CN111029371A - Organic light emitting diode display panel, display device and manufacturing method - Google Patents
Organic light emitting diode display panel, display device and manufacturing method Download PDFInfo
- Publication number
- CN111029371A CN111029371A CN201911061390.2A CN201911061390A CN111029371A CN 111029371 A CN111029371 A CN 111029371A CN 201911061390 A CN201911061390 A CN 201911061390A CN 111029371 A CN111029371 A CN 111029371A
- Authority
- CN
- China
- Prior art keywords
- layer
- light emitting
- organic light
- electrode
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The application provides an organic light-emitting diode display panel, which comprises a substrate, a thin film transistor layer arranged on the substrate, a planarization layer arranged on the thin film transistor layer, a pixel definition layer arranged on the planarization layer, and a light-emitting layer arranged on the pixel definition layer; the pixel defining layer is formed with a plurality of recesses, the light emitting layer includes a plurality of first electrodes, a plurality of organic light emitting portions, and a second electrode layer, each of the first electrodes and each of the organic light emitting portions are stacked in one of the recesses, and the second electrode layer is disposed on the organic light emitting portions and the pixel defining layer.
Description
Technical Field
The present disclosure relates to display technologies, and particularly to an organic light emitting diode display panel, a display device and a manufacturing method thereof.
Background
An organic light emitting diode device is known which includes an array structure composed of a planarization layer, an anode electrode, a pixel defining layer, and a support layer laminated. In such an array structure, the pixel defining layer has high light transmittance, and lateral light-out of the light-emitting layer can easily pass through the pixel defining layer. The side light penetrating through the pixel defining layer is reflected by the metal layers in the panel and is refracted by the nonmetal layers to become stray light. For organic light emitting diode products containing biological identification modules such as fingerprint identification and facial identification, the existence of stray light reduces the signal-to-noise ratio of the identification module, and further reduces the identification capability of the identification module. On the other hand, since the light emission of the light emitting layer proceeds along different directions without distinction, and is absorbed and refracted by the film layers such as PDL, etc., thereby causing light emission loss, the light emission Efficiency, that is, the External Quantum Efficiency (EQE), finally obtained is lower than 20%. In order to obtain high brightness at low light extraction efficiency, the power of the power supply has to be increased, which increases the power consumption of the organic light emitting diode device and greatly reduces the service life.
Disclosure of Invention
In view of the above, the present invention is directed to an organic light emitting diode device capable of effectively reducing stray light, improving external quantum efficiency, and prolonging service life.
An organic light-emitting diode display panel is characterized by comprising a substrate, a thin film transistor layer arranged on the substrate, a planarization layer arranged on the thin film transistor layer, a pixel definition layer arranged on the planarization layer, and a light-emitting layer arranged on the pixel definition layer;
the pixel defining layer is formed with a plurality of recesses therein, the light emitting layer includes a plurality of first electrodes, a plurality of organic light emitting portions, and a second electrode layer, each of the first electrodes and each of the organic light emitting portions are stacked in one of the recesses, and the second electrode layer is disposed on the organic light emitting portions and the pixel defining layer.
In the organic light emitting diode display panel according to an embodiment of the present application, the first electrode includes a bottom wall covering a bottom surface of the recess and a sidewall provided around the bottom wall, the sidewall covering a side surface of the recess.
In the organic light emitting diode display panel according to an embodiment of the present application, a first reflective microstructure is formed on a surface of the bottom wall away from the planarization layer.
In the organic light emitting diode display panel according to an embodiment of the present application, a second reflective microstructure is formed on the sidewall.
In the organic light emitting diode display panel according to an embodiment of the present application, a first concave-convex structure is formed on the planarization layer, a second concave-convex structure is formed on the surface of the bottom wall close to the planarization layer, the first concave-convex structure and the second concave-convex structure are matched, and the first reflective microstructure is formed at a position corresponding to the second concave-convex structure.
In the organic light emitting diode display panel according to an embodiment of the present application, a third concave-convex structure is formed on the pixel defining layer, a fourth concave-convex structure is formed on a surface of the sidewall adjacent to the pixel defining layer, the third concave-convex structure and the fourth concave-convex structure are matched, and the second reflective microstructure is formed at a position corresponding to the third concave-convex structure.
In the organic light emitting diode display panel according to an embodiment of the present invention, the length of the sidewall of the first electrode is smaller than the length of the side surface, and the organic light emitting portion covers the first electrode.
In the organic light emitting diode display panel according to an embodiment of the present application, a length of the sidewall of the first electrode is equal to a length of the side surface, and the organic light emitting part covers the first electrode.
An organic light emitting diode display device comprising the organic light emitting diode display panel as described in any one of the above.
A manufacturing method of an organic light emitting diode display panel comprises the following steps:
preparing a substrate, and forming a thin film transistor layer on the substrate;
forming a planarization layer on the thin-film transistor layer;
forming a pixel defining layer on the planarization layer, the pixel defining layer having a plurality of recesses formed therein;
forming a light emitting layer on the pixel defining layer;
wherein the step of forming a light emitting layer on the pixel defining layer includes: a first electrode is formed in the recess, an organic light emitting portion is formed on the first electrode, and a second electrode layer is formed on the organic light emitting portion and the pixel defining layer.
The organic light emitting diode display panel and the display device are provided with the light emitting layer arranged on the pixel definition layer, the first electrode covers the side wall of the pixel definition layer and reflects light incident to the side wall of the pixel definition layer, stray light can be effectively reduced, the light utilization rate is improved, and the service life of the display panel is prolonged. In addition, the organic light emitting diode display panel further provides light utilization rate by arranging the reflecting microstructures on the bottom wall and the side wall of the first electrode.
In the method for manufacturing the organic light emitting diode display device according to the embodiment of the application, the pixel defining layer is formed first, and then the light emitting layer is disposed in the concave portion of the pixel defining layer, and the first electrode covers the sidewall of the pixel defining layer and reflects light incident to the sidewall of the pixel defining layer, so that stray light can be effectively reduced, the light utilization rate is improved, and the service life of the display panel is prolonged. In addition, reflective microstructures are arranged on the bottom wall and the side wall of the first electrode, and light utilization rate is further improved.
Drawings
In order to more clearly illustrate the technical solutions in the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic cross-sectional view of an oled display panel according to an embodiment of the invention.
Fig. 2 is a schematic cross-sectional view of an oled display panel according to another embodiment of the present invention.
Fig. 3 is a schematic view of an organic light emitting diode display device according to an embodiment of the present invention.
Fig. 4(a) to 4(b) are schematic cross-sectional views illustrating a method of manufacturing an organic light emitting diode display panel according to an embodiment of the present invention.
Detailed Description
The technical solution in the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It should be apparent that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any inventive step based on the embodiments in the present application, are within the scope of protection of the present application.
Referring to fig. 1, the present invention provides an Organic Light-Emitting Diode (OLED) display panel 100, which is a top-emission OLED display panel. The organic light emitting diode display panel 100 includes a substrate 10, a thin-film transistor layer 20 disposed on the substrate 10, a planarization layer 30 disposed on the thin-film transistor layer 20, a pixel definition layer 40 disposed on the planarization layer 30, a light emitting layer 50 disposed on the pixel definition layer 40, and an encapsulation layer 60 disposed on the light emitting layer 50.
As the substrate 10, for example, a transparent glass substrate, a quartz substrate, or the like can be used. In addition, a transparent plastic substrate having flexibility such as polyethylene terephthalate or polyether sulfone may be used. In some embodiments of the present invention, opaque plastic substrates, metal substrates may also be used.
The thin-film transistor layer 20 is formed with a pixel driving circuit of the OLED display panel, and may include a driving TFT, a switching TFT, a storage capacitor, and the like. In some embodiments of the present invention, thin-film-transistor layer 20 specifically includes: a buffer layer 21 provided on the base substrate 10, a semiconductor layer 22 provided on the buffer layer 21, a gate insulating layer 23 provided on the buffer layer 21 and the semiconductor layer 22, a gate electrode 24 provided on the gate insulating layer 23, an interlayer insulating layer 25 provided on the gate electrode 24 and the gate insulating layer 23, and source/drain electrodes 26 provided on the interlayer insulating layer 25. In other embodiments of the present invention, the number of the gate 24 and the source/drain 26 is not limited.
A plurality of recesses 41 are opened in the pixel defining layer 40. The plurality of recesses 41 are arranged in a matrix for accommodating the light emitting layer 50. The recess 41 includes a bottom surface 41a and a side surface 41b surrounding the periphery of the bottom surface 41 a.
The light emitting layer 50 includes a plurality of first electrodes 51, a plurality of organic light emitting portions 52, and a second electrode layer 53. The organic light emitting section 52 is provided between the first electrode 51 and the second electrode layer 53, and insulates them. Each first electrode 51 and each organic light emitting portion 52 are stacked in one recess 41. The second electrode layer 53 is disposed on the organic light emitting portion 52 and the pixel defining layer 40, and covers the organic light emitting portion 52 and the pixel defining layer 40.
The first electrode 51 covers the bottom surface 41a and the side surface 41b of the recess 41. The first electrode 51 includes a bottom wall 51a and a side wall 51b disposed around the periphery of the bottom wall 51 a. The bottom wall 51a covers the bottom surface 41a of the recess 41, and the side wall 51b covers the side surface 41b of the recess 41. The bottom wall 51a has a first reflective microstructure 511 formed on a surface thereof away from the planarization layer 30. The first reflective microstructures 511 may be a plurality of protrusions, and the plurality of protrusions may be spaced apart or closely arranged. The cross-sectional shapes of the plurality of protrusions can be triangular or trapezoidal, and can also be arc-shaped or semicircular. The first reflective microstructures 511 are used to emit light toward the bottom surface 41a in a vertical direction, thereby reducing the loss of light to the side. The bottom wall 51a is further formed with a second concave-convex structure 513 on the surface close to the planarization layer 30, and the second concave-convex structure 513 is matched with the first concave-convex structure 31 of the planarization layer 30. The first reflective microstructures 511 may be formed at positions corresponding to the second concave-convex structure 513. The first reflective microstructures 511 may be naturally formed at positions corresponding to the first concave-convex structures 31 on the surface of the bottom wall 51a far from the planarization layer 30 due to the plurality of concave portions 41 formed on the planarization layer 30 when the first electrode 51 is deposited. The first reflective microstructure 511 may also be formed by a conventional method such as photolithography.
The first electrode 51 may be an anode, may be formed using a metal having conductivity and reflectivity, and may be formed using any metal of silver, aluminum, nickel, chromium, molybdenum, copper, iron, platinum, tungsten, lead, zinc, tin, antimony, strontium, titanium, manganese, indium, zinc, vanadium, tantalum, niobium, lanthanum, cerium, neodymium, samarium, europium, palladium, copper, nickel, cobalt, molybdenum, platinum, and silicon, an alloy thereof, and a laminate thereof. The reflective metal, for example, silver may be laminated with a transparent electrode, such as indium tin oxide or indium zinc oxide, to form a bottom electrode having a multilayer structure.
The organic light emitting part 52 includes at least an electron transport layer, a light emitting layer, and a hole transport layer, and may further include an electron injection layer disposed between the cathode and the electron transport layer and a hole injection layer disposed between the hole transport layer and the anode in order to improve electron and hole injection efficiency in other embodiments of the present application. The light emitting layer may include light emitting molecules that emit red, green, blue, or white light.
In the present embodiment, the length of the side wall 51b of the first electrode 51 is smaller than the length L2 of the side surface 40 b. The organic light emitting layer 52 covers the first electrode 51.
The second electrode layer 53 may be a cathode layer, which may be a transparent electrode or a semi-transparent electrode layer. When the second electrode layer 53 is a transparent electrode, the material thereof is a transparent oxide (TCO), which is preferably Indium Zinc Oxide (IZO), and when the second electrode layer 53 is a semitransparent electrode layer, the material thereof is a metal, which is preferably silver (Ag) or magnesium silver alloy (MgAg).
The encapsulation layer 60 is for preventing water and oxygen from entering, and may be, for example, a thin film encapsulation layer formed by alternately laminating an organic thin film and an inorganic thin film.
