CN111051992A - 光刻方法和设备 - Google Patents
光刻方法和设备 Download PDFInfo
- Publication number
- CN111051992A CN111051992A CN201880057965.0A CN201880057965A CN111051992A CN 111051992 A CN111051992 A CN 111051992A CN 201880057965 A CN201880057965 A CN 201880057965A CN 111051992 A CN111051992 A CN 111051992A
- Authority
- CN
- China
- Prior art keywords
- sensor
- aperture
- radiation
- apodization
- measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 52
- 230000005855 radiation Effects 0.000 claims abstract description 114
- 238000005259 measurement Methods 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims description 47
- 238000005286 illumination Methods 0.000 claims description 24
- 230000015654 memory Effects 0.000 claims description 8
- 238000004590 computer program Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 16
- 230000008569 process Effects 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 9
- 210000001747 pupil Anatomy 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 238000007689 inspection Methods 0.000 description 7
- 230000001419 dependent effect Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000005381 magnetic domain Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP17189827 | 2017-09-07 | ||
EP17189827.3 | 2017-09-07 | ||
PCT/EP2018/073173 WO2019048295A1 (en) | 2017-09-07 | 2018-08-29 | LITHOGRAPHIC METHOD AND APPARATUS |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111051992A true CN111051992A (zh) | 2020-04-21 |
Family
ID=59811198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880057965.0A Pending CN111051992A (zh) | 2017-09-07 | 2018-08-29 | 光刻方法和设备 |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR102535147B1 (ko) |
CN (1) | CN111051992A (ko) |
NL (1) | NL1042976A (ko) |
WO (1) | WO2019048295A1 (ko) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5659168A (en) * | 1995-11-13 | 1997-08-19 | Eastman Kodak Company | Radiometric calibration system |
US20060091324A1 (en) * | 2004-10-29 | 2006-05-04 | Asml Netherlands B.V. | Optical component, optical system including such an optical component, lithographic apparatus, method of correcting apodization in an optical system, device manufacturing method, and device manufactured thereby |
CN1900828A (zh) * | 2005-07-22 | 2007-01-24 | 佳能株式会社 | 曝光装置及方法 |
US20130271636A1 (en) * | 2012-04-16 | 2013-10-17 | Asml Netherlands B.V. | Lithographic Method and Apparatus |
CN205845913U (zh) * | 2016-07-26 | 2016-12-28 | 南通富士通微电子股份有限公司 | 一种用于晶圆边缘的曝光结构 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5561290A (en) * | 1995-06-09 | 1996-10-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Optical detector calibrator system |
WO1997037379A1 (en) * | 1996-04-03 | 1997-10-09 | Advanced Micro Devices, Inc. | In-situ sensor for the measurement of deposition on etching chamber walls |
US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
NL2003806A (en) * | 2008-12-15 | 2010-06-16 | Asml Netherlands Bv | Method for a lithographic apparatus. |
US9091650B2 (en) * | 2012-11-27 | 2015-07-28 | Kla-Tencor Corporation | Apodization for pupil imaging scatterometry |
-
2018
- 2018-08-29 CN CN201880057965.0A patent/CN111051992A/zh active Pending
- 2018-08-29 KR KR1020207006698A patent/KR102535147B1/ko active IP Right Grant
- 2018-08-29 WO PCT/EP2018/073173 patent/WO2019048295A1/en active Application Filing
- 2018-09-03 NL NL1042976A patent/NL1042976A/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5659168A (en) * | 1995-11-13 | 1997-08-19 | Eastman Kodak Company | Radiometric calibration system |
US20060091324A1 (en) * | 2004-10-29 | 2006-05-04 | Asml Netherlands B.V. | Optical component, optical system including such an optical component, lithographic apparatus, method of correcting apodization in an optical system, device manufacturing method, and device manufactured thereby |
CN1900828A (zh) * | 2005-07-22 | 2007-01-24 | 佳能株式会社 | 曝光装置及方法 |
US20130271636A1 (en) * | 2012-04-16 | 2013-10-17 | Asml Netherlands B.V. | Lithographic Method and Apparatus |
CN205845913U (zh) * | 2016-07-26 | 2016-12-28 | 南通富士通微电子股份有限公司 | 一种用于晶圆边缘的曝光结构 |
Also Published As
Publication number | Publication date |
---|---|
KR102535147B1 (ko) | 2023-05-23 |
KR20200030117A (ko) | 2020-03-19 |
WO2019048295A1 (en) | 2019-03-14 |
NL1042976A (en) | 2019-03-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |