CN111048395A - Method for removing surface processing material on upper electrode of Unity-85 core component of 8-inch wafer manufacturing etcher - Google Patents
Method for removing surface processing material on upper electrode of Unity-85 core component of 8-inch wafer manufacturing etcher Download PDFInfo
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- CN111048395A CN111048395A CN201911359920.1A CN201911359920A CN111048395A CN 111048395 A CN111048395 A CN 111048395A CN 201911359920 A CN201911359920 A CN 201911359920A CN 111048395 A CN111048395 A CN 111048395A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to the technical field of photoelectricity, in particular to a method for removing a process object on the surface of an upper electrode of a Unity-85 core part of an 8-inch wafer manufacturing etching machine, which comprises the following steps: preparing materials: preparing dry ice particles and preparing a spraying device; spraying: pneumatically driving the dry ice particles to spray the upper electrode of the part at an oblique angle; cleaning: and cleaning residual impurities. The scheme of the invention prolongs the service life of the electrode material and greatly saves the cleaning cost. The scheme has high treatment efficiency, the speed is improved by multiple times, the core removing process of the electrode surface processing substances is optimized, and the progress of the industry is promoted.
Description
Technical Field
The invention relates to the field of photoelectric technology, in particular to a method for removing a process object on the surface of an upper electrode of a Unity-85 core part of an 8-inch wafer manufacturing etching machine.
Background
In the 8-inch wafer manufacturing process, a plurality of key parts are used by a cleaning and regenerating process, the semiconductor parts are regenerated by using a cleaning technology, and the regenerated parts can be repeatedly put into use. The cost of this part is very high due to the high requirement of process cleanliness when in use.
The traditional cleaning is to treat organic residues by organic chemical solvents or reagents, such as acetone, butanone and the like; or auxiliary high pressure water sand blasting cleaning and the like. But the former causes environmental pollution and the latter damages the surface coating of the component itself.
The surface of the upper electrode of the Unity-85 component has a hard oxide layer (usually alumina), and the sealing portion of the electrode has a resin material. In the cleaning process of the upper electrode of the Unity-85 part, the following problems exist: as the ketone solvent can dissolve the fluorine-containing material, the material is carried in the production or cleaning process, on one hand, acetone dissolved with fluorine can convert covalent fluorine into fluorine ions once contacting water to erode the hard alumina layer, and on the other hand, the ketone solvent can dissolve the sealing material resin. By adopting the method, the upper electrode of the part is cleaned and regenerated, and the part is scrapped without 10 times.
Therefore, the above method is not suitable for the requirement of the cleaning regeneration process of the specific situation, and a brand-new, environment-friendly, efficient and reliable mode needs to be developed to seek breakthrough of the cleaning technology.
Disclosure of Invention
The purpose of the invention is as follows: in order to overcome the defects of the background art, the invention discloses a method for removing a processing object on the surface of an upper electrode of a Unity-85 core component of an 8-inch wafer manufacturing etching machine, which is used for at least solving one of the problems in the prior art.
The technical scheme is as follows: in order to achieve the above object, the present invention discloses a method for removing surface processed material on the upper electrode of the core component of the 8-inch wafer-manufacturing etcher Unity-85, which is used to physically regenerate the upper electrode of the component, wherein at least part of the upper electrode of the component is surface Al2O3The protective layer region of material comprises the following steps:
s10, preparing materials: preparing a dry ice granulator, and preparing normal pressure dry ice particles with the particle size of less than 3mm and the temperature of below-78 ℃; preparing a spraying device, wherein the spraying device is provided with at least two feeding holes and at least one discharging hole, one feeding hole of the spraying device is connected with the discharging end of the dry ice granulator, and the other feeding hole of the spraying device is connected with a gas tank filled with protective gas; preparing a six-axis manipulator, wherein the tail end of the six-axis manipulator is connected with a spraying device;
s20, spraying, namely, placing the upper electrode of the part on a tool, operating the spraying device by using a six-axis manipulator to enable the spraying direction of the discharge port to form an oblique angle α with the section of the upper electrode of the part, wherein the total pressure of the discharge port is not less than 6.5bar, controlling the six-axis manipulator to keep spraying the surface of any part of the upper electrode of the part at an angle of α, and the protective layer area is every cm2The spraying time is not less than 5 s;
s30, washing: and after the upper electrode of the part is slowly warmed to room temperature, the upper electrode of the part is flushed by ultrapure water or protective gas to take away residual impurities.
