CN110995189A - 格型结构滤波器及其制备方法 - Google Patents

格型结构滤波器及其制备方法 Download PDF

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CN110995189A
CN110995189A CN201911030650.XA CN201911030650A CN110995189A CN 110995189 A CN110995189 A CN 110995189A CN 201911030650 A CN201911030650 A CN 201911030650A CN 110995189 A CN110995189 A CN 110995189A
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resonator
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孙成亮
周杰
刘婕妤
邹杨
蔡耀
刘炎
高超
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Wuhan Memsonics Technologies Co Ltd
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Wuhan University WHU
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02023—Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
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    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0407—Temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H2009/02165—Tuning
    • H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]

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Abstract

本发明提供了一种谐振器及其制备方法，能够有效抑制格型结构滤波器存在的非谐振区域谐振问题，并提升滤波器的品质和性能。本发明提供的格型结构滤波器，包括至少两个串联谐振器和多个并联谐振器，其特征在于：在上下谐振器的重叠区域中，一个谐振器的上电极与另一个谐振器的下电极之间，为非压电且非导体材料形成的填充层。本发明提供的制备方法其特征在于：在沉积完压电材料之后，对压电材料的局部区域先进行刻蚀；局部区域指搭建滤波器时不同谐振器上下电极相重叠、其间包含压电材料的区域。

Description

格型结构滤波器及其制备方法
技术领域
本发明属于带通滤波器领域，具体涉及格型结构滤波器及其制备方法。
背景技术
5G的飞速发展对通讯领域提出了更高的要求：薄膜体声波谐振器(Film BulkAcoustic Resonator)由于具有高性能，小尺寸，低成本和COMS兼容等特性，基于此构建的带通滤波器(Film Bulk Acoustic Filter)可以实现更低的插入损耗(Insertion Loss)，更高的带外抑制特性，更好的选择比，更高的功率容量等特点。
现有技术中通用滤波器搭建方法主要有两种：梯型(Ladder)结构和格型(Lattice)结构。如图1(a)所示，梯型结构是由多个滤波器级联而成，分为串联谐振器1和并联谐振器2；如图1(b)所示，格型结构的并联谐振器3 相互重叠连在串联谐振器4的两端。如图2(a)和(b)所示，通过S21曲线可以明显看出，相比于梯型结构滤波器(带外抑制在-30dB以下)，格型结构具有更好的带外抑制效果(-50dB以下)，因此该结构也被全球各研究机构广泛地研究。
对于格型结构滤波器来说，其工艺版图如图3所示。当串联谐振器4 的数量大于等于2的时候，格型结构滤波器的电路版图必然出现上电极5 和下电极6重叠的现象。如图3所示，在电极重叠区域7，由于上下电极之间存在压电材料，这就构成了一个谐振器区域。当在滤波器的两个测试端口8施加交流电压时，不仅谐振器工作，在重叠区域7也会产生与谐振器原理相同的振动，这就必然会严重影响滤波器在高频状态下的工作性能，具体表现在S21曲线的带内损耗增加，带内纹波增多，带外抑制降低等，严重降低滤波器的品质。
针对相关技术中格型滤波器(串联谐振器的数量大于等于2)的电路版图中由于电极重叠产生额外的谐振区域导致滤波器品质严重降低的问题，目前尚未提出有效的解决方案。
发明内容
本发明是为了解决上述问题而进行的，目的在于提供一种格型结构滤波器及其制备方法，可以解决Lattice结构带通滤波器谐振区域电极重叠问题，消除由于上下电极重叠产生的不必要谐振，有效提高滤波器的品质和性能。
本发明为了实现上述目的，采用了以下方案：
<格型结构滤波器>
本发明提供一种格型结构滤波器，包括至少两个串联谐振器和多个并联谐振器，其特征在于：在上下谐振器的重叠区域中，一个谐振器的上电极与另一个谐振器的下电极之间，为非压电且非导体材料形成的填充层。
优选地，本发明提供的格型结构滤波器还可以具有以下特征：填充层的材料为具有具有正温度系数的非压电且非导体材料。
优选地，本发明提供的格型结构滤波器还可以具有以下特征：填充层的材料为二氧化硅。
<制备方法>
进一步，本发明还提供制备上述格型结构滤波器的方法，其特征在于：在沉积完压电材料之后，对压电材料的局部区域先进行刻蚀；局部区域指搭建滤波器时不同谐振器上下电极相重叠、其间包含压电材料的区域。
具体地，本发明提供的格型结构滤波器的制备方法，包括如下步骤：步骤1.在硅衬底上刻蚀空腔并填充二氧化硅；步骤2.沉积下电极并图案化；步骤3.沉积压电材料，然后对位于谐振器上下电极重叠区域的沉积压电材料进行刻蚀，形成通孔，再填充非压电且非导电的材料；步骤4.刻蚀引出孔，并沉积上电极。刻蚀方法可以为干法刻蚀和湿法刻蚀等物理、化学方法。
发明的作用与效果
本发明提供的格型结构滤波器及其制备方法，通过将上下电极重叠区域的压电材料刻蚀并填充非导体材料，有效抑制了格型结构滤波器存在的非谐振区域谐振问题，提升了滤波器的品质和性能。进一步，刻蚀电极重叠区域压电材料层并填充具有正温度系数的非导体材料，不仅能抑制非谐振区域的振动，还可以适当对滤波器进行温度补偿，更进一步提高滤波器品质和性能。
附图说明
图1为背景技术中涉及的梯型(a)和格型(b)结构滤波器的电路结构及响应曲线S21图；
图2为背景技术中涉及的梯型(a)和格型(b)结构滤波器的响应曲线S21图；
图3为背景技术中涉及的串联支路谐振器数量大于或等于2时的格型滤波器电路结构示意图；
图4为现有技术中滤波器的制备工艺流程示意图；
图5为本发明实施例中涉及的格型结构滤波器制备工艺流程示意图。
具体实施方式
以下结合附图对本发明涉及的格型结构滤波器及其制备方法的具体实施方案进行详细地说明。
为更加清楚地说明本方案与现有技术的区别，现对现有技术的制备方法进行说明。如图4所示，为现有技术中制备谐振器9的工艺流程图，在硅衬底9a上先刻蚀空腔9b并填充二氧化硅9c，进而沉积下电极9d并图案化；进一步，沉积压电材料9e并刻蚀引出孔9f，最后沉积上电极9g，谐振器1制备完成。
<实施例>
如图4所示，以格型结构滤波器10中相互串联的两个谐振器为例介绍本实施例所提供的制备方法，图5中左右两侧分别为谐振器A和谐振器B。
具体地，本实施例所提供的格型结构滤波器10的制备方法包括：
步骤1.在硅衬底11上刻蚀空腔11a并填充二氧化硅12；
步骤2.沉积下电极13并图案化；
步骤3.沉积压电材料14，然后对位于谐振器上下电极重叠区域的沉积压电材料13进行刻蚀，形成通孔15，再填充非压电且非导电的材料16。
本步骤中，与传统工艺流程不同的是，在刻蚀引出孔之前，先在谐振器上下电极重叠区域刻蚀通孔15，并填充非导体材料16。重叠区域指搭建滤波器时不同谐振器上下电极相重叠、其间包含压电材料的区域。
通孔15刻蚀了上下电极重叠区域之间的压电材料13，填充的非导体材料16如果具有正温漂系数，例如二氧化硅，还可以对器件整体进行温度补偿。通过这样的方式，不仅能抑制非谐振区域的电场和振动，具有正压电系数的材料16还能对滤波器进行温度补偿，进一步提升格型结构滤波器10 的性能。
步骤4.刻蚀引出孔17，并沉积上电极18。
步骤5.基于以上步骤1至4制备其余谐振器，进而得到格型结构滤波器10。
以上实施例仅仅是对本发明技术方案所做的举例说明。本发明所涉及的格型结构滤波器及其制备方法并不仅仅限定于在以上实施例中所描述的内容，而是以权利要求所限定的范围为准。本发明所属领域技术人员在该实施例的基础上所做的任何修改或补充或等效替换，都在本发明的权利要求所要求保护的范围内。