Referring to fig. 2, an organic light emitting diode display panel 200 according to another embodiment of the present invention has substantially the same structure as the organic light emitting diode display panel 100, except that: a second reflective microstructure 2512 is also formed on the surface of the sidewall 251b remote from the pixel defining layer 240. The second reflective microstructure 512 may be a plurality of protrusions, and the plurality of protrusions may be spaced apart or closely arranged. The second reflective micro-structure 512 is used to further emit the light emitted to the side surface 241b along the vertical direction, so as to reduce the loss of the light to the side. Also, a third concave-convex structure 242 is formed on the pixel defining layer 240, i.e., on the side 241b of the groove 241. A fourth concave-convex structure 2514 matched with the third concave-convex structure 242 is also formed on the surface of the sidewall 251b adjacent to the pixel defining layer 240.
Referring to fig. 3, fig. 3 is a schematic cross-sectional view of an oled display panel 300 according to another embodiment of the invention. The reflective microstructure and the relief structure are omitted from fig. 3 for simplicity of illustration. The organic light emitting diode display panel 300 has substantially the same structure as the organic light emitting diode display panel 100, except that: the length L1 'of the sidewall 351b of the first electrode 351 is equal to the length L2' of the side 340. The organic light emitting portion 352 covers the first electrode 351.
The organic light emitting diode display panel of the application can effectively reduce stray light, improve the light utilization rate and prolong the service life of the display panel by arranging the light emitting layer on the pixel definition layer to enable the first electrode to cover the side wall of the pixel definition layer and reflect light incident to the side wall of the pixel definition layer. In addition, the organic light emitting diode display panel further provides light utilization rate by arranging the reflecting microstructures on the bottom wall and the side wall of the first electrode.
Referring to fig. 3, another embodiment of the invention provides an organic light emitting diode display device 1 including the organic light emitting diode display panel (100, 200) of the present application.
Another embodiment of the present invention provides a method for manufacturing an organic light emitting diode display panel, including the steps of:
s10, a substrate 10 is prepared, and the thin-film transistor layer 20 is formed on the substrate 10.
And S20, forming planarization layer 30 on thin-film-transistor layer 20.
Referring to fig. 4(a), in step S20, a plurality of first concave-convex structures 31 are formed on the planarization layer 30.
S30, a pixel defining layer 40 is formed on the planarization layer 30, and a plurality of recesses 41 are opened in the pixel defining layer 40.
Referring to fig. 4(a), a plurality of concave portions 41 are arranged in a matrix for accommodating the light emitting layer 50. The recess 41 includes a bottom surface 41a and a side surface 41b surrounding the periphery of the bottom surface 41 a.
S40, the light emitting layer 50 is formed on the pixel defining layer 40.
Referring to fig. 4(b), in step S40, a first electrode 51 is formed in the recess 41, and the first electrode 51 covers the bottom surface 41a and the side surface 41b of the recess 41. The first electrode 51 includes a bottom wall 51a and a side wall 51b disposed around the periphery of the bottom wall 51 a. The bottom wall 51a covers the bottom surface 41a of the recess 41, and the side wall 51b covers the side wall 41b of the recess 41. The method of forming the first electrode 51 may be, for example, physical vapor deposition. Since the plurality of recesses 41 are formed on the planarization layer 30, the first reflective microstructures 511 are formed on the bottom wall 51a away from the surface of the planarization layer 30 at the time of depositing the first electrode 51, at positions corresponding to the first concave-convex structures 31. And, a second concave-convex structure 513 that matches the first concave-convex structure 31 of the planarization layer 30 is formed on the surface of the bottom wall 51a near the planarization layer 30. In other embodiments of the present application, the first reflective microstructure 511 may also be formed by depositing a metal film, exposing, developing, etching, and other conventional methods.
An organic light emitting section 53 is formed on the first electrode 51. The organic light emitting portion 52 may be formed by chemical deposition, inkjet printing, or the like. In the present embodiment, the length of the side wall 51b of the first electrode 51 is smaller than the length of the side surface 41 b. The organic light emitting layer 52 covers the first electrode 51.
In other embodiments of the present application, the length of the sidewall 251b of the first electrode 251 is equal to the length of the side surface 41 b. The organic light emitting portion 252 covers the first electrode 251. The second electrode layer 252 covers the organic light emitting portion 252.
A second electrode layer 53 is formed on the organic light emitting portion 52.
S50, an encapsulation layer 60 is formed on the light emitting layer 50.
