JP2000311645A - Electron microscope - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve focal point correction precision by applying Fourier transformation to a pair of images having a positional drift, calculating a phase difference image, and calculating the center of gravity position of the δ-like peak appearing on the inverse Fourier transformation image or the Fourier transformation image of this image. SOLUTION: First and second TEM images changed with the incidence angle of an electron beam to a sample by a radiation system electron deflecting coil 13 provided above an objective lens 13 are photographed by an electron beam detector 17. The photographed first and second TEM images are transmitted to a positional drift analyzing arithmetic unit 20 based on the phase difference analysis of a Fourier transformation image, and the positional drift D of the analysis result is sent to a computer 19 loaded with control software and image process software. A focal point drift F is calculated from the positional drift D by the computer 19 loaded with the control software and image process software, an objective current Iobj required for setting the aimed focal point is determined, and the focal point of the objective lens 14 is corrected based on it.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for automatically correcting a focal point and a moving amount using an image of an electron microscope.

[0002]

2. Description of the Related Art The applicant of the present invention has proposed an apparatus for determining whether or not to automatically correct a focal point and a moving amount by using an image of an electron microscope and correcting the same. As for the amendment, as a result of conducting a prior art search, three related items were found. The first is Norihiko Ichise et al., Drift correction for automatic adjustment of transmission electron microscope by phase spectrum method in May 1995 (26-II
No. -1015) discloses that a change in image due to a phase spectrum can be detected, so that defocus is measured. However, there is no disclosure about the determination using the correlation value or the correction of the focus and drift when the sample stage is continuously moved. The second case is JP-A-10-134196.
A device for analyzing a position shift between images based on a phase difference between Fourier transform images of two images captured under different conditions is disclosed. However, it discloses only a distance measurement for an object such as a car or a person, and does not disclose returning to an electron beam device including a technical idea. The third case is JP-A-61-281446, in which the amount of displacement due to parallax of an electron microscope image is detected by image processing.
It is disclosed to return the result to an electron beam device. However, there is no disclosure of a displacement analysis method using a phase difference of a Fourier transform image. More specifically, when the sample is located at the focal plane, there is no movement between the images before and after the change in the electron beam incident angle. Transfer between occurs. α is the swing angle of the incident electron beam, M is the magnification, and Cs is the spherical aberration coefficient.
There is a relationship of (F + Csα ² ), and if the positional deviation D due to parallax can be measured, the defocus F is obtained. There is a description of an apparatus that records the image pair before and after the change of the incident angle in the memory, analyzes the position shift D using the cross-correlation method or the least squares method, obtains the focus shift F, and corrects the focus of the objective lens. There is no disclosure of a displacement analysis method using a phase difference of a Fourier transform image.

[0003]

The performance of an apparatus for automatically correcting an electron microscope from a displacement D between electron microscopes, such as a focus analysis using parallax, greatly depends on a method of analyzing the displacement D. The accuracy of position shift analysis methods, such as the cross-correlation method and the least-squares method, which have been used for electron microscope image analysis, is limited by the size of one pixel of the electron beam detector. The length of one side of one pixel of a CCD camera used for current electron microscope image capturing is about 25 μm. The defocus F corresponding to one pixel depends on the incident electron beam angle and the magnification, but the incident angle change α is at most 0.
It is about 5 °, and the magnification must be the actual observation magnification. For example, at a magnification of 5,000 and an incident angle change of 0.5 °, the focal length corresponding to the displacement D of one pixel is about 0.6 μm.
This is lower than the focus correction accuracy by a skilled operator. It is not practical to improve the performance of the apparatus such as making the image used for the displacement analysis finer to improve the accuracy in the focus analysis, because the analysis time and the apparatus cost increase extremely.

In addition, the conventional displacement analysis method does not have a function for numerically confirming whether or not the analysis has been performed correctly. I had no choice but to confirm. Since the automatic correction device does not guarantee that all the analysis is performed correctly, a function to stop the correction when the reliability of the analysis result is poor is required.

Further, in the conventional displacement analysis method, if the background greatly changes or a shadow of the objective stop enters the image, analysis becomes impossible. The above-mentioned phenomenon is a phenomenon that occurs daily in TEM observation, and inoperability due to this phenomenon poses a practical problem.

[0006]

According to the present invention, the following positional deviation analysis method is employed in a focus correction system using parallax.

[0007] Fourier transform is performed on each image of the image pair having a position shift, and a phase difference image is calculated. In the analysis image obtained by performing the inverse Fourier transform or the Fourier transform on the phase difference image, a δ-like peak is generated at a position corresponding to the displacement. Since it can be assumed that only δ-like peaks exist in the analysis image, other than δ-like peaks can be regarded as noise components. Therefore, if the position of the center of gravity of the δ-like peak is calculated, the position of the δ-like peak can be correctly obtained even if it includes the decimal point. Further, the intensity of the δ-like peak calculated after normalizing the intensity of the analysis image can be used as a correlation value indicating the degree of coincidence of the images.

[0008]

Embodiment 1 FIG. 19 is a basic configuration diagram of a transmission electron microscope (hereinafter abbreviated as TEM) used in an embodiment of the present invention. Electron gun 11 and its control circuit 11 ', irradiation lens 12 and its control circuit 1
2 ′, irradiation system electron deflection coil 13 and its control circuit 13 ′,
Objective lens 14 and its control circuit 14 ', projection lens 15 and its control circuit 15', imaging system electron deflection coil 16 and its control circuit 16 ', electron beam detector 17 and its control circuit 17', sample stage 18 and The control circuit 18 'includes a computer 19 equipped with control software and image processing software. Each control circuit receives a control command sent from the control software of the computer 19, and sends a return value to the computer when the control is completed. The electron beam detector 17 is an electron beam detector composed of a number of pixels, such as a CCD camera, and the obtained image signal is based on a recording device of the computer 19 or a phase analysis of a Fourier transform image by a cable for image transmission. It is transmitted to the position shift analysis computing unit 20 at high speed. The computer 19 is connected to an arithmetic unit 20 for analyzing the displacement based on the phase analysis of the Fourier transform image.

FIG. 3 shows a flowchart of TEM image photographing. First, an acceleration voltage is applied to the electron beam generated by the electron gun 11 and applied to the electron beam.
Adjustment is performed using the irradiation system electron beam deflection coil 13 so that the electron beam passes on the optical axis, and it is confirmed that the electron beam reaches the electron beam detector 17. A direction parallel to the optical axis is defined as az direction, and a plane orthogonal to the optical axis is defined as an xy plane. Next, after adjusting the irradiation system lens 12, the sample 21 is inserted, and after confirming the TEM image of the sample 21 at a low magnification, an objective aperture is inserted into the optical axis in order to increase the TEM image contrast. Select the observation field of view while increasing the magnification of the projection lens 15, perform focus correction, and
Take the M image.

A focus analysis method using parallax is applied to the focus analysis in the focus correction. A first TEM image obtained by capturing an electron beam at a first angle substantially parallel to the optical axis, and a second TEM image captured by capturing an electron beam at a second angle inclined from the optical axis by an angle α. Is used. As shown in FIG. 4, if the focus is shifted, an image position shift occurs between the first TEM image and the second TEM image. D = M for defocus F and displacement D due to parallax
α (F + Csα ² ). The magnification M and the swing angle α are set by the operator. Since the spherical aberration coefficient Cs is specific to the apparatus, if the positional deviation D between the image pairs can be measured, the defocus F can be specified. The present invention is characterized in that an analysis method based on a phase difference analysis of a Fourier transform image is applied to the analysis of the displacement D. As shown in FIG. 1, first and second TEM images obtained by changing an incident angle of an electron beam with respect to a sample using an electron deflection coil 13 provided above an objective lens 14 using an electron beam detector 17. To shoot. The photographed first and second TEM images are used for a position shift analysis computing unit based on a phase difference analysis of a Fourier transform image.
The position shift D is transmitted to the computer 20, and the analysis result is transmitted to the computer 19. The computer 19 calculates the focus shift F from the position shift D, obtains an objective current Iobj necessary for setting a target focus, and corrects the focus of the objective lens 14 based on the obtained current.

FIG. 5 is an explanatory diagram of a displacement analysis method using a phase component of the Fourier transform. Assuming that S1 (n, m) = S2 (n + dx, m + dy) for an image pair (S1, S2) with a displacement D = (dx, dy), S1 (n, m), S2 Let the two-dimensional discrete Fourier transform of (n, m) be S
1 '(k, l) and S2' (k, l). F {S (n + d
x, m + dy)} = F {S (n, m)} exp (idxk + idyl)
S1 '(k, l) = S2' (k, l) exp (idxk + idyl). That is, the displacement between S1 '(k, l) and S2' (k, l) is the phase difference exp (idxk
+ idyl) = P ′ (k, l). P '(k, l) has a period of (d
Since it is also a wave of (x, dy), a delta-like peak is generated at the position (dx, dy) in the image P (n, m) obtained by performing an inverse Fourier transform of the phase difference image P ′ (k, l). If (dx, dy) has a decimal point, for example
At (dx, dy) = (2.5,2.5), the intensity of the δ-like peak is (2,2), (2,
3), (3,2), (3,3). The image P (n, m) has δ
Since it can be assumed that only the peaks exist, if the centroid of the four pixel intensities is calculated, the position of the δ-peak can be correctly obtained even if it includes the decimal point. In the cross-correlation method, which is a conventional analysis method, | S1 ′ || S2 ′ | is used as an analysis image, and a position shift is analyzed from a position having a maximum value in the analysis image. However, since the analysis image contains the image intensity, that is, the amplitude information, together with the displacement information, the accuracy of the displacement analysis does not improve even if the center of gravity is calculated. Note that instead of removing all amplitude information, S1 '(k, l) ^* S2' (k, l) ^* = | S
Log or に for the amplitude component of 1 '|| S2' | exp (idxk + idyl)
Calculates an image in which the amplitude component is suppressed by performing the processing of, and the position of the displacement vector is obtained even when the image is subjected to the inverse Fourier transform.
Since a δ-like peak occurs at (dx, dy), the image may be subjected to a displacement analysis. Even if the phase difference image P ′ (k, l) is Fourier-transformed, a δ-like peak occurs at (dx, dy),
The displacement analysis may be performed on the Fourier transform image of the phase difference image P ′ (k, l).

Note that the difference between S1 (n, m) and S2 (n, m) includes not only displacement but also noise components and changes in background, and slight image deformation due to changes in incident electron beam angle. , Even if S1 (n, m) and S2 (n, m) have sufficient common parts, the displacement analysis can be performed. In this case δ
The peaks other than the typical peak are regarded as noise components. After normalizing the intensity of the entire image P (n, m), when calculating the intensity of the δ-like peak, the peak intensity is weak when the noise component, that is, the common portion between the image pairs is large, and the noise component, that is, the common portion, is low. If less, the peak intensity becomes stronger. If this peak intensity is specified as a correlation value, the operator can identify the noise component ratio, that is, the reliability of the analysis result. Set the lower limit of the correlation value,
If the calculated correlation value is equal to or less than the lower limit value, setting is made so that the adjustment of the objective lens is not performed, thereby preventing malfunction.

Further, since the above-described displacement analysis method is an analysis method using a phase component of an image, it has a feature that it is hardly affected by a background change. In the conventional displacement analysis method, analysis is impossible if there is a difference in background due to the distribution of irradiation current density between image pairs, but the displacement analysis method used in the present invention can analyze. Also, in the conventional displacement analysis method, if the shadow of the objective aperture is mixed in the image, the analysis cannot be performed. If there are enough parts, it can be analyzed. Since the automatic correction device can be used by a person who is unfamiliar with the TEM operation, it is important that the automatic correction device can operate even if the TEM adjustment is somewhat inadequate.

In order to perform the above-described displacement analysis, a TEM
The image is captured by an electron beam detector 17 such as a CCD camera. The signal detected by the electron beam detector 17 is amplified by an amplifier, quantized, and sent to a computer 19 or an arithmetic unit 20 for analyzing a displacement based on a phase difference analysis of a Fourier transform image.
Here, if the gain and offset of the amplifier are improperly set, many features of the image may be removed during quantization. The electron beam detector 17 has a function of calculating an image intensity average value and a variance, and automatically adjusting the average value and the variance by using a gain and an offset of the detector amplifier so that the values become designated values. Note that the gain and offset may not reach the specified average and variance, so if the contrast adjustment is insufficient, a warning is sent to the operator to change the field of view, TE
A function for asking for re-adjustment of the M body is also added.

FIG. 6 shows a basic configuration diagram of the electron beam detector 17 used in the TEM. It comprises a scintillator 71, a coupling part 72, and a CCD camera 73. The electrons applied to the scintillator 71 generate photons. The generated photons are transmitted to the CCD camera 73 while maintaining the positional information through the coupling portion 72 in which a number of optical fibers are bundled. The CCD camera 73 is composed of a large number of pixels arranged two-dimensionally. CCD camera 7
The charge generated by the photons that have reached 3 is accumulated in each pixel. The accumulated charge is read as an output signal of each pixel. The gain of each pixel, that is, the output signal intensity due to one incident electron, depends on the luminous efficiency of the scintillator 71,
It is determined by the transmission efficiency 72 and the quantum efficiency of the CCD camera 73. Since each constant varies from one pixel to another, a fixed pattern is formed on the electron beam detector 17.

The image captured by the electron beam detector 17 having the fixed pattern has a first contrast reflecting the sample structure and a second contrast reflecting the fixed pattern of the electron beam detector 17.
Is recorded. When the above-described displacement analysis is applied to an image recorded by the electron beam detector 17 having a fixed pattern, the first contrast reflecting the sample structure becomes the image pair S1 (n, m) and S2 (n, m). However, since the second contrast reflecting the fixed pattern of the electron beam detector 17 does not move, the first peak due to the sample structure in the analysis image P (n, m) corresponds to the displacement. A second peak due to the fixed pattern is generated at the origin at the same position. TE
In an image in which the contrast of a sample structure is very low, such as an M image, the second peak intensity due to the fixed pattern is often larger than the first peak intensity due to the sample structure. The above-mentioned misalignment analysis method has been applied to images with high sharpness and contrast captured by optical devices, and there was almost no effect of fixed patterns.
The peak having the maximum intensity in the analysis image P (n, m) was determined to be the analysis result. However, the effect of the fixed pattern cannot be ignored in the TEM image, and the conventional peak determination method, which uses the peak with the highest intensity as the analysis result, determines the second peak due to the fixed pattern as the analysis result. Is often issued.

In some cases, the CCD camera control software is provided with preprocessing such as gain normalization for dividing an image by a fixed pattern photographed in advance and reducing the influence of the fixed pattern. However, since the fixed pattern changes with time, it needs to be updated periodically. In order to reduce the influence of the fixed pattern, it is necessary to always perform maintenance. Further, even when maintenance is performed, a change in the fixed pattern due to a difference in individual imaging conditions such as the amount of electron beam irradiation is inevitable. Even though the gain normalization alone can reduce the effect of the fixed pattern, it is difficult to remove it. In an image having a low contrast of the sample structure such as an electron microscope image, even if image processing such as gain normalization is performed on the image pair S1 (n, m) and S2 (n, m), the first pair due to the sample structure is Also, the intensity of the second peak due to the fixed pattern may increase.

In the displacement analysis of the TEM image, it is necessary to add a step of automatically determining the first peak due to the sample structure from the analysis image having the first peak due to the sample structure and the second peak due to the fixed pattern. There is. There are the following two algorithms for automatic peak determination. In both cases, the advantage is utilized that the second peak due to the fixed pattern always occurs at the origin.

First, in one method, since the second peak due to the fixed pattern always occurs at the origin, the intensity at the origin is set to 0.
Alternatively, it is a method of applying an origin mask to be replaced with another constant value. However, since the first peak may occur at the origin, it is necessary to determine whether to apply the origin mask. Here, assuming a specific example shown in FIG. 7, a flow of specifying a peak will be described. It is assumed that the position D1 and the intensity I1 of the first peak 31 according to the sample structure and the position D2 and the intensity I2 of the second peak 32 according to the fixed pattern are assumed. Since D2 = 0, it is assumed that | D1 |> 0 and I1> I2 (FIG. 7A),
1 |> 0 and I1 <I2 (FIG. 7 (b)), and | D1 || = 0 (FIG.
(c)). In each case, the analysis image P (n, m) was normalized and the intensity I of the maximum peak 33 searched and the analysis image P (n, m) was subjected to the origin mask, and then normalized and searched. The intensity I ′ of the peak 34 having the maximum intensity is compared. Fig. 7 (a)
In this case, if the intensity of the second peak is negligibly small, the intensity of the peak having the maximum intensity does not change before and after the application of the origin mask, and if the intensity of the second peak is strong, the intensity of the second peak is changed to the second peak 32 by applying the origin mask. Since the broken intensity moves to the first peak 31 and the noise component 35, I ≦ I ′. In the case of FIG. 7B, the first peak 3 before applying the origin mask.
Since the intensities assigned to the first and second peaks 32 are combined into the first peak 31, I <I ′. On the other hand, FIG.
In the case of (1), when the origin mask is applied, the noise is removed to the first peak 31 together with the second peak 32, and only the noise component 35 increases, so that I> I ′. As described above, the first peak 31 can be determined by comparing the analysis results before and after the application of the origin mask.
FIG. 8A shows a flow of the peak determination step. Compare the maximum peak intensity before and after application of the origin mask, that is, the correlation value. If not, the result after applying the origin mask is used.

As a second method, there is a method in which it is assumed that there are two peaks in the analysis image P (n, m) and the position and intensity of the two peaks are set to be output. In addition,
If there are two peaks, each correlation value becomes small, so it is better to reset the correlation value lower limit. FIG. 8B shows the flow of the two peak detection steps. FIG. 7 (a) and FIG. 7 (b)
Then, the peaks larger than the lower limit of the correlation value are the first peak 31 and the second peak 31
Since the peak is 32, two peaks are output. | D1 |> |
Since D2 | = 0, if the position shift amount of the output peak is selected, the first peak is selected. In the case of FIG. 7 (c), since the first peak and the second peak overlap, only one peak exists in P (n, m). If there is only one peak having a correlation value larger than the lower limit, that peak is used as the analysis result.

Next, the swing angle α is set. Since the swing angle α of the electron beam incident on the sample is used when obtaining the defocus F from the positional shift D due to parallax, the swing angle α can be accurately determined. Must be set. The swing angle α is measured using a diffraction image of a crystalline sample having a known lattice constant, such as gold or silicon. Since the lattice constant is known, the scattering angle per pixel of the diffraction image can be calculated if the wavelength of the incident electron beam is known. Position shift D between the first diffraction image taken at the first angle of incidence and the second diffraction image taken at the second angle of incidence
_{If α} is analyzed and the product of the displacement _Dα and the scattering angle per pixel is calculated, it becomes the actually measured value of the swing angle α of the incident electron beam. Although the swing angle α of the incident electron beam is substantially proportional to the current value _IBT of the irradiation system electron deflection coil 13, the irradiation system electron deflection coil 13 is provided above the objective lens 14 as shown in FIG. Therefore, the angle of incidence on the sample also changes due to the electromagnetic field of the objective lens 14. Swing angle α of incident electron beam
It is necessary to introduce a correction term in which the exciting current _Iobj value of the objective lens 14 is used as a parameter in the calculation formula. For example, α = A * I _BH
Use + B * I _obj * I _BH . Here, A and B are device-specific constants.

The magnitude of the swing angle α is as follows.
Is larger, the focus shift F corresponding to the image position shift D becomes larger, and the analysis accuracy of the focus shift F is expected to be improved.
The reduction of the common part in the image pair causes a malfunction. When the common portion is less than half of the entire image, the correlation value decreases, and the reliability of the analysis result is extremely reduced. Therefore, it is necessary to set the positional shift D due to parallax to less than half the length of one side of the CCD camera. . When the assumed defocus range is wide even at the same magnification, that is, the swing angle α is set small in the coarse adjustment, and when the assumed defocus range is narrow, that is, in the fine adjustment, the swing angle α is set large. For example, the assumed defocus range is 20
μm range, one side of electron beam detector is 2cm, magnification is 5
If it is 0,000, the swing angle α needs to be 0.5 ° or less.

Since the defocus F is larger than expected, the common part of the two images is reduced, and the analysis may not be possible. In order to cope with such a situation, a lower limit value of the peak intensity is provided, and when the calculated peak intensity becomes equal to or less than the lower limit value, the magnification is reduced, the common part is increased, and preliminary focus correction is performed. A flow is provided in which after the defocus amount F is reduced, the magnification is returned to the original magnification and the measurement is performed again. As a method of increasing the common portion, there is a method of reducing the swing angle α.

In TEM, observation is often performed with an objective aperture inserted in the optical axis in order to increase image contrast.
If the incident direction of the electron beam is changed, the electron beam may deviate from the optical axis and may not pass through the stop. In order for both the electron beam at the first incident angle and the electron beam at the second incident angle to pass through the aperture, the swing angle α must be set smaller than the hole diameter of the aperture. For example, if the aperture has a hole diameter of about 10 μm, the swing angle α needs to be set to 0.5 ° or less.

Further, since the second TEM image is taken with the incident electron beam inclined, the swing angle α of the incident electron beam is obtained.
Is too large, the image of the second TEM image is distorted due to the influence of the axis shift, and the common portion with the first TEM image is extremely reduced, so that analysis may be impossible. In this case, it is necessary to reset the swing angle α to a smaller value.

The magnification M is also necessary for calculating the defocus F. TE
M usually has a magnification error of about 5%. Also scintillator 7
When an optical lens is used for the coupling portion 72 between the CCD camera 73 and 1, a magnification error of the optical lens also occurs. So the magnification
Consider the effect on the focus analysis error when there is an error of M (1 + Δ), that is, Δ. For example, assume that the displacement D1 has been measured. Originally the defocus F1 is D1 / [M (1 + Δ ) α] -1 -C s α 2, is calculated defocus F1 '= D1 / [Mα] -1 -C s α 2.
Analysis error of defocus F due to magnification error is F1−F1 ′ = − ΔD1
/ (1 + Δ) Mα. That is, the focus analysis error due to the magnification error is proportional to the displacement D1. That is, when the displacement D = 0, the focus analysis error due to the magnification error is minimized. Therefore the positional displacement D = 0, try repeatedly focus correction to F _s = -C _s α ^2. After the defocus F1 'has been analyzed, the focus is shifted to F _s
Is set as (F1-F1 ') + Fs.
When the displacement D2 is measured in this state, D2 = -ΔD1.
Since the magnification error Δ of the TEM is about 5%, if the focus correction is repeated several times, it will converge to the positional deviation D 位置 = 0. Above, displacement D
If the objective lens is corrected so as to be equal to 0 and then the float is set to the designated optimal focus, it can be seen that the focus analysis error due to the magnification error is sufficiently reduced.
It should be noted that the positional deviation D = 0, not the positional deviation D = 0, for example, F =
Becomes 0 after the D = MC _s α ^3, may flow to set the Optimum focus. In this case, the influence of the second peak due to the fixed pattern is reduced as well as the influence of the magnification error. Also when the number of corrections of defocus F = 0 is set to the second time or more, the direction of the n-th to the analyzed defocus F _n is greater than defocus F _n-1, which is analyzed to n-1 th Also, a function of stopping the focus correction is added. As a result, the number of corrections can be minimized.

In consideration of the above, focus correction is executed according to the flowchart shown in FIG. First, a field of view for focus analysis is selected. This selection also includes settings such as the observation magnification and the objective aperture. Next, setting of the optimum focus, the correlation value lower limit, the swing angle α, and the number of corrections is performed using the screen shown in FIG. The computer sets recommended values, that is, initial values, of the optimum focus, the lower limit of the correlation value, the swing angle α, and the number of corrections, but the operator can change the values as necessary. Optimum focus is usually set to F = 0, but depending on the sample, it may be better to observe under focus. The swing angle α is 0.5, which is the maximum swing angle that can pass through the objective aperture having a hole diameter of 10 μm.
Although it is set to °, the effect of image distortion due to a change in the angle of the incident electron beam is large depending on the field of view, and it may be better to set the swing angle α to a small value. The lower limit of the correlation value also depends on shooting conditions such as the number of pixels of the analysis image. In order to optimize the swing angle α and the correlation value, it is necessary to provide a mode in which only focus analysis is performed and focus correction is not performed. Swing angle α is 0.2-0.
Five degrees is commonly used. The lower limit of the swing angle α is determined by the performance of the apparatus. If the number of times of correction shown in the screen of FIG. 2 is set to 0 and the focus correction execution button 93 is clicked, only measurement is performed. If the operator forgets the recommended value during the parameter change, the recommended value is called up by clicking the button 92 of the initial setting.

After completing the parameter setting, the electron beam detector 17
To capture an image pair. Conventionally, a TEM defocus detection device has a configuration in which an operator observes the vibration of a TEM image when the angle of an incident electron beam is vibrated sinusoidally using an irradiation system electron deflection lens 13. However, a conventional circuit configuration in which a TEM image constantly vibrates cannot capture an image. After receiving the signal instructing the first TEM image capture,
The image capturing is started, and after receiving the signal indicating that the image capturing is completed, the angle of the incident electron beam is changed to the second angle, and the signal indicating that the change is completed is detected by the electron beam detector. A control system for taking in the second image after receiving is received is required. An analysis image P (n, m) is calculated from an image pair captured using the above control system, and a peak corresponding to the displacement is specified.

If a peak due to the displacement cannot be identified, a flow is provided for stopping the focus correction and estimating the cause to give the operator a guide to the next action. The reason why the displacement could not be analyzed was that there was a problem with each image, such as no sample in the field of view or the image was very blurred. In some cases, the common portion between image pairs may be reduced, for example, when D becomes too large, or the image is distorted due to the change in the angle of the incident electron beam. For the determination, the angle of the incident electron beam is set to the first angle, and a fourth TEM image obtained by translating the image by a known amount using the imaging system electron deflection coil 16 is taken. The displacement analysis is performed on the image and the fourth TEM image. If the first TEM image and the fourth TEM image cannot analyze the displacement, it is considered that there is a problem in each image, such as no sample in the field of view or the image is very blurred. In response to this, an instruction is issued to reduce the magnification and execute the preliminary correction at a low magnification. If the magnification is reduced, the field of view widens, so that the probability that the sample exists in the field of view increases. Also, at low magnification, the effect of image blur due to defocus is reduced, and the sharpness of the image is improved, so that a position shift analysis can be performed.
If misregistration analysis can be performed between the first TEM image and the fourth TEM image, it is considered that the cause is a decrease in the common portion between the image pairs, and an instruction to reduce the swing angle α is issued. The error message is displayed on the screen as shown in FIG. 2B, only the correlation value is displayed without displaying the defocus F which could not be analyzed.

When the peak corresponding to the positional deviation can be specified, the positional deviation D is obtained from the peak, the focal point F is calculated using the relationship of D = Mα (F + Csα ² ), and the objective lens current is adjusted. . Since the relationship between the objective lens current and the focal position differs depending on the setting of the projection lens, that is, the observation magnification, a relational table or relational expression between the objective lens current and the focal position at each observation magnification is recorded in the computer. Using the above-mentioned relation table or relational expression, a current necessary for setting a focal point is obtained, and an objective lens current is adjusted. If the number of times of focus correction is set to two or more, an image pair is photographed again, the focus is analyzed, and the objective lens current is adjusted.

The automatic focus correction system according to the present invention is equipped with an arithmetic unit 20 for analyzing a position shift based on a phase difference analysis of a Fourier transform image, which is a digital signal processor. Analysis of misregistration of 256 pixel image is 30msec
It can be executed by Image capture by electron beam detector 17, irradiation system electron deflection coil 13, and objective electron lens
One correction including 14 changes can be executed in one second or less, and continuous automatic correction is possible. Figure 2
The continuous focus correction is started by clicking the continuous execution button shown in (1), and the focus correction is stopped by clicking the button for supporting the stop of the focus correction. Alternatively, clicking the continuous execution button starts continuous focus correction, and clicking the continuous execution button again stops continuous focus correction. Alternatively, if the focus correction execution button 93 is double-clicked, the continuous focus correction starts, and if the execution button 93 is clicked again, the continuous focus correction stops. During the continuous focus correction, the optimum focus is automatically set even if the field of view is changed by moving the sample stage. Note that when the first TEM image and the second TEM image are taken while moving the sample stage,
Displacement due to parallax D and displacement Ds due to sample movement
, The focus correction analysis accuracy is deteriorated, but when the target visual field is found, the sample stage movement is stopped and observation is started, so that the focus correction accuracy required for sample observation can be obtained. If the correction accuracy deterioration due to the movement of the sample stage becomes a problem, the first T image taken for the nth focus analysis
The EM image and the first T taken for the n-1th focus analysis
Measure the moving speed of the sample stage from the displacement of the EM image and n
A position shift Ds due to sample movement between the first TEM image and the second TEM image in the first measurement is predicted, and the first TEM image and the second TEM image are compared with each other.
Of the TEM image of the sample from D + Ds
By extracting the displacement D due to parallax by subtracting
Analyze focus.

The present system has a malfunction check function of not changing the focus when the correlation value is equal to or less than the lower limit value. A TEM image generally has a low S / N, and an image having a low S / N has a high probability of being unable to analyze the displacement. If the cause of the inability to analyze the displacement is stochastic, there is a high possibility that a correct analysis result can be obtained in the next analysis. Therefore, the upper limit value of the number of errors in focus analysis was set, and when the number of times the correlation value became less than the lower limit exceeded the upper limit, the electron beam was blocked by the aperture etc., so the TEM image of the sample structure was taken in the electron beam detector A function has been added to determine that there has been an accident, such as no error, and display an error message on the screen.

During the continuous focus correction operation, the first TEM image at the first incident angle and the second TEM image at the second incident angle are alternately displayed on the screen. The display may be perceived as flickering on the screen, giving the operator discomfort or obstructing the observation of the fine structure. Therefore, only the TEM image observed at the first incident angle is displayed on the screen, and the TEM image observed at the second incident angle is not displayed on the screen.
Alternatively, if the circuit configuration is such that the TEM image observed at the first incident angle and the TEM image observed at the second incident angle are displayed on separate screens, the influence of image distortion due to misalignment of the incident electron beam is required. It can also be confirmed accordingly.

