CN111048623A - 一种提高方阻均匀性的发射极制备方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 17
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 18
- 238000005234 chemical deposition Methods 0.000 claims description 14
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 235000013842 nitrous oxide Nutrition 0.000 claims description 4
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000007865 diluting Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 abstract description 12
- PKPBCVSCCPTDIU-UHFFFAOYSA-N B.P Chemical compound B.P PKPBCVSCCPTDIU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
本发明公开了一种提高方阻均匀性的发射极制备方法，硅片预处理后在硅片表面沉积一层掺磷(硼)氧化硅层；PN结制备时，利用扩散炉不添加掺杂气源进行高温扩散。本发明通过在硅片表面沉积一层掺磷(硼)的氧化硅层，此过程中，形成的氧化硅层具有优异的均匀性，为后续步骤提供了更加均匀的前提，使用扩散炉进行高温扩散，不添加掺杂气源，利用均匀的掺磷(硼)氧化硅层，实现高均匀性方阻。
Description
技术领域
本发明具体涉及一种提高方阻均匀性的发射极制备方法。
背景技术
随着太阳能电池技术的发展，高方阻的发射区制备技术越来越受到高效太阳能电池研发的重视。
其中PN结的制备是最关键的步骤之一，对于晶硅电池的光电转换效率起到了非常重要的作用。目前行业的趋势是逐步提高扩散方阻，进一步提升电池效率。
专利CN104319308A公开了一种提高方阻扩散均匀性的方法，该专利使用缓冲层降低扩散速度，专利CN207282513U公开了一种提高方阻均匀性的方法，该专利通过改善扩散炉结构来提高气体分布均匀性，但是随着硅片尺寸逐渐增大，需要更多的考虑由此带来的不利影响。
发明内容
本发明的目的是为了解决以上现有技术的不足，提出了一种提高方阻均匀性的发射极制备方法，包括以下步骤：
(1)硅片预处理：对硅片进行清洗和减反射表面制备；
(2)磷(硼)硅玻璃层沉积；
(3)PN结制备：在P型硅正面进行扩散，形成N型发射极；在N型硅正面进行扩散，形成P型发射极；
(4)表面钝化：对硅片进行热退火，然后在硅片背面进行氧化铝和氮化硅的膜层制备，在硅片正面和背面进行氮化硅、氮氧化硅、二氧化硅、氧化铝、非晶硅、透明导电层等减反射膜的制备；
(5)金属化：在硅片表面进行背电极、背电场以及正面电极制备，并进行固化、烧结，完成电池制备。
优选地，步骤(2)中，掺磷(硼)氧化硅层使用等离子气相辅助化学沉积法沉积而成。
优选地，其中等离子气相辅助化学沉积法沉积掺磷(硼)氧化硅层使用管式或平板式等离子气相辅助化学沉积法的方式进行。
优选地，使用等离子气相辅助化学沉积法沉积时，加热温度为200-400℃；反应气体硅烷使用氮气稀释，硅烷的浓度＜10％；氧化性气体笑气的流量为0.5-1L/min；反应气体磷烷浓度为0.02-0.2％，流量0.6-1L/min；反应室气体总压力为0.06-3托。
有益效果：
1、本发明通过在硅片表面沉积一层掺磷(硼)的氧化硅层，此过程中，形成的氧化硅层具有优异的均匀性，为后续步骤提供了更加均匀的前提。
2、本发明使用扩散炉进行高温扩散，不添加掺杂气源，利用均匀的掺磷氧化硅层，实现高均匀性方阻。
附图说明
图1是使用等离子气相辅助化学沉积法沉积掺杂氧化硅后再扩散的硅片进行方阻测试之后的对比图。
具体实施方式
为了加深对本发明的理解，下面将结合实施例和附图对本发明作进一步详述，该实施例仅用于解释本发明，并不构成对本发明保护范围的限定。
一种提高方阻均匀性的发射极制备方法，包括以下步骤：
(1)硅片预处理：对硅片进行清洗和减反射表面制备；
(2)磷(硼)硅玻璃层沉积；
(3)PN结制备：在P型硅正面进行扩散，形成N型发射极；在N型硅正面进行扩散，形成P型发射极；
(4)表面钝化：对硅片进行热退火，然后在硅片背面进行氧化铝和氮化硅的膜层制备，在硅片正面和背面进行氮化硅、氮氧化硅、二氧化硅、氧化铝、非晶硅、透明导电层等减反射膜的制备；
(5)金属化：在硅片表面进行背电极、背电场以及正面电极制备，并进行固化、烧结，完成电池制备。