In the method for manufacturing the organic light emitting diode display device according to the embodiment of the application, the pixel defining layer is formed first, and then the light emitting layer is disposed in the concave portion of the pixel defining layer, and the first electrode covers the sidewall of the pixel defining layer and reflects light incident to the sidewall of the pixel defining layer, so that stray light can be effectively reduced, the light utilization rate is improved, and the service life of the display panel is prolonged. In addition, reflective microstructures are arranged on the bottom wall and the side wall of the first electrode, and light utilization rate is further improved.
In other embodiments of the present application, referring to fig. 2, a third concave-convex structure 242 may be further formed on the pixel defining layer 240, i.e., the side 241b of the groove 241, and a second reflective microstructure 2512 is formed on the surface of the sidewall 251b far from the pixel defining layer 240 by a metal material deposition process, and a fourth concave-convex structure 2514 matched with the third concave-convex structure 242 is formed on the surface of the sidewall 251b close to the pixel defining layer 240.
The foregoing provides a detailed description of embodiments of the present application, and the principles and embodiments of the present application have been described herein using specific examples, which are presented solely to aid in the understanding of the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. An organic light-emitting diode display panel is characterized by comprising a substrate, a thin film transistor layer arranged on the substrate, a planarization layer arranged on the thin film transistor layer, a pixel definition layer arranged on the planarization layer, and a light-emitting layer arranged on the pixel definition layer;
the pixel defining layer is formed with a plurality of recesses therein, the light emitting layer includes a plurality of first electrodes, a plurality of organic light emitting portions, and a second electrode layer, each of the first electrodes and each of the organic light emitting portions are stacked in one of the recesses, and the second electrode layer is disposed on the organic light emitting portions and the pixel defining layer.
2. The organic light emitting diode display panel of claim 1, wherein the first electrode comprises a bottom wall covering a bottom surface of the recess and a side wall disposed around the bottom wall covering a side surface of the recess.
3. The oled display panel of claim 2 wherein a first reflective microstructure is formed on a surface of the bottom wall remote from the planarization layer.
4. The oled display panel of claim 2 or 3, wherein the sidewalls have second reflective microstructures formed thereon.
5. The oled display panel as claimed in claim 3, wherein a first concave-convex structure is formed on the planarization layer, a second concave-convex structure is formed on a surface of the bottom wall adjacent to the planarization layer, the first concave-convex structure and the second concave-convex structure are matched, and the first reflective micro-structure is formed at a position corresponding to the second concave-convex structure.
6. The organic light emitting diode display panel of claim 4, wherein the pixel defining layer is formed with a third concave-convex structure, the sidewall is formed with a fourth concave-convex structure on a surface adjacent to the pixel defining layer, the third concave-convex structure and the fourth concave-convex structure cooperate, and the second reflective microstructure is formed at a position corresponding to the third concave-convex structure.
7. The organic light emitting diode display panel according to claim 2, wherein a length of a sidewall of the first electrode is smaller than a length of the side surface, and the organic light emitting part covers the first electrode.
8. The organic light emitting diode display panel according to claim 2, wherein a length of a sidewall of the first electrode is equal to a length of the side surface, and the organic light emitting part covers the first electrode.
9. An organic light emitting diode display device comprising the organic light emitting diode display panel according to any one of claims 1 to 8.
