereof |
| CN102282485A (en) * | 2009-08-06 | 2011-12-14 | 住友化学株式会社 | Method for manufacturing polarizing plate |
| CN107015387A (en) * | 2017-05-19 | 2017-08-04 | 深圳市华星光电技术有限公司 | A kind of measurement circuit for array base palte |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3096009B2 (en) * | 1996-10-31 | 2000-10-10 | 松下電器産業株式会社 | LCD panel |
| JP2000098425A (en) * | 1998-09-22 | 2000-04-07 | Hitachi Ltd | Active matrix substrate and liquid crystal display device using this substrate |
| US6930732B2 (en) * | 2000-10-11 | 2005-08-16 | Lg.Philips Lcd Co., Ltd. | Array substrate for a liquid crystal display |
| TW200815885A (en) * | 2006-09-29 | 2008-04-01 | Chunghwa Picture Tubes Ltd | Active device array substrate and cutting method thereof |
| JP5288095B2 (en) * | 2008-02-07 | 2013-09-11 | ソニー株式会社 | Thin film transistor substrate, defect repair method thereof, and display device |
| JP2010232516A (en) * | 2009-03-27 | 2010-10-14 | Kyocera Corp | Wiring board and method for manufacturing the same |
-
2019
- 2019-12-17 CN CN201911304038.7A patent/CN111061102B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0487391A (en) * | 1990-07-31 | 1992-03-19 | Fujitsu Ltd | Thin film circuit board and manufacture thereof |
| JPH05235556A (en) * | 1992-02-26 | 1993-09-10 | Fujitsu Ltd | Pattern cut structure of thin film substrate |
| KR20010082834A (en) * | 2000-02-21 | 2001-08-31 | 구본준, 론 위라하디락사 | Apparatus of Liquid Crystal Display and Fabricating Method thereof |
| CN102282485A (en) * | 2009-08-06 | 2011-12-14 | 住友化学株式会社 | Method for manufacturing polarizing plate |
| CN107015387A (en) * | 2017-05-19 | 2017-08-04 | 深圳市华星光电技术有限公司 | A kind of measurement circuit for array base palte |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111061102A (en) | 2020-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10573833B2 (en) | Flexible display substrate and method for manufacturing the same, and flexible display device | |
| JP5239368B2 (en) | Array substrate and display device | |
| KR100728853B1 (en) | Electrode wiring substrate and display device | |
| US7113246B2 (en) | Image display having internal wiring with multi-layer structure and manufacturing method thereof having particular wiring connection | |
| US6338989B1 (en) | Array substrate for use in liquid crystal display device and method of manufacturing the same | |
| KR100668567B1 (en) | Substrate for display device, manufacturing method for same and display device | |
| KR100470208B1 (en) | Liquid crystal display apparatus of horizontal electronic field applying type and fabricating method thereof | |
| KR20030016534A (en) | liquid crystal display devices | |
| KR20030026831A (en) | Liquid crystal display device | |
| US6429908B1 (en) | Method for manufacturing a gate of thin film transistor in a liquid crystal display device | |
| CN111061102B (en) | Array substrate and display panel | |
| US8536576B2 (en) | Array substrate and display device | |
| KR100485506B1 (en) | Liquid crystal display device and method for manufacturing the same | |
| US11977300B2 (en) | Display panel and display device | |
| CN114639701A (en) | Transparent display device | |
| KR100942265B1 (en) | LCD with color-filter on TFT and method of fabricating of the same | |
| CN110880288A (en) | Display device and method for manufacturing the same | |
| US12016195B2 (en) | Display device including corner display having cutouts and dams | |
| US20220131113A1 (en) | Display device and method of manufacturing the display device | |
| KR101022807B1 (en) | Array Substrate for Use in Reflective LCD and Method of Fabricating the Same | |
| JP3756326B2 (en) | Liquid crystal display | |
| JP5500537B2 (en) | Liquid crystal display device and manufacturing method thereof | |
| JP2005208680A (en) | Active matrix type liquid crystal display | |
| TWI388044B (en) | Bonding pad structure and liquid crystal display panel | |
| KR20030003595A (en) | Liquid Crystal Display Device and Fabricating Method Thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |