CN111045150A - Method for realizing continuous production of glass-based ion exchange surface optical waveguide chip - Google Patents
Method for realizing continuous production of glass-based ion exchange surface optical waveguide chip Download PDFInfo
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- CN111045150A CN111045150A CN201911405541.1A CN201911405541A CN111045150A CN 111045150 A CN111045150 A CN 111045150A CN 201911405541 A CN201911405541 A CN 201911405541A CN 111045150 A CN111045150 A CN 111045150A
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- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
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Abstract
The invention discloses a method for realizing continuous production of a glass-based ion exchange surface optical waveguide chip. Placing a tunnel type high-temperature furnace, wherein a conveyor belt and a crucible are arranged in the tunnel type high-temperature furnace, a quartz basket is suspended on the conveyor belt and is transported by the conveyor belt, the crucible is filled with fused salt containing doped ions, and the quartz basket is immersed in the fused salt; the glass substrate is placed in the quartz basket, the mask is processed on the surface of the glass substrate, the area where the optical waveguide pattern is planned to be formed is hollowed out, the support and the glass substrate are completely immersed in the fused salt containing the doped ions, the quartz basket is moved and transported through the conveyor belt, the glass substrate with the mask on the surface is immersed in the fused salt containing the doped ions in the crucible of the tunnel-type high-temperature furnace for ion exchange, and the core layer of the surface optical waveguide chip is manufactured. The invention improves the consistency of the optical waveguide chip, reduces the investment of fixed assets, improves the production efficiency of the optical waveguide chip and reduces the energy consumption.
Description
Technical Field
The invention relates to the field of optical devices and integrated optics, in particular to a method for realizing continuous production of a glass-based ion exchange surface optical waveguide chip.
Background
In 1969, s.e.miller proposed the concept of integrated optics, which was based on the idea of fabricating optical waveguides on the surface of the same substrate (or chip) and then implementing integrated fabrication of various devices such as light sources, couplers, filters, etc. By such integration, miniaturization, weight reduction, and stabilization of the optical system are achieved, and device performance is improved.
Integrated optical devices fabricated on glass substrates by ion exchange have received considerable attention from industry and researchers. Glass-based integrated optical waveguide devices based on ion exchange technology have several excellent properties, including: low transmission loss, easy doping of high-concentration rare earth ions, matching with the optical characteristics of the optical fiber, low coupling loss, good environmental stability, easy integration, low cost and the like. In 1972, the first article on ion exchange fabrication of optical waveguides was published, and the initiation of research on glass-based integrated optical devices was marked. Since then, research institutions in various countries have invested a great deal of manpower and financial resources in developing glass-based integrated optical devices. Up to now, integrated optical devices on several glass substrates have been mass-produced and serialized, successfully used for optical communication, optical interconnection and optical sensing networks, and have shown strong competitiveness.
The optical properties of ion-exchange optical waveguides fabricated by existing methods depend on the ion-exchange time and ion-exchange temperature. The existing ion exchange mode, namely, the ion exchange is carried out in a box-type high-temperature furnace, and the mass production of the optical waveguide chip has various problems.
First, the capacity of a general chamber type high temperature furnace is limited, and the number of glass substrates that can be accommodated in the high temperature furnace is affected in consideration of the non-uniformity of the temperature inside the chamber of the chamber type high temperature furnace, which limits the production efficiency and also increases the average energy consumption for chip production.
Secondly, the large-scale production needs a plurality of box-type high-temperature furnaces to work simultaneously, the temperature difference between the high-temperature furnaces, the operation speed of operators and the difference between operation habits increase the inconsistency of the optical properties of the ion exchange optical waveguide, and the improvement of the qualified rate is not facilitated.
Thirdly, a plurality of box-type high-temperature furnaces need more fixed asset investment and occupy more land resources.
Therefore, the existing ion exchange technology based on the box-type high-temperature furnace cannot be suitable for large-scale and mass production of the glass-based optical waveguide chip.
Disclosure of Invention
In order to solve the problems of the background art, the present invention is directed to a method for producing a glass-based optical waveguide by a continuous ion exchange method.
The technical scheme adopted by the invention for solving the technical problems is as follows:
in the scheme of the invention, a tunnel-type high-temperature furnace is arranged, furnace mouths are arranged at two ends of the tunnel-type high-temperature furnace and are respectively used as an inlet end and an outlet end, and a horizontal conveyor belt is arranged between the inlet end and the outlet end of the tunnel-type high-temperature furnace; the crucible is placed at the bottom between the inlet end and the outlet end of the tunnel-type high-temperature furnace, the quartz basket is suspended on the conveyor belt, the quartz basket is driven by the conveyor belt and is transported along the conveyor belt, the conveyor wheel of the conveyor belt is connected with the driving structure, and under the action of the driving structure of the conveyor belt, the conveyor belt conveys the quartz basket from the inlet end of the tunnel-type high-temperature furnace into the tunnel-type high-temperature furnace, and the quartz basket is conveyed to the outlet end of the tunnel-type high-temperature furnace after high-temperature ion; the crucible is filled with fused salt containing doped ions, and the quartz flower basket is immersed in the fused salt; the method is characterized in that a glass substrate is placed in the quartz flower basket, a mask with a hollow middle part is manufactured on the upper surface of the glass substrate through a micro-machining process, the support and the glass substrate are completely immersed in the fused salt containing the doped ions, the quartz flower basket is moved and transported through a conveyor belt, the glass substrate with the mask on the surface is immersed in the fused salt containing the doped ions in a crucible of a tunnel type high-temperature furnace for ion exchange, and the core layer of the surface optical waveguide chip is manufactured.
The glass substrate is made of silicate glass, borosilicate glass, phosphate glass or borate glass.
The doped ion-containing molten salt comprises the following doped ions: k+、Tl+、Ag+And Cs+。
Compared with the prior art for manufacturing the glass-based optical waveguide chip, the invention has the beneficial effects that:
the invention improves the consistency of the optical waveguide chip, and the qualification rate is easier to improve; the investment of fixed assets is reduced; the production efficiency of the optical waveguide chip is improved, and the energy consumption is reduced.
Drawings
FIG. 1 is a schematic diagram of a glass-based surface optical waveguide manufactured by the technical solution of the present invention.
In the figure: 2. a molten salt containing dopant ions; 3. a crucible; 4. a glass substrate; 5. masking; 6. a support; 7. an ion-doped region; 8. a tunnel type high temperature furnace; 9. a drive mechanism; 10. a conveyor belt; 11. a quartz flower basket.
Detailed Description
The invention is further illustrated by the following figures and examples.
As shown in fig. 1, a tunnel-type high-temperature furnace 8 is placed in a concrete implementation, a high-temperature heating device is arranged in the tunnel-type high-temperature furnace 8 to heat the interior of the furnace to reach an ion exchange temperature, furnace mouths are formed at two linear ends of the tunnel-type high-temperature furnace 8 and are respectively used as an inlet end and an outlet end, a horizontal conveyor belt 10 is arranged between the inlet end and the outlet end of the tunnel-type high-temperature furnace 8, in the concrete implementation, an upper belt of the conveyor belt 10 is positioned in the tunnel-type high-temperature furnace 8, a lower belt of the conveyor belt 10 is positioned outside the tunnel-type high-temperature furnace 8, and the conveyor belt 10 is wound.
The crucible 3 is placed at the bottom between the inlet end and the outlet end of the tunnel-type high-temperature furnace 8, the quartz flower basket 11 is suspended on the conveyor belt 10, the quartz flower basket 11 is driven by the conveyor belt 10 and is transported along the conveyor belt 10, the conveying wheel of the conveyor belt 10 is connected with the driving structure 9, the driving structure 9 can be a motor, and under the action of the driving structure 9 of the conveyor belt 10, the conveyor belt 10 conveys the quartz flower basket 11 into the tunnel-type high-temperature furnace 8 from the inlet end of the tunnel-type high-temperature furnace 8 and conveys the quartz flower basket to the outlet end of the tunnel-type high-temperature furnace 8 after high-; the crucible 3 is filled with a fused salt 2 containing doping ions, and the quartz basket 11 is immersed in the fused salt 2.
As shown in figure 1, a glass substrate 4 is placed in a quartz basket 11, a mask 5 with a hollow center for optical waveguide is manufactured on the upper surface of the glass substrate 4 by a micro-machining process, the hollow center is used as an ion exchange window, a bracket 6 and the glass substrate 4 are completely immersed in a fused salt 2 containing doped ions, the method is that the quartz basket 11 is moved and transported by a conveyor belt, and the glass substrate 4 with the mask 5 on the surface is immersed in the fused salt 2 containing the doped ions in a crucible 3 of a tunnel type high-temperature furnace 8 for ion exchange to manufacture a core layer of the surface optical waveguide chip.
Hollowing out the region of the mask 5 where the optical waveguide is planned to be formed as an ion exchange window, wherein the doped ions in the fused salt 2 containing the doped ions pass through the ion exchange window formed by the mask 5 and Na in the glass substrate 4 when the crucible 3 is conveyed by the conveyor belt 10+And exchanging, wherein the doped ions enter the surface layer of the glass substrate 4 and are diffused to form an ion doped region 7, so that the core layer of the surface optical waveguide chip is formed.
The invention relates to a method for continuously producing glass-based ion exchange surface optical waveguide chips, which respectively uses K+/Na+Ion exchange and Ag+/Na+The continuous production of glass-based ion exchange surface optical waveguide chips is described by taking surface single-mode and multi-mode optical waveguides manufactured by ion exchange as examples.
Example 1: by K+/Na+Ion exchange fabrication of single mode optical waveguides
The required preparation work is as follows:
a tunnel type high temperature furnace (8) with the length of 6 meters, a conveyor belt (10) and a driving mechanism (9). Wherein the drive mechanism (9) can be infinitely variable.
Molten salt (2) containing doping ions, here KNO3And (3) melting salt.
A silicate glass substrate (4) with a mask (5) with a hollow structure on the surface.
70 quartz baskets (11) were prepared.
The method mainly comprises the following steps:
(A) the temperature of the tunnel type high temperature furnace (8) is raised to 350 ℃ and kept. The rotating speed of the driving mechanism (9) is adjusted to ensure that the transmission speed of the conveyor belt (10) is 0.25 mm/s.
(B) Putting a silicate glass substrate (4) into a quartz basket (11), and fixing the quartz basket (11) on a conveyor belt (10) at the inlet end of a tunnel type high-temperature furnace (8);
(C) injecting a fused salt (2) containing doping ions into the crucible (3) to submerge the glass substrate (4);
(D) repeating the operations (B) to (C) at the inlet end of the tunnel type high-temperature furnace (8) every 10 min;
(E) after the quartz flower basket (11) with the glass substrate (4) therein which is placed for the first time is conveyed to the outlet end of the tunnel type high temperature furnace (8), the glass substrate (4) is taken out from the quartz flower basket (11) at intervals of 10min for cleaning, and the fused salt (2) containing the doping ions in the crucible (3) is treated.
Example 2: by K+/Na+Ion exchange fabrication of multimode optical waveguides
The required preparation work is as follows:
a tunnel type high temperature furnace (8) with the length of 6 meters, a conveyor belt (10) and a driving mechanism (9). Wherein the drive mechanism (9) can be infinitely variable.
Molten salt (2) containing doping ions, here KNO3And (3) melting salt.
A silicate glass substrate (4) with a mask (5) with a hollow structure on the surface.
70 quartz baskets (11) were prepared.
The method mainly comprises the following steps:
(A) the temperature of the tunnel type high temperature furnace (8) is raised to 400 ℃ and kept. The rotating speed of the driving mechanism (9) is adjusted to ensure that the transmission speed of the conveyor belt (10) is 0.20 mm/s.
(B) Putting a silicate glass substrate (4) into a quartz basket (11), and fixing the quartz basket (11) on a conveyor belt (10) at the inlet end of a tunnel type high-temperature furnace (8);
(C) injecting a fused salt (2) containing doping ions into the crucible (3) to submerge the glass substrate (4);
(D) repeating the operations (B) to (C) at the inlet end of the tunnel type high-temperature furnace (8) every 12.5 min;
(E) after the quartz flower basket (11) with the glass substrate (4) therein which is placed for the first time is conveyed to the outlet end of the tunnel type high temperature furnace (8), the glass substrate (4) is taken out from the quartz flower basket (11) at intervals of 12.5min for cleaning, and the fused salt (2) containing the doping ions in the crucible (3) is treated.
Example 3: with Ag+/Na+Ion exchange fabrication of single mode optical waveguides
The required preparation work is as follows:
a tunnel type high temperature furnace (8) with the length of 6 meters, a conveyor belt (10) and a driving mechanism (9). Wherein the drive mechanism (9) can be infinitely variable.
Molten salt (2) containing doping ions, here AgNO3With NaNO3Mixed molten salt of (1), wherein AgNO3Content of (3) is 1 mol%.
A silicate glass substrate (4) with a mask (5) with a hollow structure on the surface.
50 quartz baskets (11) were prepared.
The method mainly comprises the following steps:
(A) the temperature of the tunnel type high temperature furnace (8) is raised to 330 ℃ and kept. The rotating speed of the driving mechanism (9) is adjusted to ensure that the transmission speed of the conveyor belt (10) is 0.50 mm/s.
(B) Putting a silicate glass substrate (4) into a quartz basket (11), and fixing the quartz basket (11) on a conveyor belt (10) at the inlet end of a tunnel type high-temperature furnace (8);
(C) injecting a fused salt (2) containing doping ions into the crucible (3) to submerge the glass substrate (4);
(D) repeating the operations (B) to (C) at the inlet end of the tunnel type high-temperature furnace (8) every 5 min;
(E) after the quartz flower basket (11) with the glass substrate (4) therein which is placed for the first time is conveyed to the outlet end of the tunnel type high temperature furnace (8), the glass substrate (4) is taken out from the quartz flower basket (11) at intervals of 5min for cleaning, and the fused salt (2) containing the doping ions in the crucible (3) is treated.
Example 4: with Ag+/Na+Ion exchange fabrication of multimode optical waveguides
The required preparation work is as follows:
a tunnel type high temperature furnace (8) with the length of 6 meters, a conveyor belt (10) and a driving mechanism (9). Wherein the drive mechanism (9) can be infinitely variable.
Molten salt (2) containing doping ions, here AgNO3With NaNO3Mixed molten salt of (1), wherein AgNO3Content of (3) is 1 mol%.
A silicate glass substrate (4) with a mask (5) with a hollow structure on the surface.
50 quartz baskets (11) were prepared.
The method mainly comprises the following steps:
(A) the temperature of the tunnel type high temperature furnace (8) is raised to 350 ℃ and kept. The rotating speed of the driving mechanism (9) is adjusted to ensure that the transmission speed of the conveyor belt (10) is 0.25 mm/s.
(B) Putting a silicate glass substrate (4) into a quartz basket (11), and fixing the quartz basket (11) on a conveyor belt (10) at the inlet end of a tunnel type high-temperature furnace (8);
(C) injecting a fused salt (2) containing doping ions into the crucible (3) to submerge the glass substrate (4);
(D) repeating the operations (B) to (C) at the inlet end of the tunnel type high-temperature furnace (8) every 10 min;
(E) after the quartz flower basket (11) with the glass substrate (4) therein which is placed for the first time is conveyed to the outlet end of the tunnel type high temperature furnace (8), the glass substrate (4) is taken out from the quartz flower basket (11) at intervals of 10min for cleaning, and the fused salt (2) containing the doping ions in the crucible (3) is treated.
The foregoing detailed description is intended to illustrate and not limit the invention, which is intended to be within the spirit and scope of the appended claims, and any changes and modifications that fall within the true spirit and scope of the invention are intended to be covered by the following claims.
