CN111030052A - Back electromotive force protection circuit and motor - Google Patents
Back electromotive force protection circuit and motor Download PDFInfo
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- CN111030052A CN111030052A CN201911228484.4A CN201911228484A CN111030052A CN 111030052 A CN111030052 A CN 111030052A CN 201911228484 A CN201911228484 A CN 201911228484A CN 111030052 A CN111030052 A CN 111030052A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/08—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors
- H02H7/09—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors against over-voltage; against reduction of voltage; against phase interruption
Abstract
The embodiment of the disclosure discloses a back electromotive force protection circuit and a motor. Wherein, a back electromotive force protection circuit includes: a zener diode D24, a zener diode D25, a first switching type amplification circuit, a second switching type amplification circuit, and a third switching type amplification circuit; the zener diode D24 and the zener diode D25 are connected in series, the cathode of the zener diode D25 is connected to the anode of the zener diode D24, and the first, second and third switching amplifiers are respectively connected in parallel to the series circuit formed by the zener diode D24 and the zener diode D25. The circuit is protected by opening and closing the first switch type amplification circuit, the second switch type amplification circuit and the third switch type amplification circuit, so that the aim of preventing the generated back electromotive force from damaging the circuit is fulfilled.
Description
Technical Field
The disclosure belongs to the technical field of electronic circuits, and particularly relates to a back electromotive force protection circuit and a motor.
Background
With the wide application of motors, especially brushless dc motors, a large back electromotive force is generated to damage the circuit during the use of the motor.
Disclosure of Invention
In view of this, the embodiments of the present disclosure provide a back electromotive force protection circuit and a motor, which at least solve the problem of circuit damage caused by back electromotive force generated in the prior art.
In a first aspect, an embodiment of the present disclosure provides a back electromotive force protection circuit, including:
a zener diode D24, a zener diode D25, a first switching type amplification circuit, a second switching type amplification circuit, and a third switching type amplification circuit;
the zener diode D24 and the zener diode D25 are connected in series, the cathode of the zener diode D25 is connected to the anode of the zener diode D24, and the first, second and third switching amplifiers are respectively connected in parallel to the series circuit formed by the zener diode D24 and the zener diode D25.
Optionally, a series circuit of the zener diode D24 and the zener diode D25 provides forward overvoltage protection;
the first switch type amplifying circuit is conducted when the power supply voltage exceeds a set value and is used for stabilizing the power supply;
the second switch type amplifying circuit is conducted when the power supply voltage is positive;
the third switching type amplification circuit is turned on when the power supply voltage is negative, and is used for quickly depleting electric energy.
Optionally, the first switch-type amplifying circuit includes a triode Q22, a resistor R129, a resistor R30, a resistor R130, and a resistor R142;
the resistor R129 and the resistor R30 are connected in series between the base and the emitter of the transistor Q22, the resistor R130 and the resistor R142 are connected in series between the power supply and the collector of the transistor Q22, and the emitter of the transistor Q22 is connected in series with the ground.
Optionally, the triode Q22 is an NPN type triode, the resistance value of the resistor R129 is 1KF, the resistance value of the resistor R30 is 10KF, the resistance value of the resistor R130 is 5.1KF, and the resistance value of the resistor R142 is 5.1 KF.
Optionally, the second switch-type amplifying circuit includes a triode Q23, a resistor R143, a resistor R144, a resistor R146, and a resistor R147;
the resistor R143 is connected in series between the collector of the transistor Q22 and the base of the transistor Q23, the resistor R144 is connected in series between the base and the emitter of the transistor Q23, the resistor R146 and the resistor R147 are connected in series between the power supply and the collector of the transistor Q23, and the emitter of the transistor Q23 is connected in series with the ground.
Optionally, the triode Q23 is an NPN type triode, the resistance value of the resistor R143 is 1KF, the resistance value of the resistor R144 is 5.1KF, the resistance value of the resistor R146 is 5.1KF, and the resistance value of the resistor R147 is 5.1 KF.
