CN111024739B - Characterization method and characterization device for image distortion of transmission electron microscope - Google Patents
Characterization method and characterization device for image distortion of transmission electron microscope Download PDFInfo
- Publication number
- CN111024739B CN111024739B CN201911403921.1A CN201911403921A CN111024739B CN 111024739 B CN111024739 B CN 111024739B CN 201911403921 A CN201911403921 A CN 201911403921A CN 111024739 B CN111024739 B CN 111024739B
- Authority
- CN
- China
- Prior art keywords
- electron microscope
- transmission electron
- microscope image
- holes
- multiplying power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/2055—Analysing diffraction patterns
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The invention provides a characterization method of transmission electron microscope image distortion. The characterization method of the image distortion of the transmission electron microscope comprises the following steps: forming a plurality of first through hole groups; acquiring a first transmission electron microscope image of a sample at a first reference multiplying power and a second transmission electron microscope image at a first target multiplying power, wherein the first target multiplying power is lower than the first reference multiplying power; acquiring a first reference distance between two first through holes in each first through hole group in a first transmission electron microscope image and a first target distance between two first through holes in each first through hole group in a second transmission electron microscope image; distortion information of the transmission electron microscope image at the first target magnification with respect to the transmission electron microscope image at the first reference magnification is acquired. The method can obtain the distortion condition of the transmission electron microscope image under the target multiplying power lower than the reference multiplying power, and is simple and convenient to operate.
Description
Technical Field
The invention relates to the technical field of semiconductor analysis, in particular to a characterization method of transmission electron microscope image distortion.
Background
Transmission Electron Microscopy (TEM) projects an accelerated and focused beam of electrons onto a very thin sample, where the electrons collide with atoms in the sample and change direction, thereby producing solid angle scattering. The magnitude of the scattering angle is related to the density and thickness of the sample, and therefore, different bright and dark images can be formed, and the images can be displayed on an imaging device (such as a fluorescent screen, a film and a photosensitive coupling component) after being amplified and focused.
The critical dimensions of a large number of semiconductor structures inside an integrated circuit are on the nanometer scale, and therefore, the obtaining of the critical dimension information of the semiconductor structures depends on the tem image, and the quality of the tem image directly determines the accuracy and precision of the measurement results. Defects of hardware in the transmission electron microscope, such as aberration and astigmatism of each stage of magnetic lens, defects of a camera, and the like, cause distortion of the TEM image, and finally cause a large measurement error of the semiconductor structure. Therefore, representing the distortion degree of the transmission electron microscope image has important significance for improving the accuracy of semiconductor structure measurement. However, there is currently no effective way to characterize the degree of distortion of images of a transmission electron microscope at different magnifications.
Therefore, how to characterize the image distortion degree of the transmission electron microscope so as to improve the accuracy and precision of the semiconductor structure measurement is a technical problem to be solved at present.
Disclosure of Invention
The invention provides a characterization method and a characterization device for image distortion of a transmission electron microscope, which are used for solving the problem that the image distortion condition of the transmission electron microscope cannot be effectively characterized in the prior art so as to improve the accuracy and precision of semiconductor structure measurement.
In order to solve the above problems, the present invention provides a characterization method of image distortion of a transmission electron microscope, comprising the following steps:
providing a sample;
forming a plurality of first through hole groups, wherein each first through hole group comprises two first through holes penetrating through the sample, and the connecting directions of the two first through holes in any two first through hole groups are different from each other;
acquiring a first transmission electron microscope image of the sample at a first reference multiplying power and a second transmission electron microscope image at a first target multiplying power to be characterized, wherein the first target multiplying power is lower than the first reference multiplying power;
acquiring a first reference distance between two first through holes in each first through hole group in the first transmission electron microscope image and a first target distance between two first through holes in each first through hole group in the second transmission electron microscope image;
and acquiring distortion information of the transmission electron microscope image under the first target multiplying power relative to the transmission electron microscope image under the first reference multiplying power according to the plurality of first reference distances and the plurality of first target distances.
Optionally, the sample is a monocrystalline silicon sample; before forming a plurality of first through hole groups, the method further comprises the following steps:
acquiring a third transmission electron microscope image of the monocrystalline silicon sample under the first reference multiplying power;
and judging whether the distortion of the transmission electron microscope image under the first reference multiplying power is less than or equal to a first preset value or not according to the third transmission electron microscope image, and debugging the transmission electron microscope if the distortion of the transmission electron microscope image under the first reference multiplying power is not less than or equal to the first preset value.
Optionally, before determining whether the distortion of the transmission electron microscope image at the first reference magnification is less than or equal to a first preset value according to the third transmission electron microscope image, the method further includes the following steps:
the third transmission electron microscope image is an image of the monocrystalline silicon sample under a [110] tape axis;
obtaining the (1-11) interplanar spacing d in the third transmission electron microscope image 1 And (-111) interplanar spacing d 2 And calculating the distortion degree beta of the transmission electron microscope image under the first reference multiplying power by adopting the following formula 0 ：
β 0 ＝(d 1 /d 2 -1)×100％。
Optionally, the first preset value is 0.5%.
Optionally, the specific step of forming a plurality of first through hole groups includes:
and adjusting the distance between the two first through holes in the first through hole group according to the proportional relation between the first reference multiplying power and the first target multiplying power to be characterized.
Optionally, the specific step of forming a plurality of first through hole groups includes:
and irradiating the sample by using a focused electron beam to form a plurality of first through hole groups.
Optionally, the specific step of obtaining a first reference distance between two first through holes in each first through hole group in the first transmission electron microscope image includes:
and acquiring the distance between the centers of the two first through holes in each first through hole group in the first transmission electron microscope image as the first reference distance.
Optionally, the number of the first through hole groups is 2, four first through holes surround to form a quadrangle, and a connecting line between two first through holes in each first through hole group is a diagonal line of the quadrangle.
Optionally, the specific step of obtaining distortion information of the tem image at the first target magnification relative to the tem image at the first reference magnification according to the plurality of first reference distances and the plurality of first target distances includes:
calculating a distortion degree beta of the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification using the following formula 1 ：
β 1 ＝(A 0 B 1 /A 1 B 0 -1)×100％；
In the formula, A 0 Is the distance between two first through holes in one first through hole group in the first transmission electron microscope image, B 0 Is the distance, A, between two first through holes in another first through hole group in the first transmission electron microscope image 1 Is the distance between two first through holes in one first through hole group in the second transmission electron microscope image, B 1 Is the distance between two of the first through holes in the other of the first through hole groups in the second transmission electron microscope image.
Optionally, the method further comprises the following steps:
determining a distortion degree beta of the TEM image at the first target magnification relative to the TEM image at the first reference magnification 1 If the number of the second through holes is smaller than or equal to a second preset value, forming a plurality of second through hole groups in the sample, wherein each second through hole group comprises two second through holes penetrating through the sample, the connecting directions of the two second through holes in any two second through hole groups are different from each other, and any second through hole group is connected with a second through hole in the sampleThe distance between the two second through holes in the through hole group is larger than the distance between the two first through holes in any first through hole group;
acquiring a fourth transmission electron microscope image of the sample at the first target magnification;
acquiring a second reference distance between two second through holes in each second through hole group in the fourth transmission electron microscope image;
acquiring a fifth transmission electron microscope image of the sample under a second target magnification to be characterized, wherein the second target magnification is lower than the first target magnification;
acquiring a second target distance between two second through holes in each second through hole group in the fifth transmission electron microscope image;
and acquiring distortion information of the transmission electron microscope image under the second target multiplying power relative to the transmission electron microscope image under the first target multiplying power according to the plurality of second reference distances and the plurality of second target distances.
Optionally, the second preset value is 1%.
Optionally, the first reference magnification is a magnification greater than or equal to 190 Kx.
In order to solve the above problem, the present invention further provides a characterization apparatus for distortion of an image of a transmission electron microscope, comprising:
the device comprises an acquisition module, a comparison module and a display module, wherein the acquisition module is used for acquiring a first transmission electron microscope image of a sample under a first reference multiplying power and a second transmission electron microscope image of the sample under a first target multiplying power to be characterized, the first target multiplying power is lower than the first reference multiplying power, the sample is provided with a plurality of first through hole groups, each first through hole group comprises two first through holes penetrating through the sample, and the connecting directions of the two first through holes in any two first through hole groups are different from each other;
the measurement module is used for acquiring a first reference distance between two first through holes in each first through hole group in the first transmission electron microscope image and a first target distance between two first through holes in each first through hole group in the second transmission electron microscope image;
and the analysis module is used for acquiring distortion information of the transmission electron microscope image under the first target multiplying power relative to the transmission electron microscope image under the first reference multiplying power according to the plurality of first reference distances and the plurality of first target distances.
Optionally, the sample is a monocrystalline silicon sample; the acquisition module is further used for acquiring a third transmission electron microscope image of the monocrystalline silicon sample under the first reference multiplying power;
and the analysis module is also used for judging whether the distortion degree of the transmission electron microscope image under the first reference multiplying power is less than or equal to a first preset value or not according to the third transmission electron microscope image, and if not, debugging the transmission electron microscope.
Optionally, the third tem image is the single crystal silicon sample at [110]]Off-axis images; the measuring module is also used for acquiring the (1-11) interplanar spacing d in the third transmission electron microscope image 1 And (-111) interplanar spacing d 2 ；
The analysis module is also used for calculating the distortion degree beta of the transmission electron microscope image under the first reference multiplying power by adopting the following formula 0 ：
β 0 ＝(d 1 /d 2 -1)×100％。
Optionally, the first preset value is 0.5%.
Optionally, the number of the first through hole groups is 2, four first through holes surround to form a quadrangle, and a connecting line between two first through holes in each first through hole group is a diagonal line of the quadrangle.
Optionally, the measurement module is further configured to obtain a distance a between two first through holes in one first through hole group in the first transmission electron microscope image 0 Another one of the first transmission electron microscope imagesDistance B between two first through holes in a through hole group 0 A distance A between two first through holes in one first through hole group in the second transmission electron microscope image 1 A distance B between two first through holes in another first through hole group in the second transmission electron microscope image 1 ；
The analysis module is further configured to calculate a distortion degree β of the tem image at the first target magnification relative to the tem image at the first reference magnification using the following formula 1 ：
β 1 ＝(A 0 B 1 /A 1 B 0 -1)×100％。
According to the characterization method and the characterization device for the image distortion of the transmission electron microscope provided by the invention, a plurality of through hole groups are formed in a sample, each through hole group comprises two through holes penetrating through the sample, the distance between the two through holes in the through hole group at a reference multiplying power is used as a reference value, and the target distance between the two through holes in the through hole group at a target multiplying power is compared with the reference value, so that the image distortion condition of the transmission electron microscope at the target multiplying power lower than the reference multiplying power can be obtained, the operation is simple and convenient, a reference is provided for the measurement of a subsequent semiconductor structure at the target multiplying power, and the accuracy and precision of the measurement of the semiconductor structure are improved.
Drawings
FIG. 1 is a flow chart of a method for characterizing transmission electron microscope image distortion in an embodiment of the present invention;
FIG. 2 is a schematic representation of transmission electron microscope images of a sample at different magnifications in an embodiment of the invention;
FIG. 3 is a schematic diagram of a second set of through holes and a first set of through holes in accordance with an embodiment of the present invention;
FIG. 4 is a block diagram of a device for characterizing distortion of an image of a TEM according to an embodiment of the present invention.
Detailed Description
The following describes in detail embodiments of a method and an apparatus for characterizing distortion of a transmission electron microscope image according to the present invention with reference to the accompanying drawings.
The present characterization method for distortion of transmission electron microscope images can only be applied to high-resolution transmission electron microscope images obtained under high magnification, and in some low-magnification situations, the distortion of images under low magnification cannot be characterized because high-resolution transmission electron microscope images cannot be obtained. However, in the semiconductor industry, since the size range of a semiconductor structure is often in the field of view of medium and low magnifications, engineers are more concerned about whether there is a phenomenon that the transmission electron microscope image of the semiconductor structure is distorted too much at these medium and low magnifications.
In order to characterize distortion of a transmission electron microscope image at a medium-low magnification, the present embodiment provides a characterization method and a characterization apparatus for distortion of a transmission electron microscope image, and fig. 1 is a flowchart of a characterization method for distortion of a transmission electron microscope image according to the present embodiment. As shown in fig. 1, the method for characterizing distortion of an image of a transmission electron microscope according to the present embodiment includes the following steps:
step S11, a sample is provided.
In particular, the sample may be any sample capable of taking high resolution images in a transmission electron microscope at high magnification, such as, but not limited to, a monocrystalline silicon sample.
Step S12, forming a plurality of first through hole groups, wherein each first through hole group comprises two first through holes penetrating through the sample, and the connecting directions of any two first through holes in the first through hole groups are different from each other.
Optionally, the sample is a monocrystalline silicon sample; before forming a plurality of first through hole groups, the method further comprises the following steps:
acquiring a third transmission electron microscope image of the monocrystalline silicon sample under the first reference multiplying power;
and judging whether the distortion of the transmission electron microscope image under the first reference multiplying power is less than or equal to a first preset value or not according to the third transmission electron microscope image, and debugging the transmission electron microscope if the distortion of the transmission electron microscope image under the first reference multiplying power is not less than or equal to the first preset value.
Optionally, before determining whether the distortion of the transmission electron microscope image at the first reference magnification is less than or equal to a first preset value according to the third transmission electron microscope image, the method further includes the following steps:
the third transmission electron microscope image is an image of the monocrystalline silicon sample under a [110] tape axis;
obtaining the (1-11) interplanar spacing d in the third transmission electron microscope image 1 And (-111) interplanar spacing d 2 And calculating the distortion degree beta of the transmission electron microscope image under the first reference multiplying power by adopting the following formula 0 ：
β 0 ＝(d 1 /d 2 -1)×100％。
Optionally, the first preset value is 0.5%.
Optionally, the first reference magnification is a magnification greater than or equal to 190 Kx.
Specifically, prior to characterizing distortion of the tem image at the low magnification, the distortion of the tem image at the first reference magnification is calibrated to ensure accuracy of the relative distortion information subsequently obtained. If the distortion degree beta of the transmission electron microscope image under the first reference multiplying power is calculated by adopting the formula 0 And if the first preset value is less than or equal to the first preset value, determining whether the transmission electron microscope image under the multiplying power can be used as a reference standard for the distortion and the distortion degree of the transmission electron microscope image under the subsequent low multiplying power. If the distortion degree beta of the transmission electron microscope image under the first reference multiplying power is calculated by adopting the formula 0 If the distortion degree of the tem image at the first reference magnification is larger than the first preset value, it is indicated that the distortion degree of the tem image at the first reference magnification is too large, which may affect the determination of whether the distortion occurs and the distortion degree of the tem image at the subsequent low magnification, and at this time, the distortion degree of the tem image at the subsequent low magnification may be determinedAdjusting the transmission electron microscope until the distortion degree beta of the transmission electron microscope image under the first reference multiplying power 0 Less than or equal to the first preset value.
Optionally, the specific step of forming a plurality of first through hole groups includes:
and irradiating the sample by using a focused electron beam to form a plurality of first through hole groups.
Specifically, the sample is a monocrystalline silicon sample with a thickness of 60 nm. In forming the first via groups, the single crystal silicon sample may be irradiated with a high-energy focused electron beam (e.g., having an energy of 200 KeV), thereby forming a plurality of the first via groups in the single crystal silicon sample. Each through hole penetrates through the monocrystalline silicon sample so as to be convenient for identifying the through holes in a transmission electron microscope image subsequently. The cross section of the through hole can be circular, oval or any polygon, and the specific implementation is waterproof and is not limited to this. The term "plurality" as used in the present embodiment means two or more.
In order to simplify the characterization step, optionally, the number of the first through hole groups is 2, four first through holes surround to form a quadrilateral, and a connecting line between two first through holes in each first through hole group is a diagonal line of the quadrilateral.
In other specific embodiments, a person skilled in the art may set the specific number of the first through hole groups according to actual needs, for example, the number of the first through hole groups is 3, 4, 5, and the like.
And S13, acquiring a first transmission electron microscope image of the sample at a first reference multiplying power and a second transmission electron microscope image of the sample at a first target multiplying power to be characterized, wherein the first target multiplying power is lower than the first reference multiplying power.
Step S14 is to obtain a first reference distance between two first through holes in each first through hole group in the first transmission electron microscope image and a first target distance between two first through holes in each first through hole group in the second transmission electron microscope image.
Optionally, the specific step of obtaining a first reference distance between two first through holes in each first through hole group in the first transmission electron microscope image includes:
and acquiring the distance between the centers of the two first through holes in each first through hole group in the first transmission electron microscope image as the first reference distance.
FIG. 2 is a schematic representation of transmission electron microscope images of samples at different magnifications in an embodiment of the invention. Fig. 2 shows transmission electron microscope images of the single crystal silicon sample at 190Kx magnification, 150Kx magnification, 120Kx magnification, \8230;, nKx magnification, where n is a positive integer less than 120, in this order. Hereinafter, the first reference magnification is 190Kx magnification, the first target magnification is 150Kx magnification, the number of the first through hole groups is 2, and the cross section of the through hole is circular. As shown in FIG. 2, the distance A between the centers of the two through holes A and A' in a first through hole group in the first transmission electron microscope image was measured at 190Kx 0 And using the distance as a first reference distance; measuring the distance B between the centers of two through holes B and B' in another first through hole group in the first transmission electron microscope image at 190Kx multiplying power 0 And takes this distance as another first reference distance. Measuring the distance A between the centers of two through holes A and A' in a first through hole group in the second transmission electron microscope image at the magnification of 150Kx 1 And taking the distance as a first target distance; measuring the distance B between the centers of the two through holes B and B' in the other first through hole group in the second transmission electron microscope image at 150Kx multiplying power 1 And takes this distance as another first target distance.
And step S15, acquiring distortion information of the transmission electron microscope image under the first target multiplying power relative to the transmission electron microscope image under the first reference multiplying power according to the plurality of first reference distances and the plurality of first target distances.
Optionally, the specific step of obtaining distortion information of the tem image at the first target magnification relative to the tem image at the first reference magnification according to the plurality of first reference distances and the plurality of first target distances includes:
calculating a distortion degree beta of the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification using the following formula 1 ：
β 1 ＝(A 0 B 1 /A 1 B 0 -1)×100％；
In the formula, A 0 Is the distance between two first through holes in one first through hole group in the first transmission electron microscope image, B 0 Is the distance, A, between two first through holes in another first through hole group in the first transmission electron microscope image 1 Is the distance between two first through holes in one first through hole group in the second transmission electron microscope image, B 1 The distance between two first through holes in the other first through hole group in the second transmission electron microscope image is obtained.
For example, when A is measured from the first transmission electron microscope image and the second transmission electron microscope image, respectively 0 ＝743.5nm、B 0 ＝799.1nm、A 1 ＝734.3nm、B 1 When =798.8nm, β can be calculated from the above formula 1 =1.21%, i.e., the distortion degree of the transmission electron microscope image at the first target magnification with respect to the transmission electron microscope image at the first reference magnification is 1.21%. By adopting the method, the relative image distortion of the transmission electron microscope under any multiplying power can be obtained.
As shown in fig. 2, the size of the first through hole is reduced with the reduction of the transmission electron microscope magnification. When the magnification of the transmission electron microscope is reduced below a specific magnification, a relative error may be introduced when measuring the distance between two first through holes in the first through hole group, which may cause inaccurate characterization of image distortion below the specific magnification. To solve this problem, optionally, the method for characterizing distortion of an image of a transmission electron microscope further includes the following steps:
judging the distortion degree beta of the transmission electron microscope image under the first target multiplying power relative to the transmission electron microscope image under the first reference multiplying power 1 Whether the distance between the two second through holes in any two second through hole groups is larger than the distance between the two first through holes in any one first through hole group or not is judged, if so, a plurality of second through hole groups are formed in the sample, each second through hole group comprises two second through holes penetrating through the sample, the connecting line directions of the two second through holes in any two second through hole groups are different, and the distance between the two second through holes in any one second through hole group is larger than the distance between the two first through holes in any one first through hole group;
acquiring a fourth transmission electron microscope image of the sample at the first target magnification;
acquiring a second reference distance between two second through holes in each second through hole group in the fourth transmission electron microscope image;
acquiring a fifth transmission electron microscope image of the sample under a second target magnification to be characterized, wherein the second target magnification is lower than the first target magnification;
acquiring a second target distance between two second through holes in each second through hole group in the fifth transmission electron microscope image;
and acquiring distortion information of the transmission electron microscope image under the second target multiplying power relative to the transmission electron microscope image under the first target multiplying power according to the plurality of second reference distances and the plurality of second target distances.
Optionally, the second preset value is 1%.
FIG. 3 is a schematic diagram of a second set of through holes and a first set of through holes in accordance with an embodiment of the present invention. Specifically, the image distortion degree at a plurality of different first target magnifications (e.g., 150Kx, 120Kx, etc.) obtained based on the first reference magnification (e.g., 190 Kx) can be selectedAnd a first target magnification with distortion smaller than 1% is used as a reference standard for image distortion representation at a subsequent low magnification. And reforming a plurality of second through hole groups by adopting a method similar to the method taking the first reference magnification as a benchmark, wherein the distance between two second through holes in any second through hole group is larger than the distance between two first through holes in any first through hole group. For example, as shown in FIG. 3, in the fourth TEM image at the selected first target magnification, the distance between the centers of two second through holes C and C' in one second through hole group is C 0 The distance between the centers of the two second through holes D and D' in the other second through hole group is D 0 And C is 0 、D 0 Are all greater than A 0 、B 0 。
In other embodiments, the specific step of forming the plurality of first via groups comprises:
and adjusting the distance between the two first through holes in the first through hole group according to the proportional relation between the first reference multiplying power and the first target multiplying power to be characterized.
Specifically, before the first through hole group is formed, the distance between two first through holes in the first through hole group may also be determined by analyzing a proportional relationship between the first reference magnification and the first target magnification to be characterized, for example, the greater the difference between the first reference magnification and the first target magnification, the greater the distance between two first through holes in the first through hole group, on the one hand, the accuracy of distance measurement between two first through holes may be improved; on the other hand, the image distortion condition under the second target magnification lower than the first target magnification can be characterized subsequently, and the process of forming a second through hole group is avoided.
Furthermore, the present embodiment also provides a device for characterizing image distortion of a transmission electron microscope. FIG. 4 is a block diagram of a device for characterizing distortion of an image of a TEM according to an embodiment of the present invention. The device for characterizing the image distortion of the transmission electron microscope can be used for characterizing the image distortion of the transmission electron microscope by adopting the method shown in figures 1-3. As shown in fig. 1 to 4, the characterization apparatus of a transmission electron microscope according to the present embodiment includes:
the acquiring module 40 is configured to acquire a first tem image of a sample at a first reference magnification and a second tem image of the sample at a first target magnification to be characterized, where the first target magnification is lower than the first reference magnification, the sample has a plurality of first via groups, each first via group includes two first vias penetrating through the sample, and the directions of connection lines between two first vias in any two first via groups are different from each other;
a measurement module 41, configured to obtain a first reference distance between two first through holes in each first through hole group in the first tem image and a first target distance between two first through holes in each first through hole group in the second tem image;
and the analysis module 42 is configured to obtain distortion information of the tem image at the first target magnification relative to the tem image at the first reference magnification according to the plurality of first reference distances and the plurality of first target distances.
Optionally, the sample is a monocrystalline silicon sample; the acquiring module 40 is further configured to acquire a third transmission electron microscope image of the monocrystalline silicon sample at the first reference magnification;
the analysis module 42 is further configured to determine, according to the third tem image, whether the distortion of the tem image at the first reference magnification is smaller than or equal to a first preset value, and if not, debug the tem image.
Optionally, the third tem image is the single crystal silicon sample at [110]]Off-axis images; the measurement module 41 is further configured to obtain a (1-11) interplanar spacing d in the third transmission electron microscope image 1 And (-111) interplanar spacing d 2 ；
The analysis module 42 is further configured to calculate a distortion β of the tem image at the first reference magnification according to the following formula 0 ：
β 0 ＝(d1/d2-1)×100％。
Optionally, the first preset value is 0.5%.
Optionally, the number of the first through hole groups is 2, four first through holes surround to form a quadrangle, and a connecting line between two first through holes in each first through hole group is a diagonal line of the quadrangle.
Optionally, the measuring module 41 is further configured to obtain a distance a between two first through holes in one first through hole group in the first transmission electron microscope image 0 A distance B between two first through holes in another first through hole group in the first transmission electron microscope image 0 A distance A between two first through holes in one first through hole group in the second transmission electron microscope image 1 A distance B between two first through holes in another first through hole group in the second transmission electron microscope image 1 ；
The analysis module 42 is further configured to calculate a distortion β 1 of the tem image at the first target magnification relative to the tem image at the first reference magnification by using the following formula:
β 1 ＝(A 0 B 1 /A 1 B 0 -1)×100％。
in the characterization method and the characterization apparatus for distortion of tem images provided in this embodiment, a plurality of via groups are formed in a sample, and each via group includes two through holes penetrating through the sample, and a distance between two through holes in a via group at a reference magnification is used as a reference value, and a target distance between two through holes in the via group at a target magnification is compared with the reference value, so that distortion of the tem image at the target magnification lower than the reference magnification can be obtained.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (14)
1. A characterization method of transmission electron microscope image distortion is characterized by comprising the following steps:
providing a sample;
forming 2 first through hole groups, wherein each first through hole group comprises two first through holes penetrating through the sample, four first through holes surround to form a quadrangle, and a connecting line between the two first through holes in each first through hole group is a diagonal line of the quadrangle;
acquiring a first transmission electron microscope image of the sample at a first reference multiplying power and a second transmission electron microscope image at a first target multiplying power to be characterized, wherein the first target multiplying power is lower than the first reference multiplying power;
acquiring a first reference distance between two first through holes in each first through hole group in the first transmission electron microscope image and a first target distance between two first through holes in each first through hole group in the second transmission electron microscope image;
calculating a distortion degree beta of the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification using the following formula 1 ：
β 1 ＝(A 0 B 1 /A 1 B 0 -1)×100％；
In the formula, A 0 For one of said first transmission electron microscope imagesDistance between two first through holes in a group of through holes, B 0 Is the distance, A, between two first through holes in another first through hole group in the first transmission electron microscope image 1 Is the distance between two first through holes in one first through hole group in the second transmission electron microscope image, B 1 Is the distance between two of the first through holes in the other of the first through hole groups in the second transmission electron microscope image.
2. The method of characterizing transmission electron microscope image distortion according to claim 1, wherein the sample is a monocrystalline silicon sample; before forming a plurality of first through hole groups, the method further comprises the following steps:
acquiring a third transmission electron microscope image of the monocrystalline silicon sample under the first reference multiplying power;
and judging whether the distortion of the transmission electron microscope image under the first reference multiplying power is less than or equal to a first preset value or not according to the third transmission electron microscope image, and debugging the transmission electron microscope if the distortion of the transmission electron microscope image under the first reference multiplying power is not less than or equal to the first preset value.
3. The method for characterizing distortion of a transmission electron microscope image according to claim 2, wherein before determining whether the distortion of the transmission electron microscope image at the first reference magnification is less than or equal to a first predetermined value according to the third transmission electron microscope image, the method further comprises the following steps:
the third transmission electron microscope image is an image of the monocrystalline silicon sample under a [110] tape axis;
obtaining the (1-11) interplanar spacing d in the third transmission electron microscope image 1 And (-111) interplanar spacing d 2 And calculating the distortion degree beta of the transmission electron microscope image under the first reference multiplying power by adopting the following formula 0 ：
β 0 ＝(d 1 /d 2 -1)×100％。
4. The method of characterizing transmission electron microscope image distortion according to claim 2, wherein the first predetermined value is 0.5%.