Claims (3)
1. A method for realizing continuous production of a glass-based ion exchange surface optical waveguide chip is characterized by comprising the following steps: placing a tunnel type high temperature furnace (8), wherein furnace mouths are respectively used as an inlet end and an outlet end at two ends of the tunnel type high temperature furnace (8), and a horizontal conveyor belt (10) is arranged between the inlet end and the outlet end of the tunnel type high temperature furnace (8); the crucible (3) is placed at the bottom between the inlet end and the outlet end of the tunnel-type high-temperature furnace (8), a quartz basket (11) is suspended on the conveyor belt (10), the quartz basket (11) is driven by the conveyor belt (10) and is conveyed along the conveyor belt (10), a conveying wheel of the conveyor belt (10) is connected with the driving structure (9), and under the action of the driving structure (9) of the conveyor belt (10), the conveyor belt (10) conveys the quartz basket (11) into the tunnel-type high-temperature furnace (8) from the inlet end of the tunnel-type high-temperature furnace (8) and conveys the quartz basket to the outlet end of the tunnel-type high-temperature furnace (8) after high-temperature ion exchange reaction; the crucible (3) is filled with fused salt (2) containing doped ions, and the quartz flower basket (11) is immersed in the fused salt (2); the glass substrate (4) is placed in the quartz flower basket (11), the mask (5) with a hollow middle part is manufactured on the upper surface of the glass substrate (4) through a micro-machining process, the support (6) and the glass substrate (4) are completely immersed in the fused salt (2) containing the doped ions, the method is that the quartz flower basket (11) is moved through a conveyor belt to transport the glass substrate (4) with the mask (5) on the surface to be immersed in the fused salt (2) containing the doped ions in the crucible (3) of the tunnel-type high-temperature furnace (8) for ion exchange, and the core layer of the surface optical waveguide chip is manufactured.
2. The method for realizing the continuous production of the glass-based ion exchange surface optical waveguide chip according to claim 1, wherein the method comprises the following steps: the glass substrate (4) is made of silicate glass, borosilicate glass, phosphate glass or borate glass.
3. The method for realizing the continuous production of the glass-based ion exchange surface optical waveguide chip according to claim 1, wherein the method comprises the following steps: the doped ion-containing molten salt (2) contains the following doped ions: k+、Tl+、Ag+And Cs+。
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Citations (7)
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| EP0269996A1 (en) * | 1986-12-01 | 1988-06-08 | Siemens Aktiengesellschaft | Method of producing a buried region with a higher refractive index in a glass body by ion exchange |
| CN101561534A (en) * | 2009-05-26 | 2009-10-21 | 电子科技大学 | Theoretical basis for optical waveguide manufactured by ion exchange method |
| CN102645701A (en) * | 2012-05-04 | 2012-08-22 | 上海光芯集成光学股份有限公司 | Method for producing optical waveguide on surface of glass substrate by utilizing ion exchange method |
| CN103657154A (en) * | 2012-08-29 | 2014-03-26 | 中国石油化工股份有限公司 | Ion exchange method |
| CN104656188B (en) * | 2015-02-06 | 2018-02-16 | 浙江大学 | A kind of glass-based ion exchange optical waveguide containing feeromagnetic metal nano particle |
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| CN110286439A (en) * | 2019-07-02 | 2019-09-27 | 山东大学 | The method of optical waveguide quantum chip is formed on gradual period poled lithium tantalate using proton exchange method |
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2019
- 2019-12-30 CN CN201911405541.1A patent/CN111045150B/en not_active Expired - Fee Related
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| EP0269996A1 (en) * | 1986-12-01 | 1988-06-08 | Siemens Aktiengesellschaft | Method of producing a buried region with a higher refractive index in a glass body by ion exchange |
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| CN102645701A (en) * | 2012-05-04 | 2012-08-22 | 上海光芯集成光学股份有限公司 | Method for producing optical waveguide on surface of glass substrate by utilizing ion exchange method |
| CN103657154A (en) * | 2012-08-29 | 2014-03-26 | 中国石油化工股份有限公司 | Ion exchange method |
| CN104656188B (en) * | 2015-02-06 | 2018-02-16 | 浙江大学 | A kind of glass-based ion exchange optical waveguide containing feeromagnetic metal nano particle |
| CN108828718A (en) * | 2018-06-15 | 2018-11-16 | 深圳市慧康精密仪器有限公司 | A method of improving glass based optical waveguide chip uniformity |
| CN110286439A (en) * | 2019-07-02 | 2019-09-27 | 山东大学 | The method of optical waveguide quantum chip is formed on gradual period poled lithium tantalate using proton exchange method |
Non-Patent Citations (1)
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| 王明华 等: "离子交换玻璃光波导工艺与集成光学器件研究", 《红外与激光工程》 * |
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