CN111029423A - Surface treatment device for absorption layer of copper indium gallium selenide thin-film solar cell - Google Patents
Surface treatment device for absorption layer of copper indium gallium selenide thin-film solar cell Download PDFInfo
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- CN111029423A CN111029423A CN201911289875.7A CN201911289875A CN111029423A CN 111029423 A CN111029423 A CN 111029423A CN 201911289875 A CN201911289875 A CN 201911289875A CN 111029423 A CN111029423 A CN 111029423A
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 238000004381 surface treatment Methods 0.000 title claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 41
- 238000004140 cleaning Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000005507 spraying Methods 0.000 claims abstract description 10
- 238000005096 rolling process Methods 0.000 claims abstract description 8
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims abstract description 7
- 150000003346 selenoethers Chemical class 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009776 industrial production Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- DHBXNPKRAUYBTH-UHFFFAOYSA-N 1,1-ethanedithiol Chemical compound CC(S)S DHBXNPKRAUYBTH-UHFFFAOYSA-N 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention discloses a surface treatment device for an absorption layer of a copper indium gallium selenide thin-film solar cell, which comprises a first cleaning chamber, a first air knife drying chamber, a chemical reaction chamber, a second air knife drying chamber, a second cleaning chamber and a heating and drying chamber which are sequentially communicated, wherein a conveying roller way for conveying a substrate is arranged in each chamber; plasma water spraying equipment is arranged above the conveying roller ways in the first cleaning cavity, and rolling brush cleaning equipment is arranged between the conveying roller ways at intervals; an air knife dryer is arranged at the upper part in the second air knife drying chamber; a chemical dissolving agent is stored in the chemical reaction chamber and is used for dissolving selenide and sulfide of the solar cell absorption layer; a drying fan is arranged in the heating and drying chamber; the processing device can simply and conveniently process the particles and burrs on the surface of the absorbing layer and optimize the surface appearance of the absorbing layer.
Description
Technical Field
The invention relates to the technical field of thin film solar, in particular to a surface treatment device for an absorption layer of a copper indium gallium selenide thin film solar cell.
Background
Photovoltaic power generation is an efficient and clean energy utilization method in the modern society. By the end of 2018, the global accumulated photovoltaic module power generation installation exceeds 510GW, wherein the copper indium gallium selenide thin-film solar cell accounts for 2.05GW, and the compound growth rate in the five years (2018-2022) in the future is about 16.53%. Among various commercialized solar cells, the copper indium gallium selenide thin-film solar cell gradually expands the application field due to the characteristics of high theoretical efficiency, low material consumption, low production energy consumption and the like, particularly, the thin-film cell prepared on float glass has the advantages of good shock resistance, high efficiency, good weak light property and the like, can perfectly accord with the requirements of fields such as BIPV, roof power generation, mobile energy and other special fields on the solar cell, and is certainly widely applied nowadays when the country increasingly attaches importance to the application of photovoltaic power generation.
At present, the industry mainly aims at industrial production methods of a copper indium gallium selenide thin-film solar absorption layer of a glass substrate, and the industrial production methods mainly comprise a three-step co-evaporation method, selenization after electroplating, a co-sputtering selenization method, a selenization after sputtering and the like. The surface of the absorption layer of the CIGS thin film solar cell grown by the method often generates more fine particles, more interfaces are introduced by the contact among the particles and become the recombination center of photon-generated carriers, the current density of the cell is reduced, and the conversion efficiency of the CIGS thin film solar cell is influenced.
