CN110993147A - Preparation method of silver nanowire transparent conductive film - Google Patents
Preparation method of silver nanowire transparent conductive film Download PDFInfo
- Publication number
- CN110993147A CN110993147A CN201911248449.9A CN201911248449A CN110993147A CN 110993147 A CN110993147 A CN 110993147A CN 201911248449 A CN201911248449 A CN 201911248449A CN 110993147 A CN110993147 A CN 110993147A
- Authority
- CN
- China
- Prior art keywords
- transparent conductive
- conductive film
- film
- silver nanowire
- length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
The invention discloses a preparation method of a silver nanowire transparent conductive film, which comprises the following steps: a. pumping and filtering the silver nanowires with different length-diameter ratios to a cellulose membrane; b. sticking the cellulose membrane on a transparent film and dissolving the cellulose membrane; and performing suction filtration for many times according to the length-diameter ratio of the silver nanowires and dissolving a cellulose membrane on the transparent conductive film to finally obtain the transparent conductive film only containing the silver nanowires with different length-diameter ratios, so that the electrode sheet resistance of the transparent conductive film is reduced, the conductivity is improved, and the film also has good transmittance.
Description
Technical Field
The invention relates to a transparent conductive film, in particular to a preparation method of a silver nanowire transparent conductive film.
Background
Because ITO has fragility, rare metal indium resources are limited, the manufacturing process is complex, the cost is high, and the application development of ITO in flexible equipment is greatly limited. Metallic silver has good thermal and electrical conductivity, and the nanowire network has a certain transmittance to light, which makes silver nanowires (AgNW) considered as a good substitute material for ITO films. Therefore, the new generation of silver nanowire flexible transparent conductive film has good transparency and conductivity, and is widely applied to photoelectric and flexible display devices, such as foldable mobile phones, smart homes, wearable equipment and the like. Currently, silver nanowires are randomly distributed on a flexible film by spraying, spin coating, screen printing, blade coating, ink jet printing, and the like. The spin coating method is a common method for preparing a film layer with a smaller size (<100mm) by liquid phase evaporation in a laboratory, and the basic process and principle are that coating liquid drops are dripped on the surface of a substrate rotating at a high speed, and the coating liquid drops are flattened under the action of centrifugal force to form a film. The spin coating film forming process is simple and easy to implement, can prepare extremely thin film layers, and is a common film forming means in laboratories. The nonuniformity of the film layer formed by spin coating comes from: 1) the solvent is volatilized in the process that the coating liquid is spread outwards, and the viscosity is gradually increased along the radial direction, so that the thickness of the coating layer is larger as the coating liquid is farther away from the rotating center; 2) the film layer has a radial pattern orientation along the radial direction. Even so, the spin coating film formation on the small-sized substrate still has better uniformity. However, spin coating is difficult to produce uniform films on large substrates and continuous production is not easy to achieve, and thus, the method lacks industrial potential. The spray coating method is a film-forming method in which a spray liquid is atomized and sprayed as mist droplets onto a substrate by utilizing the interaction between an air flow and the spray liquid. In essence, the liquid film prepared by the spray coating method is formed by randomly occupying and stacking liquid drops deposited on the surface of a substrate, the uniformity of the liquid film depends on the probability uniformity of drop point positions of the liquid drops and the thickness uniformity of the interior of a liquid cake after the liquid drops are spread, and the uniformity of a spray coating film is generally considered to be inferior to that of a spin coating film layer. And the simple spraying device is difficult to achieve the theoretical film forming uniformity, the moving speed of the spray head and the flow of the spraying liquid need to be accurately controlled to realize large-area uniform film forming, and the equipment cost is higher. But the spraying method is easy to realize large-area film formation, is not limited by the shape of the surface of the substrate, and cannot damage the former film layer in the film formation process. By increasing the pressure of the loading gas, softening the surface tension of the spraying liquid and slowing down the drying speed, the thin film can be prepared by spraying. The greatest advantage of the spraying method is that the electrostatic spraying method which is easy for industrial continuous production is a novel spraying method, uses a static electric field for atomizing and accelerating the spraying of liquid, and has better film forming uniformity, higher material utilization rate and higher equipment cost. The bar coating method uses a wire rod (also called meyer rod) as a coating tool to spread a coating liquid on a substrate, and wire rods of different types have different winding diameters, one type corresponding to one coating film thickness. The bar coating method has the advantages that: the process is simple and easy to implement, and the thickness of the film can be changed by using different types of silk rods for the same solution; the loss rate of the solution is small (generally less than 5%); can prepare large-size devices and can be continuously produced. Unlike spin coating and spray coating, bar coating is more suitable for coating liquids with higher viscosity. The main defects of preparing the film layer by the rod coating method are that the thickness of the film layer is difficult to accurately control, and the relationship between the thickness of the film layer and the diameter of a winding wire is mostly determined by experience; in addition, the wet film thickness is too large, and only wet films having a thickness of 2 μm or more can be produced even with a squeeze type wire rod newly developed by OSP corporation of japan. In addition, because the coating liquid is flattened along the advancing direction of the wire rod, the film layer prepared by a single coating has orientation, and although the orientation of the film layer can be eliminated by a method of vertically and horizontally alternate coating, the process is difficult to realize for a continuous film-forming product. Generally, the rod coating method is more suitable for occasions with low requirement on the thickness precision of the film layer. In conclusion, the silver nanowires are randomly distributed on the transparent film, so that the non-uniform distribution of the silver nanowires can cause the non-uniform distribution of the conductivity of the transparent conductive film, the overall performance of the silver nanowire transparent conductive film is reduced, and the silver nanowires are limited from successfully replacing ITO. In order to improve the overall conductive quality of the silver nanowire transparent conductive film in the prior art, the adopted method often reduces the transparency of the film, and leads to unsatisfactory transmittance of the film.
Disclosure of Invention
In view of the above, the present invention is directed to a method for preparing a silver nanowire transparent conductive film, which improves the overall conductive quality of the silver nanowire transparent conductive film without reducing the transparency of the film.
The preparation method of the silver nanowire transparent conductive film comprises the following steps:
a. pumping and filtering the silver nanowires with different length-diameter ratios to a cellulose membrane;
b. sticking the cellulose membrane on a transparent film and dissolving the cellulose membrane;
further, in the step a, performing suction filtration for multiple times according to the length-diameter ratio of the silver nanowires;
further, in the step a, the silver nanowires with high length-diameter ratio are filtered to the cellulose membrane, and then the silver nanowires with low length-diameter ratio are filtered to the same cellulose membrane;
further, the length ratio of the silver nanowire with high length-diameter ratio to the silver nanowire with low length-diameter ratio is 4-14: 1;
further, the length of the silver nanowire with the high length-diameter ratio is 40-70 μm;
further, the length of the silver nanowire with the low length-diameter ratio is 5-10 μm;
further, step b, a step of hot pressing after the cellulose membrane is stuck on the transparent film is also included;
further, dissolving the cellulose membrane by using an acetone solution;
further, the temperature of the acetone solution is 40-60 ℃;
further, the heating temperature of the hot-pressing treatment is 140-160 ℃, and the heating time is 1-10 min.
The invention has the beneficial effects that: according to the preparation method of the silver nanowire transparent conductive film, multiple suction filtration is carried out according to the length-diameter ratio of the silver nanowires, and the cellulose film on the transparent conductive film is dissolved, so that the transparent conductive film only containing the silver nanowires with different length-diameter ratios is finally obtained, the electrode sheet resistance of the transparent conductive film is reduced, the conductivity is improved, and the film also has good transmittance. The method is simple and easy to implement and can be generated in batches.
Detailed Description
The preparation method of the silver nanowire transparent conductive film comprises the following steps:
a. pumping and filtering the silver nanowires with different length-diameter ratios to a cellulose membrane; the same cellulose membrane is sequentially filtered according to different length-diameter ratios, so that the lapping among the silver nanowires is promoted, and the silver nanowires can be uniformly distributed on the cellulose membrane through the filtering; the silver nanowires and the cellulose membrane are prepared by the existing method, and are not described again for the prior art; in addition, in the prior art, the silver nanowires are point-contacted and have large contact resistance due to the fact that the silver nanowires are randomly distributed on the flexible thin film by adopting methods such as spraying, spin coating, screen printing, blade coating and ink-jet printing, random grids are formed on the thin film, and the sheet resistance of the film layer is high;
b. sticking the cellulose membrane on a transparent film and dissolving the cellulose membrane; in the dissolving process of the cellulose membrane, the adhesive force between the silver nanowires and the transparent film can be promoted, and after the cellulose membrane is dissolved, the transparent conductive film only contains the silver nanowires, so that the transparency of the transparent conductive film is ensured, and the transmittance of the transparent conductive film is further ensured.
In this embodiment, in step a, multiple suction filtration is performed according to the length-diameter ratio of the silver nanowire; the silver nanowires can be uniformly distributed through multiple times of suction filtration, however, the times of suction filtration need to consider not only the lapping strength among the silver nanowires with different length-diameter ratios and the connection strength among grids formed by the silver nanowires with different length-diameter ratios, but also the square resistance increase caused by too large contact points of the silver nanowires, so that the times of suction filtration and the sequence of suction filtration of the silver nanowires have great influence on the performance of the conductive transparent film.
In this embodiment, in step a, the silver nanowires with a high aspect ratio are first suction filtered to the cellulose film, and then the silver nanowires with a low aspect ratio are suction filtered to the same cellulose film; firstly, the silver nanowires with high length-diameter ratio are uniformly pumped and filtered to a cellulose membrane, then the silver nanowires with low length-diameter ratio are pumped and filtered, the lapping among the silver nanowires with high length-diameter ratio is promoted by utilizing the silver nanowires with low length-diameter ratio, can improve the distribution uniformity of the silver nanowires, and the silver nanowires with low length-diameter ratio are not easy to fall off, when the cellulose film on the transparent conductive film is dissolved away, the contact surface between the silver nanowires with high length-diameter ratio and the conductive transparent film is the largest, the adhesive force is stronger, and adopt high slenderness ratio silver nano wire and low slenderness ratio silver nano wire to mix and take, low slenderness ratio silver nano wire not only plays the overlap joint effect with high slenderness ratio silver nano wire in the space, has promoted the grid intensity of silver nano wire on the transparent conductive film again, has not only improved adhesive strength, has still reduced contact resistance, and then has improved transparent conductive film's square resistance, and then has improved electric conductivity. In the present invention, "high aspect ratio" and "low aspect ratio" in the silver nanowires of high aspect ratio and low aspect ratio are high and low in the relative concept, and "high" and "low" do not represent specific values but relative values. That is to say, if the silver nanowires have two aspect ratios, the silver nanowires with the large aspect ratio are filtered on the cellulose membrane, and then the silver nanowires with the small aspect ratio are filtered, so that the silver nanowires not only have certain uniformity and certain directionality on the membrane layer, but also have lower sheet resistance compared with the existing silver nanowires randomly distributed in the membrane layer formed by the method of the embodiment.
In this embodiment, the length ratio of the silver nanowire with the high aspect ratio to the silver nanowire with the low aspect ratio is 4 to 14: 1; the appropriate aspect ratio fits while ensuring conductivity and transmittance of the transparent film.
In the embodiment, the length of the silver nanowire with the high aspect ratio is 40-70 μm; the length of the silver nanowire with the low length-diameter ratio is 5-10 mu m; is a preferred embodiment.
In this embodiment, step b further includes a step of performing a hot pressing process after the cellulose film is attached to the transparent film; in order to improve the adhesion between the cellulose film and the transparent film and finally achieve the purpose of improving the adhesion between the silver nanowires and the transparent film, hot-pressing treatment is required.
In this example, an acetone solution was used to dissolve the cellulose membrane; pasting a cellulose membrane containing silver nanowires on a transparent film, and putting the transparent film on an acetone solution to dissolve the cellulose membrane, wherein the temperature of the acetone solution is 40-60 ℃.
In this embodiment, the heating temperature of the hot pressing treatment is 140-; fusion welding is carried out on lap points between the AgNWs, metallurgical bonding of contact points is realized, and contact resistance is reduced; the sheet resistance of the film layer can be reduced by 2-3 orders of magnitude after the heating treatment. The pressurization treatment can also play a role in reducing the sheet resistance; before the pressurization treatment, the surface of the conductive film layer was not flat, and the lap joint of the silver nanowire AgNW was thicker due to the overlapping of two agnws. The uniform pressure of several to dozens of MPa is applied to the surface of the film layer, the thickness of the lap joint is large, so that the film layer is firstly extruded, the two overlapped AgNWs are extruded and deformed to increase the contact area, when the pressure is large enough, the AgNWs can even flatten the bulges at the lap joint to be mutually embedded to form a plane, the contact area is further increased, the physical combination between the AgNWs is realized, the contact resistance is obviously reduced, and the hot pressing treatment of heating and pressing combination also has the function of enhancing the adhesion.
Example one
Pumping and filtering 20 mu l of silver nanowires with a high length-diameter ratio of 40 mu m to a cellulose membrane with a diameter of 5cm, pumping and filtering 3 mu l of silver nanowires with a low length-diameter ratio of 5 mu m to the cellulose membrane, then pasting the cellulose membrane containing the silver nanowires on a transparent film, then placing the transparent film on a high-temperature platform at 150 ℃ for heating for 5 minutes, taking off the heated film for hot pressing, and finally placing the film on an acetone solution at 50 ℃ for dissolving the cellulose membrane to obtain the silver nanowire transparent conductive film.
Example two
Pumping and filtering 20 mu l of silver nanowires with a high length-diameter ratio of 70 mu m to a cellulose membrane with a diameter of 5cm, pumping and filtering 3 mu l of silver nanowires with a low length-diameter ratio of 10 mu m to the cellulose membrane, then pasting the cellulose membrane containing the silver nanowires on a transparent film, heating the transparent film on a high-temperature platform at 140 ℃ for 5 minutes, taking off the heated film for hot pressing, and finally putting the film on an acetone solution at 40 ℃ to dissolve the cellulose membrane to obtain the silver nanowire transparent conductive film.
EXAMPLE III
Pumping and filtering 25 mu l of silver nanowires with a high length-diameter ratio of 70 mu m to a cellulose membrane with a diameter of 5cm, pumping and filtering 8 mu l of silver nanowires with a low length-diameter ratio of 10 mu m to the cellulose membrane, then pasting the cellulose membrane containing the silver nanowires on a transparent film, heating the transparent film on a high-temperature platform at 160 ℃ for 5 minutes, taking off the heated film for hot pressing, and finally putting the film on an acetone solution at 60 ℃ to dissolve the cellulose membrane to obtain the silver nanowire transparent conductive film.
Example four
Pumping and filtering 18 mu l of silver nanowires with a high length-diameter ratio of 50 mu m to a cellulose membrane with a diameter of 5cm, pumping and filtering 1 mu l of silver nanowires with a low length-diameter ratio of 8 mu m to the cellulose membrane, then pasting the cellulose membrane containing the silver nanowires on a transparent film, then placing the transparent film on a high-temperature platform at 155 ℃ for heating for 6 minutes, taking off the heated film for hot pressing, and finally placing the film on an acetone solution at 55 ℃ for dissolving the cellulose membrane to obtain the silver nanowire transparent conductive film.
EXAMPLE five
And (2) carrying out suction filtration on 20 mu l of silver nanowire with a high length-diameter ratio of 60 mu m to a cellulose membrane with a diameter of 5cm, then carrying out suction filtration on 3 mu l of silver nanowire with a low length-diameter ratio of 6 mu m to the cellulose membrane, then pasting the cellulose membrane containing the silver nanowire on a transparent film, then placing the transparent film on a high-temperature platform at 145 ℃ for heating for 4 minutes, taking off the heated film for hot pressing, and finally placing the film on an acetone solution at 58 ℃ for dissolving the cellulose membrane to obtain the silver nanowire transparent conductive film.