Embodiment 2 FIG. 19 shows a basic configuration diagram of a TEM used in an automatic inspection apparatus. Electron gun 11 and its control circuit 11 ', irradiation lens 12 and its control circuit 12', irradiation system electron deflection coil 13 and its control circuit 13 ', objective lens 14 and its control circuit 14', projection lens 15 and its control circuit 15 ', imaging electron deflection coil
16 and its control software 16 ', an electron beam detector 17 and its control circuit 17', a sample stage 18 and its control circuit 18 ', and a computer 19 equipped with control software and image processing software. Each control circuit receives a control command sent from the control software of the computer, and sends a return value to the computer 19 when the control is completed. An image shift function is provided to translate the TEM image using the irradiation electron deflection coil 13 and the irradiation electron deflection coil 16. The electron beam detector 17 is an electron beam detector composed of tens of thousands of pixels, such as a CCD camera, and the obtained image signal is transmitted to a computer via an image transmission cable.
It is transmitted at high speed to the 19 recording devices or to the arithmetic unit 20 for analyzing the displacement based on the phase analysis of the Fourier transform image. calculator
19 is connected to an arithmetic unit 20 for analyzing the displacement based on the phase analysis of the Fourier transform image, and is equipped with pattern inspection / measurement software.

FIG. 10 shows a processing flow of an automatic inspection apparatus using a TEM. First, an accelerating voltage is applied to the electrons generated by the electron gun 11, and the electron beam is adjusted using the irradiation system electron beam deflection coil 13 so that the electron beam passes on the optical axis.
Confirm that the electron beam reaches. The direction parallel to the optical axis
A plane orthogonal to the z direction and the optical axis is defined as an xy plane. Irradiation lens
After performing the adjustment of 12, the sample 21 is inserted into the sample chamber. Sample 2
1 is thinned so that an electron beam passes therethrough, and then fixed to a metal indicator called a mesh 22 (FIG. 11).
(a)). The mesh 22 is placed on a sample holder, and the sample holder is placed on a sample stage for observation. The diameter of the mesh 22 is about 3 mm, and it is difficult to accurately specify the direction and position and place the mesh 22 on the sample holder. Therefore, an image of the mesh 22 observed at a low magnification is recorded, and the direction, position and shape of the mesh 22 are analyzed according to the flow of FIG. Electrons can pass through a hole area called a hole 23. First, the captured image is binarized, a connected component is obtained, and each region is labeled (FIG. 11B). Next, the area of each label area is calculated. Since the size of the hole is almost constant, the mode value of the area can be specified as the area of the hole. Specifically, of the regions labeled as shown in FIG. 11 (b), the region having an area near the mode is the entire hole 4, 5, 7, 8,
9, 12, and 13 are label areas. The barycenter of the label area where the whole hole 23 is shown to analyze the direction of the mesh 22
Calculate 24. A combination that minimizes the distance between the centers of gravity of the respective regions is obtained (FIG. 11C). For example, the center of gravity of label area 4
The closest to 24 is the center of gravity 24 of the label area 5 and the label area 8. The direction connecting the center of gravity 24 of label area 4 and label area 5
The x direction and the direction connecting the center of gravity 24 of the label area 4 and the label area 8 are specified as the y direction. Since the shape of the hole 23 is known, the length H of one side of the hole 23 can be calculated from the area of the hole 23. Further, the width M of the mesh 22 is calculated by subtracting the length H of one side of the hole 23 from the distance between the closest centers of gravity. After the above steps, a screen is displayed in which the xy direction of the mesh 22 and the horizontal and vertical directions of the screen match. Each hole 23 of mesh 22
Number is displayed. The operator can confirm on this display that labeling has been executed correctly. In addition, the number of the sample 21 can be specified by using this number, that is, the position of the hole 23 to be inspected can be designated, and the inspection is not performed in the other holes, thereby shortening the inspection time.

The presence or absence of a sample in the hole can be automatically determined by image processing. For this determination, a histogram of the image intensity in the hall or a Fourier transform image is used. In the determination using the Fourier transform image, the determination is made based on the ratio of high frequency components in the Fourier transform image. As shown in FIG. 17B, when the sample does not exist in the analysis area, the image intensity slightly varies due to the distribution of the irradiation electron current density and the like, but the Fourier transform image has only low frequency components. When there is a sample, especially a sample with a fine structure like a biological sample,
The ratio of the high-frequency component in the Fourier transform image increases (FIG. 17A). When the ratio of the high-frequency component to the low-frequency component becomes equal to or more than a certain value, it is determined that the sample exists in the analysis area. In the determination using the histogram of the image intensity, the presence or absence of the sample is determined based on the number of peaks existing in the histogram of the image intensity. If the sample does not exist in the hole, the image intensity slightly varies due to the distribution of the irradiation electron current density and the like, but only one peak exists (FIG. 13).
(b)). On the other hand, a plurality of peaks exist in the histogram of the image intensity in which the sample exists in the hole (FIG. 13A). Therefore, when there are a plurality of peaks in the image intensity histogram, it is determined that the sample exists in the hole. In the case of a sample in which peaks overlap due to a very low sample contrast, the presence or absence of the sample is determined based on the half width of the beak.

Before analyzing the direction and shape of the mesh 22,
It is better to adjust the height of the sample holder. There is also a possibility that the sample holder is placed outside the focus range in which the objective lens can be set due to the setting failure of the sample stage 18 or the like. Even if the objective lens is placed within the focal range, if the objective lens current is largely changed, the magnification or the like will change due to a change in lens conditions.
A function of analyzing the height of the sample holder with a focus analyzer described later and automatically adjusting the height of the sample holder using the sample stage control mechanism 18 'is added.

In some cases, the sample holder is inserted obliquely due to inadequate setting of the sample stage 18. If the sample holder is greatly inclined, the observation condition changes depending on the position of the hole in the mesh 22. Therefore, a plurality of points are selected from the mesh 22, and the positions of the points and the sample height obtained from the defocus analysis result are recorded. The tilt angle of the sample holder is calculated from the sample height at each position, and the tilt angle of the sample holder is adjusted. The sample stage control mechanism 18 'is also provided with a function of automatically correcting the tilt of the sample holder.

Next, inspection items are set. In the automatic inspection of living things, the shape and the number of viruses are often searched. Inspection items such as image preprocessing and geometric features to be measured are set by each virus, and are recorded in the computer 19 as a macro program. For example, a diameter of about 20 dispersed in the sample
Consider the case of measuring the number and diameter of spherical viruses of nm to 30 nm. The only information to be examined is the number and diameter of the virus.
The TEM image is captured by the electron beam detector 17, the captured image is binarized to extract a stained area, that is, a virus, and the diameter of the virus is measured using geometric feature analysis. First, the size of the analysis area is set according to this purpose. The number of pixels of the image used for virus inspection is 512 × 512
When measuring the diameter with an error of about 10%, the length of one side of the analysis area is appropriately about 1 μm so that the diameter of one virus is about 10 pixels. If the length of one side of the hole is 30 μm, one hole is divided into 30 × 30 areas, and if an overlapping area of about 30 nm is set between the areas in order to prevent counting, 31 × 31 areas are divided. When the area division is completed, a screen as shown in FIG.
The analysis area is shown.

Since the sample does not always exist in all the analysis areas, if there is no sample in the analysis area, moving to the next analysis area immediately shortens the inspection time. A function of judging the presence or absence of a sample in the analysis area using a histogram of image intensity in the area or a Fourier transform image is also provided. As described above, since the sample preparation method in which only the virus is stained deeply is used, it can be assumed that the image intensity is different between the region where the sample exists and the region where the sample does not exist. When a sample exists in the analysis area, the histogram of the image intensity has a plurality of peaks as shown in FIG. Fig. 13 (b)
As shown in (2), when the sample does not exist in the analysis area, the image intensity slightly varies due to the distribution of the irradiation electron current density and the like, but only one peak exists. Therefore, the presence or absence of a virus can be determined based on the number of peaks present in the image intensity histogram. In the determination using the Fourier transform image, the determination is made based on the ratio of high frequency components in the Fourier transform image. If no sample is present in the analysis area as shown in FIG. 17 (b), only the low-frequency component is present in the Fourier transform image. The ratio of the high frequency component in the image increases (FIG. 17A). When the ratio of the high frequency component to the low frequency component becomes equal to or more than a certain value, it can be determined that the sample exists in the analysis area.

In the case of a hole having a side of 30 μm, the diagonal distance is 42.
Since it is μm, if the sample holder is inclined by 1 °, a defocus of 0.74 μm occurs in the hole. The contrast of a TEM image is sensitive to defocus, and if there is a submicron defocus, a change in image contrast or image blur occurs. Therefore, virus inspection must always be performed on an image photographed with a constant focus. Before starting virus inspection, it is necessary to perform focus correction with submicron accuracy.

A focus analysis method using parallax is applied to the focus analysis in the focus correction. A first TEM image obtained by capturing an electron beam at a first angle substantially parallel to the optical axis, and a second TEM image captured by capturing an electron beam at a second angle inclined from the optical axis by an angle α. Is used. As shown in FIG. 4, if the focus is shifted, an image position shift occurs between the first TEM image and the second TEM image. D = M for defocus F and displacement D due to parallax
α (F + Csα ² ). The magnification M and the swing angle α are set by the operator. Since the spherical aberration coefficient Cs is fixed to the apparatus, the focus shift F can be specified if the positional shift D between the image pairs can be measured. Conventionally, a cross-correlation method or a least-squares method has been used as a parallax-based positional deviation analysis method. Did not. The present invention is characterized in that an analysis method based on a phase difference analysis of a Fourier transform image is applied to the analysis of the displacement D. As shown in FIG. 1, first and second TEs in which the angle of incidence of an electron beam on a sample is changed using an electron deflection coil 13 provided above an objective lens 14 are shown.
An M image is taken using the electron beam detector 17. The captured first and second TEM images are transmitted to a displacement analysis computing unit 20 based on a phase difference analysis of the Fourier transform image, and a displacement D as an analysis result is sent to a computer 19. The computer 19 calculates the defocus F from the displacement D, obtains an objective current Iobj necessary for setting a target focus, and uses the
To correct the focus.

FIG. 5 is an explanatory diagram of a displacement analysis method applied to the present invention. Image pair S1 (n, with displacement D = (dx, dy)
m) = S2 (n + dx, m + dy), and the two-dimensional discrete Fourier transform of S1 (n, m) and S2 (n, m) is S1 '(k, l), S2' (k , l). F {S (n + dx, m + dy)} = F {S (n, m)} exp (idxk + id
yl) formula, S1 '(k, l) = S2' (k, l) exp (idxk + i
dyl). That is, the difference between S1 ′ (k, l) and S2 ′ (k, l) is represented by a phase difference exp (idxk + idyl) = P ′ (k, l). P '
Since (k, l) is also a wave with a period of (dx, dy), the phase difference image
The image P (n, m) obtained by inverse Fourier transform of P '(k, l) is (dx, dy)
A δ-like peak occurs at the position. Since it can be assumed that only the δ-like peak exists in the image P (n, m), if the center of gravity of the δ-like peak intensity is calculated, even if the position of the δ-like peak includes a decimal point, the correct position can be obtained. Desired.