Preferably, the protective gas is nitrogen or argon. The nitrogen or argon is inert gas, and plays an atmosphere protection role on the dry ice to prevent the cold parts from condensing water vapor in the air to become damp, so that impurities are efficiently removed by freezing and impacting the surface of the electrode.
Further, the pressure of the shielding gas at the feed port is not less than 5 bar. The pressure at the feed inlet should not be too low, nor too high, too low the peeling force is not sufficient, and the desired removal effect cannot be achieved, with 5bar as the minimum value.
Preferably, the total pressure of the discharge port is 6.5-8 bar. The pressure of 6.5-8 bar can reach the limit of ideal stripping and removing effects under the condition of the dry ice granularity.
Preferably, the particle size of the dry ice particles is 0.25-0.5 mm. The dry ice has fine particle size which is close to the minimum size limit value in the prior art, so that the cleaning effect is better than that of large particles under the same pressure, and the impact is more delicate.
Preferably, the cross section of the discharge port is in a long and narrow shape like a Chinese character 'yi', the length of the long and narrow side of the cross section is 0.25-3 mm, and the width of the long and narrow side of the cross section is not more than 0.5 mm. The cross section of the straight shape and the length and width values thereof ensure that the obtained dry ice has a specific shape, so that the surface of the cutting part can achieve reasonable cutting and impacting states, and impurities can be efficiently removed.
Furthermore, the long and narrow edge of the cross section of the discharge port is provided with wavy grains. The raised grains improve the fineness of the shearing and impacting of the dry ice on the surface of the component.
In one embodiment, the bevel angle α is in the range of 0.18 to 37 degrees arctan angle α provides a desired ratio of impact shear to pressure.
Preferably, the six-axis manipulator is one of FANUC, KUKA, Kawasaki, ABB, Staobier, EPSON brands. The international first-line brand of the six-axis manipulator of the brand has the characteristics of durability in use and high precision, and the manipulator with non-high precision cannot be used in the invention.
Preferably, the parts are arranged on the surface of the protective layer after being placed in the tool. The vertical arrangement avoids overlarge impact force, and redundant dry ice particles can slide down along the same direction, so that the operation is convenient.
The technical scheme shows that the invention has the following beneficial effects: compared with the prior art, the method for removing the processing material on the surface of the upper electrode of the Unity-85 core part of the 8-inch wafer manufacturing etching machine has the following advantages: by applying the scheme of the invention, the thinning speed of the aluminum oxide layer is obviously slowed down, the falling probability of the sealing material is obviously reduced, the electrode material can still be used after 50 times of circular cleaning, the service life is prolonged, and the cleaning cost is greatly saved. The scheme of the invention has high treatment efficiency, improves the speed by several times, optimizes the core removing process of the electrode surface processing substances, promotes the progress of the industry and promotes the development of the cleaning technology of photoelectric parts.
Detailed Description
The method for removing the surface processing material on the upper electrode of the core component of the Unity-85 etching machine for 8 inches wafer manufacture is used for physically regenerating the upper electrode of the component, and at least part of the area of the upper electrode of the component is surface Al2O3The protective layer region of material comprises the following steps: s10, preparing materials: preparing a dry ice granulator, and preparing normal-pressure dry ice particles with the particle size of less than 3mm and the temperature of less than-78 ℃, preferably dry ice particles with the temperature of less than-100 ℃, wherein the particle size of the dry ice particles is preferably 0.25-0.5 mm; preparing a spraying device, wherein the spraying device is provided with at least two feeding holes and at least one discharging hole, one feeding hole of the spraying device is connected with the discharging end of the dry ice granulator, and the other feeding hole of the spraying device is connected with a gas tank filled with protective gas; preparing a six-axis manipulator, wherein the tail end of the six-axis manipulator is connected with a spraying device;
s20, spraying, namely, placing the upper electrode of the part on a tool, operating a spraying device by using a six-axis manipulator to enable the spraying direction of the discharge port to form an oblique angle α with the tangent plane of the upper electrode of the part, wherein the oblique angle α ranges from 0.18 to 37 degrees, the total pressure of the discharge port ranges from 6.5 to 8bar, the pressure of the protective gas at the feed port is not less than 5bar, controlling the six-axis manipulator to keep spraying the surface of any position of the upper electrode of the part at an angle α, and the protective layer area is per cm2The spraying time is not less than 5 s;
s30, washing: and after the upper electrode of the part is slowly warmed to room temperature, the upper electrode of the part is flushed by ultrapure water or protective gas to take away residual impurities.
As a further embodiment, the cross section of the discharge hole is in a long and narrow shape like a Chinese character 'yi', the length of the long and narrow side of the cross section is 0.25-3 mm, and the width of the long and narrow side of the cross section is not more than 0.5 mm; the long and narrow edge of the cross section of the discharge port is provided with wavy grains.
The cross section of the straight shape and the length and width values thereof ensure that the obtained dry ice has a specific shape, so that the surface of a cutting part can achieve reasonable cutting and impacting states, and impurities can be efficiently removed; the raised grains improve the fineness of shearing and impacting the surface of the part by the dry ice, when the dry ice is straight, the contact surface of the dry ice particle impacting part is easy to be small, effective impact cannot be fully exerted, the surface energy of the dry ice particles with the raised grains is larger, and the effective area and the frequency of impact with the surface of the part are larger, so that the refrigerating energy and the mechanical impact energy of the dry ice can be quickly and fully exerted.
Preferably, the six-axis manipulator is one of FANUC, KUKA, Kawasaki, ABB, Staobier, EPSON brands. The international first-line brand of the six-axis manipulator of the brand has the characteristics of durability in use and high precision, and the manipulator with non-high precision cannot be used in the invention.
In addition, the parts are placed on the surface of the protective layer and are vertically arranged after the tool. The vertical arrangement avoids overlarge impact force, and redundant dry ice particles can slide down along the same direction, so that the operation is convenient.
Table 1 shows the process parameters and the effects after removal for examples 1-5 and comparative example.
TABLE 1 description of the respective process conditions and effects of examples 1 to 5 and comparative example
Therefore, by applying the scheme of the invention, the thinning speed of the aluminum oxide layer is obviously slowed, the falling probability of the sealing material is obviously reduced, the electrode material can still be used after 50 times of circular cleaning, the service life is prolonged, and the cleaning cost is greatly saved. The scheme of the invention has high treatment efficiency, improves the speed by several times, optimizes the core removal process of the electrode surface processing substances and makes technical contribution to the industry.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that modifications can be made by those skilled in the art without departing from the principle of the present invention, and these modifications should also be construed as the protection scope of the present invention.
Claims (10)
- A method for removing surface processed material on upper electrode of Unity-85 core component of 1.8-inch wafer etching machine for physically regenerating the upper electrode of the component, wherein at least part of the upper electrode of the component is surface Al2O3The protective layer area of material, its characterized in that: the method comprises the following steps:s10, preparing materials: preparing a dry ice granulator, and preparing normal pressure dry ice particles with the particle size of less than 3mm and the temperature of below-78 ℃; preparing a spraying device, wherein the spraying device is provided with at least two feeding holes and at least one discharging hole, one feeding hole of the spraying device is connected with the discharging end of the dry ice granulator, and the other feeding hole of the spraying device is connected with a gas tank filled with protective gas; preparing a six-axis manipulator, wherein the tail end of the six-axis manipulator is connected with a spraying device;s20, spraying, namely, placing the upper electrode of the part on a tool, operating the spraying device by using a six-axis manipulator to enable the spraying direction of the discharge port to form an oblique angle α with the section of the upper electrode of the part, wherein the total pressure of the discharge port is not less than 6.5bar, controlling the six-axis manipulator to keep spraying the surface of any part of the upper electrode of the part at an angle of α, and the protective layer area is every cm2The spraying time is not less than 5 s;s30, washing: and after the upper electrode of the part is slowly warmed to room temperature, the upper electrode of the part is flushed by ultrapure water or protective gas to take away residual impurities.