EXAMPLE six
Pumping and filtering 23 mu l of silver nanowires with a high length-diameter ratio of 65 mu m to a cellulose membrane with a diameter of 5cm, pumping and filtering 6 mu l of silver nanowires with a low length-diameter ratio of 6 mu m to the cellulose membrane, then pasting the cellulose membrane containing the silver nanowires on a transparent film, then placing the transparent film on a high-temperature platform at 150 ℃ for heating for 7 minutes, taking off the heated film for hot pressing, and finally placing the film on an acetone solution at 50 ℃ for dissolving the cellulose membrane to obtain the silver nanowire transparent conductive film.
The properties of the silver nanowire transparent conductive film prepared in the above example are as follows:
finally, the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all of them should be covered in the claims of the present invention.
Claims (10)
1. A preparation method of a silver nanowire transparent conductive film is characterized by comprising the following steps: the method comprises the following steps:
a. pumping and filtering the silver nanowires with different length-diameter ratios to a cellulose membrane;
b. the cellulose membrane is dissolved after being stuck on a transparent film.
2. The method for preparing a silver nanowire transparent conductive film according to claim 1, characterized in that: and in the step a, performing suction filtration for many times according to the length-diameter ratio of the silver nanowires.
3. The method for preparing a silver nanowire transparent conductive film according to claim 2, characterized in that: in the step a, the silver nanowires with high length-diameter ratio are filtered to the cellulose membrane, and then the silver nanowires with low length-diameter ratio are filtered to the same cellulose membrane.
4. The method for preparing a silver nanowire transparent conductive film according to claim 3, characterized in that: the length ratio of the silver nanowire with the high length-diameter ratio to the silver nanowire with the low length-diameter ratio is 4-14: 1.
5. the method for preparing a silver nanowire transparent conductive film according to claim 4, characterized in that: the length of the silver nanowire with the high length-diameter ratio is 40-70 mu m.
6. The method for preparing a silver nanowire transparent conductive film according to claim 4, characterized in that: the length of the silver nanowire with the low length-diameter ratio is 5-10 mu m.
7. The method for preparing a silver nanowire transparent conductive film according to claim 1, characterized in that: and step b, further comprising the step of carrying out hot pressing treatment after the cellulose membrane is attached to the transparent thin film.
8. The method for preparing a silver nanowire transparent conductive film according to claim 7, characterized in that: the cellulose membrane was dissolved with an acetone solution.
9. The method for preparing a silver nanowire transparent conductive film according to claim 8, characterized in that: the temperature of the acetone solution is 40-60 ℃.
10. The method for preparing a silver nanowire transparent conductive film according to claim 7, characterized in that: the heating temperature of the hot-pressing treatment is 140-160 ℃, and the heating time is 1-10 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911248449.9A CN110993147A (en) | 2019-12-09 | 2019-12-09 | Preparation method of silver nanowire transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911248449.9A CN110993147A (en) | 2019-12-09 | 2019-12-09 | Preparation method of silver nanowire transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110993147A true CN110993147A (en) | 2020-04-10 |
Family
ID=70091135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911248449.9A Pending CN110993147A (en) | 2019-12-09 | 2019-12-09 | Preparation method of silver nanowire transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110993147A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023065666A1 (en) * | 2021-10-18 | 2023-04-27 | 国防科技大学 | Preparation method for nanowire silver film for packaging and interconnection of large-size power semiconductor integrated circuit |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110071534A (en) * | 2009-12-21 | 2011-06-29 | (주)켐스 | Transparent conductors and method of preparing same |
| CN104766646A (en) * | 2015-03-04 | 2015-07-08 | 江苏大学 | High-bending-resistance transparent conducting film and making method thereof |
| CN107331432A (en) * | 2017-06-27 | 2017-11-07 | 深圳大学 | A kind of nano silver wire transparent conductive film and preparation method thereof |
| CN109509574A (en) * | 2018-12-06 | 2019-03-22 | 电子科技大学中山学院 | Preparation method of high-uniformity nano-silver wire flexible transparent conductive electrode |
| CN109576990A (en) * | 2018-11-19 | 2019-04-05 | 南通纺织丝绸产业技术研究院 | A kind of silk electrode material and preparation method thereof based on silver nanowires conductive network |
| CN109727706A (en) * | 2019-03-08 | 2019-05-07 | 华南协同创新研究院 | A kind of flexible transparent conductive film and preparation method thereof |
| CN110473670A (en) * | 2019-07-09 | 2019-11-19 | 广东工业大学 | A kind of manufacturing method of nano conductive film |
-
2019
- 2019-12-09 CN CN201911248449.9A patent/CN110993147A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110071534A (en) * | 2009-12-21 | 2011-06-29 | (주)켐스 | Transparent conductors and method of preparing same |
| CN104766646A (en) * | 2015-03-04 | 2015-07-08 | 江苏大学 | High-bending-resistance transparent conducting film and making method thereof |
| CN107331432A (en) * | 2017-06-27 | 2017-11-07 | 深圳大学 | A kind of nano silver wire transparent conductive film and preparation method thereof |
| CN109576990A (en) * | 2018-11-19 | 2019-04-05 | 南通纺织丝绸产业技术研究院 | A kind of silk electrode material and preparation method thereof based on silver nanowires conductive network |
| CN109509574A (en) * | 2018-12-06 | 2019-03-22 | 电子科技大学中山学院 | Preparation method of high-uniformity nano-silver wire flexible transparent conductive electrode |
| CN109727706A (en) * | 2019-03-08 | 2019-05-07 | 华南协同创新研究院 | A kind of flexible transparent conductive film and preparation method thereof |
| CN110473670A (en) * | 2019-07-09 | 2019-11-19 | 广东工业大学 | A kind of manufacturing method of nano conductive film |
Non-Patent Citations (1)
| Title |
|---|
| 刘萍等: "纳米线透明导电薄膜的制备及在光电器件中的应用", 《材料导报A》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023065666A1 (en) * | 2021-10-18 | 2023-04-27 | 国防科技大学 | Preparation method for nanowire silver film for packaging and interconnection of large-size power semiconductor integrated circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9717144B2 (en) | Electroconductive nanowire network, and electroconductive substrate and transparent electrode using same, and method for manufacturing electroconductive nanowire network, electroconductive substrate, and transparent electrode | |
| JP6291587B2 (en) | Method for producing transparent conductive electrode containing dissolved metal nanowire | |
| TWI655090B (en) | Transparent electrode and method of manufacturing same | |
| JP2011090879A (en) | Method of manufacturing transparent conductor | |
| JP2011090878A (en) | Method of manufacturing transparent conductor | |
| SE514600C2 (en) | Method for manufacturing nanostructured thin film electrodes | |
| US9496062B2 (en) | Method of making merged junction in metal nanowires | |
| JP2010251292A (en) | Forming method of conductive film using conductive structure and conductive film | |
| CN106297967A (en) | Flexible conductive film and preparation method thereof, flexible touch screen and display floater | |
| CN103628028A (en) | Preparation method for transparent conductive metal network | |
| CN109559843A (en) | Transparent flexible electrode film, production method and transparent flexible electrode | |
| CN107481801B (en) | A kind of preparation method of silver nanowires grid transparent electrode | |
| CN110993147A (en) | Preparation method of silver nanowire transparent conductive film | |
| CN105694080A (en) | Surface treatment method for plastic material and mobile phone battery cover | |
| CN107910104B (en) | Conductive film and preparation method thereof | |
| CN106782748A (en) | A kind of method for making nano silver wire flexible transparent conductive film | |
| JPWO2017163832A1 (en) | Transparent conductive film, method for producing transparent conductive film, metal mold, and method for producing metal mold | |
| CN205334442U (en) | Flexible transparent conductive electrode structure of compound nanometer silver line | |
| CN105702319A (en) | Bending-resistant transparent copper sulfide conducting film and preparation method thereof | |
| CN114927285A (en) | Flexible transparent film electrode and preparation method thereof | |
| CN109402561A (en) | One kind electro-deposition WO on discontinuous conductive film3The method of film | |
| KR20100116398A (en) | Post treatment method of carbon nanotube film | |
| JP4103902B2 (en) | Method for manufacturing anisotropic conductive adhesive film | |
| CN111112862A (en) | Method for chemically welding silver nanowires | |
| CN104528694B (en) | A kind of Graphene doping transfer method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200410 |