After normalizing the intensity of the entire image P (n, m), δ
When the typical peak intensity is calculated, the peak intensity is low when the noise component, that is, the common portion between the image pairs is large, and the peak intensity is high when the noise component, that is, the common portion is small. If this peak intensity is specified as a correlation value, the operator can identify the noise component ratio, that is, the reliability of the analysis result.
With the automatic correction device, there is no guarantee that correct analysis is always performed in all areas. Therefore, the lower limit of the correlation value is set, and if the calculated correlation value is equal to or smaller than the lower limit, the objective lens is not adjusted, and the correlation value is recorded together with the address of the analysis area. For example, when the position of the mesh was shifted due to a malfunction during the movement of the sample stage, it was captured at the end of the hole 23.
More than half of the TEM image becomes the mesh 22 and the common part of the image pair is reduced, so that a row of analysis areas that cannot be analyzed is formed. After completion of the automatic inspection, the operator can estimate from the distribution of the analysis area that cannot be analyzed that the mesh has entered the analysis area due to a malfunction of the sample stage and at which point the stage malfunction has occurred. Once the amount of displacement D has been analyzed, the focal point F is calculated using the relationship of D = Mα (F + Csα ² ), the current required to achieve the set optimal focus is obtained, and the objective lens current is adjusted. I do. After the objective lens correction, focus analysis is again performed by parallax, and the correlation value and the objective lens current in the displacement analysis are recorded together with the address of the analysis area, so that the inspection state can be recorded in more detail. The height distribution of the sample can be obtained from the objective lens current in the optimum focus. Also, by using the correlation value calculated with the same positional deviation D, it is possible to compare image quality such as sharpness.

After the end of the focus correction, a virus inspection is executed according to the flow shown in FIG. A new TEM image for inspection may be taken, but since the TEM image at the incident electron beam angle of 1 taken with Optimum Focus has already been recorded, using this for virus inspection will reduce the imaging time . In the virus test, first, the TEM image is binarized, connected components are obtained, and regions are labeled. Next, the area of each label area is calculated, and an area having a value equal to or less than a fixed area value is determined to be noise and eliminated. Next, the degree of circularity, moment, and the like of each label area are calculated, the area determined to be close to a perfect circle is recognized as a virus, and the diameter is calculated from the area. The number of viruses and the diameter of each virus are recorded together with the address of the analysis area as described above.

When the inspection is completed in one analysis area, the sample is moved using the sample stage 18, and the inspection in the next analysis area is started. The fine movement accuracy of the sample stage 18 is described by the positioning accuracy and the backlash. The movement accuracy in the fixed direction of the sample stage movement is the positioning accuracy, and the sliding distance in the direction change is the backlash. Current products have a positioning accuracy of about 1.2 nm and a backlash of about 0.02 μm. If the size of the analysis area is 30 μm, the sample movement can be performed on the sample stage 18.

However, when the sample stage 18 is moved, a sample drift due to the inertia of the sample stage 18 occurs even after receiving a stage stop signal. In the focus analysis using the parallax, when the position shift Ds due to the sample drift is mixed with the position shift D due to the parallax, the focus analysis accuracy is reduced. Therefore, at a second time different from the time at which the first TEM image was taken, the third TE taken at the first incident electron beam angle
Use the M image. The sample drift is calculated from the amount of displacement between the first TEM image and the third TEM image. This displacement analysis is also performed by a displacement analysis method based on the phase difference analysis of the Fourier transform image. Unless the position shift Ds due to the sample drift is analyzed with the same analysis accuracy as the position shift D due to parallax, the focus analysis accuracy will deteriorate. Also, the measurement of the sample drift needs to be performed in a short time, and the amount of displacement due to the sample drift is very small. The conventional displacement analysis method in which the analysis accuracy is limited by the size of one pixel is clearly insufficient in accuracy. First
By subtracting the position shift Ds due to the sample drift from the position shift amount in the second TEM image, the position shift D due to parallax can be obtained. Further, by executing automatic drift correction for operating the imaging system electron deflection coil 16 so as to cancel the displacement Ds due to the sample drift, blurring of the captured image due to the drift can also be removed.

The sample drift that may hinder the focus analysis may be caused by the time until the electron microscope is turned on, the temperature of the mirror body becomes unstable or the electron gun is stabilized, or immediately after the moving sample stage 18 is stopped. Is somewhat predictable. Since the inspection efficiency decreases when the number of captured images is increased, observation conditions for capturing the third TEM image for drift correction are specified in advance, and the first and second TEM images together with the first and second TEM images are designated under the specified observation conditions. Take a TEM image of No. 3 and remove the effect of drift. Drift is reduced, that is, the first TEM image and the third
After the amount of misalignment of the TEM image approaches 0, the first and second
With an algorithm that captures only the TEM, accurate focus correction can be performed with the minimum required number of TEM images.

If a third TEM image, which is an image for correcting the sample drift, is taken in every time the sample stage 18 is moved, the efficiency of the inspection will be deteriorated. The movement between the analysis areas is performed by the imaging system electron deflection coil 16. Since the correction of the sample drift due to the inertia of the stage movement is performed only during the movement between the holes, the number of the third TEM images to be taken is considerably reduced. In other cases, when the analysis area needs to be moved by the imaging system electron deflection coil 16, the analysis area is divided into small pieces. The movement between the areas is performed by the electron deflection coil 16 of the imaging system.

If the size of the hole is too large to be followed by the electron deflection coil 16 of the imaging system, the sample stage
18 is moved at a substantially constant speed, and the imaging system electron deflection coil 16 is moved.
There is also a method of performing image shift at substantially the same speed as the moving speed of the sample stage by using. FIG. 18 (c) shows the position of the observation visual field when the analysis area is moved in combination with the movement of the sample stage and the movement of the image shift.
The set position and the set position of the sample stage 18 indicate the elapse of time.
The time required for TEM image capturing is T _C , the time required for moving the visual field by the sample stage is T _S , and the time required for moving the visual field by the imaging system electron deflection coil 16 is T _I. In the visual field movement by the sample stage 18, there is an upper limit in speeding up due to the influence of backlash and inertia of the stage movement, and it cannot be faster than the visual field movement by the imaging system electron deflection coil 16. When the visual field movement is performed only with the sample stage 18, FIG.
As shown in (a), the inspection time becomes longer. On the other hand, the imaging system electron deflection coil 16 has a problem that the moving range is narrow. As shown in FIG. 18B, when the moving range of the imaging system electron deflection coil 16 is exceeded, it is necessary to move the sample on the sample stage 18. Therefore, as shown in FIG. 18C, if the sample stage 18 is moved at a substantially constant speed and the movement of the sample stage is offset by the image shift by the imaging system electron deflection coil 16, the sample stage 18 moves. Despite this, it is possible to take a still image of each analysis area. A wide field of view movement can be executed at high speed without being affected by backlash or inertia of the sample stage 18.

When the set position of the imaging electron deflection coil 16 at the time when the inspection of each analysis area starts is substantially constant, a wide range of analysis can be performed (see FIG. 18). The time T required for correction and inspection performed in each analysis area is calculated, and the moving speed of the sample stage 18 is set so that the movement of the sample stage 18 to the next analysis area is completed at that time. To offset the determined moving speed of the sample stage 18,
The image shift by the imaging system electron deflection coil 16 is controlled. In order to make the moving speed of the sample stage 18 and the moving speed of the imaging system electron deflection coil 16 coincide, the displacement analysis of the observation visual field is performed by the displacement analysis method based on the phase difference analysis of the Fourier transform image. As shown in FIG. 26, a first time and a second time are set during the inspection time T of each analysis area,
The first TEM image at the first time and the third TEM image at the second time are photographed using the electron beam detector 17. The captured first and second TEM images are transmitted to a displacement analysis computing unit 20 based on a phase difference analysis of the Fourier transform image, and a displacement D as an analysis result is sent to a computer 19. Calculator 19
Then, the moving speed of the observation visual field is calculated from the displacement D, and it is necessary for the moving speed of the observation visual field to become zero. Adjust and correct.

Since the position setting accuracy of the sample stage 18 becomes higher when the moving speed of the sample stage 18 is constant, the inspection time T of each analysis area is desired to be constant. If a third TEM image for analyzing the displacement of the analysis area is taken for each analysis area, the displacement correction accuracy and the focus analysis accuracy are improved,
Inspection efficiency deteriorates. Therefore, the adjustment of the observation visual field movement using the sample stage 18 and the imaging system electron deflection coil 16 is executed at the stage of the device adjustment before the virus inspection. Alternatively, an inappropriate analysis area is specified in advance for virus inspection, and no virus is performed in the analysis area, and setting is made to adjust the movement of the observation visual field. In the normal analysis area, the inspection is performed assuming that the observation visual field is almost stopped, and the inspection time is reduced.

The display item under examination is selected by the operator as needed. For example, display items shown in FIG. 15 are prepared. The image of the mesh 22 taken at the same time is displayed in the analysis area divided into analysis areas, and the analysis area that has been inspected, during inspection, and untested is displayed in different colors, and used for grasping the current inspection progress status and estimating the end time I do. Also provided are a table 94 for sequentially displaying inspection results in each analysis area, and a histogram 95 for displaying cumulative values of inspection results. A window for displaying the focus analysis result is also provided, and the correlation value of the image pair and the height of the sample calculated based on the focus analysis result are displayed. The reference point of the sample height is designated by selecting an appropriate position in the sample before or after the inspection and pressing the reset button 96. TE used for virus testing
The display of the M image is provided with a layer for displaying a circle 97 indicating the position and size of the specified virus. The operator observes these virus inspection results, focus correction results, and TEM images, and can stop the inspection if an abnormality is found on the way. In addition, since the items specified by the operator among the virus test results, focus correction results, and TEM images are recorded in the memory, after the test is completed, an analysis is expected based on information such as correlation values and sample heights. The inspection result of the area can be displayed to check the inspection state.

The analysis results after the inspection is finished
Use 22. The hole where the measurement is performed is divided into analysis areas, and by selecting a display item, the analysis result of each analysis area is displayed in monochrome or color by color. For example, when the number of viruses is selected as a display item, each analysis area is color-coded according to the number as shown in FIG. The taken TEM image of each analysis area is displayed by specifying the number of the analysis area, for example, by double-clicking the position of the analysis area. The display items specified by the operator among the items recorded in the memory are displayed on the screen. For example, together with the display of the TEM image, the virus test result, the sample height, and the correlation value in the analysis area are displayed (FIG. 16A).

The height distribution and correlation value of the sample can be used for grasping the inspection state and evaluating the reliability of the inspection result. Biological samples are usually sliced to a thickness of several tens of nanometers and can be assumed to be nearly flat. The change in the sample height is due to the warp or inclination of the mesh on which the sample is placed, and when the height distribution of the sample is plotted, it should be a substantially smooth curved surface. Therefore, it is presumed that an erroneous operation of the focus analysis has occurred in the analysis area where the sample height has been extremely changed, or that the sample thin film has been rolled up for some reason. In any case, it can be said that the reliability of the inspection result in the analysis area is poor. For example, FIG.
In the sample height distribution shown in (c), the sample height differs only in the region 25, and it is estimated that the reliability of the inspection result in this region is poor. In order to remove the inspection result in this area, the inspection result in the analysis area in which the sample height is out of the specified range may not be used. That is, the height distribution of the sample can be used as a filter for the inspection result. In addition, the filter can be set based on the curvature obtained from the height distribution, instead of the filter based on the height of the sample. It is also assumed that the correlation value distribution shown in FIG. The correlation value can be used for evaluating the sharpness of a TEM image. For a biological sample, if the sample is prepared, for example, if the sample is thick, only a blurred image can be obtained even when observed with Optimum Focus. When the image is blurred, the correlation value decreases,
Since the error at the time of binarization increases, the measurement accuracy of the virus diameter decreases. Similar to the sample height distribution, the correlation value distribution can be used as a filter so that the analysis result in the region 26 where the correlation value is low can be omitted. Further, a measurement error of the virus diameter can be estimated from the correlation value, and the measurement error can be used as a weight function when creating a virus diameter distribution map.

Embodiment 3 FIG. 19 is a basic configuration diagram of a transmission electron microscope used in an embodiment of the present invention. Electron gun 11 and its control circuit 11 ', irradiation lens 12 and its control circuit 12', irradiation system electron deflection coil 13 and its control circuit 13 ', objective lens 14 and its control circuit 14', projection lens 15 and its control circuit 15 ', imaging system electron deflection coil 16 and its control circuit 16', electron beam detector
17 and its control circuit 17 ', the sample stage 18 and its control circuit 18', and a computer 19 equipped with control software and image processing software. Each control circuit receives a control command sent from the control software of the computer 19, and sends a return value to the computer when the control is completed. The electron beam detector 17 is an electron beam detector 17 composed of many pixels, such as a CCD camera,
The obtained image signal is transmitted at high speed to the recording device of the computer 19 or to the arithmetic unit 20 for analyzing the displacement based on the phase analysis of the Fourier transform image via an image transmission cable. The computer 19 is connected to an arithmetic unit 20 for analyzing the displacement based on the phase analysis of the Fourier transform image.

FIG. 3 shows a flowchart of TEM image photographing. First, an acceleration voltage is applied to the electron beam generated by the electron gun 11 and applied to the electron beam.
Adjustment is performed using the irradiation system electron beam deflection coil 13 so that the electron beam passes on the optical axis, and it is confirmed that the electron beam reaches the electron beam detector 17. Next, after adjusting the irradiation system lens 12, the sample 21 is inserted, and after confirming the TEM image of the sample 21 at a low magnification, an objective aperture is inserted into the optical axis in order to increase the TEM image contrast. The observation field of view is selected while increasing the magnification of the projection lens 15, the focus is corrected, and a necessary TEM image is captured.

A focus analysis method using parallax is applied to the focus analysis in the focus correction. A first TEM image obtained by capturing an electron beam at a first angle substantially parallel to the optical axis, and a second TEM image captured by capturing an electron beam at a second angle inclined from the optical axis by an angle α. Is used. The function of intentionally changing the irradiation angle of the electron beam on the sample using the irradiation system electron deflection coil 13 shown in FIG. 19 is called a wobbler, and by using this function, the defocus can be converted into parallax. Therefore, the operating principle of the wobbler and the mechanism of generating parallax will be described first with reference to FIG. FIG. 24A shows an electron optical diagram in the case where the sample is at the focus position (F = 0) and the electron beam is incident parallel to the optical axis (α = 0). In the figure, the electron beam is incident on the sample indicated by the arrow from above the paper. In the sample, a part of the electron beam is diffracted. For example, in the case of a crystalline sample, the electron beam is scattered in a specific direction that satisfies the Bragg condition as shown in the figure, and the rest is transmitted without changing the direction. The objective lens below the sample has the same properties as a normal optical convex lens, and has the function of converging an electron beam. Therefore, a so-called diffracted image plane (back focal plane) in which electrons in the same scattering direction converge at one point directly below the lens is formed. Next, a TEM image plane is formed in which electrons scattered and transmitted at the same point are converged at one point. At this time, the sample is magnified M times on the TEM image plane according to the projection magnification M of the lens. In the case of F = 0 and α = 0, the arrow image on the TEM image plane has no displacement from the optical axis as shown in FIG. 24A (D = 0).
On the other hand, although the sample is in the correct focus position (F = 0), when the electron beam is obliquely incident at an angle α by the wobbler function, FIG.
Electron beam as for receiving the converging action at a position deviated from the central axis of the objective lens, the influence of the optical lens similar convex specific spherical aberration, the field displacement D = CsMα ³ occurs. Here, Cs is a spherical aberration coefficient which is an eigenvalue of the lens. Finally, when the sample is not at the focus position and the electron beam is obliquely incident at an angle α by the wobbler function, the positional deviation further increases as shown in FIG. When the defocus amount is F,
Since the sample position is shifted by αF in the horizontal direction with respect to the optical axis, the TEM
On the image plane, the image is magnified by the lens magnification M, and MαF parallax occurs. Accordingly, the disparity is an amount represented by D = Mα (F + Csα ² ), together with the shift amount due to spherical aberration. As is clear from this equation, even when the sample is not at the focus position, α = 0
Then, the parallax D is zero. Therefore, by photographing two types of image pairs having different α using the wobbler function, the defocus F can be specified from the positional deviation amount D of the image pairs. Note that the parallax due to aberration (CsMα ³ ) is usually smaller than the parallax (MαF) caused by defocus by one digit or more. There may be considered to be completed if the CsMα ³ below.

The displacement D of the image pair is obtained by an analysis method using the phase component of Fourier transform. An explanatory diagram of this method is shown in FIG. Image pair S1 (n, with displacement D = (dx, dy)
m) = S2 (n + dx, m + dy), and the two-dimensional discrete Fourier transform of S1 (n, m) and S2 (n, m) is S1 '(k, l), S2' (k , l). F {S (n + dx, m + dy)} = F {S (n, m)} exp (idxk + id
yl) formula, S1 '(k, l) = S2' (k, l) exp (idxk + i
dyl). That is, the displacement between S1 ′ (k, l) and S2 ′ (k, l) is represented by a phase difference exp (idxk + idyl) = P ′ (k, l).
Since P ′ (k, l) is also a wave having a period of (dx, dy), the image P (n, m) obtained by performing an inverse Fourier transform on the phase difference image P ′ (k, l) has (dx, d)
A δ-like peak occurs at the position of y). The image P (n, m) has δ
Since it can be assumed that there is only a peak, the position of the δ peak can be correctly obtained by calculating the center of gravity of the δ peak intensity even if the position of the δ peak includes a decimal point.

After normalizing the intensity of the entire image P (n, m), δ
When the typical peak intensity is calculated, the peak intensity is low when the noise component, that is, the common portion between the image pairs is large, and the peak intensity is high when the noise component, that is, the common portion is small. If this peak intensity is specified as a correlation value, the degree of coincidence between image pairs can be evaluated.

Using the apparatus shown in FIG. 25, focus correction is executed according to the flowchart shown in FIG. First, a field of view on which focus analysis is performed by the sample fine movement mechanism provided on the sample stage 18 is selected. This selection also includes settings such as the observation magnification and the objective aperture diameter. Next, the setting of the optimum focus, the correlation value lower limit, the swing angle α, and the number of corrections is performed using the monitor screen shown in FIG. After completing the parameter setting, an image pair is photographed using the electron beam detector 17. After the electron beam detector 17 receives the signal instructing the first TEM image capture, the image capture is started, and the irradiation system electron deflection lens control circuit 13 receives the signal indicating that the image capture is completed. Thereafter, the angle of the incident electron beam is changed to the second angle, and after the electron beam detector 17 receives a signal indicating that the change has been completed,
Take in the second image. An analysis image P (n, m) is calculated from the captured image pair, and a peak corresponding to the displacement is specified. When the peak corresponding to the displacement is identified, the displacement D is obtained from the peak, and the calculated D value is transferred to the computer 19 equipped with the control software and the image processing software.
Here, the focus F is calculated using the relationship of D = Mα (F + Csα ² ), the objective current value Iobj to be corrected corresponding to the focus F is calculated, and this value is transferred to the objective lens control circuit 14 ′. Then, the objective lens current is adjusted.

Here, an embodiment of a defect inspection of a virus or a semiconductor memory by an electron microscope using the above focus correction will be described. An electron microscope has an atomic-level resolution and can obtain various contrasts due to the structure of a sample. Therefore, observation of a variety of target samples, whether living or non-living, has been performed. Under these circumstances, for viruses such as AIDS and influenza that cannot be evaluated due to their small size with an optical microscope, it is necessary to quickly determine the presence or absence of infection in a large number of patients. Conventionally, humans insert a sample into a manually operated electron microscope and visually evaluate it in response to such requirements. A similar example is
This is a defect inspection in a semiconductor memory. Extract as appropriate,
The sample processed into an observable shape is set on an electron microscope and observed. However, with the recent increase in the degree of integration, the observation field of view has increased dramatically, and it has become a limit for humans to find defects manually. In addition, many specimens are not flat, and specimens are not always placed on a plane perpendicular to the electron beam. In each case, focus correction is required, and it is extremely important to improve observation throughput by automatic control of an inspection process. Therefore, an example of virus inspection will be described first with reference to FIG. 20 by utilizing the automatic focus correction function of the present application. A position shift D is calculated from the two captured images as in the first embodiment, and then a focus shift F and an objective current Iobj corresponding thereto are calculated. Correction is immediately applied to the objective lens 14 based on these values, and an image is captured again. In the image photographing, the fine movement of the sample and the focus correction may be repeated several times, and the image may be photographed again for inspection after the target visual field is transferred to the image. After that, a comparison is made with the registered image of the virus to be extracted in advance. Here, as in the case of analyzing the positional deviation D, the degree of shape coincidence is evaluated by image processing based on the phase difference analysis between the two Fourier transform images, and a correlation value is obtained. Is detected, the x and y coordinates of the sample stage 18 where the virus is found are registered, and the sample number is registered.
If no virus is found in the observation visual field, the visual field is changed. At this time, the field of view may be changed by operating the x, y, z fine movement mechanism in the sample stage 18 or by moving the electron beam position by the imaging system electron deflection coil 16. Further, the electron beam detector 17 may be moved by providing a fine movement function at a portion where the electron beam detector 17 is attached to the electron microscope. As described above, the change of the sample position and the drift correction can be properly used depending on the case without changing the relative position between the irradiation position of the electron beam transmitted through the sample and the electron beam detector. There are also a plurality of methods for focus correction, and in the above-described embodiment, focus correction was performed by changing the objective current value and changing the focal length.
As a result of detecting the displacement D, the focus can also be corrected by using the sample stage 18 and finely moving the sample in the direction of the electron beam incident axis at the position of the sample, for example, at the focus position. This is Figure 20
This is as shown in the flow of moving the sample stage z after calculating the middle defocus F. In the case of a sample drift, the sample stage 18 may be moved in a plane perpendicular to the electron beam incident direction, or the installation position of the electron beam detector 17 may be finely moved, in response to the displacement D.

Next, a semiconductor evaluation example will be described with reference to FIG. An image (a so-called planar image) observed from above a typical memory cell transferred from the electron beam detector 17 is as shown in the lower part of the figure. In many cases, the semiconductor pattern usually has such a pattern of a fixed shape arranged regularly.
The contrast caused by defective defects or foreign matter is mixed into a very small part of the inside. Also in FIG. 21, linear defects and round foreign matters are observed around the pattern. First, the focus is corrected by the method already described, and then compared with the registered pattern. Here, an example of the comparison method will be described with reference to FIG. Using the fact that patterns to be inspected are regularly arranged, the field size at the pattern interval is trimmed and cut out. Therefore, it is appropriate that the registered images have the same size. Here, the degree of coincidence of the virus-like shape is evaluated, and if the correlation value exceeds the set lower limit,
Register the corresponding memory address. Next, the trimming position is changed, and the similar shape matching degree is evaluated. When the inspection of the entire surface of the captured image is completed, the visual field is changed by the sample stage 18 and the imaging system electron deflection coil 16 and the focus is corrected again, and then the same inspection is performed. In the above description, a plurality of memory cell patterns were initially included in the image captured by the electron beam detector. Sometimes it is necessary. At this time, the magnification of the electron microscope may be increased, an image of one memory cell may be taken from the beginning, and a one-to-one comparison with the registered image may be performed without trimming. In FIG. 22, the trimming position moves from the left to the right of the sample, but there can be various inspection orders as shown in FIG. This should be set in accordance with the fine movement performance of the sample stage and the deflection accuracy of the deflection coil.

Further, the examples in this specification are based on a transmission electron microscope (T
An example using EM was described, but a scanning electron microscope (SE
M), scanning transmission electron microscope (STEM), ion microscope (SIM), etc., can be widely applied to image observation devices using charged particle beams such as electrons and ions.

Embodiment 4 In an apparatus for observing or inspecting a sample by continuously moving the sample stage, when the sample stage is at a high speed of 5 m / S or more (check required), a predetermined error occurs due to an error due to vibration and the accuracy of the speed unevenness rail. It becomes much more difficult to move at speed. In such a case, as in the invention of the present application, the first charged particle beam itself becomes a probe, and a target position is determined from a plurality of images obtained by irradiating the probe with the sample and detecting the second charged particle beam from the sample. It is possible to solve the problem by calculating an error from the above by the phase only method and feeding it back to the deflector that deflects the sample stage or the probe until the next image of the sample to be inspected is obtained. This makes it possible to reduce erroneous determinations in the inspection of a continuously moving sample. Specifically, a first charged particle beam as a probe is converged, a predetermined region of the sample is scanned through a deflector and an objective lens, a second charged particle beam from the sample is detected by a detector, and an analog signal is detected. After that, the data is converted into a digital signal and stored in the storage means. The storage start point is always fixed and is operated by a signal from a time management or stage or a mark on the sample. After a predetermined time has elapsed after the first image has been captured, the second image is captured. The first and second images are Fourier-transformed to determine the phase difference and inverse Fourier-transformed to determine the deviation from the origin position from the address amount of the storage means and to return to the control unit or the deflector of the sample stage. It is possible to reduce erroneous determination at the time of comparing the first image and the second image due to a malfunction at the time of moving.

[0066]

The accuracy of the analysis of the defocus F is proportional to the accuracy of the analysis of the position D. In the displacement analysis method used in the conventional focus correction system, the analysis accuracy is not, in principle, less than the size of one pixel of the electron beam detector 17, but the analysis accuracy of less than the pixel size is reduced by adopting this analysis method. As a result, focus correction can be performed with the same precision as a skilled operator. In addition, if the performance of the apparatus is improved by reducing the image used for the analysis for the displacement analysis in order to improve the focus analysis accuracy, the analysis time and the equipment cost will increase. According to the present invention for improving analysis accuracy, focus analysis accuracy can be improved while maintaining analysis time and apparatus cost.

Further, since the degree of coincidence between image pairs is specified as a correlation value, the operator can confirm the reliability of the output analysis result. If a lower limit of the correlation value is set, and if the calculated correlation value is equal to or less than the lower limit, lens adjustment is not performed, malfunction can be prevented. Further, in the automatic inspection apparatus, if the correlation value and the focus analysis result in the focus analysis are recorded, it is possible to verify later whether the automatic correction is normally performed, and therefore, the automatic inspection apparatus can be operated unattended.

Further, since the displacement analysis method used in the present invention uses a phase component of an image, it is hardly affected by a change in the background, and even if a shadow of an aperture is mixed, a sufficient common part for an image pair is used. If there is, it can be analyzed. TE
Since operation is possible even if the M adjustment is somewhat inadequate, it is possible to use an operator who is unfamiliar with TEM operation.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram showing an automatic focus correction process using parallax.

FIG. 2 is a schematic diagram of a parameter setting and analysis result display screen in focus correction.

FIG. 3 is a flowchart illustrating a process of photographing a TEM image.

FIG. 4 is a diagram illustrating the principle of a focus analysis method using parallax.

FIG. 5 is an explanatory diagram showing a calculation process of a displacement analysis.

FIG. 6 is a basic configuration diagram of a TEM electron beam detector 17;

7A and 7B are explanatory diagrams showing peak positions and intensities in an analysis image, wherein FIG. 7A shows a case where the contrast of the sample structure is high, FIG. 7B shows a case where the contrast of the sample structure is low, and FIG. Shows a case where the positional deviation is small.

FIG. 8 is a flowchart showing a process of specifying a peak corresponding to a position shift from an analysis image, wherein (a) is a process using an origin mask, and (b) is a process for outputting two peaks.

FIG. 9 is a flowchart illustrating a focus correction process.

FIG. 10 is a flowchart showing an automatic inspection process using a TEM.

11A and 11B are explanatory diagrams showing a process of analyzing the direction and shape of the mesh 22 and designating an analysis area, wherein (a) a TEM image of the mesh 22 taken at a low magnification, (b) binarization, and labeling FIG. 9C is a diagram showing the attached image, (c) a diagram showing the positional relationship of the center of gravity 24 of the hole 23 and the direction of the mesh 22, and (d) a diagram showing a state where the designated hole 23 is divided into analysis areas.

FIG. 12 is a flowchart showing a process of analyzing the direction and shape of a mesh.

13A and 13B are explanatory diagrams showing a method for determining the presence or absence of a sample in a TEM image, wherein FIG. 13A shows a TEM image when a sample is present, and FIG. It is.

FIG. 14 is a flowchart showing a virus inspection process in an analysis area.

FIG. 15 is a schematic view of a screen used for setting parameters and displaying the progress of the inspection in the automatic inspection.

FIG. 16 is a schematic diagram of a screen displaying a result of the automatic inspection.

17A and 17B are explanatory diagrams showing a method of determining the presence or absence of a sample in a TEM image. FIG. FIG. 4 is an explanatory diagram illustrating a high-frequency component ratio in a converted image.

18A and 18B are observation fields when the analysis area is moved by (a) sample movement by the sample stage 18, (b) image shift by the imaging system electron deflection coil 16, and (c) sample movement and image shift. FIG. 4 is an explanatory diagram showing the elapsed time of the position of the image, the setting position of the image shift, and the setting position of the sample.

FIG. 19 is a schematic diagram of an electron microscope used in the present invention.

FIG. 20 is an explanatory view showing an inspection process of a virus inspection using a TEM.

FIG. 21 is an explanatory view showing an evaluation step of semiconductor evaluation using a TEM.

FIG. 22 is an explanatory view showing a step of trimming a pattern to be inspected from a TEM image and comparing the patterns.

FIG. 23 is an explanatory diagram showing an inspection order when changing the inspection visual field by the sample stage 18 and the imaging system deflection coil 16;

24A and 24B are explanatory diagrams of the principle of a focus analysis method using parallax. FIG. 24A shows a case where a sample at a positive focus position is irradiated with an incident electron beam in parallel, and FIG. (B) Electron optics diagram when obliquely irradiating an incident electron beam to a sample located at a position deviating from the normal focus.

FIG. 25 is an explanatory diagram showing an automatic focus correction process using parallax.