5. The method of characterizing transmission electron microscope image distortion according to claim 1, wherein the step of forming a plurality of first via sets comprises:
and adjusting the distance between the two first through holes in the first through hole group according to the proportional relation between the first reference multiplying power and the first target multiplying power to be characterized.
6. The method of characterizing transmission electron microscope image distortion according to claim 1, wherein the step of forming a plurality of first via sets comprises:
and irradiating the sample by using a focused electron beam to form a plurality of first through hole groups.
7. The method for characterizing distortion of an image obtained by a transmission electron microscope according to claim 1, wherein the step of obtaining a first reference distance between two first through holes in each first through hole group in the first transmission electron microscope image comprises:
and acquiring the distance between the centers of the two first through holes in each first through hole group in the first transmission electron microscope image as the first reference distance.
8. The method of characterizing transmission electron microscope image distortion according to claim 1, further comprising the steps of:
judging the distortion degree beta of the transmission electron microscope image under the first target multiplying power relative to the transmission electron microscope image under the first reference multiplying power 1 Whether the second through hole group is smaller than or equal to a second preset value or not is judged, if yes, a plurality of second through hole groups are formed in the sample, each second through hole group comprises two second through holes penetrating through the sample, and any two second through holes are formed in the sampleThe connecting directions of the two second through holes in the through hole groups are different from each other, and the distance between the two second through holes in any one second through hole group is larger than the distance between the two first through holes in any one first through hole group;
acquiring a fourth transmission electron microscope image of the sample at the first target magnification;
acquiring a second reference distance between two second through holes in each second through hole group in the fourth transmission electron microscope image;
acquiring a fifth transmission electron microscope image of the sample under a second target magnification to be characterized, wherein the second target magnification is lower than the first target magnification;
acquiring a second target distance between two second through holes in each second through hole group in the fifth transmission electron microscope image;
and acquiring distortion information of the transmission electron microscope image under the second target multiplying power relative to the transmission electron microscope image under the first target multiplying power according to the plurality of second reference distances and the plurality of second target distances.
9. The method of characterizing transmission electron microscope image distortion according to claim 8, wherein the second predetermined value is 1%.
10. The method of characterizing transmission electron microscope image distortion according to claim 1, wherein the first reference magnification is a magnification greater than or equal to 190 Kx.
11. An apparatus for characterizing distortion in a transmission electron microscope image, comprising:
the device comprises an acquisition module, a storage module and a processing module, wherein the acquisition module is used for acquiring a first transmission electron microscope image of a sample at a first reference multiplying power and a second transmission electron microscope image of the sample at a first target multiplying power to be characterized, the first target multiplying power is lower than the first reference multiplying power, the sample is provided with 2 first through hole groups, each first through hole group comprises two first through holes penetrating through the sample, the four first through holes surround to form a quadrangle, and a connecting line between the two first through holes in each first through hole group is a diagonal line of the quadrangle;
a measuring module for obtaining a distance A between two first through holes in one first through hole group in the first transmission electron microscope image 0 A distance B between two first through holes in another first through hole group in the first transmission electron microscope image 0 A distance A between two first through holes in one first through hole group in the second transmission electron microscope image 1 A distance B between two first through holes in another first through hole group in the second transmission electron microscope image 1 ；
An analysis module for calculating a distortion degree beta of the transmission electron microscope image at the first target magnification relative to the transmission electron microscope image at the first reference magnification by using the following formula 1 ：
β 1 ＝(A 0 B 1 /A 1 B 0 -1)×100％。
12. The apparatus for characterizing transmission electron microscope image distortion according to claim 11, wherein the sample is a monocrystalline silicon sample; the acquisition module is further used for acquiring a third transmission electron microscope image of the monocrystalline silicon sample under the first reference multiplying power;
and the analysis module is also used for judging whether the distortion degree of the transmission electron microscope image under the first reference multiplying power is less than or equal to a first preset value or not according to the third transmission electron microscope image, and if not, debugging the transmission electron microscope.