At present, no effective method for completely removing fine particles on the surface of the CIGS absorbing layer without introducing other impurities or scratches has been found. In order to improve the surface effect of the copper indium gallium selenide absorption layer, the current industry mainly adopts the following process flows: firstly, low-pressure spraying is directly carried out on the film surface of the prepared copper indium gallium selenide thin film absorption layer substrate by using DI water, and then air drying treatment is carried out (a rolling brush cannot be carried, so that the film surface is prevented from being scratched); and then preparing a buffer layer by using a chemical water bath method or an evaporation method, and preparing a high-resistance layer i-ZnO by using a sputtering method to form the PN junction of the solar cell. The cleaning method directly spraying DI water can only remove small particles and partial large particles of the surface film layer of the copper indium gallium selenide, and the prepared buffer layer can completely cover all surface particles of the copper indium gallium selenide absorption layer only after reaching a certain thickness due to the existence of burrs formed by over-large or over-high partial particles, so that the aims of reducing the recombination probability of surface interface photon-generated carriers and stabilizing the efficiency of the battery can be achieved.
At present, most enterprises adopt CdS, ZnS and InxSyThe compounds are used as buffer layer materials, and the forbidden band widths of the materials are generally 2-2.7 eV, and the materials have strong absorption coefficients for blue light. If the prepared buffer layer is thick, the phenomenon that blue light enters the CIGS absorption layer to affect the quantity of photon-generated carriers, the current density of the cell is reduced, and the conversion efficiency of the CIGS thin-film solar cell is affected can be reduced.
In order to better improve the surface performance of the CIGS absorbing layer, potassium fluoride, sodium fluoride or cyanide is adopted in many laboratories to form a water solution to directly corrode the surface of the CIGS absorbing layer, and the method can passivate an interface and a grain boundary, promote the formation of a poor Cu layer, reduce the recombination and improve the open voltage of a battery. However, these substances have strong activity and strong toxicity, and are not suitable for large-scale industrial production.
Disclosure of Invention
The invention aims to provide a copper indium gallium selenide thin-film solar cell absorption layer surface treatment device which can simply and conveniently treat particles and burrs on the surface of an absorption layer, optimize the surface appearance of the absorption layer, avoid introducing new impurities and scratches, contribute to reducing the CdS thickness, have obvious effects on reducing the series resistance and reducing the parasitic absorption and contribute to improving the short-circuit current.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a surface treatment device for an absorption layer of a copper indium gallium selenide thin-film solar cell comprises a first cleaning chamber, a first air knife drying chamber, a chemical reaction chamber, a second air knife drying chamber, a second cleaning chamber and a heating and drying chamber which are sequentially communicated, wherein a conveying roller way for conveying a substrate is arranged in each chamber; plasma water spraying equipment is arranged above the conveying roller ways in the first cleaning cavity, and rolling brush cleaning equipment is arranged between the conveying roller ways at intervals; an air knife dryer is arranged at the upper part in the first air knife drying chamber; a chemical dissolving agent is stored in the chemical reaction chamber and used for dissolving selenide and sulfide of the solar cell absorption layer; the second air knife drying chamber has the same structure as the first air knife drying chamber; the second cleaning chamber has the same structure as the first cleaning chamber; a drying fan is arranged in the heating and drying chamber.
The method has the advantages that the prepared substrate of the CIGS absorbing layer is sequentially conveyed forwards from the first cleaning chamber, the plasma water spraying equipment directly sprays and cleans the absorbing layer in the first cleaning chamber, and the rolling brush cleaning equipment removes particles and stains which are not easy to remove from the bottom of the substrate; when the substrate passes through the first air knife drying chamber, the air knife air-dries the residual water traces on the surface of the absorption layer of the substrate, and simultaneously prevents water vapor from entering the chemical reaction chamber; after the substrate enters the chemical reaction chamber, the chemical dissolving agent dissolves selenide and sulfide on the surface of the absorption layer, so that large particles and burrs on the surface of the absorption layer can be effectively removed; the second air knife drying chamber can isolate the second cleaning chamber from the chemical reaction chamber, so that water vapor is prevented from entering the chemical reaction chamber; the second cleaning chamber also cleans the substrate and the absorption layer by using plasma water spraying and rolling brush cleaning, and partial residual chemical substances on the film surface, residual particles on the back surface of the substrate and the like are cleaned; finally, drying the substrate and the surface of the absorption layer in a heating and drying chamber by using a drying fan to finish the treatment of the surface of the absorption layer; the absorption layer processed by the device can reduce the number of surface particles, reduce the recombination center of current carriers, improve the current density of the battery and improve the conversion efficiency of the battery; meanwhile, the height of particles and burrs on the surface of the absorption layer is flattened, the surface performance of the absorption layer of the CIGS thin film solar cell is improved, the deposition thickness of a buffer layer is reduced, the spectral response of the absorption layer is increased, the number of photo-generated carriers is increased, and the conversion efficiency of the solar cell is improved; and the device has simple structure and convenient use, and is beneficial to industrial popularization and application.