Optionally, the third switching type amplifying circuit includes a field effect transistor Q24, a resistor R145, a resistor R148, a resistor R149, and a diode D26;
the resistor R145 is connected in series between the collector of the triode Q23 and the gate of the field effect transistor Q24, the resistor R148 is connected in series between the gate and the source of the field effect transistor Q24, the resistor R149 is connected in series between the power supply and the drain of the field effect transistor Q24, the diode D26 is connected in parallel with the resistor R149, the anode of the diode D26 is connected with the drain of the field effect transistor Q24, the cathode of the diode D26 is connected with the power supply, and the source of the field effect transistor Q24 is connected in series with the ground.
Optionally, the field effect transistor Q24 is a medium voltage MOS, the resistance value of the resistor R145 is 10RF, the resistance value of the resistor R148 is 5.1KF, the resistance value of the resistor R149 is 20RF/5W, and the diode D26 is a schottky diode.
Optionally, the resistor R149 is used to rapidly exhaust the electrical energy.
In a second aspect, embodiments of the present disclosure also provide an electric machine, including: the back electromotive force protection circuit according to any one of the first to third aspects.
As a specific implementation of the embodiments of the present disclosure,
according to the circuit protection device, the voltage stabilizing diode D24, the voltage stabilizing diode D25, the first switch type amplification circuit, the second switch type amplification circuit and the third switch type amplification circuit are arranged, and the circuit is protected by opening and closing of the first switch type amplification circuit, the second switch type amplification circuit and the third switch type amplification circuit, so that the purpose of preventing the generated counter electromotive force from damaging the circuit is achieved. In particular, damage to the circuit from back emf generated during motor movement is prevented.
Additional features and advantages of the disclosure will be set forth in the detailed description which follows.
Drawings
The above and other objects, features and advantages of the present disclosure will become more apparent by describing in greater detail exemplary embodiments thereof with reference to the attached drawings, in which like reference numerals generally represent like parts throughout.
Fig. 1 shows an electronic circuit diagram of a back emf protection circuit of one embodiment of the present disclosure.
Detailed Description
Preferred embodiments of the present disclosure will be described in more detail below. While the following describes preferred embodiments of the present disclosure, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein.
As shown in fig. 1, a back electromotive force protection circuit includes: a zener diode D24, a zener diode D25, a first switching type amplification circuit, a second switching type amplification circuit, and a third switching type amplification circuit;
the zener diode D24 and the zener diode D25 are connected in series, the cathode of the zener diode D25 is connected to the anode of the zener diode D24, and the first, second and third switching amplifiers are respectively connected in parallel to the series circuit formed by the zener diode D24 and the zener diode D25.
Optionally, a series circuit of the zener diode D24 and the zener diode D25 provides forward overvoltage protection;
the first switch type amplifying circuit is conducted when the power supply voltage exceeds a set value and is used for stabilizing the power supply;
the second switch type amplifying circuit is conducted when the power supply voltage is positive;
the third switching type amplification circuit is turned on when the power supply voltage is negative, and is used for quickly depleting electric energy.
Optionally, the first switch-type amplifying circuit includes a triode Q22, a resistor R129, a resistor R30, a resistor R130, and a resistor R142;
the resistor R129 and the resistor R30 are connected in series between the base and the emitter of the transistor Q22, the resistor R130 and the resistor R142 are connected in series between the power supply and the collector of the transistor Q22, and the emitter of the transistor Q22 is connected in series with the ground.
Optionally, the triode Q22 is an NPN type triode, the resistance value of the resistor R129 is 1KF, the resistance value of the resistor R30 is 10KF, the resistance value of the resistor R130 is 5.1KF, and the resistance value of the resistor R142 is 5.1 KF.