- 2. The method as claimed in claim 1, wherein the protective gas is nitrogen or argon.
- 3. The method as claimed in claim 2, wherein the protective gas is supplied at a pressure of not less than 5bar at the inlet of the 8-inch wafer fabrication etcher Unity-85 core component top electrode surface processing article.
- 4. The method as claimed in claim 1, wherein the total pressure at the discharge port is 6.5-8 bar.
- 5. The method as claimed in claim 1, wherein the dry ice particles have a particle size of 0.25-0.5 mm.
- 6. The method as claimed in claim 1, wherein the discharge opening has a cross-section in the shape of a long and narrow "one", and the length of the long and narrow side of the cross-section is 0.25-3 mm and the width is not greater than 0.5 mm.
- 7. The method as claimed in claim 6, wherein the long and narrow sides of the cross section of the discharge opening are formed with raised patterns.
- 8. The method as claimed in claim 1, wherein the bevel α is in the range of 0.18-37 ° arctan.
- 9. The method of claim 1, wherein the six-axis robot is one of FANUC, KUKA, Kawasaki, ABB, Stainbel, EPSON.
- 10. The method as claimed in claim 1, wherein the surface of the passivation layer is vertically arranged after the component is mounted on the tool.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911359920.1A CN111048395A (en) | 2019-12-26 | 2019-12-26 | Method for removing surface processing material on upper electrode of Unity-85 core component of 8-inch wafer manufacturing etcher |
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| CN201911359920.1A CN111048395A (en) | 2019-12-26 | 2019-12-26 | Method for removing surface processing material on upper electrode of Unity-85 core component of 8-inch wafer manufacturing etcher |
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| CN111048395A true CN111048395A (en) | 2020-04-21 |
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Citations (6)
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|---|---|---|---|---|
| US4491496A (en) * | 1983-01-05 | 1985-01-01 | Commissariat A L'energie Atomique | Enclosure for the treatment, and particularly for the etching of substrates by the reactive plasma method |
| US20030196759A1 (en) * | 2002-04-22 | 2003-10-23 | Akira Yamaguchi | Highly heat-resistant plasma etching electrode and dry etching device including the same |
| CN101226873A (en) * | 2007-01-15 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning electrode surface in a polycrystal etching chamber |
| CN101801609A (en) * | 2008-07-23 | 2010-08-11 | 竹和工业株式会社 | The manufacture method of hydro-peening method, use therein solid carbon dioxide and manufacturing installation |
| WO2013191224A1 (en) * | 2012-06-20 | 2013-12-27 | 東京エレクトロン株式会社 | Seasoning method, plasma processing apparatus, and manufacturing method |
| CN108672352A (en) * | 2018-04-08 | 2018-10-19 | 苏州珮凯科技有限公司 | The Ti material parts regeneration methods of the TiN techniques of 8 cun of wafer manufacture thin film manufacture process of semiconductor |
-
2019
- 2019-12-26 CN CN201911359920.1A patent/CN111048395A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4491496A (en) * | 1983-01-05 | 1985-01-01 | Commissariat A L'energie Atomique | Enclosure for the treatment, and particularly for the etching of substrates by the reactive plasma method |
| US20030196759A1 (en) * | 2002-04-22 | 2003-10-23 | Akira Yamaguchi | Highly heat-resistant plasma etching electrode and dry etching device including the same |
| CN101226873A (en) * | 2007-01-15 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning electrode surface in a polycrystal etching chamber |
| CN101801609A (en) * | 2008-07-23 | 2010-08-11 | 竹和工业株式会社 | The manufacture method of hydro-peening method, use therein solid carbon dioxide and manufacturing installation |
| WO2013191224A1 (en) * | 2012-06-20 | 2013-12-27 | 東京エレクトロン株式会社 | Seasoning method, plasma processing apparatus, and manufacturing method |
| CN108672352A (en) * | 2018-04-08 | 2018-10-19 | 苏州珮凯科技有限公司 | The Ti material parts regeneration methods of the TiN techniques of 8 cun of wafer manufacture thin film manufacture process of semiconductor |
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Application publication date: 20200421 |