FIG. 26 is an explanatory view showing a step of automatically correcting the displacement of the sample by the imaging system electron deflection coil 16;

[Explanation of symbols]

11 ... electron gun, 11 '... electron gun control circuit, 12 ... irradiation lens,
12 '... irradiation lens control circuit, 13 ... irradiation system electron deflection coil, 13' ... irradiation system electron deflection coil control circuit, 14 ... objective lens, 14 '... objective lens control circuit, 15 ... projection lens, 1
5 ': Projection lens control circuit, 16: Imaging electron deflection coil, 16': Imaging electron deflection coil control circuit, 17: Electron beam detector, 17 ': Electron beam detector control circuit, 18: Sample stage , 81 ': Sample stage control circuit, 19: Computer equipped with control software and image processing software, 20: Calculator for displacement analysis based on phase difference analysis of Fourier transform image, 21: Thinned sample, 22: Mesh , 23 ... Hole, 24 ... Hole's center of gravity, 25 ... Area where the sample height is out of the specified range, 26 ... Area where the correlation value is below a certain value, 31 ... First peak corresponding to displacement, 32 ... Detector fixed 2nd peak by pattern, 33: peak of maximum intensity before application of origin mask, 34: peak of intensity after application of origin mask, 35: noise component, 71: scintillator, 72: coupling portion, 73: CCD camera, 91 … Continuous focus correction execution button, 92… First of automatic focus correction parameters Minimize button, 93 ... focus correction execution button, 94 ... inspection results table, 95 ...
Test result histogram, 96 ... sample height reset button, 97
... A circle indicating the position and size of the detected virus.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Isao Nagaoki, Inventor 882 Ma, Hitachinaka City, Ibaraki Prefecture Within the Hitachi Measuring Instruments Group, Inc. (72) Inventor Hiroyuki Kobayashi 882 Ma, Hitachinaka City, Ibaraki Prefecture Hitachi, Ltd. F term in the Measuring Instruments Group of Manufacturing Works (Reference) 5C033 EE03 EE06 LL01 LL02

Claims (21)

[Claims] An electron gun, a lens for converging a first electron beam from the electron gun, a deflector for deflecting the first electron beam, and irradiating the sample with the first electron beam. In an electron microscope including a detector for detecting the second electron beam image of the above, and a sample stage for holding the sample, the angle of the electron beam incident on the sample is changed to the first incident angle and the second incident angle. Means for setting, means for recording a first electron microscope image at a first incident angle and a second electron microscope image at a second incident angle, and an image for image processing of the first and second electron microscope images Processing means; means for obtaining a correlation value between the first and second images from the image processing means; means for determining that the correlation value is within a predetermined range; and a result based on the result of the determination means. A first electron from a peak generated in the analysis image of the first and second images; Means and, electron microscope, characterized by comprising means for setting a focal position of the lens with respect to the sample obtained from the positional deviation on a predetermined focal position to analyze the positional deviation of the microscope image and the second microscope image. The means for setting the first incident angle and the second incident angle has a record of a change in the angle of the electron beam caused by passing through the electron lens. 2. The electron microscope according to claim 1, further comprising means for adjusting an angle before passing through the electron lens with reference to the record. 3. The means for setting the first angle of incidence and the second angle of incidence, wherein the angle of incidence of the electron beam is fixed at the first angle of incidence during the recording of the first electron microscope image. When the signal indicating that the recording of the first electron microscope image is completed is made, the incident electron beam is changed to the second angle, and when the signal indicating that the change is completed is received, the recording of the second electron microscope image is performed. 2. The electron microscope according to claim 1, further comprising means for fixing the incident angle of the electron beam to the second incident angle until the operation is completed. 4. The means for analyzing the positional deviation displays the peak intensity calculated after normalizing the intensity of the analysis image as an index indicating the degree of coincidence between the first electron microscope image and the second electron microscope image. 2. The electron microscope according to claim 1, further comprising means for recording. 5. The apparatus according to claim 1, wherein the means for analyzing the positional deviation has means for designating a lower limit value of the intensity of the peak, and does not calculate the position of the peak if the peak intensity is less than the specified lower limit value. The electron microscope according to claim 1. 6. The means for analyzing the displacement includes: a first electron microscope image and a second electron microscope image, a first contrast reflecting a sample structure and a second contrast reflecting a fixed pattern of an electron beam detector. And means for determining a first peak from the analysis image including a first peak due to a first contrast displacement and a second peak due to a second contrast displacement. The electron microscope according to claim 1. 7. The means for specifying the position of the first peak utilizes a fact that the position of the second peak is known, and replaces the intensity of the occurrence position with zero or another constant value. The electron microscope according to claim 7, comprising: 8. The means for specifying the position of the first peak specifies two peaks from the analysis image, and utilizes the fact that the position of the second peak is known. 8. The electron microscope according to claim 7, further comprising means for specifying a peak generated at a position other than the position as a first peak. 9. The means for setting the focal position refers to a record of the relationship between the current value of the electron lens and the focal position at each magnification of the electron microscope, and designates the focal position for the sample from the analyzed focal position. 2. A device according to claim 1, further comprising means for setting a current value required to change the focal position to a different focal position.
Electron microscope as described. 10. An electron microscope equipped with a lens and its control device, a deflector and its control device, a detector and its control device, a sample stage and its control device, wherein the angle of the electron beam incident on the sample is determined. Means for setting a first angle of incidence and a second angle of incidence; and a first angle of incidence at the first angle of incidence.
Means for recording the electron microscope image and the second electron microscope image at the second incident angle, and means for analyzing the displacement between the first electron microscope image and the second electron microscope image with an accuracy of less than one pixel. Means for displaying or recording the focus position of the electron lens with respect to the sample position and the reliability of the analysis result from the displacement, and means for setting the focus position of the electron lens with respect to the sample to the designated focus position. Electron microscope. 11. An electron source, a lens for converging a primary electron beam from the electron source, a deflector for deflecting the electron beam, and irradiating the sample with the primary electron beam to detect a secondary electron beam from the sample. Means for setting the angle of an electron beam incident on a sample to a first angle of incidence and a second angle of incidence in an electron microscope equipped with a sample stage, and a first electron beam at the first angle of incidence. Means for recording a microscope image and a second electron microscope image at a second angle of incidence; and converting a real image of the first and second electron microscope images from a real space to a frequency space into a composite image of a converted image from the real space to the frequency space. Means for analyzing the position shift between the first electron microscope image and the second electron microscope image from the peak generated in the analysis image converted to the real space or converted from the frequency space to the real space; Focus position of electronic lens And means for displaying or recording the reliability of the analysis result and means for setting the focal position of the electron lens with respect to the sample to the designated focal position, and having means for giving an instruction to repeatedly execute focus correction. Characteristic electron microscope. 12. A detector for focusing a first electron beam using a lens, deflecting the focused electron beam, irradiating the sample with a beam, and detecting a second electron beam transmitted from the sample, and holding the sample. Means for recording a first electron microscope image taken from a first time and a third electron microscope image taken from a second time in an electron microscope having a sample stage; and first and third electron microscopes Means for analyzing a positional shift between the first electron microscope image and the third electron microscope image from a peak generated in an analysis image obtained by applying an orthogonal transformation or a two-dimensional discrete inverse Fourier transform to a composite image of the orthogonal transformation image; An electron microscope comprising means for displaying or recording the sample moving speed analyzed from the positional deviation and the reliability of the analysis result, and means for canceling the sample movement. 13. The electron microscope according to claim 12, wherein the means for canceling the movement of the sample is a means for moving the position of the sample taken in the electron beam detector by an electron deflection coil. 14. The electron microscope according to claim 12, wherein the means for canceling the movement of the sample is a means for moving the position of the sample with respect to the electron lens by a sample stage. 15. An electron source, a lens for focusing an electron beam from the electron source, camera means for irradiating the sample with the electron beam focused by the lens, and detecting a transmitted electron image from the sample. In an electron microscope having a deflector for deflecting an electronic image and a sample stage, a means for moving a sample position with respect to the lens by the sample stage, and a sample position for capturing the transmitted electron image into the camera means by a deflector. A first electron microscope image taken from a first time and a third electron microscope image taken from a second time
Means for recording an electron microscope image of the first electron microscope image, and a first electron microscope image from a peak generated in an analysis image obtained by performing a Fourier transform or an inverse Fourier transform on a composite image of the Fourier transform images of the first and third electron microscope images. Means for analyzing the displacement of the third electron microscope image and adjustment using a deflector so that the sample position taken into the camera means does not change even if the sample position in the lens is moved by the sample stage. An electron microscope having means. 16. A charged particle source, lens means and deflection coil means for controlling a first charged particle beam from the charged particle source, a sample stage for holding a sample, and control means for controlling the sample stage. A charged particle beam apparatus comprising a detector for detecting a second charged particle beam image generated by irradiating a sample with the first charged particle beam, wherein a plurality of images are obtained by image signals from the detector. Storage means for performing a Fourier transform on the plurality of images, calculating means for calculating a phase difference between the images and performing an inverse Fourier transform or an inverse Fourier transform, and the charged particle beam captured by the detector A charged particle beam device, wherein the image is returned to any one of the deflection coil unit, the control unit, and the detection unit that controls a position of an image in a sample. 17. An electron beam device, camera means disposed in the electron beam device, and image processing means connected to the camera means, wherein the sample is irradiated with a first charged particle beam,
Sending a first image acquisition signal from the second charged particle beam from the sample to the image processing means; receiving a first acquisition completion signal from the image processing means; Transmitting the image acquisition signal of the above, and the correlation value and the displacement amount of the first and second images are output from the image processing means, and it is determined whether or not to output a correction signal for correcting the displacement. A recording medium incorporating a step of determining from a correlation value and a program for outputting a correction signal to the electron beam device based on the determining step. 18. A detection device, comprising: a sample stage for holding a sample; and control means for moving the sample stage, irradiating the sample with a first charged particle beam and detecting a second charged particle beam from the sample. Means for forming an image based on a signal from the detecting means, and a deflecting means which is controlled so as to cancel the visual field movement caused by the stage movement. 19. A sample stage for holding a sample, and control means for moving the sample stage, irradiating the sample with a first charged particle beam, and detecting a second charged particle beam image transmitted through the sample. An electron beam apparatus, comprising: a detecting means for controlling the movement of the stage due to the movement of the stage. 20. A charged particle source, lens means for controlling a first charged particle beam from the charged particle source, a sample stage for holding a sample, and irradiation of the sample by the first charged particle beam In the charged particle beam apparatus comprising a detector for detecting the second charged particle beam image generated by the detector and display means for displaying the second charged particle image from the detector, the sample stage is continuously moved. Control means for irradiating the first sample on the sample stage with the first charged particle beam to form a second charged particle image which is out of focus to a second charged particle image of the second sample. A charged particle beam apparatus characterized in that a focused second charged particle image is obtained until it is obtained. 21. A step of setting a sample on a sample stage;
Moving the sample stage; controlling the deflector so that the movement of the first electron beam is offset relative to the moving sample; and capturing an image of the second electron beam from the sample A step of obtaining and storing a plurality of the captured images; a step of obtaining a correlation between the images by image processing from the plurality of images; and a step of obtaining a shift amount; and the sample stage or the Returning to the deflector.