Claims (5)

1.一种格型结构滤波器，包括至少两个串联谐振器和多个并联谐振器，其特征在于：
在上下谐振器的重叠区域中，一个所述谐振器的上电极与另一个所述谐振器的下电极之间，为非压电且非导体材料形成的填充层。
2.根据权利要求1所述的格型结构滤波器，其特征在于：
其中，所述填充层的材料为具有具有正温度系数的非压电且非导体材料。
3.根据权利要求1所述的格型结构滤波器，其特征在于：
其中，所述填充层的材料为二氧化硅。
4.权利要求1至3中任意一项所述的格型结构滤波器的制备方法，其特征在于：
其中，在沉积完压电材料之后，对压电材料的局部区域先进行刻蚀；
所述局部区域指搭建滤波器时不同谐振器上下电极相重叠、其间包含压电材料的区域。
5.根据权利要求4所述的格型结构滤波器的制备方法，其特征在于，包括如下步骤：
步骤1.在硅衬底上刻蚀空腔并填充二氧化硅；
步骤2.沉积下电极并图案化；
步骤3.沉积压电材料，然后对位于谐振器上下电极重叠区域的沉积压电材料进行刻蚀，形成通孔，再填充非压电且非导电的材料；
步骤4.刻蚀引出孔，并沉积上电极。
CN201911030650.XA 2019-10-28 2019-10-28 格型结构滤波器及其制备方法 Pending CN110995189A (zh)

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CN111786647A (zh) * 2020-08-07 2020-10-16 展讯通信（上海）有限公司 晶圆级声表面波滤波器与封装方法

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