CN110998871A - 一种微器件及其制备方法 - Google Patents

一种微器件及其制备方法 Download PDF

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Publication number
CN110998871A
CN110998871A CN201980002740.XA CN201980002740A CN110998871A CN 110998871 A CN110998871 A CN 110998871A CN 201980002740 A CN201980002740 A CN 201980002740A CN 110998871 A CN110998871 A CN 110998871A
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CN
China
Prior art keywords
layer
semiconductor layer
light
micro
outer side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980002740.XA
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English (en)
Chinese (zh)
Inventor
伍凯义
钟光韦
杨然翔
江仁杰
沈佳辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Original Assignee
Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Filing date
Publication date
Application filed by Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd filed Critical Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Publication of CN110998871A publication Critical patent/CN110998871A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
CN201980002740.XA 2019-11-21 2019-11-21 一种微器件及其制备方法 Pending CN110998871A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/119811 WO2021097736A1 (fr) 2019-11-21 2019-11-21 Microdispositif et son procédé de fabrication

Publications (1)

Publication Number Publication Date
CN110998871A true CN110998871A (zh) 2020-04-10

Family

ID=70080514

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980002740.XA Pending CN110998871A (zh) 2019-11-21 2019-11-21 一种微器件及其制备方法

Country Status (2)

Country Link
CN (1) CN110998871A (fr)
WO (1) WO2021097736A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112991966A (zh) * 2020-04-26 2021-06-18 重庆康佳光电技术研究院有限公司 一种显示背板、显示装置和显示背板制作方法
WO2023108451A1 (fr) * 2021-12-15 2023-06-22 厦门市芯颖显示科技有限公司 Dispositif électroluminescent et appareil de transfert

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106782128A (zh) * 2017-01-24 2017-05-31 深圳市华星光电技术有限公司 微发光二极管显示面板及其制造方法
US20170345867A1 (en) * 2015-01-23 2017-11-30 Vuereal Inc. Micro device integration into system substrate
CN107706275A (zh) * 2017-09-29 2018-02-16 华灿光电（浙江）有限公司 一种发光二极管芯片、面板及其制作方法
CN109935599A (zh) * 2019-03-29 2019-06-25 上海天马微电子有限公司 显示面板、显示装置和显示面板的制作方法
CN110265522A (zh) * 2019-06-28 2019-09-20 上海天马微电子有限公司 显示面板、显示装置和显示面板的制造方法
CN110289254A (zh) * 2019-06-27 2019-09-27 京东方科技集团股份有限公司 微型发光二极管及其制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170345867A1 (en) * 2015-01-23 2017-11-30 Vuereal Inc. Micro device integration into system substrate
CN106782128A (zh) * 2017-01-24 2017-05-31 深圳市华星光电技术有限公司 微发光二极管显示面板及其制造方法
CN107706275A (zh) * 2017-09-29 2018-02-16 华灿光电（浙江）有限公司 一种发光二极管芯片、面板及其制作方法
CN109935599A (zh) * 2019-03-29 2019-06-25 上海天马微电子有限公司 显示面板、显示装置和显示面板的制作方法
CN110289254A (zh) * 2019-06-27 2019-09-27 京东方科技集团股份有限公司 微型发光二极管及其制备方法
CN110265522A (zh) * 2019-06-28 2019-09-20 上海天马微电子有限公司 显示面板、显示装置和显示面板的制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112991966A (zh) * 2020-04-26 2021-06-18 重庆康佳光电技术研究院有限公司 一种显示背板、显示装置和显示背板制作方法
WO2023108451A1 (fr) * 2021-12-15 2023-06-22 厦门市芯颖显示科技有限公司 Dispositif électroluminescent et appareil de transfert

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Publication number Publication date
WO2021097736A1 (fr) 2021-05-27

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Application publication date: 20200410