13. The apparatus of claim 12, wherein the third tem image is a tem imageThe monocrystalline silicon sample is [110]]Off-axis images; the measuring module is also used for acquiring the (1-11) interplanar spacing d in the third transmission electron microscope image 1 And (-111) interplanar spacing d 2 ；
The analysis module is also used for calculating the distortion degree beta of the transmission electron microscope image under the first reference multiplying power by adopting the following formula 0 ：
β 0 ＝(d 1 /d 2 -1)×100％。
14. A device for characterizing distortion of an image in a transmission electron microscope as claimed in claim 13, wherein the first predetermined value is 0.5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911403921.1A CN111024739B (en) | 2019-12-31 | 2019-12-31 | Characterization method and characterization device for image distortion of transmission electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911403921.1A CN111024739B (en) | 2019-12-31 | 2019-12-31 | Characterization method and characterization device for image distortion of transmission electron microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111024739A CN111024739A (en) | 2020-04-17 |
| CN111024739B true CN111024739B (en) | 2023-03-21 |
Family
ID=70196600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911403921.1A Active CN111024739B (en) | 2019-12-31 | 2019-12-31 | Characterization method and characterization device for image distortion of transmission electron microscope |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111024739B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112863980B (en) * | 2021-01-05 | 2022-04-12 | 长江存储科技有限责任公司 | Calibration method and calibration device for characteristic dimension scanning electron microscope machine |
| CN112986290B (en) * | 2021-02-23 | 2024-03-01 | 长江存储科技有限责任公司 | Inspection method of transmission electron microscope |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2742264C3 (en) * | 1977-09-20 | 1981-04-30 | Fa. Carl Zeiss, 7920 Heidenheim | Method for imaging an object with low magnification by means of a particle beam device, in particular an electron microscope and particle beam device for carrying out the method |
| JP2002184336A (en) * | 2000-12-12 | 2002-06-28 | Hitachi Ltd | Charged particle beam microscope device, charged particle beam application device, charged particle beam microscopic method, charged particle beam inspection method and electron microscope |
| JP4801518B2 (en) * | 2006-07-07 | 2011-10-26 | 株式会社日立ハイテクノロジーズ | Charged particle beam microscopic method and charged particle beam apparatus |
| CN103119496A (en) * | 2010-09-29 | 2013-05-22 | 应用精密公司 | Calibration targets for microscope imaging |
| CN107525652B (en) * | 2016-06-22 | 2021-05-04 | 北京疯景科技有限公司 | Lens distortion testing method, device and system |
| CN107590787B (en) * | 2017-09-11 | 2020-06-02 | 华中科技大学 | Image distortion correction method of scanning electron microscope |
| CN107946237A (en) * | 2017-11-23 | 2018-04-20 | 长江存储科技有限责任公司 | Three-dimensional storage organization bus connection method, storage organization, memory and electronic equipment |
| CN109995998B (en) * | 2019-01-03 | 2020-06-12 | 中国科学院生物物理研究所 | Automatic focusing method suitable for scanning/transmission electron microscope imaging |
| CN110579340B (en) * | 2019-09-17 | 2021-04-09 | 长江存储科技有限责任公司 | Method for judging magnification of transmission electron microscope and method for calibrating magnification of transmission electron microscope |
-
2019
- 2019-12-31 CN CN201911403921.1A patent/CN111024739B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111024739A (en) | 2020-04-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Britton et al. | Factors affecting the accuracy of high resolution electron backscatter diffraction when using simulated patterns | |
| Dixson et al. | Traceable calibration of critical-dimension atomic force microscope linewidth measurements with nanometer uncertainty | |
| CN111024739B (en) | Characterization method and characterization device for image distortion of transmission electron microscope | |
| Postek et al. | Does your SEM really tell the truth?—How would you know? Part 1 | |
| US20090212215A1 (en) | Scanning electron microscope and method of measuring pattern dimension using the same | |
| US10281826B2 (en) | Determination of lithography effective dose uniformity | |
| US8742345B1 (en) | Method for detecting electron beam of scanning electron microscope and for detecting fine patterns | |
| Kondo et al. | Massive metrology and inspection solution for EUV by area inspection SEM with machine learning technology | |
| KR20100049799A (en) | Method for inspecting critical dimension uniformity at the high speed measurement | |
| Zhao et al. | Massive metrology using fast e-beam technology improves OPC model accuracy by> 2x at faster turnaround time | |
| US20050220362A1 (en) | Method of precision calibration of a microscope and the like | |
| JP2000311645A (en) | Electron microscope | |
| US6414308B1 (en) | Method for determining opened/unopened semiconductor contacts using a scanning electron microscope | |
| Chen et al. | DCM: device correlated metrology for overlay measurements | |
| US6807314B1 (en) | Method of precision calibration of a microscope and the like | |
| TW202225640A (en) | Three-dimensional reconstruction of a semiconductor specimen | |
| JP3070745B2 (en) | Defect inspection method and apparatus, and semiconductor manufacturing method using the same | |
| CN112986290B (en) | Inspection method of transmission electron microscope | |
| US11145556B2 (en) | Method and device for inspection of semiconductor samples | |
| TW200845150A (en) | A method of real-time monitoring implantation | |
| Hitomi et al. | Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process | |
| US7054000B2 (en) | Method of calibration of magnification of microscopes having different operational principles for bringing them into a single, absolute scale | |
| Reynolds | Preliminary evaluation of the KLA/Micrion 808 one step clear and opaque defect repair system | |
| Maas et al. | Sub-50 nm metrology on extreme ultra violet chemically amplified resist—A systematic assessment | |
| Tong et al. | Uncertainties in scanning electron microscopy-dimensional measurement calibration and angular measurement with EBSD |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |