CN111020493A

CN111020493A - Based on C60NO of/CuPc heterojunction2Preparation method of gas sensor

Info

Publication number: CN111020493A
Application number: CN202010012139.3A
Authority: CN
Inventors: 王丽娟; 曾玲君; 谢强; 孙强; 朱阳阳
Original assignee: Changchun University of Technology
Current assignee: Changchun University of Technology
Priority date: 2020-01-07
Filing date: 2020-01-07
Publication date: 2020-04-17

Abstract

The invention is based on C₆₀NO of/CuPc heterojunction₂Method for preparing gas sensor covered with silicon dioxide (SiO)₂) Vacuum co-evaporation of C on silicon (Si) substrate of insulating layer₆₀Forming a molecular heterojunction with the CuPc film, and vacuum evaporating MoO₂The material is used as an electrode modification layer,and reducing the contact potential barrier between the electrode and the sensitive layer, and forming the molecular heterojunction film gas sensor by vacuum evaporation of the gold-plated metal interdigital electrode. On the one hand, the co-evaporation causes more molecular gaps, and increases NO₂The contact area of the gas and the sensitive material; on the other hand, due to the molecular heterojunction effect, the gas sensitivity is improved, and the carrier concentration is increased, so that the response strength and the sensing performance of the gas sensor are improved.

Description

Based on C60NO of/CuPc heterojunction2Preparation method of gas sensor

Technical Field

The inventionInvolving based on C₆₀NO of/CuPc heterojunction₂A preparation method of a gas sensor belongs to the field of organic gas sensors.

Background

Gas sensors are widely used in the fields of atmospheric monitoring, disease diagnosis, biomedicine, food spoilage detection, and the like, and are particularly used for selectively detecting nitrogen dioxide (NO)₂) Equal toxic and harmful environmental gases, NO₂The organic film gas sensor has the advantages of high precision, good selectivity, high sensitivity, high reliability, small environmental interference factor and the like, and along with the continuous progress of social science and technology, the performance of the gas sensor can be gradually improved, and the application of the organic film gas sensor can be more widely used as a sensor which is dominant in the market.

At present, in order to improve the stability and sensitivity of the gas detection sensor, researchers try various structures and materials to study the influence of a heterogeneous layer structure on the performance of the sensor, and the study shows that the heterojunction formed on the basis of an organic semiconductor film can increase the density of carriers of an interface so as to improve the performance of the sensor.

The invention adopts a vacuum co-evaporation method to prepare C₆₀the/CuPc co-evaporated film (20 nm) is used as a sensitive layer of the gas sensor. CuPc is a thermally gated organic semiconductor material for gas detection, for NO₂Gas has better responsiveness, C₆₀Is an organic semiconductor material with a spherical structure, is deposited between two organic materials on a substrate simultaneously, not only provides a large heterogeneous interface area, but also is an interpenetrating nano-network for charge carrier transmission, and is favorable for improving NO₂Performance of the gas sensor.

Disclosure of Invention

The invention aims to prepare bimolecular heterojunction NO with good stability and high sensitivity by using a simple method₂Gas sensor and based on C₆₀NO of/CuPc molecular heterojunction₂The gas sensor has the characteristics of wide material source, low cost, simplicity, easiness in manufacturing, high sensitivity and the like.

The invention adopts vacuum deposition co-evaporation C₆₀The schematic diagram of the three-dimensional structure of the gas sensor prepared by the/CuPc film is shown in figure 1, and the gas sensor is covered by SiO₂C is deposited on the n-type highly doped Si substrate (1) of the insulating layer (2) by a co-evaporation method₆₀a/CuPc bilayer film (3) deposited under vacuum of 6.0X 10^-4Pa, vapor deposition speed of 0.1 nm/min, substrate temperature of 180 deg.C₆₀The thickness of the/CuPc bilayer film is 20 nm. Then adopting a mask shielding method to evaporate MoO₂(4) The material is used as an electrode modification layer, the thickness is 3 nm, and the energy barrier between the electrode and the organic semiconductor layer is reduced. Finally at 6X 10^-4Vacuum depositing gold interdigital electrode (5) under Pa vacuum degree, the thickness is about 50 nm, the length and the width of the channel are respectively 10 mm and 0.5 mm, and a bimolecular heterojunction NO is formed₂A gas sensor.

Drawings

FIG. 1: based on C₆₀NO of/CuPc molecular heterojunction₂A schematic three-dimensional structure of the gas sensor;

FIG. 2: NO of gas sensor₂A gas molecule sensing process schematic;

FIG. 3: c₆₀Schematic diagram of/CuPc molecular heterojunction co-evaporation process.

Detailed Description

The invention is based on C₆₀NO of/CuPc heterojunction₂The gas sensor manufacturing method, as shown in fig. 2 and 3, is implemented as follows:

1. will be covered with SiO 300 + -10 nm thick₂The n-type highly doped Si substrate (1) of the insulating layer (2) is washed and wiped by acetone, ethanol and deionized water in sequence, then residual liquid is blown out by nitrogen, and then the substrate is placed into a drying oven for drying treatment.

2. Under vacuum of 6X 10^-4At Pa, in Si/SiO₂Simultaneous deposition by evaporation of C on a substrate (10) at a deposition rate of 0.1 nm/min₆₀(6) And CuPc (7) material to form C₆₀the/CuPc bilayer film (3) is used as a sensitive layer, the substrate temperature is 180 ℃, the total thickness is 20 nm, and the deposition rate and the film thickness are monitored by a crystal diaphragm thickness controller (9).

3. A mask having a width of 10 mm and a length of 0.5 mm was placed on the sample under a vacuum of 6X 10^-4At Pa, MoO is evaporated₂(4) A material.

4. Evaporation of the electrode: the electrode material is gold wire with low contact resistance. Under vacuum degree of 6X 10^-4And (5) under the Pa condition, evaporating and plating the gold interdigital electrode (5) with the thickness of 50 nm. The width and length of the interdigital electrode channel are 10 mm and 0.5 mm.

Claims

1. This patent describes a C-based₆₀NO of/CuPc heterojunction₂The preparation method of the gas sensor comprises the following steps: si substrate (1), SiO₂Insulating layer (2), C₆₀a/CuPc bilayer film (3), MoO₂(4) Gold interdigital electrodes (5).

2. A C-based alloy according to claim 1₆₀NO of/CuPc heterojunction₂The preparation method of the gas sensor is characterized by comprising the following steps: vacuum co-evaporation method is adopted for evaporation C₆₀the/CuPc bilayer film (3) is used as a sensitive layer of the gas sensor, forms a heterojunction on the molecular level, increases the carrier concentration at the interface, and simultaneously improves NO₂Gas molecules (8) and C₆₀The contact surface area of the/CuPc bilayer film (3) is increased, thereby improving the NO of the sensor₂The sensitivity of the gas.

3. A C-based alloy according to claim 1₆₀NO of/CuPc heterojunction₂The preparation method of the gas sensor is characterized by comprising the following steps: c₆₀The evaporation process of the/CuPc bilayer film (3) is carried out in vacuum of 6.0 multiplied by 10^-4The evaporation rate is 0.1 nm/min under the condition of Pa, the substrate temperature is 180 ℃, and the thickness is 20 nm.

4. A C-based alloy according to claim 1₆₀NO of/CuPc heterojunction₂The preparation method of the gas sensor is characterized by comprising the following steps: firstly evaporating MoO by adopting a masking method₂(4) The material is used as an electrode modification layer, then a gold metal material is evaporated to be used as a gold interdigital electrode (5), the thickness is 50 nm, and the specification of a mask plate is as follows: the width is 10 mm and the length is 0.5 mm.