Optionally, the second switch-type amplifying circuit includes a triode Q23, a resistor R143, a resistor R144, a resistor R146, and a resistor R147;
the resistor R143 is connected in series between the collector of the transistor Q22 and the base of the transistor Q23, the resistor R144 is connected in series between the base and the emitter of the transistor Q23, the resistor R146 and the resistor R147 are connected in series between the power supply and the collector of the transistor Q23, and the emitter of the transistor Q23 is connected in series with the ground.
Optionally, the triode Q23 is an NPN type triode, the resistance value of the resistor R143 is 1KF, the resistance value of the resistor R144 is 5.1KF, the resistance value of the resistor R146 is 5.1KF, and the resistance value of the resistor R147 is 5.1 KF.
Optionally, the third switching type amplifying circuit includes a field effect transistor Q24, a resistor R145, a resistor R148, a resistor R149, and a diode D26;
the resistor R145 is connected in series between the collector of the triode Q23 and the gate of the field effect transistor Q24, the resistor R148 is connected in series between the gate and the source of the field effect transistor Q24, the resistor R149 is connected in series between the power supply and the drain of the field effect transistor Q24, the diode D26 is connected in parallel with the resistor R149, the anode of the diode D26 is connected with the drain of the field effect transistor Q24, the cathode of the diode D26 is connected with the power supply, and the source of the field effect transistor Q24 is connected in series with the ground.
Optionally, the field effect transistor Q24 is a medium voltage MOS, the resistance value of the resistor R145 is 10RF, the resistance value of the resistor R148 is 5.1KF, the resistance value of the resistor R149 is 20RF/5W, and the diode D26 is a schottky diode.
Optionally, the resistor R149 is used to rapidly exhaust the electrical energy.
Wherein, K and R in the resistance values are resistance sizes, and F is the precision of the resistance, for example, 5.1KF is the resistance with the resistance size of 5.1K Ω and the precision of F, and F is ± 1%. 10RF, i.e. a resistor with a resistance size of 10 omega and a precision of F. The resistor R149 has a resistance of 5W, which is the rated power of the resistor.
In a specific application scenario, the back electromotive force protection circuit disclosed in this embodiment operates according to the following principle:
the reverse breakdown voltage of a series circuit formed by the voltage stabilizing diode D24 and the voltage stabilizing diode D25 is 39V, when the power supply VM exceeds 39V, the voltage stabilizing diode D24 and the voltage stabilizing diode D25 are conducted, the triode Q22 is conducted, the triode Q23 and the field effect transistor Q24 are cut off, and the power supply VM is stabilized at 39V.
When the power supply VM does not exceed 39V but is larger than 1V, the voltage stabilizing diode D24 and the voltage stabilizing diode D25 are not conducted, the triode Q23 is conducted, and the field effect transistor Q24 is cut off.
When the power supply VM is a negative voltage (i.e., generates a back electromotive force), the zener diode D24 and the zener diode D25 are not conducted, the transistor Q23 is not conducted, the fet Q24 is conducted, the voltage is depleted by the high-power resistor R149, and the back electromotive force is maintained within-60V due to the voltage stabilization effect of the diode D26. Thereby functioning to stabilize the power supply VM and quickly drain the current.
The counter electromotive force protection circuit is simple, reliable and high in sensitivity, and is very suitable for being applied to a direct current brushless motor circuit control board so as to prevent the counter electromotive force generated in the motor motion process from damaging the circuit.
In a second aspect, embodiments of the present disclosure also provide an electric machine, including: the back electromotive force protection circuit in all or some of the above embodiments.
Having described embodiments of the present disclosure, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the disclosed embodiments. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.
Claims (10)
1. A back-emf protection circuit, comprising:
a zener diode D24, a zener diode D25, a first switching type amplification circuit, a second switching type amplification circuit, and a third switching type amplification circuit;
the zener diode D24 and the zener diode D25 are connected in series, the cathode of the zener diode D25 is connected to the anode of the zener diode D24, and the first, second and third switching amplifiers are respectively connected in parallel to the series circuit formed by the zener diode D24 and the zener diode D25.
2. A back electromotive force protection circuit according to claim 1,
the series circuit formed by the voltage-stabilizing diode D24 and the voltage-stabilizing diode D25 provides forward overvoltage protection;
the first switch type amplifying circuit is conducted when the power supply voltage exceeds a set value and is used for stabilizing the power supply;
the second switch type amplifying circuit is conducted when the power supply voltage is positive;
the third switching type amplification circuit is turned on when the power supply voltage is negative, and is used for quickly depleting electric energy.
3. A back electromotive force protection circuit according to claim 1,
the first switch-type amplifying circuit comprises a triode Q22, a resistor R129, a resistor R30, a resistor R130 and a resistor R142;
the resistor R129 and the resistor R30 are connected in series between the base and the emitter of the transistor Q22, the resistor R130 and the resistor R142 are connected in series between the power supply and the collector of the transistor Q22, and the emitter of the transistor Q22 is connected in series with the ground.
4. A back electromotive force protection circuit according to claim 3,
the triode Q22 is an NPN type triode, the resistance value of the resistor R129 is 1KF, the resistance value of the resistor R30 is 10KF, the resistance value of the resistor R130 is 5.1KF, and the resistance value of the resistor R142 is 5.1 KF.
5. A back electromotive force protection circuit according to claim 3,
the second switch-type amplifying circuit comprises a triode Q23, a resistor R143, a resistor R144, a resistor R146 and a resistor R147;
the resistor R143 is connected in series between the collector of the transistor Q22 and the base of the transistor Q23, the resistor R144 is connected in series between the base and the emitter of the transistor Q23, the resistor R146 and the resistor R147 are connected in series between the power supply and the collector of the transistor Q23, and the emitter of the transistor Q23 is connected in series with the ground.
6. A back electromotive force protection circuit according to claim 5,
the triode Q23 is an NPN type triode, the resistance value of the resistor R143 is 1KF, the resistance value of the resistor R144 is 5.1KF, the resistance value of the resistor R146 is 5.1KF, and the resistance value of the resistor R147 is 5.1 KF.
7. A back electromotive force protection circuit according to claim 5,
the third switch type amplifying circuit comprises a field effect transistor Q24, a resistor R145, a resistor R148, a resistor R149 and a diode D26;
the resistor R145 is connected in series between the collector of the triode Q23 and the gate of the field effect transistor Q24, the resistor R148 is connected in series between the gate and the source of the field effect transistor Q24, the resistor R149 is connected in series between the power supply and the drain of the field effect transistor Q24, the diode D26 is connected in parallel with the resistor R149, the anode of the diode D26 is connected with the drain of the field effect transistor Q24, the cathode of the diode D26 is connected with the power supply, and the source of the field effect transistor Q24 is connected in series with the ground.
8. A back electromotive force protection circuit according to claim 7,
the field effect transistor Q24 is a medium voltage MOS transistor, the resistance value of the resistor R145 is 10RF, the resistance value of the resistor R148 is 5.1KF, the resistance value of the resistor R149 is 20RF/5W, and the diode D26 is a Schottky diode.
9. A back electromotive force protection circuit according to claim 8,
the resistor R149 is used to rapidly exhaust electric energy.
10. An electric machine, comprising: a back-emf protection circuit as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911228484.4A CN111030052B (en) | 2019-12-04 | 2019-12-04 | Back electromotive force protection circuit and motor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911228484.4A CN111030052B (en) | 2019-12-04 | 2019-12-04 | Back electromotive force protection circuit and motor |
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| CN111030052A true CN111030052A (en) | 2020-04-17 |
| CN111030052B CN111030052B (en) | 2022-06-17 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114597882A (en) * | 2022-03-18 | 2022-06-07 | 乐歌人体工学科技股份有限公司 | Motor drive circuit for preventing reverse electromotive force |
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| Publication number | Publication date |
|---|---|
| CN111030052B (en) | 2022-06-17 |
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