步骤(2)中，掺磷(硼)氧化硅层使用等离子气相辅助化学沉积法沉积而成，其中等离子气相辅助化学沉积法沉积掺磷(硼)氧化硅层使用管式或平板式等离子气相辅助化学沉积法的方式进行。
使用等离子气相辅助化学沉积法沉积时，加热温度为200-400℃；反应气体硅烷使用氮气稀释，硅烷的浓度＜10％；氧化性气体笑气的流量为0.5-1L/min；反应气体磷烷浓度为0.02-0.2％，流量0.6-1L/min；反应室气体总压力为0.06-3托。
实施例中，通过使用等离子气相辅助化学沉积法在硅片表面沉积一层掺磷的氧化硅层，此过程中，使用到硅烷、笑气、磷烷(硼烷)作为等离子反应气体。由于等离子气相辅助化学沉积法工艺的特征，形成的氧化硅层具有优异的均匀性，为后续步骤提供了更加均匀的前提，使用扩散炉不添加掺杂气源进行高温扩散，利用均匀的掺磷(硼)氧化硅层，实现高均匀性方阻。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (4)
1.一种提高方阻均匀性的发射极制备方法，包括以下步骤，其特征在于；
(1)硅片预处理：对硅片进行清洗和减反射表面制备；
(2)磷(硼)硅玻璃层沉积；
(3)PN结制备：在P型硅正面进行扩散，形成N型发射极；在N型硅正面进行扩散，形成P型发射极；
(4)表面钝化：对硅片进行热退火，然后在硅片背面进行氧化铝和氮化硅的膜层制备，在硅片正面和背面进行氮化硅、氮氧化硅、二氧化硅、氧化铝、非晶硅、透明导电层等减反射膜的制备；
(5)金属化：在硅片表面进行背电极、背电场以及正面电极制备，并进行固化、烧结，完成电池制备。
2.根据权利要求1所述的一种提高方阻均匀性的发射极制备方法，其特征在于，步骤(2)中，掺磷(硼)氧化硅层使用等离子气相辅助化学沉积法沉积而成。
3.根据权利要求2所述的一种提高方阻均匀性的发射极制备方法，其特征在于，其中等离子气相辅助化学沉积法沉积掺磷(硼)氧化硅层使用管式或平板式等离子气相辅助化学沉积法的方式进行。
4.根据权利要求2所述的一种提高方阻均匀性的发射极制备方法，其特征在于，使用等离子气相辅助化学沉积法沉积时，加热温度为200-400℃；反应气体硅烷使用氮气稀释，硅烷的浓度＜10％；氧化性气体笑气的流量为0.5-1L/min；反应气体磷烷浓度为0.02-0.2％，流量0.6-1L/min；反应室气体总压力为0.06-3托。
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| JP2015109361A (ja) * | 2013-12-05 | 2015-06-11 | 信越化学工業株式会社 | 太陽電池の製造方法 |
| US20150337145A1 (en) * | 2012-10-22 | 2015-11-26 | Cambridge Enterprise Limited | Functional Inks Based on Layered Materials and Printed Layered Materials |
| CN105576083A (zh) * | 2016-03-11 | 2016-05-11 | 泰州中来光电科技有限公司 | 一种基于apcvd技术的n型双面太阳能电池及其制备方法 |
| CN105702809A (zh) * | 2016-04-07 | 2016-06-22 | 南昌大学 | 一种低温气相沉积固态扩散源制备用于太阳电池的掺杂硅的方法 |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150337145A1 (en) * | 2012-10-22 | 2015-11-26 | Cambridge Enterprise Limited | Functional Inks Based on Layered Materials and Printed Layered Materials |
| JP2015109361A (ja) * | 2013-12-05 | 2015-06-11 | 信越化学工業株式会社 | 太陽電池の製造方法 |
| CN104538485A (zh) * | 2014-11-06 | 2015-04-22 | 浙江正泰太阳能科技有限公司 | 一种双面电池的制备方法 |
| CN105576083A (zh) * | 2016-03-11 | 2016-05-11 | 泰州中来光电科技有限公司 | 一种基于apcvd技术的n型双面太阳能电池及其制备方法 |
| CN105702809A (zh) * | 2016-04-07 | 2016-06-22 | 南昌大学 | 一种低温气相沉积固态扩散源制备用于太阳电池的掺杂硅的方法 |
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Application publication date: 20200421 |