10. A manufacturing method of an organic light emitting diode display panel comprises the following steps:
preparing a substrate, and forming a thin film transistor layer on the substrate;
forming a planarization layer on the thin-film transistor layer;
forming a pixel defining layer on the planarization layer, the pixel defining layer having a plurality of recesses formed therein;
forming a light emitting layer on the pixel defining layer;
wherein the step of forming a light emitting layer on the pixel defining layer includes: a first electrode is formed in the recess, an organic light emitting portion is formed on the first electrode, and a second electrode layer is formed on the organic light emitting portion and the pixel defining layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911061390.2A CN111029371A (en) | 2019-11-01 | 2019-11-01 | Organic light emitting diode display panel, display device and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911061390.2A CN111029371A (en) | 2019-11-01 | 2019-11-01 | Organic light emitting diode display panel, display device and manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111029371A true CN111029371A (en) | 2020-04-17 |
Family
ID=70204845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911061390.2A Pending CN111029371A (en) | 2019-11-01 | 2019-11-01 | Organic light emitting diode display panel, display device and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111029371A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584551A (en) * | 2020-05-06 | 2020-08-25 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN114122292A (en) * | 2021-11-15 | 2022-03-01 | 惠州华星光电显示有限公司 | OLED display panel and electronic equipment |
| WO2022236826A1 (en) * | 2021-05-14 | 2022-11-17 | 京东方科技集团股份有限公司 | Display substrate and display apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130001603A1 (en) * | 2011-06-29 | 2013-01-03 | Jae-Ik Lim | Methods of forming inclined structures on insulation layers, organic light emitting display devices and methods of manufacturing organic light emitting display devices |
| CN105810719A (en) * | 2016-05-27 | 2016-07-27 | 京东方科技集团股份有限公司 | Pixel unit, production method thereof, array substrate and display device |
| US20180006256A1 (en) * | 2016-06-29 | 2018-01-04 | Japan Display Inc. | Display device and method of manufacturing display device |
| CN108231841A (en) * | 2017-12-29 | 2018-06-29 | 深圳市华星光电技术有限公司 | OLED display device and preparation method |
-
2019
- 2019-11-01 CN CN201911061390.2A patent/CN111029371A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130001603A1 (en) * | 2011-06-29 | 2013-01-03 | Jae-Ik Lim | Methods of forming inclined structures on insulation layers, organic light emitting display devices and methods of manufacturing organic light emitting display devices |
| CN105810719A (en) * | 2016-05-27 | 2016-07-27 | 京东方科技集团股份有限公司 | Pixel unit, production method thereof, array substrate and display device |
| US20180006256A1 (en) * | 2016-06-29 | 2018-01-04 | Japan Display Inc. | Display device and method of manufacturing display device |
| CN108231841A (en) * | 2017-12-29 | 2018-06-29 | 深圳市华星光电技术有限公司 | OLED display device and preparation method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584551A (en) * | 2020-05-06 | 2020-08-25 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN111584551B (en) * | 2020-05-06 | 2023-12-01 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| WO2022236826A1 (en) * | 2021-05-14 | 2022-11-17 | 京东方科技集团股份有限公司 | Display substrate and display apparatus |
| CN114122292A (en) * | 2021-11-15 | 2022-03-01 | 惠州华星光电显示有限公司 | OLED display panel and electronic equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7224115B2 (en) | Display apparatus and method of manufacturing the same | |
| US8664677B2 (en) | Light-emitting element and organic electroluminescent display device | |
| US10693101B2 (en) | OLED panel having auxiliary cathode | |
| US10734608B2 (en) | Display panel and manufacturing method thereof and display device including display panel | |
| KR101189137B1 (en) | The organic electro-luminescence device and method for fabricating of the same | |
| US9231231B2 (en) | Organic light emitting diode display and manufacturing method thereof | |
| KR101972169B1 (en) | Organic light emitting display device and manufacturing method thereof | |
| CN111029371A (en) | Organic light emitting diode display panel, display device and manufacturing method | |
| US20140027735A1 (en) | Organic light emitting diode display and manufacturing method thereof | |
| JP2007317606A (en) | Organic el display device and its manufacturing method | |
| JP2006278128A (en) | Organic electroluminescence display | |
| US11974457B2 (en) | Light-emitting diode display devices with mirror | |
| JP2008041277A (en) | Display panel using light-emitting element, and its manufacturing method | |
| US10573205B2 (en) | Flexible display device and method for manufacturing flexible display device | |
| US8008851B2 (en) | Organic light emitting display | |
| CN113764489B (en) | Array substrate, manufacturing method of array substrate and display device | |
| CN212874544U (en) | Display panel | |
| CN111834434B (en) | OLED display device and preparation method thereof | |
| CN113078270A (en) | Organic electroluminescent structure, manufacturing method thereof and display device | |
| CN113948661B (en) | Display substrate and display device | |
| US11968853B2 (en) | Organic electroluminescent structure and display device | |
| US20220285647A1 (en) | Display apparatus | |
| JP2009064562A (en) | Manufacturing method of light emitting apparatus, and light emitting apparatus | |
| CN114695500A (en) | Display panel, manufacturing method thereof and display device | |
| WO2023206662A1 (en) | Display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200417 |