Drawings
The invention is further illustrated with reference to the following figures and examples:
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic view of an absorber layer as a substrate enters a first cleaning chamber of the present invention;
figure 3 is a schematic view of the absorber layer after the substrate has been processed from the thermal drying chamber of the present invention.
Detailed Description
As shown in fig. 1, the invention provides a surface treatment device for an absorption layer of a copper indium gallium selenide thin-film solar cell, which comprises a first cleaning chamber 1, a first air knife drying chamber 2, a chemical reaction chamber 3, a second air knife drying chamber 4, a second cleaning chamber 5 and a heating and drying chamber 6 which are sequentially communicated, wherein a conveying roller bed 8 for conveying a substrate 7 is arranged in each chamber; a plasma water spraying device 9 is arranged above the conveying roller ways in the first cleaning chamber 1, and rolling brush cleaning devices 10 are arranged between the conveying roller ways at intervals; an air knife dryer 11 is arranged at the upper part in the first air knife drying chamber 2, preferably, the number of the air knife dryers is two, one of the two air knife dryers blows air vertically downwards, and the other air knife dryer blows air horizontally towards the first cleaning chamber 1; a chemical dissolving agent 12 is stored in the chemical reaction chamber 3, and the chemical dissolving agent 12 is used for dissolving selenide and sulfide of the solar cell absorption layer; preferably, the chemical dissolving agent of the embodiment can adopt a chemical solution of ethylenediamine and ethanedithiol with a molar ratio of 1: 3-1: 5, a KCl solution with a concentration of 10-60%, or KCH with a concentration of 20-80%3COO solution, can also adopt other dissolving agents, the invention does not make a restriction to dissolving agent, as long as can dissolve selenide and sulphide; the second air knife drying chamber 4 has the same structure as the first air knife drying chamber 2; the second cleaning chamber 5 has the same structure as the first cleaning chamber 1; a drying fan 13 is arranged in the heating and drying chamber 6.
When the device is used, the prepared substrate 7 of the CIGS absorbing layer 14 is sequentially conveyed forwards from the first cleaning chamber 1, the plasma water spraying device 9 in the first cleaning chamber 1 directly sprays and cleans the absorbing layer 14, and the roller brush cleaning device 10 removes particles and stains which are difficult to remove from the bottom of the substrate; when the substrate passes through the first air knife drying chamber 2, the air knife air-dries the residual water traces on the surface of the absorption layer of the substrate, and simultaneously prevents water vapor from entering the chemical reaction chamber; after the substrate enters the chemical reaction chamber 3, the chemical dissolving agent dissolves selenide and sulfide on the surface of the absorption layer, so that large particles and burrs on the surface of the absorption layer can be effectively removed; the second air knife drying chamber 4 can isolate the second cleaning chamber 5 from the chemical reaction chamber 3, and prevent water vapor from entering the chemical reaction chamber 3; the second cleaning chamber 5 also cleans the substrate and the absorption layer by using plasma water spraying and rolling brush cleaning, and cleans off partial residual chemical substances on the film surface and residual particles on the back surface of the substrate; and finally, drying the substrate and the surface of the absorption layer in the heating and drying chamber 6 by using a drying fan 13 to finish the treatment of the surface of the absorption layer. Comparing fig. 2 with fig. 3, the absorption layer processed by the device of the present invention can reduce the number of surface particles, reduce the recombination center of carriers, increase the current density of the battery, and increase the conversion efficiency of the battery; meanwhile, the height of particles and burrs on the surface of the absorption layer is flattened, the surface performance of the absorption layer of the CIGS thin film solar cell is improved, the deposition thickness of a buffer layer is reduced, the spectral response of the absorption layer is increased, the number of photo-generated carriers is increased, and the conversion efficiency of the solar cell is improved; and the device has simple structure and convenient use, and is beneficial to industrial popularization and application.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner; those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention.
Claims (1)
1. A surface treatment device for an absorption layer of a copper indium gallium selenide thin-film solar cell is characterized by comprising a first cleaning chamber, a first air knife drying chamber, a chemical reaction chamber, a second air knife drying chamber, a second cleaning chamber and a heating and drying chamber which are sequentially communicated, wherein a conveying roller way for conveying a substrate is arranged in each chamber; plasma water spraying equipment is arranged above the conveying roller ways in the first cleaning cavity, and rolling brush cleaning equipment is arranged between the conveying roller ways at intervals; an air knife dryer is arranged at the upper part in the second air knife drying chamber; a chemical dissolving agent is stored in the chemical reaction chamber and used for dissolving selenide and sulfide of the solar cell absorption layer; the second air knife drying chamber has the same structure as the first air knife drying chamber; the second cleaning chamber has the same structure as the first cleaning chamber; a drying fan is arranged in the heating and drying chamber.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911289875.7A CN111029423B (en) | 2019-12-16 | 2019-12-16 | Surface treatment device for absorption layer of copper indium gallium selenide thin-film solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911289875.7A CN111029423B (en) | 2019-12-16 | 2019-12-16 | Surface treatment device for absorption layer of copper indium gallium selenide thin-film solar cell |
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| CN111029423A true CN111029423A (en) | 2020-04-17 |
| CN111029423B CN111029423B (en) | 2021-04-06 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8197703B2 (en) * | 2007-04-25 | 2012-06-12 | Solopower, Inc. | Method and apparatus for affecting surface composition of CIGS absorbers formed by two-stage process |
| CN104148312A (en) * | 2013-08-09 | 2014-11-19 | 成都旭双太阳能科技有限公司 | Washing technology for TCO substrate glass with edges cut through laser etching |
| CN108212921A (en) * | 2018-01-29 | 2018-06-29 | 枣庄维信诺电子科技有限公司 | Cleaning device |
| CN108666392A (en) * | 2018-06-14 | 2018-10-16 | 浙江尚越新能源开发有限公司 | Copper indium gallium selenide chemical thought CSD integral devices |
| CN108723046A (en) * | 2018-07-18 | 2018-11-02 | 北京铂阳顶荣光伏科技有限公司 | Cleaning equipment |
| CN208489220U (en) * | 2018-07-19 | 2019-02-12 | 华东交通大学 | Copper indium gallium selenide (CIGS) thin-film solar cells electric deposition device |
-
2019
- 2019-12-16 CN CN201911289875.7A patent/CN111029423B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8197703B2 (en) * | 2007-04-25 | 2012-06-12 | Solopower, Inc. | Method and apparatus for affecting surface composition of CIGS absorbers formed by two-stage process |
| CN104148312A (en) * | 2013-08-09 | 2014-11-19 | 成都旭双太阳能科技有限公司 | Washing technology for TCO substrate glass with edges cut through laser etching |
| CN108212921A (en) * | 2018-01-29 | 2018-06-29 | 枣庄维信诺电子科技有限公司 | Cleaning device |
| CN108666392A (en) * | 2018-06-14 | 2018-10-16 | 浙江尚越新能源开发有限公司 | Copper indium gallium selenide chemical thought CSD integral devices |
| CN108723046A (en) * | 2018-07-18 | 2018-11-02 | 北京铂阳顶荣光伏科技有限公司 | Cleaning equipment |
| CN208489220U (en) * | 2018-07-19 | 2019-02-12 | 华东交通大学 | Copper indium gallium selenide (CIGS) thin-film solar cells electric deposition device |
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