CN1110441A - Integrated circuit with self-destruction function - Google Patents

Integrated circuit with self-destruction function Download PDF

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Publication number
CN1110441A
CN1110441A CN 94104490 CN94104490A CN1110441A CN 1110441 A CN1110441 A CN 1110441A CN 94104490 CN94104490 CN 94104490 CN 94104490 A CN94104490 A CN 94104490A CN 1110441 A CN1110441 A CN 1110441A
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CN
China
Prior art keywords
integrated circuit
self
fuse
switching device
destroying function
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Pending
Application number
CN 94104490
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Chinese (zh)
Inventor
叶垂奇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Winbond Electronics Corp
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Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Priority to CN 94104490 priority Critical patent/CN1110441A/en
Publication of CN1110441A publication Critical patent/CN1110441A/en
Pending legal-status Critical Current

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Abstract

The present invention provides an integrated circuit with self-destruction function. When some preset condition is produced, the interior of said integrated circuit can produce a voltage signal to destroy said integrated circuit. Said integrated circuit contains a transistor and a fuse type switching device. Said transistor has a control end which is connected with first reference voltage when it is in initial state, and said fuse type switching device can respond to the described voltage signal, and can connect the control end to second reference voltage so as to make the function of said integrated circuit permanently fail. When the preset condition is produced, said voltage signal can be instantly produced.

Description

Integrated circuit with self-destruction function
The invention relates to a kind of integrated circuit, particularly about a kind of when specified conditions take place, the integrated circuit that can the oneself destroys.
Generally speaking, the design of integrated circuit and manufacturing must be satisfied the specification of its setting.In most specification, the useful life of integrated circuit and the number of starts are to wish that it is longer and the more just better, that is to say that most specifications does not have the upper limit in the useful life and the number of starts.Traditional integrated circuit all has this type of specification.
But, in the special application field of minority, the manufacturer of integrated circuit or its follow-up system manufacturer, computer game card producer for example would rather be when certain specified conditions takes place, just in life-span of integrated circuit here.Perhaps, they wish that integrated circuit can only be activated certain predetermined times, and for example 10,000 is inferior.For example, in the field of computer game, wish that sometimes this computer game promptly can not be proceeded again when specified conditions take place.Predetermined condition comprises when integrated circuit is activated number of times and arrives the capping number of times, or the number of times that is performed of a certain specific address, or this computer game accumulative total is performed the time and arrives capping time or the like.An example in addition is electronic access control system.For example when the user of some electronic access cards inputed the password mistake and reaches set point number, the integrated circuit on this card oneself immediately destroyed, and makes the user can't exercise with this gate inhibition card again.
The purpose of this invention is to provide a kind of integrated circuit, can in certain impose a condition take place after, lose former design function and carry out the function of self-destruction voluntarily, to satisfy the needs of above-mentioned special applications.
Integrated circuit provided by the present invention comprises the switching device of a transistor and a fuse pattern.Transistor has a control end and is connected with first reference voltage when initial state, makes this integrated circuit energy operate as normal.The switching device of fuse pattern in response to a voltage signal, makes control end be connected with one second reference voltage, so that the function of integrated circuit was permanently lost efficacy.When predetermined condition took place, this voltage signal produced thereupon.
Detailed description and relevant indicators by following embodiment can be further understood spirit of the present invention.Wherein:
Fig. 1 is first preferred embodiment of the present invention.
Fig. 2 is second preferred embodiment of the present invention.
Fig. 3 confirms a preferred embodiment of circuit for a self-destruction among the present invention.
As shown in Figure 1, integrated circuit 1 of the present invention comprises the switching device 13 of a transistor 11 and a fuse pattern.Transistor 11 has a control end 110, is connected with one first reference voltage V1 when initial state, makes this integrated circuit 1 startup work.In other words, when control end 110 was connected with the first reference voltage V1, integrated circuit 1 was worked as the desirable mode of design specification.
Confirm circuit 15 when a self-destruction and send the switching device 13 of the voltage signal 151 of an action, can force control end 110 to be connected with one second reference voltage V2 to the fuse pattern.Thereby, integrated circuit 1 promptly by permanent inefficacy or produce can't operate as normal misoperation (malfunc-tion).
Can in integrated circuit 1, select any power switch (power switch) or any gate to replace transistor 11, as long as its inefficacy can force whole integrated circuit 1 to lose efficacy or misoperation.
According to the detailing in the integrated circuit 1, transistor 11 can be a metal-oxide semiconductor (MOS) (MOS) field-effect transistor, or bipolar (bipolar) transistor or a face junction type (Junction) field-effect transistor.
And according to selected kind as transistor 11 in the integrated circuit 1, control end 110 can be grid, drain electrode or the source terminal of face junction type or MOS field-effect transistor, also can be base stage, emitter or the collector terminal of bipolar transistor.
As shown in Figure 1, the switching device 13 of fuse pattern has one first end 131, one second end 133 and a signal input part 135.First end 131 is connected with control end 110, and second end 133 is connected with the second reference voltage V2. First end 131 and 133 at second end have first kind relation when initial state.Signal input part 135 is provided with input voltage signal 151, thereby when voltage signal 151 actions, first end 131 and 133 at second end have one second class relation.First kind relation is mutually opposite state with second class relation.Second class relation is disconnected (disconnect) relation when first kind pass is annexation.Second class relation is annexation when being disconnected the relation and the first kind is closed.According to the kenel of transistor 11, selected control end 110, and the type of first and second reference voltage V1, V2, can set first kind pass is connection or disconnected.
When the first reference voltage V1 was high potential, the second reference voltage V2 was electronegative potential.And when the first reference voltage V1 was electronegative potential, the second reference voltage V2 was high potential.
Fuse pattern switch 13 can be different pattern constitute, for example with silicon fuse (siliconfuse) pattern, or with non-volatile (non-Volatile) memory cell (memory cell) pattern, or with the anti-fuse of silicon (anti-fuse) pattern, or polysilicon (poly silicon) fuse pattern constitutes.Alleged fuse in this specification is meant that fuse can be fused and make two-end-point become open circuit (open) state when voltage signal 151 actions.On the contrary, alleged anti-fuse is meant that fuse can be fused and make two-end-point become closed (close) state when voltage signal 151 actions.In various Nonvolatile memory cell, preferable selection comprises the read-only storage of single programmable (OTPROM) unit, the read-only storage of electric erasable programmable (EEPROM) unit, or forceful electric power (Ferro-Electric) arbitrary access storage (RAM) unit.And in the read-only memory cell of various single programmable, preferable selection comprises the read-only storage of erasable programmable (EPROM) unit.
As shown in Figure 1, respond an event signal 150, self-destruction confirms that device 15 produces described voltage signal 151.Event signal 150 is that other circuit by system are produced, and this system comprises integrated circuit 1, device 15 and other circuit are confirmed in self-destruction.Self-destruction confirms that device 15 can be the part of integrated circuit 1, also can be to be the circuit beyond the integrated circuit 1.
Self-destruction confirms that a preferred embodiment of circuit 15 is a counting/timer (counter/timer) 3 as shown in Figure 3.Shown counting/timer 3 is the pattern of non-volatile predeterminable (presettable), it has a clock pulse (CLK) end incoming event signal 150, one default end (PRESET) input one preset signals, 152, one count values (countdata) end input, one counter value signal 153.Event signal 150 can be a starting up (Power-up) signal, and an address is (address comparison) signal relatively, or is any signal that can be used to count.Integrated circuit 1 is made the final step of finishing, and can simultaneously pre-set count values signal 153 be sent into counting end in the preset signals 152 of default end input action (active), so that the count value of default this counting/timer 3.
As previously mentioned, fuse-type switching device 13 includes multiple different pattern.But the fuse pattern switch 13 at these different types but has different minimum voltage values could change the state of its fusing or fusion.
Therefore, the invention provides one second embodiment, as shown in Figure 2, to be suitable for some fuse-type switching device 13, this class device 13 all has higher state transformation minimum voltage value.
All element among Fig. 2, except boost in voltage device 17, all with Fig. 1 disclosed identical, thereby its function with and working method can will no longer be repeated in this description in this with reference to the narration of aforementioned relevant Fig. 1.As shown in Figure 2, confirm that by self-destruction the confirmation signal 151 that circuit 15 produces starts a boost in voltage device 17, so this boost in voltage device 17 produces the voltage signal 171 of a high-voltage value.So this high voltage signal 171 is used for changing the state of fuse pattern switching device 13; That is to say by the fusion state to become blown state, or change over the fusion state by blown state.
Confirm circuit 15 as self-destruction, boost in voltage device 17 can be arranged within the integrated circuit 1, also can be arranged in outside the integrated circuit 1.

Claims (12)

1, a kind of integrated circuit with self-destroying function comprises:
One transistor has a control end and is connected with one first reference voltage when initial state, makes this integrated circuit startup work; And
One fuse-type switching device responds a voltage signal, described control end is connected with one second reference voltage, so that the function of described integrated circuit was permanently lost efficacy.
2, the integrated circuit with self-destroying function as claimed in claim 1, wherein said transistor is a mos field effect transistor.
3, the integrated circuit with self-destroying function as claimed in claim 2, wherein said control end are a gate terminal of mos field effect transistor.
4, the integrated circuit with self-destroying function as claimed in claim 1, the switching device of wherein said fuse-type has one first end, one second end and a signal input part, this first end is connected with described control end, this second end is connected with described second reference voltage, when initial state, has first kind relation between first end and second end, described signal input part is provided with importing described voltage signal, when described voltage signal moves, has one second class relation between described first end and second end.
5, the integrated circuit with self-destroying function as claimed in claim 1, wherein said first reference voltage is a high potential, and second reference voltage is an electronegative potential.
6, the integrated circuit with self-destroying function as claimed in claim 1, the switching device of wherein said fuse-type are a silicon fuse-type switching device.
7, the integrated circuit with self-destroying function as claimed in claim 1, the switching device of wherein said fuse-type are non-volatile (non-volatile) memory cell (memory cell) pattern.
8, the integrated circuit with self-destroying function as claimed in claim 1, the switching device of wherein said fuse-type are the anti-fuse of a silicon (anti-fuse) type switching device.
9, the integrated circuit with self-destroying function as claimed in claim 1 further comprises:
Circuit is confirmed in one self-destruction, and it responds an event signal, produces described voltage signal.
10, the integrated circuit with self-destroying function as claimed in claim 1 further comprises:
Circuit is confirmed in one self-destruction, and it responds an event signal, produces a confirmation signal; And
One boost in voltage device, it responds described confirmation signal, produces described voltage signal.
11, the integrated circuit with self-destroying function as claimed in claim 4, wherein first kind pass is that electric does not connect, and second class pass is the electric connection.
12, as claim 9 or 10 described integrated circuits with self-destroying function, wherein said self-destruction confirms that circuit is a counting/timer, and it has a clock pulse end and imports described event signal.
CN 94104490 1994-04-07 1994-04-07 Integrated circuit with self-destruction function Pending CN1110441A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 94104490 CN1110441A (en) 1994-04-07 1994-04-07 Integrated circuit with self-destruction function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 94104490 CN1110441A (en) 1994-04-07 1994-04-07 Integrated circuit with self-destruction function

Publications (1)

Publication Number Publication Date
CN1110441A true CN1110441A (en) 1995-10-18

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CN 94104490 Pending CN1110441A (en) 1994-04-07 1994-04-07 Integrated circuit with self-destruction function

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CN (1) CN1110441A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010133136A1 (en) * 2009-05-20 2010-11-25 炬力集成电路设计有限公司 Integrated circuit
CN103730161A (en) * 2013-12-23 2014-04-16 深圳国微技术有限公司 Attack-resistant safety circuit of safety chip and safety chip by adopting safety circuit
CN104331675A (en) * 2014-10-27 2015-02-04 北京同方时讯电子股份有限公司 Self-destruction device of electronic equipment
CN106960822A (en) * 2017-03-30 2017-07-18 中国电子科技集团公司第二十四研究所 A kind of integrated circuit self-destruction circuit and method that technology is trimmed based on fuse

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010133136A1 (en) * 2009-05-20 2010-11-25 炬力集成电路设计有限公司 Integrated circuit
US8471623B2 (en) 2009-05-20 2013-06-25 Actions Semiconductor Co., Ltd. Integrated circuit
CN103730161A (en) * 2013-12-23 2014-04-16 深圳国微技术有限公司 Attack-resistant safety circuit of safety chip and safety chip by adopting safety circuit
CN103730161B (en) * 2013-12-23 2017-06-06 深圳国微技术有限公司 A kind of safety circuit of safety chip attack resistance and the safety chip using the safety circuit
CN104331675A (en) * 2014-10-27 2015-02-04 北京同方时讯电子股份有限公司 Self-destruction device of electronic equipment
CN106960822A (en) * 2017-03-30 2017-07-18 中国电子科技集团公司第二十四研究所 A kind of integrated circuit self-destruction circuit and method that technology is trimmed based on fuse
CN106960822B (en) * 2017-03-30 2018-11-23 中国电子科技集团公司第二十四研究所 A kind of integrated circuit self-destruction circuit and method trimming technology based on fuse

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